JP3255814B2 - Metal-based circuit board and module using the same - Google Patents

Metal-based circuit board and module using the same

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Publication number
JP3255814B2
JP3255814B2 JP00803395A JP803395A JP3255814B2 JP 3255814 B2 JP3255814 B2 JP 3255814B2 JP 00803395 A JP00803395 A JP 00803395A JP 803395 A JP803395 A JP 803395A JP 3255814 B2 JP3255814 B2 JP 3255814B2
Authority
JP
Japan
Prior art keywords
metal
circuit board
volume
based circuit
epoxy resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP00803395A
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Japanese (ja)
Other versions
JPH08204301A (en
Inventor
誠 福田
直己 米村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は放熱性に優れ、かつ電気
的信頼性が高い電気機器に用いられる金属ベース回路基
板とそれを用いたモジュールに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal-based circuit board having excellent heat dissipation and high electrical reliability and a module using the same.

【0002】[0002]

【従来の技術】近年、電子機器は小型化、軽量化の方向
に進んでおり、IC、LSI、パワートランジスターな
どの高発熱部品から如何に放熱するか、そして、高密度
実装するかが大きな課題となっている。この様な背景か
ら、金属ベース回路基板が、特にハイパワー分野におい
て、使用されてきた。
2. Description of the Related Art In recent years, electronic equipment has been reduced in size and weight, and it is important to determine how to radiate heat from high heat-generating components such as ICs, LSIs, and power transistors, and to mount them at high density. It has become. Against this background, metal-based circuit boards have been used, especially in the high power field.

【0003】金属ベース回路基板は、高熱伝導性を発現
させるために、酸化アルミニウム等の無機物を高充填し
た樹脂が金属板上に塗布硬化されて、絶縁層を形成し、
この絶縁層を介して、金属箔等からなる電気回路が搭載
されている構造を有する。
[0003] In order to exhibit high thermal conductivity, a metal-based circuit board is coated with a resin highly filled with an inorganic substance, such as aluminum oxide, and is cured on a metal plate to form an insulating layer.
It has a structure in which an electric circuit made of metal foil or the like is mounted via this insulating layer.

【0004】又、金属ベース回路基板は、セラミックス
基板の代替としてパワー素子のみを搭載していた経緯が
あり、熱伝導性を向上させる目的で、比誘電率が高い酸
化アルミニウムを無機充填材に用いていた(特開昭64ー69
661号公報)。
[0004] Further, the metal-based circuit board has a history of mounting only a power element as an alternative to a ceramic substrate, and uses aluminum oxide having a high relative dielectric constant as an inorganic filler for the purpose of improving thermal conductivity. (JP-A-64-69
No. 661).

【0005】しかし、回路基板のIPM(Interigent Po
wer Module)化が進み、制御素子とパワー素子が一体化
して搭載されるにつれ、酸化アルミニウムを無機フィラ
ーとした金属ベース回路基板においては、パワー素子か
ら生じるノイズのために、それを用いたモジュールが誤
動作する問題を生じる問題があった。即ち、従来の金属
ベース回路基板では0.6℃/W以下の熱伝導性を有するも
のの、静電容量は1cm2当たり50pFより大きく、このため
パワー素子からのノイズを吸収できないという問題があ
った。
However, the IPM (Interigent Po
As control elements and power elements have been integrated and mounted, metal-based circuit boards that use aluminum oxide as an inorganic filler have developed modules using them due to noise generated from power elements. There is a problem that causes a malfunction. That is, although the conventional metal-based circuit board has a thermal conductivity of 0.6 ° C./W or less, the capacitance is larger than 50 pF / cm 2 , so that there is a problem that noise from the power element cannot be absorbed.

【0006】金属ベース回路基板については、その構造
上、熱抵抗を重要視して絶縁層厚を薄くすると静電容量
は増大し、逆に、静電容量を低減させようと絶縁層の厚
みを厚くすると熱抵抗が大きくなるという制約があるの
で、高い熱伝導性を有しながらも、静電容量が小さく耐
ノイズ特性に優れ、その結果、高い電気信頼性を有す回
路基板を得ることは容易なことでない。
With respect to the metal-based circuit board, the capacitance increases when the thickness of the insulating layer is reduced in consideration of the thermal resistance, so that the thickness of the insulating layer is reduced in order to reduce the capacitance. Since there is a restriction that the thermal resistance increases when the thickness is increased, it is not possible to obtain a circuit board having high thermal conductivity, low capacitance, excellent noise resistance, and as a result, high electrical reliability. Not easy.

【0007】[0007]

【発明が解決しようとする課題】本発明の目的は、熱抵
抗、静電容量が小さく、耐ノイズ性に優れ電気的に信頼
性の高い金属ベース回路基板とモジュールを提供するこ
とである。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a metal-based circuit board and a module having a small thermal resistance and a small capacitance, excellent noise resistance, and high electrical reliability.

【0008】[0008]

【課題を解決するための手段】本発明は、金属板の少な
くとも一主面上にエポキシ樹脂からなる絶縁接着材層を
介して金属箔を設けた金属ベース回路基板であって、熱
抵抗が 0.6℃/W以下であり、かつ静電容量が50
pF/cm2以下であることを特徴とする金属ベース回
路基板である。
SUMMARY OF THE INVENTION The present invention is a metal-based circuit board having a metal foil provided on at least one main surface of a metal plate via an insulating adhesive layer made of epoxy resin, and having a thermal resistance of 0. 0.6 ° C./W or less and the capacitance is 50
A metal-based circuit board having a pF / cm 2 or less.

【0009】本発明は、絶縁接着材層が、酸化アルミニ
ウムを1容積%以上80容積%以下含有する無機化合物
を、50容積%以上80容積%以下エポキシ樹脂に配合
し硬化させてなることを特徴とする金属ベース回路基板
である。
[0009] The present invention is characterized in that the insulating adhesive layer is obtained by mixing and curing an inorganic compound containing aluminum oxide in an amount of 1 to 80% by volume with an epoxy resin in an amount of 50 to 80% by volume. Is a metal-based circuit board.

【0010】本発明は、絶縁接着材層が、酸化アルミニ
ウムを1容積%以上80容積%以下含有し残部が酸化ケ
イ素、窒化ホウ素、窒化アルミニウムの群から選ばれた
1種以上からなる無機化合物を、50容積%以上80容
積%以下エポキシ樹脂に配合し硬化させたことを特徴と
する金属ベース回路基板である。
According to the present invention, there is provided an inorganic compound in which the insulating adhesive layer contains aluminum oxide in an amount of 1% by volume to 80% by volume and the balance is at least one selected from the group consisting of silicon oxide, boron nitride and aluminum nitride. A metal-based circuit board characterized by being mixed with an epoxy resin of 50% by volume or more and 80% by volume or less and cured.

【0011】本発明は、絶縁接着材層が、窒化ホウ素を
30容積以上80容積%以上含有し残部が酸化ケイ素で
ある無機化合物を、50容積%以上80容積%以下エポ
キシ樹脂に配合し硬化させてなることを特徴とする金属
ベース回路基板である。更に、本発明は、上記の金属ベ
ース回路基板を用いてなるモジュールである。
The present invention, the insulating adhesive layer, the remainder containing boron nitride 30 volume or 80% by volume or more inorganic compounds are silicon oxide, Epo 50 volume% to 80 volume% or less
A metal-based circuit board characterized by being mixed with a xy resin and cured. Further, the present invention is a module using the above metal-based circuit board.

【0012】以下、本発明について詳細に説明する。Hereinafter, the present invention will be described in detail.

【0013】本発明でいう静電容量とは、1cm2当たり
に換算した静電容量を示す。本発明の金属ベース回路基
板は、長期に渡り電気的に信頼性が高いモジュールを得
る為に、静電容量が50pF/cm2以下であり、しかも熱抵抗
が0.6℃/W以下であることが必須である。静電容量が50
pF/cm2を越える場合、この基板を用いたモジュールの耐
ノイズ性が急激に悪くなるし、又、熱抵抗が0.6℃/Wを
越える場合は、金属ベース回路基板上に搭載される電子
部品の放熱が充分でない為に、長期信頼性が充分でな
い。
The term "capacitance" as used in the present invention refers to a capacitance per 1 cm 2 . The metal-based circuit board of the present invention has a capacitance of 50 pF / cm 2 or less and a thermal resistance of 0.6 ° C./W or less in order to obtain a module having high electrical reliability for a long time. Required. Capacitance is 50
If it exceeds pF / cm 2 , the noise resistance of the module using this substrate will deteriorate rapidly, and if the thermal resistance exceeds 0.6 ° C / W, the electronic components mounted on the metal-based circuit board Is not sufficient for long-term reliability due to insufficient heat radiation.

【0014】本発明を達成する具体的な手段について、
以下、図をもって説明する。
Specific means for achieving the present invention include:
Hereinafter, description will be made with reference to the drawings.

【0015】図1は、本発明の金属ベース回路基板の一
例を示した模式図である。金属板1に絶縁接着材層2を
介して金属箔3が積層された構造を有する。絶縁接着剤
層2と金属箔3の積層は、一つの面に限定されることな
く、両面にあっても良い。又、接着剤層2及び金属箔3
の積層は、金属板1の全面にあっても、又、一部のみで
あっても構わない。
FIG. 1 is a schematic diagram showing an example of the metal-based circuit board of the present invention. It has a structure in which a metal foil 3 is laminated on a metal plate 1 via an insulating adhesive layer 2. The lamination of the insulating adhesive layer 2 and the metal foil 3 is not limited to one side, but may be on both sides. The adhesive layer 2 and the metal foil 3
May be provided on the entire surface of the metal plate 1 or only on a part thereof.

【0016】ここで金属板1には、板厚0.5〜3.0mm程
度のアルミニウム、アルミニウム合金、銅、鉄、ステン
レス系合金及びインバー系多層金属等が用いられる。
Here, the metal plate 1 is made of aluminum, aluminum alloy, copper, iron, stainless alloy, invar-based multi-layer metal or the like having a thickness of about 0.5 to 3.0 mm.

【0017】絶縁接着材層2は、酸化アルニミウムの他
にいろいろな無機物の混合物を、エポキシ樹脂に配合し
て、金属板に塗布し、更に、金属箔を張り付けて層状と
した後に、硬化させてたものが一般的であるが、特に、
製法を限定する必要はない。
The insulating adhesive layer 2 is prepared by mixing a mixture of various inorganic substances in addition to aluminum oxide into an epoxy resin, applying the mixture to a metal plate, further applying a metal foil to form a layer, and then curing. Are common, but in particular,
There is no need to limit the manufacturing method.

【0018】絶縁接着材層2を形成する無機物について
は、従来の酸化アルミニウム(比誘電率9.0、熱伝導率0.
07〜0.09cal/cm・sec・℃)よりも比誘電率が低く、熱伝導
性の高い物質が選択される。この様な物質として、窒化
ホウ素、酸化ケイ素、ダイアモンド、酸化ベリリウム、
窒化アルミニウム等があげられるが、経済性と安全性を
考慮すると酸化ケイ素、窒化ホウ素、窒化アルミニウム
が工業的に好ましい。
The inorganic material forming the insulating adhesive layer 2 is made of conventional aluminum oxide (relative permittivity 9.0, thermal conductivity 0.
(07-0.09 cal / cm · sec · ° C), a substance having a low relative dielectric constant and a high thermal conductivity is selected. Such materials include boron nitride, silicon oxide, diamond, beryllium oxide,
Aluminum nitride and the like can be mentioned, but silicon oxide, boron nitride, and aluminum nitride are industrially preferable in consideration of economy and safety.

【0019】これらの無機物は、以下では混合して得る
場合について例示するが、これに限定されるものではな
く、これらの混合物を予め焼結体となしこれを粉砕した
ものであっても良い。又、粒子の大きさについては、15
μm程度以下のものであれば良く、その粒子の形状につ
いては、樹脂に高充填する為に、球形に近いものが好ま
しい。更に、酸化ケイ素に関しては熱伝導性に優れる結
晶質の酸化ケイ素が、窒化ホウ素に関しても結晶性が発
達しているものが好ましい。
In the following, examples of the case where these inorganic substances are obtained by mixing will be described. However, the present invention is not limited to this, and the mixture may be formed into a sintered body in advance and ground. Regarding the particle size, 15
It is sufficient that the particles have a size of about μm or less, and the shape of the particles is preferably close to a sphere in order to highly fill the resin. Further, it is preferable that the silicon oxide is a crystalline silicon oxide having excellent thermal conductivity, and the boron nitride is also a crystal having a developed crystallinity.

【0020】本発明でいう樹脂とは、エポキシ樹脂で、
このうち、ビスフェノールA型エポキシ樹脂、ビスフェ
ノールF型エポキシ樹脂が低粘度であり、無機物の高充
填に適しており、好ましい。
The resin referred to in the present invention is an epoxy resin ,
Among them, bisphenol A type epoxy resin and bisphenol F type epoxy resin have a low viscosity, are suitable for high filling of inorganic substances, and are preferable.

【0021】本発明の目的を達成する為に本発明者ら
は、酸化アルミニウムに前記の無機物の1種以上を混合
してゆくこと、及び、上記の無機物の中から選ばれた2
種以上の無機物を混合してゆくことを実験的に検討し、
本発明に至ったものである。
In order to achieve the object of the present invention, the present inventors mixed aluminum oxide with one or more of the above-mentioned inorganic substances, and selected two or more inorganic substances from the above-mentioned inorganic substances.
Experimentally studying the mixing of more than one kind of inorganic substance,
This has led to the present invention.

【0022】まず、酸化アルミニウムに無機物を混合す
る場合、酸化アルミニウムが酸化アルミニウムと無機物
との混合物中の80容積%を越える場合には、得られる金
属ベース回路基板の特性は、従来の酸化アルミニウムを
単独でもちいた金属ベース回路基板の特性と大差なくな
るので、又、1容積%未満では実質的に酸化アルミニウ
ムを添加していない公知の金属ベース回路基板と同じと
なり、酸化アルミニウムの場合に得られる低熱抵抗性が
発揮しにくくなる。無機物については、先に述べた理由
により、酸化ケイ素、窒化ホウ素、窒化アルミニウムが
好ましい。
First, when an inorganic substance is mixed with aluminum oxide, and when aluminum oxide exceeds 80% by volume of the mixture of aluminum oxide and inorganic substance, the characteristics of the obtained metal base circuit board are the same as those of conventional aluminum oxide. Since there is no significant difference from the characteristics of the metal base circuit board used alone, if it is less than 1% by volume, it is the same as a known metal base circuit board to which aluminum oxide is not substantially added, and the low heat obtained in the case of aluminum oxide is obtained. Resistance becomes difficult to exert. As the inorganic substance, silicon oxide, boron nitride, and aluminum nitride are preferable for the reasons described above.

【0023】つぎに、前記の無機物の中から2種以上を
選択し配合する場合については、窒化ホウ素と酸化ケイ
素とを組み合わせ、しかも、窒化ホウ素が両者を合わせ
た全体の30容積%以上80容積%以下の場合に所望の特性
の金属ベース回路基板が得られるということを実験的に
見いだし、本発明に至ったものである。
Next, when two or more inorganic materials are selected and blended, boron nitride and silicon oxide are combined, and boron nitride is used in an amount of 30% by volume or more and 80% by volume. %, It has been experimentally found that a metal-based circuit board having desired characteristics can be obtained, and the present invention has been achieved.

【0024】窒化ホウ素と酸化ケイ素の組み合わせの場
合に好結果を得た理由は、明確でないが、窒化ホウ素の
配合割合が30容積%未満では、得られる金属ベース回路
基板の比誘電率は所望のものが得られるけれど熱抵抗は
0.6℃/W以下のものが得られない。また、窒化ホウ素の
配合割合が80容積%を越える場合には、窒化ホウ素の粒
子が偏平の為か、時として、耐電圧特性の低い金属ベー
ス回路基板しか得られなくなることがあり、実用的でな
い。
It is not clear why the combination of boron nitride and silicon oxide obtained a good result, but if the compounding ratio of boron nitride is less than 30% by volume, the relative permittivity of the obtained metal-based circuit board is not as high as desired. You get something, but the thermal resistance is
Nothing less than 0.6 ° C / W can be obtained. If the boron nitride content is more than 80% by volume, the boron nitride particles may be flattened, or sometimes only a metal-based circuit board with low withstand voltage characteristics may be obtained, which is not practical. .

【0025】上記の酸化アルミニウムと無機物、或い
は、無機物同士の混合物は、前記のエポキシ樹脂に50
容積%以上80容積%以下配合される。50容積%未満
の配合割合では、エポキシ樹脂の熱伝導率が向上せず所
望の熱抵抗を有する金属ベース回路基板が得られない
し、80容積%を越える場合には、混合時にエポキシ
脂の粘度が上がり気泡を巻き込み易くなるので耐絶縁破
壊等の電気的性質が劣化した金属ベース回路基板しか得
られなくなる。
The above-mentioned aluminum oxide and an inorganic substance or a mixture of inorganic substances are added to the above-mentioned epoxy resin by 50%.
It is blended in an amount of at least 80% by volume. The mixing ratio of less than 50 volume%, do not metal base circuit board having a desired thermal resistance without thermal conductivity of the epoxy resin is improved is obtained when more than 80 volume percent, epoxy resin in mixing <br / > Since the viscosity of the fat increases and bubbles are easily entrained, only a metal-based circuit board having deteriorated electric properties such as dielectric breakdown can be obtained.

【0026】配合時に、エポキシ樹脂と酸化アルミニウ
ム或いは無機物との界面の接着性を高める為に、シリコ
ーンカップリング剤、チタネートカップリング剤、シリ
ル化剤等の表面処理剤を添加してもよい。或いは、前記
の目的のために、混合に先立ち、酸化アルミニウムや無
機物の表面を処理することもできる
At the time of compounding, a surface treatment agent such as a silicone coupling agent, a titanate coupling agent, or a silylating agent may be added in order to enhance the adhesiveness at the interface between the epoxy resin and aluminum oxide or an inorganic substance. Alternatively, the surface of aluminum oxide or an inorganic substance can be treated prior to mixing for the purpose described above.

【0027】絶縁接着剤層2の厚みとしては20μm以上2
00μm以下が好ましい。絶縁接着材層の厚みが20μm未
満の場合には、得られる金属ベース回路基板の静電容量
が大きくなるし、200μmを越える場合には、熱抵抗が
大きくなるので、所望の特性の金属ベース回路基板が得
られなくなる。実用的には、特に、80μm以上200μm
以下の範囲が好ましい。
The thickness of the insulating adhesive layer 2 is 20 μm or more and 2
00 μm or less is preferable. When the thickness of the insulating adhesive layer is less than 20 μm, the capacitance of the obtained metal-based circuit board increases, and when it exceeds 200 μm, the thermal resistance increases. The substrate cannot be obtained. Practically, in particular, 80 μm or more and 200 μm
The following ranges are preferred.

【0028】本発明に用いる金属箔3は、導体回路用銅
箔、複合箔又は銅、アルミニウム、ニッケル等の金属を
2種類以上含む合金又は前記金属を使用したクラッド箔
等の汎用のものが用いられる。その厚みは、5μmから1
mmである。又、ワイヤーボンディング特性を付与する
ためにニッケルメッキ、ニッケル−金メッキを金属箔3
上に施しても構わない。
The metal foil 3 used in the present invention may be a copper foil for a conductor circuit, a composite foil, or a metal such as copper, aluminum, nickel or the like.
A general-purpose material such as an alloy containing two or more kinds or a clad foil using the metal is used. Its thickness ranges from 5 μm to 1
mm. Nickel plating and nickel-gold plating are applied to the metal foil 3 to impart wire bonding characteristics.
It may be applied on top.

【0029】[0029]

【実施例】以下、実施例について具体的に説明する。 (実施例1)酸化アルミニウム(昭和電工(株)製、AS3
0)75容積%に結晶性酸化ケイ素(龍森(株)、クリス
タライト)を25容積%配合し、この混合物をビスフェノ
ールF型エポキシ樹脂に80容積%配合、混合して絶縁接
着材とした。次に、大きさが640mm×640mmで厚みが
1.5mmのアルミニウム板の上に、前記の絶縁接着材を
硬化後の厚さが145μmになるように塗布し、更に、厚
さ35μmの銅箔を接着し、硬化させて金属ベース回路基
板を作製した。この金属ベース回路基板を用いて、以下
に示す方法で、熱抵抗の測定、1cm2当たりの静電容量の
測定、更に、トランジスターを搭載してモジュールを作
成し、V-t特性の測定を行い平均破壊時間とその間のト
ランジスターの誤動作の有無を調べた。その結果、表1
に記載したように、熱抵抗は0.43℃/W、静電容量は49.
0pF/cm2であり、トランジスター搭載時の平均寿命は1万
時間を越えていて、しかも、トランジスターの誤動作は
認められず、耐ノイズ性が向上していた。
EXAMPLES Examples will be specifically described below. (Example 1) Aluminum oxide (AS3, manufactured by Showa Denko KK)
0) 25 vol% of crystalline silicon oxide (Tatsumori Co., Ltd., Crystallite) was blended with 75 vol%, and this mixture was blended with bisphenol F type epoxy resin at 80 vol% and mixed to obtain an insulating adhesive. Next, the size is 640mm x 640mm and the thickness is
On a 1.5 mm aluminum plate, apply the above insulating adhesive so that the thickness after curing becomes 145 μm, and then bond a copper foil with a thickness of 35 μm and cure to produce a metal-based circuit board. did. Using this metal-based circuit board, measure the thermal resistance, measure the capacitance per 1 cm 2 , create a module with a transistor mounted, measure the Vt characteristics, and measure the average destruction by the methods shown below. The time and the presence or absence of a malfunction of the transistor during that time were examined. As a result, Table 1
The thermal resistance is 0.43 ° C / W and the capacitance is 49.
It was 0 pF / cm 2 , the average lifetime when the transistor was mounted exceeded 10,000 hours, no malfunction of the transistor was observed, and the noise resistance was improved.

【0030】<熱抵抗の測定>金属ベース回路基板よ
り、大きさ30mm×30mmの部分を切り出し、中央に位
置する金属箔をエッチングして10mm×15mmの大きさ
のパッド部を形成し、次に、このパッド部に、トランジ
スター(TO220、(株)東芝製)をはんだ付けする。
金属板のトランジスターを搭載していない面を冷却しつ
つ、トランジスターに100Wを通電し、トランジスター
の温度を測定する。この時のトランジスター温度と冷却
部金属板の温度の差、並びに、トランジスターへの付加
電力より熱抵抗を算出する。
<Measurement of Thermal Resistance> A 30 mm × 30 mm portion is cut out from a metal base circuit board, and a metal foil located at the center is etched to form a pad portion having a size of 10 mm × 15 mm. Then, a transistor (TO220, manufactured by Toshiba Corporation) is soldered to this pad portion.
While cooling the surface of the metal plate on which the transistor is not mounted, 100 W is supplied to the transistor, and the temperature of the transistor is measured. At this time, the thermal resistance is calculated from the difference between the transistor temperature and the temperature of the cooling section metal plate, and the additional power to the transistor.

【0031】<静電容量の測定>JIS C6481に基づき、
測定周波数100kHz、測定温度25℃で行い、結果は、1cm2
当たりに換算する。
<Measurement of capacitance> Based on JIS C6481,
Measurement frequency 100kHz, performed at a measurement temperature of 25 ° C., the results, 1 cm 2
Convert to per hit.

【0032】<V-t特性の測定>大きさ640mm×640m
mの金属ベース回路基板について、中央部1箇所と各4角
の1箇所、計5箇所に、エッチング法により金属箔を除い
て直径20mmの円電極用パターンを作製した。次に、金
属板と前記円電極パターン部分にAC半波2kVの電圧を印
可し、絶縁破壊に至る時間を測定する。測定は、促進の
ために、125℃の温度下で行った。得られた5点のデータ
から、ワイブルプロット法により、平均寿命を算出す
る。
<Measurement of Vt Characteristics> Size 640 mm × 640 m
With respect to the metal base circuit board of m, a circular electrode pattern having a diameter of 20 mm was formed by etching at a total of five locations, one at the center and one at each of the four corners, excluding the metal foil. Next, a voltage of 2 kV AC half-wave is applied to the metal plate and the circular electrode pattern portion, and the time until dielectric breakdown is measured. The measurement was performed at a temperature of 125 ° C. for acceleration. From the obtained five data points, the average life is calculated by the Weibull plot method.

【0033】(実施例2〜15、比較例1〜5)無機物
の種類とその混合割合、その無機物の混合物をエポキシ
樹脂へ混合する割合、更に、絶縁接着材層の厚みをいろ
いろ変えた以外は、実施例1と同様に操作していろいろ
な金属ベース回路基板とそれを用いたモジュールを作成
し、実施例1と同様にその特性を評価した。実施例の結
果を表1に、比較例の結果を表2に記載した。
(Examples 2 to 15 and Comparative Examples 1 to 5) The types of inorganic substances and their mixing ratios, the mixing ratio of the inorganic substances to the epoxy resin, and the thickness of the insulating adhesive layer were varied. Except for the change, various metal-based circuit boards and modules using the same were prepared in the same manner as in Example 1, and their characteristics were evaluated as in Example 1. Table 1 shows the results of the examples, and Table 2 shows the results of the comparative examples.

【0034】[0034]

【表1】 [Table 1]

【0035】[0035]

【表2】 [Table 2]

【0036】[0036]

【発明の効果】表1と表2との対比から、本発明品は、
電気的に信頼性が高く、長寿命であるので、より小型で
軽量の電子機器に適用できることが明かである。
According to the comparison between Table 1 and Table 2, the product of the present invention is:
It is evident that it is electrically reliable and has a long life, so that it can be applied to smaller and lighter electronic devices.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の金属ベース回路基板の一例を示した模
式図である。
FIG. 1 is a schematic view illustrating an example of a metal-based circuit board according to the present invention.

【符号の説明】[Explanation of symbols]

1 金属板 2 絶縁接着材層 3 金属箔 4 はんだ 5 セラミックスチップ部品 6 半導体素子 7 端子 DESCRIPTION OF SYMBOLS 1 Metal plate 2 Insulating adhesive layer 3 Metal foil 4 Solder 5 Ceramic chip component 6 Semiconductor element 7 Terminal

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H05K 1/05 B32B 7/02 104 B32B 7/12 B32B 15/08 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H05K 1/05 B32B 7/02 104 B32B 7/12 B32B 15/08

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】金属板の少なくとも一主面上にエポキシ樹
脂からなる絶縁接着材層を介して金属箔を設けた金属ベ
ース回路基板であって、熱抵抗が 0.6℃/W以下で
あり、かつ100kHzの静電容量が50pF/cm2
以下であることを特徴とする金属ベース回路基板。
1. A metal-based circuit board having a metal foil provided on at least one main surface of a metal plate via an insulating adhesive layer made of epoxy resin, and having a thermal resistance of 0.6 ° C./W or less. And the capacitance at 100 kHz is 50 pF / cm 2
A metal-based circuit board, characterized in that:
【請求項2】絶縁接着材層が、酸化アルミニウムを1容
積%以上80容積%以下含有する無機物を、50容積%
以上80容積%以下エポキシ樹脂に配合し硬化させてな
ることを特徴とする請求項1記載の金属ベース回路基
板。
2. The method according to claim 1, wherein the insulating adhesive layer contains 50% by volume of an inorganic substance containing 1% by volume to 80% by volume of aluminum oxide.
2. The metal-based circuit board according to claim 1, wherein the metal-based circuit board is mixed with an epoxy resin in an amount of at least 80% by volume and cured.
【請求項3】絶縁接着材層が、酸化アルミニウムを1容
積%以上80容積%以下含有し残部が酸化ケイ素、窒化
ホウ素、窒化アルミニウムの群から選ばれた1種以上か
らなる無機物を、50容積%以上80容積%以下エポキ
シ樹脂に配合し硬化させたことを特徴とする請求項2記
載の金属ベース回路基板。
3. An inorganic material comprising 1 to 80% by volume of aluminum oxide and the balance consisting of at least one selected from the group consisting of silicon oxide, boron nitride and aluminum nitride, wherein the insulating adhesive layer contains 50% by volume of an inorganic material. 3. The metal-based circuit board according to claim 2, wherein the metal-based circuit board is blended with an epoxy resin in an amount of at least 80% by volume and cured.
【請求項4】絶縁接着材層が、窒化ホウ素を30容積%
以上80容積%以下含有し残部が酸化ケイ素である無機
物を、50容積%以上80容積%以下エポキシ樹脂に配
合し硬化させてなることを特徴とする請求項1記載の金
属ベース回路基板。
4. The insulating adhesive layer contains 30% by volume of boron nitride.
2. The metal-based circuit board according to claim 1, wherein an inorganic substance containing at least 80% by volume and the balance being silicon oxide is mixed with an epoxy resin at at least 50% by volume and at most 80% by volume and cured.
【請求項5】請求項1記載の金属ベース回路基板を用い
てなるモジュール。
5. A module using the metal-based circuit board according to claim 1.
JP00803395A 1995-01-23 1995-01-23 Metal-based circuit board and module using the same Expired - Lifetime JP3255814B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP00803395A JP3255814B2 (en) 1995-01-23 1995-01-23 Metal-based circuit board and module using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00803395A JP3255814B2 (en) 1995-01-23 1995-01-23 Metal-based circuit board and module using the same

Publications (2)

Publication Number Publication Date
JPH08204301A JPH08204301A (en) 1996-08-09
JP3255814B2 true JP3255814B2 (en) 2002-02-12

Family

ID=11682031

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3255814B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1672969A1 (en) * 2003-10-07 2006-06-21 Neomax Materials Co., Ltd. Substrate and method for producing same
JP2013091179A (en) * 2011-10-24 2013-05-16 Sumitomo Chemical Co Ltd Laminate for circuit board and metal base circuit board
JP6074447B2 (en) * 2015-02-25 2017-02-01 デンカ株式会社 Epoxy resin composition, epoxy resin sheet, and metal base circuit board using the same
JP7135364B2 (en) * 2018-03-23 2022-09-13 三菱マテリアル株式会社 INSULATED CIRCUIT BOARD AND METHOD FOR MANUFACTURING INSULATED CIRCUIT BOARD

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
表面実装技術〔8〕1994,日刊工業新聞社、第39頁〜第44頁(平成6年8月1日発行)

Also Published As

Publication number Publication date
JPH08204301A (en) 1996-08-09

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