JP2000022289A - Resin composition for circuit board and circuit board using the same - Google Patents

Resin composition for circuit board and circuit board using the same

Info

Publication number
JP2000022289A
JP2000022289A JP10186232A JP18623298A JP2000022289A JP 2000022289 A JP2000022289 A JP 2000022289A JP 10186232 A JP10186232 A JP 10186232A JP 18623298 A JP18623298 A JP 18623298A JP 2000022289 A JP2000022289 A JP 2000022289A
Authority
JP
Japan
Prior art keywords
resin
boron nitride
circuit board
resin composition
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10186232A
Other languages
Japanese (ja)
Inventor
Toshiki Saito
俊樹 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP10186232A priority Critical patent/JP2000022289A/en
Publication of JP2000022289A publication Critical patent/JP2000022289A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a metal base circuit board for assuring practical pressure resistance and high productivity with a specific value or more of thermal conductivity and a specific value or less of a relative permittivity, by constituting a resin composition for a circuit board of a boron nitride aggregate particles obtained by bonding a baron nitride with a resin (A) and a resin (B). SOLUTION: High thermal conductivity is performed by adopting a structure in which boron nitride aggregate particles containing a small amount of a resin (A) exist in an island-like state in a resin (B) and using the particles as a heat transfer passage without disturbing flowability of the resin. As a result, a metal base circuit board having characteristics of low relative permittivity, high thermal conductivity so that the permittivity of 4.5 or less which has not been heretofore obtained and the conductivity is 8.0×103 cal/ cm.sec. deg.C or more, and a practical withstand voltage, can be obtained with good productivity. Since the circuit board uses the resin composition, excellent reliability for a long period is provided for advantageous in an industry.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、放熱性と電気絶縁
性に優れ、電気的信頼性が高い回路基板、特に、電子機
器、通信機、自動車等に用いられる金属ベース回路基
板、とそれに用いる絶縁組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board having excellent heat dissipation and electrical insulation properties and high electrical reliability, in particular, a metal-based circuit board used for electronic equipment, communication equipment, automobiles, and the like, and used therefor. The present invention relates to an insulating composition.

【0002】[0002]

【従来の技術】半導体素子等を搭載した回路基板がいろ
いろな用途で使用されているが、熱放散性に優れること
から、各種の電源用途に向けて金属ベース回路基板が使
用されている。この用途分野においては、IGBT素子
等の高パワー素子が搭載されるようになり、高耐電圧性
と高熱伝導性とを兼ね備えた金属ベース回路基板への要
求が強い。
2. Description of the Related Art Circuit boards on which semiconductor elements and the like are mounted have been used for various purposes. However, metal base circuit boards have been used for various power supply applications because of their excellent heat dissipation. In this application field, high power elements such as IGBT elements are mounted, and there is a strong demand for a metal-based circuit board having both high withstand voltage and high thermal conductivity.

【0003】金属ベース回路基板は、一般に、銅、アル
ミニウム、鋼或いはこれらの複合金属等からなる金属板
の主面上に、無機質充填材を含有する樹脂からなる絶縁
層を介して、銅、アルミニウム等の良導電性の物質から
なる回路を設けた構成を有していて、回路或いは絶縁層
上に半導体素子を始めとするいろいろな電気部品を実装
し、回路結線されてモジュールとなり、実用に供され
る。
[0003] Generally, a metal-based circuit board is made of copper, aluminum, or the like on a main surface of a metal plate made of copper, aluminum, steel, or a composite metal thereof via an insulating layer made of a resin containing an inorganic filler. It has a configuration in which a circuit made of a highly conductive material such as is provided, and various electric components such as a semiconductor element are mounted on the circuit or the insulating layer, and the circuit is connected to form a module, which is put into practical use. Is done.

【0004】モジュールが信頼性高く稼働するために
は、使用環境下において、各種電気部品或いは回路自身
から放熱される熱を速やかに放散し、前記電気部品の温
度上昇を防ぐことで電気部品を信頼性高く稼働させる必
要があるし、長期に渡る高い耐電圧性が要求される。ま
た、金属ベース回路基板は、前記構成に原因して、金属
板に漏れ電流に原因したノイズが発生し易いが、前記絶
縁層の比誘電率を、例えば6以下、好ましくは4.5以
下に、低くすることで、これを実用的に問題の無いレベ
ルにまでに防止することができる。
In order for a module to operate with high reliability, heat radiated from various electric components or the circuit itself is quickly dissipated in a use environment and the electric components are prevented from rising by preventing the temperature of the electric components from rising. It must be operated with high efficiency, and high withstand voltage for a long time is required. Further, the metal base circuit board is liable to generate noise due to the leakage current in the metal plate due to the above configuration, but the relative dielectric constant of the insulating layer is set to, for example, 6 or less, preferably 4.5 or less. By lowering it, this can be prevented to a practically acceptable level.

【0005】金属ベース回路基板においては、その長期
に渡る高信頼性を確保するために、耐電圧性と放熱性が
高く、更に低い比誘電率を有する絶縁層が望まれてい
て、これを改善することが産業上の重要な技術的課題と
なっている。
In order to ensure high reliability over a long period of time, an insulating layer having a high withstand voltage and a high heat dissipation and a low relative dielectric constant is desired for a metal-based circuit board. Is an important technical issue in industry.

【0006】従来の金属ベース回路基板においては、絶
縁層が、酸化アルミニウム等の無機系フィラーを高充填
した樹脂から形成されていて、その熱伝導率は8.0×
10 -3cal/cm・sec・℃未満であり、また比誘
電率は7.0〜8.0であった。この例として、特開平
2−286768号公報に、特定の粒子径の無機充填材
を用いることにより、無機充填材を高充填することがで
き、熱伝導率が高い回路基板用絶縁接着剤組成物が得ら
れ、その接着剤組成物を介して金属基板と導電箔とを積
層した回路基板が開示されている。
In conventional metal-based circuit boards,
Edge layer is highly filled with inorganic filler such as aluminum oxide
It has a thermal conductivity of 8.0 ×
10 -3cal / cm · sec · ° C or less
The electric conductivity was 7.0 to 8.0. As an example of this,
JP-A-2-286768 discloses an inorganic filler having a specific particle size.
By using, the inorganic filler can be highly filled.
High thermal conductivity, resulting in an insulating adhesive composition for circuit boards.
And the metal substrate and the conductive foil are laminated via the adhesive composition.
A layered circuit board is disclosed.

【0007】又、特開平7−320538号公報には、
比誘電率の低い回路基板を得ることを目的に、比誘電率
の低い窒化硼素をエポキシ樹脂等の樹脂にそのまま或い
は表面処理剤等とともに添加した金属ベース回路基板が
開示されている。
Further, Japanese Patent Application Laid-Open No. Hei 7-320538 discloses that
For the purpose of obtaining a circuit board having a low relative dielectric constant, a metal-based circuit board in which boron nitride having a low relative dielectric constant is added to a resin such as an epoxy resin as it is or together with a surface treatment agent or the like is disclosed.

【0008】表面処理剤を添加しない場合には、窒化硼
素の充填割合が30体積%程度以上になると急激に窒化
硼素含有樹脂組成物の粘度が急激に上昇してしまい、後
工程の金属板上への樹脂組成物の塗布が容易でなくなる
こと、又、窒化硼素の鱗片状粒子が塗布層内で平面的に
配向し、その結果熱伝導率が低い回路基板しか得られな
いこと等の問題が生じていた。そのため、比誘電率は
4.5以下であるが、熱伝導率は3.0×10-3cal
/cm・sec・℃程度の特性を有する絶縁材料組成物
しか得られていない。
[0008] When the surface treatment agent is not added, the viscosity of the boron nitride-containing resin composition sharply increases when the filling ratio of boron nitride is about 30% by volume or more. In addition, it is difficult to apply the resin composition to the coating layer, and the flake-like particles of boron nitride are planarly oriented in the coating layer, so that only a circuit board having low thermal conductivity can be obtained. Had occurred. Therefore, the relative dielectric constant is 4.5 or less, but the thermal conductivity is 3.0 × 10 −3 cal.
Only an insulating material composition having a characteristic of about / cm · sec · ° C. has been obtained.

【0009】一方、表面処理剤を添加することで前記問
題点は改善され、低比誘電率で高熱伝導率の絶縁材組成
物をえることができるものの、これらのものは窒化硼素
を樹脂中に充分に混合、分散化することが容易でなく、
均質な樹脂組成物を得るのに多大の時間を要し、その結
果生産性が充分でないという問題点があった。
On the other hand, by adding a surface treatment agent, the above problem can be solved, and an insulating material composition having a low relative dielectric constant and a high thermal conductivity can be obtained. However, these materials contain boron nitride in a resin. It is not easy to mix and disperse well,
It takes a lot of time to obtain a homogeneous resin composition, and as a result, there is a problem that productivity is not sufficient.

【0010】比誘電率が4.5以下で、熱伝導率が8.
0×10-3cal/cm・sec・℃以上の低比誘電率
と高熱伝導率との両特性を満足し、耐電圧に優れ、回路
基板を生産性高く、実用的に提供できる金属ベース回路
基板と、それに用いる絶縁材用の樹脂組成物が要望され
ている。
[0010] The relative dielectric constant is 4.5 or less, and the thermal conductivity is 8.
A metal-based circuit that satisfies both characteristics of a low dielectric constant of 0 × 10 −3 cal / cm · sec · ° C. or more and a high thermal conductivity, has excellent withstand voltage, has high productivity of a circuit board, and can be provided practically. There is a demand for a resin composition for a substrate and an insulating material used for the substrate.

【0011】[0011]

【発明が解決しようとする課題】本発明は、上記従来技
術の状況に鑑みて検討した結果なされたものであり、耐
電圧性、放熱性に優れ、比誘電率が低い回路基板用絶縁
組成物を提供するとともにこれを用いた長期の信頼性に
優れる金属ベース回路基板を生産性高く提供することを
目的としている。より具体的には、熱伝導率が8.0×
10-3cal/cm・sec・℃以上であり、しかも比
誘電率が4.5以下の両者の特性を満足し、実用的な耐
電圧性と高い生産性が確保できる回路基板用絶縁材とそ
れを用いた金属ベース回路基板を提供することを目的と
している。
DISCLOSURE OF THE INVENTION The present invention has been made in view of the above-mentioned state of the art, and is an insulating composition for a circuit board having excellent withstand voltage and heat radiation and a low relative dielectric constant. It is an object of the present invention to provide a metal-based circuit board having high reliability over a long period of time with high productivity. More specifically, the thermal conductivity is 8.0 ×
An insulating material for a circuit board that satisfies both characteristics of 10 −3 cal / cm · sec · ° C. or more and a relative dielectric constant of 4.5 or less and that can secure practical voltage resistance and high productivity. An object of the present invention is to provide a metal-based circuit board using the same.

【0012】[0012]

【課題を解決するための手段】本発明は、窒化硼素が樹
脂(A)で結合されている窒化硼素凝集粒子と樹脂
(B)とからなることを特徴とする回路基板用樹脂組成
物であり、好ましくは、前記樹脂(B)に窒化硼素が分
散されていることを特徴とする回路基板用樹脂組成物で
ある。
SUMMARY OF THE INVENTION The present invention is a resin composition for a circuit board, comprising boron nitride aggregated particles in which boron nitride is bound by a resin (A) and a resin (B). Preferably, there is provided a resin composition for a circuit board, wherein boron nitride is dispersed in the resin (B).

【0013】又、本発明は、樹脂(A)で結合された窒
化硼素凝集粒子を構成する窒化硼素或いは樹脂(B)に
分散されている窒化硼素の少なくとも一方が、平均粒子
径が0.1μm〜20μmの窒化硼素であり、樹脂
(A)がエポキシ樹脂からなり、樹脂(B)がエポキシ
樹脂からなることを特徴とする前記の回路基板用樹脂組
成物である。
Further, according to the present invention, at least one of boron nitride forming the boron nitride aggregated particles bonded by the resin (A) and boron nitride dispersed in the resin (B) has an average particle diameter of 0.1 μm. The resin composition for a circuit board according to claim 1, wherein the resin composition is boron nitride having a thickness of about 20 μm, wherein the resin (A) is made of an epoxy resin and the resin (B) is made of an epoxy resin.

【0014】更に、本発明の好ましい実施態様として、
窒化硼素の含有率が樹脂組成物全量に対して30〜75
体積%であることを特徴とする前記の回路基板用樹脂組
成物である。
Further, in a preferred embodiment of the present invention,
The content of boron nitride is 30 to 75 with respect to the total amount of the resin composition.
% By volume.

【0015】加えて、本発明は、前記の樹脂組成物を用
いてなることを特徴とする回路基板である。
In addition, the present invention is a circuit board characterized by using the above resin composition.

【0016】[0016]

【発明の実施の形態】本発明は、上記従来技術の状況に
鑑みて検討した結果なされたものである。本発明者の検
討によれば、窒化硼素は一般的に数〜数百μmの粒子か
ら構成されているが、その粒子は窒化硼素の結晶構造が
六方晶であることが原因して、鱗片状(或いは板状)の
形状を有しているので、樹脂中への充填性が上がらない
し、又、後工程での粒子の配向を生じやすい。しかし、
本発明者らは、鱗片状の窒化硼素に少量の樹脂を添加
し、充分に混合することで、窒化硼素の個々の粒子が配
向性を持たない凝集粒子を構成させ、これを他の樹脂或
いは前記樹脂に混合分散するときに、表面処理剤等の格
別の添加物を用いることなく樹脂に窒化硼素を混合する
ことが容易となり、しかも窒化硼素粒子が配向しにくく
することができ、その結果、高熱伝導率の回路基板を容
易に得ることができるという知見を得て、本発明に至っ
たものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention has been made in consideration of the above-mentioned prior art. According to the study of the present inventor, boron nitride is generally composed of particles of several to several hundred μm, and the particles are scaly due to the crystal structure of boron nitride being hexagonal. Since it has a (or plate-like) shape, the filling property into the resin does not increase, and the particles are likely to be oriented in a later step. But,
The present inventors have added a small amount of resin to flaky boron nitride and mixed well to form individual particles of boron nitride into agglomerated particles having no orientation. When mixing and dispersing in the resin, it becomes easy to mix boron nitride in the resin without using a special additive such as a surface treatment agent, and the boron nitride particles can be hardly oriented, and as a result, The inventors have found that a circuit board having high thermal conductivity can be easily obtained, and have reached the present invention.

【0017】即ち、本発明は、窒化硼素が樹脂(A)で
結合されている窒化硼素凝集粒子と樹脂(B)とからな
ることを特徴とする回路基板用樹脂組成物であり、前記
構成を採用するときに、低比誘電率でしかも高熱伝導
率、具体的には、比誘電率が4.5以下であって、しか
も熱伝導率が8.0×10-3cal/cm・sec・℃
以上である金属ベース回路基板を容易に安定して、従っ
て生産性高く得ることができるという効果を有する。
That is, the present invention relates to a resin composition for a circuit board, comprising boron nitride aggregated particles in which boron nitride is bonded with a resin (A) and a resin (B). When employed, the dielectric constant is low and the thermal conductivity is high, specifically, the dielectric constant is 4.5 or less, and the thermal conductivity is 8.0 × 10 −3 cal / cm · sec · ° C
There is an effect that the above-mentioned metal-based circuit board can be easily and stably obtained, and thus can be obtained with high productivity.

【0018】本発明において、窒化硼素凝集粒子は、鱗
片状(或いは板状)の窒化硼素粒子が配向することなく
樹脂(A)で結合されて構成され、該窒化硼素凝集粒子
が樹脂(B)中に分散していることを本質的とする。前
記窒化硼素凝集粒子は、例えば、樹脂組成物を任意の断
面について走査型電子顕微鏡で観察するときに、樹脂
(B)のマトリックス内に、離散或いは隣接し合って存
在する島状領域を形成している。そして、その内部には
樹脂(A)が存在している。
In the present invention, the agglomerated boron nitride particles are composed of scaly (or plate-like) boron nitride particles bonded by the resin (A) without being oriented, and the boron nitride agglomerated particles are formed of the resin (B). The fact that it is dispersed inside is essential. The boron nitride agglomerated particles form discrete or adjacent island-like regions in the matrix of the resin (B) when, for example, observing the resin composition in an arbitrary cross section with a scanning electron microscope. ing. Then, the resin (A) is present therein.

【0019】また、窒化硼素凝集粒子内の窒化硼素粒子
の配向性に関しては、窒化硼素凝集粒子の断面部につい
て走査型顕微鏡を用いた観察を行うのみで定性的に、容
易に判断できるが、より定量的には、例えば、前記観察
写真の窒化硼素凝集粒子内の窒化硼素個々の粒子約50
個以上についてその配向方向(鱗片或いは平板と平行方
向)を調べ、最も数の多い方向の粒子個数(X)と、前
記方向と垂直方向に配向している粒子個数(Y)との比
率(X/Y)を調べれば良い。本発明において、前記比
率は3以下であれば良い。
The orientation of the boron nitride particles in the boron nitride aggregated particles can be determined qualitatively and easily by merely observing the cross section of the boron nitride aggregated particles using a scanning microscope. Quantitatively, for example, about 50% of individual particles of boron nitride in the boron nitride agglomerated particles of the observation photograph are taken.
The orientation direction (the direction parallel to the scale or the flat plate) of at least the number of particles is examined, and the ratio (X) of the number of particles (X) in the direction with the largest number and the number of particles (Y) oriented perpendicular to the direction is determined / Y). In the present invention, the ratio may be 3 or less.

【0020】本発明に用いる窒化硼素としては、上述の
とおりに鱗片状或いは板状の粒子からなるもので、その
平均粒子径が0.1μm〜20μmであることが好まし
い。平均粒子径が0.1μm未満の窒化硼素は、粉末を
構成する粒子のほとんどが小さく、粒子形状が鱗片状或
いは平板状〜粒状となり、本発明を適用する必要性がな
い。平均粒子径が20μmを越える場合には、配向性の
小さな窒化硼素凝集粒子を得ることが困難となる。0.
2μm〜15μmが好ましく、0.5μm〜10μmが
一層好ましい範囲である。
The boron nitride used in the present invention comprises flaky or plate-like particles as described above, and preferably has an average particle diameter of 0.1 μm to 20 μm. In boron nitride having an average particle diameter of less than 0.1 μm, most of the particles constituting the powder are small, and the particle shape is scaly or flat to granular, and there is no need to apply the present invention. When the average particle size exceeds 20 μm, it becomes difficult to obtain boron nitride aggregated particles having a small orientation. 0.
2 μm to 15 μm is preferable, and 0.5 μm to 10 μm is a more preferable range.

【0021】又、本発明の窒化硼素の結晶性について
は、結晶性が高く、特に黒鉛化指数が3.5以下のもの
が、より熱伝導性に優れる金属ベース回路基板が得やす
いことから好ましい。ここで、黒鉛化指数とは、X線回
折による(100)、(101)、(102)面の回折
強度(ピーク面積)より、次式で算出したものであり、
黒鉛化指数が小さいほど窒化硼素の結晶性が高い。 黒鉛化指数=((100)面積+(101)面積)/
((102)面積)
Regarding the crystallinity of the boron nitride of the present invention, those having high crystallinity, particularly those having a graphitization index of 3.5 or less are preferable because a metal-based circuit board having more excellent thermal conductivity can be easily obtained. . Here, the graphitization index is calculated from the diffraction intensity (peak area) of the (100), (101), and (102) planes by X-ray diffraction using the following equation.
The smaller the graphitization index, the higher the crystallinity of boron nitride. Graphitization index = ((100) area + (101) area) /
((102) area)

【0022】本発明に用いられる樹脂(A)としては、
エポキシ樹脂、シリコーン樹脂、BTレジン、ポリイミ
ド樹脂等が用いられ、樹脂(B)に添加される前に硬化
或いはゲル化されていることが好ましい。また、前記樹
脂のうちエポキシ樹脂が窒化硼素との接着性や物理的な
特性の点で好ましく、中でもビスフェノールA型エポキ
シ樹脂、ビスフェノールF型エポキシ樹脂が低粘度であ
り、窒化硼素粒子が高充填された窒化硼素凝集粒子を得
られるので好ましい。又、樹脂(B)としては、エポキ
シ樹脂、シリコーン樹脂、BTレジン、ポリイミド樹脂
等が用いられるが、高熱伝導率を達成する目的で、前記
樹脂(A)と結合力の強いものが好ましく、樹脂(A)
と同一のものが更に好ましい。
The resin (A) used in the present invention includes:
An epoxy resin, a silicone resin, a BT resin, a polyimide resin, or the like is used, and is preferably cured or gelled before being added to the resin (B). In addition, among the above resins, epoxy resins are preferable in terms of adhesion to boron nitride and physical characteristics, and among them, bisphenol A type epoxy resin and bisphenol F type epoxy resin have low viscosity, and are highly filled with boron nitride particles. It is preferable because the obtained boron nitride aggregated particles can be obtained. As the resin (B), an epoxy resin, a silicone resin, a BT resin, a polyimide resin, or the like is used. For the purpose of achieving high thermal conductivity, a resin having a strong bonding force with the resin (A) is preferable. (A)
The same is more preferable.

【0023】又、本発明では、前記樹脂組成物におい
て、樹脂(B)に窒化硼素、アルミナ、シリカ、窒化珪
素、窒化アルミニウム等の無機質フィラーを分散させる
こともできる。上記構成を採用することで一層高い熱伝
導率を達成できる。前記無機質フィラーの多くは、樹脂
(B)への充填性を高めることを目的に、シリコーンカ
ップリング剤、チタネートカップリング剤、シリル化剤
等の表面処理剤にて処理を施されても良い。また、前記
無機質フィラーの中で、低比誘電率と高熱伝導率との両
方の特性を達成するために、窒化硼素を分散させること
が好ましい。樹脂(B)中に分散される窒化硼素に関し
ては、窒化硼素凝集粒子を構成する窒化硼素と同じもの
が用いることができるが、個々の窒化硼素粒子が樹脂
(B)中に分散していれば良いので、必ずしもこれに限
定されるものではない。
In the present invention, in the resin composition, an inorganic filler such as boron nitride, alumina, silica, silicon nitride, and aluminum nitride may be dispersed in the resin (B). By adopting the above configuration, a higher thermal conductivity can be achieved. Many of the inorganic fillers may be treated with a surface treatment agent such as a silicone coupling agent, a titanate coupling agent, or a silylating agent for the purpose of enhancing the filling property of the resin (B). In addition, it is preferable to disperse boron nitride in the inorganic filler in order to achieve both low dielectric constant and high thermal conductivity. As for the boron nitride dispersed in the resin (B), the same boron nitride as the boron nitride agglomerated particles can be used, provided that the individual boron nitride particles are dispersed in the resin (B). Because it is good, it is not necessarily limited to this.

【0024】本発明の樹脂組成物においては、少量の樹
脂(A)を含有する窒化硼素凝集粒子が、樹脂(B)中
に島状に存在している構造を採用することで、樹脂の流
動性を阻害することなく、しかも、前記窒化硼素凝集粒
子を熱の伝達路とさせることで高熱伝導率を達成するも
のである。それぞれの配合割合については、後で詳述す
るが、樹脂組成物全体に対する窒化硼素の含有率に関し
ては、30〜75体積%であることが好ましい。30体
積%未満では、樹脂組成物中で窒化硼素凝集粒子同士の
接触が不足し、熱伝導率が高くならないことがある。7
5体積%を越えるときには、窒化硼素凝集粒子が樹脂
(B)に混合される際に破壊されて粘度上昇が著しくな
ることや高熱伝導率を達成できないことがある。好まし
い範囲としては50〜75体積%である。
In the resin composition of the present invention, by adopting a structure in which boron nitride aggregated particles containing a small amount of the resin (A) are present in the resin (B) in an island shape, the flow of the resin is improved. The high thermal conductivity is achieved by using the boron nitride aggregated particles as a heat transfer path without impairing the properties. Although the respective compounding ratios will be described in detail later, the content of boron nitride with respect to the entire resin composition is preferably 30 to 75% by volume. If the content is less than 30% by volume, contact between the aggregated boron nitride particles in the resin composition may be insufficient, and the thermal conductivity may not be increased. 7
If the content exceeds 5% by volume, the boron nitride aggregated particles may be broken when mixed with the resin (B), resulting in a significant increase in viscosity and inability to achieve high thermal conductivity. A preferred range is 50 to 75% by volume.

【0025】窒化硼素凝集粒子については、樹脂(A)
が窒化硼素粒子の間隙のみを埋めるように窒化硼素が3
5〜95体積%で残部樹脂(A)とすることが、後工程
で樹脂(B)と混合される際に窒化硼素凝集粒子の形態
を維持し易いことから好ましい。一方、樹脂(B)中の
無機質フィラーの配合量については、特に窒化硼素を用
いる場合、窒化硼素が50体積%以下であることが好ま
しい。
With respect to the boron nitride aggregated particles, the resin (A)
Is filled with boron nitride to fill only the gaps between the boron nitride particles.
It is preferable to make the residual resin (A) at 5 to 95% by volume because the form of the boron nitride aggregated particles is easily maintained when mixed with the resin (B) in a later step. On the other hand, the amount of the inorganic filler in the resin (B) is preferably 50% by volume or less, particularly when boron nitride is used.

【0026】本発明の樹脂組成物を得る方法としては、
窒化硼素粉末を用意しこれに所定量の樹脂(A)を添加
し、従来公知の造粒機を用いて造粒し、窒化硼素凝集粒
子とすればよいが、前記造粒機に替えて、ヘンシェルミ
キサー等の混合機を用いることもできる。窒化硼素凝集
粒子は、必要ならば、加熱等の適当な処理を行い樹脂
(A)を硬化或いはゲル化して、後工程における樹脂
(B)との混合で破壊されないようにする。次に、前記
操作で得られた窒化硼素凝集粒子と樹脂(B)とを所定
量配合し、例えば、万能混合機を用いて混合すること
で、通常の使用用途に適用することができる。
The method for obtaining the resin composition of the present invention includes:
A boron nitride powder is prepared, a predetermined amount of the resin (A) is added thereto, and the mixture is granulated using a conventionally known granulator to form boron nitride agglomerated particles. A mixer such as a Henschel mixer can also be used. If necessary, the boron nitride aggregated particles are subjected to an appropriate treatment such as heating to cure or gel the resin (A) so that the particles are not destroyed by mixing with the resin (B) in a later step. Next, a predetermined amount of the boron nitride aggregated particles obtained by the above operation and the resin (B) are blended and mixed using, for example, a universal mixer, so that it can be applied to ordinary use.

【0027】本発明は、前記の樹脂組成物を用いてなる
金属ベース回路基板であり、前記樹脂組成物の低比誘電
率でしかも高熱伝導率であるという特性から、長期に渡
る信頼性に優れ、しかも生産性に優れる金属ベース回路
基板である。金属ベース回路基板の絶縁層は前記の樹脂
組成物からなり、その厚みは、通常20〜500μmの
範囲で用いられる。
The present invention is a metal-based circuit board using the above resin composition, and has excellent reliability over a long period of time due to the characteristics of the resin composition having a low dielectric constant and a high thermal conductivity. Moreover, it is a metal-based circuit board excellent in productivity. The insulating layer of the metal base circuit board is made of the above resin composition, and the thickness thereof is usually used in the range of 20 to 500 μm.

【0028】本発明の金属ベース回路基板は、金属板上
の片面または両面に絶縁層と導体回路を各1層以上、繰
り返し積層された構造を有するものをいい、金属板とし
ては、良熱伝導性を有する、一般に肉厚が0.5〜3.
0mmであるアルミニウム、アルミニウム合金、銅、
鉄、ステンレス、インバー或いはこれらの複合金属等が
用いられる。
The metal base circuit board of the present invention has a structure in which one or more insulating layers and conductor circuits are repeatedly laminated on one or both sides of a metal plate, and the metal plate has good heat conductivity. 2. Generally, the thickness is 0.5-3.
0 mm aluminum, aluminum alloy, copper,
Iron, stainless steel, invar, or a composite metal thereof is used.

【0029】金属ベース回路基板の絶縁層上に形成され
る導体回路としては銅箔、複合箔または銅、アルミニウ
ム、ニッケル等の金属を2種類以上含む合金及びそれぞ
れの金属を使用したクラッド箔からなり、その厚みは5
μm〜1mmが一般的である。また、ワイヤーボンディ
ング特性等を付与するためニッケルメッキ、ニッケル−
金メッキを導体回路表面上に施していてもかまわない。
更に、これらの導体回路は、金属箔を絶縁層に搭載前或
いは搭載後にエッチングされ、所望形状に回路形成され
る。前記回路上には、抵抗、コンデンサー等のセラミッ
クスチップ部品および/またはダイオード、サイリスタ
ー、トランジスター等の半導体素子ならび端子が搭載さ
れていてもかまわない。
The conductive circuit formed on the insulating layer of the metal-based circuit board is made of a copper foil, a composite foil, an alloy containing two or more kinds of metals such as copper, aluminum, nickel and the like, and a clad foil using each metal. , Its thickness is 5
μm to 1 mm is common. In addition, nickel plating, nickel-
Gold plating may be applied on the surface of the conductor circuit.
Further, these conductor circuits are etched before or after mounting the metal foil on the insulating layer, and the circuits are formed into a desired shape. A ceramic chip component such as a resistor and a capacitor and / or a semiconductor element and a terminal such as a diode, a thyristor, and a transistor may be mounted on the circuit.

【0030】[0030]

【実施例】以下、実施例、比較例に基づいて、本発明を
更に詳細に説明する。
The present invention will be described below in more detail with reference to examples and comparative examples.

【0031】[実施例1]窒化硼素(電気化学工業
(株)製、GPS−2)とビスフェノールF型エポキシ
樹脂(油化シェル(株)製;エピコート807)とを体
積比95:5で混合し、ヘンシェルミキサーを用いて造
粒し平均径40μmの窒化硼素凝集粒子の粉末を得た。
Example 1 Boron nitride (GPS-2, manufactured by Denki Kagaku Kogyo Co., Ltd.) and bisphenol F type epoxy resin (Epicoat 807, manufactured by Yuka Shell Co., Ltd.) were mixed at a volume ratio of 95: 5. The resulting mixture was granulated using a Henschel mixer to obtain powder of aggregated boron nitride particles having an average diameter of 40 μm.

【0032】前記窒化硼素凝集粒子粉末をビスフェノー
ルF型エポキシ樹脂(油化シェル(株)製;エピコート
807)中に分散させ、アミン系の硬化材を加えた後の
窒化硼素粉の体積分率が55%となるように調整して、
樹脂組成物を得た。
The agglomerated boron nitride particles were dispersed in a bisphenol F type epoxy resin (manufactured by Yuka Shell Co., Ltd .; Epicoat 807), and the volume fraction of the boron nitride powder after adding an amine-based curing agent was determined. Adjust it to be 55%
A resin composition was obtained.

【0033】前記樹脂組成物を510mm×510mm
×1.5mmのアルミニウム板上に100μmの厚みと
なるように塗布し、さらに厚さが35μmの銅箔をラミ
ネート法により張り合わせて加熱硬化し、エッチングし
て所望の回路を形成し、金属ベース回路基板を作製し
た。この金属ベース回路基板について、耐電圧、比誘電
率、及び生産性を以下に示す方法で測定した。また、熱
伝導率については、別途、前記樹脂組成物より試片を作
成し、該試片について測定した。これらの結果を表1に
示した。
The above resin composition is 510 mm × 510 mm
Coating to a thickness of 100 μm on an aluminum plate of × 1.5 mm, copper foil with a thickness of 35 μm is laminated by a laminating method, heated and cured, and etched to form a desired circuit. A substrate was prepared. The withstand voltage, relative dielectric constant, and productivity of this metal-based circuit board were measured by the following methods. Moreover, about the thermal conductivity, a test piece was separately prepared from the resin composition, and the test piece was measured. The results are shown in Table 1.

【0034】[0034]

【表1】 [Table 1]

【0035】<樹脂層の熱伝導率の測定方法>厚さ2m
m×直径10mmの円盤形の試験片を用い、レーザーフ
ラッシュ法熱伝導率測定装置(理学電機工業(株)製
「LF/TCM−FA−8510B」)により、ATT
レンジ;20μV、サンプリングレート;1000μ
秒、フィルター;100Hzで測定した。
<Method of Measuring Thermal Conductivity of Resin Layer> 2 m thick
ATT was measured by a laser flash method thermal conductivity measuring device (“LF / TCM-FA-8510B” manufactured by Rigaku Denki Kogyo Co., Ltd.) using a disk-shaped test piece of mx 10 mm in diameter.
Range: 20μV, sampling rate: 1000μ
Seconds, filter; measured at 100 Hz.

【0036】<耐電圧の測定方法>エッチング法によ
り、金属ベース回路基板上に直径が20mmの円形電極
を作成し、JIS C 2110に規定された段階昇圧
法により、中心部の円形電極と他の円形電極との間の耐
電圧を測定した。
<Measurement Method of Withstanding Voltage> A circular electrode having a diameter of 20 mm was formed on a metal base circuit board by an etching method, and a circular electrode at the center and another circular electrode were formed by a step-up method specified in JIS C 2110. The withstand voltage between the electrodes was measured.

【0037】<比誘電率の測定方法>JIS C648
1に基づき、測定周波数100kHz、測定温度25℃
で行った。
<Measurement Method of Relative Dielectric Constant> JIS C648
1, measurement frequency 100 kHz, measurement temperature 25 ° C
I went in.

【0038】<生産性の評価方法>各々の製法で名刺サ
イズ(90mm×50mm)の基板10,000枚を製
造するのに要した時間で評価した。
<Productivity Evaluation Method> Evaluation was made based on the time required to produce 10,000 substrates of business card size (90 mm × 50 mm) in each production method.

【0039】[実施例2]窒化硼素凝集粒子粉末を得る
のにシリコーン樹脂(東レダウコーニングシリコーン
(株)製;SEI880)を用いたことこと以外は実施
例1と同一の操作をして得られた金属ベース回路基板に
ついて、耐電圧、比誘電率、及び生産性を、また樹脂硬
化体の熱伝導率を以下に示す方法で測定した。結果は表
1に示した。
Example 2 The same procedure as in Example 1 was performed except that a silicone resin (manufactured by Toray Dow Corning Silicone Co., Ltd .; SEI880) was used to obtain the boron nitride aggregated particle powder. The withstand voltage, relative dielectric constant, and productivity, and the thermal conductivity of the cured resin body were measured for the metal-based circuit board by the following methods. The results are shown in Table 1.

【0040】[実施例3]窒化硼素凝集粒子粉末を得る
のにポリイミド樹脂(三井東圧(株)製;LARC−T
PISEI880)を用いたこと以外は実施例1と同一
の操作をして得られた金属ベース回路基板について、耐
電圧、比誘電率、及び生産性を、また樹脂硬化体の熱伝
導率を以下に示す方法で測定した。結果は表1に示し
た。
[Example 3] A polyimide resin (manufactured by Mitsui Toatsu Co., Ltd .; LARC-T) was used to obtain boron nitride aggregated particles.
With respect to the metal-based circuit board obtained by performing the same operation as in Example 1 except that PISEI 880) was used, the withstand voltage, the relative dielectric constant, and the productivity, and the thermal conductivity of the cured resin body were as follows. It was measured by the method shown. The results are shown in Table 1.

【0041】[実施例4]アミン系の硬化材を加えた後
の窒化硼素粉の体積分率が75%となるように調整した
こと以外は実施例1と同一の操作をして得られた金属ベ
ース回路基板について耐電圧、比誘電率、及び生産性
を、また樹脂硬化体の熱伝導率を以下に示す方法で測定
した。結果は表1に示した。
Example 4 The same procedure as in Example 1 was carried out except that the volume fraction of the boron nitride powder after adding the amine-based curing agent was adjusted to be 75%. The withstand voltage, relative dielectric constant, and productivity of the metal-based circuit board, and the thermal conductivity of the cured resin were measured by the following methods. The results are shown in Table 1.

【0042】[実施例5]窒化硼素凝集粒子粉末を得る
のにシリコーン樹脂(東レダウコーニングシリコーン
(株)製;SEI880)としたこと以外は実施例1と
同一の操作をして得られた金属ベース回路基板について
耐電圧、比誘電率、及び生産性を、樹脂硬化体の熱伝導
率について以下に示す方法で測定した。結果は表1に示
した。
Example 5 A metal obtained by performing the same operation as in Example 1 except that a silicone resin (manufactured by Toray Dow Corning Silicone Co., Ltd .; SEI880) was used to obtain the boron nitride aggregated particle powder. Withstand voltage, relative dielectric constant, and productivity of the base circuit board were measured for the thermal conductivity of the cured resin by the following method. The results are shown in Table 1.

【0043】[実施例6]窒化硼素凝集粒子粉末を、予
め窒化硼素粉を31vol%分散させたビスフェノール
F型エポキシ樹脂(油化シェル(株)製;エピコート8
07)中に分散したこと以外は実施例1と同一の操作を
して得られた金属ベース回路基板について耐電圧、比誘
電率、及び生産性を、又、樹脂硬化体の熱伝導率を以下
に示す方法で測定した。結果は表1に示した。
Example 6 Boron nitride agglomerated particle powder was prepared by dispersing 31 vol% of boron nitride powder in advance in bisphenol F type epoxy resin (manufactured by Yuka Shell Co., Ltd .; Epicoat 8).
07), the withstand voltage, relative dielectric constant, and productivity of the metal-based circuit board obtained by performing the same operation as in Example 1 except that the resin was dispersed in The measurement was performed by the method shown in FIG. The results are shown in Table 1.

【0044】[比較例1]窒化硼素(電気化学工業
(株)製、GPS−2)をビスフェノールF型エポキシ
樹脂(油化シェル(株)製;エピコート807)中に分
散させ、アミン系の硬化剤を加えた後の窒化硼素粉の体
積分率が55%となるように調整した。このものを51
0mm×510mm×1.5mmのアルミニウム板上に
100μmの厚みとなるように塗布し、さらに厚さが3
5μmの銅箔をラミネート法により張り合わせて加熱硬
化して、金属ベース回路基板を作製した。この金属ベー
ス回路基板について耐電圧、比誘電率、及び生産性を、
また樹脂硬化体の熱伝導率を以下に示す方法で測定した
が、塗布時の粘度が極めて高く、しかも耐電圧、生産性
が不良であった。
Comparative Example 1 Boron nitride (GPS-2, manufactured by Denki Kagaku Kogyo Co., Ltd.) was dispersed in a bisphenol F-type epoxy resin (Epicoat 807, manufactured by Yuka Shell Co., Ltd.), and amine-based curing was performed. The volume fraction of the boron nitride powder after adding the agent was adjusted to be 55%. This one is 51
It is applied on a 0 mm × 510 mm × 1.5 mm aluminum plate so as to have a thickness of 100 μm.
A 5 μm copper foil was laminated by a laminating method and cured by heating to produce a metal-based circuit board. Withstand voltage, relative permittivity, and productivity of this metal-based circuit board,
The thermal conductivity of the cured resin was measured by the method described below. As a result, the viscosity at the time of coating was extremely high, and the withstand voltage and productivity were poor.

【0045】[0045]

【発明の効果】本発明の樹脂組成物においては、少量の
樹脂(A)を含有する窒化硼素凝集粒子が、樹脂(B)
中に島状に存在しているという構造を採っていることに
より、樹脂の流動性を阻害することなく、しかも、前記
窒化硼素凝集粒子を熱の伝達路とさせることで高熱伝導
率を達成することができ、その結果、低い比誘電率で高
い熱伝導率を有し、従来得られなかった比誘電率が4.
5以下であって、しかも熱伝導率が8.0×10-3ca
l/cm・sec・℃以上の特性を有していて、実用的
な耐電圧性を有する金属ベース回路基板を生産性良く提
供できるという効果を有する。
According to the resin composition of the present invention, the boron nitride aggregated particles containing a small amount of the resin (A) are mixed with the resin (B).
By adopting a structure in which it exists in an island shape, it does not hinder the fluidity of the resin, and achieves high thermal conductivity by using the boron nitride aggregated particles as a heat transfer path. As a result, it has a low relative dielectric constant and a high thermal conductivity, and has a relative dielectric constant not obtained conventionally of 4.
5 or less, and the thermal conductivity is 8.0 × 10 −3 ca
It has a characteristic of l / cm · sec · ° C. or higher, and has an effect that a metal-based circuit board having practical withstand voltage can be provided with high productivity.

【0046】又、本発明の金属ベース回路基板は、前記
の樹脂組成物を用いているので、長期の信頼性に優れ、
産業上有用である。
Further, since the metal-based circuit board of the present invention uses the above resin composition, it has excellent long-term reliability,
Industrially useful.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 窒化硼素が樹脂(A)で結合されている
窒化硼素凝集粒子と樹脂(B)とからなることを特徴と
する回路基板用樹脂組成物。
1. A resin composition for a circuit board, comprising a resin (B) and boron nitride aggregated particles in which boron nitride is bonded by a resin (A).
【請求項2】 樹脂(B)に窒化硼素が分散されている
ことを特徴とする請求項1記載の回路基板用樹脂組成
物。
2. The resin composition for a circuit board according to claim 1, wherein boron nitride is dispersed in the resin (B).
【請求項3】 樹脂(A)で結合された窒化硼素凝集粒
子を構成する窒化硼素或いは樹脂(B)に分散されてい
る窒化硼素の少なくとも一方が、平均粒子径が0.1μ
m〜20μmの窒化硼素であることを特徴とする請求項
1又は請求項2記載の回路基板用樹脂組成物。
3. An average particle diameter of at least one of boron nitride constituting the aggregated boron nitride particles bonded with the resin (A) or boron nitride dispersed in the resin (B) is 0.1 μm.
The resin composition for a circuit board according to claim 1, wherein the composition is boron nitride having a thickness of m to 20 μm.
【請求項4】 樹脂(A)がエポキシ樹脂からなること
を特徴とする請求項1、請求項2又は請求項3記載の回
路基板用樹脂組成物。
4. The resin composition for a circuit board according to claim 1, wherein the resin (A) comprises an epoxy resin.
【請求項5】 樹脂(B)がエポキシ樹脂からなること
を特徴とする請求項1、請求項2、請求項3又は請求項
4記載の回路基板用樹脂組成物。
5. The resin composition for a circuit board according to claim 1, wherein the resin (B) comprises an epoxy resin.
【請求項6】 窒化硼素の含有率が樹脂組成物全量に対
して30〜75体積%であることを特徴とする請求項
1、請求項2、請求項3、請求項4又は請求項5記載の
回路基板用樹脂組成物。
6. The resin composition according to claim 1, wherein the content of boron nitride is from 30 to 75% by volume based on the total amount of the resin composition. Resin composition for circuit boards.
【請求項7】 請求項1、請求項2、請求項3、請求項
4、請求項5又は請求項6記載の樹脂組成物を用いてな
ることを特徴とする回路基板。
7. A circuit board comprising the resin composition according to claim 1, 2, 3, 4, 5, or 6.
JP10186232A 1998-07-01 1998-07-01 Resin composition for circuit board and circuit board using the same Pending JP2000022289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10186232A JP2000022289A (en) 1998-07-01 1998-07-01 Resin composition for circuit board and circuit board using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10186232A JP2000022289A (en) 1998-07-01 1998-07-01 Resin composition for circuit board and circuit board using the same

Publications (1)

Publication Number Publication Date
JP2000022289A true JP2000022289A (en) 2000-01-21

Family

ID=16184675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10186232A Pending JP2000022289A (en) 1998-07-01 1998-07-01 Resin composition for circuit board and circuit board using the same

Country Status (1)

Country Link
JP (1) JP2000022289A (en)

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JP2008195850A (en) * 2007-02-14 2008-08-28 Nitto Denko Corp Method for producing resin molded article
JP2015193752A (en) * 2014-03-31 2015-11-05 三菱化学株式会社 Boron nitride particle, method for producing boron nitride particle, coating liquid for heat radiation sheet comprising the boron nitride particle, heat radiation sheet comprising the boron nitride particle, and power device apparatus
WO2015174023A1 (en) * 2014-05-15 2015-11-19 パナソニックIpマネジメント株式会社 Insulating thermally conductive resin composition
JP2016074546A (en) * 2014-10-02 2016-05-12 住友ベークライト株式会社 Granulated powder, resin composition for heat radiation, heat radiation sheet, semiconductor device, and heat radiation member
CN110234712A (en) * 2017-01-30 2019-09-13 积水化学工业株式会社 Resin material and laminated body
JP2020084154A (en) * 2018-11-30 2020-06-04 株式会社トクヤマ Resin molded body, resin composition and method for producing resin molded body
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JPH07320538A (en) * 1994-05-26 1995-12-08 Denki Kagaku Kogyo Kk Insulating material composition and circuit board and module using this insulating material composition
JPH09202663A (en) * 1996-01-24 1997-08-05 Denki Kagaku Kogyo Kk Melamine borate particle, its production and use thereof and production of hexagonal boron nitride powder

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH05155608A (en) * 1991-12-09 1993-06-22 Nikko Kyodo Co Ltd Production of boron nitride composite powder
JPH07320538A (en) * 1994-05-26 1995-12-08 Denki Kagaku Kogyo Kk Insulating material composition and circuit board and module using this insulating material composition
JPH09202663A (en) * 1996-01-24 1997-08-05 Denki Kagaku Kogyo Kk Melamine borate particle, its production and use thereof and production of hexagonal boron nitride powder

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JP2008195850A (en) * 2007-02-14 2008-08-28 Nitto Denko Corp Method for producing resin molded article
JP2015193752A (en) * 2014-03-31 2015-11-05 三菱化学株式会社 Boron nitride particle, method for producing boron nitride particle, coating liquid for heat radiation sheet comprising the boron nitride particle, heat radiation sheet comprising the boron nitride particle, and power device apparatus
WO2015174023A1 (en) * 2014-05-15 2015-11-19 パナソニックIpマネジメント株式会社 Insulating thermally conductive resin composition
CN106459594A (en) * 2014-05-15 2017-02-22 松下知识产权经营株式会社 Insulating thermally conductive resin composition
US9997274B2 (en) 2014-05-15 2018-06-12 Panasonic Intellectual Property Management Co., Ltd. Insulating thermally conductive resin composition
CN106459594B (en) * 2014-05-15 2019-04-09 松下知识产权经营株式会社 Insulating heat-conductive resin combination
JP2016074546A (en) * 2014-10-02 2016-05-12 住友ベークライト株式会社 Granulated powder, resin composition for heat radiation, heat radiation sheet, semiconductor device, and heat radiation member
CN110234712A (en) * 2017-01-30 2019-09-13 积水化学工业株式会社 Resin material and laminated body
US20210298170A1 (en) * 2018-07-18 2021-09-23 Mitsubishi Materials Corporation Metal base substrate
JP2020084154A (en) * 2018-11-30 2020-06-04 株式会社トクヤマ Resin molded body, resin composition and method for producing resin molded body
JP7295629B2 (en) 2018-11-30 2023-06-21 株式会社トクヤマ RESIN MOLDED PRODUCT, RESIN COMPOSITION, AND RESIN MOLDED PRODUCTION METHOD

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