JP2007287937A - Resin-sealed semiconductor device and its manufacturing method - Google Patents

Resin-sealed semiconductor device and its manufacturing method Download PDF

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JP2007287937A
JP2007287937A JP2006113751A JP2006113751A JP2007287937A JP 2007287937 A JP2007287937 A JP 2007287937A JP 2006113751 A JP2006113751 A JP 2006113751A JP 2006113751 A JP2006113751 A JP 2006113751A JP 2007287937 A JP2007287937 A JP 2007287937A
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resin
semiconductor
electromagnetic wave
wave shielding
semiconductor device
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Akira Yoshizumi
章 善積
Shosaku Ito
正作 井東
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Kyocera Chemical Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device which prevents an electromagnetic failure of several resin-sealed semiconductor devices used in a circumference of a high-frequency facilities and equipment and devices, and to provide its manufacturing method. <P>SOLUTION: The resin-sealed semiconductor device comprises a base substance comprising an interconnection substrate 1, a semiconductor element 2 fixed to the base substance, and a resin 9 for sealing the semiconductor with the semiconductor element sealed. An electromagnetic wave shielding resin unit 6 is formed at least at a part of a peripheral part of the resin for sealing the semiconductor so that the electromagnetic wave to the semiconductor element is blocked in the resin-sealed semiconductor device. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、通信機器周辺での使用に耐え得る樹脂封止型半導体装置及びその製造方法に関し、特に、半導体封止用樹脂の外周部の少なくとも一部に電磁波シールド樹脂部を有する樹脂封止型半導体装置及びその製造方法に関する。   The present invention relates to a resin-encapsulated semiconductor device that can withstand use around a communication device and a method for manufacturing the same, and in particular, a resin-encapsulated mold having an electromagnetic shielding resin portion at least at a part of the outer periphery of a resin for semiconductor encapsulation. The present invention relates to a semiconductor device and a manufacturing method thereof.

情報通信分野における、大量伝送、高速伝送に対する要求は著しく、本要求に応えるためには、動作周波数、キャリア周波数共、高周波化が欠かせない。   The demand for mass transmission and high-speed transmission in the information communication field is significant, and in order to meet this requirement, it is indispensable to increase the frequency for both the operating frequency and the carrier frequency.

一方、高周波化すればするほど、電磁波障害は激しくなる。例えば、各種の通信機器用の制御用半導体装置は、樹脂封止によりデバイス化、パッケージ化されているが、これまでの半導体の封止に用いられていた樹脂のみでは、今後の展開が図られる高周波化には対応できるものではない。   On the other hand, the higher the frequency, the more severe the electromagnetic interference. For example, control semiconductor devices for various types of communication equipment are made into devices and packaged by resin sealing, but future development is only possible with resins that have been used for semiconductor sealing so far. It cannot cope with high frequency.

現在、高周波化への対策として、金属被覆による電磁障害防止、電磁障害を受けにくい素子設計等が実施されている（例えば、特許文献１乃至３参照）。
特開２００１−６０６４２号公報 特開２００２−１３４６７９号公報 特開２００２−３６３３８３号公報 Currently, as countermeasures against higher frequencies, prevention of electromagnetic interference by metal coating, element design that is less susceptible to electromagnetic interference, and the like are being implemented (see, for example, Patent Documents 1 to 3).
JP 2001-60642 A JP 2002-134679 A JP 2002-363383 A

しかしながら、上記したような金属被覆や素子設計により得られた樹脂封止型半導体装置の場合でも、外的有害電波による誤動作を防ぐために十分な対応ができているとはいえない。   However, even in the case of a resin-encapsulated semiconductor device obtained by metal coating or element design as described above, it cannot be said that sufficient measures can be taken to prevent malfunction due to external harmful radio waves.

そこで、本発明は、特に高周波設備、機器、デバイス、の周辺で用いられる各種の樹脂封止された半導体デバイスの電磁障害を防止する樹脂封止型半導体装置であり、かつ、従来は複数回の成形が必要であったのに対して一回の成形で容易に電磁波シールド機能を有する樹脂封止型半導体装置が得られる製造方法を提供しようとするものである。   Therefore, the present invention is a resin-encapsulated semiconductor device for preventing electromagnetic interference of various resin-encapsulated semiconductor devices used particularly in the vicinity of high-frequency equipment, equipment, and devices. An object of the present invention is to provide a manufacturing method in which a resin-encapsulated semiconductor device having an electromagnetic wave shielding function can be easily obtained by a single molding, although the molding is necessary.

本発明の樹脂封止型半導体装置は、配線基板又はリードフレームからなる基体と、基体に固定された半導体素子と、半導体素子を封止してなる半導体封止用樹脂と、からなる樹脂封止型半導体装置であって、半導体封止用樹脂の外周部の一部又は全面に、半導体素子への電磁波を遮断するように電磁波シールド樹脂部が形成されていることを特徴とするものである。   The resin-encapsulated semiconductor device of the present invention is a resin-encapsulated assembly comprising a substrate made of a wiring board or a lead frame, a semiconductor element fixed to the substrate, and a semiconductor-encapsulating resin encapsulating the semiconductor element. In this type of semiconductor device, an electromagnetic wave shielding resin portion is formed on a part or the whole of the outer peripheral portion of the semiconductor sealing resin so as to block electromagnetic waves to the semiconductor element.

この樹脂封止型半導体装置は、半導体素子への電磁波を遮断するように電磁波シールド樹脂部が形成されていることを特徴とするものであって、この電磁波シールド樹脂部は半導体素子への電磁波を十分に遮断することができるように、電磁波シールド樹脂部と基体とが、半導体素子を挟んで配置されており、半導体素子に半導体封止用樹脂を介して接合されていることが好ましい。   This resin-encapsulated semiconductor device is characterized in that an electromagnetic wave shielding resin part is formed so as to block electromagnetic waves to the semiconductor element, and the electromagnetic wave shielding resin part transmits electromagnetic waves to the semiconductor element. It is preferable that the electromagnetic wave shielding resin portion and the substrate are disposed with the semiconductor element interposed therebetween so that the semiconductor element can be sufficiently blocked, and is bonded to the semiconductor element via a semiconductor sealing resin.

また、本発明の樹脂封止型半導体装置の製造方法は、配線基板又はリードフレームからなる基体に固定された半導体素子を、半導体封止用樹脂により封止する樹脂封止型半導体装置の製造方法であって、半導体封止用樹脂を成形すると同時に、担体フィルム表面又は金型内面に形成されたＢ−ステージ状態の電磁波シールド樹脂部を、半導体封止用樹脂の外周部に転写硬化させ、電磁波シールド樹脂部を形成して封止することを特徴とするものである。転写したフィルムは剥がしてもよいし、剥がさずにそのまま一体化してもよい。   Also, the method for manufacturing a resin-encapsulated semiconductor device of the present invention is a method for manufacturing a resin-encapsulated semiconductor device in which a semiconductor element fixed to a substrate made of a wiring board or a lead frame is encapsulated with a resin for encapsulating a semiconductor. The semiconductor sealing resin is molded, and at the same time, the B-stage electromagnetic shielding resin part formed on the surface of the carrier film or the inner surface of the mold is transferred and cured on the outer peripheral part of the semiconductor sealing resin, and the electromagnetic wave A shield resin portion is formed and sealed. The transferred film may be peeled off or may be integrated as it is without being peeled off.

さらに、本発明の別の樹脂封止型半導体装置の製造方法は、配線基板又はリードフレームからなる基体に固定された半導体素子を、２層以上の半導体封止用樹脂シートにより封止する樹脂封止型半導体装置の製造方法であって、半導体封止用樹脂シートとして、少なくとも１層の電磁波シールド樹脂部を有する半導体封止用樹脂シートを用い、このシートを基体に固定された半導体素子の上に積層して、圧縮成形することにより封止することを特徴とするものである。   Furthermore, another method for manufacturing a resin-encapsulated semiconductor device according to the present invention is a resin encapsulating method in which a semiconductor element fixed to a substrate composed of a wiring substrate or a lead frame is encapsulated with two or more layers of a semiconductor encapsulating resin sheet. A method for manufacturing a stationary semiconductor device, wherein a semiconductor sealing resin sheet having at least one electromagnetic wave shielding resin portion is used as a semiconductor sealing resin sheet, and the semiconductor element is fixed on a substrate. And sealed by compression molding.

半導体素子を樹脂封止する方法として、片面封止法と両面封止法があり、片面封止方法により得られる半導体装置としては、例えば、ＢＧＡ（ボールグリッドアレイパッケージタイプ）等が挙げられ、両面封止法により得られる半導体装置としては、例えば、ＱＦＰ（クオードフラットタイプパッケージ）等が挙げられる。本発明においては、どちらの封止法も用いることができる。   As a method for resin-sealing a semiconductor element, there are a single-side sealing method and a double-side sealing method. Examples of the semiconductor device obtained by the single-side sealing method include BGA (ball grid array package type). Examples of the semiconductor device obtained by the sealing method include QFP (quad flat type package). In the present invention, either sealing method can be used.

本発明の樹脂封止型半導体装置によれば、半導体素子への電磁波を遮断するように電磁波シールド樹脂部を形成しているので、高周波回路等の近くで使用しても、内装された半導体素子、半導体部品、モジュール等への高周波による外乱を防止する事が出来、安定して動作させることができる。   According to the resin-encapsulated semiconductor device of the present invention, the electromagnetic wave shielding resin portion is formed so as to block the electromagnetic wave to the semiconductor element. In addition, it is possible to prevent disturbance due to high frequency to semiconductor parts, modules, etc., and to operate stably.

また、本発明の樹脂封止型半導体装置の製造方法によれば、一回の成形で電磁波シールド機能を有する樹脂封止型半導体装置を製造することができる。工程が短縮されるため不良品の発生の減少、製造コストの低減など、生産性が向上し、簡便に、安定して製造することができる。また、電磁波シールド樹脂部に使用する樹脂及びその形成方法の自由度が高く、昨今要求が高くなっている薄型の樹脂封止型半導体装置にも容易に対応できる。   Moreover, according to the manufacturing method of the resin-encapsulated semiconductor device of the present invention, a resin-encapsulated semiconductor device having an electromagnetic wave shielding function can be manufactured by a single molding. Since the process is shortened, productivity is improved, such as a reduction in the generation of defective products and a reduction in manufacturing cost. In addition, the resin used for the electromagnetic wave shielding resin portion and the method of forming the resin are highly flexible, and it can be easily applied to a thin resin-encapsulated semiconductor device which has recently been demanded.

以下、本発明について、実施形態を参照しながら詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to embodiments.

（第１の実施形態）
図１は、本発明の樹脂封止型半導体装置を製造する場合の樹脂封止の操作を時系列に示したものである。ここでは、片面封止法によるＢＧＡの製造を例とし、移送成形（トランスファー成形）による封止について示し、図１において、（ａ）は樹脂封止前、（ｂ）は樹脂封止中、（ｃ）は樹脂封止後の半導体装置の断面と周辺部材の断面図を示したものである。なお、上下の金型と担体フィルムとは便宜上、空間を空けて示し、これは以下の実施形態の説明においても同様である。 (First embodiment)
FIG. 1 shows, in time series, the resin sealing operations when manufacturing the resin-encapsulated semiconductor device of the present invention. Here, the production of BGA by the single-side sealing method is taken as an example, and sealing by transfer molding (transfer molding) is shown. In FIG. 1, (a) is before resin sealing, (b) is during resin sealing, c) shows a cross section of the semiconductor device after resin sealing and a cross sectional view of peripheral members. The upper and lower molds and the carrier film are shown with a space for convenience, and this is the same in the description of the following embodiments.

配線基板１に搭載された半導体素子２に、信号接続のためにボンディングワイヤー３が配線基板１から伸びて接続されている。この配線基板１の下には、移送成形用の下金型４があり、上方には移送成形用の上金型５があり、また、上金型５と配線基板１との間には、所定の部分に、硬化前（Ｂ−ステージ）の電磁波シールド用樹脂６を塗布した担体フィルム７がある。   A bonding wire 3 extends from the wiring board 1 and is connected to the semiconductor element 2 mounted on the wiring board 1 for signal connection. Below this wiring board 1, there is a lower mold 4 for transfer molding, above it is an upper mold 5 for transfer molding, and between the upper mold 5 and the wiring board 1, There is a carrier film 7 coated with an electromagnetic shielding resin 6 before curing (B-stage) at a predetermined portion.

樹脂封止前の状況では、金型４，５は、硬化に必要な温度まで加熱されており、担体フィルム７は、減圧口により上金型５に固定されている（図１（ａ））。上下の金型を締めて固定し、次に、ゲート口８から予備加熱された半導体封止用樹脂９を半導体素子部に注入し（図１（ｂ））、エアベント部１０にまで到達したら、半導体封止用樹脂９を加熱硬化して成形すると同時に、担体フィルム表面に形成されたＢ−ステージ状態の電磁波シールド用樹脂６を半導体封止用樹脂の外周部に転写し、かつ硬化させる。金型４，５を外し、配線基板１の裏側に金属ボールを接続し、個々のパッケージを図に示した切断線１１でカットして電磁波シールド樹脂部を有するＢＧＡパッケージを製造することができる（図１（ｃ））。   In the situation before resin sealing, the molds 4 and 5 are heated to a temperature necessary for curing, and the carrier film 7 is fixed to the upper mold 5 by a decompression port (FIG. 1A). . The upper and lower molds are fastened and fixed, and then the semiconductor sealing resin 9 preheated from the gate port 8 is injected into the semiconductor element portion (FIG. 1B) and reaches the air vent portion 10, The semiconductor sealing resin 9 is heat-cured and molded, and at the same time, the B-stage electromagnetic shielding resin 6 formed on the surface of the carrier film is transferred to the outer periphery of the semiconductor sealing resin and cured. The BGA package having the electromagnetic wave shielding resin portion can be manufactured by removing the dies 4 and 5, connecting metal balls to the back side of the wiring board 1, and cutting the individual packages along the cutting line 11 shown in the drawing ( FIG. 1 (c)).

本実施形態で用いる材料は、通常、半導体を製造する際に用いられるものを何ら限定することなく使用することができる。   The material used in the present embodiment can be used without any limitation usually used for manufacturing a semiconductor.

そして、ここで用いる電磁波シールド用樹脂としては、鉄、アルミニウム、銅、ニッケル、銀、金等の金属材料、カーボン繊維からなるカーボン材料及びフェライト材料から選ばれる少なくとも１種の材料を配合したものが挙げられ、これらを任意に混合して用いることもできるが、特に、金属材料にカーボン材料又はフェライト材料を混合して含有する樹脂であることが好ましい。   And as resin for electromagnetic wave shielding used here, what mix | blended at least 1 sort (s) of material chosen from metal materials, such as iron, aluminum, copper, nickel, silver, gold | metal | money, the carbon material which consists of carbon fiber, and a ferrite material. These can be arbitrarily mixed and used, but a resin containing a carbon material or a ferrite material mixed with a metal material is particularly preferable.

また、金属材料としては、平均粒径０．１〜１００μｍの金属粒子であることが好ましく、カーボン材料としては、黒鉛、カーボン、活性炭、カーボンファイバー、コークス、有機前駆体を不活性雰囲気中で熱処理して合成した炭素、ナノカーボン球状体、ナノカーボンチューブ、ナノカーボンファイバー等の粉末であることが好ましく、さらに、フェライト材料としては、平均粒径０．１〜１００μｍの粒子であることが好ましい。これらは、それぞれシールド効果の大きさ、対象周波数等の目的に応じて適宜選択して用いることができる。   The metal material is preferably metal particles having an average particle diameter of 0.1 to 100 μm, and the carbon material is graphite, carbon, activated carbon, carbon fiber, coke, and an organic precursor heat-treated in an inert atmosphere. The powder is preferably a powder of carbon, nanocarbon spheres, nanocarbon tubes, nanocarbon fibers, or the like synthesized as described above, and the ferrite material is preferably particles having an average particle diameter of 0.1 to 100 μm. These can be appropriately selected and used according to purposes such as the magnitude of the shielding effect and the target frequency.

ここで用いるベース樹脂としては、Ｂ−ステージ化の可能な熱硬化性樹脂であることが好ましく、例えば、ポリイミド樹脂、マレイミド樹脂、メラミン樹脂、尿素樹脂、ポリアミド樹脂、フェノール樹脂、エポキシ樹脂等が挙げられ、その中でもエポキシ樹脂であることが好ましい。エポキシ樹脂としては、一般に用いられている半導体封止用エポキシ樹脂を用いることができ、アミン硬化のエポキシ樹脂、酸無水物硬化のエポキシ樹脂、ノボラックフェノール硬化のエポキシ樹脂であることが好ましく、さらには、京セラケミカル株式会社製のＫＥ−シリーズの組成からなるものであることが特に好ましい。   The base resin used here is preferably a thermosetting resin that can be B-staged, and examples thereof include a polyimide resin, a maleimide resin, a melamine resin, a urea resin, a polyamide resin, a phenol resin, and an epoxy resin. Of these, epoxy resins are preferred. As the epoxy resin, a commonly used epoxy resin for semiconductor encapsulation can be used, and it is preferably an amine-cured epoxy resin, an acid anhydride-cured epoxy resin, or a novolak phenol-cured epoxy resin. It is particularly preferable that the composition is composed of a KE-series composition manufactured by Kyocera Chemical Co., Ltd.

このようなベース樹脂、例えばＫＥ−シリーズ等の半導体封止用樹脂を、アセトン等の溶媒に溶かして、金属材料、カーボン材料、フェライト材料等からなる電磁波シールド用添加剤を練り込み、適当な粘度になるまで溶媒を気散させてペーストとし、担体フィルムに塗布して、さらに溶媒を気散させて乾かし、Ｂ−ステージ状態の樹脂とすることができる。   Such a base resin, for example, a semiconductor sealing resin such as KE-series, is dissolved in a solvent such as acetone, and an electromagnetic shielding additive made of a metal material, a carbon material, a ferrite material, or the like is kneaded, and an appropriate viscosity is obtained. It is possible to obtain a B-stage resin by dispersing the solvent until it becomes a paste, applying the paste to a carrier film, and further drying the solvent by dispersing the solvent.

これらのベース樹脂と金属材料、カーボン材料及びフェライト材料との混合割合は、ベース樹脂が５〜９５％、金属材料、カーボン材料及びフェライト材料からなる電磁波シールド用添加材が９５〜５％として電磁波シールド用樹脂とすることが好ましい。この割合は、シールド効果の大きさ、対象周波数等の目的に応じて適宜選択することができる。また、この電磁波シールド用樹脂には、水溶性溶剤やアルコール、防腐剤、紫外線吸収剤、老化防止剤、充填材、粘度調整剤、垂れ止め剤等の添加剤を適宜配合することができる。   The mixing ratio of the base resin to the metal material, the carbon material and the ferrite material is 5 to 95% for the base resin, and 95 to 5% for the electromagnetic wave shielding additive made of the metal material, the carbon material and the ferrite material. It is preferable to use a resin. This ratio can be appropriately selected according to the purpose of the shielding effect, the target frequency, and the like. In addition, additives such as water-soluble solvents, alcohols, preservatives, ultraviolet absorbers, anti-aging agents, fillers, viscosity modifiers, and sag-preventing agents can be appropriately added to the electromagnetic wave shielding resin.

このような電磁波シールド用樹脂を、例えば、担体フィルム等に塗布して電磁波シールド樹脂の膜を形成し、これを、例えば、日泉化学株式会社の一体成形方式等のフィルム転写成形（Ｆｉｌｍ Ｔｒａｎｓｆｅｒ）により、金型内に成形することができる。担体フィルムとしては、ポリエチレンテレフタレート、ポリエステル、ポリカーボネート、ポリイミド、ポリフェニレンサルファイド、ポリエーテルサルホン、ポリエチレンナフタレート、ポリエチレン、ポリプロピレン、フッ素、アクリル、ナイロン（ポリアミド）、塩化ビニール等の素材からなるフィルムが挙げられる。また、担体フィルムを使用せず、金型内面に電磁波シールド用樹脂を直接塗膜形成した後、転写するようにしてもよい。   Such an electromagnetic shielding resin is applied to, for example, a carrier film or the like to form an electromagnetic shielding resin film, and this is formed into a film transfer molding (Film Transfer) such as an integral molding method of Niizumi Chemical Co., Ltd. Thus, it can be molded into a mold. Examples of the carrier film include films made of materials such as polyethylene terephthalate, polyester, polycarbonate, polyimide, polyphenylene sulfide, polyethersulfone, polyethylene naphthalate, polyethylene, polypropylene, fluorine, acrylic, nylon (polyamide), and vinyl chloride. . Further, without using a carrier film, an electromagnetic wave shielding resin may be directly formed on the inner surface of the mold and then transferred.

そして、電磁波シールド用樹脂を転写、硬化させて形成された電磁波シールド樹脂部は、半導体素子への外部の電磁波ならびに内部からの電磁波を遮断して、悪影響を及ぼさないようにするように形成されており、例えば、基体上に固定された半導体素子を、基体と挟んで配置されており、かつ、半導体封止用樹脂を介して半導体素子とは接触しないように形成されている。この電磁波シールド樹脂部の大きさは、半導体素子よりも平面寸法が１０〜５０％大きいものであることが好ましく、半導体封止用樹脂の外周部の全面を覆うようにしていてもよく、また、その厚さは５〜３０μｍであることが好ましい。   The electromagnetic wave shielding resin portion formed by transferring and curing the electromagnetic wave shielding resin is formed so as to block external electromagnetic waves to the semiconductor element and internal electromagnetic waves so as not to have an adverse effect. For example, the semiconductor element fixed on the base is disposed between the base and the semiconductor element so as not to contact the semiconductor element via the semiconductor sealing resin. The size of the electromagnetic shielding resin part is preferably 10 to 50% larger than the semiconductor element in the planar dimension, and may cover the entire outer peripheral part of the semiconductor sealing resin, The thickness is preferably 5 to 30 μm.

そして、ここで用いる半導体封止用樹脂としては、従来から半導体封止に用いられている樹脂であれば特に限定されるものではないが、エポキシ樹脂、ジアリルフタレート樹脂、シリコーン樹脂、ポリイミド樹脂等の成形材料であることが好ましく、特に、エポキシ樹脂としたときには、京セラケミカル株式会社のＫＥシリーズを好適に用いる事ができる。   The semiconductor sealing resin used here is not particularly limited as long as it is a resin conventionally used for semiconductor sealing, such as epoxy resin, diallyl phthalate resin, silicone resin, polyimide resin, etc. A molding material is preferable, and in particular, when an epoxy resin is used, the KE series of Kyocera Chemical Co., Ltd. can be suitably used.

（第２の実施形態）
図２は、本発明の樹脂封止型半導体装置を製造する場合の樹脂封止の操作を時系列に示したものである。ここでは、両面封止法によるＱＦＰの製造を例として示し、図２において、（ａ）は樹脂封止前、（ｂ）は樹脂封止中、（ｃ）は樹脂封止後の半導体装置の断面と周辺部材の断面図を示したものである。なお、この実施形態で使用する材料等は、第１の実施形態と同じである。 (Second Embodiment)
FIG. 2 shows, in time series, the resin sealing operation when manufacturing the resin-encapsulated semiconductor device of the present invention. Here, manufacturing of QFP by a double-sided sealing method is shown as an example. In FIG. 2, (a) is before resin sealing, (b) is during resin sealing, and (c) is a semiconductor device after resin sealing. The cross section and sectional drawing of a peripheral member are shown. The materials used in this embodiment are the same as those in the first embodiment.

リードフレーム２１に搭載された半導体素子２２に、信号接続のためにボンディングワイヤー２３がリードフレーム端から伸びて接続されている。このリードフレーム２１の下には、移送成形用の下金型２４があり、上方には移送成形用の上金型２５があり、また、上金型２５とリードフレーム２１との間には、所定の部分に、硬化前（Ｂ−ステージ）の電磁波シールド用樹脂２６を塗布した担体フィルム２７がある。また、下金型２４とリードフレーム２１との間には、担体フィルム２８がある。   A bonding wire 23 extends from the end of the lead frame and is connected to the semiconductor element 22 mounted on the lead frame 21 for signal connection. Below this lead frame 21, there is a lower mold 24 for transfer molding, above which there is an upper mold 25 for transfer molding, and between the upper mold 25 and the lead frame 21, There is a carrier film 27 coated with an electromagnetic shielding resin 26 before curing (B-stage) at a predetermined portion. There is a carrier film 28 between the lower mold 24 and the lead frame 21.

樹脂封止前の状況では、金型２４，２５は、硬化に必要な温度まで加熱されており、担体フィルム２７，２８は、減圧口により上金型と下金型にそれぞれ固定されている（図２（ａ））。上下の金型２４，２５を締めて固定し、次に、ゲート口２９から予備加熱された封止用樹脂３０を半導体素子部に注入し（図２（ｂ））、エアベント部３１にまで到達したら、半導体封止用樹脂３０を加熱硬化して成形すると同時に、担体フィルム表面に形成されたＢ−ステージ状態の電磁波シールド用樹脂２６を転写し、かつ硬化させる。金型２４，２５を外し、図に示したようにゲート部のバリ３２とエアベント部のバリ３３とを取り、リードフレームをカットして端子成形してＱＦＰを製造することができる（図２（ｃ））。   In the situation before resin sealing, the molds 24 and 25 are heated to a temperature necessary for curing, and the carrier films 27 and 28 are fixed to the upper mold and the lower mold by the decompression port, respectively ( FIG. 2 (a)). The upper and lower molds 24 and 25 are fastened and fixed, and then the preheated sealing resin 30 is injected into the semiconductor element portion from the gate port 29 (FIG. 2B) and reaches the air vent portion 31. Then, the semiconductor sealing resin 30 is heat-cured and molded, and at the same time, the B-stage electromagnetic wave shielding resin 26 formed on the surface of the carrier film is transferred and cured. The molds 24 and 25 are removed, and as shown in the figure, the burr 32 of the gate portion and the burr 33 of the air vent portion are removed, the lead frame is cut, and the terminal is molded to manufacture the QFP (FIG. 2 ( c)).

（第３の実施形態）
図３は、本発明の樹脂封止型半導体装置を製造する場合の樹脂封止の操作を時系列に示したものである。ここでは、片面封止によるＢＧＡの製造を例とし、第１の実施形態とは異なり、圧縮成形による封止について示した。図３において、（ａ）は樹脂封止前、（ｂ）は樹脂封止中、（ｃ）は樹脂封止後の半導体装置の断面と周辺部材の断面図を示したものである。なお、この実施形態で使用する材料等は、第１の実施形態と同じである。 (Third embodiment)
FIG. 3 shows, in time series, the resin sealing operation when manufacturing the resin-encapsulated semiconductor device of the present invention. Here, the manufacture of BGA by single-sided sealing is taken as an example, and unlike the first embodiment, sealing by compression molding is shown. In FIG. 3, (a) is before resin sealing, (b) is during resin sealing, and (c) is a cross-sectional view of the semiconductor device and the peripheral members after resin sealing. The materials used in this embodiment are the same as those in the first embodiment.

配線基板４１に搭載された半導体素子４２に、信号接続のためにボンディングワイヤー４３が配線基板４１から伸びて接続されている。この配線基板４１の下には、圧縮成形用の下金型４４があり、上方には圧縮成形用の上金型４５があり、また、上金型４５と配線基板４１との間には、所定の部分に、硬化前（Ｂ−ステージ状態）の電磁波シールド樹脂部４６が形成された半導体封止用樹脂シート４７とフィルム４８がある。   A bonding wire 43 extends from the wiring board 41 and is connected to the semiconductor element 42 mounted on the wiring board 41 for signal connection. Below the wiring board 41 is a lower mold 44 for compression molding, above which is an upper mold 45 for compression molding, and between the upper mold 45 and the wiring board 41, In a predetermined portion, there are a semiconductor sealing resin sheet 47 and a film 48 on which an electromagnetic wave shielding resin portion 46 before curing (B-stage state) is formed.

樹脂封止前の状況では、上下金型４４，４５は、硬化に必要な温度まで加熱されており、半導体封止用樹脂シート４７は、配線基板４１及び半導体素子４２の上に積層された状態で成形前に予備加熱されている（図３（ａ））。半導体封止用樹脂シート４７が、十分に加熱され溶融したら、上金型４５が下降させて金型を締め、半導体素子４２を、半導体封止用樹脂を加熱硬化させると同時に電磁波シールド樹脂部４６も加熱硬化させることで樹脂封止する（図３（ｂ））。金型４４，４５を外し、配線基板４１に金属ボールを接続し、個々のパッケージを図に示した切断線４９でカットしてＢＧＡパッケージを製造することができる（図３（ｃ））。   In the situation before resin sealing, the upper and lower molds 44 and 45 are heated to a temperature necessary for curing, and the semiconductor sealing resin sheet 47 is laminated on the wiring substrate 41 and the semiconductor element 42. Is preheated before molding (FIG. 3A). When the semiconductor sealing resin sheet 47 is sufficiently heated and melted, the upper mold 45 is lowered to tighten the mold, and the semiconductor element 42 is heated and cured with the semiconductor sealing resin, and at the same time, the electromagnetic wave shielding resin portion 46. Is also heat-cured and resin-sealed (FIG. 3B). The BGA package can be manufactured by removing the dies 44 and 45, connecting metal balls to the wiring board 41, and cutting the individual packages at the cutting line 49 shown in the figure (FIG. 3C).

なお、半導体封止用樹脂シート４７は、図示したように、電磁波シールド用樹脂部を半導体封止用樹脂の外周部の一部に形成されるようにしたものであればよく、これを全面に形成してもよい。また、この他に、半導体封止用樹脂からなるシートと電磁波シールド樹脂からなるシートを複数枚組み合わせて積層した多層樹脂シートとして形成することができ、電磁波シールド層と半導体封止用樹脂層をそれぞれ含んでいれば何層でも構わない。多層樹脂シートとして構成されるシートの究極は、片表面が電磁波シールド機能を持ち、もう一方の面が絶縁機能を持つ傾斜機能材料である。また、フィルム４８は、第１の実施形態の担体フィルムと同じものである。   As shown in the figure, the semiconductor sealing resin sheet 47 may be one in which the electromagnetic shielding resin portion is formed on a part of the outer peripheral portion of the semiconductor sealing resin. It may be formed. In addition to this, it can be formed as a multilayer resin sheet obtained by combining and laminating a plurality of sheets made of semiconductor sealing resin and electromagnetic shielding resin sheets, and each of the electromagnetic shielding layer and the semiconductor sealing resin layer. It does not matter how many layers it contains. The ultimate of a sheet constituted as a multilayer resin sheet is a functionally gradient material in which one surface has an electromagnetic wave shielding function and the other surface has an insulating function. The film 48 is the same as the carrier film of the first embodiment.

（第４の実施形態）
図４は、本発明の樹脂封止型半導体装置を製造する場合の樹脂封止の操作を時系列に示したものである。ここでは、第１の実施形態と同様に片面封止法によるＢＧＡの製造を例とし、移送成形（トランスファー成形）による封止について示し、図１において、（ａ）は樹脂封止前、（ｂ）は樹脂封止中、（ｃ）は樹脂封止後の半導体装置の断面と周辺部材の断面図を示したものである。 (Fourth embodiment)
FIG. 4 shows, in time series, the resin sealing operation when manufacturing the resin-encapsulated semiconductor device of the present invention. Here, as in the first embodiment, the production of BGA by the single-side sealing method is taken as an example, and sealing by transfer molding (transfer molding) is shown. In FIG. 1, (a) is before resin sealing, (b ) Is during resin sealing, and (c) is a cross-sectional view of a semiconductor device and a peripheral member after resin sealing.

この第４の実施形態は、電磁波シールド樹脂５１が担体フィルム７の全面に形成されている点及び下金型４にも電磁波シールド樹脂５２が担体フィルム５３の全面に形成されて設けられている点が異なるだけで、その他の構成、操作は第１の実施形態と同様である。   In this fourth embodiment, the electromagnetic wave shielding resin 51 is formed on the entire surface of the carrier film 7 and the lower mold 4 is also provided with the electromagnetic wave shielding resin 52 formed on the entire surface of the carrier film 53. The other configurations and operations are the same as those of the first embodiment, except for the difference.

したがって、最終的に切断線５４でカットされて製造されるＢＧＡは上下面が電磁波シールド樹脂で覆われたものとなり、この実施形態によれば、電磁波の遮蔽効果が極めて優れた樹脂封止型半導体装置を製造することができる。   Therefore, the BGA finally produced by cutting along the cutting line 54 is one whose upper and lower surfaces are covered with an electromagnetic wave shielding resin. According to this embodiment, the resin-encapsulated semiconductor having an extremely excellent electromagnetic wave shielding effect The device can be manufactured.

第１の実施形態に係る樹脂封止型半導体装置の製造操作を示した図である。It is the figure which showed manufacturing operation of the resin sealing type semiconductor device which concerns on 1st Embodiment. 第２の実施形態に係る樹脂封止型半導体装置の製造操作を示した図である。It is the figure which showed manufacturing operation of the resin-encapsulated semiconductor device which concerns on 2nd Embodiment. 第３の実施形態に係る樹脂封止型半導体装置の製造操作を示した図である。It is the figure which showed manufacturing operation of the resin-encapsulated semiconductor device which concerns on 3rd Embodiment. 第４の実施形態に係る樹脂封止型半導体装置の製造操作を示した図である。It is the figure which showed manufacturing operation of the resin sealing type semiconductor device which concerns on 4th Embodiment.

符号の説明Explanation of symbols

１…配線基板、２…半導体素子、３… ボンディングワイヤー、４…下金型、５…上金型、６…電磁波シールド用樹脂、７…担体フィルム、８…ゲート口、９…半導体封止用樹脂、１０…エアベント部、１１…切断線、２１…リードフレーム、２２…半導体素子、２３…ボンディングワイヤー、２４…下金型、２５…上金型、２６…電磁波シールド用樹脂、２７，２８…担体フィルム、２９…ゲート口、３０…半導体封止用樹脂、３１…エアベント部、３２，３３…バリ、４１…配線基板、４２…半導体素子、４３…ボンディングワイヤー、４４…下金型、４５…上金型、４６…電磁波シールド樹脂部、４７…半導体封止用樹脂シート、４８…フィルム、４９…切断線、５１，５２…電磁波シールド樹脂、５３…担体フィルム、５４…切断線   DESCRIPTION OF SYMBOLS 1 ... Wiring board, 2 ... Semiconductor element, 3 ... Bonding wire, 4 ... Lower metal mold, 5 ... Upper metal mold, 6 ... Resin for electromagnetic wave shielding, 7 ... Carrier film, 8 ... Gate opening, 9 ... For semiconductor sealing Resin, 10 ... Air vent part, 11 ... Cutting line, 21 ... Lead frame, 22 ... Semiconductor element, 23 ... Bonding wire, 24 ... Lower mold, 25 ... Upper mold, 26 ... Resin for electromagnetic wave shield, 27, 28 ... Carrier film, 29 ... Gate port, 30 ... Semiconductor sealing resin, 31 ... Air vent part, 32,33 ... Burr, 41 ... Wiring substrate, 42 ... Semiconductor element, 43 ... Bonding wire, 44 ... Lower mold, 45 ... Upper mold, 46 ... electromagnetic shielding resin part, 47 ... semiconductor sealing resin sheet, 48 ... film, 49 ... cutting line, 51, 52 ... electromagnetic shielding resin, 53 ... carrier film, 54 ... cutting line

Claims (8)

配線基板又はリードフレームからなる基体と、前記基体に固定された半導体素子と、前記半導体素子を封止してなる半導体封止用樹脂と、からなる樹脂封止型半導体装置であって、
前記半導体封止用樹脂の外周部の一部又は全面に、前記半導体素子への電磁波シールド樹脂部が形成されていることを特徴とする樹脂封止型半導体装置。 A resin-encapsulated semiconductor device comprising a substrate made of a wiring board or a lead frame, a semiconductor element fixed to the substrate, and a semiconductor sealing resin for sealing the semiconductor element,
An electromagnetic wave shielding resin portion for the semiconductor element is formed on a part or the whole of the outer peripheral portion of the semiconductor sealing resin. 前記電磁波シールド樹脂部と前記基体とが、前記半導体素子を挟んで配置されており、前記電磁波シールド樹脂部は、前記半導体素子に前記半導体封止用樹脂を介して接合されていることを特徴とする請求項１記載の樹脂封止型半導体装置。   The electromagnetic wave shielding resin part and the base are disposed with the semiconductor element interposed therebetween, and the electromagnetic wave shielding resin part is bonded to the semiconductor element via the semiconductor sealing resin. The resin-encapsulated semiconductor device according to claim 1. 前記電磁波シールド樹脂部を形成する電磁波シールド用樹脂が、ベース樹脂に、金属材料、カーボン材料及びフェライト材料から選ばれる少なくとも１つ以上の電磁波シールド用添加材を含有することを特徴とする請求項１又は２記載の樹脂封止型半導体装置。   The electromagnetic wave shielding resin that forms the electromagnetic wave shielding resin portion contains at least one electromagnetic wave shielding additive selected from a metal material, a carbon material, and a ferrite material in a base resin. Or the resin-sealed semiconductor device of 2. 前記電磁波シールド樹脂部を形成する電磁波シールド用樹脂が、カーボン繊維と金属粒子を含有するものであって、前記半導体封止用樹脂が、エポキシ樹脂である事を特徴とする請求項１乃至３のいずれか１項記載の樹脂封止型半導体装置。   The electromagnetic wave shielding resin that forms the electromagnetic wave shielding resin part contains carbon fibers and metal particles, and the semiconductor sealing resin is an epoxy resin. A resin-encapsulated semiconductor device according to any one of the preceding claims. 配線基板又はリードフレームからなる基体に固定された半導体素子を、半導体封止用樹脂により封止する樹脂封止型半導体装置の製造方法であって、
前記半導体封止用樹脂を成形すると同時に、担体フィルム表面又は金型内面に形成されたＢ−ステージ状態の電磁波シールド樹脂部を、前記半導体封止用樹脂の外周部に転写硬化させ、電磁波シールド樹脂部を形成して封止することを特徴とする樹脂封止型半導体装置の製造方法。 A method for manufacturing a resin-encapsulated semiconductor device in which a semiconductor element fixed to a substrate made of a wiring board or a lead frame is sealed with a resin for semiconductor encapsulation,
At the same time as molding the semiconductor sealing resin, the B-stage electromagnetic shielding resin portion formed on the surface of the carrier film or the inner surface of the mold is transferred and cured to the outer peripheral portion of the semiconductor sealing resin, and the electromagnetic shielding resin A method for manufacturing a resin-encapsulated semiconductor device, wherein a portion is formed and sealed. 配線基板又はリードフレームからなる基体に固定された半導体素子を、２層以上の半導体封止用樹脂シートにより封止する樹脂封止型半導体装置の製造方法であって、
前記半導体封止用樹脂シートとして、少なくとも１層のＢ−ステージ状態の電磁波シールド樹脂部を有する半導体封止用樹脂シートを用い、このシートを基体に固定された半導体素子の上に積層し、圧縮成形して封止することを特徴とする樹脂封止型半導体装置の製造方法。 A method of manufacturing a resin-encapsulated semiconductor device in which a semiconductor element fixed to a substrate consisting of a wiring board or a lead frame is encapsulated with two or more layers of a semiconductor encapsulating resin sheet,
As the semiconductor sealing resin sheet, a semiconductor sealing resin sheet having at least one B-stage electromagnetic shielding resin portion is used, and this sheet is laminated on a semiconductor element fixed to a base and compressed. A method for manufacturing a resin-encapsulated semiconductor device, which is molded and sealed. 前記電磁波シールド樹脂部を形成する電磁波シールド用樹脂が、ベース樹脂に、金属材料、カーボン材料及びフェライト材料から選ばれる少なくとも１つ以上の電磁波シールド用添加材を含有することを特徴とする請求項５又は６記載の樹脂封止型半導体装置の製造方法。   6. The electromagnetic wave shielding resin forming the electromagnetic wave shielding resin part contains at least one electromagnetic wave shielding additive selected from a metal material, a carbon material, and a ferrite material in a base resin. Or the manufacturing method of the resin-sealed semiconductor device of 6. 前記電磁波シールド樹脂部を形成する電磁波シールド用樹脂が、カーボン繊維と金属粒子を含有するものであって、前記半導体封止用樹脂が、エポキシ樹脂である事を特徴とする請求項５乃至７のいずれか１項記載の樹脂封止型半導体装置の製造方法。   8. The electromagnetic wave shielding resin that forms the electromagnetic wave shielding resin portion contains carbon fibers and metal particles, and the semiconductor sealing resin is an epoxy resin. A method for manufacturing a resin-encapsulated semiconductor device according to claim 1.
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