JP3207016B2 - 半導体レーザ装置の樹脂コーティング方法 - Google Patents

半導体レーザ装置の樹脂コーティング方法

Info

Publication number
JP3207016B2
JP3207016B2 JP16551993A JP16551993A JP3207016B2 JP 3207016 B2 JP3207016 B2 JP 3207016B2 JP 16551993 A JP16551993 A JP 16551993A JP 16551993 A JP16551993 A JP 16551993A JP 3207016 B2 JP3207016 B2 JP 3207016B2
Authority
JP
Japan
Prior art keywords
cap
resin
semiconductor laser
coating method
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16551993A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0722711A (ja
Inventor
英樹 市川
浩 竹川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16551993A priority Critical patent/JP3207016B2/ja
Priority to TW083105971A priority patent/TW259886B/zh
Priority to EP94304837A priority patent/EP0633615B1/en
Priority to DE69414313T priority patent/DE69414313T2/de
Priority to CA002127299A priority patent/CA2127299C/en
Priority to KR1019940016260A priority patent/KR0154993B1/ko
Priority to CN94109155A priority patent/CN1063581C/zh
Publication of JPH0722711A publication Critical patent/JPH0722711A/ja
Priority to CN99124886A priority patent/CN1260616A/zh
Application granted granted Critical
Publication of JP3207016B2 publication Critical patent/JP3207016B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP16551993A 1993-07-05 1993-07-05 半導体レーザ装置の樹脂コーティング方法 Expired - Fee Related JP3207016B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP16551993A JP3207016B2 (ja) 1993-07-05 1993-07-05 半導体レーザ装置の樹脂コーティング方法
TW083105971A TW259886B (member.php) 1993-07-05 1994-06-30
DE69414313T DE69414313T2 (de) 1993-07-05 1994-07-01 Harzbeschichtungsverfahren für Halbleiterlaser- und Photodioden-Chips
EP94304837A EP0633615B1 (en) 1993-07-05 1994-07-01 Resin coating method for semiconductor laser and photodiode chips
CA002127299A CA2127299C (en) 1993-07-05 1994-07-04 Resin coating method for semiconductor laser device capable of coating thinly and uniformly surfaces of a semiconductor laser chip and photodiode chips with a resin
KR1019940016260A KR0154993B1 (ko) 1993-07-05 1994-07-05 반도체레이저장치의 수지코팅방법
CN94109155A CN1063581C (zh) 1993-07-05 1994-07-05 用于半导体激光装置的树脂涂覆方法
CN99124886A CN1260616A (zh) 1993-07-05 1999-11-18 用于半导体激光装置的树脂涂覆方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16551993A JP3207016B2 (ja) 1993-07-05 1993-07-05 半導体レーザ装置の樹脂コーティング方法

Publications (2)

Publication Number Publication Date
JPH0722711A JPH0722711A (ja) 1995-01-24
JP3207016B2 true JP3207016B2 (ja) 2001-09-10

Family

ID=15813938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16551993A Expired - Fee Related JP3207016B2 (ja) 1993-07-05 1993-07-05 半導体レーザ装置の樹脂コーティング方法

Country Status (7)

Country Link
EP (1) EP0633615B1 (member.php)
JP (1) JP3207016B2 (member.php)
KR (1) KR0154993B1 (member.php)
CN (2) CN1063581C (member.php)
CA (1) CA2127299C (member.php)
DE (1) DE69414313T2 (member.php)
TW (1) TW259886B (member.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866887B1 (en) * 2003-10-14 2005-03-15 Photon Dynamics, Inc. Method for manufacturing PDLC-based electro-optic modulator using spin coating
CN101746578B (zh) * 2009-12-23 2011-03-16 中国科学院半导体研究所 半导体激光器储存盒
CN102194714B (zh) * 2010-03-05 2013-02-27 铜陵三佳科技股份有限公司 一种带树脂上料光电检测装置的半导体封装设备
CN103681983B (zh) * 2013-06-17 2016-02-24 深圳市绎立锐光科技开发有限公司 一种发光元件上涂覆荧光粉层的方法及喷气装置
CN119965663B (zh) * 2025-04-10 2025-06-20 华芯半导体科技有限公司 一种高速vcsel半导体芯片防护封装装置及封装方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914891B2 (ja) * 1979-11-15 1984-04-06 松下電器産業株式会社 回転塗布方法および回転塗布装置
JPS57130422A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Resist coating and developing device
JPS58103132A (ja) * 1981-12-16 1983-06-20 Konishiroku Photo Ind Co Ltd スピンナ−装置
JPS5966229A (ja) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd 位相ロツクル−プ回路
JPH04137580A (ja) * 1990-09-27 1992-05-12 Sharp Corp 半導体レーザ用ステム
JPH0596229A (ja) * 1991-10-09 1993-04-20 Fujitsu Ltd スピン式樹脂液塗布方法
TW289872B (member.php) * 1992-12-24 1996-11-01 Sharp Kk

Also Published As

Publication number Publication date
CN1104804A (zh) 1995-07-05
CN1063581C (zh) 2001-03-21
EP0633615B1 (en) 1998-11-04
CN1260616A (zh) 2000-07-19
KR950004666A (ko) 1995-02-18
KR0154993B1 (ko) 1998-12-01
DE69414313T2 (de) 1999-05-27
EP0633615A1 (en) 1995-01-11
CA2127299A1 (en) 1995-01-06
JPH0722711A (ja) 1995-01-24
DE69414313D1 (de) 1998-12-10
CA2127299C (en) 1999-01-12
TW259886B (member.php) 1995-10-11

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