JP3140124B2 - Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same - Google Patents
Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the sameInfo
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- JP3140124B2 JP3140124B2 JP03342540A JP34254091A JP3140124B2 JP 3140124 B2 JP3140124 B2 JP 3140124B2 JP 03342540 A JP03342540 A JP 03342540A JP 34254091 A JP34254091 A JP 34254091A JP 3140124 B2 JP3140124 B2 JP 3140124B2
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- thick
- film thermistor
- oxide
- electrode
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- Thermistors And Varistors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板上の電極間に位置
して印刷形成される厚膜サーミスタ組成物、その製造方
法、この厚膜サーミスタ組成物を用いた厚膜サーミスタ
およびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film thermistor composition which is formed by printing between electrodes on a substrate, a method of manufacturing the same, a thick film thermistor using the thick film thermistor composition, and a method of manufacturing the same. It is about.
【０００２】[0002]
【従来の技術】従来の厚膜サーミスタ組成物としては、
例えばＭｎ（マンガン）、Ｃｏ（コバルト）、Ｆｅ
（鉄）、Ｎｉ（ニッケル）などのサーミスタ特性を有す
る金属酸化物と、導電性物質としてのＲｕＯ2と、ガラ
ス粉末とを混合したものが知られている。2. Description of the Related Art Conventional thick film thermistor compositions include:
For example, Mn (manganese), Co (cobalt), Fe
A mixture of a metal oxide having thermistor properties such as (iron) and Ni (nickel), RuO 2 as a conductive substance, and glass powder is known.
【０００３】そして、この厚膜サーミスタ組成物を絶縁
基板上に印刷形成された第１の電極上に一部を重ね合わ
せて印刷し、更にこの印刷形成した厚膜サーミスタ組成
物上に第２の電極を重ね合わせて印刷形成したサンドイ
ッチ形の厚膜サーミスタが知られている。このサンドイ
ッチ形の厚膜サーミスタは、同一平面上の電極間にサー
ミスタ組成物を印刷したシート状の厚膜サーミスタと比
べて抵抗値を低くすることができる。Then, the thick-film thermistor composition is partially printed on a first electrode printed on an insulating substrate, and a second electrode is further printed on the printed-formed thick-film thermistor composition. 2. Description of the Related Art A sandwich-type thick-film thermistor in which electrodes are superposed and printed is known. This sandwich-type thick-film thermistor can have a lower resistance value than a sheet-shaped thick-film thermistor in which a thermistor composition is printed between electrodes on the same plane.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このサ
ンドイッチ形の厚膜サーミスタでも抵抗値は８ｋΩ程度
が限度であり、それ以下の抵抗値に設定するには、第１
の導電性物質としてのＲｕＯ2を更に加えるか、あるい
はＭｎ、Ｃｏ、Ｆｅ、Ｎｉなどのサーミスタ特性を有す
る金属酸化物に更に直接Ｃｕ（銅）またはＣｕ酸化物を
加えている。However, the resistance value of this sandwich-type thick-film thermistor is limited to about 8 kΩ.
And addition of further or added RuO 2 as the conductive material, or Mn, Co, Fe, further direct Cu (copper) on a metal oxide having a thermistor characteristics, such as Ni or Cu oxide.
【０００５】ところで、従来のサーミスタ特性を有する
金属酸化物にＣｕを添加して酸化物とする方法におい
て、Ｍｎ、Ｃｏ、Ｆｅ、Ｎｉがスピネル構造を形成する
ように１０００℃以上の温度で反応させる必要がある。
そして、添加されたＣｕは、スピネル構造に取り込まれ
たり、ＣｕＯまたはＣｕ2Ｏのいずれかの化合物を生成
する。このうち、Ｃｕ2Ｏは長時間放置するとＣｕＯに
酸化するため、結晶構造および導電率のそれぞれの変
化、または、歪などに起因して、抵抗値変化を引き起こ
すと考えられている。すなわち、Ｃｕを添加しないサー
ミスタ組成物の抵抗値変化率が１２５℃、１０００時間
で＋１％程度であるのに対し、Ｃｕを添加したものは１
２５℃、１００時間で＋１０％〜＋１５％の変化を生じ
ることが知られる。In a conventional method of adding Cu to a metal oxide having thermistor characteristics to form an oxide, Mn, Co, Fe, and Ni are reacted at a temperature of 1000 ° C. or more so as to form a spinel structure. There is a need.
Then, the added Cu is taken into the spinel structure or generates a compound of either CuO or Cu 2 O. Among them, Cu 2 O is oxidized to CuO when left for a long time, and is considered to cause a change in the resistance value due to each change in the crystal structure and conductivity or due to strain or the like. That is, while the rate of change in the resistance value of the thermistor composition to which Cu was not added was about + 1% at 125 ° C. for 1000 hours, the rate to which Cu was added was 1%.
It is known that a change of + 10% to + 15% occurs at 25 ° C. for 100 hours.
【０００６】そこで、Ｃｕを添加する場合、１０００℃
以下の温度に抑えることが考えられる。しかしながら、
従来のサーミスタ組成物をプレス成形したのち、焼成し
て焼結させるというディスクリートタイプでは、化学反
応が生じないためスピネル構造が形成できず、その結果
サーミスタ特性が得られず、しかも焼結しないため、機
械的に脆くなる問題がある。Therefore, when adding Cu, 1000 ° C.
It is conceivable to keep the temperature below. However,
In the discrete type in which the conventional thermistor composition is press-formed, then fired and sintered, a chemical reaction does not occur, so that a spinel structure cannot be formed, and as a result, thermistor characteristics cannot be obtained, and furthermore, since sintering is not performed, There is a problem of mechanical brittleness.
【０００７】また、ＲｕＯ2の添加量が全体の７ｗｔ％
を超えると、抵抗値と抵抗値変化率を求める定数で一般
には２０００Ｋ〜５０００ＫであるＢ定数とが急激に低
下してしまい、サーミスタとして使用不可能になってし
まう。The amount of RuO 2 added is 7 wt% of the whole.
Is exceeded, the B value, which is a constant for obtaining the resistance value and the rate of change of the resistance value, which is generally 2000K to 5000K, sharply decreases, and the device cannot be used as a thermistor.
【０００８】さらに、サーミスタ特性を有する金属酸化
物にＣｕを直接添加する方法では、抵抗値は下がるが、
このＣｕを添加した組成は熱安定性に欠け、１２５℃、
１００時間で＋１０％〜＋１５％の抵抗値変化を起こす
という問題がある。Further, in the method of directly adding Cu to a metal oxide having thermistor characteristics, although the resistance value decreases,
This Cu-added composition lacks thermal stability, and has a temperature of 125 ° C.
There is a problem that the resistance value changes from + 10% to + 15% in 100 hours.
【０００９】本発明は、上述の問題点に鑑み、添加した
Ｃｕの耐熱変化を抑え、高いＢ定数を有しながらも抵抗
値が低減する厚膜サーミスタ組成物、その製造方法、厚
膜サーミスタおよびその製造方法を提供することを目的
とする。In view of the above problems, the present invention provides a thick-film thermistor composition which suppresses a change in heat resistance of added Cu and has a high B constant and a reduced resistance value, a method for producing the same, a thick-film thermistor, It is an object of the present invention to provide a manufacturing method thereof.
【００１０】[0010]
【課題を解決するための手段】請求項１記載の厚膜サー
ミスタ組成物は、Ｍｎ、Ｃｏ、Ｆｅ、Ｎｉのそれぞれの
金属酸化物のうちサーミスタ特性を有する少なくともい
ずれか２種の前記金属酸化物が混合されてあらかじめ焼
結された焼成物と、第１の導電性物質としてのＲｕＯ2
と、第２の導電性物質としてのＣｕ、Ｃｕ酸化物、Ｃｕ
水酸化物およびＣｕ炭酸塩のうちの少なくともいずれか
１種が焼成された酸化物と、ガラスとを原料としたもの
である。A thick-film thermistor composition according to claim 1, wherein at least any two of the metal oxides of Mn, Co, Fe and Ni have thermistor characteristics. Is mixed and sintered in advance , and RuO 2 as a first conductive substance
And Cu, Cu oxide, Cu as the second conductive substance
At least one of a hydroxide and a Cu carbonate is fired and an oxide is used as a raw material.
【００１１】請求項２記載の厚膜サーミスタ組成物の製
造方法は、Ｍｎ、Ｃｏ、Ｆｅ、Ｎｉのそれぞれの金属酸
化物のうちサーミスタ特性を有する少なくともいずれか
２種の前記金属酸化物を秤量して混合した後にあらかじ
め焼成して得られた焼成物を粉砕して秤量した焼成物粉
末と、第１の導電性物質としてのＲｕＯ2の粉末を秤量
したＲｕＯ2粉末と、第２の導電性物質としてのＣｕ、
Ｃｕ酸化物、Ｃｕ水酸化物およびＣｕ炭酸塩のうちの少
なくともいずれか１種をＣｕ酸化物にし、このＣｕ酸化
物の粉末を秤量したＣｕ酸化物粉末と、ガラスの粉末を
秤量したガラス粉末とを混合して厚膜ペーストを製造
し、この得られた厚膜ペーストを焼成して焼結するもの
である。According to a second aspect of the present invention, there is provided a method for producing a thick-film thermistor composition, wherein at least any two of the metal oxides of Mn, Co, Fe, and Ni having thermistor characteristics are weighed. beforehand after mixing Te
And baking powder were weighed by pulverizing the fired product obtained by because firing, and RuO 2 powder were weighed powders of RuO 2 as a first conductive material, Cu as a second conductive material,
Cu oxide, at least one of Cu hydroxide and Cu carbonate is converted into a Cu oxide, and a Cu oxide powder obtained by weighing the Cu oxide powder; and a glass powder obtained by weighing a glass powder. Are mixed to produce a thick film paste, and the obtained thick film paste is fired and sintered.
【００１２】請求項３記載の厚膜サーミスタは、請求項
１記載の厚膜サーミスタ組成物または請求項２記載の厚
膜サーミスタ組成物の製造方法により得られた厚膜サー
ミスタ組成物が、基板上に上下方向に対向して形成され
た電極間に位置して印刷されて焼成されたものである。A thick film thermistor according to a third aspect is characterized in that the thick film thermistor composition according to the first aspect or the thick film thermistor composition obtained by the method for producing the thick film thermistor composition according to the second aspect is applied to a substrate. Are printed and fired between the electrodes formed facing each other in the vertical direction.
【００１３】請求項４記載の厚膜サーミスタの製造方法
は、基板上に第１の電極を印刷形成し、この第１の電極
上に少なくとも一部が電気的に接続して請求項１記載の
厚膜サーミスタ組成物または請求項２記載の厚膜サーミ
スタ組成物の製造方法により得られた厚膜サーミスタ組
成物を積層して印刷形成し、この厚膜サーミスタ組成物
上に少なくとも一部が電気的に接続し、かつ前記第１の
電極に少なくとも一部が上下方向に対向して第２の電極
を積層して印刷形成し、前記基板を焼成するものであ
る。According to a fourth aspect of the present invention, in the method of manufacturing a thick film thermistor, a first electrode is formed by printing on a substrate, and at least a part of the first electrode is electrically connected to the first electrode. The thick-film thermistor composition or the thick-film thermistor composition obtained by the method for producing a thick-film thermistor composition according to claim 2 is laminated and printed, and at least a part of the thick-film thermistor composition is electrically connected to the thick-film thermistor composition. And a second electrode is laminated and printed at least partially facing the first electrode in the up-down direction, and the substrate is fired.
【００１４】[0014]
【作用】請求項１記載の厚膜サーミスタ組成物は、Ｍ
ｎ、Ｃｏ、Ｆｅ、Ｎｉのそれぞれの金属酸化物のうちサ
ーミスタ特性を有する少なくともいずれか２種の金属酸
化物を混合しあらかじめ焼結した焼成物と、第１の導電
性物質としてのＲｕＯ2と、第２の導電性物質としての
Ｃｕ、Ｃｕ酸化物、Ｃｕ水酸化物およびＣｕ炭酸塩のう
ちの少なくともいずれか１種を焼成した酸化物と、ガラ
スとを原料とするため、低抵抗でＢ定数が高く、耐熱安
定性が得られる。The thick-film thermistor composition according to claim 1 is characterized in that
n, Co, Fe, and baked product previously sintered mixture of at least any two of the metal oxide having a thermistor characteristic of each metal oxide of Ni, and RuO 2 as a first conductive material , An oxide obtained by calcining at least one of Cu, Cu oxide, Cu hydroxide, and Cu carbonate as the second conductive material, and glass as raw materials; Constant is high and heat stability is obtained.
【００１５】請求項２記載の厚膜サーミスタ組成物の製
造方法は、Ｍｎ、Ｃｏ、Ｆｅ、Ｎｉのそれぞれの金属酸
化物のうちサーミスタ特性を有する少なくともいずれか
２種の金属酸化物を混合しあらかじめ焼結した焼成物を
粉砕して秤量した焼成物粉末と、第１の導電性物質とし
てのＲｕＯ2粉末と、第２の導電性物質としてのＣｕ、
Ｃｕ酸化物、Ｃｕ水酸化物およびＣｕ炭酸塩のうちの少
なくともいずれか１種を焼成した酸化物粉末と、ガラス
粉末とを混合して得られた厚膜ペーストを焼成して焼結
するため、低抵抗でＢ定数が高く、耐熱安定性の厚膜サ
ーミスタ組成物が得られる。A method for producing a thick-film thermistor composition according to claim 2 is characterized in that at least any two metal oxides having thermistor characteristics among the respective metal oxides of Mn, Co, Fe and Ni are mixed and prepared in advance. A fired material powder obtained by grinding and weighing the sintered fired material, RuO 2 powder as a first conductive material, Cu as a second conductive material,
In order to fire and sinter a thick film paste obtained by mixing an oxide powder obtained by firing at least one of Cu oxide, Cu hydroxide and Cu carbonate, and a glass powder, A thick film thermistor composition having low resistance, high B constant and heat stability can be obtained.
【００１６】請求項３記載の厚膜サーミスタは、請求項
１記載の厚膜サーミスタ組成物または請求項２記載の厚
膜サーミスタ組成物の製造方法により得られた厚膜サー
ミスタ組成物を、基板上に上下方向に対向して形成され
た電極間に位置して印刷して焼成して形成するため、低
抵抗でＢ定数が高く、耐熱安定性が得られる。According to a third aspect of the present invention, there is provided a thick-film thermistor according to the first aspect or the thick-film thermistor obtained by the method for producing the thick-film thermistor according to the second aspect. Since it is formed by printing and sintering it between electrodes formed vertically facing each other, it has low resistance, high B constant, and heat resistance stability.
【００１７】請求項４記載の厚膜サーミスタの製造方法
は、基板上に印刷形成した第１の電極上に、少なくとも
一部が電気的に接続して請求項１記載の厚膜サーミスタ
組成物または請求項２記載の厚膜サーミスタ組成物の製
造方法により得られた厚膜サーミスタ組成物を積層して
印刷形成した後、厚膜サーミスタ組成物上に少なくとも
一部が電気的に接続しかつ第１の電極に少なくとも一部
が上下方向に対向して第２の電極を積層して印刷形成し
て基板を焼成するため、低抵抗でＢ定数が高く、耐熱安
定性の厚膜サーミスタが得られる。According to a fourth aspect of the present invention, there is provided a method of manufacturing a thick film thermistor according to the first aspect, wherein at least a portion is electrically connected to the first electrode printed on the substrate. A method of manufacturing a thick-film thermistor composition according to claim 2, wherein the thick-film thermistor composition obtained by laminating and printing is formed, and then at least a part of the thick-film thermistor composition is electrically connected to the first thick-film thermistor composition. Since the second electrode is laminated and printed at least partially facing the electrode in the up-down direction and printed, and the substrate is baked, a thick film thermistor having low resistance, high B constant, and heat stability can be obtained.
【００１８】[0018]
【実施例】以下、本発明の一実施例の厚膜サーミスタの
構成を図面を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a thick film thermistor according to one embodiment of the present invention will be described below with reference to the drawings.
【００１９】図１および図２において、１は絶縁性の基
板で、この基板１の上面には、第１の電極2aが例えば印
刷により層状に形成されている。In FIGS. 1 and 2, reference numeral 1 denotes an insulating substrate, and a first electrode 2a is formed on the upper surface of the substrate 1 by printing, for example.
【００２０】また、基板１の上面には、一部が第１の電
極2aの上面の一部に亘って電気的に接続するように積層
する厚膜サーミスタ体３が例えば印刷により層状に積層
形成されている。この厚膜サーミスタ体３は、例えばＭ
ｎ、Ｃｏ、Ｆｅのサーミスタ特性を有する金属酸化物で
ある酸化マンガン（Ｍｎ3Ｏ4）、酸化コバルト（Ｃｏ3
Ｏ4）、酸化鉄（Ｆｅ3Ｏ4）を混合してあらかじめ焼成
した焼成物である金属酸化物の粉末としての焼成物粉末
と、第１の導電性物質としてのＲｕＯ2粉末と、第２の
導電性物質としてのＣｕ酸化物であるＣｕＯを焼成して
得られた酸化物の粉末であるＣｕ酸化物粉末と、ガラス
粉末とを混合して形成した厚膜サーミスタペーストにて
印刷形成されている。On the upper surface of the substrate 1, a thick-film thermistor body 3 which is partially laminated so as to be electrically connected to a part of the upper surface of the first electrode 2a is formed in a layered form by, for example, printing. Have been. This thick-film thermistor body 3 is, for example, M
Manganese oxide (Mn 3 O 4 ) and cobalt oxide (Co 3 ), which are metal oxides having thermistor characteristics of n, Co, and Fe
O 4), and calcined powder as a metal oxide powder is calcined product was calcined in advance by mixing iron oxide (Fe 3 O 4), and RuO 2 powder as a first conductive material, the second Printed with a thick-film thermistor paste formed by mixing Cu oxide powder, which is an oxide powder obtained by firing CuO, which is a Cu oxide as a conductive substance, and glass powder. I have.
【００２１】さらに、基板１の上面には、一部が厚膜サ
ーミスタ体３の上面の一部に亘って電気的に接続し、か
つ上下方向に例えば対向面積が０．２５ｍｍ2となるよ
うに対向するように積層する第２の電極2bが例えば印刷
により層状に積層形成され、厚膜サーミスタが形成され
ている。Further, a part of the upper surface of the substrate 1 is electrically connected to a part of the upper surface of the thick film thermistor body 3 so that the facing area in the vertical direction is, for example, 0.25 mm 2. The second electrodes 2b stacked so as to face each other are formed in a layered manner by, for example, printing, thereby forming a thick-film thermistor.
【００２２】次に、上記厚膜サーミスタの製造工程を説
明する。Next, the manufacturing process of the thick film thermistor will be described.
【００２３】まず、Ｍｎ3Ｏ4、Ｃｏ3Ｏ4、Ｆｅ3Ｏ4を
１：１：０．２のモル比で混合し、成形してあらかじめ
焼成することにより、固相反応させて得た焼成物である
金属酸化物の粉末である焼成物粉末３１ｗｔ％と、第１
の導電性物質としてのＲｕＯ2粉末４ｗｔ％と、第２の
導電性物質としての酸化銅（ＣｕＯ）であるＣｕ酸化物
粉末１０ｗｔ％と、ホウケイ酸鉛ガラス粉末５５ｗｔ％
とを秤量し、自動混合機またはボールミルにより混合し
て混合物とする。First, Mn 3 O 4 , Co 3 O 4 , and Fe 3 O 4 are mixed at a molar ratio of 1: 1: 0.2, molded, and baked in advance to obtain a solid phase reaction. 31 wt% of a fired material powder which is a powder of a metal oxide which is a fired material obtained by
4 wt% of RuO 2 powder as a conductive material, 10 wt% of Cu oxide powder as copper oxide (CuO) as a second conductive material, and 55 wt% of lead borosilicate glass powder
Are weighed and mixed by an automatic mixer or a ball mill to form a mixture.
【００２４】ここで、有機ビヒクルとして７ｗｔ％のエ
チルセルロースを含むブチルカルビトールを混合物の２
６ｗｔ％となるように加え、３本ロールなどで十分に混
合し厚膜サーミスタペーストを作製する。Here, butyl carbitol containing 7% by weight of ethylcellulose as an organic vehicle was used as a mixture.
The thickness is adjusted to 6 wt%, and the mixture is sufficiently mixed with a three-roll mill or the like to produce a thick-film thermistor paste.
【００２５】そして、図１および図２に示すように、基
板１上に第１の電極2aを例えば印刷により層状に形成す
る。次に、作製した厚膜サーミスタペーストを一部が基
板１の上面から第１の電極2aの上面の一部に亘って電気
的に接続するように例えば焼成後の膜厚が４０μｍとな
るように印刷して、層状の厚膜サーミスタ体３を積層形
成する。この後、一部が基板１の上面から厚膜サーミス
タ体３の上面の一部に亘って第１の電極2aと上下方向に
対向面積が０．２５ｍｍ2となるように対向して電気的
に接続するように第１の電極2aを例えば印刷により層状
に形成する。Then, as shown in FIGS. 1 and 2, the first electrode 2a is formed in a layer on the substrate 1 by, for example, printing. Next, the prepared thick-film thermistor paste is electrically connected from the upper surface of the substrate 1 to a part of the upper surface of the first electrode 2a, for example, so that the film thickness after firing becomes 40 μm. By printing, a layered thick-film thermistor body 3 is formed by lamination. Thereafter, a part of the upper surface of the thick-film thermistor body 3 partially opposes the first electrode 2a from the upper surface of the substrate 1 to the upper surface of the thick-film thermistor body 3 so that the opposing area is 0.25 mm 2. The first electrode 2a is formed in a layer shape by, for example, printing so as to be connected.
【００２６】この後、基板１を例えば８５０℃で１０分
間焼成し、上下に対向する第１の電極2aおよび第２の電
極2b間に厚膜サーミスタ体３がサンドイッチ形に位置す
る厚膜サーミスタを形成する。Thereafter, the substrate 1 is baked at, for example, 850 ° C. for 10 minutes, and the thick-film thermistor 3 in which the thick-film thermistor body 3 is sandwiched between the first and second electrodes 2a and 2b facing each other is placed. Form.
【００２７】この得られた厚膜サーミスタは、抵抗値が
８７１Ω、Ｂ定数が２９３６Ｋ、１２５℃で１０００時
間加熱の抵抗値変化率が＋１．９％で安定した特性とな
った。The obtained thick film thermistor had a stable characteristic with a resistance value of 871 Ω, a B constant of 2936 K, and a resistance value change rate of + 1.9% after heating at 125 ° C. for 1000 hours.
【００２８】次に、上記厚膜サーミスタの作用を説明す
る。Next, the operation of the thick film thermistor will be described.
【００２９】表１、図３および図４に、本発明の厚膜サ
ーミスタ試料２、３、４、５および６の抵抗値、Ｂ定
数、１２５℃で１００時間および１０００時間の抵抗値
変化率を示す。Table 1, FIG. 3 and FIG. 4 show the resistance values, B constants, and the rate of change of the resistance values at 125 ° C. for 100 hours and 1000 hours, respectively, of the thick film thermistor samples 2, 3, 4, 5 and 6 of the present invention. Show.
【００３０】表１において、実施例１は１００時間、実
施例２〜６は１０００時間で加熱した結果である。いず
れも１２５℃の耐熱変化であり、抵抗値は２５℃で膜厚
４０μｍ、対向面積０．２５ｍｍ2の値であり、Ｂ定数
は２５℃での抵抗値を１００℃の抵抗値で割ったものの
自然対数にそれらの温度の逆数の差をとったものであ
る。In Table 1, Example 1 shows the result of heating for 100 hours, and Examples 2 to 6 show the result of heating for 1000 hours. In each case, the change in heat resistance was 125 ° C., the resistance value was a value of 40 μm in thickness at 25 ° C., the facing area was 0.25 mm 2 , and the B constant was obtained by dividing the resistance value at 25 ° C. by the resistance value at 100 ° C. It is the difference between the natural logarithm and the reciprocal of those temperatures.
【００３１】[0031]
【表１】 これら表１、図３および図４に示す結果から、金属酸化
物とともに混合し成形してあらかじめ固相反応させるこ
とによりＢ定数が低下したり、耐熱安定性に欠ける試料
番号１の従来例の厚膜サーミスタに比べて、本発明の厚
膜サーミスタ組成物を用いて形成した厚膜サーミスタ
は、Ｃｕをサーミスタ特性を有する金属酸化物と反応さ
せずに別途添加することにより、低抵抗で高いＢ定数を
有し、さらに１２５℃の熱に対して抵抗値変化率が少な
く、安定である。このため、上述の厚膜サーミスタ組成
物を用いて厚膜サーミスタとして基板１上に上下に対向
して形成される第１の電極2aおよび第２の電極2b間にサ
ンドイッチ形に厚膜サーミスタ体３を印刷、焼成するこ
とにより、低抵抗でＢ定数が高く、非常に耐熱安定性が
良好な厚膜サーミスタを得ることができる。[Table 1] From the results shown in Table 1, FIG. 3 and FIG. 4, the B constant is reduced by mixing and molding with the metal oxide and preliminarily subjected to a solid phase reaction, and the thickness of the conventional example of Sample No. 1 lacking in heat resistance stability is reduced. Compared with the film thermistor, the thick film thermistor formed using the thick film thermistor composition of the present invention has a low resistance and a high B constant by adding Cu separately without reacting with a metal oxide having thermistor characteristics. In addition, the resistance change rate is small with respect to heat of 125 ° C., and the composition is stable. For this reason, the thick-film thermistor body 3 is sandwiched between the first electrode 2a and the second electrode 2b which are formed on the substrate 1 so as to face each other as a thick-film thermistor using the above-mentioned thick-film thermistor composition. By printing and baking, a thick-film thermistor with low resistance, high B constant and very good heat stability can be obtained.
【００３２】また、ガラス量を一定にして、金属酸化物
と第１の導電性物質および第２の導電性物質とを配合し
たから、それぞれの添加量を変化させることにより、幅
の広い抵抗値とＢ定数との組み合せが可能になる。Further, by the glass amount constant, because blended with metal oxide and first conductive material and second conductive material, by varying the respective amount, wide resistance width And the B constant can be combined.
【００３３】なお、上記実施例において、第２の導電性
物質Ｃｕ源としてＣｕＯを用いたが他のＣｕ化合物、す
なわちＣｕ、Ｃｕ酸化物、Ｃｕ水酸化物およびＣｕ炭酸
塩のうちの少なくともいずれか１種が焼成された酸化物
でもよい。In the above embodiment, CuO was used as the second conductive substance Cu source, but at least one of other Cu compounds, namely Cu, Cu oxide, Cu hydroxide and Cu carbonate. One type may be a calcined oxide.
【００３４】また、Ｍｎ3Ｏ4、Ｃｏ3Ｏ4、Ｆｅ3Ｏ4を
１：１：０．２のモル比で混合して厚膜サーミスタペー
ストの焼成物粉末を調整したが、この比率に限られるも
のではなく、さらにはＭｎ、Ｃｏ、Ｆｅ、Ｎｉのそれぞ
れの金属酸化物のうちサーミスタ特性を有する少なくと
もいずれか２種の金属酸化物を混合してあらかじめ焼結
した焼成物を用いる組成であればよい。Also, Mn 3 O 4 , Co 3 O 4 , and Fe 3 O 4 were mixed at a molar ratio of 1: 1: 0.2 to prepare a fired powder of the thick film thermistor paste. The composition is not limited to a composition using a fired product obtained by mixing at least any two metal oxides having thermistor characteristics among the respective metal oxides of Mn, Co, Fe, and Ni and pre- sintering them. I just need.
【００３５】[0035]
【発明の効果】請求項１記載の厚膜サーミスタ組成物に
よれば、サーミスタ特性を有するＭｎ、Ｃｏ、Ｆｅ、Ｎ
ｉの少なくともいずれか２種の金属酸化物をあらかじめ
混合焼成した焼成物と、ＲｕＯ2と、Ｃｕ、Ｃｕ酸化
物、Ｃｕ水酸化物およびＣｕ炭酸塩のうちの少なくとも
いずれか１種を焼成した酸化物と、ガラスとを原料とし
たため、低抵抗でＢ定数が高く、熱に対する抵抗値変化
率の少ない耐熱安定性が得られる。According to the thick film thermistor composition of the present invention, Mn, Co, Fe, N having thermistor characteristics
advance at least any two of the metal oxide i
Since a fired material obtained by mixing and firing , RuO 2 , an oxide obtained by firing at least one of Cu, Cu oxide, Cu hydroxide and Cu carbonate, and glass are used as raw materials, low resistance is obtained. A high B constant and a high heat stability with a small rate of change in resistance to heat can be obtained.
【００３６】請求項２記載の厚膜サーミスタ組成物の製
造方法によれば、サーミスタ特性を有するＭｎ、Ｃｏ、
Ｆｅ、Ｎｉの少なくともいずれか２種の金属酸化物をあ
らかじめ混合焼成した焼成物粉末と、ＲｕＯ2粉末と、
Ｃｕ、Ｃｕ酸化物、Ｃｕ水酸化物およびＣｕ炭酸塩のう
ちの少なくともいずれか１種を焼成した酸化物粉末と、
ガラス粉末とを混合して得た厚膜ペーストを焼成して焼
結するため、低抵抗でＢ定数が高く、耐熱安定性の厚膜
サーミスタ組成物が得られる。According to the method for producing a thick-film thermistor composition according to claim 2, Mn, Co, which has thermistor characteristics,
Fe, at least any two of the metal oxide Oa of Ni
A baked product powder preliminarily mixed and baked , a RuO 2 powder,
An oxide powder obtained by calcining at least one of Cu, Cu oxide, Cu hydroxide and Cu carbonate;
Since the thick film paste obtained by mixing with the glass powder is fired and sintered, a thick film thermistor composition having low resistance, high B constant, and heat stability can be obtained.
【００３７】請求項３記載の厚膜サーミスタによれば、
請求項１記載の厚膜サーミスタ組成物または請求項２記
載の厚膜サーミスタ組成物の製造方法により得た厚膜サ
ーミスタ組成物を、基板上に上下方向に対向して形成し
た電極間に位置して印刷し焼成して形成するため、低抵
抗でＢ定数が高く、耐熱安定性が得られる。According to the thick film thermistor of the third aspect,
The thick-film thermistor composition according to claim 1 or the thick-film thermistor composition obtained by the method for producing a thick-film thermistor composition according to claim 2 is located between electrodes formed on a substrate so as to face vertically. Since it is formed by printing and firing, it has low resistance, high B constant, and heat stability.
【００３８】請求項４記載の厚膜サーミスタの製造方法
によれば、基板上の第１の電極上に少なくとも一部が電
気的に接続して積層印刷形成した請求項１記載の厚膜サ
ーミスタ組成物または請求項２記載の厚膜サーミスタ組
成物の製造方法により得た厚膜サーミスタ組成物上に、
少なくとも一部が電気的に接続しかつ第１の電極に少な
くとも一部が上下方向に対向して第２の電極を積層して
印刷形成した後、基板を焼成するため、低抵抗でＢ定数
が高く、耐熱安定性の厚膜サーミスタが得られる。According to the method of manufacturing a thick-film thermistor according to claim 4, at least a part of the thick-film thermistor is electrically connected to the first electrode on the substrate to form a laminated print. A thick film thermistor composition obtained by the method for producing a thick film thermistor composition according to claim 2;
After laminating and printing the second electrode at least partially electrically connected and at least partially facing the first electrode in the up-down direction, the substrate is baked. A thick, high-temperature stable thermistor is obtained.
【図１】本発明の厚膜サーミスタ組成物を用いて形成さ
れた厚膜サーミスタの平面図である。FIG. 1 is a plan view of a thick-film thermistor formed using the thick-film thermistor composition of the present invention.
【図２】同上図１のＡ−Ａ線縦断面図である。FIG. 2 is a vertical sectional view taken along the line AA of FIG. 1;
【図３】同上厚膜サーミスタのＣｕＯ添加量と抵抗値と
の関係を示す特性図である。FIG. 3 is a characteristic diagram showing a relationship between a CuO addition amount and a resistance value of the same thick film thermistor.
【図４】同上のＣｕＯ添加量とＢ定数との関係を示す特
性図である。FIG. 4 is a characteristic diagram showing a relationship between the CuO addition amount and the B constant according to the first embodiment.
１ 基板 2a 第１の電極 2b 第２の電極 ３ 厚膜サーミスタ体 DESCRIPTION OF SYMBOLS 1 Substrate 2a 1st electrode 2b 2nd electrode 3 Thick film thermistor body
Claims (4)
属酸化物のうちサーミスタ特性を有する少なくともいず
れか２種の前記金属酸化物が混合されてあらかじめ焼結
された焼成物と、 第１の導電性物質としてのＲｕＯ2と、 第２の導電性物質としてのＣｕ、Ｃｕ酸化物、Ｃｕ水酸
化物およびＣｕ炭酸塩のうちの少なくともいずれか１種
が焼成された酸化物と、 ガラスとを原料としたことを特徴とした厚膜サーミスタ
組成物。1. A fired product in which at least any two of the metal oxides of Mn, Co, Fe, and Ni having thermistor characteristics are mixed and pre- sintered, and RuO 2 as a conductive material, an oxide obtained by firing at least one of Cu, Cu oxide, Cu hydroxide and Cu carbonate as a second conductive material, and glass A thick film thermistor composition characterized by being used as a raw material.
属酸化物のうちサーミスタ特性を有する少なくともいず
れか２種の前記金属酸化物を秤量して混合した後にあら
かじめ焼成して得られた焼成物を粉砕して秤量した焼成
物粉末と、第１の導電性物質としてのＲｕＯ2の粉末を
秤量したＲｕＯ2粉末と、第２の導電性物質としてのＣ
ｕ、Ｃｕ酸化物、Ｃｕ水酸化物およびＣｕ炭酸塩のうち
の少なくともいずれか１種をＣｕ酸化物にし、このＣｕ
酸化物の粉末を秤量したＣｕ酸化物粉末と、ガラスの粉
末を秤量したガラス粉末とを混合して厚膜ペーストを製
造し、 この得られた厚膜ペーストを焼成して焼結することを特
徴とする厚膜サーミスタ組成物の製造方法。2. A Mn, rough Co, Fe, after mixing by weighing at least any two of said metal oxides having a thermistor characteristic of each metal oxide of Ni
And baking powder were weighed by grinding the resulting fired product was beforehand firing, and RuO 2 powder were weighed powders of RuO 2 as a first conductive material, C as a second conductive material
u, Cu oxide, Cu hydroxide and / or Cu carbonate are converted into Cu oxides, and the Cu
A thick film paste is manufactured by mixing a Cu oxide powder weighed with an oxide powder and a glass powder weighed with a glass powder, and the obtained thick film paste is fired and sintered. For producing a thick film thermistor composition.
たは請求項２記載の厚膜サーミスタ組成物の製造方法に
より得られた厚膜サーミスタ組成物が、基板上に上下方
向に対向して形成された電極間に位置して印刷されて焼
成されたことを特徴とした厚膜サーミスタ。3. The thick-film thermistor composition according to claim 1 or the thick-film thermistor composition obtained by the method for producing a thick-film thermistor composition according to claim 2 is formed on a substrate so as to face vertically. A thick-film thermistor, which is printed and fired between the electrodes.
請求項１記載の厚膜サーミスタ組成物または請求項２記
載の厚膜サーミスタ組成物の製造方法により得られた厚
膜サーミスタ組成物を積層して印刷形成し、 この厚膜サーミスタ組成物上に少なくとも一部が電気的
に接続し、かつ前記第１の電極に少なくとも一部が上下
方向に対向して第２の電極を積層して印刷形成し、 前記基板を焼成することを特徴とする厚膜サーミスタの
製造方法。4. A thick-film thermistor composition according to claim 1, wherein a first electrode is formed by printing on the substrate, and at least a part of the first electrode is electrically connected to the first electrode. The thick-film thermistor composition obtained by the method for producing a thick-film thermistor composition is laminated and printed, and at least a part of the thick-film thermistor composition is electrically connected to the first electrode. A method for manufacturing a thick-film thermistor, comprising laminating and printing a second electrode at least partially facing vertically, and baking the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03342540A JP3140124B2 (en) | 1991-10-24 | 1991-10-24 | Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03342540A JP3140124B2 (en) | 1991-10-24 | 1991-10-24 | Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07122404A JPH07122404A (en) | 1995-05-12 |
| JP3140124B2 true JP3140124B2 (en) | 2001-03-05 |
Family
ID=18354543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03342540A Expired - Lifetime JP3140124B2 (en) | 1991-10-24 | 1991-10-24 | Thick film thermistor composition, method for producing the same, thick film thermistor and method for producing the same |
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| Country | Link |
|---|---|
| JP (1) | JP3140124B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9315231D0 (en) * | 1993-07-22 | 1993-09-08 | York Ltd | Optical time domain reflextometry |
| CN114334322B (en) * | 2022-03-14 | 2022-05-27 | 西安宏星电子浆料科技股份有限公司 | Linear PTC (Positive temperature coefficient) resistor slurry with stable resistance value |
-
1991
- 1991-10-24 JP JP03342540A patent/JP3140124B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
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