JP3229312B2 - 加工物の互いに表裏をなす表面領域に化学的にコーティングを施す方法及びそのための装置 - Google Patents

加工物の互いに表裏をなす表面領域に化学的にコーティングを施す方法及びそのための装置

Info

Publication number
JP3229312B2
JP3229312B2 JP24414590A JP24414590A JP3229312B2 JP 3229312 B2 JP3229312 B2 JP 3229312B2 JP 24414590 A JP24414590 A JP 24414590A JP 24414590 A JP24414590 A JP 24414590A JP 3229312 B2 JP3229312 B2 JP 3229312B2
Authority
JP
Japan
Prior art keywords
workpiece
plasma
coating
electrodes
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24414590A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03120375A (ja
Inventor
ティーバウト フランシス
ツィマーマン ハインリヒ
Original Assignee
ウンアクシス バルツェルス アクチェンゲゼルシャフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ウンアクシス バルツェルス アクチェンゲゼルシャフト filed Critical ウンアクシス バルツェルス アクチェンゲゼルシャフト
Publication of JPH03120375A publication Critical patent/JPH03120375A/ja
Application granted granted Critical
Publication of JP3229312B2 publication Critical patent/JP3229312B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP24414590A 1989-09-22 1990-09-17 加工物の互いに表裏をなす表面領域に化学的にコーティングを施す方法及びそのための装置 Expired - Fee Related JP3229312B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3931713.7 1989-09-22
DE3931713A DE3931713C1 (enExample) 1989-09-22 1989-09-22

Publications (2)

Publication Number Publication Date
JPH03120375A JPH03120375A (ja) 1991-05-22
JP3229312B2 true JP3229312B2 (ja) 2001-11-19

Family

ID=6390011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24414590A Expired - Fee Related JP3229312B2 (ja) 1989-09-22 1990-09-17 加工物の互いに表裏をなす表面領域に化学的にコーティングを施す方法及びそのための装置

Country Status (4)

Country Link
EP (1) EP0424620B1 (enExample)
JP (1) JP3229312B2 (enExample)
AT (1) ATE127536T1 (enExample)
DE (2) DE3931713C1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025013A (en) * 1994-03-29 2000-02-15 Schott Glaswerke PICVD process and device for the coating of curved substrates
DE19608158C1 (de) * 1996-03-04 1997-08-28 Dresden Vakuumtech Gmbh Verfahren und Einrichtung zur Hochfrequenz-Plasmapolymerisation
DE19744060C2 (de) 1997-10-06 1999-08-12 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur Oberflächenbehandlung von Substraten
DE10010766B4 (de) 2000-03-04 2006-11-30 Schott Ag Verfahren und Vorrichtung zur Beschichtung von insbesondere gekrümmten Substraten
SE527351C2 (sv) * 2003-07-10 2006-02-14 Seco Tools Ab Metod att belägga skär
DE102004018435A1 (de) * 2004-04-06 2005-10-27 Carl Zeiss Vorrichtung zum beidseitigen Beschichten von Substraten mit einer hydrophoben Schicht
CN102796993B (zh) * 2011-05-27 2014-05-28 北京北方微电子基地设备工艺研究中心有限责任公司 Cvd设备和该cvd设备的控制方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847652A (en) * 1972-12-08 1974-11-12 Nasa Method of preparing water purification membranes
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
US4361595A (en) * 1981-01-28 1982-11-30 Rca Corporation Method for preparing an abrasive lapping disc
US4418473A (en) * 1982-03-26 1983-12-06 International Business Machines Corp. Method of making edge protected ferrite core
DE3321906A1 (de) * 1982-06-18 1983-12-22 TDK Corporation, Tokyo Magnetisches pulver mit verbesserter dispergierbarkeit
US4512284A (en) * 1983-12-19 1985-04-23 Rca Corporation Glow discharge apparatus for use in coating a disc-shaped substrate
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
FR2587729B1 (fr) * 1985-09-24 1988-12-23 Centre Nat Rech Scient Procede et dispositif de traitement chimique, notamment de traitement thermochimique et de depot chimique dans un plasma homogene de grand volume
CA1264025A (en) * 1987-05-29 1989-12-27 James A.E. Bell Apparatus and process for coloring objects by plasma coating
US4827870A (en) * 1987-10-05 1989-05-09 Honeywell Inc. Apparatus for applying multilayer optical interference coating on complex curved substrates
US4991542A (en) * 1987-10-14 1991-02-12 The Furukawa Electric Co., Ltd. Method of forming a thin film by plasma CVD and apapratus for forming a thin film

Also Published As

Publication number Publication date
ATE127536T1 (de) 1995-09-15
EP0424620A2 (de) 1991-05-02
DE59009618D1 (de) 1995-10-12
EP0424620B1 (de) 1995-09-06
JPH03120375A (ja) 1991-05-22
DE3931713C1 (enExample) 1991-03-14
EP0424620A3 (en) 1991-10-02

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