TW259886B - - Google Patents

Info

Publication number
TW259886B
TW259886B TW083105971A TW83105971A TW259886B TW 259886 B TW259886 B TW 259886B TW 083105971 A TW083105971 A TW 083105971A TW 83105971 A TW83105971 A TW 83105971A TW 259886 B TW259886 B TW 259886B
Authority
TW
Taiwan
Application number
TW083105971A
Other languages
Chinese (zh)
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TW259886B publication Critical patent/TW259886B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02218Material of the housings; Filling of the housings
    • H01S5/02234Resin-filled housings; the housings being made of resin
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/17Semiconductor lasers comprising special layers
    • H01S2301/176Specific passivation layers on surfaces other than the emission facet
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW083105971A 1993-07-05 1994-06-30 TW259886B (member.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16551993A JP3207016B2 (ja) 1993-07-05 1993-07-05 半導体レーザ装置の樹脂コーティング方法

Publications (1)

Publication Number Publication Date
TW259886B true TW259886B (member.php) 1995-10-11

Family

ID=15813938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083105971A TW259886B (member.php) 1993-07-05 1994-06-30

Country Status (7)

Country Link
EP (1) EP0633615B1 (member.php)
JP (1) JP3207016B2 (member.php)
KR (1) KR0154993B1 (member.php)
CN (2) CN1063581C (member.php)
CA (1) CA2127299C (member.php)
DE (1) DE69414313T2 (member.php)
TW (1) TW259886B (member.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866887B1 (en) * 2003-10-14 2005-03-15 Photon Dynamics, Inc. Method for manufacturing PDLC-based electro-optic modulator using spin coating
CN101746578B (zh) * 2009-12-23 2011-03-16 中国科学院半导体研究所 半导体激光器储存盒
CN102194714B (zh) * 2010-03-05 2013-02-27 铜陵三佳科技股份有限公司 一种带树脂上料光电检测装置的半导体封装设备
CN103681983B (zh) * 2013-06-17 2016-02-24 深圳市绎立锐光科技开发有限公司 一种发光元件上涂覆荧光粉层的方法及喷气装置
CN119965663B (zh) * 2025-04-10 2025-06-20 华芯半导体科技有限公司 一种高速vcsel半导体芯片防护封装装置及封装方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914891B2 (ja) * 1979-11-15 1984-04-06 松下電器産業株式会社 回転塗布方法および回転塗布装置
JPS57130422A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Resist coating and developing device
JPS58103132A (ja) * 1981-12-16 1983-06-20 Konishiroku Photo Ind Co Ltd スピンナ−装置
JPS5966229A (ja) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd 位相ロツクル−プ回路
JPH04137580A (ja) * 1990-09-27 1992-05-12 Sharp Corp 半導体レーザ用ステム
JPH0596229A (ja) * 1991-10-09 1993-04-20 Fujitsu Ltd スピン式樹脂液塗布方法
TW289872B (member.php) * 1992-12-24 1996-11-01 Sharp Kk

Also Published As

Publication number Publication date
CN1104804A (zh) 1995-07-05
CN1063581C (zh) 2001-03-21
JP3207016B2 (ja) 2001-09-10
EP0633615B1 (en) 1998-11-04
CN1260616A (zh) 2000-07-19
KR950004666A (ko) 1995-02-18
KR0154993B1 (ko) 1998-12-01
DE69414313T2 (de) 1999-05-27
EP0633615A1 (en) 1995-01-11
CA2127299A1 (en) 1995-01-06
JPH0722711A (ja) 1995-01-24
DE69414313D1 (de) 1998-12-10
CA2127299C (en) 1999-01-12

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