JP3190702B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

 [Object of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing structure for a semiconductor device, a sealed semiconductor device, and a method for manufacturing a semiconductor device. The present invention relates to a sealing structure, a semiconductor device, and a method of manufacturing the same, which can flexibly cope with a production mode of high-mix low-volume production and can be incorporated in an in-line production process.

[0002]

2. Description of the Related Art A conventional general resin-encapsulated semiconductor device has been obtained by a transfer molding method. According to this method, a tablet made of a powder of an epoxy molding material mainly composed of an epoxy resin and a filler is heated and melted, injected into a mold using a transfer molding machine, and subjected to high-temperature and high-pressure (160 to 180 ° C, 70 ° C). -100 kg / cm ² ), and a semiconductor chip is sealed with a cured epoxy resin composition. According to this method, since the epoxy resin composition completely covers the semiconductor chip, the reliability of the obtained resin-encapsulated semiconductor device is excellent, and since the mold is tightly molded, the appearance of the package is good. . Therefore, at present, most resin-encapsulated semiconductor devices are manufactured by this method.

[0003]

However, the package of the resin-encapsulated semiconductor device has recently been increasing in size and reduction in thickness, and this tendency is expected to increase in the future. In addition, the types of packages are increasingly diversified in the future, and there is a shift from conventional low-mix high-volume production to high-mix low-volume production. Such a tendency is disadvantageous for the conventional transfer molding method. That is, the transfer molding method is basically a method suitable for mass production of small varieties, but is not suitable for a flexible production mode such as small production of many varieties. Recent transfer molding machines have attempted to respond to flexible production by reducing the size of the mold and taking small lots, but this is not sufficient due to basic restrictions.

[0004] Further, the enlargement of the semiconductor chip and the accompanying enlargement of the package make it difficult to use the conventional epoxy molding material for transfer. The reason is that due to the increase in size, the thermal stress caused by the difference in the coefficient of thermal expansion between the semiconductor chip and the sealing resin increases, and cracks occur in the semiconductor chip and the sealing resin due to heating and thermal cycle tests during soldering. To do that.

Further, due to the tendency of the package to be thinner due to the spread of surface mounting, the strength of the sealing resin is reduced, and the above-mentioned crack generation phenomenon is more likely to occur. Despite improvements, it is difficult to keep up with this trend.

[0006] In response to the trend of increasing the number of pins of semiconductor devices, it has become difficult to manufacture a package having a number of pins of several hundreds or more by the conventional transfer molding method, and it is possible to cope with the increase in the number of pins. New packages need to be developed.

Further, as the speed of the semiconductor device increases, it is necessary to reduce the size of the package as much as possible and to reduce the dielectric constant of the package. New packages need to be developed.

Next, there is a problem of in-line manufacturing process. 2. Description of the Related Art The semiconductor device manufacturing process is fully automated, and the manufacturing is performed automatically and unattended on one line. However, in the process of encapsulating a semiconductor device, it is difficult to form the semiconductor device in-line by conventional transfer molding, the line is removed, and the production is performed by batch processing.

[0009] In the future, a method of manufacturing a resin-encapsulated semiconductor is aimed at completely unmanned and completely in-line, but the transfer molding method is basically a grasshopper treatment, and it is difficult to in-line the process. Various attempts have been made to make transfer molding machines unattended, but there are considerable difficulties in actual operation with full automation, and it is difficult to say that the transfer molding method itself is suitable for complete unmanned operation.

As described above, the issues relating to the resin-encapsulated semiconductor device in the future are to establish a flexible production mode suitable for high-mix low-volume production, to automate the production process, and to provide a production method suitable for in-line production. It is to develop a new package suitable for increasing the package size, reducing the thickness, increasing the number of pins, increasing the capacity, and increasing the speed.

SUMMARY OF THE INVENTION An object of the present invention is to provide a flexible encapsulating structure suitable for high-mix low-volume production, which is a mainstream production mode in the future, a semiconductor device sealed thereby, and a method of manufacturing the same. . [Configuration of the Invention]

[0012]

As a result of various studies to achieve the above object, the following method for manufacturing a semiconductor device using a sealing structure has been developed to achieve flexible production suitable for high-mix low-volume production. It is found that it is suitable for automation and in-line of the manufacturing process, and the semiconductor device manufactured by it is suitable for large-sized package, thinned, multi-pin, large-capacity and high-speed. We found that it was highly reliable.

That is, the present invention provides a first carrier
Used to seal the mounted semiconductor device and the semiconductor device
Composed of a substrate having a resin layer for the second carrier
Synchronized supply of mounted sealing components with each other by line
And covering the semiconductor device with the sealing structure.
The semiconductor device by sealing.
And a method of manufacturing a semiconductor device .

[0014] The present invention also provides a semiconductor device in which a semiconductor device is covered with a sealing structure comprising a substrate having a resin layer prepared for use in sealing the semiconductor device, and then sealed. Wherein the base comprises a thermoplastic resin layer and a thermosetting resin layer, the outer surface is a thermoplastic resin layer, and the semiconductor device side is a thermosetting resin layer. A method of manufacturing a semiconductor device, comprising arranging the sealing structure.

[0015]

The configuration of the present invention will be described more specifically.

The semiconductor device of the present invention is basically manufactured by the following method. The basic structure is a method for manufacturing a semiconductor device by combining a semiconductor device and a sealing structure characterized by comprising a base having a resin layer for sealing in advance, and combining and sealing the two. It is. As shown in FIGS. 1A and 1B, the sealing method is a method of covering and preventing only one side of a semiconductor device as schematically shown in a mounting mode, and FIG. 2A and FIG. From both sides of the semiconductor device as schematically shown in the embodiment,
There is a method of covering and sealing so as to be wrapped in a sandwich shape. In the figures, 1 is a sealing structure, 2 is a semiconductor element, 3 is a substrate, and 4 is a TAB or a carrier tape.

In the present invention, the semiconductor device and the sealing structure can be supplied in a line. By supplying the two in a one-to-one correspondence, merging and sealing, the encapsulation process of the semiconductor device can be completely inlined, and from the assembly of the semiconductor device to the encapsulation can be continuously performed. It can be performed in a simple process. This is a decisive advantage as compared to the conventional transfer molding method which necessarily requires batch processing.

FIG. 3 is a schematic diagram of a line for sealing one side of the semiconductor device 2 with the sealing structure 1, and FIG. 4 is a schematic diagram of a line for sealing both sides of the semiconductor device 2 with the sealing structure 1. FIG. These figures schematically show that it can be simply manufactured in a line, and specify the positional relationship between the semiconductor device 2 and the sealing structure 1, the sealing mechanism, the sealing process, and other detailed matters. is not. That is, the positional relationship, the sealing mechanism, the sealing step, and the like can be freely determined. In addition, in FIG. 4, the upper and lower sealing structures 1 may be sequentially sealed one by one, or may be simultaneously sealed.

Although details of the sealing method will be described later, the environment setting required for the sealing can be freely set on the line. For example, when heating is required for sealing, the semiconductor device 2 and the sealing structure 1 are heated in advance in the flow of the line with an optimal temperature profile, respectively, so that the best temperature conditions can be obtained at the time of combining and sealing. It can be designed to be As described above, the optimization of the condition setting leads to an improvement in productivity, a reduction in the product failure rate, and an improvement in product reliability.

In order to continuously produce, that is, to supply the semiconductor device 2 and the sealing structure 1 in a line in a synchronized manner so as to correspond one-to-one, to combine and seal, the semiconductor device 2 The sealing structure 1 needs to be supplied in an aligned manner. As a method of supplying the devices arranged in a line, the semiconductor device 2 and the sealing structure 1 are previously mounted on a carrier 5 such as a tape, a frame, or a tray, and the carrier 5 is supplied. Is supplied after being aligned through an alignment machine. Carriers are easier to handle than parts separately, so it is preferable to make them into carriers.

The semiconductor device 2 and the sealing structure 1 shown in FIGS. 3 and 4 may be independent from each other, or an arbitrary number may be connected by a carrier 5 such as a tape or a frame. It may be. When all of the packages are connected, the package can be handled in the form of being wound on a roll. When the packages are independent, the package can be supplied on a tray or the like.

As shown in FIGS. 3 and 4, the sealing may be performed by bringing the semiconductor device 2 and the sealing structure 1 into direct contact with each other while being placed on the carrier 5, or the robot may use one of the methods. The semiconductor device 2 or the sealing structure 1 may be carried from one carrier to the other carrier. In the case of supplying on a tray or the like, a robot or the like may bring the semiconductor device and / or the sealing member into contact with each other.

FIGS. 5A to 5D show an example in which the sealing structure 1 is mounted on a tape carrier 4, an example in which the sealing structure 1 is mounted on a frame and a carrier (or a cut tape carrier) 6, and a frame carrier. An example in which the components placed on the tray 7 are stacked on the tray 7 and an example in which the components placed on the tray 7 are stacked are shown. In the figure, the solid line on the vertical axis in (d) indicates the threshold for alignment.

Since the sealing step can be made in-line, the manufacturing method of the present invention becomes a flexible manufacturing method suitable for multi-product small-quantity production. That is, the encapsulation process can be incorporated into a flexible, high-mix low-volume production system of a semiconductor device production line. The total flexible multi-product small-volume production system including the sealing process enables the user to select the sealing components to be sealed in the sealing process according to the type of semiconductor device flowing into the line. This can be achieved by standing by.

The relationship between the semiconductor device and the sealing member is as follows:
Usually, a sealing structure formed in a shape suitable for the type of the semiconductor device is used. Of course, the sealing structure may be shared, and different shapes of sealing structures may be used for the same semiconductor device.

The type of the semiconductor device used in the present invention is not particularly limited. Wire bonded, TAB (Tape Automated Bonding) or flip chip may be used.

In the sealing structure of the present invention, the sealing resin layer is formed on the substrate in advance, or is formed on the substrate at the time of sealing. When forming at the time of sealing,
There is a method in which a resin is supplied during the sealing step or a resin layer is formed in advance on the semiconductor device side, and integrated with a base during sealing to form a sealing structure.

The term sealing structure of the present invention refers not only to the structure after sealing forming the package after sealing, but also to the structure before sealing used for sealing. It also means a construct.

The material and shape function of the base of the sealing structure used in the present invention are not particularly limited. The material of the base of the sealing structure may be any material as long as the resin layer is formed or formed at the time of sealing. The substrate may be a resin layer alone or another material such as a metal, ceramic, or composite material depending on the purpose of the function. The shape may be any shape suitable for sealing a semiconductor device. The layer may be formed as a single layer or as a multilayer, but in the case of a multilayer, warping may occur unless the coefficients of thermal expansion between the layers are uniform.
When it is necessary to multiply materials having different coefficients of thermal expansion, the thickness of each layer is changed, or the layers are formed, for example, by ABA.
It is possible to reduce by using a functionally graded material sandwiched from above and below, and by continuously changing the material.

The function and purpose of the sealing by the sealing member are protection, improvement of reliability such as moisture resistance, insulation, improvement of heat dissipation by charging and sealing, thinning, sealing of multi-pin devices, and the like. Improvement of handling characteristics such as speeding up of devices and ease of handling,
Anything can be used, such as ease of device burn-in test.

Further, the type, shape and function of the resin layer are not particularly limited. The type of the resin may be, for example, a thermosetting resin, a thermoplastic resin, a thermoplastic elastomer, a rubber, or a combination thereof.
The resin layer may have any shape, and can be freely selected according to the purpose of sealing. The resin layer may be formed on the entire surface or a part of the sealing member, and may have, for example, a special shape instead of a planar shape. The resin layer may be multilayered, and in this case, the above-mentioned precautions apply to the multilayering and the problem of thermal conductivity.

The function of the resin layer can also be freely selected according to the sealing function. Even if it is a structural material, it has a specific purpose (for example, insulation, moisture resistance, anti-static sealing, mechanical protection, shock absorber, It may be a functional material for improving heat dissipation, display, etc.) or an adhesive.

Hereinafter, specific examples of the present invention will be described in detail.

FIGS. 6A to 6D are an external view and a cross-sectional view of one structural example of the sealing structure according to the present invention. As the resin as the material of the sealing member, for example, a thermosetting resin, a thermoplastic resin, a thermoplastic elastomer, a rubber, or a combination thereof is used. Further, by combining a material other than the resin, for example, a metal or a ceramic, more excellent characteristics can be provided.

FIG. 7A shows a COB (Chip on Board) wire-bonded with the sealing member according to the present invention.
FIG. 7B is a perspective view showing the appearance in which is sealed.
(C) is a cross-sectional view, in which 8 is a wiring and 9 is a bonding wire.

FIG. 8A shows CO connected by TAB.
FIG. 8 is a perspective view showing the appearance in which B is sealed.
(B), (c), (d) and (e) are cross-sectional views thereof,
In the drawing, reference numeral 10 denotes a TAB lead.

FIG. 9A is a perspective view showing an external appearance in which the COB obtained by a method of connecting the semiconductor chip 2 to the substrate 3 with the bumps 11 interposed therebetween, such as a flip chip method or a micro bump method, is sealed. 9 (b) and 9 (c) are sectional views thereof.

FIG. 10 is a perspective view schematically showing an embodiment in which the lead frame 12 to which the semiconductor chip 2 is wire-bonded is sealed with the sealing structure 1.

FIG. 11 (a) is a perspective view showing the external appearance of the semiconductor device 2 connected to the TAB tape 4 in a sealed state, and FIGS. 11 (b), (c), (d) and (e). , (F)
Is a sectional view thereof. In this case, the processing can be performed in a form in which the package is wound on a roll, and by separating the semiconductor device from the tape, the package can be processed as shown in FIG.
An encapsulated semiconductor device as shown in (h) in a perspective view is obtained. FIG. 12 is a perspective view showing the appearance in which a PGA (Pin Grid Array) is sealed.

Next, the structure of the sealing member according to the present invention will be described.

FIG. 13 shows the simplest configuration.
It is made of a single-layer thermosetting resin or thermoplastic resin.
13 (a), (e), (i) and (m) show the appearance in a perspective view, and FIGS. 13 (c), (g), (k) and (o) show the cross sections of the respective central portions. It is shown in a typical manner. FIG.
(B), (f), (j), (n), and (q) show perspective views of the appearance of another configuration example with a border, and FIGS.
(H), (l), (p), and (r) show the respective central portions in cross section.

FIG. 14 shows a two-layer structure of the sealing structure. By forming two layers, two types of resins having different characteristics are combined, so that high functionality and high performance can be achieved.

For example, FIGS. 14 (a) to 14 (d) and (j) to (m) show that a thermoplastic resin 13 or a cured thermosetting resin 14 is provided on the outside, and a heat resistant resin is provided on the inside as compared with the thermoplastic resin 13. In this case, a low thermoplastic resin 15 is used. When heated from the outside using a hot plate, for example, at a temperature intermediate between the two heat resistances, the inner plastic resin 15 is plasticized, but the outer resin 13 or 14 is not changed. Therefore, the semiconductor device is easily sealed by the soft inner thermoplastic resin 15, but does not adhere to the hot plate or change shape due to the outer resin 13 or 14.

FIGS. 14 (e) to 14 (h) and (i) and (n) show a thermoplastic resin 13 or a cured thermosetting resin 14 on the outside and an uncured thermosetting resin 16 on the inside. Is used. When heated from the outside at a temperature higher than the melting temperature of the inner thermosetting resin 16 and lower than the heat deformation temperature of the outer thermoplastic resin 13 using, for example, a hot plate, the inner thermosetting resin 16 is liquefied. However, the outer thermoplastic resin 13 or 14 does not change, so that the semiconductor device has a soft inner thermosetting resin 16 or
Easily sealed by the outer thermoplastic resin 13
Or, thanks to 14, there is no attachment to the hot plate or deformation of the shape.

The sealing structure of the present invention can be further freely multilayered.

FIGS. 15A and 15B are cross-sectional views showing an example of a multi-layer structure having three or more layers. FIGS. 15A and 15B show intermediate structures in order to improve the mountability of the two-layer thermoplastic resin 13. Adhesive layer 1
7 is provided.

FIGS. 15C and 15D show examples in which a barrier layer 18 is provided on the outside in order to prevent moisture and gas entering the resin. The barrier layer 18 may be a resin film, a metal or a ceramic.

FIGS. 15 (e) and 15 (f) show examples in which the decorative layers 19 are provided on the outside in the configuration shown in FIGS. 15 (c) and 15 (d) in order to improve the appearance. FIGS. 15 (g) and 15 (h) show examples in which a film 20 on which the name of a semiconductor device or the like is printed is provided outside the structure shown in FIGS. 15 (e) and 15 (f).
5 (i) and (j) show examples in which a protection film 21 for protecting printing is provided outside the configuration shown in FIGS. 15 (g) and 15 (h).

FIGS. 16 (a) to 16 (v) are cross-sectional views showing examples of the structure of a sealing member provided with a metal layer. Can be expected to have effects such as sealing, improvement of heat dissipation, barrier of moisture and gas, and shielding. 16 (a) to 16 (h), (p)
Is an example in which a metal layer 22 is provided on the outside. In this configuration, even if the resin is heated to soften the resin, the metal layer 22 does not adhere to the hot plate or deform the shape. Absent.

FIGS. 16 (i) to (o) and (q) show an example in which the metal layer 22 is provided in the middle. In this configuration, since the metal layer 22 is not exposed, there is a danger of short-circuiting or the like. Can be prevented.

In particular, FIGS. 16 (b), (d), (e),
(H), (j), (k), (n), (o) to (q), in the case of a structure utilizing the internal space, the hollow package structure is formed by the strength of the metal layer 22. Can be prevented from being deformed.

FIGS. 16 (r) to 16 (v) show a structural example in which a mesh cloth 22a made of a metal fiber is provided in the middle.
Although there are effects such as improvement of the shield and toughness, there is an advantage that the weight can be further reduced as compared with using the metal plate 22.

The metal layer 22 may be formed by any method such as plating, vapor deposition, and coating, in addition to metal plates, metal films, and metal fibers.

FIGS. 17 (a) to 17 (v) are cross-sectional views showing examples of the structure of a sealing member provided with a ceramic layer 23. By providing the ceramic layer 23, the strength can be improved. Effects such as sealing against deformation, improvement in heat dissipation, and barrier for moisture and gas can be expected. The advantages are that there is no danger of short-circuit and that it is lighter than the metal layer.

FIGS. 17 (a) to 17 (h) and (q) show examples of the structure in which the ceramic layer 23 is provided on the outside. It does not adhere or deform its shape. 17 (i) to 17 (o) and 17 (q) show configuration examples in which a ceramic layer 23 is provided in the middle.

In particular, FIGS. 17 (b), (e), (h),
(J), (k), (n), (o) to (q), in the case of a structure utilizing the internal space, the strength of the ceramic layer 23 prevents the deformation of the hollow package structure. be able to.

FIGS. 17 (r) to 17 (v) show an example of a structure in which a mesh or a cloth 23a made of ceramic fibers is provided in the middle. Similar to the case where the ceramic plate 23 is used, deformation prevention sealing, barrier and toughness are provided. Although there are effects such as improvement, there is an advantage that it can be made lighter than using a ceramic plate.

The ceramic layer 23 may be formed by any method such as deposition, coating, etc., in addition to a ceramic plate, a ceramic film, and ceramic fibers.

FIGS. 18 to 22 show cross-sectional views of different examples of a sealing member provided with a composite material layer. By providing a composite material layer, the heat resistance can be improved. Effects such as reduction of the coefficient of thermal expansion, improvement of strength, elasticity, and toughness, and prevention of deformation can be expected. The composite material may be a functionally graded material.

FIGS. 18A to 18F show an example in which a composite material layer 24 in which particles of ceramics, metals, inorganic substances, organic substances, polymers, rubbers, etc. (hereinafter referred to as ceramics, etc.) are dispersed in a resin is provided. It is.

FIGS. 18 (a) and 18 (b) show an example of a structure composed of a single layer of a composite material 24 in which particles such as ceramics are dispersed in a resin. The matrix resin may be a thermosetting resin or a thermoplastic resin.

FIGS. 18 (c) to 18 (e) show an example of a structure composed of two layers. In the case of (c), (d) and (f), an uncured thermosetting resin or a thermoplastic resin is used as a ceramic or the like. This is an example in which a layer 24 of a composite material in which particles are dispersed is used inside, and a heat-resistant thermoplastic resin 13 or a cured thermosetting resin 14 is used outside. For example, even if the inside resin is softened by heating with a hot plate from the outside, the resin does not adhere to the hot plate due to the layer of the thermoplastic resin 13 on the outside.

FIG. 18E shows an example in which an adhesive resin 17 is provided around a resin plate 24 made of a composite material in which particles such as ceramics are dispersed in a resin. To seal the semiconductor device.

FIGS. 19 (a) to 19 (j) show a sealing structure in which a composite material layer 24a in which fibers of a cut ceramic, metal, inorganic substance, organic substance, polymer or the like are dispersed in a resin is provided. FIGS. 19A and 19B are cross-sectional views showing different configuration examples. FIGS. 19A and 19B are examples of a single layer of a composite material 24a in which cut fibers such as ceramics are dispersed in a resin. The resin may be a thermosetting resin or a thermoplastic resin.

FIGS. 19 (c) to 19 (j) show examples of two layers, and FIGS. 19 (c), (d) and (j) show ceramics cut into uncured thermosetting resin or thermoplastic resin. This is an example in which a layer 24a of a composite material in which fibers are dispersed is inside, and a heat-resistant thermoplastic resin 13 or a cured thermosetting resin 14 is provided outside the layer 24a. According to this configuration, for example, even if the inner resin is softened by heating from the outside with a hot plate, the resin does not adhere to the hot plate due to the outer plastic resin layer 13 (14).

FIG. 19 (e) shows an example in which an adhesive resin 17 is provided around a resin plate 24a made of a composite material in which fibers such as cut ceramics are dispersed in resin. The semiconductor device is sealed with the resin 17.

FIGS. 19 (f) to 19 (h) show a composite material layer 24a in which fibers of a cut ceramic or the like are dispersed in a thermosetting resin or a thermoplastic resin, and a thermosetting resin inside. This is an example in which a resin 16 or a thermoplastic resin 13 is provided. The outer composite material layer 24a is responsible for maintaining the strength of the package.

FIG. 19 (i) shows the thermosetting resin 14 (16).
Alternatively, a resin plate made of a thermoplastic resin 13 is provided with a bonding resin 17a formed of a composite material layer in which fibers of ceramics or the like cut into a resin are dispersed around the resin plate. At 17a, the semiconductor device is sealed.

FIGS. 20 (a) to 20 (j) show different constitutional examples of a sealing member provided with a composite material layer 24b in which particles such as ceramics and cut fibers such as ceramics are dispersed in a resin. Each is shown in cross section. FIGS. 20 (a) and 20 (b) show examples of a single layer of a composite material 24b in which particles of ceramics and the like and cut fibers of ceramics and the like are dispersed in a resin. It may be resin.

FIGS. 20 (c) to 20 (j) show an example composed of two layers. FIGS. 20 (c), (d) and (f) show an example in which uncured thermosetting resin or thermoplastic resin is added to particles such as ceramics. This is an example in which a layer 24b of a composite material in which fibers such as cut ceramics are dispersed is inside, and a heat-resistant thermoplastic resin 13 or a cured thermosetting resin 14 is arranged outside the layer 24b. In this configuration, for example, even if the inner resin is softened by heating with a hot plate from the outside, the resin does not adhere to the hot plate due to the layer 13 (14) of the outer thermoplastic resin or the like.

FIG. 20 (e) shows a composite material obtained by dispersing particles such as ceramics and cut fibers such as ceramics into a resin plate 13 (14, 16) made of a thermosetting resin or a thermoplastic resin. In an example in which the bonding resin 17b composed of the layer 24b is provided around the resin plate, the semiconductor device is sealed with the bonding resin 17b.

FIGS. 20 (g), 20 (h) and 20 (j) show a composite material layer 24b in which particles such as ceramics and cut fibers such as ceramics are dispersed in a thermosetting resin or a thermoplastic resin. This is an example in which a thermosetting resin 16 or a thermoplastic resin 13 is disposed inside the inside. The outer composite material layer 24b is responsible for maintaining the strength of the package.

FIG. 20 (i) shows a resin plate 24b made of a composite material in which particles of ceramics and the like and fibers of cut ceramics and the like are dispersed in a resin, and an adhesive resin 17 and the like are set around the resin plate. In this example, the semiconductor device is sealed with a bonding resin 17 or the like.

FIGS. 21 (a) to 21 (r) show cross sections of thermosetting resin or thermoplastic resin made of ceramics or the like.
It is sectional drawing which shows the mutually different structural examples of the sealing structure using the composite material 24c which was impregnated or laminated on the mesh.

FIGS. 21A to 21D show the composite material layer 24c.
21 (e), (f), and (f) of FIG.
(J) and (i) have a composite material layer 24c in which an uncured thermosetting resin or a thermoplastic resin is impregnated or laminated with a cloth or mesh made of fibers such as ceramics inside, and a heat resistant resin outside. This is an example in which a certain thermoplastic resin 13, a cured thermosetting resin 14, a metal 22, a ceramics 23 and the like are arranged. In this configuration, for example, even if the inner resin is softened by heating from the outside with a hot plate, the resin does not adhere to the hot plate due to the layer of the outer resin or the like.

FIGS. 21 (g), (h), (i), (k),
In (m), a layer 24c of a composite material made of a cloth or a mesh made of cured thermosetting resin and fibers of ceramics or the like is placed outside, and a thermoplastic resin 13, an uncured thermosetting resin 16 and the like are arranged inside. FIG. 2 is an example.
1 (n) to (r) are layers 24c of a thermosetting resin or a composite material made of a cloth or mesh made of a thermoplastic resin and fibers such as ceramics, the thermoplastic resin 13, the thermosetting resins 14, 16, the metal 22. This is an example of a three-layer structure including a ceramic 23 and ceramics.

FIGS. 22 (a) to 22 (h) show a case where the uncured thermosetting resin 16 or thermoplastic resin 13 layer is formed in the hollow (dent) portion in the case of the configuration example shown in FIG. This is an example in which a hollow portion is not formed inside the package. Examples of a method of forming an uncured thermosetting resin or a thermoplastic resin in a hollow (dent) portion include, for example, a method of pouring a molten uncured thermosetting resin into the hollow (dent), a shape of the hollow (dent). There is a method of fitting resin pellets cut out in the above.

The shape of the sealing structure used in the present invention is not particularly limited as described above. The thickness of the flake may be any thickness that is necessary and sufficient in consideration of the purpose of use. Normally, 0.1 to 1 mm is sufficient, and the size is also free. The optimum size may be determined according to the purpose of use, but usually, it is slightly larger than the semiconductor chip so that the chip is completely hidden. Often size. Of course,
The chip can be the same size and smaller than the chip. Further, there is no limitation on the number of layers of the sealing structure.

There are no restrictions on the form, and there is no limitation from a simple flat plate structure to a complicated structure having a bent portion, a curved surface portion, a projection, and the like. An optimal structure is used for each purpose.

A hollow structure and a solid structure are selected according to the purpose. For example, when sealing a semiconductor device having a delicate structure such as wire bonding, a hollow structure can be selected. Of course, by making the resin in contact with the semiconductor device sufficiently soft, it is possible to use even a non-hollow structure.

13 (b), (f), (j), (n) and (g) are perspective views, and FIGS. 13 (d) and 13 (h) show examples of the hollow structural member for sealing. , (L), (p),
(R) has a bordered structure or a recessed structure as shown in a cross-sectional view of each central part.

In manufacturing the sealing structure as described above,
For example, the following method is suitable for automation of production and in-line ratio.

FIG. 41 is a perspective view schematically showing a method of manufacturing the sealing structure. FIG. 41 shows a film (hereinafter, referred to as a “film”) made of the material of the sealing structure.
A hole is formed as shown in FIG. A film without a hole shown in FIG. 41B is used as a lower layer 32, and both layers are laminated as shown in FIG. 41C and cut vertically and horizontally to form a sealing as shown in FIG. 41D. Obtain a structure for use.

FIG. 42 shows another manufacturing method. FIG.
(A) Lower layer 32 which is a film without holes as shown in 1
An upper layer 31 made of resin or the like is patterned and printed in a desired shape to obtain a film as shown in FIG. 42 (b), which is cut vertically and horizontally to form a sealing structure as shown in FIG. 42 (c). Obtainable.

In the above two methods, various materials can be used for the upper layer and the lower layer depending on the purpose, and of course, the same material may be used. The upper layer and the lower layer may be two or more types of multiple layers.

As shown in FIG. 43 (a) as a perspective view and FIG. 43 (b) as a cross-sectional view, the film is press-formed, and the film provided with the depression is cut lengthwise and widthwise. As shown in the perspective views (d) and (f) of FIG.

Incidentally, a semiconductor device having a relatively durable structure such as TAB or flip chip does not necessarily need to have a hollow structure, and has a wider range of options. The hollow structure has a feature that the surface of the semiconductor device does not come into contact with the resin, whereas the non-hollow structure has a feature that the effect of protecting the semiconductor device from an external mechanical action is great.

Method for Simultaneously Forming and Forming a Sealing Structure Another manufacturing method of the present invention is to form a sealing structure at the time of sealing and to simultaneously form and seal the sealing structure. This is a method for manufacturing a semiconductor device sealed by a sealing structure.

As an example, a chip of a resin layer to be sealed at the time of sealing is supplied to the semiconductor device side, and then a ceramic plate (metal plate, resin plate, etc.) is supplied, and a sealing formed of the ceramic plate and the resin layer is supplied. There is a method in which sealing is performed at the same time as forming the stopping structure. FIG. 23 schematically shows an example of the embodiment. In the case of this embodiment, the chip 17 of the sealing resin layer supported by the carrier 5 is first adhered to the side of the semiconductor element 2 supported by the other carrier 5 and then sealed by the sealing structure. However, conversely, sealing may be carried out after being attached to a sealing member (such as a ceramic plate).

Specific Examples of Materials As described above, the type of the resin used in the present invention is not particularly limited, and may be a general thermosetting resin, a photopolymerizable (curable) resin, a thermoplastic resin, a thermoplastic elastomer, Rubber and the like can all be used, but what is actually used must be selected according to the purpose of use. For example, when there is a soldering step, it is necessary to take care not to cause a disadvantage in terms of heat resistance and the like.

Examples of the thermosetting resin preferably used include the following. That is, epoxy resin, polyimide resin, maleimide resin, silicone resin, phenol resin, polyurethane resin, urea resin, unsaturated polyester resin, melamine resin, diallyl phthalate resin, triazine resin, alkyd resin, formaldehyde resin, cyclopentadiene resin, furan resin Aniline resin, vinyl ester resin, acrylic resin, methacrylic resin, guanamine resin, polyhydroxybenzoic acid resin and the like. These resins may be used alone or in combination, and among these resins, a curing agent, a catalyst, a plasticity, a coloring agent, a flame retardant and other various additives may be contained. .

Representative examples of the photopolymerizable (curable) resin preferably used are listed.

Acrylic resins, methacrylic resins, unsaturated polyester resins, polyene / polythiol resins, spirane resins, epoxy resins, amino alkyd resins, styrene resins, butadiene resins, allyl resins, vinyl resins and the like can be mentioned.

Examples of the thermoplastic resin preferably used include the following. That is, polyamide, polyacetal, polycarbonate, polybutylene terephthalate, polyphenylene oxide, polyphenylene sulfide, polyarylate, polysulfone, polyether sulfone, polyether ketone,
Polyetheretherketone, polyamideimide, polyetherimide, polyimide, aromatic polyester, liquid crystal polymer, polyethylene terephthalate, polymethyl methacrylate, polyethylene, chlorinated polyethylene,
Polypropylene, chlorinated polypropylene, polybutadiene, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl acetate, phenoxy resin, polyvinylidene chloride, fluororesin, polyacrylonitrile, polyacrylonitrile butadiene styrene, polyacrylonitrile styrene, polyvinyl alcohol, polyacrylonitrile styrene Acrylic esters, polymethyl methacrylate butadiene styrene, vinyl chloride-vinyl acetate copolymer, ethylene-vinyl chloride copolymer, thermoplastic urethane resin, polyvinyl butyral, polymethyl pentene, polybutene, phosphazene, ionomer resin, and others, and these Modified resins, blends, alloys and the like. These resins may be used alone or in combination. These resins may contain a plasticity, a coloring agent, a flame retardant, and other various additives.

Representative examples of the thermoplastic elastomers preferably used include the following. That is,
Styrene, olefin, ester, urethane,
Examples include thermoplastic elastomers such as isoprene-based, butadiene-based, vinyl chloride-based, amide-based, and ionomer-based thermoplastic resins. These may be used alone or in combination, and may contain a plasticity, a colorant, a flame retardant, and other various additives.

The following are listed as typical examples of the rubber preferably used. That is, natural rubber, styrene butadiene rubber, butadiene rubber, isoprene rubber,
Nitrile rubber, butyl rubber, acrylonitrile butadiene rubber, chloroprene rubber, ethylene propylene rubber,
Ethylene vinyl acetate rubber, ethylene acrylic rubber, acrylic rubber, chlorinated polyethylene rubber, fluoro rubber, silicone rubber, urethane rubber, polysulfide rubber, shrimp chlorohydrin rubber, nobornene rubber, liquid rubber, (butadiene rubber, styrene butadiene rubber, acrylonitrile Butadiene rubber, polychloroprene rubber, polysulfide rubber, polyisoprene rubber, polyisobutylene rubber, butyl rubber) and the like. These may be used alone or in combination, and among them,
A plasticizer, a colorant, a flame retardant and other various additives may be contained.

Listed below are typical examples of organic fibers that are preferably used. Examples of synthetic fibers include nylon, acrylic, vinylon, vinylidene, polyvinyl chloride, polyester, polyethylene, polypropylene, benzoate, and polyacetal. System, polychloral system, polyurethane system, aramid system, phenol system, novoloid system, polyvinyl alcohol system, fluorine fiber, other chemical fiber, rayon system, cupra system, acetate fiber, natural fiber, cotton, hemp, silk And wool. These may be used alone or in combination, and may contain a plasticizer, a colorant, a flame retardant and other various additives.

As described above, as the material of the sealing member used in the present invention, there are metals, ceramics, inorganic substances, organic substances, composite materials and the like in addition to resin.
These are not particularly limited, and ordinary metals, ceramics, composite materials and the like can be used alone or in combination. Hereinafter, specific examples will be described, but this does not limit the present invention.

Preferable examples of the metal include:
For example, iron, copper, aluminum, nickel, chrome,
Zinc, tin, silver, gold, lead, magnesium, boron, titanium, zirconium, tungsten, molybdenum, cobalt, silicon, etc., and stainless steel, 42 nickel-
Alloys of these metals, such as iron alloys, brass, and duralumin, may be mentioned.

Examples of preferred ceramics and inorganic substances include oxides, nitrides, carbides and borides of the above metals.

Examples of preferred inorganic and ceramic fibers include glass, quartz, carbon, boron, silicon carbide, silicon nitride, aluminum nitride, alumina, zirconia, and potassium titanate fibers.

One example of a preferred composite material is:
Composite materials such as resin and resin, resin and metal, resin and ceramic, resin and inorganic, metal and ceramic, and metal and inorganic are given.

The shape of these materials is not limited, such as block shape, plate shape, film shape, thin film shape and fiber shape.

Functions and Effects of Thin Section The functions of the stopping structure used in the present invention include protection of semiconductor devices, securing of reliability, ease of handling (handling), a medium for converting an inner lead into an outer lead, Examples include a medium for a burn-in test of a semiconductor device.

The sealing structure covers a semiconductor chip, inner leads and the like to protect them physically and chemically, and functions as a package for preventing external moisture, dust and the like from acting on the surface of the semiconductor chip. Having. Therefore, clean rooms,
There is no need for air conditioning and temperature control rooms, so it can be handled in a normal atmosphere. In addition, it is easy to move and grasp this, which makes it easy to mount. Furthermore, the presence of this package eliminates the need for the user to be aware of the inner lead, and facilitates the burn-in test.

The semiconductor device according to the present invention has the following advantages in terms of reliability assurance, hand linking, mounting, and ease of testing.
It can handle at least equivalent to that obtained by the conventional transfer molding method. Especially when encapsulating large semiconductor devices, conventional products are liable to crack due to expansion due to heating and vaporization of moisture during soldering, and must be packed in moisture-proof packaging to prevent it. In contrast, the product of the present invention does not need to do so at all, so handling is very simple.

Also, in the case of thin mounting, in the package of the present invention, any thickness of the package can be achieved by reducing the thickness of the sealing structure. Can be realized, which is very advantageous for thin mounting.

Function and Effect of Resin Layer The function of the resin layer formed on the sealing member used in the present invention is to form the sealing member and bond the sealing member and the semiconductor device. And bonding the sealing members together. When a material other than a resin is used for the sealing structure, it is used for the purpose of bonding, strengthening, insulating, compounding, and the like of the material.

Sealing Method In the present invention, the sealing by the sealing member is performed by sealing the semiconductor device using the resin layer of the sealing member. Although the sealing method is not particularly limited, there are a method using resin fusion and dissolution, a method using curing, a method using an adhesive, and the like. Examples of the curing method include a heat curing method, a curing method using chemical substances such as moisture and oxygen, and an energy ray curing method using energy rays such as light, ultraviolet rays, and electron beams.

When sealing is performed using a thermoplastic resin, a method such as fusion of the resin by heating, fusion of the resin using the energy of laser or ultrasonic waves, a combination thereof, and bonding with an adhesive, etc. Is used.

When sealing is performed using a thermosetting resin, the resin is cured by heating, the resin is cured by using the energy of light or ultraviolet light, or both are used together, and a chemical substance such as water or oxygen is used. Hardening, bonding with an adhesive, and the like are used.

FIGS. 24A to 24D are block diagrams conceptually showing an example of a sealing step using a resin. FIG.
In (a) to (d), the process proceeds from left to right. FIG. 24A shows a case where a chip is sealed by thermosetting by using a sealing structure using a thermosetting resin for the resin layer. First, the sealing structure is supplied to the line 25 and heated to the softening point of the resin to soften the resin. Next, in a sealing step 26, the supplied chip and the sealing member are combined, and the resin is cured by heating the line 25.

FIGS. 24 (b) and 24 (c) show a case in which a chip is sealed by energy ray curing using a sealing structure using an energy ray curing resin for the resin layer. Sealing step 26
The sealing structure and the chip supplied in the step (2) are cured by irradiating an energy ray through the line (25). Further, in the case of FIG. 24C, sealing by the energy ray curing method is used as temporary sealing, and the main sealing is performed by thermal curing. FIG. 24 (d)
Shows a case where a chip is sealed by cooling and hardening using a sealing member using a thermoplastic resin for the resin layer. First, the sealing structure is supplied to the line 25, and the resin is heated to soften the resin, and the chip supplied in the sealing step 26 is softened to form the sealing structure. Let cool. Of course, some of these steps can be omitted or added freely. In the case where the post-curing step is omitted in FIG. 24A and the resin is cured with excess heat before sealing, and in the case of FIG. 24B, rapid sealing can be performed. The post-curing step increases the sealing reliability.

In the present invention, there is no particular limitation on the material and shape of the base portion such as the substrate or package on which the semiconductor device is mounted, as long as the sealing of the semiconductor device is not hindered. The material of the base portion may be any material such as metal, ceramics, plastics, and a composite thereof, and can be freely selected according to the purpose. Further, these materials may be used in a single layer or in a multilayer of two or more kinds.

On the other hand, the combination of the material of the base portion, the sealing member and the material is also free, and the quality of the device can be improved by selecting the combination.

For example, by using a material having high thermal conductivity as a base portion of a substrate or a package on which a semiconductor element is mounted, heat dissipation is improved. Materials with high thermal conductivity, such as metals, include copper, aluminum, iron, nickel, chromium, tin, zinc, silver, gold, lead, magnesium,
Examples include boron, titanium, silicon, zirconium, tungsten, molybdenum, cobalt, and the like, and alloys of the foregoing metals. For ceramics, oxides of the above metals,
Nitride, carbide, boride and the like can be mentioned.

Further, by using a combination of the above-described base portion and a sealing member made of a material having high thermal conductivity, it is possible to further improve the heat radiation.

On the other hand, as another example, an example is shown in which a semiconductor device is sealed using a sealing structure having a metal layer on a substrate having a shield layer. FIG. 44 is a cross-sectional view showing a state where a semiconductor that has been flip-chip bonded onto a substrate is sealed using a sealing structure. The substrate 3 has a shield layer. The sealing structure has a three-layer structure. The upper layer 31 and the lower layer 32 are formed of a resin layer, and the intermediate layer 33 is formed of a metal. The intermediate layer 33 bumps the ground electrode 35 on the substrate 3,
They are connected by solder or the like 36. By sealing with the above structure, the semiconductor element is shielded from an external electric field and noise, and malfunction due to the external electric field and noise and electrostatic breakdown due to static electricity can be prevented.

[0120]

[Function] In-line and flexible multi-product small-lot production By the method of manufacturing a semiconductor device according to the present invention, the encapsulation process becomes very easy not only for the batch process but also for the continuous production on the line. From semiconductor chips to final semiconductor devices, in-line batch production becomes possible.

FIG. 25 is a schematic diagram of in-line production according to the present invention, and shows semiconductor chips AZ having different types and shapes.
Can be freely supplied to the line by the switching device 27. For example, chip B arbitrarily selected
Is supplied to the next assembly line 28. In the assembly line 28, die bonding and inner bonding are performed, and assembly such as wire bonding, TAB, and flip chip is performed. The sealing components a to z which are packages corresponding to the chips A to Z are set so as to be freely supplied to the line by the sealing component switching supply device 29, and the flowing chip B is detected. The switching supply device 29 supplies the corresponding sealing member b, and the sealing is performed in the next assembly line 26. If necessary, the semiconductor device is passed through a line 30 such as heat curing, light curing, and heat fusion. Is obtained.

The above description merely shows the concept of in-line production of the present invention, and the details can be freely changed or added.

[0123] By such in-line processing, a flexible production mode of high-mix low-volume production in the sealing step has become possible. Switching device 27 and assembly line 28
Has a flexible line suitable for high-mix low-volume production, and provides flexibility in synchronization with it.
, The entire line becomes a flexible line.

As described above, it has been clarified that the present invention makes it possible to flexibly set up a production system for high-mix low-volume production.

The present invention is also directed to providing a highly reliable package which is another object of the present invention and is compatible with the package being large and thin. As shown in the above, large and thin packages, which were impossible with the conventional technology, can be sealed, and sufficient reliability can be secured.

The encapsulation according to the present invention is a very simple method of covering a semiconductor device with an encapsulating structure, and encapsulation of any shape is possible in principle. It can easily cope with a large and thin package. Definitively different from conventional transfer molding, the configuration of the package can be freely changed, so you can freely select from resins, ceramics, metals, composite materials, fibers, etc., and seal it with a highly reliable package with favorable characteristics can do. In other words, cracks due to thermal stress during solidification of large and thin packages, which have been a problem in the conventional transfer molding method, do not occur in the package of the present invention. Therefore, the present invention provides an optimal method for encapsulating a semiconductor device that is becoming larger and thinner in the future.

Correspondence to multi-pin, high-speed devices According to the present invention, a preferable package can be provided for multi-pin, high-speed semiconductor devices.

That is, the package according to the present invention has a TA
B, flip chip, wire bonding, etc.
It can be applied to any type of multi-pin device, and as described above, is a very simple sealing means, so that it can be freely sealed regardless of the number of pins of the device.

With the increase in the speed of the device, it is required to reduce the size of the package as much as possible and to reduce the dielectric constant of the package. However, the sealing means according to the present invention has a size substantially equal to that of the semiconductor chip. It is easy to seal with a package. Also, unlike transfer molding, the material of the sealing structure can be freely selected, so that the use of a material having a small dielectric constant makes it easy to reduce the dielectric constant of the package.

Therefore, the present invention provides an optimum method for sealing a semiconductor device, which has an increasing number of pins and a higher speed in the future.

[0131]

Next, the present invention will be described with reference to specific examples.

Example 1 Using thermoplastic resin 13 as shown in FIG.
26A, a film-like sealing structure as shown in a perspective view and in FIG. 26C in a sectional view was prepared.

Thermoplastic resin poly-4-methylpentene
FIG. 26E is a perspective view using FIG.
6 (g), a film-like sealing structure as shown in cross section was prepared.

Using a fluororesin 13 of a thermoplastic resin, a film-like sealing member as shown in a perspective view in FIG. 26 (i) and in a cross section in FIG. 26 (k) was prepared.

Thermoplastic resin polyphenylene oxide 1
26 (m) in perspective and FIG.
(O) A film-like sealing member as shown in cross section was prepared.

26B using a thermoplastic resin polyphenylene sulfide 13 in a perspective view and FIG.
(D) A film-like sealing structure as shown in cross section was prepared.

Using a thermoplastic resin polyetherketone 13, a film-like sealing member as shown in a perspective view in FIG. 26 (f) and in a cross section in FIG. 26 (h) was prepared.

Using the thermoplastic resin polysulfone 13, a film-like sealing member as shown in a perspective view in FIG. 26 (j) and in a cross section in FIG. 26 (l) was prepared.

FIG. 2 shows an example in which the thermoplastic resin polyimide 13 is used.
A film-like sealing member as shown in perspective in FIG. 6 (n) and in cross section in FIG. 26 (p) was prepared.

Using a thermoplastic resin liquid crystal polymer 13,
26 (q), and a film-shaped sealing structure as shown in cross section in FIG. 26 (r) was prepared.

Using the uncured thermosetting polyimide resin 16, a film-shaped sealing member was formed as shown in FIG. 27A in a perspective view and in FIG. 27B in a sectional view. .

Using the uncured thermosetting polyimide resin 16, a film-like sealing member as shown in a perspective view in FIG. 27B and a cross section in FIG. 27D was prepared. .

Using the uncured thermosetting polyurethane resin 16, a film-shaped sealing member as shown in a perspective view in FIG. 27 (e) and a cross section in FIG. 27 (g) was prepared. .

Using the uncured thermosetting silicone resin 16, a film-like sealing structure as shown in FIG. 27 (f) in perspective and in FIG. 27 (h) in cross-section was prepared. .

Example 2 The following two kinds of thermoplastic resins having different heat resistances were selected, and poly-4-methylpentene-113 was placed inside and polyether sulfone 13 was placed outside. A film-shaped sealing member as shown in cross section was prepared.

Two kinds of thermoplastic resins having different heat resistances are selected, and polyacrylonitrile 13 is arranged on the inside and polyetherimide 13 is arranged on the outside, and a film-shaped sealing as shown in FIG. A stop structure was created.

Two kinds of thermoplastic resins having different heat resistances are selected, and an ethylene-vinyl acetate copolymer 13 is disposed inside and a polyether ketone 13 is disposed outside, so that a cross section as shown in FIG. A film-shaped sealing member was prepared.

Two kinds of thermoplastic resins having different heat resistances are selected, and polybutene-113 is disposed on the inside and polyphenylene sulfide 13 is disposed on the outside, and a film-shaped sealing as shown in FIG. Structure was created.

The uncured epoxy resin 16 was placed inside and the polyether sulfone 13 was placed outside, and a film-like sealing structure as shown in cross section in FIG. 28 (e) was prepared.

The uncured polyimide resin 16 was placed inside and the polyether ketone 13 was placed outside, and a film-like sealing structure as shown in cross section in FIG. 28 (f) was prepared.

An uncured polyurethane resin 16 is arranged inside and a polyetherimide 13 is arranged outside, and FIG.
A film-like sealing member as shown in section in FIG.

The uncured silicone resin 16 was disposed inside and the polyimide 13 was disposed outside, thereby forming a film-like sealing structure as shown in cross section in FIG. 28 (h).

An uncured epoxy resin 16 is placed inside and polybutylene terephthalate 13 is placed outside, and FIG.
(I) A film-like sealing member as shown in cross section was prepared.

A fluororesin 13 was disposed on the inner side and a polyimide 13 was disposed on the outer side, thereby producing a film-like sealing structure as shown in cross section in FIG.

Two types of thermoplastic resins having different heat resistances are selected, and a polycarbonate 13 is disposed inside and a polyetheretherketone 13 is disposed outside, and a film-shaped sealing as shown in FIG. Structure was created.

An uncured epoxy resin 16 was disposed inside and an aromatic polyester 13 was disposed outside, thereby forming a film-like sealing structure as shown in cross section in FIG. 28 (j).

Example 3 A film-like sealing structure as shown in cross section in FIG. 29 (a), with the polycarbonate 13 inside, the aromatic polyester 13 outside, and the epoxy resin 17 as an adhesive layer in the middle Created body.

Fluorine 13 on the inside, polyphenylene sulfide 13 on the outside, polyimide 17 as an adhesive layer in the middle
To form a film-like sealing structure as shown in cross section in FIG. 29 (b).

Ethylene-vinyl chloride copolymer 1 inside
3. Polyvinylidene chloride was disposed as a barrier 18 in the middle and polypropylene 13 was disposed on the outside, thereby producing a film-shaped sealing structure as shown in cross section in FIG. 29 (c).

An uncured epoxy resin 16 is arranged inside and a polyether sulfone 13 is arranged outside, and FIG.
A film-like sealing member as shown in section in FIG.

An uncured epoxy resin 16 on the inside, a polyarylate 13 on the outside, polyvinyldene chloride 1
8. Polyethylene terephthalate 20 on which semiconductor device names and the like are printed, and polymethacrylate 21 as a protective layer disposed on the outermost layer to form a film-like sealing structure as shown in cross section in FIG. did.

On the inside, poly-4-methylpentene-11
3. Polyacrylate 13, polyvinylidene chloride 18, polyethylene terephthalate 20 on which semiconductor device names and the like are printed outward, and polymethacrylate 21 as a protective layer disposed on the outermost layer. A film-like sealing structure as shown was prepared.

Example 4 An uncured epoxy resin 16 was placed inside and an insulated stainless steel 22 was placed outside, and a film-like sealing structure as shown in cross section in FIG. Created.

Using polycarbonate 13 on which aluminum 22 was vapor-deposited, a film-shaped sealing structure as shown in cross section in FIG.

With polybutene-1 13 on the inside, polyetherketone 13 on the middle and copper 22 on the outside, FIG.
(C) A film-shaped sealing member as shown in cross section was prepared.

Uncured epoxy resin 16 on the inside, polyacetal 13 in the middle, nickel (plating) layer 22 on the outside
To form a film-like sealing structure as shown in cross section in FIG. 30 (d).

An uncured polyimide resin 16 is provided on the inside, an aluminum plate 22 is provided in the middle, and polyphenylene sulfide 13 is provided on the outside to form a film-like sealing structure as shown in cross section in FIG. did.

A polyarylate 13 is disposed inside, a stainless steel cloth 22 is disposed in the middle, and a liquid crystal polymer 13 is disposed outside.
A film-like sealing structure as shown in cross section in FIG.

A fluororesin 13 was provided on the inside, a stainless steel mesh 22 was provided in the middle, and a liquid crystal polymer 13 was provided on the outside. Thus, a film-like sealing structure as shown in cross section in FIG.

Example 5 An uncured silicone resin 16 was placed inside and a quartz glass plate 23 was placed outside, and a film-like sealing structure as shown in cross section in FIG.

A film-like sealing structure as shown in cross section in FIG. 31B was prepared by disposing the polycarbonate 13 inside and the quartz glass plate 23 outside.

Fluororesin 13 inside, adhesive layer 1 in the middle
3. With aluminum nitride 23 placed on the outside, FIG.
(C) A film-shaped sealing member as shown in cross section was prepared.

A film-like sealing structure as shown in cross section in FIG. 31D was made of a quartz glass plate 23 having an epoxy resin 16 for sealing inside.

An uncured polyimide resin 16 is disposed inside, alumina 23 is disposed in the middle, and polyetherketone 13 is disposed outside, to form a film-shaped sealing structure as shown in cross section in FIG. did.

On the inside, poly-4-methylpentene-11
3. A carbon fiber cloth 23 was disposed in the middle, and the liquid crystal polymer 13 was disposed on the outside. Thus, a film-shaped sealing structure as shown in cross section in FIG.

A fluororesin 13 was provided on the inside, an epoxy resin 14 was provided in the middle, and a glass fiber cloth 23 was provided on the outside. Thus, a film-like sealing structure as shown in cross section in FIG. .

Example 6 Uncured epoxy resin 2 in which quartz glass powder was dispersed
Using No. 4, a film-like sealing member as shown in cross section in FIG.

An uncured silicone resin 24 in which quartz glass powder and silicone rubber are dispersed is disposed on the inner side, and polyphenylene sulfide 13 is disposed on the outer side.
A film-like sealing member as shown in section in FIG.

A fluororesin 24 in which quartz glass powder is dispersed and a polyimide resin 24 in which quartz glass powder is dispersed are arranged on the inner side, and a film-like shape as shown in cross section in FIG. A sealing structure was prepared.

An uncured epoxy resin 24 in which silicon nitride powder is dispersed, and an aluminum nitride plate 23
To form a film-like sealing structure as shown in cross section in FIG. 32 (d).

Example 7 Epoxy resin 2 in which fibers of cut quartz glass were dispersed
Using 4a, a film-like sealing member as shown in cross section in FIG. 33 (a) was prepared.

An uncured silicone resin 24a having glass fiber and silicone rubber dispersed therein and a polyphenylene sulfide 13 disposed outside are shown in FIG.
(B) A film-like sealing member as shown in cross section was prepared.

A fluororesin 24a in which cut aramid fibers are dispersed and a polyimide resin (cured product) 24 in which quartz glass powder is dispersed are disposed on the outside, and FIG.
(C) A film-shaped sealing member as shown in cross section was prepared.

An uncured epoxy resin 16 on the inside and an epoxy resin 2 containing silicon nitride fibers cut out on the outside are dispersed.
By disposing 4a, a film-like sealing structure as shown in cross section in FIG.

On the inside, poly-4-methylpentene-11
3. An epoxy resin (cured product) 24a in which the cut carbon fibers were dispersed was arranged on the outside to prepare a film-shaped sealing structure as shown in cross section in FIG.

An uncured epoxy resin 24a in which the cut glass fibers are dispersed and an aluminum nitride plate 23 are arranged on the outside, and a film-like sealing structure as shown in cross section in FIG. Created body.

An uncured polyimide resin 24a in which cut glass fibers are dispersed and an alumina plate 23 are disposed on the outside, and a film-like sealing structure as shown in cross section in FIG. It was created.

Example 8 Using an uncured epoxy resin 24b in which cut quartz glass fibers and quartz glass powder were dispersed, FIG. 34 was used.
(A) A film-shaped sealing member as shown in cross section was prepared.

An uncured silicone resin 24b having glass fiber, quartz glass powder and silicone rubber dispersed therein and a polyphenylene sulfide 24 having quartz glass dispersed therein are disposed on the inner side. A film-shaped sealing member as shown in cross section was prepared.

An uncured polyimide resin 24b in which cut aramid fibers and quartz glass powder are dispersed is disposed inside, and an epoxy resin (cured product) 24 in which quartz glass powder is dispersed is disposed outside. A film-like sealing structure as shown in section c) was prepared.

An uncured epoxy resin 24b in which silicon nitride fibers and silicon nitride powder cut inside are dispersed,
An epoxy resin (cured material) 24b in which silicon nitride fibers and silicon nitride powder are dispersed by cutting outside is arranged,
A film-like sealing structure as shown in cross section in FIG. 34 (d) was prepared.

An epoxy resin (cured product) 24b in which a fluorocarbon resin 13 and a cut of carbon fiber and silicon carbide powder are dispersed is disposed on the inner side, and a film-like shape as shown in cross section in FIG. Was prepared.

Example 9 Using a composite material 24c composed of a quartz glass cloth and an uncured epoxy resin, a film-shaped sealing member as shown in cross section in FIG. 35A was prepared.

Using a composite material 24c made of a quartz glass cloth and a fluororesin, a film-like sealing structure as shown in cross section in FIG. 35B was prepared.

Using a composite material 24c composed of quartz glass cloth and poly-4-methylpentene-1, FIG.
(C) A film-shaped sealing member as shown in cross section was prepared.

Using a composite material 24c composed of a quartz glass cloth and an uncured polyimide resin, a film-like sealing structure as shown in cross section in FIG. 35D was prepared.

A composite material 24c composed of a silicon nitride cloth and an uncured silicone resin is disposed on the inner side, and a polyether sulfone 24 in which quartz glass powder is dispersed is disposed on the outer side. Such a film-like sealing member was prepared.

By arranging the fluororesin 13 on the inner side and the composite material 24c made of carbon fiber cloth and epoxy resin on the outer side, a film-like sealing structure as shown in cross section in FIG. did.

An epoxy resin adhesive 17 is provided on the inside, and a composite material 24 made of glass fiber cloth and epoxy resin is provided on the outside.
By disposing c, a film-like sealing member as shown in cross section in FIG. 35 (g) was prepared.

An uncured polyimide resin 24 in which quartz glass fibers and silicon nitride powder cut inside are dispersed.
(b) A composite material 24c composed of a quartz glass cloth and an epoxy resin was arranged on the outside to form a film-shaped sealing structure as shown in cross section in FIG. 35 (h).

An uncured epoxy resin 24a in which cut quartz glass fibers are dispersed, a composite material 24c made of a carbon fiber cloth and an epoxy resin in the middle, and an acrylic resin 13 are arranged on the outside. ), A film-like sealing member as shown in cross section was prepared.

A composite material 24c made of quartz glass cloth and fluororesin is provided on the inside, a copper plate 22 is provided in the middle, and polyethylene terephthalate 13 is provided on the outside. A film-shaped sealing as shown in the sectional view of FIG. Structure was created.

Example 10 An uncured epoxy resin 16 was placed on the inside, and a composite material 24c made of quartz glass cloth and epoxy resin was placed on the outside, and a film-shaped seal as shown in cross section in FIG. A stop structure was created.

An uncured epoxy resin 16 is placed inside, a composite material 24c made of an alumina fiber cloth and epoxy resin is placed in the middle, and an alumina plate 23 is placed outside.
(B) A film-like sealing member as shown in cross section was prepared.

An uncured epoxy resin 16 is arranged inside, a composite material 24c made of aramid fiber cloth and epoxy resin is arranged in the middle, and an aluminum plate 22 which is insulated is arranged outside, and a sectional view is shown in FIG. 36 (c). Such a film-like sealing member was prepared.

A composite material 2 made of uncured polyimide resin 16 on the inside and quartz glass cloth and fluororesin on the outside
By placing 4c, a film-like sealing structure as shown in cross section in FIG.

An epoxy resin 16 is disposed inside, a composite material 24c made of quartz glass cloth and epoxy resin is disposed in the middle, a stainless steel plate 22 is disposed outside the composite material 24c, and an acrylic resin 13 is disposed outside the composite material 24c. A film-like sealing member as shown in section in FIG.

Example 11 Three types of sealing members were prepared. First, a two-layer structure in which the inside is made of a film of a fluororesin 13 and the outside is made of a film of a polyimide resin 14 as shown in a cross section in FIG. Is poly-4-
Methylpentene-113, a film having a four-layer structure composed of a film in which a thin layer of aluminum 22 is sandwiched between both sides by polysulfone 13 on the outside, and thirdly, the inside is uncured as shown in cross section in FIG. The epoxy resin 16 has a two-layer structure made of polyarylate 13 on the outside.

The epoxy resin 16 is obtained by heating and melting a composition composed of a novolak type epoxy resin, a novolak type phenol resin, and a curing catalyst (triphenylphosphine) to form a B-stage.
It was designed to remelt at 00 ° C and cure at 200 ° C in 10 seconds.

[0210] The following four types of semiconductor devices were prepared. First, wire the silicon LSI on the substrate
COB bonded, second, TAB bonded silicon LSI to carrier tape, third,
Fourth is a COB in which TAB of a GaAs LSI is bonded on a substrate, and fourthly, a COB in which a GaAs LSI is flip-chip bonded on a substrate.

The sealing member and the semiconductor device were mounted on a carrier, respectively, and the two were synchronized and flowed into a line. In the case of COB, the sealing structure is set so as to be sealed from one side. In the case of TAB, the structure can be freely selected from only one side or both sides. The types of semiconductor devices are freely switched, and settings are made so that any combination can be made. This switching is computer-programmed so that it can be automatically synchronized with the line flow. In the case of sealing from both sides, it was set so that the same structure or another type of structure could be freely combined.

Both carriers are allowed to be heated and programmed so that when the two carriers come close again, the temperature is set so that the sealing structure and the semiconductor device can be combined under the optimum temperature condition in each case. Set to. The set temperatures are 250 to 300 ° C., 250 ° C., and 100 ° C. for the first to third sealing members, respectively.
~ 200 ° C.

When both carriers re-approached, an appropriate pressure was applied to the sealing member, and the sealing member and the semiconductor device were combined. Immediately after merging or after an arbitrary time elapses,
The connection between the sealing member and the carrier was disconnected, and the carrier was moved away while the sealing member was combined with the semiconductor device.

In the case of the first and second sealing members, the sealing is performed by melting the thermoplastic resin adhered to the semiconductor device and covering the semiconductor device. By cooling this, a semiconductor device sealed with the solidified resin was obtained. In the case of the third sealing structure,
The thermosetting resin that is in close contact with the semiconductor device dissolves, covers the semiconductor device, and is then cured to seal. By cooling this, a semiconductor device sealed with the solidified resin was obtained.

As described above, the semiconductor device was sealed in-line to obtain a semiconductor device in which three types of sealing members and four types of semiconductor devices were freely combined.

Example 12 A pair of polybutylene terephthalate pieces 13 as shown in cross section in FIG. 40 was used as a sealing member, and a TA bonded to a carrier tape was used as a semiconductor device.
Using B, sealing was performed from both sides. In this case, the sealing member was heated to 150 ° C. and fused by applying ultrasonic waves. TAB sealed as described above was obtained.

Example 13 As a sealing member, a quartz glass plate to which polycarbonate was attached was used, and a semiconductor device bonded to a substrate by TAB was sealed from one side. The sealing was performed by heating the resin to 180 ° C. to melt it, and by thermocompression bonding.

Example 14 As a sealing member, a quartz glass plate to which an ultraviolet curable resin melting at 80 ° C. was adhered was used, and a semiconductor device wire-bonded to a substrate was sealed from one side. Sealing was performed by heating the resin to 80 ° C., melting the resin, uniting the resin, and irradiating ultraviolet rays from the quartz glass plate side to cure the resin.

Embodiment 15 FIG. 64 is a sectional view showing a state in which a semiconductor element is sealed using a sealing member. The semiconductor element 2 wire-bonded to the substrate 3 made of glass was sealed from one side using a sealing structure. The sealing structure is composed of two layers as shown in FIG. 64, the upper layer 31 is made of an alumina plate, and the lower layer 32 is made of an ultraviolet curable resin that melts at 80 ° C. For sealing, an ultraviolet-curing resin was stuck on an alumina plate.
After heating and melting at 0 ° C., the glass substrate was combined with the glass substrate on which the semiconductor element was mounted, and was irradiated with ultraviolet rays from the glass substrate side to cure the ultraviolet curable resin.

FIG. 64 is a cross-sectional view showing a state where the semiconductor element is sealed using the sealing member and the semiconductor element is sealed using the sealing member. The semiconductor element 2 wire-bonded to the opaque substrate 3 was sealed from one side using a sealing structure. The sealing structure is composed of two layers as shown in FIG. 64, the upper layer 31 is composed of transparent polymethylpentene,
The lower layer 32 is made of an ultraviolet curable resin that melts at 80 ° C.
The sealing is performed by heating and melting the sealing structure obtained by bonding the ultraviolet curable resin to a transparent polymethylpentene plate at 80 ° C., and then combining with the opaque substrate on which the semiconductor element is mounted. UV irradiation was performed from the plate side to cure the UV-curable resin.

FIG. 65 is a sectional view showing a state in which a semiconductor element is sealed using a sealing structure. A semiconductor device 2 TAB-bonded to an opaque substrate 3 was sealed from one side using a sealing structure. The sealing structure is composed of three layers as shown in FIG. 65, the upper layer 31 is a transparent plate of polymethylpentene, the intermediate layer 33 is an opaque plate, serving as a light shielding plate, and irradiates the device with ultraviolet light. Fusegu. Lower layer 3
Reference numeral 2 denotes an ultraviolet curable resin that melts at 80 ° C. The seal is
After the above-mentioned sealing member was heated and melted, it was combined with an opaque substrate on which a semiconductor element was mounted, and was irradiated with ultraviolet rays from the plate side of polymethylpentene to cure the ultraviolet curable resin.

Example 16 A composite material made of quartz glass cloth and cured epoxy resin was used on the outside and a composite material made of quartz glass cloth and uncured epoxy resin was used on the inside as the sealing member. , QFP (Quad Inline Flat Packag) bonding 20mm square semiconductor chip to lead frame
e) Type semiconductor devices were sealed. Sealing is 100
This was performed by sandwiching the sealing member heated to 200 ° C. from both sides of the semiconductor device.

For comparison, a QFP obtained by transfer-forming the above-mentioned semiconductor device with a usual epoxy molding compound for semiconductor encapsulation was prepared, and the reliability was compared with the package obtained in Example 16. .

When both were soldered to a printed circuit board by solder reflow, the package of Example 16 was formed without any problem. However, in the case of the comparative example, the resin was cracked and was not practical.

When both were subjected to a thermal cycle test at -65 to 200 ° C., there was no problem with the package of Example 16, but in the case of the comparative example, the resin was cracked and was not practical.

Further, when both were examined by a pressure cooker test at 120 ° C., there was no problem with the semiconductor device in the package of Example 16 even after 1000 hours, but in the case of the comparative example, the device was sealed in 20 hours. Corrosion occurred and it was not practical.

Example 17 A film made of a thermoplastic resin polycarbonate having holes as shown in FIG. 45 (a) was used as the upper layer 31, and there was no hole made of a thermoplastic resin polycarbonate as shown in FIG. 45 (b). The film was the lower layer 32. Upper layer 31
And the lower layer 32 were laminated to form a two-layer film as shown in FIG. 45 (c). This is cut vertically and horizontally, and FIG.
A sealing structure as shown in FIG.

As shown in FIG. 45 (a), a film made of an uncured thermosetting resin epoxy resin having holes formed thereon is used as the upper layer 31 and is made of a thermoplastic resin polyether sulfone as shown in FIG. 45 (b). The film without holes was used as the lower layer 32. The upper layer 31 and the lower layer 32 are laminated to form FIG.
A two-layer film as shown in (c) was prepared. This was cut vertically and horizontally to form a sealing structure as shown in the perspective view of FIG. 45 (d).

As shown in FIG. 45A, a film made of an uncured thermosetting resin polyimide having holes formed thereon is used as the upper layer 31 and a hole made of an insulated aluminum plate as shown in FIG. The film without the film was used as the lower layer 32. An upper layer 31 and a lower layer 32 were laminated to form a two-layer film as shown in FIG. 45 (c). This was cut vertically and horizontally to form a sealing structure as shown in the perspective view of FIG. 45 (d).

As shown in FIG. 45 (a), a film made of thermoplastic resin polyetherketone having square holes as shown in FIG. 45 (a) is used as the upper layer 31 and made of a nitrogen-aluminum lamix plate as shown in FIG. 45 (b). The film without holes was used as the lower layer 32. The upper layer 31 and the lower layer 32 are laminated to form FIG.
A two-layer film as shown in FIG. 5 (c) was prepared. This was cut vertically and horizontally to form a sealing structure as shown in the perspective view of FIG. 45 (d).

As shown in FIG. 45 (a), a film made of glass fiber cloth impregnated with an epoxy resin of an uncured thermosetting resin having holes formed therein is used as the upper layer 31.
The lower layer 32 was a film having no holes made of a composite material composed of an alumina fiber and a cured thermosetting epoxy resin as shown in FIG. An upper layer 31 and a lower layer 32 were laminated to form a two-layer film as shown in FIG. 45 (c). This was cut vertically and horizontally to form a sealing structure as shown in the perspective view of FIG. 45 (d).

Example 18 An uncured UV thermosetting resin acrylate layer (upper layer 32) was pattern-printed on a thermoplastic resin polycarbonate film (lower layer 31) as shown in FIG. 46 (a). As a result, a film composed of two layers of resin as shown in FIG. 46 was formed. This was cut vertically and horizontally to form a sealing structure as shown in the perspective view of FIG.

Example 19 A film made of a thermoplastic resin ethylene-vinyl chloride copolymer having holes as shown in FIG. 47 (a) was used as the upper layer 31, and a thermoplastic resin as shown in FIG. 47 (b) was used. The non-porous film made of polyvinylidene chloride is applied to the intermediate layer 33.
And a film without holes made of thermoplastic resin polypropylene was used as the lower layer 32. Upper layer 32, middle layer 33 and lower layer 3
2 were laminated to form a three-layer film as shown in FIG. This was cut vertically and horizontally to form a sealing structure as shown in a perspective view in FIG. 47 (d).

As shown in FIG. 47A, a film made of an uncured polyimide resin having a square hole is used as the upper layer 31, and a hole made of a tin-plated polyacetal film shown in FIG. A film without a hole was defined as an intermediate layer 33 and a film without holes formed of polyetherketone was a lower layer 32. Upper layer 32, middle layer 33 and lower layer 3
2 were laminated to form a three-layer film as shown in FIG. This was cut vertically and horizontally to form a sealing structure as shown in a perspective view in FIG. 47 (d).

Example 20 FIG. 48 (a) is a perspective view, and FIG. 48 (b) is a cross-sectional view, in which a thermoplastic resin layer 13 is formed. The thermoplastic resin layer 13 was formed by pressing to form recesses in a film made of polyimide of a thermoplastic resin. The thermoplastic resin layer 13 was cut lengthwise and widthwise to form a sealing structure as shown in perspective views in (c) and (e) and sectional views in (d) and (f).

FIG. 48A shows a perspective view of the composite material layer 24c, and FIG. 48B shows a sectional view of the composite material layer 24c. The composite material layer 24c was formed by pressing a composite material film made of a quartz glass cloth and an uncured epoxy resin to form recesses. Composite material layer 24c
Is cut vertically and horizontally, and perspective views are shown in (c) and (e).
(F) A sealing structure as shown in the sectional view was prepared.

An uncured thermosetting resin layer 16 having a depression as shown in FIG. 48 (a) and a sectional view as shown in FIG. 48 (b) was formed. The uncured thermosetting resin layer 16 was formed by pouring an uncured thermosetting resin epoxy resin into a mold and then curing. Uncured thermosetting resin layer 1
6 is cut vertically and horizontally, and perspective views are shown in (c) and (e).
(D) and (f), a sealing structure as shown in the sectional view was prepared.

FIG. 48A shows a perspective view of the composite material layer 24a, and FIG. 48B shows a sectional view of the composite material layer 24a. The composite material layer 24a was formed by pressing a composite material film made of cut quartz glass fibers and thermoplastic resin polyurethane to form recesses. The composite material layer 24a is cut vertically and horizontally, and perspective views are shown in (c) and (e).
(D) and (f), a sealing structure as shown in the sectional view was prepared.

Example 21 A multilayer film 47 having a depression formed as shown in a perspective view in FIG. 49A and a sectional view in FIG. 49B was prepared. The multilayer film 47 was formed by laminating a film made of polycarbonate on the upper layer 31 and a film made of polyetherketone on the lower layer 32 to form a two-layer film, and pressing it to form recesses. Cut this vertically and horizontally,
(C) and (e) are perspective views, and (d) and (f) are cross-sectional views as shown in FIG.

FIG. 49A shows a perspective view, and FIG. 49B shows a cross-sectional view of a multilayer film 47 having recesses. The multilayer film 47 is formed by laminating a film made of thermoplastic resin polybutylene terephthalate on the upper layer 31 and a film made of insulated metal aluminum on the lower layer 32, forming a two-layer film, and pressing it to form recesses. Formed. The multilayer film 47 was cut lengthwise and breadthwise to prepare a sealing structure as shown in perspective views in (c) and (e) and in cross-sectional views in (d) and (f).

FIG. 49A shows a perspective view, and FIG. 49B shows a cross-sectional view of a multilayer film 47 having depressions. The multilayer film 47 is composed of a composite material film made of a quartz glass cloth and an uncured thermosetting resin triazine resin in the upper layer 31, and a composite material made of the cut quartz glass fiber and the thermoplastic resin polyphenylene oxide in the lower layer 32. Were laminated to form a two-layer film, which was pressed to form recesses. The multilayer film 47 is cut vertically and horizontally, and perspective views are shown in (c) and (e).
(D) and (f), a sealing structure as shown in the sectional view was prepared.

Example 22 A multilayer film 47 having a depression as shown in a perspective view in FIG. 50 (a) and a sectional view in FIG. 50 (b) was prepared. The multilayer film 47 is formed by pressing a three-layer film in which a metal aluminum film (intermediate layer 33) having a high barrier property is interposed between thermoplastic resin polyethylene terephthalate films (upper layer 31 and lower layer 32). Formed. The multilayer film 47 is cut vertically and horizontally, and (c),
(E) A sealing structure as shown in a perspective view and (d) and (f) in a sectional view was prepared.

A multilayer film 47 having a depression as shown in a perspective view in FIG. The multilayer film 47 is pressed to form a recess in a three-layer film in which a stainless steel cloth (intermediate layer 33) is interposed between two thermoplastic resin polyalate films (upper layer 31, lower layer 32). Formed. The multilayer film 47 was cut lengthwise and breadthwise to prepare a sealing structure as shown in perspective views in (c) and (e) and in cross-sectional views in (d) and (f).

A multilayer film 47 having a depression as shown in a perspective view in FIG. 50A and a sectional view in FIG. 50B was prepared. The multilayer film 47 is formed by depositing a metal nickel layer (upper layer 31) on a thermoplastic resin polyethersulfone film (intermediate layer 33) and further laminating a thermoplastic resin polyetherimide film (lower layer 32). It was formed by pressing to form recesses in the film composed of layers. The multilayer film 47 is cut vertically and horizontally, and (c),
(E) A sealing structure as shown in a perspective view and (d) and (f) in a sectional view was prepared.

A multilayer film 47 having a depression as shown in a perspective view in FIG. The multilayer film 47 is made of a composite material film (upper layer 31) composed of a quartz glass cloth and an uncured thermosetting resin epoxy resin, and a composite material composed of a quartz glass cloth and a cured thermosetting resin maleimide resin. It was formed by pressing a three-layer film in which a high barrier metal stainless steel film (intermediate layer 33) was interposed between the films (lower layer 32) to form recesses. The multilayer film 47 was cut lengthwise and breadthwise to prepare a sealing structure as shown in perspective views in (c) and (e) and in cross-sectional views in (d) and (f).

Embodiment 23 FIGS. 51 (a) and 51 (c) are perspective views, and FIGS. 51 (b) and 51 (d) are cross-sectional views each showing a case (lower layer 32) made of a ceramic aluminum nitride having depressions. A perforated film (upper layer 31) made of a thermoplastic resin polyimide is adhered to the inside of, and perspective views are shown in (e) and (g).
(F) and (h) were prepared as shown in the sectional view of the sealing member.

FIGS. 51 (a) and 51 (c) are perspective views thereof.
A holed layer of uncured UV-curable resin acrylate is formed inside a glass case (lower layer 32) having depressions as shown in the respective cross-sectional views in (b) and (d) (upper layer). 31), (e) and (g) are perspective views,
(F) and (h), a sealing structure as shown in the sectional view was prepared. 51 (a) and 51 (c) are perspective views thereof.
(B) and (d), a thermoplastic resin polyethylene terephthalate (upper layer 31) is molded inside a case (lower layer 32) made of ceramics alumina having depressions as shown in the respective sectional views. (E), (g)
A sealing structure as shown in a perspective view and a sectional view in (f) and (h) was prepared.

FIGS. 51 (a) and 51 (c) are perspective views thereof.
A thermoplastic resin polysulfone (upper layer 31) is molded into the inside and outside of a case (lower layer 32) made of ceramic silicon carbide in which depressions are formed as shown in the cross-sectional views of (b) and (d). , (I) and (k) were prepared as perspective views, and (j) and (i) as cross-sectional views were prepared.

FIGS. 51 (a) and (c) are perspective views thereof.
A thermoplastic resin polycarbonate (upper layer 31, lower layer 32) is provided inside and outside of a case (intermediate layer 33) made of metallic aluminum having recesses as shown in the cross-sectional views of (b) and (d). Mold molding, (i),
A sealing structure was prepared as shown in a perspective view in (k) and a sectional view in (j) and (i).

Example 24 A structure having a shape as shown in the perspective view of FIG. 45D was prepared. The structure is composed of two layers, the upper layer 31 is made of polyphenylene sulfide, and the lower layer 32 is made of alumina. The melted uncured thermosetting resin epoxy resin 13 was poured into the recessed portion of the structure to form a sealing structure as shown in FIG. 52 (a).

A component having a shape as shown in FIG. 47 (d) was prepared. The structure is composed of three layers, the upper layer 31 is made of polyurethane, the intermediate layer 33 is made of stainless steel, and the lower layer 32 is made of polymethyl methacrylate. The uncured thermosetting silicone resin 16 cut into the shape of the dent was fitted into the dent portion of the component to form a sealing component as shown in FIG. 52 (b).

Embodiment 25 FIG. 53 shows a conceptual diagram of a system of an apparatus for producing a sealing structure of the present invention. In this embodiment, the structure of the sealing member was formed by an apparatus as shown in FIG.

In this embodiment, a continuous manufacturing method was performed as shown in FIG. The method for producing the sealing structure of the present invention can be performed by a batch method, but the continuous method is more suitable and advantageous for in-line processing.

First, in a film supply step, a roll-shaped film 42, which is a material of a sealing structure, was continuously supplied to a line in a required number of layers. In this example, two films were supplied to produce a two-layer sealing structure. When three or more layers are laminated, the number of rolls may be increased in the film supply step, and the number of supplied films may be three or more.

In the next laminating step, these films were laminated by the roll 43. When heating was required for lamination, lamination was performed while heating.

Subsequently, the film laminated in the cutting step was cut lengthwise and crosswise by a film cutting machine 44 to obtain a stopping structure 47 which was cut off one by one.

The sealing members 47 cut into individual pieces are separated and difficult to handle as they are, and therefore, it is preferable that the sealing members 47 be arranged and accommodated. In particular, in order to seal semiconductor devices inline, it is required to arrange them.

In this embodiment, the cut sealing members 47 are mounted on a tape carrier in a line. The tape carry 45 is continuously supplied, and is wound continuously after the sealing structure is mounted.

Although not shown in the figure, it was also possible to use a method of arranging and arranging on a tray instead of a tape carrier.

In order to change the production system of this embodiment to a batch system, a film is cut into appropriate lengths and supplied.
What is necessary is just to laminate by a press etc.

Embodiment 26 FIG. 54 is a cross-sectional view showing a state where a semiconductor element is sealed using a sealing member. The semiconductor element 2 flip-chip bonded was placed on the substrate 3 having the shield layer 34 and sealed from one side using a sealing structure having a metal layer. A shield layer 34 made of aluminum was provided on the substrate 3 made of polyimide. As shown in FIG. 54, the sealing member has a hollow shape and has a three-layer structure. The intermediate layer 33 is made of tin, the upper layer 31 is made of polyetherketone, and the lower layer 32 is made of polyimide. I have.
An end of the metal layer as the intermediate layer 33 is connected to a ground electrode 35 on the substrate by soldering 36. Soldering 3
Reference numeral 6 denotes a bump formed before connecting the intermediate layer 33 to the ground electrode. Methods for connecting the metal layer and the electrode include soldering, mechanical contact with pressure, melting, connection using an anisotropic conductive film, and connection using conductive particles. It is possible. By sealing as described above, the entire semiconductor element was shielded from external electric fields and the like.

FIG. 55 is a cross-sectional view showing a state where the semiconductor element is sealed using the sealing structure. Shield layer 34
The semiconductor element 2 flip-chip bonded was placed on the substrate 3 having the above structure, and was sealed from one side using a sealing structure having a metal layer. A shield layer 34 made of copper was provided on a substrate 3 made of bismaleimide-triazine. Further, as shown in FIG. 56, the sealing structure has a three-layer structure,
The intermediate layer 33 is made of a copper alloy, the upper layer 31 is made of polyurethane, and the lower layer 32 is made of epoxy resin. An end of the metal layer as the intermediate layer 33 is connected to a ground electrode 35 on the substrate through a lead 37 by soldering 36. By sealing as described above, the entire semiconductor element was shielded from external electric fields and the like.

FIG. 56 is a sectional view showing a state in which a semiconductor element is sealed using a sealing structure. The semiconductor element 2 bonded by TAB was sealed from both sides using two sealing structures each having a metal layer. As shown in FIG. 56, each sealing member has a three-layer structure, the intermediate layer 33 is made of a tin-plated copper alloy, which is a metal, the upper layer 31 is made of polyimide, and the lower layer 32 is made of epoxy resin. I have. The TAB ground lead 35 and the metal layer which is the intermediate layer 33 of the sealing structure are connected by soldering 36.
By sealing as described above, the entire semiconductor element can be shielded from an external electric field or the like.

FIG. 57 is a cross-sectional view showing a state where a semiconductor element using the sealing structure is sealed. Shield layer 37
The semiconductor element 2 bonded by TAB was placed on the substrate 3 having the above structure, and was sealed from one side using a sealing structure having a metal layer. A shield layer 34 made of carbon fiber cloth was provided on a substrate 3 made of epoxy resin. The sealing member has a three-layer structure, the intermediate layer 33 is made of an iron-nickel alloy, the upper layer 31 is polyester, and the lower layer 32 is
It is made of epoxy resin. The intermediate layer 33 protrudes as a connection lead (wiring) 37 connecting the ground electrode 35 on the substrate, and is connected by soldering 36. By sealing as described above, the entire semiconductor element was shielded from external electric fields and the like.

Embodiment 27 FIG. 58 is a cross-sectional view showing a state where a semiconductor element is sealed using a sealing member. Package 41 made of copper
Was bonded by die bonding, and the TAB was sealed with a sealing structure from above. The sealing structure has two layers, the upper layer 31 is made of thermoplastic resin polyetherketone, and the lower layer 32 is made of uncured thermosetting resin epoxy resin. T
An insulating film 39 is sandwiched between the metal package and the TAB lead 10 so that the AB lead does not contact the metal container. The uncured thermosetting resin was cured after sealing the semiconductor element.

FIG. 59 is a cross-sectional view showing a state where a semiconductor element is sealed using a sealing structure. The semiconductor element 2 was die-bonded to a package made of metal aluminum via an insulating film 39, and the semiconductor element 2 and leads 37 were connected by wire bonding 9. Thereafter, the semiconductor element was sealed from above with a hollow sealing member. In the sealing structure, the upper layer 31 is made of thermoplastic resin polyetherimide, and the lower layer 32 is made of thermoplastic resin polyphenylene sulfide. An insulating film 42 is interposed between the package 38 and the lead 37 so that the lead does not contact the metal container.

FIG. 60 is a cross-sectional view showing a state where the semiconductor element is sealed using the sealing structure. TAB was die-bonded to a package 38 made of alumina, and then the semiconductor element 2 was sealed from above with a hollow sealing member. The TAB lead 10 is
Through an adhesive film 40. In the sealing structure, the upper layer 31 is made of a thermoplastic resin polymethyl methacrylate, and the lower layer 32 is made of an uncured UV-curable resin acrylate. The uncured UV-curable resin was cured after sealing the semiconductor element.

FIG. 61 is a cross-sectional view showing a state where a semiconductor element is sealed using a sealing structure. TAB was die-bonded to a heat spreader 41 made of aluminum via an insulating film 39. Thereafter, the TAB was sealed from one side with a sealing structure. The sealing structure is the upper layer 3
Numeral 1 is made of thermoplastic resin polyimide, and lower layer 32 is made of uncured thermosetting resin silicone resin. The uncured thermosetting resin was cured after sealing.

FIG. 62 is a cross-sectional view showing a state where the semiconductor element is sealed using the sealing structure. TA on the heat spreader 41 made of ceramic aluminum nitride
B was die-bonded. Thereafter, TAB was sealed with a sealing structure. In the sealing structure, the upper layer 31 is made of a thermoplastic resin polycarbonate, and the lower layer 32 is made of an uncured UV-curable resin acrylate. Uncured UV curable resin is
After sealing, it was cured.

FIG. 63 is a cross-sectional view showing a state where the semiconductor element is sealed using the sealing structure. The semiconductor element 2 was die-bonded to the heat spreader 41 made of ceramic silicon nitride, and the semiconductor element 2 and the lead 37 were connected by wire bonding 9. Thereafter, the semiconductor element 2 was sealed with a sealing member. In the sealing structure, the upper layer 31 is made of thermoplastic polyacetal, and the lower layer 32 is made of polyacetal.
Consists of an uncured thermosetting epoxy resin. The uncured thermosetting resin was cured after sealing.

[0271]

As described in detail above, according to the present invention, a flexible production system suitable for high-mix low-volume production becomes possible, and batch production from semiconductor chips to final semiconductor devices can be performed in-line. became.

Further, according to the present invention, highly reliable encapsulation suitable for a large-sized chip, a multi-pin, thin, large-capacity, high-speed device becomes possible, and its industrial value is great.

[Brief description of the drawings]

FIGS. 1A to 1D are cross-sectional views schematically showing an embodiment in which a semiconductor device is sealed from one side using a sealing structure according to the present invention.

FIG. 2 is a cross-sectional view schematically showing an embodiment in which a semiconductor device is sealed from both sides by using the sealing structure according to the present invention.

FIG. 3 is a cross-sectional view schematically showing an embodiment in which a semiconductor device is sealed using the sealing structure according to the present invention.

FIGS. 4A and 4B are cross-sectional views schematically showing an embodiment in which a semiconductor device is sealed using the sealing member according to the present invention.

FIGS. 5A to 5D are perspective views schematically showing an embodiment in which the sealing members according to the present invention are arranged and arranged.

6 (a) to 6 (d) are a perspective view and a cross-sectional view showing a sealing structure according to the present invention.

FIGS. 7A to 7C are a perspective view and a cross-sectional view showing a state in which a COB in which a semiconductor device is wire-bonded to a substrate is sealed with a sealing structure according to the present invention.

FIG. 8 (a) to (e) show C connected by TAB.
The perspective view and sectional drawing which show the state which sealed OB with the structure for sealing which concerns on this invention.

9A to 9C are a perspective view and a cross-sectional view showing a state in which a COB in which a semiconductor device is flip-chip bonded to a substrate is sealed with a sealing structure according to the present invention.

FIG. 10 is a perspective view schematically showing an embodiment in which a semiconductor device wire-bonded to a lead frame is sealed with a sealing structure according to the present invention.

11A to 11H are a perspective view and a cross-sectional view showing a state in which TAB is sealed with a sealing structure according to the present invention.

FIG. 12 is a perspective view showing a state in which the PAG is sealed with the sealing member according to the present invention.

13 (a) to (r) are a perspective view and a cross-sectional view showing a different configuration example of the sealing member according to the present invention.

14 (a) to (n) are cross-sectional views showing different configuration examples of a sealing structure according to the present invention, which has two layers.

15 (a) to (j) are cross-sectional views showing different configuration examples of a sealing structure according to the present invention having three or more layers.

FIGS. 16 (a) to (v) are cross-sectional views showing different structural examples of the sealing structure according to the present invention having a metal layer.

17 (a) to (v) are cross-sectional views showing different examples of the structure for sealing according to the present invention having a ceramic layer.

18 (a) to (f) are cross-sectional views showing different structural examples of the sealing structure according to the present invention having a composite material layer in which particles are dispersed.

FIGS. 19 (a) to (j) are cross-sectional views showing different structural examples of the sealing structure according to the present invention having a composite material layer in which cut fibers are dispersed.

FIGS. 20A to 20J are cross-sectional views showing different examples of the structure for sealing according to the present invention having a layer of a composite material obtained by branching particles and cut fibers.

FIGS. 21 (a) to (r) are cross-sectional views showing different configuration examples of the sealing structure according to the present invention having a composite material layer composed of cloth, mesh and resin.

22 (a) to (h) are cross-sectional views showing another different configuration example of the sealing member according to the present invention having a composite material layer composed of cloth, mesh and resin.

FIG. 23 is a cross-sectional view schematically showing an example of an embodiment of a sealing method according to the present invention in which a bonding resin layer is formed on a semiconductor device side in advance.

24 (a) to (d) are conceptual views for explaining an example of a sealing step according to the present invention.

FIG. 25 is a conceptual diagram for explaining a manufacturing system according to the present invention.

26A to 26R are a perspective view and a cross-sectional view illustrating a configuration example of a sealing member according to the present invention.

FIGS. 27A to 27H are a perspective view and a cross-sectional view illustrating a configuration example of a sealing member according to the present invention.

FIGS. 28 (a) to (l) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

29 (a) to 29 (e) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

30 (a) to (g) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

31 (a) to (g) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

32 (a) to (d) are cross-sectional views showing different examples of the structure of the sealing member according to the present invention.

33 (a) to (g) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

34 (a) to (e) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

35 (a) to (j) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

36 (a) to (e) are cross-sectional views showing different configuration examples of the sealing member according to the present invention.

FIG. 37 is a cross-sectional view illustrating a configuration example of a sealing member according to the present invention.

FIG. 38 is a cross-sectional view illustrating a configuration example of a sealing member according to the present invention.

FIG. 39 is a cross-sectional view illustrating a configuration example of a sealing member according to the present invention.

FIG. 40 is a cross-sectional view showing a configuration example of a sealing member according to the present invention.

FIG. 41 is a cross-sectional view illustrating an example of a method for manufacturing a sealing member according to the present invention.

FIG. 42 is a cross-sectional view illustrating an example of a method for manufacturing a sealing member according to the present invention.

FIG. 43 is a cross-sectional view illustrating an example of a method for manufacturing a sealing member according to the present invention.

FIG. 44 is a cross-sectional view showing a state in which a semiconductor element that has been flip-chip bonded onto a substrate is sealed using the sealing member according to the present invention.

FIGS. 45A to 45D are schematic diagrams illustrating an example of a method for manufacturing a sealing structure according to the present invention.

FIGS. 46A to 46C are schematic diagrams illustrating an example of a method for manufacturing a sealing structure according to the present invention.

FIGS. 47A to 47D are schematic diagrams illustrating an example of a method for manufacturing a sealing structure according to the present invention.

FIGS. 48A to 48F are schematic diagrams illustrating an example of a method for manufacturing a sealing structure according to the present invention.

FIGS. 49 (a) to (f) are schematic views showing an example of a method for manufacturing a sealing structure according to the present invention.

50 (a) to 50 (f) are schematic views showing an example of a method for manufacturing a sealing structure according to the present invention.

FIGS. 51 (a) to 51 (l) are schematic views showing an example of a method for manufacturing a sealing structure according to the present invention.

FIGS. 52A and 52B are perspective views showing a configuration example of a sealing member according to the present invention.

FIG. 53 is a conceptual diagram of a system for manufacturing the sealing member of the present invention.

FIG. 54 is a cross-sectional view illustrating a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 55 is a cross-sectional view illustrating a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 56 is a cross-sectional view showing a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 57 is a cross-sectional view illustrating a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 58 is a cross-sectional view showing a state where a semiconductor element is sealed using the sealing structure of the present invention;

FIG. 59 is a cross-sectional view illustrating a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 60 is a cross-sectional view showing a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 61 is a cross-sectional view showing a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 62 is a cross-sectional view showing a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 63 is a cross-sectional view illustrating a state where a semiconductor element is sealed using the sealing structure of the present invention.

FIG. 64 is a cross-sectional view showing a configuration example of a sealing member according to the present invention.

FIG. 65 is a cross-sectional view showing a configuration example of a sealing member according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Encapsulation structure 2 ... Semiconductor element 3 ... Substrate 4 ... TAB carrier tape 5 ... Carrier 6 ... Frame or cut tape 7 ... Tray 8 ... Wiring 9 ... Bonding wire 10 ... TAB lead 11 ... Bamboo 12 ... Lead frame 13 ... Thermoplastic resin 14 ... Thermosetting resin (cured) 15 ... Thermoplastic resin (lower in heat resistance than 13) 16 ... Thermosetting resin (uncured) 17 ... Adhesive resin layer Reference Signs List 18 barrier layer 19 decorative layer 20 printing film 21 protective film 22 metal layer 23 ceramic layer 24 composite material layer (containing particles) 24a composite material layer (containing fibers) 24b composite material layer (fibers) Particles included) 24c Composite material layer (containing cloth and mesh) 25 Line 26 Sealing process 27 Switching device for various types of semiconductor chips 28 Assembly line before sealing 29 ... Switching device for various kinds of sealing members 30 ... Assembly line after sealing 31 ... Upper layer 32 ... Lower layer 33 ... Intermediate layer 34 ... Shield layer 35 ... Ground electrode 36 ... Bump solder 37, lead 38, package 39, insulating film 40, adhesive film 41, heat spreader 42, roll material film 43, which is a material of a sealing structure 43, roll 44, film cutting machine 45, tape carrier 46, one cut The sealing member 47 which is separated one by one

Claims (2)

(57) [Claims] 1. A semiconductor device mounted on a first carrier and a sealing structure formed on a second carrier and comprising a base provided with a resin layer used for sealing the semiconductor device are lined with each other. A method for manufacturing a semiconductor device, comprising supplying a semiconductor device in a synchronized manner, coating the semiconductor device with the sealing structure, and sealing the semiconductor device by sealing. 2. A method for sealing a semiconductor device by covering a semiconductor device with a sealing structure comprising a substrate having a resin layer prepared for use in sealing the semiconductor device and then sealing the semiconductor device. A method of manufacturing a semiconductor device, wherein the base is provided with a thermoplastic resin layer and a thermosetting resin layer, and the sealing is performed such that the outer surface is a thermoplastic resin layer and the semiconductor device side is a thermosetting resin layer. A method of manufacturing a semiconductor device, comprising disposing a structural member for use.