JP3202669B2 - Electrical characteristics measurement method - Google Patents
Electrical characteristics measurement methodInfo
- Publication number
- JP3202669B2 JP3202669B2 JP29694597A JP29694597A JP3202669B2 JP 3202669 B2 JP3202669 B2 JP 3202669B2 JP 29694597 A JP29694597 A JP 29694597A JP 29694597 A JP29694597 A JP 29694597A JP 3202669 B2 JP3202669 B2 JP 3202669B2
- Authority
- JP
- Japan
- Prior art keywords
- contact
- probe
- contact resistance
- semiconductor device
- probes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体装置等の電
子装置の電気的特性測定装置及び測定方法に関し、特に
ウェハース状態の半導体装置の電気的特性時の接触用探
針と電極パッドとの接触抵抗の影響による誤判定を防止
する装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for measuring electrical characteristics of an electronic device such as a semiconductor device, and more particularly to a method of measuring the electrical characteristics of a semiconductor device in a wafer state by contacting a contact probe with an electrode pad. The present invention relates to a device for preventing erroneous determination due to the influence of resistance.
【0002】[0002]
【従来の技術】従来、この種の半導体装置の電気的特性
測定時の接触用探針と電極パッドとの接触抵抗の影響に
よる誤判定防止の測定方法としては、例えば昭58−3
9025号に示されるような方法にて接触抵抗の影響に
よる誤判定を防止している。2. Description of the Related Art Conventionally, as a method for preventing erroneous determination due to the influence of contact resistance between a contact probe and an electrode pad when measuring the electrical characteristics of this type of semiconductor device, for example, Japanese Patent Application Laid-Open No.
No. 9025 prevents erroneous determination due to the effect of contact resistance.
【0003】図2の図2−1〜図2−5は、昭58−3
9025号の公知例を示す。FIGS. 2-1 to 2-5 of FIG.
No. 9025 is shown.
【0004】以下に従来例及び公知例昭58−3902
5号の図2−1〜5の符号の説明を行う。The prior art and known examples are described below.
No. 5 will be described with reference to FIGS.
【0005】図2−1〜図2−5において、1は半導体
装置(LSI)、2はプローブカード、11はウェハー
ス(LSI)、12は接触抵抗確認用素子、13は電極
パッド、14は絶縁層、15は抵抗層、16は接触用探
針、17は金属膜である。In FIGS. 2-1 to 2-5, 1 is a semiconductor device (LSI), 2 is a probe card, 11 is a wafer (LSI), 12 is a contact resistance checking element, 13 is an electrode pad, and 14 is an insulation. Reference numeral 15 denotes a resistance layer, 16 denotes a contact probe, and 17 denotes a metal film.
【0006】図2−1はウェハース状態の半導体装置で
あり、ウェハースの面内に数個の接触抵抗確認用素子を
有している事を示す。この接触抵抗確認用素子(図2−
3)はウェハース表面に電極13を設け、この電極と接
触用探針16を接続させる事で電極13に接続されてい
る抵抗層15の抵抗を測定する事ができる。この抵抗層
15の抵抗値を測定し、その測定値より接触探針16の
接触状態の良否を判断する事ができ、良であれば測定を
続け、否であれば測定を停止する測定方法である。FIG. 2-1 shows a semiconductor device in a wafer state, which has several contact resistance checking elements in the plane of the wafer. This contact resistance checking element (FIG. 2-
In 3), by providing an electrode 13 on the wafer surface and connecting the electrode to the contact probe 16, the resistance of the resistance layer 15 connected to the electrode 13 can be measured. The resistance value of the resistance layer 15 is measured, and the quality of the contact state of the contact probe 16 can be determined from the measured value. If it is good, the measurement is continued, and if not, the measurement is stopped. is there.
【0007】また図2−5の様に金属層17をウェハー
ス上に設けてこの抵抗層の測定値より接触探針16の接
触状態の良否を判断する事もできる。As shown in FIG. 2-5, it is also possible to provide a metal layer 17 on a wafer and determine the quality of the contact state of the contact probe 16 from the measured value of the resistance layer.
【0008】[0008]
【発明が解決しようとする課題】第1の問題点は、ウェ
ハース内の幾つかの半導体装置が接触抵抗確認用の専用
素子となってしまう事である。接触抵抗確認専用の半導
体装置を配置するので、ウェハース上に本来製造される
べき半導体装置の数が減少してしまう。また、ウェハー
ス上に2種類のレイアウトが存在する為、製造過程が複
雑になる。The first problem is that some of the semiconductor devices in the wafer become dedicated elements for checking the contact resistance. Since the semiconductor device dedicated to confirming the contact resistance is arranged, the number of semiconductor devices to be manufactured on the wafer is reduced. Further, since there are two types of layouts on the wafer, the manufacturing process becomes complicated.
【0009】その理由は、ウェハース上に本来製造すべ
き半導体装置とは異なる数個の接触抵抗確認専用素子を
作っている為である。接触抵抗確認専用素子をウェハー
ス上に配置する場合、ウェハース面内で接触抵抗を精度
よく測定するためには接触抵抗確認専用素子は数多く配
置しなければならないが、それだけウェハース上に配置
すべき半導体装置は少なくなり、歩留まりは低下し、コ
ストは上がってしまう。特に半導体装置の面積が大きい
程、顕著になる。The reason is that several special elements for confirming the contact resistance different from the semiconductor device to be originally manufactured are formed on the wafer. When the contact resistance confirmation element is arranged on the wafer, a large number of contact resistance confirmation elements must be arranged in order to accurately measure the contact resistance in the wafer surface, but the semiconductor device to be arranged on the wafer accordingly. , Yields decrease and costs increase. In particular, it becomes more remarkable as the area of the semiconductor device is larger.
【0010】またウェハース上に異なった2つのレイア
ウトを形成する為にはフォトレジストをパターニングす
る露光工程においてスループットが悪くなる。これはフ
ォトレジストをパターニングする場合、レチクルを透過
した光(G線など)で露光を行うが、そのレチクルに本
来形成すべき半導体装置パターンとは別に接触抵抗確認
用素子用のパターンがレチクル上に必要となる。レチク
ルの大きさには露光装置上制限が設けられているので接
触抵抗確認用素子用のパターンの分だけ半導体装置用に
使用できるレチクルの領域が狭くなる事になる。狭い露
光領域にてウェハー全体を露光する事になるので従来も
より数多く繰り返えし露光をする必要があり結果、スル
ープットが悪くなる。Further, in order to form two different layouts on a wafer, throughput deteriorates in an exposure step for patterning a photoresist. When patterning a photoresist, exposure is performed using light (such as G-line) transmitted through a reticle, and a pattern for a contact resistance confirmation element is formed on the reticle separately from a semiconductor device pattern that should be originally formed on the reticle. Required. Since the size of the reticle is limited on the exposure apparatus, the area of the reticle that can be used for the semiconductor device is reduced by the amount of the pattern for the contact resistance checking element. Since the entire wafer is exposed in a narrow exposure area, it is necessary to repeat the exposure more times than before, and as a result, the throughput is deteriorated.
【0011】第2の問題点は、ウェハース面内に数個の
接触抵抗確認専用素子を形成しているが、この接触抵抗
測定方法では実際の半導体装置の測定時の接触状態を再
現していない場合があるという事である。A second problem is that several contact resistance confirmation elements are formed in the wafer surface, but this contact resistance measuring method does not reproduce the actual contact state of the semiconductor device at the time of measurement. That is, there are cases.
【0012】その理由は半導体装置の電極パッドと接触
用探針との接触抵抗はウェハース面内にて微妙に変化す
る。また電極パッド表面状態や接触用探針の針先の状態
の変化にも接触抵抗に影響を与える。この為、実際の半
導体装置上にて接触抵抗を測定しなければ測定時誤判定
してしまう可能性がある。The reason is that the contact resistance between the electrode pad of the semiconductor device and the contact probe slightly changes within the wafer surface. Also, changes in the surface state of the electrode pad and the state of the tip of the contact probe affect the contact resistance. For this reason, if the contact resistance is not measured on an actual semiconductor device, there is a possibility that an erroneous determination is made at the time of measurement.
【0013】つまり接触抵抗確認用素子上では接触抵抗
に問題はなくても、実際の半導体装置を測定する場合、
接触抵抗が高くなりその影響で誤判定してしまう可能性
がある。That is, even if there is no problem with the contact resistance on the contact resistance confirming element, when measuring an actual semiconductor device,
There is a possibility that erroneous determination may be made due to the increased contact resistance.
【0014】[発明の目的]本発明の目的は、電子装
置、特にウェハース状態での半導体装置の電気的特性測
定試験において、半導体装置の電極パッドとプローブカ
ードに取り付けられた接触用探針との接触抵抗が大きく
なり電気的特性測定時に接触抵抗の影響で誤判定してし
まう事を防ぐ事を目的としている。[Object of the Invention] An object of the present invention is to provide an electronic device, particularly, a semiconductor device in a wafer state in a test for measuring electrical characteristics of a semiconductor device, in which an electrode pad of the semiconductor device and a contact probe attached to a probe card are used. An object of the present invention is to prevent an erroneous determination due to an influence of a contact resistance when measuring an electrical characteristic due to an increase in a contact resistance.
【0015】[0015]
【課題を解決するための手段】本発明の半導体装置の電
気的特性測定装置は、1つの電極パッドに対して従来と
同程度の接触面積を有する接触用探針を2本ずつ接触さ
せ接触抵抗値を測定し電気的特性測定状態が正常である
か否かを判定でき、接触抵抗の影響による誤判定を防止
できる。According to the present invention, an electrical characteristic measuring apparatus for a semiconductor device according to the present invention is provided by contacting two contact probes having the same contact area as one electrode pad to one electrode pad by contact resistance. By measuring the value, it can be determined whether the electrical characteristic measurement state is normal or not, and erroneous determination due to the influence of contact resistance can be prevented.
【0016】また求めた接触抵抗値より測定規格を接触
抵抗による電流減少分適正化したり、2本ずつ接触させ
る事で突発的な接触抵抗の増大による影響を少なくし電
気的特性測定時の誤判定を防止する事ができる。[0016] Further, the measurement standard is optimized from the obtained contact resistance value by the current decrease due to the contact resistance, and the influence of the sudden increase in the contact resistance is reduced by contacting two wires at a time, thereby making an erroneous determination at the time of measuring the electrical characteristics. Can be prevented.
【0017】[作用]1つの電極パッドに対して従来と
同程度の接触面積を有する接触用探針を2本づつ接触さ
せ、この2本の接触用探針間に電流を流す事で接触抵抗
値がわかる。[Operation] Two contact probes having the same contact area as the conventional one are brought into contact with one electrode pad at a time, and a current is applied between the two contact probes to make contact resistance smaller. You know the value.
【0018】この接触抵抗値が適正な値でなければ測定
を中断し誤判定による歩留まり低下を防ぐ。If the contact resistance value is not an appropriate value, the measurement is interrupted to prevent a decrease in yield due to erroneous determination.
【0019】妥当な測定値であれば半導体装置の電気的
特性測定を続ける。If the measured values are appropriate, the measurement of the electrical characteristics of the semiconductor device is continued.
【0020】また測定した接触抵抗値が電気的特性測定
試験の測定電流に対して影響を与える様に大きければ電
気的特性測定試験の測定規格適正化を行う事が出来る。If the measured contact resistance value is large enough to affect the measured current of the electrical characteristic measurement test, the measurement standard of the electrical characteristic measurement test can be optimized.
【0021】また1つの電極パッドに対して従来と同程
度の接触面積を有する接触用探針を2本づつ接触させ、
2本それぞれで電流測定を行い、2つの測定値を加算す
る事で突発的な接触抵抗の増大の影響を少なくする事が
出来る。これは抵抗を並列接続したのと同じであるの
で、接触抵抗の影響を減少する事が出来る。Further, two contact probes having the same contact area as the conventional one are brought into contact with one electrode pad,
The effect of the sudden increase in the contact resistance can be reduced by performing the current measurement on each of the two lines and adding the two measured values. This is the same as connecting the resistors in parallel, so that the effect of the contact resistance can be reduced.
【0022】また1本の接触用探針に突発的な抵抗がつ
いても、もう1本が正常に接触していればその影響は少
ない為である。Further, even if one contact probe has a sudden resistance, the influence is small if the other probe is in normal contact.
【0023】以下更に、本発明の作用について説明する
と、本発明は、ウェハース状態の半導体装置の電気的特
性測定において、電極パッドと接触用探針との接触抵抗
による測定結果の誤判定を防止することを課題としてい
るが、この課題を解決するため、本発明は、図1に示す
ように、ウェハース状態の半導体装置の電極パッド3〜
10に接触用探針3−1〜10−2を接触させる。この
時一つの電極パッドに二本の接触用探針を接触させる。
この二本の片方を接地電位に固定、もう一方に適切な電
圧を印可する事で接触抵抗が求まる。この接触抵抗値が
適切な値でなければ電気的特性測定を中止し、適切な値
であれば電気的特性測定を継続する。The operation of the present invention will be further described below. The present invention prevents erroneous determination of the measurement result due to the contact resistance between the electrode pad and the contact probe in measuring the electrical characteristics of the semiconductor device in the wafer state. In order to solve this problem, the present invention provides a method for manufacturing a semiconductor device in a wafer state, as shown in FIG.
10 is brought into contact with the contact probes 3-1 to 10-2. At this time, two contact probes are brought into contact with one electrode pad.
One of the two is fixed to the ground potential, and the other is applied with an appropriate voltage to determine the contact resistance. If the contact resistance value is not an appropriate value, the electrical characteristic measurement is stopped, and if the contact resistance value is an appropriate value, the electrical characteristic measurement is continued.
【0024】また接触抵抗値が求まるのでこの接触抵抗
による測定電流の減少分を電流規格に加味する事で接触
抵抗による誤判定を防止する。Further, since the contact resistance value is obtained, a decrease in the measured current due to the contact resistance is added to the current standard to prevent erroneous determination due to the contact resistance.
【0025】また、一つの電極パッドに二つの接触用探
針を接触させているので、一方が突発的に接触抵抗が高
くなってももう一方が正常な接触をしていれば誤判定は
防げる。Further, since two contact probes are in contact with one electrode pad, erroneous determination can be prevented if one of the contact pads is in normal contact even if the contact resistance suddenly increases. .
【0026】[0026]
[第1の実施の形態] [構成の説明]次に、本発明の第1の実施の形態につい
て図面を参照して詳細に説明する。[First Embodiment] [Description of Configuration] Next, a first embodiment of the present invention will be described in detail with reference to the drawings.
【0027】図1の図1−1、1−2はウェハース状態
の半導体装置の電気的特性試験を行っている図である。
図1−1は平面図。図1−2は側面図である。FIGS. 1-1 and 1-2 in FIG. 1 are diagrams showing an electrical characteristic test of a semiconductor device in a wafer state.
FIG. 1-1 is a plan view. FIG. 1-2 is a side view.
【0028】図に示すようにプローブカード2には接触
用探針3−1,3−2,4−1,4−2,5−1,5−
2,6−1,6−2,7−1,7−2,8−1,8−
2,9−1,9−2,10−1,10−2が固定され、
接触用探針はそれぞれプローブカード2を介しては図示
されないLSIテスターの入出力端子および電源、接地
電位に接続される。接触用探針は半導体装置1の有する
電極パッド3〜10に接触している。As shown in the figure, the probe card 2 has contact probes 3-1, 3-2, 4-1, 4-2, 5-1 and 5-.
2,6-1,6-2,7-1,7-2,8-1,8-
2,9-1,9-2,10-1,10-2 are fixed,
The contact probes are connected to an input / output terminal of an LSI tester (not shown), a power supply, and a ground potential via the probe card 2. The contact probe is in contact with the electrode pads 3 to 10 of the semiconductor device 1.
【0029】但し、1つの電極パッドに対し従来と同程
度の接触面積を有する接触用探針2本が接触している。
接触用探針は各探針が電圧印加、電流印加、電圧測定、
電流測定が可能なようにそれぞれ独立してプローブカー
ドに固定され、図示されていないLSIテスターに接続
されている。However, two contact probes having the same contact area as the conventional one are in contact with one electrode pad.
For the contact probe, each probe applies voltage, applies current, measures voltage,
Each is independently fixed to a probe card so as to enable current measurement, and connected to an LSI tester (not shown).
【0030】[動作の説明]出力電流試験を例にとって
図1−1と図1−2にて動作説明を行う。[Explanation of Operation] The operation will be described with reference to FIGS. 1-1 and 1-2 using an output current test as an example.
【0031】なお、説明にあたっては入力端子3本3,
4,5、出力端子3本6,7,8、電源端子1本9、接
地端子1本10を有した半導体装置を想定し説明を行
う。In the description, three input terminals 3,
The description will be made on the assumption that the semiconductor device has 4, 5, three output terminals 6, 7, 8, one power terminal 9, and one ground terminal 10.
【0032】入力端子の電極パッド3〜5には接触用探
針3−1,3−2,4−1,4−2,5−1,5−2が
接触している。出力端子の電極パッド6〜8には接触用
探針6−1,6−2,7−1,7−2,8−1,8−2
が接触している。The contact probes 3-1, 3-2, 4-1, 4-2, 5-1 and 5-2 are in contact with the electrode pads 3 to 5 of the input terminals. Contact probes 6-1, 6-2, 7-1, 7-2, 8-1, 8-2 are provided on the electrode pads 6 to 8 of the output terminals.
Are in contact.
【0033】電源端子の電極パッド9には接触用探針9
−1,9−2が接触し、GNDパッド10には接触用探
針10−1,10−2が接触している。A contact probe 9 is provided on the electrode pad 9 of the power supply terminal.
-1, 9-2 are in contact with each other, and the contact probes 10-1, 10-2 are in contact with the GND pad 10.
【0034】接触用探針は全て独立であり、探針毎電圧
電流印加、電圧電流測定が可能となるように図示されて
いないLSIテスターに接続されている。The contact probes are all independent, and are connected to an LSI tester (not shown) so that voltage / current application and voltage / current measurement can be performed for each probe.
【0035】動作の説明には出力電流試験を例にして説
明する。The operation will be described using an output current test as an example.
【0036】出力電流試験の動作フローチャートを図3
に示す。FIG. 3 is a flowchart showing the operation of the output current test.
Shown in
【0037】出力電流試験を開始する場合、まず出力パ
ッド6〜8に接触している接触用探針6−2,7−2,
8−2を接地電位に固定する。出力パッド6〜8に接触
している接触用探針6−1,7−1,8−1には適切な
電圧Vnを印加する。この時の接触用探針6−1から6
−2へ流れる電流、接触用探針7−1から7−2へ流れ
る電流、接触用探針8−1から8−2へ流れる電流をそ
れぞれ測定する(In)。To start the output current test, first, the contact probes 6-2, 7-2,
8-2 is fixed to the ground potential. Appropriate voltage Vn is applied to contact probes 6-1 7-1 and 8-1 that are in contact with output pads 6-8. At this time, the contact probes 6-1 to 6
-2, the current flowing from the contact probes 7-1 to 7-2, and the current flowing from the contact probes 8-1 to 8-2 are measured (In).
【0038】次に接触用探針6−1,7−1,8−1に
印加した電圧Vnと測定した電流Inより接触抵抗Rn
を求める事ができる。Next, the contact resistance Rn is obtained from the voltage Vn applied to the contact probes 6-1, 7-1 and 8-1 and the measured current In.
Can be requested.
【0039】接触抵抗Rnが求められたら、この接触抵
抗が妥当な値かを判断する為、規格値を設け、その規格
を越える様であれば測定状態が適正でないと判断し電気
的特性の測定を中断する。When the contact resistance Rn is obtained, a standard value is set in order to determine whether the contact resistance is an appropriate value. If the contact resistance exceeds the standard, it is determined that the measurement state is not appropriate and the electrical characteristics are measured. Interrupt.
【0040】接触抵抗Rnが規格値より低い場合、半導
体装置の電気的特性試験測定を続ける。出力電流規格I
amin.に接触抵抗Rnによる出力電流減少分を加算
し適切な出力電流規格Ialimitを設定する。If the contact resistance Rn is lower than the specified value, the electrical characteristics test measurement of the semiconductor device is continued. Output current standard I
amin. And the output current decrease due to the contact resistance Rn is added to the value to set an appropriate output current standard Ialimit.
【0041】この出力電流規格Ialimitにて通常
の出力電流試験の良否判定を行う。The quality of a normal output current test is determined based on the output current standard Ilimit.
【0042】[第2の実施の形態] [構成の説明]次に、本発明の第2の実施の形態につい
て説明する。[Second Embodiment] [Explanation of Configuration] Next, a second embodiment of the present invention will be described.
【0043】第2の実施の形態の構成は第1の実施の形
態の構成と同じである。The configuration of the second embodiment is the same as the configuration of the first embodiment.
【0044】[動作の説明]出力電流試験を例にとって
説明をする。図1の図1−1、1−2、及び図4のフロ
ーチャートを参照すると、まず出力パッド6〜8に接触
している接触用探針6−1,6−2,7−1,7−2,
8−1,8−2をそれぞれ図示していないLSIテスタ
ーの電流計に接続する。GNDパッド10に接触してい
る接触用探針10−1,10−2は共に接地電位に接続
する。電源パッド9に接触している接触用探針9−1,
9−2を電源電位に接続する。[Explanation of Operation] An output current test will be described as an example. Referring to FIGS. 1-1 and 1-2 in FIG. 1 and a flowchart in FIG. 4, first, the contact probes 6-1, 6-2, 7-1, and 7-contacting the output pads 6 to 8. 2,
8-1 and 8-2 are respectively connected to an ammeter of an LSI tester (not shown). The contact probes 10-1 and 10-2 that are in contact with the GND pad 10 are both connected to the ground potential. A contact probe 9-1 in contact with the power supply pad 9,
9-2 is connected to the power supply potential.
【0045】出力電流試験を開始する場合、まず出力パ
ッド6〜8に接触している接触用探針6−2,7−2,
8−2を接地電位に固定する。同様に出力パッド6〜8
に接触している接触用探針6−1,7−1,8−1に適
切な電圧Vnを印加する。この時の接触用探針6−1か
ら6−2へ流れる電流、接触用探針7−1から7−2へ
流れる電流、接触用探針8−1から8−2へ流れる電流
をそれぞれ測定する(In)。When starting the output current test, first, the contact probes 6-2, 7-2,
8-2 is fixed to the ground potential. Similarly, output pads 6 to 8
An appropriate voltage Vn is applied to the contact probes 6-1, 7-1, and 8-1 that are in contact with. At this time, the current flowing from the contact probes 6-1 to 6-2, the current flowing from the contact probes 7-1 to 7-2, and the current flowing from the contact probes 8-1 to 8-2 are measured. (In).
【0046】次に接触用探針6−1,7−1,8−1に
印加した電圧Vnと測定した電流Inより接触抵抗Rn
を求める事が出来る。Next, the contact resistance Rn is calculated from the voltage Vn applied to the contact probes 6-1 7-1 and 8-1 and the measured current In.
Can be requested.
【0047】接触抵抗Rnが求められたら、この接触抵
抗が妥当な値か判断する為、規格値を設け、その規格を
越える様であれば測定状態が適正でないと判断し電気的
特性の測定を中断する。When the contact resistance Rn is obtained, a standard value is set in order to judge whether the contact resistance is an appropriate value. If the contact resistance exceeds the standard, it is judged that the measurement state is not appropriate and the measurement of the electrical characteristics is performed. Interrupt.
【0048】入力パッド3,4,5に接触している接触
用探針3−2,4−2,5−2をオープンにし、接触用
探針3−1,4−1,5−1を入力ピンに指定し図示し
ていないLSIテスターに接続する。The contact probes 3-2, 4-2, and 5-2 that are in contact with the input pads 3, 4, and 5 are opened, and the contact probes 3-1 and 4-1 and 5-1 are connected. Designate an input pin and connect to an LSI tester not shown.
【0049】そして出力電流試験を実施すると接触用探
針6−1,6−2,7−1,7−2,8−1,8−2に
てそれぞれ電流が測定される。同じ出力パッドに接触し
ている従来と同程度の接触面積を有する2本の接触用探
針で測定されたそれぞれの電流値を加算する。When the output current test is performed, the current is measured by the contact probes 6-1, 6-2, 7-1, 7-2, 8-1, and 8-2. The respective current values measured by two contact probes having the same contact area as the conventional one contacting the same output pad are added.
【0050】つまり接触用探針6−1の電流値と接触用
探針6−2の電流値を加算、接触用探針7−1の電流値
と接触用探針7−2の電流値を加算接触用探針8−1の
電流値と接触用探針8−2の電流値を加算するそして出
力電流試験規格と比較し、出力電流試験の良否判定を行
う。That is, the current value of the contact probe 6-1 and the current value of the contact probe 6-2 are added, and the current value of the contact probe 7-1 and the current value of the contact probe 7-2 are added. The current value of the adding contact probe 8-1 and the current value of the contact probe 8-2 are added and compared with the output current test standard to determine the quality of the output current test.
【0051】この様に同じ出力パッドに接触している従
来と同程度の接触面積を有する2本の接触用探針で測定
されたそれぞれの電流値を加算する事で電極パッドと接
触用探針との接触抵抗が突発的に高くてもその影響を小
さくすることが出来、誤判定を少なくする事が出来る。 [第3の実施の形態] [構成の説明] 図5を参照すると半導体装置の電極パッド1つに対して
プローブカードに固定されているそれぞれが従来と同程
度の接触面積を有する二股の接触用探針を接触させる。As described above, the electrode pads and the contact probe are added by adding the respective current values measured by the two contact probes having the same contact area as the conventional one in contact with the same output pad. Even if the contact resistance suddenly increases, the effect can be reduced, and erroneous determination can be reduced. [Third Embodiment] [Explanation of Configuration] Referring to FIG. 5, a bifurcated contact, each of which is fixed to a probe card with respect to one electrode pad of a semiconductor device and has the same contact area as a conventional one, is used. Bring the probe into contact.
【0052】第1の実施の形態では接触用探針はそれぞ
れ独立して図示していないLSIテスターに接続されて
いるが、第3の実施の形態では半導体装置の電極パッド
1つに対してプローブカードに固定されている二股の接
触用探針を図示しないLSIテスターに接続される。In the first embodiment, the contact probes are independently connected to an LSI tester (not shown), but in the third embodiment, a probe is provided for one electrode pad of the semiconductor device. The bifurcated contact probe fixed to the card is connected to an LSI tester (not shown).
【0053】[動作の説明]この様にすると第1の実施
の形態で説明した様な接触用探針と電極パッドとの接触
抵抗は測定できないが、複雑な測定手順が簡素化でき突
発的な接触抵抗の増加による誤判定を減少できる。動作
自体は従来の測定方法のままである。[Explanation of Operation] In this way, the contact resistance between the contact probe and the electrode pad as described in the first embodiment cannot be measured, but a complicated measurement procedure can be simplified and suddenly performed. Erroneous determination due to an increase in contact resistance can be reduced. The operation itself is the same as the conventional measurement method.
【0054】なお、上記各実施例は、半導体装置につい
て説明したが、本発明は、これに限ることはなく、電極
パッドに接触用探針を接触させることができる全ての電
子装置に適用可能である。Although each of the above embodiments has been described with reference to a semiconductor device, the present invention is not limited to this, and is applicable to all electronic devices capable of contacting a contact probe with an electrode pad. is there.
【0055】[0055]
【発明の効果】第1の効果は、ウェハース状態の半導体
装置の電気的特性測定において、電極パッドと接触用探
針との接触抵抗値を求める事が出来、その値によって測
定状態が良好なのか、不具合があるのかが判断出来る。The first effect is that in measuring the electrical characteristics of a semiconductor device in a wafer state, the contact resistance value between an electrode pad and a contact probe can be obtained. , It can be determined whether there is a defect.
【0056】その理由は、半導体装置の1つの電極パッ
ドに対し2本の接触用探針を接触させこの2本の接触用
探針間に電流を流す事で接触抵抗が求められる。この接
触抵抗値が適当であれば半導体装置の電気的特性測定を
継続し、異常に高ければ半導体装置の電気的特性測定を
停止し、接触抵抗による誤判定の発生防止が可能とな
る。The reason is that two contact probes are brought into contact with one electrode pad of the semiconductor device, and a current is caused to flow between the two contact probes to obtain a contact resistance. If the contact resistance value is appropriate, the measurement of the electrical characteristics of the semiconductor device is continued. If the contact resistance value is abnormally high, the measurement of the electrical characteristics of the semiconductor device is stopped.
【0057】第2の効果は、ウェハース状態の半導体装
置の電気的特性測定において、電極パッドと接触用探針
との接触抵抗値を求める事が出来、その接触抵抗値によ
る電流減少分測定規格を適正化する事で接触抵抗の影響
による誤判定の発生防止が可能となる。The second effect is that in measuring the electrical characteristics of a semiconductor device in a wafer state, the contact resistance value between the electrode pad and the contact probe can be obtained, and the measurement standard for the current decrease due to the contact resistance value can be determined. By optimizing, it is possible to prevent erroneous determination due to the influence of contact resistance.
【0058】その理由は、半導体装置の1つの電極パッ
ドに対し2本の接触用探針を接触させこの2本の接触用
探針間に電流を流す事で接触抵抗値が求められる。この
接触抵抗値による電流減少分を計算し測定規格を適正化
する事で接触抵抗の影響による誤判定の発生防止が可能
となる。The reason is that the contact resistance is determined by bringing two contact probes into contact with one electrode pad of the semiconductor device and flowing a current between the two contact probes. By calculating the amount of current decrease due to the contact resistance value and optimizing the measurement standard, it is possible to prevent erroneous determination due to the influence of the contact resistance.
【0059】第3の効果は、ウェハース状態の半導体装
置の電気的特性測定において、1つの電極パッドに対し
従来と同程度の接触面積を有する2本の接触用探針を接
触させ測定する事で、突発的な接触抵抗の増加による誤
判定を減少する事が出来る。A third effect is that, in the measurement of the electrical characteristics of a semiconductor device in a wafer state, two electrode probes having the same contact area as a conventional one are brought into contact with one electrode pad and measured. In addition, erroneous determination due to sudden increase in contact resistance can be reduced.
【0060】その理由は、従来と同程度の接触面積を有
する2本の接触用探針それぞれで電流測定を行い、それ
ぞれの測定値を加算する事で一方の接触用探針の接触抵
抗が突発的に増加してもその影響を減少する事が出来
る。これは抵抗を並列接続したのと同じであるので、接
触抵抗の影響を減少する事が出来る事がわかる。The reason is that current is measured with each of two contact probes having the same contact area as the conventional one, and the contact resistance of one contact probe is suddenly increased by adding the respective measured values. The effect can be reduced even if it increases. Since this is the same as connecting the resistors in parallel, it can be seen that the effect of the contact resistance can be reduced.
【0061】また一方の接触用探針に突発的な接触抵抗
の増大があった場合、もう一方が正常な接触をしていれ
ばその影響を少なくでき、半導体装置の電気的特性試験
での誤判定を防止できることがわかる。In the case where one contact probe suddenly increases in contact resistance, the effect can be reduced if the other contact probe is in normal contact. It can be seen that the judgment can be prevented.
【図1】本発明の平面図及び側面図である。FIG. 1 is a plan view and a side view of the present invention.
【図2】従来図(特開昭58−39025)である。FIG. 2 is a conventional view (Japanese Patent Application Laid-Open No. 58-39025).
【図3】本発明のフローチャートである。FIG. 3 is a flowchart of the present invention.
【図4】本発明のフローチャートである。FIG. 4 is a flowchart of the present invention.
【図5】本発明の平面図である。FIG. 5 is a plan view of the present invention.
1 半導体装置(LSI) 2 プローブカード 3,4,5 入力用電極パッド 3−1,3−2 入力用電極パッド3用接触探針 3−3 入力用電極パッド3用二股接触探針 4−1,4−2 入力用電極パッド4用接触探針 4−3 入力用電極パッド4用二股接触探針 5−1,5−2 入力用電極パッド5用接触探針 5−3 入力用電極パッド5用二股接触探針 6,7,8 出力用電極パッド 6−1,6−2 出力用電極パッド6用接触探針 6−3 出力用電極パッド6用二股接触探針 7−1,7−2 出力用電極パッド7用接触探針 7−3 出力用電極パッド7用二股接触探針 8−1,8−2 出力用電極パッド8用接触探針 8−3 出力用電極パッド8用二股接触探針 9 電源パッド 9−1,9−2 電源パッド9用接触探針 9−3 電源パッド9用二股接触探針 10 GNDパッド 10−1,10−2 GNDパッド10用接触探針 10−3 GNDパッド10用二股接触探針 11 ウェハース(LSI) 12 接触抵抗確認用素子 13 電極パッド 14 絶縁層 15 抵抗層 16 接触用探針 17 金属膜 DESCRIPTION OF SYMBOLS 1 Semiconductor device (LSI) 2 Probe card 3, 4, 5 Input electrode pad 3-1 and 3-2 Contact probe for input electrode pad 3 3-3 Bifurcated contact probe for input electrode pad 4-1 , 4-2 Contact probe for input electrode pad 4 4-3 Bifurcated contact probe for input electrode pad 5-1, 5-2 Contact probe for input electrode pad 5 5-3 Input electrode pad 5 Contact probe for output 6, 7, 8 Output electrode pad 6-1, 6-2 Contact probe for output electrode pad 6 6-3 Contact output probe for output electrode pad 6 7-1, 7-2 Contact probe for output electrode pad 7 7-3 Bifurcated contact probe for output electrode pad 7 8-1,8-2 Contact probe for output electrode pad 8 8-3 Bifurcated contact probe for output electrode pad 8 Needle 9 Power pad 9-1, 9-2 Contact probe for power pad 9 9-3 Bifurcated for power pad 9 Contact probe 10 GND pad 10-1, 10-2 Contact probe for GND pad 10 10-3 Bifurcated contact probe for GND pad 10 11 Wafer (LSI) 12 Contact resistance checking element 13 Electrode pad 14 Insulating layer 15 Resistance Layer 16 Contact probe 17 Metal film
フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G01R 27/02 G01R 1/06 G01R 31/26 H01L 21/66 Continuation of the front page (58) Field surveyed (Int.Cl. 7 , DB name) G01R 27/02 G01R 1/06 G01R 31/26 H01L 21/66
Claims (3)
探針を2本づつ接触させるステップと、該電子装置の同
一の電気特性を前記2本の接触用探針によりそれぞれ個
別に測定するステップと、前記測定した2個の測定値を
加算するステップと、を有することを特徴とする電気的
特性測定方法。A step of bringing two contact probes into contact with predetermined electrode pads of the electronic device;
One electrical characteristic is individually measured by the two contact probes.
Measuring separately, and calculating the two measured values
Adding the electrical characteristics.
用探針を2本づつ接触させるステップと、該半導体装置
の同一の電気特性を前記2本の接触用探針によりそれぞ
れ個別に測定するステップと、前記測定した2個の測定
値を加算するステップと、を有することを特徴とする電
気的特性測定方法。2. A step of bringing two contact probes into contact with predetermined electrode pads of the semiconductor device, and
The same electrical characteristics of each of the two contact probes
Measuring separately and the two measured measurements
Adding a value .
との接触抵抗を測定し、その値が所定の値を超える場合
は電気的特性の測定を中止することを特徴とする請求項
1又は2に記載の電気的特性測定方法。 3. The two contact probes and the electrode pad.
If the measured contact resistance exceeds the specified value
Stopping the measurement of electrical characteristics
3. The method for measuring electrical characteristics according to 1 or 2.
Priority Applications (1)
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JP29694597A JP3202669B2 (en) | 1997-10-29 | 1997-10-29 | Electrical characteristics measurement method |
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WO2007018186A1 (en) * | 2005-08-11 | 2007-02-15 | Tokyo Electron Limited | Apparatus and method for inspecting fine structure and inspection program |
US11187746B2 (en) * | 2019-03-26 | 2021-11-30 | Nuvoton Technology Corporation | Contact quality testing |
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