JP3199599B2 - Metal-based multilayer circuit board - Google Patents

Metal-based multilayer circuit board

Info

Publication number
JP3199599B2
JP3199599B2 JP8700295A JP8700295A JP3199599B2 JP 3199599 B2 JP3199599 B2 JP 3199599B2 JP 8700295 A JP8700295 A JP 8700295A JP 8700295 A JP8700295 A JP 8700295A JP 3199599 B2 JP3199599 B2 JP 3199599B2
Authority
JP
Japan
Prior art keywords
circuit board
metal
insulating adhesive
layer
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP8700295A
Other languages
Japanese (ja)
Other versions
JPH08288604A (en
Inventor
直己 米村
俊樹 斉藤
誠 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP8700295A priority Critical patent/JP3199599B2/en
Priority to US08/629,229 priority patent/US6175084B1/en
Priority to EP96105663A priority patent/EP0738007A3/en
Priority to KR1019960010843A priority patent/KR100382631B1/en
Publication of JPH08288604A publication Critical patent/JPH08288604A/en
Priority to US09/593,059 priority patent/US6369332B1/en
Application granted granted Critical
Publication of JP3199599B2 publication Critical patent/JP3199599B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303Surface mounted components, e.g. affixing before soldering, aligning means, spacing means

Landscapes

  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は金属ベース多層回路基板
に関するものであって、特に発熱性の高いパワー電子素
子の搭載が可能で、信頼性に優れた金属ベース多層回路
基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal-based multi-layer circuit board, and more particularly to a metal-based multi-layer circuit board capable of mounting a heat-generating power electronic element and having excellent reliability.

【0002】[0002]

【従来の技術】近年、半導体搭載用の回路基板では高密
度実装化および高性能化が要求され、半導体素子の小型
化、高性能化、配線密度の微細化にともない、半導体素
子から発生した熱を如何に放散するかということが問題
となっている。
2. Description of the Related Art In recent years, high-density mounting and high performance have been required for a circuit board for mounting a semiconductor, and the heat generated from the semiconductor element has been increased due to the miniaturization, high performance, and fine wiring density of the semiconductor element. The problem is how to dissipate.

【0003】そこで、金属板上に絶縁層を介して導電性
金属箔を張り合わせた金属ベース回路基板が熱放散性に
優れており、電源分野を中心に使用されている。しか
し、金属ベース回路基板は金属板の上に薄い絶縁層を塗
布した構造であるので、通常使用されているガラスエポ
キシ基板に比べて寄生容量が一桁近く大きく、ノイズが
発生し易い。このために、電気回路設計が非常に複雑に
なり、かつ、制約も多い。
[0003] Therefore, a metal-based circuit board in which a conductive metal foil is adhered to a metal plate via an insulating layer is excellent in heat dissipation, and is used mainly in the field of power supplies. However, since the metal base circuit board has a structure in which a thin insulating layer is applied on a metal plate, the parasitic capacitance is nearly one digit larger than that of a commonly used glass epoxy board, and noise is likely to occur. For this reason, the electric circuit design becomes very complicated and has many restrictions.

【0004】このノイズ対策として、絶縁回路基板を上
層回路基板として金属板上に積層した金属ベース多層回
路基板が開示されている(特開昭58−9399号公
報、特開平5−327169号公報)。しかし、特開昭
58−9399号公報及び特開平5−327169号公
報開示の構造は、いずれも、金属板或いは無機充填剤を
含有する樹脂からなる絶縁層を塗布した金属板と上層回
路基板とを熱伝導性の悪いガラスエポキシ基板を積層し
た構造のために、発熱性の高い素子を搭載する場合に
は、熱の放散が不十分となり電子素子の温度が上昇し、
結果的には誤動作を生じるという問題があった。
As a countermeasure against this noise, a metal-based multilayer circuit board in which an insulating circuit board is laminated on a metal plate as an upper circuit board is disclosed (Japanese Patent Application Laid-Open Nos. 58-9399 and 5-327169). . However, the structures disclosed in JP-A-58-9399 and JP-A-5-327169 each include a metal plate or a metal plate coated with an insulating layer made of a resin containing an inorganic filler and an upper circuit board. Due to the structure of laminated glass epoxy substrates with poor heat conductivity, when mounting elements with high heat generation, heat dissipation is insufficient and the temperature of electronic elements rises,
As a result, there is a problem that a malfunction occurs.

【0005】また、上層回路基板に使用される絶縁層に
無機充填剤を充填した絶縁剤を使用し熱伝導性を向上し
たものも検討されているが、中程度のパワー電子素子に
対して放熱効果は認められるが、高発熱性電子素子にお
いては十分とは言えないし、加えてコスト的にも高いも
のになると推測される。
[0005] In addition, there has been studied an insulating layer used for an upper circuit board, in which an insulating material filled with an inorganic filler is used to improve the thermal conductivity. Although the effect is recognized, it cannot be said that it is sufficient for a high heat-generating electronic element, and in addition, it is presumed to be expensive.

【0006】[0006]

【発明が解決しようとする課題】本発明はかかる問題点
に鑑みてなされたものであって、優れた放熱性により回
路基板上に搭載された電子部品の温度上昇を防止でき、
信頼性に優れた金属ベース多層回路基板を提供するもの
である。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has an excellent heat radiation property to prevent an increase in the temperature of an electronic component mounted on a circuit board.
An object of the present invention is to provide a metal-based multilayer circuit board having excellent reliability.

【0007】[0007]

【課題を解決するための手段】本発明は、金属板上の絶
縁接着剤層上に、回路基板と発熱性電子部品とを搭載
した金属ベース多層回路基板であって、、前記回路基板
が前記絶縁接着剤層上に直接に設けられ、前記高発熱性
電子部品が高熱伝導接着剤を介して前記絶縁接着剤層に
設けられていることを特徴とする金属ベース多層回路基
板であり、又、前記絶縁接着剤層と前記高熱伝導性接着
剤との間に金属層を設けた前記の金属ベース多層回路基
板である。
According to the present invention, a circuit board and a high heat-generating electronic component are mounted on an insulating adhesive layer on a metal plate.
A metal-based multilayer circuit board, comprising:
Is provided directly on the insulating adhesive layer, and the
Electronic components are attached to the insulating adhesive layer via a high thermal conductive adhesive.
A metal base multilayer circuit board, characterized in that provided, also, which is the metal base multilayer circuit board having a metal layer between the insulating adhesive layer and the high thermal conductive adhesive.

【0008】更に、本発明は、前記絶縁接着剤層が酸化
アルミニウム、酸化珪素、窒化硼素のいずれかを含有す
るエポキシ樹脂からなることを特徴とする前記金属ベー
ス多層回路基板であり、加えて、前記回路基板が、少な
くとも2層以上の金属層が絶縁接着剤を介して積層され
ていることを特徴とする前記金属ベース多層回路基板で
ある。
Further, the present invention provides the metal-based multilayer circuit board, wherein the insulating adhesive layer is made of an epoxy resin containing any one of aluminum oxide, silicon oxide, and boron nitride. The circuit board is a metal-based multilayer circuit board, wherein at least two or more metal layers are laminated via an insulating adhesive.

【0009】以下、本発明を図を用いて説明する。図1
は本発明の金属ベース多層回路基板の一例を示す断面図
である。又、図2は本発明の請求項2に係わる金属ベー
ス多層基板の一例を示す断面図である。図1において、
金属層5A及び5Bを有し一部に開口部を有する回路基
板10が、金属板1上に絶縁接着剤層2を介して積層し
た構造を有するとともに、高発熱性電子部品4が絶縁接
着剤層2上に高熱伝導性接着剤3を介して搭載されてい
る。
The present invention will be described below with reference to the drawings. FIG.
1 is a cross-sectional view illustrating an example of a metal-based multilayer circuit board according to the present invention. FIG. 2 is a sectional view showing an example of the metal-based multilayer substrate according to claim 2 of the present invention. In FIG.
A circuit board 10 having metal layers 5A and 5B and partially having an opening has a structure in which the circuit board 10 is laminated on a metal plate 1 with an insulating adhesive layer 2 interposed therebetween. It is mounted on the layer 2 via a high thermal conductive adhesive 3.

【0010】図2は回路基板10の開口部に位置する絶
縁接着剤層2の上に、高発熱性電子部品4よりも伝熱面
積の大きな金属層6が形成されていて、その上に高発熱
性電子部品4が高熱伝導性接着剤3を介して搭載された
構造を有し、高発熱性電子部品4から発生した熱が金属
層6を通じてより容易に放散する構造となっている。
尚、金属層6は回路形成されていても、いなくてもよ
い。
FIG. 2 shows that a metal layer 6 having a larger heat transfer area than the high heat-generating electronic component 4 is formed on the insulating adhesive layer 2 located at the opening of the circuit board 10. The heat-generating electronic component 4 has a structure in which the heat-generating electronic component 4 is mounted via the highly heat-conductive adhesive 3, so that heat generated from the heat-generating electronic component 4 is more easily dissipated through the metal layer 6.
The metal layer 6 may or may not be formed with a circuit.

【0011】本発明において、高発熱性電子部品4とし
ては、容量200VA以上/動作周波数200kHzの
高周波トランス、容量100VA以上のダイオードブリ
ッジ等を意味する。本発明者らは、上記の高発熱性電子
部品を多層回路部分に搭載する場合に、回路間に存在す
る電気絶縁層が同時に熱の絶縁層として働くために熱放
散が充分でなく、電子部品の温度が上昇し短命となると
の知見を得て、又、前記の高発熱性電子部品を金属板1
上に配置する時にのみ、高発熱性電子部品から発生する
熱が充分に放散できるということを見いだし、本発明に
至ったものである。又、発熱量の小さな電子部品につい
ては、多層回路基板に要求される特性に応じて、多層回
路部分にも搭載できるし、本発明の如く、絶縁接着剤層
2の上に高熱伝導性接着剤3を用いて搭載することもで
きる。
In the present invention, the high heat-generating electronic component 4 means a high-frequency transformer having a capacity of 200 VA or more / operating frequency of 200 kHz, a diode bridge having a capacity of 100 VA or more. The present inventors have found that when the above-mentioned high heat-generating electronic component is mounted on a multilayer circuit portion, the electric insulating layer existing between the circuits simultaneously acts as a heat insulating layer, so that heat dissipation is not sufficient, That the high heat-generating electronic component is connected to the metal plate 1
It has been found that the heat generated from the high heat-generating electronic component can be sufficiently dissipated only when the electronic component is arranged on the upper side, and the present invention has been accomplished. In addition, electronic components having a small heat value can be mounted on a multilayer circuit portion according to the characteristics required of the multilayer circuit board. As in the present invention, a high heat conductive adhesive is provided on the insulating adhesive layer 2. 3 can be mounted.

【0012】本発明では、上述のように、高発熱性電子
部品4を回路基板10を介することなく、絶縁接着剤層
2上に配置することで、熱放散を助長し基板自身の温度
上昇を抑えることで、金属ベース多層回路基板全体の信
頼性を高め、長寿命を達成するものである。尚、上記高
発熱性電子部品は、多層回路基板に要求される特性に応
じて複数個を搭載しても良い。
In the present invention, as described above, the high heat-generating electronic component 4 is disposed on the insulating adhesive layer 2 without the interposition of the circuit board 10, thereby promoting heat dissipation and reducing the temperature rise of the board itself. This suppresses the reliability of the entire metal-based multilayer circuit board and achieves a long life. A plurality of the high heat-generating electronic components may be mounted according to the characteristics required for the multilayer circuit board.

【0013】絶縁接着剤層2は、無機質充填剤を含有す
る樹脂を金属板上に塗布後、プレス法やラミネーター法
により金属層と接合され層状に形成されるが、本発明で
は、酸化アルミニウム、酸化珪素、窒化硼素のいずれか
を含有するエポキシ樹脂で構成される。前記無機質充填
剤としては電気絶縁性、熱伝導性に優れ、樹脂への充填
性に優れるものが選択され、一般的には、構成粒子が1
50μm以下の丸みを帯びたもので、適当な粒度分布を
有する粉末が用いられる。又、配合割合は高い程、絶縁
接着剤層の熱伝導性を良好とするが、あまり高配合とす
ると樹脂との混合において気泡を巻き込んだり、接着性
が悪くなり熱伝導性がかえって低下する等の結果を招く
ので、通常は40〜80体積%が選択される。
The insulating adhesive layer 2 is formed by applying a resin containing an inorganic filler onto a metal plate and then joining the metal layer to the metal layer by a pressing method or a laminator method. It is composed of an epoxy resin containing either silicon oxide or boron nitride. As the inorganic filler, those having excellent electric insulation and thermal conductivity and excellent filling properties into resin are selected.
A powder having a roundness of 50 μm or less and having an appropriate particle size distribution is used. Also, the higher the blending ratio, the better the thermal conductivity of the insulating adhesive layer. However, if the blending ratio is too high, bubbles may be involved in mixing with the resin, or the adhesiveness may deteriorate and the thermal conductivity may decrease rather. Therefore, usually 40 to 80% by volume is selected.

【0014】前記無機充填剤として、酸化アルミニウ
ム、酸化ベリリウム、酸化珪素、酸化マグネシウム、酸
化カルシウム、窒化硼素、窒化珪素、窒化アルミニウム
などを用いることができる。このうち、酸化アルミニウ
ム、窒化珪素、窒化硼素が高熱伝導性で、高耐電圧性の
絶縁接着剤が得られるので望ましい。特に、粒子形状が
球状の酸化アルミニウム、酸化珪素を用いるとき、樹脂
に高充填できて、容易に高熱伝導性を経済的に達成でき
るという理由で望ましい。又、酸化アルミニウム、酸化
珪素、窒化硼素は得られる金属ベース多層回路基板に要
求される特性に応じ、単独若しくは2種類以上を混合し
て用いられる。
As the inorganic filler, aluminum oxide, beryllium oxide, silicon oxide, magnesium oxide, calcium oxide, boron nitride, silicon nitride, aluminum nitride and the like can be used. Of these, aluminum oxide, silicon nitride, and boron nitride are preferable because they provide an insulating adhesive having high thermal conductivity and high withstand voltage. In particular, when aluminum oxide or silicon oxide having a spherical particle shape is used, it is desirable because the resin can be highly filled and high thermal conductivity can be easily achieved economically. Aluminum oxide, silicon oxide, and boron nitride may be used alone or in combination of two or more depending on the characteristics required for the obtained metal-based multilayer circuit board.

【0015】前記樹脂としては、エポキシ樹脂、ポリイ
ミド樹脂、シリコーン樹脂、アクリル樹脂、フェノール
樹脂、ビスマレイミドトリアジン樹脂、或いは、各種エ
ンジニアリングプラスチック等が一般的であるが、これ
らの中で、エポキシ樹脂が電気絶縁性、金属との接着
性、耐熱性が優れているので好ましい。
As the resin, epoxy resin, polyimide resin, silicone resin, acrylic resin, phenol resin, bismaleimide triazine resin, various engineering plastics and the like are generally used. It is preferable because it has excellent insulation properties, adhesion to metals, and heat resistance.

【0016】エポキシ樹脂には、いろいろな品種が知ら
れているが、ビスフェノールA型エポキシ樹脂、ビスフ
ェノールF型エポキシ樹脂などのエポキシ樹脂や、末端
カルボキシル基含有ブタジエン・アクリルニトリル共重
合体等で変性した変性エポキシ樹脂、或いは、フェノー
ルノボラック、O−クレゾールノボラック等のノボラッ
ク型エポキシ樹脂などが、電気絶縁性、耐熱性などの点
で特に望ましい。
Various types of epoxy resins are known, but modified with epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin, butadiene / acrylonitrile copolymer having a terminal carboxyl group, and the like. A modified epoxy resin or a novolak-type epoxy resin such as phenol novolak or O-cresol novolak is particularly desirable in terms of electrical insulation, heat resistance, and the like.

【0017】次に、本発明における回路基板10として
は、少なくとも2層以上の金属層5A、5Bが絶縁接着
層8を介して積層された回路基板(以下両面樹脂基板と
いう)が熱放散に優れるので好ましい。しかし、所望さ
れる多層回路基板の特性により、上記両面基板樹脂基板
の他にガラスエポキシ樹脂回路基板、フェノール樹脂回
路基板、紙エポキシ樹脂回路基板等のリジット回路基
板、ポリイミド樹脂基板上に回路を描いたフレキシブル
回路基板が使用可能である。これらの基板の厚さは、熱
放散性をよくするために、60μm以下が好ましい。
又、表面を電気絶縁処理した金属板からなる金属ベース
回路基板そのまま或いは必要に応じ改善して用いるこ
ともできる。
Next, as the circuit board 10 of the present invention, a circuit board in which at least two or more metal layers 5A and 5B are laminated via an insulating adhesive layer 8 (hereinafter referred to as a double-sided resin board) is excellent in heat dissipation. It is preferred. However, depending on the characteristics of the desired multilayer circuit board, a circuit may be drawn on a rigid circuit board such as a glass epoxy resin circuit board, a phenol resin circuit board, a paper epoxy resin circuit board, or a polyimide resin board, in addition to the double-sided board resin board. Flexible circuit boards can be used. The thickness of these substrates is preferably 60 μm or less in order to improve heat dissipation.
It may also be used to improve response of the metal base circuit board comprising a surface of an electrically insulated metal plate as it is or needs.

【0018】前記両面樹脂基板を構成する絶縁接着剤8
は、酸化アルミニウム、窒化硼素、酸化珪素、酸化マグ
ネシウム、窒化アルミニウム等の電気絶縁性であって、
しかも熱伝導性の高い無機充填剤を含有する。前記の無
機充填剤のうち、酸化アルミニウム、窒化硼素、酸化珪
素は電気絶縁性、熱伝導性、経済性の観点から選択され
る。又、絶縁接着剤8を構成する樹脂としては、エポキ
シ樹脂、ポリイミド樹脂、フェノール樹脂等が挙げられ
るが、金属との接着力に富むエポキシ樹脂が特に好まし
い。
The insulating adhesive 8 constituting the double-sided resin substrate
Is an electrically insulating material such as aluminum oxide, boron nitride, silicon oxide, magnesium oxide, aluminum nitride,
Moreover, it contains an inorganic filler having high thermal conductivity. Among the inorganic fillers, aluminum oxide, boron nitride, and silicon oxide are selected from the viewpoints of electrical insulation, thermal conductivity, and economy. Examples of the resin forming the insulating adhesive 8 include an epoxy resin, a polyimide resin, and a phenol resin, and an epoxy resin having a high adhesive strength to a metal is particularly preferable.

【0019】本発明の高熱伝導接着剤3としては、エポ
キシ樹脂、ポリイミド樹脂、シリコーン樹脂、アクリル
樹脂、フェノール樹脂、ビスマレイミドトリアジン樹
脂、或いは、各種エンジニアリングプラスチック等が上
げられる。これらの中で、エポキシ樹脂、ポリイミド樹
脂、ビスマレイミドトリアジン樹脂、シリコーン樹脂は
電気性が高く、耐熱性が優れているので好ましい。又、
高熱伝導接着剤は接着性能が低下しない限度で、酸化ア
ルミニウム、酸化珪素、窒化硼素等を初めとする無機質
充填材料を含有させることもできる。
Examples of the high thermal conductive adhesive 3 of the present invention include epoxy resin, polyimide resin, silicone resin, acrylic resin, phenol resin, bismaleimide triazine resin, and various engineering plastics. Of these, epoxy resins, polyimide resins, bismaleimide triazine resins, and silicone resins are preferred because of their high electrical properties and excellent heat resistance. or,
The high heat conductive adhesive may contain an inorganic filler material such as aluminum oxide, silicon oxide, boron nitride, etc. as long as the adhesive performance is not reduced.

【0020】本発明の金属ベース多層回路基板に用いる
金属板1としては、良熱伝導性を持つアルミニウムおよ
びアルミニウム合金、銅および銅合金、鉄および鉄合金
等あるいは銅/鉄−ニッケル系合金/銅、アルミニウム
/鉄−ニッケル系合金/アルミニウム等の複合材料等が
使用可能である。また、ベース金属板1の厚みとして
は、特に制限はないが0.5mm〜3.0mmが一般に
用いられる。
Examples of the metal plate 1 used for the metal-based multilayer circuit board of the present invention include aluminum and aluminum alloys, copper and copper alloys, iron and iron alloys, and copper / iron-nickel alloys / copper having good thermal conductivity. And a composite material such as aluminum / iron-nickel alloy / aluminum can be used. The thickness of the base metal plate 1 is not particularly limited, but is generally 0.5 mm to 3.0 mm.

【0021】又、金属層6及び金属層5A、5Bの材質
は銅、アルミニウム、ニッケル、鉄、錫、銀、チタニウ
ムのいずれか、または、これらの金属を2種類以上含む
合金及びそれぞれの金属を使用したクラッド箔が用いら
れる。また、この時の箔の製造方法は電解法でも圧延法
で作製したものでもよく、箔上にはNiメッキ、Ni+
Auメッキ、半田メッキなどの金属メッキがほどこされ
ていてもかまわない。
The material of the metal layer 6 and the metal layers 5A and 5B may be any one of copper, aluminum, nickel, iron, tin, silver and titanium, or an alloy containing two or more of these metals and each metal. The used clad foil is used. The method of manufacturing the foil at this time may be an electrolytic method or a rolling method. Ni plating, Ni +
Metal plating such as Au plating or solder plating may be applied.

【0022】以下、実施例に基づき、発明を更に詳しく
説明する。
Hereinafter, the present invention will be described in more detail with reference to examples.

【実施例】【Example】

〔実施例1〕厚さ35μmの銅箔で描かれた所望の回路
を両面に有し、ガラスエポキシ材の厚さが60μmのガ
ラスエポキシ回路基板(松下電工(株)製;R−176
6)を用意しスルーホールを形成した。次に、510m
m×510mm×1.5mmのアルミニウム板上に酸化
珪素(電気化学工業(株)製;FS−784)を72体
積%含有するビスフェノールF型エポキシ樹脂(油化シ
ェル(株)製;エピコート807)を絶縁接着剤として
用い、アミン系硬化剤を加え、150μmの厚みになる
ように塗布し、張り合わせ加熱硬化した。この基板原板
を用いて、基板サイズ100×150mm、出力電力1
50W/動作周波数300kHzのDC/DCコンバー
タを製作した。電子制御部品は基板の寄生容量の影響を
低減するためにガラスエポキシ回路基板上の回路上に配
置し、高発熱性部品である高周波トランス(TDK
(株)製/容量150VA)を絶縁接着剤上にシリコン
接着剤で固定した。この装置を室温25℃の環境で5h
r動作させ、基板裏面の温度を測定した結果112℃で
あり、又、この間、機能的には安定に動作した。
Example 1 A glass epoxy circuit board (manufactured by Matsushita Electric Works Co., Ltd .; R-176) having a desired circuit drawn on a copper foil having a thickness of 35 μm on both sides and a glass epoxy material having a thickness of 60 μm.
6) was prepared and through holes were formed. Next, 510m
Bisphenol F type epoxy resin (manufactured by Yuka Shell Co .; Epicoat 807) containing 72 vol% of silicon oxide (manufactured by Denki Kagaku Kogyo KK) on an mx 510 mm x 1.5 mm aluminum plate Was used as an insulating adhesive, an amine-based curing agent was added, and the mixture was applied so as to have a thickness of 150 μm, and bonded and cured by heating. Using this original substrate, the substrate size is 100 × 150 mm, the output power is 1
A DC / DC converter with 50 W / operating frequency of 300 kHz was manufactured. The electronic control components are placed on the circuit on the glass epoxy circuit board in order to reduce the effect of the parasitic capacitance of the board.
(Capacity: 150 VA) was fixed on the insulating adhesive with a silicone adhesive. This device is placed in a room temperature of 25 ° C for 5 hours.
As a result of measuring the temperature of the back surface of the substrate at 112 ° C., the temperature was 112 ° C. During this time, the device operated functionally stably.

【0023】〔実施例2〕実施例1と同一の操作で基板
原板を用意した。この基板原板を用いて、基板サイズ1
00×150mm、出力電力150W/動作周波数30
0kHzのDC/DCコンバータを製作した。電子制御
部品は基板の寄生容量の影響を低減するためにガラスエ
ポキシ回路基板上の回路上に配置し、高発熱性部品であ
る高周波トランス(TDK製/容量150VA)を絶縁
接着剤上の回路上にシリコン接着剤で固定した。この
時、高周波トランスと回路パターンは電気的に絶縁され
ている。この装置を室温25℃の環境で5hr動作さ
せ、基板裏面の温度を測定した結果107℃であり、機
能的にも安定に動作した。
Example 2 An original substrate was prepared in the same manner as in Example 1. Using this substrate original, a substrate size of 1
00 × 150 mm, output power 150 W / operating frequency 30
A 0 kHz DC / DC converter was manufactured. The electronic control components are placed on the circuit on the glass epoxy circuit board to reduce the influence of the parasitic capacitance of the board, and the high heat generating component high-frequency transformer (made by TDK / capacity 150VA) is placed on the circuit on the insulating adhesive. Was fixed with a silicone adhesive. At this time, the high frequency transformer and the circuit pattern are electrically insulated. This device was operated for 5 hours in an environment at room temperature of 25 ° C., and the temperature of the back surface of the substrate was measured. As a result, the temperature was 107 ° C., and the device stably operated.

【0024】〔実施例3〕厚さ35μmの銅箔で描かれ
た所望の回路を両面に有し、酸化アルミニウムを72体
積%含有するビスフェノールA型エポキシ樹脂(油化シ
ェル(株)製;エピコート828)をアミン系硬化剤で
熱硬化した厚みが100μmである両面樹脂基板を用意
し、スルーホールを形成した。次に、510mm×51
0mm×1.5mmのアルミニウム板上に酸化アルミニ
ウムを72体積%含有するビスフェノールF型エポキシ
樹脂を絶縁性接着剤として用い、アミン系硬化剤を加
え、150μmの厚みになるように塗布し、張り合わせ
加熱硬化した。次に、この基板原板を用いて、基板サイ
ズ100×150mm、出力電力250W/動作周波数
300kHzのDC/DCコンバータを製作した。電子
制御部品は基板の寄生容量の影響を低減するために両面
樹脂基板上の回路上に配置し、高発熱性部品である高周
波トランス(TDK製/容量250VA))を絶縁接着
剤上にシリコン接着剤で固定した。この装置を室温25
℃の環境で5hr動作させ、基板裏面の温度を測定した
結果108℃であり、機能的にも安定に動作した。
Example 3 Bisphenol A type epoxy resin having a desired circuit drawn on a copper foil with a thickness of 35 μm on both sides and containing 72% by volume of aluminum oxide (manufactured by Yuka Shell Co., Ltd .; Epicoat 828) was thermally cured with an amine-based curing agent to prepare a double-sided resin substrate having a thickness of 100 μm, and through holes were formed. Next, 510 mm x 51
A bisphenol F type epoxy resin containing 72% by volume of aluminum oxide was used as an insulating adhesive on an aluminum plate of 0 mm × 1.5 mm, an amine-based curing agent was added, and the mixture was applied to a thickness of 150 μm and heated by laminating. Cured. Next, a DC / DC converter having a substrate size of 100 × 150 mm, an output power of 250 W, and an operating frequency of 300 kHz was manufactured using this substrate plate. Electronic control components are placed on the circuit on the double-sided resin substrate to reduce the influence of the parasitic capacitance of the substrate, and a high-frequency heat-generating component high-frequency transformer (made by TDK / capacity 250 VA) is bonded to the insulating adhesive with silicon. It was fixed with the agent. This device is placed at room temperature 25
The device was operated for 5 hours in an environment of ° C., and the temperature of the back surface of the substrate was measured. As a result, the temperature was 108 ° C., and the device stably operated.

【0025】〔実施例4〕厚さ35μmの銅箔で描かれ
た所望の回路を両面に有し、酸化珪素を72体積%含有
するビスフェノールF型エポキシ樹脂をアミン系硬化剤
で熱硬化した厚みが100μmである両面樹脂基板を用
意し、スルーホールを形成した。次に、510mm×5
10mm×1.5mmのアルミニウム板上に酸化珪素を
36体積%と窒化硼素36体積%を含有するビスフェノ
ールF型エポキシ樹脂を絶縁性接着剤として用い、アミ
ン系硬化剤を加え、150μmの厚みになるように塗布
し、張り合わせ加熱硬化した。この基板原板を用いて、
基板サイズ100×150mm、出力電力250W/動
作周波数300kHzのDC/DCコンバータを製作し
た。電子制御部品は基板の寄生容量の影響を低減するた
めに両面樹脂基板上の回路パターンに配置し、高発熱性
電子部品である高周波トランス(TDK製/容量250
VA)を絶縁接着剤上の回路上にシリコン接着剤で固定
した。この装置を室温25℃の環境で5hr動作させ、
基板裏面の温度を測定した結果105℃であり、機能的
にも安定に動作した。
Example 4 A bisphenol F type epoxy resin having a desired circuit drawn on a copper foil with a thickness of 35 μm on both sides and containing 72% by volume of silicon oxide was thermally cured with an amine curing agent. Was prepared and a through hole was formed. Next, 510mm × 5
A bisphenol F-type epoxy resin containing 36% by volume of silicon oxide and 36% by volume of boron nitride is used as an insulating adhesive on a 10 mm × 1.5 mm aluminum plate, and an amine-based curing agent is added to make a thickness of 150 μm. And heat-cured together. Using this base plate,
A DC / DC converter having a substrate size of 100 × 150 mm, output power of 250 W / operating frequency of 300 kHz was manufactured. The electronic control components are arranged in a circuit pattern on a double-sided resin substrate in order to reduce the influence of the parasitic capacitance of the substrate.
VA) was fixed on the circuit on the insulating adhesive with a silicone adhesive. This device was operated for 5 hours in an environment at a room temperature of 25 ° C.,
As a result of measuring the temperature of the back surface of the substrate, the temperature was 105 ° C., and the device stably operated.

【0026】〔比較例1〕厚さ35μmの銅箔で描かれ
た所望の回路を両面に有し、ガラスエポキシ材の厚さが
60μmのガラスエポキシ回路基板を用意しスルーホー
ルを形成した。次に、510mm×510mm×1.5
mmのアルミニウム板上に酸化珪素を72体積%含有す
るビスフェノールF型エポキシ樹脂を絶縁接着剤として
用い、アミン系硬化剤を加え、150μmの厚みになる
ように塗布し、張り合わせ加熱硬化した。この基板原板
を用いて、基板サイズ100×150mm、出力電力1
50W/動作周波数300kHzのDC/DCコンバー
タを製作した。電子制御部品はガラスエポキシ回路基板
上の回路上に配置し、高発熱性電子部品である高周波ト
ランス(TDK(株)/容量150VA)もガラスエポ
キシ回路基板上にシリコン接着剤で固定した。この装置
を室温25℃の環境で5hr動作させ、基板裏面の温度
を測定した結果163℃であり、出力電圧の変動が大き
く、動作が不安定であった。
Comparative Example 1 A glass epoxy circuit board having a desired circuit drawn on a copper foil having a thickness of 35 μm on both sides and a glass epoxy material having a thickness of 60 μm was prepared and through holes were formed. Next, 510 mm x 510 mm x 1.5
A bisphenol F-type epoxy resin containing 72% by volume of silicon oxide was used as an insulating adhesive on an aluminum plate having a thickness of 150 mm, an amine-based curing agent was added, the mixture was applied to a thickness of 150 μm, and bonded and heat-cured. Using this substrate plate, a substrate size of 100 × 150 mm and an output power of 1
A DC / DC converter with 50 W / operating frequency of 300 kHz was manufactured. The electronic control parts were arranged on a circuit on a glass epoxy circuit board, and a high-frequency heat-generating high-frequency transformer (TDK / capacity 150 VA) was also fixed on the glass epoxy circuit board with a silicon adhesive. The apparatus was operated for 5 hours in an environment at room temperature of 25 ° C., and the temperature of the back surface of the substrate was measured.

【0027】〔比較例2〕厚さ35μmの銅箔で描かれ
た所望の回路を両面に有し、酸化珪素を72体積%含有
するビスフェノールF型エポキシ樹脂をアミン系硬化剤
で熱硬化した厚みが100μmである両面樹脂基板を用
意し、スルーホールを形成した。次に、510mm×5
10mm×1.5mmのアルミニウム板上に酸化珪素を
72体積%含有するビスフェノールF型エポキシ樹脂を
絶縁性接着剤として用い、アミン系硬化剤を加え、15
0μmの厚みになるように塗布し、張り合わせ加熱硬化
した。この基板原板を用いて、基板サイズ100×15
0mm、出力電力250W/動作周波数300kHzの
DC/DCコンバータを製作した。電子制御部品は両面
樹脂基板上の回路パターンに配置し、高発熱性電子部品
である高周波トランス(TDK(株)製/容量250V
A)も両面樹脂基板の上層回路上にシリコン接着剤で固
定した。この装置を室温25℃の環境で5hr動作さ
せ、基板裏面の温度を測定した結果165℃であり、出
力電圧の変動が大きく動作が不安定であった。
Comparative Example 2 Bisphenol F type epoxy resin having a desired circuit drawn on a copper foil of 35 μm thickness on both sides and containing 72% by volume of silicon oxide was thermally cured with an amine curing agent. Was prepared and a through hole was formed. Next, 510mm × 5
A bisphenol F-type epoxy resin containing 72% by volume of silicon oxide was used as an insulating adhesive on a 10 mm × 1.5 mm aluminum plate, and an amine-based curing agent was added.
It was applied so as to have a thickness of 0 μm, and was laminated and cured by heating. Using this substrate original, a substrate size of 100 × 15
A DC / DC converter of 0 mm, output power 250 W / operating frequency 300 kHz was manufactured. The electronic control components are arranged in a circuit pattern on a double-sided resin substrate, and a high-heat-generating electronic component, a high-frequency transformer (manufactured by TDK Corporation / capacity: 250 V)
A) was also fixed on the upper layer circuit of the double-sided resin substrate with a silicone adhesive. The apparatus was operated for 5 hours in an environment at room temperature of 25 ° C., and the temperature of the back surface of the substrate was measured.

【0028】以下の実施例1〜4及び比較例1、2の結
果を表1に一覧する。
The results of Examples 1 to 4 and Comparative Examples 1 and 2 are listed in Table 1.

【0029】[0029]

【表1】 [Table 1]

【0030】[0030]

【発明の効果】本発明によれば、優れた放熱性により回
路基板上に搭載された電子部品の温度上昇を防止でき、
信頼性に優れる金属ベース多層回路基板を提供できる。
According to the present invention, it is possible to prevent an increase in the temperature of electronic components mounted on a circuit board due to excellent heat dissipation.
A highly reliable metal-based multilayer circuit board can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の金属ベース多層回路基板の一例を示す
断面図。
FIG. 1 is a sectional view showing an example of a metal-based multilayer circuit board according to the present invention.

【図2】本発明の金属ベース多層回路基板の他の一例を
示す断面図。
FIG. 2 is a sectional view showing another example of the metal-based multilayer circuit board of the present invention.

【符号の説明】[Explanation of symbols]

1 金属板 2 絶縁接着剤層 3 高熱伝導性接着剤 4 高発熱性電子部品 5A,5B 金属層 6 金属層 7 制御IC素子 8 回路基板の基材 (両面樹脂基板の絶縁接着層) 9 発熱性電子部品 10 回路基板 11 ボンディング用ワイヤー REFERENCE SIGNS LIST 1 metal plate 2 insulating adhesive layer 3 high heat conductive adhesive 4 high heat-generating electronic component 5A, 5B metal layer 6 metal layer 7 control IC element 8 substrate of circuit board (insulating adhesive layer of double-sided resin board) 9 heat generation Electronic component 10 Circuit board 11 Wire for bonding

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H05K 1/05 C09J 163/00 H05K 1/18 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) H05K 1/05 C09J 163/00 H05K 1/18

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】金属板上の絶縁接着剤層上に、回路基板と
発熱性電子部品とを搭載した金属ベース多層回路基板
であって、、前記回路基板が前記絶縁接着剤層上に直接
に設けられ、前記高発熱性電子部品が高熱伝導接着剤を
介して前記絶縁接着剤層に設けられていることを特徴と
する金属ベース多層回路基板。
1. A circuit board on an insulating adhesive layer on a metal plate.
Metal-based multilayer circuit board with high heat-generating electronic components
Wherein the circuit board is directly on the insulating adhesive layer
The high heat-generating electronic component is provided with a high heat conductive adhesive.
A metal-based multi-layer circuit board, wherein the metal-based multi-layer circuit board is provided on the insulating adhesive layer .
【請求項2】前記絶縁接着剤層と前記高熱伝導性接着剤
との間に金属層を設けたことを特徴とする請求項1記載
の金属ベース多層回路基板。
2. The metal-based multilayer circuit board according to claim 1, wherein a metal layer is provided between the insulating adhesive layer and the high thermal conductive adhesive.
【請求項3】前記絶縁接着剤層が酸化アルミニウム、酸
化珪素、窒化硼素のいずれかを含有するエポキシ樹脂か
らなることを特徴とする請求項1又は2記載の金属ベー
ス多層回路基板。
3. The metal-based multilayer circuit board according to claim 1, wherein said insulating adhesive layer is made of an epoxy resin containing any one of aluminum oxide, silicon oxide, and boron nitride.
【請求項4】前記回路基板が、少なくとも2層以上の金
属層が絶縁接着剤を介して積層されていることを特徴と
する請求項1記載の金属ベース多層回路基板。
4. The metal-based multilayer circuit board according to claim 1, wherein the circuit board has at least two metal layers laminated via an insulating adhesive.
JP8700295A 1995-04-12 1995-04-12 Metal-based multilayer circuit board Expired - Fee Related JP3199599B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP8700295A JP3199599B2 (en) 1995-04-12 1995-04-12 Metal-based multilayer circuit board
US08/629,229 US6175084B1 (en) 1995-04-12 1996-04-08 Metal-base multilayer circuit substrate having a heat conductive adhesive layer
EP96105663A EP0738007A3 (en) 1995-04-12 1996-04-10 Metal-base multilayer circuit substrate
KR1019960010843A KR100382631B1 (en) 1995-04-12 1996-04-10 Metal-based multilayer circuit board and semiconductor module having the same
US09/593,059 US6369332B1 (en) 1995-04-12 2000-06-13 Metal-base multilayer circuit substrate with heat conducting adhesive

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JP8700295A JP3199599B2 (en) 1995-04-12 1995-04-12 Metal-based multilayer circuit board

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JPH08288604A JPH08288604A (en) 1996-11-01
JP3199599B2 true JP3199599B2 (en) 2001-08-20

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KR101012404B1 (en) * 2008-09-09 2011-02-09 삼성전기주식회사 fuel cell power generation system
JP7406372B2 (en) * 2017-12-08 2023-12-27 積水化学工業株式会社 Laminated bodies and electronic devices

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