JP2001057408A - Power module and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power module which is excellent in radiation and suitable for high-density miniaturization and manufacture thereof. SOLUTION: There are provided an insulator layer 104, leads 102 formed in a surface of the insulator layer 104, a semiconductor chip 101 electrically connected with the leads 102, and a heat sink 105 formed on the rear surface of the insulator layer 104. The insulator layer 104 contains 70-95 weight parts of inorganic filler and 5-30 weight parts of thermosetting resin composition. The semiconductor chip 101 is sealed in the insulator layer 104 and mounted on the insulator layer side surface of the leads 102 by flip chip bonding.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power module having a semiconductor chip mounted thereon and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, along with demands for higher performance and smaller size of electronic equipment, power supply circuits in the field of power electronics have also been desired to be reduced in size and energy saving. Therefore, the heat dissipation structure of the power module is an important issue.

As a method for improving the heat dissipation of a power module, a substrate having good thermal conductivity is used, and a semiconductor chip is placed on this substrate, and the back surface of the semiconductor chip (the surface opposite to the device formation surface) is placed on the substrate. There has been proposed a method of dissipating heat from a substrate by mounting it in contact with a surface.

As such a method, for example, a method using a metal base substrate in which a wiring pattern is formed on the surface of a metal plate of aluminum or the like via an insulating layer has been proposed. Further, a method using a substrate in which a copper plate is joined to the surface of a ceramic plate such as aluminum oxide or aluminum nitride has been proposed.

Further, a method has been proposed in which leads are formed on the surface of a substrate in which an inorganic filler is dispersed in a thermoplastic resin, and a semiconductor chip is mounted thereon. However, since this substrate is manufactured by melt-kneading a thermoplastic resin and an inorganic filler and injection-molding the same, it is difficult to fill the inorganic filler at a high concentration, and to improve the thermal conductivity. Has limitations.

Further, a method has been proposed in which leads are formed on a substrate surface in which an inorganic filler is dispersed in a thermosetting resin composition, and a semiconductor chip is mounted thereon (Japanese Patent Laid-Open No. 9-2).
70005). This substrate is manufactured by laminating a sheet having flexibility in an uncured state including a thermosetting resin and an inorganic filler, and a lead frame, and then curing the sheet to fill the inorganic filler at a high concentration. And achieves good thermal conductivity.

[0007]

As a method of mounting a semiconductor chip in the field of signal circuits, flip chip bonding or wire bonding has been adopted.
Flip chip bonding is a method in which a semiconductor chip is mounted such that the substrate surface and the semiconductor chip surface (element formation surface) face each other, that is, the semiconductor chip is mounted face down, and can be mounted at a higher density than wire bonding. is there.

However, in the power supply circuit field,
Heat dissipation from the back of the semiconductor chip is required. Therefore, in the conventional power module, it is necessary to make the front surface of the substrate and the back surface of the semiconductor chip contact each other in order to release heat from the substrate. Therefore, in the conventional power module, when the flip chip bonding is adopted, improvement in heat dissipation cannot be expected.

Therefore, in a conventional power module, wire bonding is employed in which a semiconductor chip is mounted on a substrate so that the back surface of the semiconductor chip and the surface of the substrate are in contact with each other. In this wire bonding, the electrodes of the semiconductor chip and the leads formed on the surface of the substrate are electrically connected via thin metal wires.
However, the conductor resistance of the thin metal wire is so large as to be negligible compared to the on-resistance of the semiconductor element. Therefore, when the semiconductor chip is mounted by wire bonding, the power loss increases, and the heat generation increases. Therefore, when the wire bonding is adopted, there is a problem that the substrate is required to have further heat dissipation.

An object of the present invention is to provide a power module excellent in heat radiation and suitable for high-density miniaturization and a method for manufacturing the same.

[0011]

In order to achieve the above object, a power module according to the present invention comprises an insulator layer containing an inorganic filler and a thermosetting resin composition, and an insulator layer formed on a surface of the insulator layer. A lead, at least one semiconductor chip mounted on a surface of the lead on the insulator layer side, and a heat sink formed on a back surface of the insulator layer, wherein the semiconductor chip is formed by flip-chip bonding. And sealed in the insulator layer.

[0012] In the power module having such a configuration, the semiconductor chip is built in the insulator layer having thermal conductivity with its back surface facing the heat sink. Therefore, heat can be efficiently radiated from the back surface of the semiconductor chip to the heat sink via the insulator layer. In addition, the semiconductor chip can be protected from moisture absorption and the like. Further, since the semiconductor chip is mounted by flip-chip bonding, resistance loss at a connection portion between the semiconductor chip and the lead can be reduced and high-density mounting can be performed, as compared with mounting by wire bonding.

In the power module, the semiconductor chip has a first electrode formed on a surface on the lead side and a second electrode formed on a surface on the heat sink side. A first electrode connected to the lead by flip chip bonding;
Is preferably connected to the lead via an internal lead arranged in the insulator layer. By using a semiconductor chip configured to allow current to flow in the thickness direction, it is possible to cope with an increase in current.

In the power module, the ratio of the inorganic filler in the insulator layer may be 70 to 95.
% By weight, and the ratio of the thermosetting resin composition is 5 to 3%.
It is preferably 0% by weight. According to this preferred example, the thermal conductivity of the insulator layer can be improved, and the heat dissipation can be further improved. Further, the thermal expansion coefficient of the insulator layer can be made approximately equal to that of the semiconductor, and a power module having excellent reliability can be obtained.

Further, in the power module,
The thermal conductivity of the insulator layer is preferably in the range of 1 to 10 W / (m · K). This is because heat dissipation can be further improved.

In the power module,
It is preferable that the thermal expansion coefficient of the insulator layer is in the range of 8 to 20 × 10 ⁻⁶ K ⁻¹ . By making the thermal expansion coefficients of the insulator layer and the semiconductor chip approximately the same, a power module having excellent reliability against thermal shock and the like can be obtained.

In the power module,
Preferably, the elastic modulus of the insulator layer is in the range of 20 to 50 MPa. This is because a power module having excellent reliability against thermal shock and the like can be obtained.

In the power module,
It is preferable that an electronic component is mounted on a surface of the lead opposite to a surface on which the semiconductor chip is mounted. This is because further high-density miniaturization of the power module can be achieved.

In the power module,
It is preferable that the lead is embedded in the insulator layer with at least a part of the lead exposed on the surface of the insulator layer. This is because the lead itself contributes to heat dissipation, so that the heat dissipation efficiency can be further improved. Further, when the electronic component is mounted on the surface of the lead opposite to the insulator layer side, there is an advantage that displacement is hard to occur.

In the power module,
It is preferable that a circuit board formed by laminating a wiring layer and a substrate layer is embedded in the insulator layer with at least one of the wiring layers exposed on the surface of the insulator layer. According to this preferred example, not only a power supply circuit but also peripheral circuits such as a control circuit and a protection circuit can be integrated, and mounting at a higher density is possible.

In the power module,
It is preferable that the thermosetting resin composition contains a thermosetting resin, a curing agent, and a curing accelerator.

In this case, in the thermosetting resin composition, the proportion of the thermosetting resin is 50 to 95% by weight, the proportion of the curing agent is 4.9 to 45% by weight, and the proportion of the curing accelerator is 0. It is preferably 0.1 to 5% by weight.

In the power module,
It is preferable that the thermosetting resin composition contains at least one thermosetting resin selected from the group consisting of an epoxy resin, a phenol resin and a cyanate resin.
This is because these thermosetting resins are excellent in heat resistance and electrical insulation.

In the above power module,
It is preferable that the thermosetting resin composition contains an epoxy resin, a novolak resin, and imidazole.
In particular, it preferably contains a brominated polyfunctional epoxy resin, a bisphenol A type novolak resin, and imidazole. This is because such a composition is excellent in heat resistance, electrical insulation and flame retardancy.

In this case, in the thermosetting resin composition, the proportion of the epoxy resin is 60 to 80% by weight, the proportion of the novolak resin is 18 to 39.9% by weight, and the proportion of the imidazole is 0.1%. It is preferably about 2% by weight.

In the power module,
The inorganic filler is Al ₂ O ₃ , SiO ₂ , MgO, B
It is preferably at least one selected from the group consisting of N and AlN. This is because these inorganic fillers are particularly effective for improving the thermal conductivity of the insulator layer. In particular,
AlN and BN are effective in improving the thermal conductivity of the insulator layer and reducing the coefficient of thermal expansion.

In the power module,
The average particle diameter of the inorganic filler is 0.1 to 100 μm
Is preferably within the range. This is because the inorganic filler can be filled at a high density. In particular, when inorganic fillers having different average particle diameters within the above range are used in combination, the filler can be filled at a higher density, and the thermal conductivity can be further improved.

In the power module,
It is preferable that the lead is at least one metal selected from the group consisting of copper, aluminum, nickel and iron. This is because the conductivity is high and the resistance loss is small even when a large current flows. In particular, copper is not only excellent in conductivity, but also has good thermal conductivity, which is advantageous in improving heat dissipation.

In the power module,
It is preferable that the thickness of the lead is in the range of 0.05 to 1.00 mm. This is because a large current can be handled.

In the power module,
It is preferable that a metal plating layer made of at least one selected from the group consisting of nickel, tin, solder and gold is formed on the surface of the lead on the insulator layer side. This is because the adhesion to the insulator layer is improved, and the reliability such as thermal shock is improved.

In the power module,
It is preferable that a surface of the lead on the insulator layer side is roughened. This is because the adhesion to the insulator layer is improved, and the reliability such as thermal shock is improved.

In the power module,
Preferably, the heat sink is aluminum or copper. This is because these metals have excellent thermal conductivity. In particular, copper is excellent in heat conductivity, so that good heat dissipation can be obtained. Further, aluminum is lightweight and inexpensive, and has excellent workability. Therefore, it is possible to increase the surface area by forming the heat sink into a complicated shape, and to obtain good heat dissipation.

In the power module,
It is preferable that the heat sink includes a radiation fin. This is because the heat radiation efficiency can be further improved.

In the power module,
Preferably, a surface of the heat sink on the insulator layer side is roughened. This is because the adhesion to the insulator layer is improved, and the reliability such as thermal shock is improved.

As the semiconductor chip, for example, a chip such as a silicon semiconductor and a silicon carbide semiconductor can be used. Specifically, IGBT
(Insulated gate bipolar transistor), MOS-FET (metal oxide semiconductor-field effect transistor) and the like can be used.

To achieve the above object, a method of manufacturing a power module according to the present invention comprises the steps of: forming a lead on a release carrier; mounting a semiconductor chip on the lead by flip chip bonding; Forming an uncured insulator layer containing an inorganic filler and a thermosetting resin composition on a mold carrier so as to cover the leads and the semiconductor chip; and forming the uncured insulator layer. Forming a laminate by stacking a heat sink thereon; heating the laminate to cure the insulator layer; and peeling off the release carrier.

With such a configuration, the power module of the present invention can be manufactured efficiently.
Further, in the manufacturing method of the present invention, since the leads are formed on the release carrier, a fine wiring pattern and an independent wiring pattern can be formed, and the module can be further downsized.

In the above manufacturing method, in the insulating layer, the proportion of the inorganic filler is 70 to 95% by weight, and the proportion of the thermosetting resin composition is 5 to 30% by weight.
It is preferable that This is because the thermal conductivity of the insulator layer can be improved, and the heat dissipation of the power module can be further improved.

In the above-mentioned manufacturing method, the step of forming the insulator layer is a step of applying a paste containing the inorganic filler and the thermosetting resin composition on the release carrier. Is preferred. This is because the insulating layer can be filled with the inorganic filler at a high concentration, and the heat dissipation of the power module can be further improved.

In this case, it is preferable that the application of the paste is performed by screen printing or metal mask printing. This is because the insulator layer can be formed with simple equipment.

In the above-mentioned manufacturing method, the step of forming the insulator layer includes the step of forming a sheet containing the inorganic filler and the thermosetting resin composition and having flexibility in an uncured state. And a step of laminating on the release carrier. This is because the insulating layer can be filled with the inorganic filler at a high concentration, and the heat dissipation of the power module can be further improved.

Further, in the manufacturing method, during the step of forming the insulator layer, or after the step of forming the insulator layer is performed, and in the step of curing the insulator layer, Prior to this, it is preferable that the formed product formed on the release carrier is exposed to a vacuum. This is because voids in the insulator layer that cause a decrease in dielectric strength can be reduced.

Preferably, the method further comprises, after the step of removing the release carrier, a step of mounting an electronic component on a surface of the lead opposite to the insulator layer side. This is because a further high-density miniaturization of the power module can be achieved.

Further, in the manufacturing method, after the leads are formed on the release carrier, a circuit board formed by laminating a wiring layer and a substrate layer is disposed on the release carrier, Preferably, a layer is formed so as to cover the circuit board. By forming peripheral circuits such as a control circuit and a protection circuit on a circuit board, it is possible to further reduce the size and size of the module.

In the above-mentioned manufacturing method, in the step of heating the laminate, the heating temperature is set to 130 to 260.
It is preferable to be in the range of ° C. This is because the thermosetting resin composition constituting the insulator layer can be cured in a short time.

In the above-mentioned manufacturing method, in the step of heating the laminate, the laminate may have a thickness of 19.6 MPa.
It is preferable to apply a pressure equal to or less than a. This is because the gap between the semiconductor chip and the lead can be easily filled with the thermosetting resin composition constituting the insulator layer.

Further, in the above-mentioned production method, it is preferable that the thermosetting resin composition contains a thermosetting resin, a curing agent and a curing accelerator.

In this case, in the thermosetting resin composition, the proportion of the thermosetting resin is 50 to 95% by weight, the proportion of the curing agent is 4.9 to 45% by weight, and the proportion of the curing accelerator is Is preferably 0.1 to 5% by weight.

In the above-mentioned production method, it is preferable that the thermosetting resin composition contains at least one thermosetting resin selected from an epoxy resin, a phenol resin and a cyanate resin. This is because it is excellent in heat resistance and electrical insulation.

In the above-mentioned production method, it is preferable that the thermosetting resin composition contains a thermosetting resin which is liquid at room temperature. This is because it is easy to produce a paste having appropriate viscosity for application or a sheet having appropriate flexibility. The room temperature is usually 20 ° C.

In this case, the thermosetting resin liquid at room temperature is:
It is preferably at least one selected from the group consisting of bisphenol A type epoxy resin, bisphenol F type epoxy resin and liquid phenol resin. This is because an insulator layer having excellent heat resistance can be formed, and the gap between the flip-chip mounted semiconductor chip and the lead can be easily filled with the insulator.

In the above-mentioned manufacturing method, it is preferable that the inorganic filler is at least one selected from the group consisting of Al ₂ O ₃ , SiO ₂ , MgO, BN and AlN. This is because it is particularly effective for improving the thermal conductivity of the insulator layer.

In the above-mentioned production method, the average particle diameter of the inorganic filler is preferably in the range of 0.1 to 100 μm. This is because the inorganic filler can be filled at a high density.

In the above-mentioned manufacturing method, it is preferable that the lead is made of at least one metal selected from the group consisting of copper, aluminum, nickel and iron. This is because the conductivity is high and the resistance loss is small.

In the above-mentioned manufacturing method, it is preferable that the thickness of the lead is in the range of 0.05 to 1.00 mm. This is because a large current can be handled.

In the manufacturing method, before the step of forming the insulator layer, at least one of nickel, tin, solder and gold selected from the group consisting of nickel, tin, solder and gold is provided on the surface of the lead that is in contact with the insulator layer. It is preferable to form a seed metal plating layer. This is because the adhesive strength with the insulator layer can be improved and the solder wettability at the time of mounting the semiconductor chip and the electronic component can be improved.

In the manufacturing method, it is preferable that a surface of the lead in contact with the insulator layer is roughened before the step of forming the insulator layer. This is because the adhesive strength with the insulator layer can be improved.

In the above-mentioned manufacturing method, it is preferable that the heat sink is made of aluminum or copper. Further, it is preferable that the heat sink includes a radiation fin. This is because the heat radiation efficiency is improved.

In the manufacturing method, preferably, before the step of laminating the heat sink on the insulator layer, a surface of the heat sink in contact with the insulator layer is roughened. This is because the adhesive strength with the insulator layer is improved.

Further, in the above-mentioned production method, it is preferable to use an organic film as the release carrier. This is because peeling from the insulator layer and the lead is easy and the cost is low. As the organic film, for example, at least one organic film selected from the group consisting of polyphenylene oxide, polyimide, polyethylene, polyethylene terephthalate and aramid can be used.

In the above-mentioned manufacturing method, it is preferable to use a metal foil as the release carrier. This is because the dimensional change of the metal foil due to heat is small, so that the dimensional change in the step of curing the insulator layer can be suppressed. As the metal foil, for example, at least one metal foil selected from the group consisting of a copper foil, a nickel foil, and an aluminum foil can be used.

[0062]

FIG. 1 is a sectional view showing an example of a power module according to the present invention. This power module includes an insulator layer 104 containing a semiconductor chip 101,
Lead frame 102 formed on surface of insulator layer 104
And a heat sink 10 formed on the back surface of the insulator layer 104.
5 is provided. The semiconductor chip 101 has a surface electrode, and is mounted on the surface of the lead frame 102 on the insulator layer side by flip chip bonding. That is, the semiconductor chip 101 is disposed with the front surface (device forming surface) facing the lead frame and the back surface (the surface opposite to the device forming surface) facing the heat sink. Frame 1
02 is electrically connected via the bump 103. A surface-mounted electronic component 106 is disposed on the surface of the insulator layer 104, and is mounted on the surface of the lead frame 102 opposite to the semiconductor chip side.

In the above power module, the insulating material forming the insulator layer 104 is formed of the lead frame 102.
The semiconductor chip 101 mounted on the semiconductor chip 101 is covered from the back, and the gap between the semiconductor chip 101 and the lead frame 102 is also filled. As a result, the semiconductor chip 101 is embedded inside the insulating layer 104 and is completely shut off from the outside air.

The gap between the lead frames 102 is filled with the insulating material constituting the insulator layer 104. As a result, the lead frame 102 is embedded in the insulator layer 104 with one surface (the surface opposite to the surface on which the semiconductor chip is mounted) exposed to the outside.

The insulating layer 104 is made of a thermosetting resin composition.
It is a layer in which an inorganic filler is dispersed.
It has such characteristics. The thermal conductivity of the insulator layer 104 is 1 to
10 W / (m · K), preferably 3 to 10 W / (m · K)
K), more preferably 5 to 10 W / (m · K).
The coefficient of thermal expansion of the insulator layer 104 is 8 to 20 × 10
^-6K^-1, Preferably 8 to 17 × 10^-6K^-1, Even more preferred
8 to 13 × 10^-6K ^-1It is. The elastic modulus is 2
0 to 50 MPa, preferably 20 to 40 MPa, more preferably
Preferably it is 20 to 30 MPa. In addition, thermal conductivity, heat
The characteristics such as the expansion coefficient and the elastic modulus
It can be adjusted by the composition.

FIG. 2 is a sectional view showing another example of the power module according to the present invention. The power module includes an insulator layer 114 containing a semiconductor chip 111,
Lead frame 112 formed on surface of insulator layer 114
And the heat sink 11 formed on the back surface of the insulator layer 114
5 is provided. The semiconductor chip 111 is configured so that a current flows in the thickness direction of the chip, and has a surface electrode on the front surface and a back electrode on the back surface. The semiconductor chip 111 is arranged with the front surface facing the lead frame and the rear surface facing the heat sink.

The surface electrodes of the semiconductor chip 111 are connected to the lead frame 112 via bumps 113, that is, connected by flip chip bonding. On the other hand, the back electrode of the semiconductor chip 111 is connected to the lead frame 112 via the internal leads 117. The internal leads 117 are embedded in the insulator layer 114.

As the internal lead 117, for example, copper,
Aluminum, nickel, iron and the like can be used. It is preferable that a metal plating layer of, for example, nickel, tin, solder, gold, or the like be formed on the surface. The thickness of the internal lead 117 is, for example, 0.1 to
It is 2.0 mm, preferably 0.4 to 1.0 mm, and more preferably 0.5 to 0.8 mm.

As described above, the semiconductor chip 111
In order to switch a larger current, a configuration is adopted in which the current flows in the thickness direction. In order to extract a current from the back electrode of the semiconductor chip 111, the electrical resistance of the internal lead 117 must be reduced as much as possible to minimize the resistance loss. The thickness of the internal lead 117 is appropriately set according to the magnitude of the current taken out from the back electrode of the semiconductor chip 111. For example, the current is up to about 5A and is 0.2 mm or more, and about 20A is 0.5 mm or more.
At about 40A, it is 0.8 mm or more.

The power module shown in FIG. 2 is the same as the power module shown in FIG. 1 except that the back electrode of the semiconductor chip is connected to the lead frame by the internal leads.

FIG. 3 is a sectional view showing another example of the power module according to the present invention. The power module shown in FIG. 3 has an insulator layer 204 in which a semiconductor chip 201 is built.
And the lead frame 2 formed on the surface of the insulator layer 204
02, a heat sink 205 formed on the back surface of the insulator layer 204, and a circuit board 207 buried on the surface of the insulator layer 204.

The insulating material constituting the insulator layer 204 is also filled in the gap between the lead frame 202 and the circuit board 207, so that the circuit board 207 has one side exposed to the outside and It will be embedded in the surface of the layer 204.

The circuit board 207 is an insulating substrate 207a.
And a conductor layer 207b constituting a wiring pattern. As the insulating substrate 207a, for example, a glass-epoxy substrate in which a glass woven fabric is impregnated with an epoxy resin, a paper-phenol substrate in which paper is impregnated with a phenol resin, or the like can be used. Further, as the conductor layer 207b, for example, copper, aluminum, or the like can be used. The circuit board 207 is not limited to a double-sided wiring board as shown in FIG. 3, but may be a multilayer wiring board.

The power module shown in FIG. 3 is the same as the power module shown in FIG. 1 except that it has a circuit board 207.

The power module of the present invention can be manufactured, for example, by the following method. FIG.
4A to 4F are process diagrams for explaining an example of a method for manufacturing the power module shown in FIG.

First, a lead frame 302 is formed on the surface of the release carrier 301 (FIG. 4A).

As the lead frame 302, for example,
Metal foils such as copper, aluminum, nickel and iron can be used. Further, it is preferable that the surface of the lead frame 302 is subjected to an antioxidation treatment by metal plating such as nickel, tin, solder and gold.

Further, it is preferable that the surface of the lead frame 302 be subjected to a surface roughening treatment. As the surface roughening method, any of a chemical treatment method and a physical treatment method can be adopted. As a chemical treatment method, for example, a method of immersing a lead frame in an aqueous solution of iron chloride, copper chloride or the like and etching the lead frame can be mentioned. Further, as a physical treatment method, for example, a method of blowing a powder of aluminum oxide or the like onto a lead frame surface together with compressed air can be cited.

By roughening the surface of the lead frame, the adhesion to the insulator layer is greatly improved. This is because the surface area is increased by the roughening, and the bonding strength is increased by the anchor effect. As a result of the improved adhesion with the insulator layer, the reliability against thermal shock such as a heat cycle is greatly improved. Since such effects can be obtained efficiently, it is preferable to employ the above-described physical treatment method as the surface roughening treatment method.

Further, in the surface roughening of the lead frame, Rz representing the degree of surface roughening is preferably in the range of 2 to 20 μm, more preferably 2 to 5 μm. Here, Rz is the average value of the heights of the peaks from the highest peak to the fifth height in the profile of the rough surface, and the depth of the valley from the deepest valley to the fifth deepest valley. , And it can be said that the larger the Rz, the rougher the surface.

When an organic film is used as the release carrier 301, the lead frame 302 is formed by applying an adhesive on the organic film, laminating a metal foil on the applied surface, and applying photolithography and A method of patterning by etching can be adopted.
It is preferable to use an adhesive having tackiness such as a rubber adhesive.

When a metal foil is used as the release carrier 301, the lead frame 302 may be formed by applying an adhesive onto a metal foil as a release carrier and applying a metal to be a lead frame on a surface to which the adhesive is applied. A method of stacking foils and patterning them by photolithography and etching can be employed. Further, a metal layer may be formed on a metal foil as a release carrier by an electrolytic plating method or the like, and this metal layer may be used as the lead frame 302. According to the latter method, there is no possibility that the adhesive remains on the lead frame surface after the release carrier is peeled off, and a clean surface can be obtained. Also, the peeling step is easy.

Next, the semiconductor chip 303 is mounted at a predetermined position on the lead frame 302 (FIG. 4B). This step is performed by flip chip mounting. First, the bump 304 is formed on the surface of the electrode of the semiconductor chip 303, and solder is formed on the surface of the bump 304. next,
The semiconductor chip 303 is mounted face-down on the lead frame 302, and in this state, the solder is reflowed to join the bump 304 and the lead frame 302. Alternatively, a bump 3 may be formed on the surface of the electrode of the semiconductor chip 303.
After the formation of the semiconductor chip 303, the semiconductor chip 303 is mounted face down on the lead frame 302, and in this state, the bump 304 and the lead frame 302 are directly bonded by applying heat and pressure or applying ultrasonic waves. Good.

Next, an insulating paste 305 is printed on the surface of the release carrier 301 provided with the lead frame 302 so as to cover the semiconductor chip 303 to form an uncured insulating layer (FIG. 4C). ).

The insulating paste 305 is prepared by mixing a solvent with an insulating material containing an inorganic filler and a thermosetting resin composition, if necessary.

The thermosetting resin composition constituting the insulator material is a composition containing a thermosetting resin as a main component and appropriately containing additives such as a curing agent and a curing accelerator. As the thermosetting resin, an epoxy resin, a phenol resin, a cyanate resin and the like can be used. In particular, use a thermosetting resin that is liquid at room temperature, such as a bisphenol A epoxy resin, a bisphenol F epoxy resin, or a liquid phenol resin, alone or in combination with a thermosetting resin that is solid at room temperature. Is preferred.

The curing agent and the curing accelerator are selected according to the type of the thermosetting resin used. For example, when an epoxy resin is used as the thermosetting resin, examples of the curing agent include amines such as aliphatic polyamines and aromatic polyamines, acid anhydrides, phenol resins such as novolak, and amino resins. As an accelerator,
Examples thereof include amines such as imidazoles and benzyldimethylamine.

When the total amount of the thermosetting resin composition is 100 parts by weight, the preferred ranges of the contents of the above components are as follows. At room temperature, a solid thermosetting resin
45 parts by weight, the thermosetting resin liquid at room temperature is 5 to 50 parts by weight, and the total of both is 50 to 95 parts by weight, preferably 65 to 90 parts by weight. The curing agent is 4.9 to 45.
Parts by weight, preferably 9.9 to 35 parts by weight. Also,
0.1 to 5 parts by weight, preferably 0.5 to 5 parts by weight of a curing accelerator
It is appropriate to use 3.5 parts by weight.

As the inorganic filler, various oxides and nitrides can be used. For example, Al ₂
O ₃ , SiO ₂ , MgO, BN, AlN and the like can be mentioned. The average particle diameter of the inorganic filler is 0.1 to 10
It is preferably 0 μm, more preferably 7 to 12 μm.

The content of each component in the insulating material is 5 to 30 parts by weight, preferably 7 to 15 parts by weight, more preferably 9 to 10 parts by weight based on 100 parts by weight of the whole insulating material. 12 parts by weight, the inorganic filler is 70 to
It is suitably 95 parts by weight, preferably 86 to 93 parts by weight, more preferably 89 to 93 parts by weight.

It is preferable that the insulating material contains additives such as a coupling agent, a dispersant, a coloring agent, and a release agent, if necessary. This is because the properties of the insulator layer can be improved by containing various additives. For example, a coupling agent is effective in improving the dielectric strength in order to improve the adhesion between the inorganic filler and the thermosetting resin. Further, the dispersant improves the dispersibility of the inorganic filler and is effective in reducing the composition unevenness in the insulating layer. Further, if the colorant is, for example, a black colorant such as carbon powder, it is effective for improving the heat dissipation of the insulator layer.

The insulating material obtained by kneading the thermosetting resin composition and the inorganic filler can be used as it is as the insulating paste 305 when it has a viscosity suitable for application. Also, if the viscosity of the insulating material is high,
A suitable solvent can be adjusted by mixing a solvent which can be volatilized in a later step. As the solvent, a solvent having a boiling point lower than the curing temperature of the thermosetting resin can be used. The viscosity of the insulator paste 305 is not particularly limited, but is suitably about 100 to 300 Pa · s.

As a method of printing the insulator paste 305, for example, a metal mask printing method, a screen printing method, or the like can be adopted. However, when the screen printing method is adopted, it is necessary to repeatedly print until a desired layer thickness is obtained. In addition, in order to reliably fill the gap between the lead frames 302 with the insulating paste 305 and reduce voids in the insulating layer, printing is performed in a vacuum or
It is preferable to perform a heat treatment in a vacuum after printing.

Next, a heat sink 306 is laminated on the insulator paste 305. Thereafter, this is heated and pressurized, and the thermosetting resin constituting the insulator paste 305 is cured to form an insulator layer 307 (FIG. 4D). By this step, the insulator layer 307 is integrated with the semiconductor chip 303, the lead frame 302, and the heat sink 306.

As the heat sink 306, for example, an aluminum plate, a copper plate or the like can be used.
It is preferable to use one provided with a radiation fin. Further, it is preferable that the surface of the heat sink 306 is previously subjected to a surface roughening treatment in the same manner as the above-described surface roughening treatment for the lead frame surface. The degree of surface roughening of the heat sink is the same as that of the lead frame. By such a roughening of the heat sink, the same effect as the roughening of the lead frame can be obtained.

The temperature at the time of heating and pressing may be at least the curing temperature of the thermosetting resin constituting the insulating paste 305, and is usually 130 to 260 ° C., preferably 17 ° C.
0 to 230 ° C. The pressure is usually 19.6M
Pa or less, preferably 2.94 to 14.7 MPa is appropriate.

Next, the release carrier 301 is separated from the lead frame 302 and the insulator layer 307 (FIG. 4).
(E)). At this time, the adhesive applied to the release carrier 301 and the release carrier 301 together with the lead frame 3
02 is removed.

Further, a power module is manufactured by mounting the surface mount type electronic component 308 at a desired position on the surface of the lead frame 302 from which the release carrier 301 has been removed (FIG. 4 (f)). Surface mount type electronic component 308
The mounting method is not particularly limited. For example, after solder is formed on the electrode surface of the surface-mounted electronic component 308, the surface-mounted electronic component 308 is connected to the lead frame 3.
02, and solder can be reflowed in that state. In this case, it is preferable to use lead-free solder as the solder because cracks are less likely to occur in the soldered portion. As a method for forming the solder, a method for forming a solder resist, a method for printing cream solder, or the like can be employed.

In the case where the power module as shown in FIG. 2 is manufactured by the above manufacturing method, FIG.
In the step, after connecting the front electrode of the semiconductor chip and the lead frame via the metal bump, the back electrode of the semiconductor chip and the lead frame are connected via the internal lead. After that, the step of FIG.

When the power module as shown in FIG. 3 is manufactured by the above manufacturing method, the power module shown in FIG.
In the step of, the circuit board is arranged on the adhesive applied surface of the release carrier so as not to overlap with the lead frame,
In the step of FIG. 4C, an insulating paste may be applied so as to cover the circuit board.

In the above-described manufacturing method, the printing step for forming the insulator layer and the curing step for the insulator layer are separately performed. However, these steps may be performed continuously as a series of steps. is there.

The power module according to the present invention can be manufactured by a method as described below. FIG.
5A to 5F are process cross-sectional views for explaining another example of the method for manufacturing the power module shown in FIG.

First, a lead frame 402 is formed on the surface of the release carrier 401 (FIG. 5A), and a semiconductor chip 403 is mounted on a predetermined position of the lead frame 402 (FIG. 5B). The above steps can be carried out in the same manner as in FIGS.

Next, an insulator sheet 405 is aligned and laminated on the surface of the lead frame 402 on which the semiconductor chip 403 is mounted, to form an uncured insulator layer (FIG. 5).
(C)).

The insulating sheet 405 has flexibility in an uncured state. This insulator sheet 405 is prepared by mixing a suitable solvent with an insulating material containing an inorganic filler and a thermosetting resin composition to prepare a slurry, and forming the slurry on the surface of a release carrier for film formation. , By drying the solvent. The method for forming the film is not particularly limited, and a doctor blade method, a coater method, an extrusion method, or the like can be employed. Although the viscosity of the slurry is not particularly limited, for example, when a doctor blade is used, a viscosity of about 5 to 100 Pa · s is appropriate. The drying temperature is not lower than the boiling point of the solvent and not higher than the curing temperature of the thermosetting resin.

As the insulating material, the same insulating material as described in the description of the step of FIG. 4C can be used. It is preferable to use a solvent having a boiling point of 100 ° C. or lower, such as methyl ethyl ketone. Further, when the insulating material has an appropriate viscosity for forming a film and the sheet after solvent drying has flexibility, the solvent need not be added.

Next, after the heat sink 406 is laminated on the insulator sheet 405, the heat sink 406 is heated and pressurized to thereby form the insulator sheet 40.
5 is cured to form an insulating layer 407.
(FIG. 5D). This step can be performed substantially in the same manner as the step of FIG. However, the pressure at the time of heating and pressurizing is preferably 19.6 MPa or less, more preferably 2.94 to 14.7 MPa. Thus, the insulator layer 407 is bonded to and integrated with the semiconductor chip 403, the lead frame 402, and the heat sink 406.

Thereafter, in the same manner as in the steps of FIGS. 4E and 4F, the release carrier 401 is peeled off, and the surface mount type electronic component 408 is mounted, whereby a power module is manufactured (FIG. 5 (C)). e) and (f)).

In the case where the power module as shown in FIG. 2 is manufactured by the above-described manufacturing method, FIG.
In the step, after connecting the front electrode of the semiconductor chip and the lead frame via the metal bump, the back electrode of the semiconductor chip and the lead frame are connected via the internal lead. After that, the step of FIG. 5C may be performed.

When the power module as shown in FIG. 3 is manufactured by the above-described manufacturing method, the power module shown in FIG.
In the step, the circuit board is arranged on the adhesive applied surface of the release carrier 401 so as not to overlap with the lead frame, and in the step of FIG. 5C, the insulator sheet is covered so as to cover the circuit board. What is necessary is just to laminate.

[0111]

EXAMPLE (Example 1) A power module having a structure similar to that of FIG. 1 was manufactured in the following manner. First, a 50 μm-thick polyphenylene sulfide (PPS) film was used as a release carrier, and a rubber-based adhesive was applied to the surface of the film at a thickness of 10 μm. A copper foil having a thickness of 250 μm was adhered to the adhesive-coated surface of the release carrier by a roll laminating method. Furthermore, after laminating a dry film on the copper foil surface, the dry film was exposed through a mask having a wiring pattern formed thereon, and developed so as to remove the dry film other than the exposed portions. Next, the copper foil was immersed in a ferric chloride solution to remove unnecessary portions, and the dry film was further removed with caustic soda to form a lead frame.

Next, the semiconductor chip was flip-chip mounted on the lead frame. As the semiconductor chip, an IGBT with a current of 50 A (Matsushita Electronics Corporation) was used. The diameter of the semiconductor chip electrode is 100 μm and the height is 40
A μm bump was formed by gold plating, and eutectic solder was printed on the bump. The semiconductor chip was placed on a lead frame, and the eutectic solder was melted with a solder reflow device while the semiconductor chip was fixed, and the electrodes of the semiconductor chip were electrically connected to the lead frame.

Next, an insulating paste was printed on a release carrier having a lead frame and a semiconductor chip to form an insulating layer. As the insulator paste, one obtained by kneading a resin composition having the following composition with a three-roll mill and adjusting the viscosity to 100 Pa · s (25 ° C.) was used. (1) Inorganic filler: Al ₂ O ₃ (“AS-” manufactured by Showa Denko KK)
90 "parts by weight (40) (trade name), spherical, average particle diameter 12 m) (2) Thermosetting resin composition: epoxy resin composition (" WE-3025 (trade name) "manufactured by Nippon Pernox Co., Ltd .; epoxy resin 50 weight %, Curing agent (acid anhydride) 45% by weight and curing accelerator (imidazole) 5% by weight.)
9.5 parts by weight (3) Additive: carbon black (manufactured by Toyo Carbon Co., Ltd.)
0.3 parts by weight, dispersant (Daiichi Kogyo Seiyaku Co., Ltd. “Plysurf F-208F (trade name)”) 0.2 parts by weight For printing, set a lead frame on a printing stage,
SUS metal mask (0.7
(thickness: mm) to a position where it comes into contact with the lead frame, an insulating paste was dropped on a metal mask, and then printed on the mask opening with a SUS plate squeegee. Further, after removing the metal mask, heat treatment was performed in vacuum to remove voids in the insulator layer, and the thermosetting resin constituting the insulator layer was uncured and had no tackiness.

Next, an aluminum plate (1.0 mm thick) was laminated as a heat sink on the insulator layer, and a temperature of 175
The thermosetting resin in the insulator layer was cured by heating and pressing at 30 ° C. and a pressure of 4.9 MPa for 30 minutes, and the insulator layer, the semiconductor chip, the lead frame and the heat sink were integrated. The thickness of the insulator layer after heating and pressing is 0.63.
mm. Thereafter, the release carrier was peeled off to obtain a power module.

When the thermal conductivity of the obtained power module was evaluated, a thermal resistance value of 0.8 ° C./W was obtained. The thermal resistance was calculated from the measured value by measuring the temperature of the back surface of the heat sink by supplying a current to the semiconductor chip to generate heat.

As for the reliability evaluation, the maximum temperature was 2
A reflow test was performed at 60 ° C. for 10 seconds. At this time,
No abnormality such as generation of a gap was observed at the interface between the insulator layer and the lead frame and the interface between the insulator layer and the semiconductor chip, and it was confirmed that strong adhesion was obtained.

Example 2 After printing and drying an insulator paste of each composition shown in Table 1 on a PPS film (75 μm thick), another PPS film was laminated and cured by hot pressing. An insulator in the shape of was prepared.

[0118]

[Table 1]

Here, as the epoxy resin composition, a bisphenol F type epoxy resin (manufactured by Yuka Shell Epoxy Co., Ltd.) 90% by weight, and an amine adduct as a curing agent (“MY-H (trade name)” manufactured by Ajinomoto Co.) A composition containing 3% by weight and 7% by weight of imidazole as a curing accelerator was used.

As Al ₂ O ₃ , “A” manufactured by Showa Denko KK
S-40 (trade name) ", SiO ₂ , MgO and BN
A reagent manufactured by Kanto Chemical Co. was used. As a coloring agent, carbon black manufactured by Toyo Carbon Co., Ltd., and as a dispersing agent, “Plysurf, F-208F” manufactured by Daiichi Kogyo Seiyaku Co., Ltd.
(Trade name) "and a titanate-based coupling agent" Plenact (trade name) "manufactured by Ajinomoto Co., Inc. was used as the coupling agent.

The elastic modulus, coefficient of thermal expansion, and thermal conductivity of the manufactured plate-like insulator were measured. In addition, the measuring method is as follows.

Elastic modulus: Measured according to the method described in JIS C6481.

Coefficient of thermal expansion: Test pieces (5
(mm × 5 mm, thickness 1.0 mm) was heated at a rate of 5 ° C./min, the amount of thermal expansion in the thickness direction was measured, and the measured amount of thermal expansion was converted to a value per 1 ° C. Expressed in parts per million relative to the dimensions of the test specimen at ° C. Measurement is 40-1
The measurement was performed at a temperature of 00 ° C., and the average value in the above temperature range was determined to be the thermal expansion coefficient.

Thermal conductivity: The surface of the test piece (5 mm × 5 mm, thickness 1.0 mm) was brought into contact with a heater, and the back surface of the test piece was fixed to a radiation fin cooled to room temperature. In this state, the surface of the test piece was heated with a constant power, the temperature difference between the front and back surfaces of the test piece was measured, and the thermal resistance value was calculated as the temperature difference per power. In addition, the reciprocal of the thermal resistance was calculated to calculate the thermal conductivity.

Further, ten kinds of power modules were produced in substantially the same manner as in Example 1 except that the insulating pastes having the respective compositions shown in Table 1 were used. After performing a heat cycle test on the manufactured power module, the withstand voltage was measured. The heat cycle test was performed by repeating the operation of holding the power module at a low temperature of −55 ° C. for 30 minutes and then holding it at a high temperature of 125 ° C. for 30 minutes 1000 times.

Table 2 shows the measurement results.

[0127]

[Table 2]

As shown in Table 2, inorganic fillers 70 to 9
When 5 parts by weight and 5 to 30 parts by weight of the thermosetting resin composition are contained (Sample Nos. 2 to 10), they have excellent thermal conductivity, high elasticity, and a thermal expansion coefficient similar to that of a semiconductor. It was confirmed that an insulator having the same could be obtained. Also, it was confirmed that the power module using such an insulator layer had good heat cycle reliability.

Example 3 A power module having the structure shown in FIG. 1 was manufactured in the following manner. First, in the same manner as in Example 1, a lead frame was formed on a release carrier, and a semiconductor chip was flip-chip mounted on the lead frame.

Next, a methyl ethyl ketone solvent was added to the resin composition having the following composition, and the mixture was rotated and mixed at a speed of 500 rpm for 48 hours in a pot containing alumina balls to prepare a slurry. The amount of the methyl ethyl ketone solvent added was such that the viscosity of the slurry could be adjusted to about 20 Pa · s. (1) Inorganic filler: 85 parts by weight of AlN (manufactured by Dow Chemical Company, average particle size: 12 μm) (2) Thermosetting resin composition: cyanate resin composition (AroCyM-30 (trade name) manufactured by Asahi Ciba) ) 14 parts by weight (3) Additive: carbon black (manufactured by Toyo Carbon Co., Ltd.)
0.3 parts by weight, dispersant (Daiichi Kogyo Seiyaku Co., Ltd. “Plysurf F-208F (trade name)”) 0.2 parts by weight Next, a 75 μm-thick polyethylene terephthalate (PET) as a release carrier for film formation A film was prepared, and the slurry was formed on this release carrier for film formation by a doctor blade method with a gap (distance between the blade and the release carrier for film formation) of about 1.4 mm. Next, the film forming sheet was left at a temperature of 100 ° C. for 1 hour, and the methyl ethyl ketone solvent in the film forming sheet was dried. Next, the release carrier for film formation was peeled off to obtain a flexible insulating sheet (750 μm thick).

Next, a lead frame on which a semiconductor chip was mounted, an insulator sheet, and an aluminum plate as a heat sink were laminated. This laminate is heated at a temperature of 260
Heating and pressurizing was performed for 1 hour at a temperature of 9.8 MPa and a temperature of 9.8 MPa to cure the thermosetting resin of the insulating sheet and to integrate the insulating layer, the semiconductor chip, the lead frame, and the heat sink. Thereafter, the release carrier was peeled off to obtain a power module.

When the thermal conductivity of the obtained power module was evaluated, a thermal resistance value of 0.75 ° C./W was obtained.
In addition, when the dielectric strength was measured, a dielectric strength of 10 KV / mm or more was obtained.

Example 4 A power module having a structure similar to that of FIG. 2 was manufactured in the following manner. First, a copper foil having a thickness of 70 μm was used as a release carrier, and a copper plating layer having a thickness of 250 μm was formed on the surface thereof by electrolytic copper plating. After adhering a dry film to the surface of the copper plating layer of the release carrier, the dry film was exposed through a mask having a wiring pattern formed thereon, and developed to remove the dry film other than the exposed portions. Next, the copper plating layer was immersed in a ferric chloride solution to remove the copper plating layer by etching, and the dry film was further removed with caustic soda to form a lead frame wiring pattern using the copper plating layer on the release carrier.

Next, the semiconductor chip was flip-chip mounted on the lead frame. As the semiconductor chip, an IGBT with a current of 50 A (Matsushita Electronics Corporation) was used. A bump having a diameter of 100 μm and a height of 40 μm was formed on the surface electrode of the semiconductor chip by gold plating, and eutectic solder was printed on the bump. The semiconductor chip was placed on the lead frame such that the surface electrodes faced the lead frame. With the semiconductor chip fixed, the eutectic solder was melted by a solder reflow device, and the surface electrode of the semiconductor chip was electrically connected to the lead frame.

Subsequently, the back electrode of the semiconductor chip and the lead frame were connected via internal leads. The inner lead is made by punching a copper plate and then
It was produced by forming an m-thick gold plating layer. The internal lead was bonded to the back electrode of the semiconductor chip and the lead frame by an ultrasonic bonding device.

Next, an insulating paste was printed on a release carrier having a lead frame and a semiconductor chip to form an insulating layer. The same insulator paste as in Example 1 was used. Next, an aluminum plate (1.0 mm thick) is laminated on the insulator layer as a heat sink, and heated and pressed at a temperature of 175 ° C. and a pressure of 4.9 MPa for 30 minutes to cure the thermosetting resin in the insulator layer. At the same time, the insulator layer, the semiconductor chip, the lead frame and the heat sink were integrated. Thereafter, the release carrier was peeled off to obtain a power module. In the obtained power module, the internal leads are embedded in the insulator layer,
In addition, no deformation due to curing of the insulator layer was observed.

When the thermal conductivity of the obtained power module was evaluated, a thermal resistance value of 0.75 ° C./W was obtained.
As the reliability evaluation, the maximum temperature was 10
A second reflow test was performed. At this time, no abnormalities such as gaps were found at the interface between the insulator layer and the lead frame, the interface between the insulator layer and the semiconductor chip, and the interface between the insulator layer and the internal leads, and strong adhesion was observed. It could be confirmed that it was obtained.

[0138]

As described above, according to the power module of the present invention, an insulator layer containing an inorganic filler and a thermosetting resin composition, a lead formed on the surface of the insulator layer, At least one semiconductor chip mounted on the surface of the lead on the insulator layer side, and a heat sink formed on the back surface of the insulator layer, wherein the semiconductor chip is mounted on the lead by flip chip bonding In addition, since the power module is sealed in the insulator layer, a power module having excellent heat radiation efficiency and capable of high-density mounting can be provided.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of a power module of the present invention.

FIG. 2 is a sectional view showing another example of the power module of the present invention.

FIG. 3 is a sectional view showing another example of the power module of the present invention.

FIG. 4 is a sectional view illustrating an example of a method for manufacturing a power module according to the present invention.

FIG. 5 is a cross-sectional view illustrating another example of the method of manufacturing a power module according to the present invention.

[Explanation of symbols]

 101, 111, 201 Semiconductor chip 102, 112, 202 Lead 103, 113, 203 Bump 104, 114, 204 Insulator layer 105, 115, 205 Heat sink 106, 116, 206 Surface mount type electronic component 117 Internal lead 207 Circuit board 301 , 401 Release carrier 302, 402 Lead frame 303, 403 Semiconductor chip 304, 404 Bump 305, 405 Uncured insulator layer 306, 406 Heat sink 307, 407 Cured insulator layer 308, 408 Surface mounted electronic components

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Mitsuhiro Matsuo 1006 Kazuma Kadoma, Osaka Pref.Matsushita Electric Industrial Co., Ltd.

Claims (51)

[Claims] 1. An insulator layer containing an inorganic filler and a thermosetting resin composition, a lead formed on a surface of the insulator layer, and at least a lead mounted on a surface of the lead on the insulator layer side. A semiconductor chip and a heat sink formed on a back surface of the insulator layer, wherein the semiconductor chip is mounted on the lead by flip chip bonding, and is sealed in the insulator layer. Power module. 2. The semiconductor device according to claim 1, wherein the semiconductor chip has a first electrode formed on the lead side surface and a second electrode formed on the heat sink side surface. 2. The power module according to claim 1, wherein the second electrode is connected to the lead by flip chip bonding, and the second electrode is connected to the lead via an internal lead arranged in the insulator layer. . 3. The insulator layer according to claim 1, wherein the proportion of the inorganic filler is 70 to 95% by weight, and the proportion of the thermosetting resin composition is 5 to 30% by weight.
The power module according to 1. 4. The thermal conductivity of the insulator layer is 1 to 10 W
The power module according to any one of claims 1 to 3, wherein the power module has a range of / (m · K). 5. The thermal expansion coefficient of the insulator layer is from 8 to 20.
The power module according to claim 1, wherein the power is in the range of × 10 ⁻⁶ K ⁻¹ . 6. The insulating layer has an elastic modulus of 20 to 50 M.
The power module according to claim 1, wherein the power module has a range of Pa. 7. The power module according to claim 1, wherein an electronic component is mounted on a surface of the lead opposite to a surface on which the semiconductor chip is mounted. 8. The power module according to claim 1, wherein said leads are embedded in said insulator layer with at least a part thereof being exposed on a surface of said insulator layer. 9. A circuit board formed by laminating a wiring layer and a substrate layer, wherein the circuit board is embedded in the insulator layer with at least one of the wiring layers exposed on the surface of the insulator layer. A power module according to any one of claims 1 to 8. 10. The thermosetting resin composition contains a thermosetting resin, a curing agent and a curing accelerator.
A power module according to any one of the above. 11. The thermosetting resin composition, wherein the proportion of the thermosetting resin is 50 to 95% by weight, the proportion of the curing agent is 4.9 to 45% by weight, and the proportion of the curing accelerator is The power module according to claim 10, wherein the content is 0.1 to 5% by weight. 12. The thermosetting resin composition according to claim 1, wherein the thermosetting resin composition contains at least one thermosetting resin selected from an epoxy resin, a phenol resin, and a cyanate resin.
12. The power module according to any one of 11. 13. The power module according to claim 1, wherein the thermosetting resin composition contains an epoxy resin, a novolak resin, and imidazole. 14. The thermosetting resin composition, wherein the proportion of epoxy resin is 60 to 80% by weight, the proportion of novolak resin is 18 to 39.9% by weight, and the proportion of imidazole is 0.1 to 10% by weight. The power module according to claim 13, which is 2% by weight. 15. The method according to claim 15, wherein the inorganic filler is Al ₂ O ₃ , Si
O _2, MgO, power module according to any one of claims 1 to 14 is at least one selected from the group consisting of BN and AlN. 16. The average particle diameter of the inorganic filler is as follows:
The power module according to claim 1, wherein the power module has a range of 0.1 to 100 μm. 17. The power module according to claim 1, wherein the lead is at least one metal selected from the group consisting of copper, aluminum, nickel and iron. 18. The lead having a thickness of 0.05 to 1.
The power module according to any one of claims 1 to 17, which has a range of 00 mm. 19. A lead-side surface on the insulator layer side,
2. The method according to claim 1, wherein at least one metal plating layer selected from the group consisting of nickel, tin, solder and gold is formed.
19. The power module according to any one of claims 18 to 18. 20. The surface of the lead on the insulator layer side,
The power module according to any one of claims 1 to 19, which is roughened. 21. The power module according to claim 1, wherein the heat sink is made of aluminum or copper. 22. The power module according to claim 1, wherein the heat sink includes a radiation fin. 23. The power module according to claim 1, wherein a surface of the heat sink on the insulator layer side is roughened. 24. A step of forming a lead on a release carrier, a step of mounting a semiconductor chip on the lead by flip chip bonding, and a step of disposing an inorganic filler and a thermosetting resin composition on the release carrier. A step of forming an uncured insulator layer to cover the leads and the semiconductor chip, and a step of laminating a heat sink on the uncured insulator layer to form a laminate, A method for manufacturing a power module, comprising: a step of heating the laminate to cure the insulator layer; and a step of removing the release carrier. 25. The power module according to claim 24, wherein in the insulator layer, the proportion of the inorganic filler is 70 to 95% by weight, and the proportion of the thermosetting resin composition is 5 to 30% by weight. Manufacturing method. 26. The method according to claim 24, wherein the step of forming the insulator layer is a step of applying a paste containing the inorganic filler and the thermosetting resin composition on the release carrier. Method of manufacturing power module. 27. The method according to claim 2, wherein the application of the paste is performed by screen printing or metal mask printing.
7. The method for manufacturing a power module according to item 6. 28. The step of forming the insulator layer contains the inorganic filler and the thermosetting resin composition,
26. A step of laminating a flexible sheet in an uncured state on the release carrier.
3. The method for manufacturing a power module according to claim 1. 29. The mold release during the step of forming the insulator layer or after the step of forming the insulator layer and before the step of curing the insulator layer. The method for manufacturing a power module according to any one of claims 24 to 28, wherein the formed product formed on the carrier is exposed to a vacuum. 30. The method according to claim 24, further comprising, after the step of removing the release carrier, a step of mounting an electronic component on a surface of the lead opposite to the insulator layer side. Power module manufacturing method. 31. After the leads are formed on the release carrier, a circuit board formed by laminating a wiring layer and a substrate layer is disposed on the release carrier, and the insulator layer is attached to the circuit board. The method for manufacturing a power module according to any one of claims 24 to 30, wherein the power module is formed so as to cover. 32. The step of heating the laminate,
The heating temperature is in the range of 130 to 260 ° C.
31. The method for manufacturing a power module according to any one of the items 31. 33. The step of heating the laminate,
The method for manufacturing a power module according to any one of claims 24 to 32, wherein a pressure of 19.6 MPa or less is applied to the laminate. 34. The thermosetting resin composition contains a thermosetting resin, a curing agent and a curing accelerator.
34. The method for manufacturing a power module according to any one of items 33. 35. The thermosetting resin composition, wherein the proportion of the thermosetting resin is 50 to 95% by weight, the proportion of the curing agent is 4.9 to 45% by weight, and the proportion of the curing accelerator is The method for manufacturing a power module according to claim 34, wherein the content is 0.1 to 5% by weight. 36. The power according to claim 24, wherein the thermosetting resin composition contains at least one thermosetting resin selected from the group consisting of an epoxy resin, a phenol resin, and a cyanate resin. Module manufacturing method. 37. The method for manufacturing a power module according to claim 24, wherein the thermosetting resin composition contains a thermosetting resin that is liquid at room temperature. 38. The thermosetting resin which is liquid at room temperature is at least one resin selected from the group consisting of a bisphenol A epoxy resin, a bisphenol F epoxy resin and a liquid phenol resin. Power module manufacturing method. 39. The method according to claim 39, wherein the inorganic filler is Al ₂ O ₃ , Si
O _2, MgO, method for producing a power module according to any one of claims 24 to 38 is at least one selected from the group consisting of BN and AlN. 40. An average particle diameter of the inorganic filler,
The method for manufacturing a power module according to any one of claims 24 to 39, wherein the thickness is in a range of 0.1 to 100 µm. 41. The method for manufacturing a power module according to claim 24, wherein the lead is at least one metal selected from the group consisting of copper, aluminum, nickel and iron. 42. The lead having a thickness of 0.05 to 1.
The method for manufacturing a power module according to any one of claims 24 to 41, wherein the distance is in a range of 00 mm. 43. Before the step of forming the insulator layer,
Nickel on the surface of the lead that contacts the insulator layer,
43. The method for manufacturing a power module according to claim 24, wherein at least one type of metal plating layer selected from tin, solder, and gold is formed. 44. The method according to claim 1, wherein before the step of forming the insulator layer,
The method for manufacturing a power module according to any one of claims 24 to 43, wherein a surface of the lead in contact with the insulator layer is roughened. 45. The method for manufacturing a power module according to claim 24, wherein the heat sink is made of aluminum or copper. 46. The method for manufacturing a power module according to claim 24, wherein the heat sink includes a radiation fin. 47. The power module according to claim 24, wherein a surface of the heat sink in contact with the insulator layer is roughened before the step of laminating the heat sink on the insulator layer. Production method. 48. The method according to claim 24, wherein the release carrier is an organic film. 49. The method according to claim 48, wherein the release carrier is at least one organic film selected from the group consisting of polyphenylene oxide, polyimide, polyethylene, polyethylene terephthalate and aramid. 50. The method according to claim 24, wherein the release carrier is a metal foil. 51. The method for manufacturing a power module according to claim 50, wherein the release carrier is at least one metal foil selected from the group consisting of a copper foil, a nickel foil, and an aluminum foil.