DE69203998T2 - Monolithisch integrierte Laserdioden-Modulator mit einem stark gekoppelten Übergitter. - Google Patents

Monolithisch integrierte Laserdioden-Modulator mit einem stark gekoppelten Übergitter.

Info

Publication number
DE69203998T2
DE69203998T2 DE69203998T DE69203998T DE69203998T2 DE 69203998 T2 DE69203998 T2 DE 69203998T2 DE 69203998 T DE69203998 T DE 69203998T DE 69203998 T DE69203998 T DE 69203998T DE 69203998 T2 DE69203998 T2 DE 69203998T2
Authority
DE
Germany
Prior art keywords
laser diode
monolithically integrated
integrated laser
strongly coupled
diode modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69203998T
Other languages
English (en)
Other versions
DE69203998D1 (de
Inventor
Michel Allovon
Erwan Bigan
Jean-Christophe Harmand
Paul Voisin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Orange SA
Original Assignee
Centre National de la Recherche Scientifique CNRS
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, France Telecom SA filed Critical Centre National de la Recherche Scientifique CNRS
Publication of DE69203998D1 publication Critical patent/DE69203998D1/de
Application granted granted Critical
Publication of DE69203998T2 publication Critical patent/DE69203998T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G02F1/0158—Blue-shift of the absorption band
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69203998T 1991-09-06 1992-09-03 Monolithisch integrierte Laserdioden-Modulator mit einem stark gekoppelten Übergitter. Expired - Fee Related DE69203998T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9111046A FR2681191A1 (fr) 1991-09-06 1991-09-06 Composant integre laser-modulateur a super-reseau tres couple.

Publications (2)

Publication Number Publication Date
DE69203998D1 DE69203998D1 (de) 1995-09-14
DE69203998T2 true DE69203998T2 (de) 1996-03-21

Family

ID=9416711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69203998T Expired - Fee Related DE69203998T2 (de) 1991-09-06 1992-09-03 Monolithisch integrierte Laserdioden-Modulator mit einem stark gekoppelten Übergitter.

Country Status (5)

Country Link
US (1) US5305343A (de)
EP (1) EP0531214B1 (de)
JP (1) JP3238760B2 (de)
DE (1) DE69203998T2 (de)
FR (1) FR2681191A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897993B2 (en) 2001-07-24 2005-05-24 Infineon Technologies Ag Electroabsorption modulator, modulator laser device and method for producing an electroabsorption modulator

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204454A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 光変調器付半導体レーザ及びその製造方法
JP2536714B2 (ja) * 1993-03-03 1996-09-18 日本電気株式会社 光変調器集積型多重量子井戸構造半導体レ―ザ素子
CA2121405C (en) * 1993-04-30 1999-03-16 David Andrew Barclay Miller Tunable lasers based on absorbers in standing waves
FR2706079B1 (fr) * 1993-06-02 1995-07-21 France Telecom Composant intégré monolithique laser-modulateur à structure multi-puits quantiques.
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
US5418800A (en) * 1993-10-27 1995-05-23 Yeda Research And Development Co. Ltd. Reduced linewidth from an electrically coupled two section semiconductor laser
US5548607A (en) * 1994-06-08 1996-08-20 Lucent Technologies, Inc. Article comprising an integrated laser/modulator combination
US5521738A (en) * 1994-06-30 1996-05-28 At&T Corp. Data encoded optical pulse generator
US5754714A (en) * 1994-09-17 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor optical waveguide device, optical control type optical switch, and wavelength conversion device
DE19624514C1 (de) * 1996-06-19 1997-07-17 Siemens Ag Laserdiode-Modulator-Kombination
SE507376C2 (sv) * 1996-09-04 1998-05-18 Ericsson Telefon Ab L M Våglängdsavstämbar laseranordning
DE19652529A1 (de) * 1996-12-17 1998-06-18 Siemens Ag Optoelektronisches Bauelement mit MQW-Strukturen
FR2758669B1 (fr) * 1997-01-23 1999-02-19 Alsthom Cge Alcatel Procede de modulation et modulateur optique a semi conducteur
JPH10335751A (ja) * 1997-06-03 1998-12-18 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
US6295308B1 (en) 1999-08-31 2001-09-25 Corning Incorporated Wavelength-locked external cavity lasers with an integrated modulator
WO2002061498A1 (en) * 2001-01-30 2002-08-08 3Dv Systems, Ltd. Optical modulator
US6574260B2 (en) 2001-03-15 2003-06-03 Corning Lasertron Incorporated Electroabsorption modulated laser

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1543405A (en) * 1975-03-29 1979-04-04 Licentia Gmbh Method of and arrangement for producing coherent mode radiation
JPS59165480A (ja) * 1983-03-10 1984-09-18 Nec Corp 半導体発光素子
HUT42101A (en) * 1985-01-07 1987-06-29 Sandoz Ag Process for preparing stomatostatine derivatives and pharmaceutical compositions containing such compounds
JPS61160987A (ja) * 1985-01-09 1986-07-21 Nec Corp 集積型半導体光素子とその製造方法
FR2607628B1 (fr) * 1986-11-27 1989-03-17 Centre Nat Rech Scient Modulateur optique a superreseau
US4905253A (en) * 1989-01-27 1990-02-27 American Telephone And Telegraph Company Distributed Bragg reflector laser for frequency modulated communication systems
FR2655433B1 (fr) * 1989-12-01 1992-06-26 France Etat Procede et dispositif de modulation electro-optique, utilisant la transition oblique a basse energie d'un super-reseau tres couple.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897993B2 (en) 2001-07-24 2005-05-24 Infineon Technologies Ag Electroabsorption modulator, modulator laser device and method for producing an electroabsorption modulator

Also Published As

Publication number Publication date
DE69203998D1 (de) 1995-09-14
EP0531214B1 (de) 1995-08-09
JPH0645585A (ja) 1994-02-18
FR2681191A1 (fr) 1993-03-12
FR2681191B1 (de) 1995-03-03
US5305343A (en) 1994-04-19
JP3238760B2 (ja) 2001-12-17
EP0531214A1 (de) 1993-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: DERZEIT KEIN VERTRETER BESTELLT

8339 Ceased/non-payment of the annual fee