JP3209936B2 - Circuit board and its manufacturing method - Google Patents

Circuit board and its manufacturing method

Info

Publication number
JP3209936B2
JP3209936B2 JP33781196A JP33781196A JP3209936B2 JP 3209936 B2 JP3209936 B2 JP 3209936B2 JP 33781196 A JP33781196 A JP 33781196A JP 33781196 A JP33781196 A JP 33781196A JP 3209936 B2 JP3209936 B2 JP 3209936B2
Authority
JP
Japan
Prior art keywords
circuit board
copper plating
thickness
oxide film
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33781196A
Other languages
Japanese (ja)
Other versions
JPH10178246A (en
Inventor
誠 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP33781196A priority Critical patent/JP3209936B2/en
Publication of JPH10178246A publication Critical patent/JPH10178246A/en
Application granted granted Critical
Publication of JP3209936B2 publication Critical patent/JP3209936B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高発熱電子部品或
いは高発熱電子部品と制御回路電子部品とを搭載してな
る混成集積回路に適し、高い放熱性を有し、かつ電気信
頼性に優れた混成集積回路用の回路基板とその製法に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is suitable for a high heat-generating electronic component or a hybrid integrated circuit in which a high heat-generating electronic component and a control circuit electronic component are mounted, has high heat dissipation, and is excellent in electric reliability. The present invention relates to a circuit board for a hybrid integrated circuit and a method of manufacturing the same.

【0002】[0002]

【従来の技術】高発熱性の電子部品を実装する混成集積
回路用の回路基板として、熱伝導性の良好な金属板を用
いた金属ベース回路基板が公知である。金属ベース回路
基板は、アルミニウム等の金属板上にエポキシ樹脂等に
無機フィラーを充填した絶縁剤を数十μm程度に設け、
前記絶縁層上に導電箔からなる回路を設けた構造を有す
る。この金属ベース回路基板は、高い熱伝導性を有する
ので、発熱量が大きい電子部品が搭載される、例えば電
源部品等のハイパワー分野用途の回路基板として好んで
用いられる。上記金属ベース回路基板については、より
大電流を回路に流せるように、例えば300μmもの厚
みのある銅箔を用いて形成した導体回路を有するものが
開発されてきている。
2. Description of the Related Art As a circuit board for a hybrid integrated circuit on which electronic components having high heat generation are mounted, a metal base circuit board using a metal plate having good heat conductivity is known. The metal base circuit board is provided on a metal plate such as aluminum with an insulating agent filled with an inorganic filler in epoxy resin or the like to about tens of μm,
It has a structure in which a circuit made of a conductive foil is provided on the insulating layer. Since this metal-based circuit board has high thermal conductivity, it is preferably used as a circuit board for high-power applications, such as power supply components, on which electronic components generating a large amount of heat are mounted. As the metal-based circuit board, a circuit board having a conductor circuit formed using a copper foil having a thickness of, for example, 300 μm has been developed so that a larger current can flow through the circuit.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、この厚
い銅箔を用いて導体回路とした大電流用の金属ベース回
路基板は、導電箔と絶縁層との接着信頼性が低くく、例
えば品質管理試験時の特に熱処理を行った後或いは加湿
処理後において接着信頼性が劣り、実使用条件下で長期
に渡って信頼して用いることができないという問題点が
あった。
However, a metal base circuit board for a large current, which is a conductor circuit using this thick copper foil, has low adhesion reliability between the conductive foil and the insulating layer. In particular, the adhesion reliability is poor after heat treatment or after humidification, and there has been a problem that it cannot be used reliably over a long period under actual use conditions.

【0004】[0004]

【課題を解決するための手段】本発明は、金属板の少な
くとも一主面上に絶縁層を介して導体回路を設けてなる
回路基板であって、少なくとも金属板側の導体回路の面
が銅メッキ層、銅の酸化膜を順次介して絶縁層に接して
なることを特徴とする回路基板であり、好ましくは、前
記銅メッキ層が少なくともニッケルまたはコバルトのい
ずれかを含む前記回路基板であり、ニッケル及びコバル
トの含有量が0.1〜15重量%であり、銅メッキ層の
厚みが0.5〜20μmであり、前記銅メッキ層の粗さ
がRzで0.1μm以上10μm以下であることを特徴と
する前記回路基板である。また、導体回路の厚みが20
0〜1000μmである前記回路基板である。更に、前
記酸化膜の厚さが10nm以上200nm以下であるこ
とを特徴とする前記の回路基板である。
According to the present invention, there is provided a circuit board having a conductor circuit provided on at least one principal surface of a metal plate via an insulating layer, wherein at least the surface of the conductor circuit on the metal plate side is made of copper. A plating layer, a circuit board characterized by being in contact with the insulating layer via a copper oxide film sequentially, preferably, the copper plating layer is at least one of nickel and cobalt is the circuit board, The content of nickel and cobalt is 0.1 to 15% by weight, the thickness of the copper plating layer is 0.5 to 20 μm, and the roughness of the copper plating layer is 0.1 μm or more and 10 μm or less in Rz. The circuit board described above. Also, if the thickness of the conductor circuit is 20
The circuit board having a thickness of 0 to 1000 μm. Further, in the above circuit board, the thickness of the oxide film is not less than 10 nm and not more than 200 nm.

【0005】また、本発明は、金属板の少なくとも一主
面上に絶縁接着剤層を介して金属箔を接合し該金属箔よ
り導体回路を形成する回路基板の製法であって、少なく
とも片面に銅メッキ層を形成し、該銅メッキ層表面に形
成される銅の酸化膜層を酸処理することで、銅の酸化膜
の厚さを調整した金属箔を前記銅メッキ層、酸化膜を順
次介して絶縁層に接してなるように用いることを特徴と
する回路基板の製法であり、好ましくは、銅メッキ層が
無電解銅メッキ法で作製され、加熱処理により酸化膜が
形成され、酸化膜の厚さが酸処理により調整される回路
基板の製法である。また、好ましくは、加熱処理の温度
が80〜200℃であり、硫酸、特に2〜15重量%の
濃度の硫酸を用いて酸処理し、調整後の酸化膜の厚さが
10nm以上200nm以下であることを特徴とする前
記回路基板の製法である。
The present invention also relates to a method of manufacturing a circuit board for bonding a metal foil on at least one main surface of a metal plate via an insulating adhesive layer to form a conductor circuit from the metal foil, wherein at least one surface of the circuit board is formed. By forming a copper plating layer and subjecting a copper oxide film layer formed on the surface of the copper plating layer to an acid treatment, the metal foil with the adjusted thickness of the copper oxide film is processed in the order of the copper plating layer and the oxide film.
A method for manufacturing a circuit board, characterized in that the circuit board is used so as to be in contact with an insulating layer , preferably, a copper plating layer is formed by an electroless copper plating method, and an oxide film is formed by a heat treatment. This is a method for manufacturing a circuit board in which the thickness of a film is adjusted by an acid treatment. Further, preferably, the temperature of the heat treatment is 80 to 200 ° C., and the acid treatment is performed using sulfuric acid, particularly sulfuric acid having a concentration of 2 to 15% by weight, and the thickness of the adjusted oxide film is 10 nm or more and 200 nm or less. There is provided a method of manufacturing the circuit board.

【0006】[0006]

【発明の実施の形態】以下、本発明について図を用いて
さらに詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings.

【0007】図1に本発明の回路基板の一例を示す。金
属板1上に絶縁層2を介して導体回路3が載置され、前
記導体回路3の前記絶縁層2に接する側には銅メッキ層
4、並びに酸化物層5が形成されている。導体回路3の
上面には半田7を介して半導体素子等の電子部品6が搭
載され、前記電子部品6は金、アルミニウム等のワイヤ
ー8により導体回路3に電気的に接続されている。本発
明は、図1に例示する回路基板にのみに限定されるもの
でなく、導体回路3の上に更に別の絶縁層を介して他の
導体回路を積層したものであっても良いし、金属板の裏
面側に図1の上面側と同様な構成としたものであっても
良い。
FIG. 1 shows an example of a circuit board according to the present invention. A conductive circuit 3 is mounted on a metal plate 1 via an insulating layer 2, and a copper plating layer 4 and an oxide layer 5 are formed on a side of the conductive circuit 3 that contacts the insulating layer 2. An electronic component 6 such as a semiconductor element is mounted on the upper surface of the conductor circuit 3 via a solder 7, and the electronic component 6 is electrically connected to the conductor circuit 3 by a wire 8 such as gold or aluminum. The present invention is not limited to the circuit board illustrated in FIG. 1, and may be a circuit in which another conductor circuit is laminated on the conductor circuit 3 via another insulating layer, A structure similar to that of the upper surface of FIG. 1 may be provided on the rear surface of the metal plate.

【0008】本発明者は、上述の問題点を解決するべ
く、いろいろに検討した結果、導体回路3の絶縁層2に
接する側の表面が銅メッキ層4を有し、しかも該銅メッ
キ層4の表面に酸化膜5が存在するときに、極めて接着
信頼性に優れる回路基板を得ることができるという知見
を実験的に得て、本発明に至ったものである。この理由
は定かではないが、銅メッキ層4が適度な凹凸の表面を
有し、いわゆるアンカー効果を発揮して導体回路3と絶
縁層2との接着力を高めるとともに、表面に酸化膜5が
形成されていることにより絶縁層2との親和性が一層高
くなるので、高い接着信頼性が達成されるものと推察さ
れる。
The inventor of the present invention has conducted various studies in order to solve the above-mentioned problems. As a result, the surface of the conductor circuit 3 on the side in contact with the insulating layer 2 has a copper plating layer 4 and the copper plating layer 4 It has been experimentally found that a circuit board having extremely excellent adhesion reliability can be obtained when the oxide film 5 exists on the surface of the present invention, and the present invention has been achieved. The reason for this is not clear, but the copper plating layer 4 has a moderately uneven surface, exhibits a so-called anchor effect, increases the adhesive force between the conductor circuit 3 and the insulating layer 2, and has an oxide film 5 on the surface. It is presumed that the formation of the insulating layer further enhances the affinity with the insulating layer 2 and thus achieves high bonding reliability.

【0009】銅メッキ層を得る方法として電解銅メッ
キ、無電解銅メッキが公知であり、本発明においてはい
ずれの方法によっても構わないが、いろいろな形状の表
面、いろいろな表面粗さを有する銅メッキ層を容易に得
ることができるという理由から無電解銅メッキ法が好ま
しい。ことに、ニッケルまたはコバルトのいずれかを含
有する無電解銅メッキ層は、その表面の形状があたかも
針状を呈し、絶縁層との接着において優れているので、
また、電解液中にニッケルやコバルトの塩を所定量添加
することで、ニッケルまたはコバルトのいずれかを含有
する無電解銅メッキ層を容易に得ることができるので、
好ましい。
As a method for obtaining a copper plating layer, electrolytic copper plating and electroless copper plating are known. In the present invention, any method may be used, but copper having various shapes and various surface roughness may be used. An electroless copper plating method is preferable because a plating layer can be easily obtained. In particular, the electroless copper plating layer containing either nickel or cobalt has a needle-like surface shape and is excellent in bonding with the insulating layer.
Also, by adding a predetermined amount of a salt of nickel or cobalt to the electrolytic solution, an electroless copper plating layer containing either nickel or cobalt can be easily obtained,
preferable.

【0010】更に、ニッケル及びコバルトの含有量が
0.1重量%〜15重量%とした無電解銅メッキ層は、
その表面粗さがRzで0.1μm以上10μm以下の範
囲のものであり、極めて絶縁層2との接着特性に富み良
好である。即ち、導体回路3の絶縁層2に接する面の表
面粗さが0.1μm未満の場合には、接着力が不足し電
子部品を実装する時に導体回路3が剥離してしまう等の
問題を発生することがあるし、10μmを越える場合に
は、表面の凸部において電界集中が生じ回路基板の電気
的信頼性が低下することがある。
Further, the electroless copper plating layer in which the content of nickel and cobalt is 0.1% by weight to 15% by weight,
The surface roughness is in the range of 0.1 μm or more and 10 μm or less in Rz, and is very rich in adhesion to the insulating layer 2 and excellent. That is, if the surface roughness of the surface of the conductor circuit 3 that contacts the insulating layer 2 is less than 0.1 μm, the adhesive force is insufficient and the conductor circuit 3 peels off when mounting electronic components. When the thickness exceeds 10 μm, electric field concentration occurs at the convex portion on the surface, and the electrical reliability of the circuit board may be reduced.

【0011】尚、導体回路3上に形成される銅メッキ層
4の厚みは0.5μm以上20μm以下が好ましく、更
に好ましくは1〜15μmである。0.5μm未満であ
ると接着力が得られないことがあるし、厚が20μmを
超えると銅メッキ層4が凝集破壊を生じやすくなり、そ
の結果接着力が低下してしまうことがある。
The thickness of the copper plating layer 4 formed on the conductor circuit 3 is preferably 0.5 μm or more and 20 μm or less, and more preferably 1 μm to 15 μm. When the thickness is less than 0.5 μm, the adhesive strength may not be obtained, and when the thickness exceeds 20 μm, the copper plating layer 4 tends to cause cohesive failure, and as a result, the adhesive strength may be reduced.

【0012】しかし、上述のとおりに、銅メッキ層4を
設けたとしても回路基板の熱処理後或いは加湿処理後の
接着信頼性が低下してしまうことがある。発明者は、こ
の点について更に検討を行い、銅メッキ層4と絶縁層2
とが酸化膜5を介して接触させるときに改善されること
を見いだし本発明に至ったものである。即ち、酸化膜5
を、例えば、空気中で80〜200℃で所定時間保持す
る条件で加熱処理することで、銅メッキ層4上に形成す
ることにより、熱処理後や加湿処理後であっても、導体
回路3と絶縁層2との接着力が低下しないことを見いだ
したものである。
However, as described above, even if the copper plating layer 4 is provided, the adhesion reliability after heat treatment or humidification of the circuit board may be reduced. The inventor further studied this point and found that the copper plating layer 4 and the insulating layer 2
Are improved when they are brought into contact with each other through the oxide film 5, and the present invention has been achieved. That is, the oxide film 5
Is formed on the copper plating layer 4 by, for example, performing a heat treatment under a condition of maintaining the same at 80 to 200 ° C. for a predetermined time in the air. It has been found that the adhesive strength with the insulating layer 2 does not decrease.

【0013】酸化膜5は、前述のとおりに、例えば空気
中で80〜200℃の温度に銅メッキ層4を曝すことで
得ることができ、前記温度とその保持時間を調整するこ
とで酸化膜5を所望の厚さで形成することもできる。前
記の空気中での加熱処理温度に関しては、前記温度範囲
以外を選択することもできるが、本発明者の検討によれ
ば、80℃未満の場合には、充分な厚さの酸化膜を得る
のに長時間を要するばかりでなく、酸化膜に斑を生じ易
いことで、また、200℃を越える場合には、酸化膜の
成長が速すぎて厚みの制御しにくくなることから、前記
80〜200℃が好ましい範囲として選択される。ま
た、酸化膜5の厚みはダイヤモンドカッター等により断
面を作製して該断面をEDAX分析して、酸素成分の確
認される部分の厚さを調べることで行われる。
As described above, the oxide film 5 can be obtained, for example, by exposing the copper plating layer 4 to a temperature of 80 to 200 ° C. in the air, and by adjusting the temperature and the holding time thereof. 5 can be formed with a desired thickness. Regarding the heat treatment temperature in the air, it is possible to select a temperature other than the above-mentioned temperature range. Not only takes a long time, but also tends to cause unevenness in the oxide film. If the temperature exceeds 200 ° C., the oxide film grows too quickly to control the thickness. 200 ° C. is selected as a preferred range. The thickness of the oxide film 5 is determined by preparing a cross section with a diamond cutter or the like and performing EDAX analysis on the cross section to check the thickness of a portion where an oxygen component is confirmed.

【0014】本発明において、酸化膜5の厚さは10n
m以上200nm以下が好ましい。酸化膜5が10nm
未満では接着力が不足して、耐湿試験等で導体回路が剥
離する等の問題を生じることがあるし、200nmを越
えると酸化膜5の凝集破壊が生じて接着信頼性が低下す
ることがある。
In the present invention, the thickness of the oxide film 5 is 10 n
It is preferably from m to 200 nm. Oxide film 5 is 10 nm
If it is less than 7, the adhesive strength may be insufficient, causing problems such as peeling of the conductor circuit in a moisture resistance test or the like. If it exceeds 200 nm, cohesive failure of the oxide film 5 may occur, and the bonding reliability may decrease. .

【0015】前記酸化膜5の厚みは、導体回路3用の金
属箔表面に無電解銅メッキを施した後、絶縁層と張り合
わせる以前に、酸で処理することで制御することができ
る。酸処理を行うときの酸の種類は特に限定すべき理由
はなく、硫酸、燐酸、塩酸およびその混合物或いは、硫
酸−過酸化水素水溶液等を用いることができる。このう
ち、硫酸は迅速にしかも比較的均一に酸化膜5を除去で
きるという理由で好ましく、とりわけ、2重量%以上1
5重量%以下の濃度の硫酸が好ましい。即ち、硫酸濃度
が2重量%未満の場合、酸化膜を低減し所定厚みにする
のに時間を要し作業性が低下するので工業的生産には適
さなくなるし、硫酸濃度が15重量%を越える場合に
は、硫酸と銅メッキ層との接触時間の相違に起因して得
られる酸化膜の厚さにむらを生じることがあるからであ
る。
The thickness of the oxide film 5 can be controlled by treating the surface of the metal foil for the conductive circuit 3 with an acid before electroless copper plating and before bonding the insulating film to the insulating layer. The type of acid used in the acid treatment is not particularly limited, and sulfuric acid, phosphoric acid, hydrochloric acid, a mixture thereof, a sulfuric acid-hydrogen peroxide aqueous solution, or the like can be used. Of these, sulfuric acid is preferred because it can remove the oxide film 5 quickly and relatively uniformly, and particularly, 2% by weight or more and 1% or more.
Sulfuric acid at a concentration of 5% by weight or less is preferred. That is, when the sulfuric acid concentration is less than 2% by weight, it takes time to reduce the oxide film to a predetermined thickness and the workability deteriorates, so that it is not suitable for industrial production, and the sulfuric acid concentration exceeds 15% by weight. In such a case, the thickness of the oxide film obtained may be uneven due to the difference in the contact time between the sulfuric acid and the copper plating layer.

【0016】導体回路3の材質については、特に規定す
るものではないが、銅、アルミニウム、鉄、モリブデ
ン、ニッケル、コバルト、シリコンの少なくとも1種類
以上からなるものが選択され、これら金属のクラッド材
であっても構わない。
Although the material of the conductor circuit 3 is not particularly limited, a material made of at least one of copper, aluminum, iron, molybdenum, nickel, cobalt, and silicon is selected. It does not matter.

【0017】また、導体回路3の厚みは200μm以上
1000μm以下が好ましい。導体回路3の厚みが20
0μmより小さくても何等問題はないが、大電流用途向
け回路基板とする上ではメリットがでない場合がある。
一方、導体回路3の厚みが1000μmを超えると、回
路をエッチング法で作製する場合に、エッチングファク
ターの影響より、実装密度が低下し、回路基板として実
使用上使用できなくなることがある。
The thickness of the conductor circuit 3 is preferably 200 μm or more and 1000 μm or less. The thickness of the conductor circuit 3 is 20
Although there is no problem if it is smaller than 0 μm, there is a case where there is no merit in making a circuit board for a large current application.
On the other hand, when the thickness of the conductor circuit 3 exceeds 1000 μm, when a circuit is manufactured by an etching method, the mounting density is reduced due to the influence of an etching factor, and the circuit may not be practically used as a circuit board.

【0018】本発明において、金属板1には、アルミニ
ウムおよびその合金、銅、鉄、ステンレスおよびこれら
の金属或いは合金のクラッド材等が用いられるが、これ
らに限定されるものではない。また、金属板1の厚みに
ついても特に制限はないが、一般に0.5mm以上5.
0mm以下のものが用いられる。
In the present invention, aluminum and its alloys, copper, iron, stainless steel, clad materials of these metals or alloys, etc. are used for the metal plate 1, but the metal plate 1 is not limited to these. The thickness of the metal plate 1 is not particularly limited, but is generally 0.5 mm or more.
Those having a size of 0 mm or less are used.

【0019】絶縁層2には無機フィラーを充填した樹脂
が主に用いられる。前記樹脂としては、接着性、電気絶
縁性が優れることからエポキシ樹脂、フェノール樹脂、
ブチラール樹脂等が用いられ、無機フィラーとしては酸
化アルミニウム、酸化珪素、酸化マグネシウム、窒化ア
ルミニウム、窒化珪素、窒化硼素等が用いられる。ま
た、前記無機フィラーには、ガラス繊維、ガラスクロ
ス、無機ファイバー等を混ぜてもかまわない。
For the insulating layer 2, a resin filled with an inorganic filler is mainly used. As the resin, epoxy resin, phenol resin, and
Butyral resin and the like are used, and as the inorganic filler, aluminum oxide, silicon oxide, magnesium oxide, aluminum nitride, silicon nitride, boron nitride and the like are used. In addition, glass fibers, glass cloth, inorganic fibers, and the like may be mixed with the inorganic filler.

【0020】絶縁層2の厚みは50μm以上200μm
以下が好ましい。絶縁層2の厚みが50μm未満である
と回路基板の絶縁信頼性が低下する場合があるし、20
0μmを超えると絶縁信頼性は確保されるが、熱伝導性
が低下し高発熱量の電子機器や半導体素子を搭載できな
くなることがある。
The thickness of the insulating layer 2 is 50 μm or more and 200 μm.
The following is preferred. If the thickness of the insulating layer 2 is less than 50 μm, the insulation reliability of the circuit board may be reduced.
If it exceeds 0 μm, insulation reliability is ensured, but thermal conductivity is reduced, and it may be impossible to mount an electronic device or a semiconductor element having a high calorific value.

【0021】本発明の回路基板を得る方法としては、予
め、導体回路3となる金属箔の少なくとも片面に銅メッ
キ層4を形成した後、例えば空気中での加熱等の方法で
前記銅メッキ層の一部を酸化し酸化膜5を形成させ、該
金属箔を金属板1上に絶縁層2を介して接合し、更に前
記金属箔をエッチング等の方法で加工し回路形成させる
ことで得ることができる。更に、前記酸化膜5の厚さが
厚すぎた場合には、金属板1に接合する以前に硫酸等の
酸で処理することで所定の厚さに調整することができ
る。
As a method of obtaining the circuit board of the present invention, a copper plating layer 4 is formed on at least one side of a metal foil to be a conductor circuit 3 and then the copper plating layer 4 is heated by, for example, air. Is formed by oxidizing a part of the metal foil to form an oxide film 5, bonding the metal foil on the metal plate 1 via the insulating layer 2, and further processing the metal foil by a method such as etching to form a circuit. Can be. Further, when the thickness of the oxide film 5 is too large, it can be adjusted to a predetermined thickness by treating with an acid such as sulfuric acid before joining to the metal plate 1.

【0022】以下、実施例に基づいて本発明を更に詳細
に説明する。
Hereinafter, the present invention will be described in more detail with reference to examples.

【実施例】【Example】

〔実施例1〕厚さ0.3mmの銅箔の片面に、無電解銅
メッキを以下の条件でメッキして、厚み9.1μm、表
面粗さがRzで5μmの銅メッキ層を形成した。次に、
空気中で120℃30分保持の条件下で処理し、銅メッ
キ層の表面に酸化膜を50nmの厚みで形成した。次
に、厚さ3.0mmのアルミニウム板上に、絶縁剤を硬
化後の厚さが80μmになるように塗布し絶縁層を形成
した後、前記の表面に銅メッキ層と酸化膜を有する銅箔
を該絶縁層上に張り合わせた、熱プレス法にて絶縁剤を
硬化させて金属ベース基板を作製し、更に、前記銅箔部
分をエッチングすることで回路を形成して金属ベース回
路基板とした。前記金属ベース回路基板について、以下
に示す条件で耐熱試験および耐湿試験を行い、その前後
での導体回路と絶縁層との接着強さを以下の方法で調べ
た。これらの結果を表1に示した。
Example 1 One side of a copper foil having a thickness of 0.3 mm was plated with electroless copper plating under the following conditions to form a copper plating layer having a thickness of 9.1 μm and a surface roughness Rz of 5 μm. next,
The treatment was performed in the air at 120 ° C. for 30 minutes to form an oxide film with a thickness of 50 nm on the surface of the copper plating layer. Next, an insulating agent is applied on a 3.0 mm-thick aluminum plate so as to have a cured thickness of 80 μm to form an insulating layer, and then the copper having a copper plating layer and an oxide film A foil was laminated on the insulating layer, an insulating agent was cured by a hot press method to prepare a metal base substrate, and further, a circuit was formed by etching the copper foil portion to obtain a metal base circuit board. . The metal base circuit board was subjected to a heat resistance test and a moisture resistance test under the following conditions, and the adhesive strength between the conductor circuit and the insulating layer before and after the test was examined by the following method. The results are shown in Table 1.

【0023】[0023]

【表1】 [Table 1]

【0024】<耐熱試験方法>金属ベース回路基板上
に、箔接着強さ測定用のパターンを形成した後、260
℃の温度一定のはんだバス上に浮かべ60分放置した
後、前記金属ベース回路基板を取り出し、箔接着強さを
調べる。
<Heat resistance test method> After forming a pattern for measuring the foil adhesion strength on the metal base circuit board,
After being floated on a solder bath at a constant temperature of 60 ° C. for 60 minutes, the metal base circuit board is taken out, and the foil bonding strength is examined.

【0025】<耐湿試験方法>金属ベース回路基板上
に、箔接着強さ測定用パターンを形成した後、121℃
×2.0atmの圧力容器内に100時間放置した後、
前記金属ベース回路基板を取り出し、箔接着強さを調べ
る。
<Moisture resistance test method> After forming a pattern for measuring the foil adhesion strength on a metal base circuit board,
After leaving in a pressure vessel of × 2.0atm for 100 hours,
The metal base circuit board is taken out and the adhesive strength of the foil is examined.

【0026】<導体回路と絶縁層との接着強さの測定方
法>JIS C6841 プリント配線板用銅張り積層
板試験方法の5.7項に記載されている引きはがし強さ
の試験方法に準じる。
<Measurement Method of Adhesion Strength between Conductive Circuit and Insulating Layer> The peel strength test method described in 5.7 of JIS C6841 Test Method for Copper-Clad Laminates for Printed Wiring Boards is used.

【0027】<回路基板の絶縁破壊電圧の測定方法>J
IS C2110 固体電気絶縁材料の絶縁耐力の試験
方法の8.2項に記載されている段階破壊試験方法に準
じる。
<Method for Measuring Breakdown Voltage of Circuit Board>
IS C2110 The step breakdown test method described in Section 8.2 of the test method of the dielectric strength of the solid electrical insulating material is used.

【0028】〔実施例2〜12、比較例1、2〕金属ベ
ース回路基板作製時に、無電解銅メッキ条件をいろいろ
変えて銅メッキ厚、銅メッキ組成、表面粗さを変えたこ
と、更に濃度10重量%の硫酸にて処理時間を変えて酸
化膜厚みを変えたこと以外は、実施例1と同一の操作を
経て得られたいろいろな金属ベース回路基板について、
実施例1と同一の評価を行い実施例2〜12とした。ま
た、無電解銅メッキを施さずに空気中で加熱処理し表面
に酸化膜を設けた銅箔を用いた金属ベース回路基板、無
電解銅メッキはしてあるもののその表面に酸化膜を形成
していない銅箔を用いた金属ベース回路基板を作製し、
比較の例とした。これらの結果も表1に示した。尚、実
施例1をも含めて、いずれの金属ベース回路基板も絶縁
耐力は10kV以上であり、良好であった。
[Examples 2 to 12, Comparative Examples 1 and 2] During the preparation of a metal base circuit board, various conditions of electroless copper plating were used to change the copper plating thickness, the copper plating composition, the surface roughness, and the concentration. Except for changing the oxide film thickness by changing the treatment time with 10% by weight sulfuric acid, various metal-based circuit boards obtained through the same operation as in Example 1
The same evaluation as in Example 1 was performed, and Examples 2 to 12 were performed. In addition, a metal-based circuit board using a copper foil with an oxide film on the surface by heat treatment in air without applying electroless copper plating. To make a metal-based circuit board using copper foil,
This is a comparative example. These results are also shown in Table 1. In addition, all the metal-based circuit boards including Example 1 had good dielectric strength of 10 kV or more, which was good.

【0029】[0029]

【発明の効果】本発明の回路基板は、導体回路と絶縁層
との密着性に優れ、接着力が高く、接着信頼性に優れ、
品質管理試験における熱処理や加湿処理後においても接
着信頼性が高く、実使用条件下で長期に渡って信頼して
用いることができる。また、本発明の製法によれば、前
記回路基板を安定して確実に得ることができるという効
果を奏する。
The circuit board of the present invention has excellent adhesion between the conductor circuit and the insulating layer, high adhesive strength, and excellent adhesive reliability.
Adhesion reliability is high even after heat treatment or humidification treatment in a quality control test, and it can be used reliably over a long period under actual use conditions. Further, according to the manufacturing method of the present invention, there is an effect that the circuit board can be stably and reliably obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の回路基板の一例を示す断面図。FIG. 1 is a cross-sectional view illustrating an example of a circuit board of the present invention.

【符号の説明】[Explanation of symbols]

1 金属板 2 絶縁層 3 導体回路(金属箔) 4 銅メッキ層 5 酸化膜 6 電子部品 7 半田 8 ワイヤー DESCRIPTION OF SYMBOLS 1 Metal plate 2 Insulating layer 3 Conductor circuit (metal foil) 4 Copper plating layer 5 Oxide film 6 Electronic component 7 Solder 8 Wire

Claims (15)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】金属板の少なくとも一主面上に絶縁層を介
して導体回路を設けてなる回路基板であって、前記導体
回路の少なくとも金属板側の面が銅メッキ層、酸化膜を
順次介して絶縁層に接してなることを特徴とする回路基
板。
1. A circuit board having a conductor circuit provided on at least one main surface of a metal plate via an insulating layer, wherein at least the surface of the conductor circuit on the metal plate side comprises a copper plating layer and an oxide film sequentially. A circuit board characterized by being in contact with an insulating layer via an insulating layer.
【請求項2】銅メッキ層が、少なくともニッケルまたは
コバルトのいずれかを含むことを特徴とする請求項1記
載の回路基板。
2. The circuit board according to claim 1, wherein the copper plating layer contains at least one of nickel and cobalt.
【請求項3】銅メッキ層中のニッケル及びコバルトの含
有量が0.1重量%以上15重量%以下であることを特
徴とする請求項2記載の回路基板。
3. The circuit board according to claim 2, wherein the content of nickel and cobalt in the copper plating layer is 0.1% by weight or more and 15% by weight or less.
【請求項4】銅メッキ層の厚みが0.5μm以上20μ
m以下であることを特徴とする請求項1記載の回路基
板。
4. The copper plating layer has a thickness of 0.5 μm or more and 20 μm or more.
2. The circuit board according to claim 1, wherein m is equal to or less than m.
【請求項5】銅メッキ層の粗さがRzで0.1μm以上
10μm以下であることを特徴とする請求項1記載の回
路基板。
5. The circuit board according to claim 1, wherein the roughness of the copper plating layer is 0.1 μm or more and 10 μm or less in Rz.
【請求項6】導体回路の厚みが200μm以上1000
μm以下であることを特徴とする請求項1記載の回路基
板。
6. The conductor circuit has a thickness of 200 μm or more and 1000 μm or more.
The circuit board according to claim 1, wherein the thickness is not more than μm.
【請求項7】酸化膜の厚さが10nm以上200nm以
下であることを特徴とする請求項1、請求項2、請求項
3、請求項4、請求項5又は請求項6記載の回路基板。
7. The circuit board according to claim 1, wherein the thickness of the oxide film is not less than 10 nm and not more than 200 nm.
【請求項8】金属板の少なくとも一主面上に絶縁層を介
して金属箔を接合し該金属箔より導体回路を形成する回
路基板の製法であって、前記金属箔の少なくとも片面に
銅メッキ層を形成し、更に該銅メッキ層表面に酸化膜を
形成することで、該酸化膜の厚さを調整した金属箔を
記銅メッキ層、酸化膜を順次介して絶縁層に接してなる
ように用いることを特徴とする回路基板の製法。
8. A method for manufacturing a circuit board, comprising joining a metal foil on at least one principal surface of a metal plate via an insulating layer to form a conductive circuit from the metal foil, wherein at least one surface of the metal foil is plated with copper. to form a layer, further by forming an oxide film on the copper plating layer surface, before the metal foil was adjusted thickness of the oxide film
In contact with the insulating layer via the copper plating layer and the oxide film in order
A method for producing a circuit board, characterized in that it is used as described above .
【請求項9】銅メッキ層を無電解銅メッキ法で作製する
ことを特徴とする請求項8記載の回路基板の製法。
9. The method according to claim 8, wherein the copper plating layer is formed by an electroless copper plating method.
【請求項10】加熱処理により酸化膜を形成することを
特徴とする請求項8記載の回路基板の製法。
10. The method according to claim 8, wherein the oxide film is formed by a heat treatment.
【請求項11】加熱処理温度が80℃以上200℃以下
であることを特徴とする請求項10記載の回路基板の製
法。
11. The method for manufacturing a circuit board according to claim 10, wherein the heat treatment temperature is 80 ° C. or more and 200 ° C. or less.
【請求項12】酸化膜の厚みを酸処理することにより調
整することを特徴とする請求項8記載の回路基板の製
法。
12. The method according to claim 8, wherein the thickness of the oxide film is adjusted by performing an acid treatment.
【請求項13】硫酸を用いて酸処理することを特徴とす
る請求項12記載の回路基板の製法。
13. The method for producing a circuit board according to claim 12, wherein the acid treatment is performed using sulfuric acid.
【請求項14】硫酸の濃度が2重量%以上15重量%以
下であることを特徴とする請求項11記載の回路基板の
製法。
14. The method according to claim 11, wherein the concentration of the sulfuric acid is 2% by weight or more and 15% by weight or less.
【請求項15】調整後の酸化膜の厚みが10nm以上2
00nm以下であることを特徴とする請求項8、請求項
9、請求項10、請求項11、請求項12、請求項13
又は請求項14記載の回路基板の製法。
15. The oxide film after adjustment has a thickness of 10 nm or more.
8. The structure according to claim 8, wherein the thickness is equal to or less than 00 nm.
15. A method for manufacturing a circuit board according to claim 14.
JP33781196A 1996-12-18 1996-12-18 Circuit board and its manufacturing method Expired - Fee Related JP3209936B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33781196A JP3209936B2 (en) 1996-12-18 1996-12-18 Circuit board and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33781196A JP3209936B2 (en) 1996-12-18 1996-12-18 Circuit board and its manufacturing method

Publications (2)

Publication Number Publication Date
JPH10178246A JPH10178246A (en) 1998-06-30
JP3209936B2 true JP3209936B2 (en) 2001-09-17

Family

ID=18312198

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP3209936B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002084768A (en) * 2000-09-08 2002-03-22 Toto Ltd Electrostatic actuator
JP3709142B2 (en) * 2001-01-19 2005-10-19 福田金属箔粉工業株式会社 Copper foil for printed wiring board and method for producing the same
JP6569545B2 (en) * 2016-01-27 2019-09-04 住友金属鉱山株式会社 Thick film copper electrode or wiring and method for forming the same
JP6709313B1 (en) * 2019-05-31 2020-06-10 アオイ電子株式会社 Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH10178246A (en) 1998-06-30

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