JPH0661016A - Thick film thermistor composition and manufacture thereof as well as thick film thermistor using same and manufacture thereof - Google Patents
Thick film thermistor composition and manufacture thereof as well as thick film thermistor using same and manufacture thereofInfo
- Publication number
- JPH0661016A JPH0661016A JP4040029A JP4002992A JPH0661016A JP H0661016 A JPH0661016 A JP H0661016A JP 4040029 A JP4040029 A JP 4040029A JP 4002992 A JP4002992 A JP 4002992A JP H0661016 A JPH0661016 A JP H0661016A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- film thermistor
- thermistor
- composition
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、絶縁基板上の電極間に
サンドイッチ形に印刷形成される厚膜サーミスタ用の厚
膜サーミスタ組成物及びその製造方法、並びにこの組成
物を用いた厚膜サーミスタ及びその製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film thermistor composition for a thick film thermistor formed by sandwich printing between electrodes on an insulating substrate, a method for producing the same, and a thick film thermistor using the composition. And a manufacturing method thereof.
【0002】[0002]
【従来の技術】従来の厚膜サーミスタ組成物としては、
Mn、Co、Fe、Niなどのサーミスタ特性を有する
金属酸化物と導電材料としてのRuO2と更にガラス粉
末を混合したものが知られている。そしてこの組成物を
絶縁基板上に形成された第1の電極上の一部に重ね合わ
せて印刷し、更にこの上に第2の電極を重ね合わせて形
成したサンドイッチ形の厚膜サーミスタがある。As a conventional thick film thermistor composition,
It is known that a metal oxide such as Mn, Co, Fe, and Ni having thermistor characteristics, RuO 2 as a conductive material, and glass powder are further mixed. Then, there is a sandwich-type thick film thermistor in which this composition is superposed on a part of a first electrode formed on an insulating substrate and printed, and a second electrode is superposed on the composition.
【0003】このサンドイッチ形厚膜サーミスタは、同
一平面上の電極間にサーミスタ組成物を印刷したシート
状の厚膜サーミスタと比べて抵抗値を低くすることがで
きる。しかし、このサンドイッチ形の厚膜サーミスタで
も抵抗値は8kΩ程度が限度であり、それ以下の抵抗値
を出すには、第1の導電性物質としてのRuO2を更に
加えるか、あるいはMn、Co、Fe、Niなどのサー
ミスタ特性を有する金属酸化物に更に直接Cu又はCu
酸化物(以下、Cuと略す)を加えていた。This sandwich type thick film thermistor can have a lower resistance value than a sheet-like thick film thermistor in which the thermistor composition is printed between electrodes on the same plane. However, even in this sandwich type thick film thermistor, the resistance value is limited to about 8 kΩ, and in order to obtain a resistance value less than that, RuO 2 as the first conductive substance is further added, or Mn, Co, Further, Cu or Cu is directly added to a metal oxide having thermistor characteristics such as Fe and Ni.
An oxide (hereinafter abbreviated as Cu) was added.
【0004】従来のサーミスタ特性を有する金属酸化物
にCuを添加して酸化物とする方法では、Mn、Co、
Fe、Niがスピネル構造を形成するように1000℃
以上の温度で反応させる必要がある。そしてCuを添加
すると、Cuがスピネル構造に取込まれるものと、Cu
O又はCu2Oのいずれかの化合物を生成するものとが
存在する。このうちCu2Oは長時間放置するとCuO
に酸化するため、結晶構造及び導電率のそれぞれの変
化、又は、歪などに基因して、抵抗値変化を引き起こす
と考えられている。このことは、Cuを添加しないサー
ミスタ組成物の抵抗値変化率が125℃、1000時間
で+1%程度であるのに対し、Cuを添加したものは1
25℃、100時間で+10%〜+15%の変化を生じ
ることからも知られる。In the conventional method of adding Cu to a metal oxide having thermistor characteristics to form an oxide, Mn, Co,
1000 ℃ so that Fe and Ni form a spinel structure
It is necessary to react at the above temperature. When Cu is added, Cu is incorporated into the spinel structure and Cu
Some produce compounds of either O or Cu 2 O. Of these, Cu 2 O is CuO if left for a long time.
Therefore, it is considered that the resistance value changes due to the respective changes of the crystal structure and the conductivity, or the strain. This means that the resistance change rate of the thermistor composition to which Cu is not added is about + 1% at 125 ° C. for 1000 hours, whereas that of Cu is 1
It is also known that a change of + 10% to + 15% occurs at 25 ° C for 100 hours.
【0005】そこで、この問題を解決するため、Cuを
添加する場合、1000℃以下の温度に抑えることが考
えられる。しかし、従来のサーミスタ組成物をプレス成
形したのち、焼成し焼結させるというディスクリートタ
イプでは、化学反応が生じないためスピネル構造が形成
されず、その結果サーミスタ特性が得られず、しかも焼
結しないため、機械的に脆いものになっていた。Therefore, in order to solve this problem, it is conceivable to suppress the temperature to 1000 ° C. or lower when Cu is added. However, in the discrete type in which a conventional thermistor composition is press-molded and then fired and sintered, a spinel structure is not formed because a chemical reaction does not occur, and as a result, thermistor characteristics are not obtained, and further, it is not sintered. , Was mechanically fragile.
【0006】[0006]
【発明が解決しようとする課題】又、RuO2は添加量
が全体の7wt%を超えると、抵抗値とB定数(抵抗値
変化率を知る定数で一般にはB=2000K〜5000
Kである。)とが急激に低下してしまい、サーミスタと
して使用不可能になってしまう。又、サーミスタ特性を
有する金属酸化物にCuを直接添加する方法は、抵抗値
を下げるにはよい方法であるが、このCuを添加した組
成は熱安定性に欠け、125℃、100時間で+10%
〜+15%の抵抗値変化を起こすという問題がある。When the added amount of RuO 2 exceeds 7 wt% of the whole, the resistance value and the B constant (a constant for knowing the rate of change of the resistance value, generally B = 2000K to 5000).
K. ) And abruptly drop, making it unusable as a thermistor. Further, the method of directly adding Cu to the metal oxide having the thermistor property is a good method for lowering the resistance value, but the composition to which Cu is added lacks thermal stability and is +10 at 100 ° C. for 125 hours at 125 ° C. %
There is a problem that the resistance value changes by up to + 15%.
【0007】本発明は上述の問題点に鑑み、添加された
Cuの耐熱変化を抑え、高いB定数を有しながらも抵抗
値を下げることができる厚膜サーミスタ組成物及びその
製造方法並びにこの組成物を用いた厚膜サーミスタ及び
その製造方法を提供するものである。In view of the above problems, the present invention is a thick film thermistor composition capable of suppressing the heat resistance change of added Cu and having a high B constant, while lowering the resistance value, a method for producing the same, and this composition. A thick film thermistor using a material and a method for manufacturing the same are provided.
【0008】[0008]
【課題を解決するための手段】本発明は、上述の課題を
解決することを目的としてなされてもので、上述の課題
を解決する一手段として以下の構成を備える。即ち、M
n、Co、Fe、Niのそれぞれの酸化物のうちから選
ばれたサーミスタ特性を有する少なくとも2種の金属酸
化物を混合し加熱焼成したものと、第1の導電性物質と
してのRuO2と、第2の導電性物質としてのCuとR
u、又はCuとRuの酸化物、水酸化物、炭酸塩のいず
れかの組み合わせのうちの少なくとも2種を混合し加熱
焼成した化合物と、ガラスとよりなる。Since the present invention has been made for the purpose of solving the above-mentioned problems, the following structure is provided as one means for solving the above-mentioned problems. That is, M
a mixture of at least two metal oxides having thermistor characteristics selected from the oxides of n, Co, Fe, and Ni, which are heated and baked; and RuO 2 as a first conductive material, Cu and R as second conductive materials
u, or a compound obtained by mixing and heating at least two kinds of any combination of oxides, hydroxides, and carbonates of Cu and Ru, and glass.
【0009】そして、これを厚膜サーミスタに適用す
る。Then, this is applied to a thick film thermistor.
【0010】[0010]
【作用】以上の構成において、サーミスタ特性を有する
少なくとも2種の金属酸化物を混合し加熱焼成したもの
と第1の導電材料としてのRuO2とガラスよりなる厚
膜サーミスタ材料に、更に第2の導電材料として、Cu
とRu、又はCuとRuの酸化物、水酸化物、炭酸塩の
いずれかの組み合わせのうちの少なくとも2種を混合し
加熱焼成した化合物を添加することにより、低抵抗でB
定数が高く、耐熱安定性を有する厚膜サーミスタ組成
物、及び厚膜サーミスタを提供することができる。In the above structure, a thick film thermistor material made of RuO 2 and glass as a first conductive material, which is obtained by mixing and heating at least two kinds of metal oxides having thermistor characteristics, and a second Cu as a conductive material
And Ru, or a combination of at least two of Cu and Ru oxides, hydroxides, and carbonates, which are mixed and heated and calcined, so that B with low resistance can be obtained.
A thick film thermistor composition having a high constant and heat resistance stability, and a thick film thermistor can be provided.
【0011】[0011]
【実施例】以下、図面を参照して本発明に係わる一実施
例を詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described in detail below with reference to the drawings.
【0012】[0012]
【第1実施例】Mn3O4、Co3O4、Fe3O4を
1:1:0.2のモル比で混合し、成形し、加熱焼成す
ることにより、固相反応させて得た金属酸化物粉末31
wt%と、第1の導電性物質としてのRuO2粉末4w
t%と、第2の導電性物質としてのCuOとRuO2と
を予め1:1のモル比で混合し、このCuOとRuO2
との混合粉末を磁性ルツボに入れて、900℃で1時間
加熱焼成して固相反応させて得た酸化物を粉砕機にかけ
て粉末にした。この粉末をX線回折により分析したとこ
ろ、CuRuO3なる化合物であることが同定された。
そして、この粉末を10wt%と、ホウケイ酸鉛ガラス
粉末55wt%とを秤量し、自動混合機又はボールミル
により混合して混合物とする。First Example Mn 3 O 4 , Co 3 O 4 , and Fe 3 O 4 were mixed at a molar ratio of 1: 1: 0.2, molded, and heated and baked to obtain a solid-phase reaction. Metal oxide powder 31
wt% and RuO 2 powder 4w as the first conductive substance
t% and CuO and RuO 2 as the second conductive material are mixed in advance in a molar ratio of 1: 1 to obtain CuO and RuO 2.
The mixed powder of and was placed in a magnetic crucible and heated and baked at 900 ° C. for 1 hour to cause a solid phase reaction. When this powder was analyzed by X-ray diffraction, it was identified as a compound called CuRuO 3 .
Then, 10 wt% of this powder and 55 wt% of lead borosilicate glass powder are weighed and mixed by an automatic mixer or a ball mill to form a mixture.
【0013】ここで、有機ビヒクルとして7wt%のエ
チルセルロースを含むブチルカルビトールを前記混合物
の26wt%となるように加え、3本ロール等で充分に
混合し厚膜サーミスタペーストを作製した。得られた厚
膜サーミスタペーストを用い、図1及び図2に示すよう
に、基板1上に対向面積0.25mm2となるように上
下に対向して形成される電極2,2間に加熱焼成後の厚
膜が40μmとなるようにサンドイッチ形に厚膜サーミ
スタ体3を印刷し850℃で10分間焼成し厚膜サーミ
スタを得た。Here, butyl carbitol containing 7% by weight of ethyl cellulose as an organic vehicle was added so as to be 26% by weight of the mixture, and sufficiently mixed with a three-roll or the like to prepare a thick film thermistor paste. Using the obtained thick film thermistor paste, as shown in FIG. 1 and FIG. 2, heating and baking is performed between electrodes 2 and 2 which are vertically opposed to each other so as to have an opposed area of 0.25 mm 2. The thick film thermistor body 3 was printed in a sandwich form so that the subsequent thick film had a thickness of 40 μm, and was baked at 850 ° C. for 10 minutes to obtain a thick film thermistor.
【0014】得られた厚膜サーミスタの抵抗値は109
8Ω、B定数3301Kであり、125℃で1000時
間加熱の抵抗値変化率は+2.08%で安定した特性で
あった。The resistance value of the obtained thick film thermistor is 109.
The resistance value change rate after heating at 125 ° C. for 1000 hours was + 2.08%, which was stable characteristics.
【0015】別表1に、本発明の厚膜サーミスタ試料1
〜6の抵抗値、B定数、125℃、1000時間での抵
抗値変化率を示す。(但し、試料1は125℃;100
時間での抵抗値変化率である。)Table 1 shows the thick film thermistor sample 1 of the present invention.
The resistance values of B to B, the B constant, the rate of change in the resistance value at 125 ° C. for 1000 hours are shown. (However, sample 1 is 125 ° C; 100
This is the rate of change in resistance over time. )
【0016】表1において各試料の抵抗値は25℃で膜
厚40μm、対向面積0.25mm2の値であり、B定
数は25℃での抵抗値を100℃の抵抗値で割ったもの
の自然対数に、それらの温度の逆数の差をとったもので
ある。In Table 1, the resistance value of each sample is a film thickness of 40 μm at 25 ° C. and a facing area of 0.25 mm 2 , and the B constant is the natural value of the resistance value at 25 ° C. divided by the resistance value at 100 ° C. It is the logarithm of the reciprocal of the temperature difference.
【0017】尚、以上の実施例では第2の導電性物質と
してのCu源及びRu源としてそれぞれCuOとRuO
2とを用いたが、最終的にCuとRuの酸化物となれ
ば、他のCu化合物とRu化合物の組み合わせでもよ
い。この表1より本発明の組成物を用いて形成した厚膜
サーミスタは、CuとRu、又はCuとRuの酸化物、
水酸化物、炭酸塩のいずれかの組み合わせのうちの少な
くとも2種を混合し加熱焼成した化合物を、サーミスタ
特性を有する金属酸化物と直接反応させず、別途添加す
ることにより、低抵抗で高いB定数を有し、更に125
℃の熱に対して抵抗値変化率が少なく安定である。この
ため、上述の厚膜サーミスタ組成物を用いて、厚膜サー
ミスタとして基板上に上下に対向して形成される電極間
にサンドイッチ形に厚膜サーミスタ体を印刷、焼成する
ことにより、低抵抗でB定数が高く、非常に耐熱安定性
が良好の厚膜サーミスタを得ることができる。In the above embodiments, CuO and RuO serving as the Cu source and Ru source serving as the second conductive material, respectively.
2 was used, but a combination of other Cu compound and Ru compound may be used as long as it finally becomes an oxide of Cu and Ru. From Table 1, the thick film thermistor formed by using the composition of the present invention is Cu and Ru, or Cu and Ru oxide,
A compound obtained by mixing and heating at least two kinds of combinations of hydroxides and carbonates and heating the mixture without directly reacting with a metal oxide having a thermistor property is added to the compound, whereby low resistance and high B can be obtained. Has a constant, and 125
It is stable with little change in resistance value against heat of ℃. Therefore, by using the above-mentioned thick film thermistor composition, by printing and firing a thick film thermistor body in a sandwich form between electrodes that are vertically opposed to each other as a thick film thermistor, a low resistance is obtained. It is possible to obtain a thick film thermistor having a high B constant and excellent heat resistance stability.
【0018】[0018]
【発明の効果】以上説明したように、本発明によれば、
耐熱安定性に欠けることがなく、低抵抗でB定数が高
く、熱に対する抵抗値変化率の少ない厚膜サーミスタ組
成物及び厚膜サーミスタを得ることができる。又、ガラ
ス量を一定にして、金属酸化物と第1、第2の導電材料
を配合したから、それぞれの添加量を変化させることに
より、幅の広い抵抗値とB定数の組み合せが可能にな
る。As described above, according to the present invention,
It is possible to obtain a thick film thermistor composition and a thick film thermistor which do not lack heat resistance stability, have a low resistance, a high B constant, and a small rate of change in resistance value with respect to heat. Further, since the metal oxide and the first and second conductive materials are mixed with the glass amount kept constant, a wide range of combinations of the resistance value and the B constant can be obtained by changing the addition amount of each. .
【図1】本発明の厚膜サーミスタ組成物を用いて形成さ
れた厚膜サーミスタの平面図である。FIG. 1 is a plan view of a thick film thermistor formed using the thick film thermistor composition of the present invention.
【図2】同上A−A線縦断面図である。FIG. 2 is a vertical sectional view taken along line AA of the above.
【図3】本発明の厚膜サーミスタのCuRuO3添加量
と抵抗値の特性図である。FIG. 3 is a characteristic diagram of CuRuO 3 addition amount and resistance value of the thick film thermistor of the present invention.
【図4】同上のCuRuO3添加量とB定数の特性図で
ある。FIG. 4 is a characteristic diagram of CuRuO 3 addition amount and B constant in the above.
1. 基板 2. 電極 3. 厚膜サーミスタ体 1. Substrate 2. Electrode 3. Thick film thermistor body
【表1】 [Table 1]
Claims (4)
化物のうちから選ばれたサーミスタ特性を有する少なく
とも2種の金属酸化物を混合し加熱焼成したものと、第
1の導電性物質としてのRuO2と、第2の導電性物質
としてのCuとRu、又はCuとRuの酸化物、水酸化
物、炭酸塩のいずれかの組み合わせのうちの少なくとも
2種を混合し加熱焼成した化合物と、ガラスとよりなる
ことを特徴とする厚膜サーミスタ組成物。1. A mixture of at least two metal oxides having thermistor characteristics selected from the oxides of Mn, Co, Fe, and Ni, which are mixed and heated, and as a first conductive material. RuO 2 and a compound obtained by mixing and heating at least two of Cu and Ru as the second conductive substance or any combination of oxides, hydroxides and carbonates of Cu and Ru, and And a thick film thermistor composition.
化物のうちから選ばれたサーミスタ特性を有する少なく
とも2種の金属酸化物を秤量し混合し加熱焼成し更に粉
砕し秤量するA工程と、第1の導電性物質としてのRu
O2を秤量するB工程と、第2の導電性物質としてのC
uとRu、又はCuとRuの酸化物、水酸化物、炭酸塩
のいずれかの組み合わせのうちの少なくとも2種を混合
し加熱焼成した化合物を更に粉砕し秤量するC工程と、
ガラスを秤量するD工程と、前記秤量4工程A、B、C
及びDで得られた各粉末を混合して厚膜ペーストを製造
するE工程と、前記E工程で得られた厚膜ペーストを加
熱焼成するF工程とからなることを特徴とする厚膜サー
ミスタ組成物の製造方法。2. A step of measuring and mixing at least two metal oxides having thermistor characteristics selected from the oxides of Mn, Co, Fe and Ni, mixing, heating and firing, and further crushing and weighing. , Ru as the first conductive material
Step B for weighing O 2 and C as the second conductive material
a step C in which at least two kinds of oxides, hydroxides, and carbonates of u and Ru, or Cu and Ru are mixed and heated and calcined, and further ground and weighed;
Step D for weighing glass and the four steps A, B, C for weighing
And a thick film thermistor composition comprising an E step of manufacturing the thick film paste by mixing the powders obtained in D and a F step of heating and firing the thick film paste obtained in the E step. Method of manufacturing things.
スタ組成物を、基板上に上下に対向して形成される電極
間に、サンドイッチ形になるように、印刷し焼成するこ
とにより形成することを特徴とする厚膜サーミスタ。3. The thick film thermistor composition according to claim 1 or 2 is formed by printing and firing so as to form a sandwich shape between electrodes formed on a substrate so as to face each other vertically. Thick film thermistor characterized by
製造方法と、基板上に上下に対向して形成される第1の
電極を印刷するG工程と、その第1の電極上の少なくと
も一部分と電気的に接続するように、前記サーミスタ組
成物を積層して印刷するH工程と、更にサーミスタ組成
物上の少なくとも一部分と電気的に接続するように第2
の電極を印刷するI工程と、前記第1の電極、前記サー
ミスタ組成物、及び前記第2の電極を基板と共に加熱焼
成するJ工程とよりなることを特徴とする厚膜サーミス
タの製造方法。4. A method for producing a thick film thermistor composition according to claim 2, a G step of printing first electrodes vertically opposed to each other on a substrate, and at least on the first electrodes. A step H of laminating and printing the thermistor composition so as to electrically connect to a part, and a second step to electrically connect to at least a part of the thermistor composition.
2. The method for producing a thick film thermistor, which comprises the step I of printing the electrode of step 1 and the step J of heating and firing the first electrode, the thermistor composition, and the second electrode together with the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04040029A JP3140140B2 (en) | 1992-01-10 | 1992-01-10 | Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04040029A JP3140140B2 (en) | 1992-01-10 | 1992-01-10 | Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0661016A true JPH0661016A (en) | 1994-03-04 |
JP3140140B2 JP3140140B2 (en) | 2001-03-05 |
Family
ID=12569485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04040029A Expired - Fee Related JP3140140B2 (en) | 1992-01-10 | 1992-01-10 | Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3140140B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5244550A (en) * | 1991-02-25 | 1993-09-14 | Toyota Jidosha Kabushiki Kaisha | Two liquid separating methods and apparatuses for implementing them |
CN114334322A (en) * | 2022-03-14 | 2022-04-12 | 西安宏星电子浆料科技股份有限公司 | Linear PTC (Positive temperature coefficient) resistor slurry with stable resistance value |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101770060B1 (en) * | 2016-03-29 | 2017-08-21 | 이규상 | Automated guided vehicle |
-
1992
- 1992-01-10 JP JP04040029A patent/JP3140140B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5244550A (en) * | 1991-02-25 | 1993-09-14 | Toyota Jidosha Kabushiki Kaisha | Two liquid separating methods and apparatuses for implementing them |
CN114334322A (en) * | 2022-03-14 | 2022-04-12 | 西安宏星电子浆料科技股份有限公司 | Linear PTC (Positive temperature coefficient) resistor slurry with stable resistance value |
CN114334322B (en) * | 2022-03-14 | 2022-05-27 | 西安宏星电子浆料科技股份有限公司 | Linear PTC (Positive temperature coefficient) resistor slurry with stable resistance value |
Also Published As
Publication number | Publication date |
---|---|
JP3140140B2 (en) | 2001-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3682840A (en) | Electrical resistor containing lead ruthenate | |
JPH0620001B2 (en) | Composition for producing electric resistance element and method for producing electric resistance element | |
JP2000044341A (en) | Dielectric ceramic composition | |
JPWO2004047124A1 (en) | Resistor paste, resistor and electronic components | |
JPH02249203A (en) | Resistance material and resistance paste | |
JPH0661016A (en) | Thick film thermistor composition and manufacture thereof as well as thick film thermistor using same and manufacture thereof | |
US4587040A (en) | Thick film thermistor composition | |
CN111386581A (en) | Thermistor sintered compact and temperature sensor element | |
JPH0677009A (en) | Thick film thermistor composition and manufacture thereof, and thick film thermistor using the composition and manufacture thereof | |
JP3140124B2 (en) | Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same | |
US5562972A (en) | Conductive paste and semiconductor ceramic components using the same | |
JPH0661015A (en) | Thick film thermistor composition and manufacture thereof as well as thick film thermistor using same and manufacture thereof | |
JPH0661013A (en) | Thick film positive temperature coefficient thermistor composition and manufacture thereof as well as thick film positive temperature coefficient thermistor using the composition | |
EP2450327A1 (en) | Semiconductor ceramic and positive-coefficient thermistor | |
JPH05129103A (en) | Thick-film thermistor composition and its manufacture, and thick-film thermistor using the composition and its manufacture | |
JPH11135303A (en) | Thick-film thermistor composition | |
CN115036086A (en) | Thermistor sintered compact and temperature sensor element | |
CN112088411A (en) | Thermistor sintered compact and temperature sensor element | |
JPH0799101A (en) | Thick film thermistor and its composition | |
JP5115949B2 (en) | Conductive material and resistor paste | |
JP3213647B2 (en) | Negative thermistor composition and negative thermistor | |
Burn et al. | New high-performance, low-fire MLC dielectrics for SMT applications | |
JPH06349330A (en) | Dielectric material and ceramic part | |
JP2642390B2 (en) | Thick film capacitors | |
JPH07183105A (en) | Chip type thermistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071215 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081215 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091215 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091215 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101215 Year of fee payment: 10 |
|
LAPS | Cancellation because of no payment of annual fees |