JP3238760B2 - 密結合超格子レーザ−変調器一体化素子 - Google Patents
密結合超格子レーザ−変調器一体化素子Info
- Publication number
- JP3238760B2 JP3238760B2 JP26056392A JP26056392A JP3238760B2 JP 3238760 B2 JP3238760 B2 JP 3238760B2 JP 26056392 A JP26056392 A JP 26056392A JP 26056392 A JP26056392 A JP 26056392A JP 3238760 B2 JP3238760 B2 JP 3238760B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- modulator
- wavelength
- superlattice
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010521 absorption reaction Methods 0.000 claims description 42
- 238000000407 epitaxy Methods 0.000 claims description 30
- 230000005684 electric field Effects 0.000 claims description 27
- 230000000694 effects Effects 0.000 claims description 18
- 230000007704 transition Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims 3
- 229910001325 element alloy Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 230000005699 Stark effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- GFXQUCWFEPCALC-UHFFFAOYSA-N 1-(4-isothiocyanato-2-nitrophenyl)imidazole Chemical compound [O-][N+](=O)C1=CC(N=C=S)=CC=C1N1C=NC=C1 GFXQUCWFEPCALC-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 241001495482 Aeonium arboreum Species 0.000 description 1
- 241000905947 Anabas Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000459 effect on growth Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
- G02F1/0158—Blue-shift of the absorption band
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9111046A FR2681191A1 (fr) | 1991-09-06 | 1991-09-06 | Composant integre laser-modulateur a super-reseau tres couple. |
| FR9111046 | 1991-09-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0645585A JPH0645585A (ja) | 1994-02-18 |
| JP3238760B2 true JP3238760B2 (ja) | 2001-12-17 |
Family
ID=9416711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26056392A Expired - Fee Related JP3238760B2 (ja) | 1991-09-06 | 1992-09-04 | 密結合超格子レーザ−変調器一体化素子 |
Country Status (5)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06204454A (ja) * | 1992-12-28 | 1994-07-22 | Mitsubishi Electric Corp | 光変調器付半導体レーザ及びその製造方法 |
| JP2536714B2 (ja) * | 1993-03-03 | 1996-09-18 | 日本電気株式会社 | 光変調器集積型多重量子井戸構造半導体レ―ザ素子 |
| CA2121405C (en) * | 1993-04-30 | 1999-03-16 | David Andrew Barclay Miller | Tunable lasers based on absorbers in standing waves |
| FR2706079B1 (fr) * | 1993-06-02 | 1995-07-21 | France Telecom | Composant intégré monolithique laser-modulateur à structure multi-puits quantiques. |
| JPH0738204A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 半導体光デバイス及びその製造方法 |
| US5418800A (en) * | 1993-10-27 | 1995-05-23 | Yeda Research And Development Co. Ltd. | Reduced linewidth from an electrically coupled two section semiconductor laser |
| US5548607A (en) * | 1994-06-08 | 1996-08-20 | Lucent Technologies, Inc. | Article comprising an integrated laser/modulator combination |
| US5521738A (en) * | 1994-06-30 | 1996-05-28 | At&T Corp. | Data encoded optical pulse generator |
| US5754714A (en) * | 1994-09-17 | 1998-05-19 | Kabushiki Kaisha Toshiba | Semiconductor optical waveguide device, optical control type optical switch, and wavelength conversion device |
| DE19624514C1 (de) * | 1996-06-19 | 1997-07-17 | Siemens Ag | Laserdiode-Modulator-Kombination |
| SE507376C2 (sv) * | 1996-09-04 | 1998-05-18 | Ericsson Telefon Ab L M | Våglängdsavstämbar laseranordning |
| DE19652529A1 (de) * | 1996-12-17 | 1998-06-18 | Siemens Ag | Optoelektronisches Bauelement mit MQW-Strukturen |
| FR2758669B1 (fr) * | 1997-01-23 | 1999-02-19 | Alsthom Cge Alcatel | Procede de modulation et modulateur optique a semi conducteur |
| JPH10335751A (ja) * | 1997-06-03 | 1998-12-18 | Mitsubishi Electric Corp | 半導体レーザ装置およびその製造方法 |
| US6295308B1 (en) | 1999-08-31 | 2001-09-25 | Corning Incorporated | Wavelength-locked external cavity lasers with an integrated modulator |
| JP4585171B2 (ja) * | 2001-01-30 | 2010-11-24 | マイクロソフト インターナショナル ホールディングス ビイ．ヴイ． | 光変調器 |
| US6574260B2 (en) | 2001-03-15 | 2003-06-03 | Corning Lasertron Incorporated | Electroabsorption modulated laser |
| DE10135958B4 (de) | 2001-07-24 | 2008-05-08 | Finisar Corp., Sunnyvale | Elektroabsorptionsmodulator, Modulator-Laser-Vorrichtung und Verfahren zum Herstellen eines Elektroabsorptionsmodulators |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1543405A (en) * | 1975-03-29 | 1979-04-04 | Licentia Gmbh | Method of and arrangement for producing coherent mode radiation |
| JPS59165480A (ja) * | 1983-03-10 | 1984-09-18 | Nec Corp | 半導体発光素子 |
| HUT42101A (en) * | 1985-01-07 | 1987-06-29 | Sandoz Ag | Process for preparing stomatostatine derivatives and pharmaceutical compositions containing such compounds |
| JPS61160987A (ja) * | 1985-01-09 | 1986-07-21 | Nec Corp | 集積型半導体光素子とその製造方法 |
| FR2607628B1 (fr) * | 1986-11-27 | 1989-03-17 | Centre Nat Rech Scient | Modulateur optique a superreseau |
| US4905253A (en) * | 1989-01-27 | 1990-02-27 | American Telephone And Telegraph Company | Distributed Bragg reflector laser for frequency modulated communication systems |
| FR2655433B1 (fr) * | 1989-12-01 | 1992-06-26 | France Etat | Procede et dispositif de modulation electro-optique, utilisant la transition oblique a basse energie d'un super-reseau tres couple. |
-
1991
- 1991-09-06 FR FR9111046A patent/FR2681191A1/fr active Granted
-
1992
- 1992-09-03 EP EP92402408A patent/EP0531214B1/fr not_active Expired - Lifetime
- 1992-09-03 DE DE69203998T patent/DE69203998T2/de not_active Expired - Fee Related
- 1992-09-04 JP JP26056392A patent/JP3238760B2/ja not_active Expired - Fee Related
- 1992-09-04 US US07/941,260 patent/US5305343A/en not_active Expired - Lifetime
Non-Patent Citations (3)
| Title |
|---|
| Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．４８［１］（１９８６）ｐ．１−３ |
| Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．５３［２６］（１９８８）ｐ．２６３２−２６３４ |
| Ｐｈｙｓ．Ｒｅｖ．Ｌｅｔｔ．６０［３］（１９８８）ｐ．２２０−２２３ |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2681191A1 (fr) | 1993-03-12 |
| JPH0645585A (ja) | 1994-02-18 |
| US5305343A (en) | 1994-04-19 |
| DE69203998D1 (de) | 1995-09-14 |
| DE69203998T2 (de) | 1996-03-21 |
| EP0531214A1 (fr) | 1993-03-10 |
| EP0531214B1 (fr) | 1995-08-09 |
| FR2681191B1 (US07709020-20100504-C00041.png) | 1995-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3238760B2 (ja) | 密結合超格子レーザ−変調器一体化素子 | |
| US5680411A (en) | Integrated monolithic laser-modulator component with multiple quantum well structure | |
| US4817110A (en) | Semiconductor laser device | |
| US5953479A (en) | Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration | |
| US5987046A (en) | Optical semiconductor device and a method of manufacturing the same | |
| US7859745B2 (en) | Semiconductor optical amplifying device, semiconductor optical amplifying system and semiconductor optical integrated element | |
| EP0645858B1 (en) | Strained quantum well structure having variable polarization dependence and optical device inducing the strained quantum well structure | |
| EP0400559B1 (en) | Semiconductor optical device | |
| US4815087A (en) | High speed stable light emitting semiconductor device with low threshold current | |
| US6075801A (en) | Semiconductor laser with wide side of tapered light gain region | |
| EP0390167B1 (en) | Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same | |
| US8687269B2 (en) | Opto-electronic device | |
| JPH04218994A (ja) | 半導体発光装置 | |
| US6885085B2 (en) | Semiconductor laser device | |
| US6728282B2 (en) | Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades | |
| US6925103B2 (en) | Gain-coupled DFB laser diode | |
| US5841151A (en) | Quasi type II semiconductor quantum well device | |
| JPH03236276A (ja) | 光機能素子 | |
| JPH0716079B2 (ja) | 半導体レ−ザ装置 | |
| JPH09171162A (ja) | 半導体光変調器 | |
| JPH09179080A (ja) | 光デバイス | |
| JP3087129B2 (ja) | 光変調器 | |
| US6587492B2 (en) | Bipolar cascade arrow laser | |
| JP2528886B2 (ja) | 半導体発光装置 | |
| JP3204969B2 (ja) | 半導体レーザ及び光通信システム |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010828 |
|
| LAPS | Cancellation because of no payment of annual fees |