JP2019046947A - Method for manufacturing film for electromagnetic wave shield - Google Patents

Abstract

To provide a method for manufacturing a film for electromagnetic wave shield, which enables the manufacturing of a film for an electromagnetic wave shield, and by which a noise suppression layer can be formed on an electronic component-sealed body with an electronic component relatively easily with superior productivity.SOLUTION: A method for manufacturing a film 300 for electromagnetic wave shield according to the present invention is used to form a noise suppression layer 3 for covering upper and side faces of a sealing part 27 on an electronic component-sealed body 290 having a substrate, an electronic component disposed on the substrate and a sealing part 27 for sealing the electronic component. The film 300 for electromagnetic wave shield comprises a peeling layer 1 (base material layer) and the noise suppression layer 3. The method comprises: a supplying step of preparing the base material layer 1 and supplying a liquid material to form the noise suppression layer 3 onto the base material layer 1; and a drying step of drying the supplied liquid material (liquid coating 32) to form the noise suppression layer 3 on the base material layer 1, thereby obtaining the film 300 for electromagnetic wave shield.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a method of manufacturing a film for electromagnetic wave shielding.

  Conventionally, electronic components susceptible to electromagnetic waves such as mobile phones and medical devices, semiconductor electronic components such as semiconductor elements, various electronic components such as capacitors and coils, or electronic components thereof are mounted on a circuit board. In order to reduce the influence of noise due to electromagnetic waves, a shielding method has been practiced in which these electronic components or electronic devices are sealed with a metal can shield such as aluminum or SUS.

  However, this metal can shield is applied to a set of parts arranged according to type, and the arrangement restricts the arrangement of each part on the substrate, and the design freedom of the substrate is not necessarily from the functional aspect. It is not the best. Furthermore, since the assembly of parts is sealed by the metal can shield, a space is generated between the metal can shield and the assembly of parts, which causes a problem of increasing the size of the electronic device provided with the assembly of parts. .

  Therefore, in order to solve such a problem, the noise suppression layer in which the upper surface and the side surface of the electronic component sealing body in which the electronic component disposed on the substrate is sealed with a sealing material is formed of a metal thin film layer or the like. The method of coating with is proposed (for example, refer patent document 1).

  However, in the method of reducing the influence of noise due to electromagnetic waves by forming a noise suppression layer on the electronic component package, this noise suppression layer is mainly manufactured using the sputtering method, but in this case, the sputtering method There is a problem that the apparatus used is complicated and expensive in operation, and low in productivity.

  Also, although it is conceivable to form a noise suppression layer by using a metal paste containing conductive particles or by using a plating method, there are also various problems by these methods. there were.

JP, 2015-130484, A

  An object of the present invention is to provide an electromagnetic wave shielding film capable of manufacturing a film for electromagnetic wave shielding which can form a noise suppression layer relatively easily and with excellent productivity on an electronic component sealing body provided with electronic components. It is an object of the present invention to provide a method of producing a film.

Such an object is achieved by the present invention described in the following (1) to (9).
(1) Noise suppression for covering an upper surface and a side surface of the sealing portion on an electronic component sealing body having a substrate, an electronic component disposed on the substrate, and a sealing portion for sealing the electronic component It is a manufacturing method of the film for electromagnetic wave shields which is used in order to form a layer, and is provided with the base material layer and the said noise suppression layer laminated | stacked on one surface side of this base material layer,
Supplying the liquid material for forming the base layer and forming the noise suppression layer on the base layer;
And d) drying the supplied liquid material to form the noise suppression layer on the base layer, thereby obtaining the film for shielding an electromagnetic wave.

  (2) The method for producing a film for electromagnetic wave shielding according to the above (1), wherein the liquid material contains a particulate conductive material, a binder resin, and a solvent.

  (3) The method for producing a film for electromagnetic shielding according to (2), wherein the conductive material is at least one of a metal material, a metal oxide material, a conductive polymer material and a conductive ceramic material.

  (4) The said binder resin is a manufacturing of the film for electromagnetic wave shield as described in said (2) or (3) which is at least 1 sort (s) among an epoxy resin, a urethane resin, an olefin resin, a polyester resin, a polyamide resin, and a silicone resin. Method.

  (5) The method according to any one of the above (2) to (4), wherein the solvent is at least one of methyl ethyl ketone, toluene, ethyl acetate, isopropyl alcohol, tetradecane and hexane.

  (6) In the supply step, a laminate having a three-layer structure in which the first layer, the second layer, and the third layer are stacked in this order is prepared as the base material layer, and then, The method according to any one of (1) to (5), wherein the liquid material is supplied to the third layer.

  (7) The manufacturing method of the film for electromagnetic wave shielding as described in said (6) which obtains the said base material layer comprised by the said laminated body using the co-extrusion method in the said supply process.

  (8) The film for electromagnetic wave shielding according to the above (6) or (7), wherein the first layer and the third layer each have a storage elastic modulus at 100 ° C. of 1.0E + 05 Pa or more and 1.0E + 11 Pa or less Manufacturing method.

  (9) The manufacturing method of the film for electromagnetic wave shields in any one of said (6) thru | or (8) whose storage elastic modulus in 100 degreeC of the said 2nd layer is 1.0E + 04Pa or more and 1.0E + 10 Pa or less.

  According to the present invention, a film for electromagnetic wave shielding having a base material layer and a noise suppression layer laminated on the base material layer is attached to the upper surface side of the electronic component package, and then from the noise suppression layer to the base The film for electromagnetic wave shielding which can provide a noise suppression layer in an electronic component sealing body by a comparatively easy method which says that a material layer is exfoliated can be manufactured certainly.

  Furthermore, by using the film for electromagnetic wave shielding obtained by the method for manufacturing a film for electromagnetic wave shielding of the present invention, a plurality of electronic component sealing bodies can be collectively manufactured from one electronic component sealing connection body. Therefore, the productivity of the electronic component package and the electronic device can be improved.

It is a longitudinal cross-sectional view which shows embodiment of the semiconductor device manufactured using the film for electromagnetic wave shields obtained by the manufacturing method of the film for electromagnetic wave shields of this invention. FIG. 7 is a longitudinal cross-sectional view for illustrating a method of manufacturing the semiconductor device shown in FIG. 1. FIG. 7 is a longitudinal cross-sectional view for illustrating a method of manufacturing the semiconductor device shown in FIG. 1. It is a longitudinal cross-sectional view of the film for electromagnetic wave shields manufactured with the manufacturing method of the film for electromagnetic wave shieldings of this invention. It is a side view of the film manufacturing apparatus for electromagnetic wave shields to which the manufacturing method of the film for electromagnetic wave shields of this invention was applied.

  BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the method for producing an electromagnetic wave shielding film of the present invention will be described in detail based on the preferred embodiments shown in the attached drawings.

  In the following, prior to describing the method for producing a film for electromagnetic wave shielding of the present invention, first, a semiconductor device produced using the film for electromagnetic wave shielding obtained by the method for producing a film for electromagnetic wave shielding of the present invention explain.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an embodiment of a semiconductor device manufactured using an electromagnetic wave shielding film obtained by the method of manufacturing an electromagnetic wave shielding film according to the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side as “lower”.

  The semiconductor device 20 shown in FIG. 1 includes an interposer (substrate) 25 having conductor posts (not shown) disposed penetrating in the thickness direction, a semiconductor element 26 and a capacitor disposed on the interposer 25, A sealing portion 27 (mold portion) for sealing the electronic element 28 such as a coil, the semiconductor element 26 and the electronic element 28, a noise suppression layer 3 for covering the sealing portion 27 and the interposer 25, a conductor post Wiring 23 electrically connected, bump 21 (terminal) electrically connected to wiring 23, and covering portion 22 provided to cover wiring 23 and expose bump 21. ing.

  The interposer 25 is a substrate for supporting the semiconductor element 26 and the electronic element 28. The plan view shape thereof is usually a square such as a square or a rectangle. The interposer 25 is formed with a plurality of through holes (not shown) penetrating in the thickness direction, and conductor posts are provided corresponding to the through holes.

  In the present embodiment, the semiconductor element 26 is disposed on the interposer 25 so that the semiconductor element 26 and the electronic element 28 have electrode pads provided on the lower surface side of the semiconductor element 26 and the electronic element 28 respectively corresponding to the conductor posts. One and two electronic elements 28 are arranged. In the present embodiment, the semiconductor element 26 and the electronic element 28 constitute an electronic component included in the semiconductor device 20.

  In a state where the semiconductor element 26 and the electronic element 28 are disposed at such a position, the sealing portion 27 is formed to cover the upper surface side of the semiconductor element 26, the electronic element 28 and the interposer 25.

  The conductor post formed correspondingly to the through hole of the interposer 25 is electrically connected to the electrode pad (terminal) of the semiconductor element 26 or the electronic element 28 at the upper end thereof.

  Further, on the lower surface of the interposer 25, a wire 23 formed in a predetermined shape is provided, and a portion thereof is electrically connected to the lower end of the conductor post.

  Furthermore, a spherical bump 21 is electrically connected to the lower surface of the wiring 23, whereby the semiconductor element 26 or the electronic element 28 and the bump 21 are connected to an electrode pad (terminal), a conductor post, and a wiring. It is electrically connected through 23. Further, a covering portion 22 provided with an opening 221 for exposing the bump 21 from the lower side thereof is provided to cover the wiring 23.

  The noise suppression layer 3 is provided to cover the upper surface of the sealing portion 27, the side surface of the sealing portion 27, and the side surface of the interposer 25. By the noise suppression layer 3, the semiconductor element 26 and the electronic element 28 provided on the interposer 25 and the noise suppression layer 3 are positioned outside the semiconductor element 26 and the electronic element 28, that is, outside the semiconductor device 20. Noise from electromagnetic waves is suppressed by blocking (shielding) the electromagnetic waves generated from at least one of the other electronic components and the like. The noise suppression layer 3 is electrically grounded via a wiring (not shown) on the side of the interposer 25.

  In the present embodiment, the semiconductor device 26 includes the semiconductor element 26 and the electronic element 28 that constitute the electronic component, one and two each. However, the present invention is not limited to this configuration, and the semiconductor device (electronic device) The semiconductor device 26 and the electronic device 28 described above may be provided, and further, an electronic component different from the semiconductor device 26 and the electronic device 28 may be provided. It may be one.

(Method of Manufacturing Semiconductor Device 20)
The semiconductor device 20 having the above configuration is manufactured by the method for manufacturing a semiconductor device 20 described below, using the film for electromagnetic shielding obtained by the method for manufacturing an electromagnetic shielding film of the present invention.

  The method of manufacturing a semiconductor device 20 using the film for electromagnetic shielding obtained by the method of manufacturing a film for electromagnetic shielding of the present invention prepares a sheet material having a flat plate shape, and arranges a plurality of electronic components on the sheet And a sealing portion forming step for obtaining an electronic component sealing and coupling body by sealing so as to cover the sheet material and the electronic component on the upper surface side where the electronic component is arranged, and the sealing step. And a first sticking step of sticking a pressure-sensitive adhesive tape having a substrate and a pressure-sensitive adhesive layer laminated on the substrate on the lower surface side of the electronic component-sealed connector with the pressure-sensitive adhesive layer on the electronic component-sealed connector side The electronic component sealing body attached to the adhesive tape is formed by cutting the electronic component sealing connection in the thickness direction so as to correspond to each electronic component sealing body to be formed. And a peeling layer on the upper surface side of the electronic component package. An electromagnetic wave shielding film having a noise suppression layer laminated on the peeling layer with the noise suppression layer facing the electronic component sealing body, and pressing the noise suppression layer corresponding to the shape of the recess, noise The noise suppression layer is provided in a state of being attached to the adhesive tape by peeling the peeling layer from the electromagnetic wave shielding film from the second sticking step of covering the upper surface and the side surface of the electronic component package with the suppression layer. A second peeling step for obtaining a sealed electronic component, and a second peeling for collectively obtaining a plurality of electronic component seals provided with a noise suppression layer by peeling an adhesive tape from the electronic component sealed body In the process, the lower surface side of the interposer (substrate), the wiring forming process for forming the wiring, and the lower surface side of the interposer (substrate), the covering portion including the opening is formed so that a part of the wiring is exposed. Do A covering portion forming step, the wiring exposed at the opening, and a bump connecting step of electrically connecting the bumps.

Each of these steps will be described in detail below.
2 to 3 are longitudinal sectional views for explaining the manufacturing method for manufacturing the semiconductor device shown in FIG. 1, and FIG. 4 is a film for an electromagnetic wave shielding manufactured by the method for manufacturing an electromagnetic shielding film of the present invention. It is a longitudinal cross-sectional view. In the following description, the upper side in FIGS. 2 to 4 is referred to as “upper” and the lower side as “lower”.

  [1] First, after preparing a flat sheet material 25 'as shown in FIG. 2A, a plurality of semiconductor elements 26 and electronic elements 28 are disposed (mounted) on the sheet material 25'. (See FIG. 2 (b). Placement process).

  The sheet material 25 'includes a plurality of through holes (not shown) formed in advance, and further includes conductor posts (not shown) embedded corresponding to the through holes, When the semiconductor element 26 and the electronic element 28 are disposed on the sheet material 25 ′, the conductor post is formed at a position where the electrode pad (terminal) provided in the semiconductor element 26 and the electronic element 28 corresponds. That is, in the sheet material 25 ′, conductor posts provided corresponding to the through holes are the total number of electrode pads (terminals) provided on the plurality of semiconductor elements 26 and the electronic elements 28 disposed on the sheet material 25 ′. It is formed by the same number.

  Further, the sheet material 25 'is cut in the thickness direction to be separated into individual pieces, thereby becoming an interposer 25 (substrate) of the semiconductor device 20 and exhibiting a function of supporting the semiconductor element 26 and the electronic element 28. It is a thing.

  The sheet material 25 'may be any material as long as it has a hardness enough to support the semiconductor element 26 and the electronic element 28. The sheet material 25' is not particularly limited. The substrate may be either a rigid substrate (hard substrate) such as a buildup substrate composed of an up material, or a flexible substrate (flexible substrate). Among these, the buildup substrate is particularly preferred. . The buildup substrate is preferably used particularly because of its excellent processability.

  The buildup material is not particularly limited. For example, a cured resin composition containing a thermosetting resin such as phenol resin, urea resin, melamine resin, epoxy resin, a curing agent, and an inorganic filler, etc. What is comprised as a main material is a thing.

  The core substrate is not particularly limited, and examples thereof include those mainly composed of thermosetting resins such as cyanate resin, epoxy resin, and bismaleimide-triazine resin.

  Furthermore, as a flexible substrate, for example, polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), polytetrafluoroethylene (PTFE), polyimide benzoxazole (PIBO), liquid crystal polymer, etc. Include those made of thermoplastic resins and the like.

  Further, when the semiconductor element 26 and the electronic element 28 are disposed on the sheet material 25 ′, the semiconductor element 26 and the electronic element 28 are respectively disposed at the positions of the conductor posts provided in the sheet material 25 ′. Are disposed at corresponding positions. Then, with such an arrangement, the semiconductor element 26 and the electronic element 28 are disposed on the sheet material 25 ′ at the position where the semiconductor element 26 and the electronic element 28 included in the semiconductor device 20 to be formed should be disposed. Become.

  The semiconductor element 26 and the electronic element 28 (in particular, the semiconductor element 26) may or may not be fixed on the sheet 25 ', but an adhesive such as an epoxy adhesive (underfill material) Are preferably fixed by Thereby, in the next step [3], when the semiconductor element 26 and the electronic element 28 are sealed by the sealing portion 27, the positional deviation of the semiconductor element 26 and the electronic element 28 is effectively prevented. be able to.

  [2] Next, the upper surface side of the sheet material 25 ′, that is, the surface on which the semiconductor element 26 and the electronic element 28 are disposed is sealed so as to cover the sheet material 25 ′, the semiconductor element 26 and the electronic element 28. The portion 27 is formed (see FIG. 2 (c); sealing portion forming step).

  Thereby, the electronic component sealing and coupling body 270 in which the sheet material 25 ′, the semiconductor element 26 and the electronic element 28 are sealed by the sealing portion 27 on the upper surface side of the sheet material 25 ′ is obtained.

  The method for forming the sealing portion 27 is not particularly limited. For example, in a state in which a thermosetting resin composition such as a granular epoxy resin composition is melted, the sheet material 25 ′, the semiconductor element 26, and After supplying the upper surface of sheet material 25 'so that the electronic device 28 may be covered, the method of compression-molding the thermosetting resin composition of this molten state is mentioned. According to this method, the semiconductor element 26 can be easily and densely sealed by the sealing portion 27 on the sheet material 25 ′.

  [3] Next, the adhesive tape 100 having the base 4 and the adhesive layer 2 laminated on the base 4 is prepared, and as shown in FIG. 2 (d), the semiconductor element 26 etc. The adhesive tape 100 is laminated (adhered) to the electronic component sealing connector 270 with the adhesive layer 2 on the electronic component sealing connector 270 side on the side (lower surface side) on which the Sticking process).

  To attach the adhesive tape 100 to the electronic component sealing connector 270, for example, the adhesive tape 100 is placed on a dicer table (not shown), and the surface of the sheet 25 'opposite to the semiconductor element 26 etc. It can be performed by placing it on the adhesive layer 2 and lightly pressing it. The electronic component sealing connector 270 may be attached to the adhesive tape 100 in advance, and then installed on a dicer table.

  The adhesive tape 100 (dicing tape) supports the electronic component sealing connection 270 by the base material 4 via the adhesive layer 2 and applies energy to the adhesive layer 2 to seal the electronic component of the adhesive layer 2 It has a function of reducing the adhesion to the connector 270.

  In the pressure-sensitive adhesive tape 100 having such a configuration, the base material 4 is mainly made of a resin material and has a hardness that can support the electronic component sealing connector 270 attached on the base material 4 through the pressure-sensitive adhesive layer 2 These resin materials include, for example, polyethylene, polypropylene, polyolefin resins, ionomers, olefin copolymers, polyester resins, polyether ketones and the like, and one or more of them are used. Can be used in combination.

  When obtaining the electronic component sealing body 290 by dicing and separating the electronic component sealing connection body 270 in the next step [4] in the subsequent step [4], the electronic component sealing connection body 270 (electronic component It has a function to adhere to and support the sealing body 290). In addition, adhesion of the adhesive layer 2 to the electronic component sealing body 290 is lowered by the application of energy to the adhesive layer 2, whereby the adhesive layer 2 can be easily peeled off between the adhesive layer 2 and the electronic component sealing body 290. It will be in the state which can be made to occur.

  The adhesive layer 2 having such a function is constituted of, for example, a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin for curing the adhesive layer 2 as main materials.

  As such a base resin (1), for example, acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins A well-known thing used as an adhesive layer component like resin (adhesive) or urethane type resin (adhesive) is mentioned.

  Moreover, curable resin (2) is provided with the hardenability hardened | cured by provision of energy, for example. As a result of the base resin being taken into the crosslinked structure of the curable resin by this curing, the adhesive strength of the adhesive layer 2 is reduced.

  As such a curable resin, for example, a low molecular weight having at least two or more polymerizable carbon-carbon double bonds which can be three-dimensionally cross-linked by irradiation of energy rays such as ultraviolet rays and electron beams in a molecule as a functional group Compounds are used.

  Moreover, in the resin composition which comprises the adhesion layer 2, a photoinitiator, a crosslinking agent, an antistatic agent, a tackifier, aging as other components other than each component (1), (2) mentioned above At least one of an inhibitor, an adhesion modifier, a filler, a colorant, a flame retardant, a softener, an antioxidant, a plasticizer, a surfactant, and the like may be contained.

  [4] Next, the electronic component sealing and coupling body 270 to which the adhesive tape 100 is attached is fixed using, for example, a wafer ring or the like, and then a semiconductor device 20 to be formed using a dicing saw (blade). (Corresponding to each area where one semiconductor element 26 and two electronic elements 28 to be provided in the semiconductor device 20 are sealed by the sealing portion 27) Then, the electronic component sealing connection body 270 is cut in the thickness direction (dicing) to form the recess 62 (cutting step (dicing step); see FIG. 2E).

  As a result, the electronic component sealing body 290 in which the electronic component sealing and coupling body 270 is singulated corresponding to each combination of one semiconductor element 26 and two electronic elements 28 is attached onto the adhesive tape 100. It is obtained in

  Under the present circumstances, the adhesive tape 100 has a buffer action, and exhibits the function to prevent the crack at the time of cut | disconnecting the electronic component sealing connection body 270, a chipping, etc.

  Further, in the present embodiment, as shown in FIG. 2E, the cutting of the electronic component sealing and coupling body 270 using the blade is in the middle of the base material 4 in the thickness direction of the base material 4 until it reaches To be implemented. Thereby, singulation of the electronic component sealing connection body 270 can be implemented reliably. Further, in a state where the electronic component sealing body 290 is attached to the adhesive tape 100, the side surface of the electronic component sealing body 290 formed by singulation, that is, the side surface of the sealing portion 27 and the interposer 25 Can be reliably exposed.

  [5] Next, a film 300 for electromagnetic wave shielding having the peeling layer 1 (base material layer) and the noise suppression layer 3 laminated on the peeling layer 1 is prepared, and the electronic component sealing obtained by singulation is performed. With the electronic component sealing body 290, the film 300 for shielding an electromagnetic wave, and the noise suppression layer 3 on the electronic component sealing body 290 side on the surface side (upper surface side) where the sealing portion 27 of the body 290 is formed Stack (paste) (second paste process).

  Although it does not specifically limit as method to affix the film 300 for electromagnetic wave shields to this electronic component sealing body 290, For example, vacuum pressure air molding or the press molding method is mentioned.

  Vacuum pressure forming is a method of covering the upper surface and the side surface of the electronic component sealing body 290 obtained by singulation with the film 300 for electromagnetic wave shielding using, for example, a vacuum pressure type laminator, first of all, As shown in FIG. 2 (f), the surface of the electronic component sealing body 290 on the opposite side to the adhesive tape 100 and the surface of the film for electromagnetic wave shielding 300 on the side of the noise suppression layer 3 The electronic component sealing body 290 and the electromagnetic wave shielding film 300 are set in a superimposed state so that they face each other, and then they are uniformly heated from the electromagnetic wave shielding film 300 side under heating. It is carried out by placing the closed space under a vacuum atmosphere and then applying pressure so that the electronic component sealing body 290 approaches to each other.

  Thus, the peeling layer 1 pushes the noise suppression layer 3 corresponding to the shape of the recess 62 by making the closed space under a vacuum atmosphere while uniformly pressing from the electromagnetic wave shielding film 300 side. In addition, the noise suppression layer 3 positioned closer to the electronic component package 290 than the release layer 1 is deformed in correspondence with the shape of the recess 62. Thereby, as shown in FIG. 3A, the upper surface and the side surface of the electronic component sealing body 290 are covered with the noise suppression layer 3 in a state in which the noise suppression layer 3 is pressed corresponding to the shape of the recess 62. Ru.

  The temperature to be attached in such a second attaching step is not particularly limited, but is preferably 15 ° C. or more and 220 ° C. or less, more preferably 20 ° C. or more and 210 ° C. or less, still more preferably 150 ° C. or more and 200 ° C. or less It is.

  The pressure to be attached is not particularly limited, but is preferably 0.1 MPa or more and 20.0 MPa or less, and more preferably 0.5 MPa or more and 15.0 MPa or less.

  Furthermore, the time for sticking is not particularly limited, but is preferably 5 seconds to 90 minutes, and more preferably 30 seconds to 10 minutes.

  By setting the conditions in the second pasting step within the above range, the noise suppression layer 3 is pushed into the recesses 62 between the adjacent electronic component sealing bodies 290, and the noise suppression layer 3 is used to make the electronic components The top and side surfaces of the sealing body 290 can be reliably covered.

  Moreover, with the press molding method, for example, the film 300 for electromagnetic wave shielding is disposed on the electronic component sealing body 290 attached on the adhesive tape 100, and the cushion material is further disposed on the film 300 for electromagnetic wave shielding. In the state, they are held by holding two flat plates from the upper surface side and the lower surface side, and then bringing the two flat plates close to each other to press them.

  Thus, the peeling layer 1 corresponds to the shape of the recess 62 also by bringing the film for electromagnetic shielding 300 and the electronic component sealing body 290 closer to each other in a state where the cushioning material is disposed on the film for electromagnetic shielding 300. Then, the noise suppression layer 3 can be pressed, and the noise suppression layer 3 located closer to the electronic component sealed body 290 than the peeling layer 1 can be deformed according to the shape of the recess 62 in accordance with the pressing. Therefore, as shown in FIG. 3A, the noise suppression layer 3 covers the upper surface and the side surface of the electronic component sealing body 290 in a state where the noise suppression layer 3 is pressed in according to the shape of the recess 62. Can.

  Here, the film 300 for an electromagnetic shielding used in the present step [5] is the electronic component sealing body 290 in a state where the noise suppression layer 3 is pushed into the concave portion 62 between the electronic component sealing bodies 290 adjacent to each other. Used to coat the noise suppression layer 3, that is, to form the noise suppression layer 3 covering the upper surface and the side surface of the sealing portion 27 and the side surface of the interposer 25 on the electronic component sealing body 290. It has the peeling layer 1 (base material layer) and the noise suppression layer 3 laminated | stacked on one surface side of the peeling layer 1, and the noise suppression layer 3 is made the electronic component sealing body 290 side, and is arrange | positioned. (See FIG. 2 (f), FIG. 4).

  In such a film 300 for electromagnetic wave shielding, the peeling layer 1 is pushed in when covering the upper surface and the side surface of the electronic component sealed body 290 by pushing the noise suppression layer 3 following the shape of the concave portion 62. It functions as a protective (buffer) material that prevents the noise suppression layer 3 from breaking. Moreover, it peels from the noise suppression layer 3 in the following process [6].

  The storage elastic modulus at 100 ° C. of the peeling layer 1 is preferably 1.0E + 04 Pa or more and 1.0E + 11 Pa or less, more preferably 1.0E + 05 Pa or more and 1.0E + 10 Pa or less, and 1.0E + 06 Pa or more and 5.0E + 09 or more. It is further preferred that Thus, by setting the storage elastic modulus at 100 ° C. of the peeling layer 1 within the above range, it can be said that the peeling layer 1 has flexibility, and the electromagnetic wave shielding film 300 is used. When covering the upper surface and the side surface of the electronic component package 290, the noise suppression layer 3 can be pressed in a state corresponding to the shape of the recess 62 without causing the noise suppression layer 3 to break. Thereby, the upper surface and the side surface of the electronic component sealing body 290 are covered with the noise suppression layer 3 in a state where the noise suppression layer 3 is pressed in according to the shape of the recess 62. As a result, since the upper surface and the side surface of the electronic component package 290 are covered with the noise suppression layer 3 in which the occurrence of breakage is prevented, the electromagnetic wave shielding (blocking) property by the noise suppression layer 3 is improved. It will be done.

  In the present embodiment, the peeling layer 1 is composed of the third layer 13, the second layer 12, and the first layer 11, and the surface on which the noise suppression layer 3 of the peeling layer 1 is laminated. From the side, the layers are stacked in this order, and the types, thicknesses, and the like of the layers 11 to 13 are appropriately combined (see FIG. 4) so that the characteristics of the release layer 1 described above are exhibited.

Each of the layers 11 to 13 will be described below.
The first layer 11 is a pressing portion of the vacuum pressure type laminator or the like when the noise suppression layer 3 is pressed using the vacuum pressure type laminator or the like corresponding to the shape of the concave portion 62 in the second bonding step. It is for giving the function of the releasability of and. Moreover, it is for propagating the thrust from a press part to the 2nd layer 12 side.

  The constituent material of the first layer (first release layer) 11 is not particularly limited. For example, a resin such as syndiotactic polystyrene, polymethylpentene, polybutylene terephthalate, polypropylene, cyclic olefin polymer, and silicone Materials can be mentioned. Among these, it is preferable to use polymethylpentene. As described above, by using a material having polymethylpentene, the releasability of the first layer 11 from the device, and further, the heat resistance and the shape followability can be made excellent.

  When polymethylpentene is used for the first layer 11, its content is not particularly limited, but is preferably 60% by weight or more, and more preferably 70% by weight or more and 95% by weight or less. If the content of polymethylpentene is less than the lower limit value, the releasability of the first layer 11 may be reduced. Moreover, when content of polymethyl pentene exceeds the said upper limit, there exists a possibility that shape following property of the 1st layer 11 may run short.

  The first layer 11 may be made of only polymethylpentene. In addition to polymethylpentene, the first layer 11 may further contain a styrenic elastomer, polyethylene, polypropylene or the like.

  The average thickness of the first layer 11 is not particularly limited, but is preferably 5 μm or more and 100 μm or less, and more preferably 10 μm or more and 65 μm or less. If the average thickness of the first layer 11 is less than the lower limit value, the first layer 11 may be broken and its releasability may be reduced. In addition, when the average thickness of the first layer 11 exceeds the upper limit value, the shape following property of the peeling layer 1 may be reduced, and the shape following property of the noise suppression layer 3 may be reduced.

  The storage elastic modulus at 100 ° C. of the first layer 11 is preferably 1.0E + 05 Pa or more and 1.0E + 11 Pa or less, and more preferably 5.0E + 06 Pa or more and 1.0E + 10 Pa or less. By setting the storage elastic modulus of the first layer 11 within such a range, the first layer 11 has excellent stretchability at the time of heating of the film 300 for shielding electromagnetic waves, so the noise suppression layer Shape followability to the concave portion 62 of 3 can be more reliably improved. Moreover, the storage elastic modulus as the whole peeling layer 1 can be set comparatively easily in the range mentioned above.

  Furthermore, the surface tension of the first layer 11 is preferably 20 to 40 [mN / m], and more preferably 25 to 35 [mN / m]. The first layer 11 having a surface tension within this range can be said to have excellent releasability, and the first layer 11 is peeled off from the pressing portion after pressing using a vacuum pressure type laminator or the like. It can be done.

  The third layer 13 is a peeling layer in the first peeling step [6] after the pressing of the noise suppression layer 3 into the recess 62 is performed using the vacuum pressure type laminator or the like in the second bonding step [5]. When peeling 1 from the noise suppression layer 3, the peeling layer 1 is provided with a peelable function. In addition, according to the shape of the recess 62, the third layer 13 has the function of following capability, and the noise suppression layer 3 also has a function of transmitting the pressure from the pressing portion. .

  The constituent material of the third layer (second release layer) 13 is not particularly limited. For example, a resin such as syndiotactic polystyrene, polymethylpentene, polybutylene terephthalate, polypropylene, cyclic olefin polymer, silicone Materials can be mentioned. Among these, it is preferable to use polymethylpentene. As described above, by using polymethylpentene, the releasability of the third layer 13 from the noise suppression layer 3, and further, the heat resistance and the shape following property can be made excellent.

  The content of polymethylpentene in the third layer 13 is not particularly limited, but is preferably 60% by weight or more, and more preferably 70% by weight or more and 95% by weight or less. When the content of polymethylpentene is less than the lower limit value, the releasability of the third layer 13 may be reduced. Moreover, when content of polymethyl pentene exceeds the said upper limit, there exists a possibility that shape following property of the 3rd layer 13 may run short.

  Although the third layer 13 may be made of only polymethylpentene, it may further contain styrene elastomer, polyethylene, polypropylene or the like in addition to the polymethylpentene. Moreover, the resin which comprises the 3rd layer 13 and the 1st layer 11 may be same or different.

  The average thickness of the third layer 13 is not particularly limited, but is preferably 5 μm or more and 100 μm or less, and more preferably 10 μm or more and 65 μm or less. When the average thickness of the third layer 13 is less than the lower limit, the heat resistance is insufficient, the heat resistance of the base material layer is insufficient in the second bonding step [5], and deformation occurs, and the noise suppression layer 3 may be deformed. In addition, when the average thickness of the third layer 13 exceeds the upper limit, the total thickness of the whole film for an electromagnetic shielding film may be increased, and the workability such as cutting may be deteriorated. It is not target.

  The thicknesses of the first layer 11 and the third layer 13 may be the same or different.

  The storage elastic modulus at 100 ° C. of the third layer 13 is preferably 1.0E + 05 Pa or more and 1.0E + 11 Pa or less, and more preferably 5.0E + 06 Pa or more and 1.0E + 10 Pa or less. By setting the storage elastic modulus of the third layer 13 within such a range, the third layer 13 has excellent stretchability at the time of heating of the film 300 for shielding an electromagnetic wave. It is possible to more reliably improve the shape followability of the layer 13 and further the concave portion 62 of the noise suppression layer 3.

  Furthermore, the surface tension of the third layer 13 is preferably 20 to 40 [mN / m], and more preferably 25 to 35 [mN / m]. The third layer 13 having a surface tension within this range can be said to have excellent releasability, and the peeling layer 1 is peeled from the noise suppression layer 3 after pressing using a vacuum pressure type laminator or the like. In the process, the peeling layer 1 can be reliably peeled at the interface between the third layer 13 and the noise suppression layer 3.

  The second layer 12 is used as the third layer 13 when pressing the noise suppression layer 3 into the recess 62 using the peeling layer 1 as a base for pressing in the second bonding step [5]. 62 has a cushioning function for pushing in (embedding). In addition, the second layer 12 has a function of causing the pressing force to uniformly act on the noise suppression layer 3 via the third layer 13 and further on the third layer 13. Thus, the noise suppression layer 3 can be pushed into the recess 62 with excellent sealing performance (followability) without generating a void between the noise suppression layer 3 and the recess 62.

  The constituent material of the second layer 12 (cushion layer) is, for example, an α-olefin polymer such as polyethylene or polypropylene, ethylene, propylene, butene, pentene, hexene, methylpentene or the like as a copolymer component Engineering plastics resin such as α-olefin copolymer, polyether sulfone and polyphenylene sulfide may be mentioned, and these may be used alone or in combination. Among these, it is preferable to use an α-olefin copolymer. Specifically, a copolymer of an α-olefin such as ethylene and a (meth) acrylic ester, a copolymer of ethylene and vinyl acetate, a copolymer of ethylene and (meth) acrylic acid (EMMA), And partial ion cross-linked products thereof. Since the α-olefin copolymer is excellent in shape followability and is further excellent in flexibility as compared with the constituent material of the first layer 11, the second layer 12 made of such constituent material is excellent in flexibility. A cushioning function for pushing (embedding) one layer 11 into the recess 62 can be reliably provided.

  The second layer 12 may be a blend of the constituent materials listed in the first layer 11 and the third layer 13 described above and the constituent material of the second layer 12.

  The average thickness of the second layer 12 is not particularly limited, but is preferably 20 μm or more and 500 μm or less, and more preferably 100 μm or more and 400 μm or less. When the average thickness of the second layer 12 is less than the lower limit value, there is a fear that the shape following property of the second layer 12 is insufficient and the following property to the concave part 62 is insufficient in the second pasting step [5]. There is. In addition, when the average thickness of the second layer 12 exceeds the upper limit value, in the second bonding step [5], the amount of resin stains from the second layer 12 increases, and the resin adheres to the heating plate of the crimping device. And there is a risk that the workability will be reduced.

  The storage elastic modulus at 100 ° C. of the second layer 12 is preferably 1.0E + 04 Pa or more and 1.0E + 10 Pa or less, and more preferably 1.0E + 05 Pa or more and 1.0E + 09 Pa or less. By setting the storage elastic modulus of the second layer 12 within such a range, the second layer 12 has better elasticity than the first layer 11 when the film for electromagnetic shielding 300 is heated. Can be made easy. Therefore, the shape followability of the second layer 12 and further the third layer 13 and the recess 62 of the noise suppression layer 3 can be more reliably improved.

  In addition, the storage elastic modulus of each of the layers 11 to 13 can be easily set in the range of 1.0E + 04Pa or more and 1.0E + 11Pa or less at 100 ° C. by appropriately setting the storage elastic modulus for each of the layers 11 to 13 within the above-described range. It can be set.

  The total thickness of the release layer 1 is not particularly limited, but is preferably 20 μm to 1000 μm, and more preferably 70 μm to 500 μm. When the average thickness of the entire release layer 1 is less than the lower limit value, the third layer 13 may be broken and the releasability of the release layer 1 may be reduced. Moreover, when the average thickness of the whole peeling layer 1 exceeds the said upper limit, there exists a possibility that the shape following property of the peeling layer 1 will fall and the shape following property with respect to the recessed part 62 of the noise suppression layer 3 may fall.

  The number of constituent layers of the release layer 1 is not particularly limited, and may be a multilayer structure of two or more layers including the three-layer structure as described above, or may be a single layer structure. good.

  Moreover, when making the peeling layer 1 into a thing of single layer structure, it does not specifically limit as a constituent material of this peeling layer 1, For example, syndiotactic polystyrene, polymethyl pentene, a polybutylene terephthalate, a polyethylene terephthalate, non-axial Examples thereof include polypropylenes such as oriented polypropylene and biaxially oriented polypropylene, cyclic olefin polymers, silicones, styrene elastomer resins, styrene butadiene rubbers, acrylic rubbers, epoxy resins, polyphenols, polyurethanes and the like. Among these, it is preferable to use polymethylpentene. Thereby, the indentation property of the peeling layer 1 to the noise suppression layer 3 and further the heat resistance can be improved, and the peeling layer 1 with good releasability from the noise suppression layer 3 at the time of the first peeling step [6] described later. Can be peeled off.

  Furthermore, the thickness of the peeling layer 1 in this case is not particularly limited, but is preferably 3 μm or more and 2000 μm or less, and more preferably 5 μm or more and 500 μm or less. When the average thickness of the peeling layer 1 is less than the lower limit, the peeling layer 1 and hence the noise suppression layer 3 may be broken, and the electromagnetic wave shielding properties may be reduced. In addition, when the average thickness of the peeling layer 1 exceeds the above upper limit, the pressing force from the peeling layer 1 to the noise suppression layer 3 is not sufficiently transmitted, and the pushability of the noise suppression layer 3 to the concave portion 62 is sufficiently obtained. There is no fear.

  The noise suppression layer 3 includes the semiconductor element 26 and the electronic element 28 provided in the electronic component sealing body 290, and the other electronic components and the like located on the opposite side of the electronic component sealing body 290 via the noise suppression layer 3. Has a function to block (shield) electromagnetic waves generated from at least one of them.

  This noise suppression layer 3 (electromagnetic wave blocking layer) is not particularly limited, and may block electromagnetic waves in any form, for example, blocking (shielding) by reflecting the electromagnetic waves incident on the noise suppression layer 3 And an absorption layer that blocks (shields) the electromagnetic wave incident on the noise suppression layer 3 by absorbing the electromagnetic wave.

  The reflection layer and the absorption layer both comprise a particulate conductive material and a binder resin, and as the conductive material, metal materials, metal oxide materials, conductive polymer materials and conductive materials Although the thing containing at least 1 sort (s) of ceramic materials is used preferably, these reflecting layers and an absorption layer are each demonstrated below.

The reflective layer blocks the electromagnetic wave incident on the reflective layer by reflecting it.
Examples of the reflective layer include a surface treatment of a conductive material such as a conductive adhesive layer, a metal thin film layer, a metal mesh, and ITO. These may be used alone or in combination. Among these, it is preferable to use a conductive adhesive layer. The conductive adhesive layer is preferably used as a reflective layer because it exhibits excellent electromagnetic wave shielding properties even when its film thickness (average thickness) is set relatively thin.

  The conductive adhesive layer includes metal powder (metal material) and a binder resin, and examples of the metal powder include gold, silver, copper or silver-coated copper, nickel and the like. Among these, silver is preferable because it is excellent in electromagnetic wave shielding properties.

  The content ratio of the metal powder to the binder resin in the conductive adhesive layer is not particularly limited, but is preferably 40:60 to 95: 5 by weight ratio, and is 50:50 to 90:10. More preferable.

  The conductive adhesive layer may further contain a flame retardant, a leveling agent, a viscosity modifier and the like in addition to the metal powder and the binder resin.

  The average thickness (E1) of the reflective layer is not particularly limited, but is preferably 100 nm or more and 100 μm or less, and more preferably 1 μm or more and 20 μm or less.

  The absorbing layer absorbs electromagnetic waves incident on the absorbing layer and shuts off by converting it into thermal energy.

  As the absorption layer, for example, a conductive absorption layer mainly composed of a conductive absorption material such as metal powder (metal material) and a conductive polymer material, a dielectric absorption material such as a carbon-based material and a conductive polymer material And magnetic absorbing layers composed mainly of magnetic absorbing materials such as soft magnetic metals, etc., and these may be used alone or in combination. In addition to the main material, the absorbent layer preferably contains a binder resin.

  Note that the conductive absorption layer absorbs electromagnetic waves by converting electromagnetic energy into heat energy by the current flowing inside the material when an electric field is applied, and the dielectric absorption layer converts the electromagnetic waves into heat energy by dielectric loss. By absorbing the electromagnetic wave, the magnetic absorption layer absorbs the electromagnetic wave by converting the energy of the radio wave into heat and consuming it by the magnetic loss such as the overcurrent loss, the hysteresis loss, and the magnetic resonance.

  Among these, it is preferable to use a dielectric absorption layer and a conductive absorption layer. The dielectric absorption layer and the conductive absorption layer are preferably used as an absorption layer because they exhibit excellent electromagnetic wave shielding properties even when the film thickness (average thickness) is set relatively thin. In addition, since the particle diameter of the material contained in the layer is small and the amount of addition thereof can be reduced, the film thickness can be set relatively easily and weight reduction is also possible.

  Examples of the conductive absorption material include conductive polymer materials, metal oxide materials such as ATO, and conductive ceramic materials.

  Moreover, as the conductive polymer, for example, polyacetylene, polypyrrole, PEDOT (poly-ethylenedioxythiophene), PEDOT / PSS, polythiophene, polyaniline, poly (p-phenylene), polyfluorene, polycarbazole, polysilane or derivatives thereof, etc. These may be used alone or in combination of two or more.

Examples of the dielectric material include carbon-based materials, conductive polymers, ceramic materials and the like.
Further, as the carbon-based material, for example, single-walled carbon nanotubes, carbon nanotubes such as multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, graphene, carbon microcoils, carbon Nanocoils, carbon nanohorns, carbon such as carbon nanowalls, etc. may be mentioned, and one or more of these may be used in combination.

  The ceramic material may, for example, be barium titanate, perovskite type barium calcium zirconate titanate crystalline particles, titania, alumina, zirconia, silicon carbide or aluminum nitride, and one or more of them may be used in combination. Can.

  Furthermore, as the magnetic absorption material, for example, iron, silicon steel, magnetic stainless steel (Fe-Cr-Al-Si alloy), sendust (Fe-Si-Al alloy), permalloy (Fe-Ni alloy), silicon copper (Fe Soft magnetic metals such as -Cu-Si alloy), Fe-Si alloy, Fe-Si-B (-Cu-Nb) alloy, ferrite and the like.

  The average thickness (E2) of the absorbing layer is not particularly limited, but is preferably 1 μm to 300 μm, and more preferably 2 μm to 100 μm.

  As the binder resin, various resin materials can be used for both the reflection layer and the absorption layer. For example, thermosetting resin such as epoxy resin, urethane resin, phenol resin, amino resin, thermosetting elastomer, olefin resin And thermoplastic resins such as thermoplastic elastomers such as acrylic resins, polyester resins, polyamide resins, silicone resins, vinyl chloride resins, styrene resins, styrene thermoplastic elastomers, and olefin thermoplastic elastomers. Although 1 type or 2 types or more can be used in combination, it is preferable that it is especially at least 1 type in an epoxy resin, a urethane resin, an olefin resin, a polyester resin, a polyamide resin, and a silicone resin. Thus, the conductive material can be dispersed with excellent dispersibility in the reflective layer and the absorbing layer.

  Further, the noise suppression layer 3 (reflection layer and absorption layer) having the above-described configuration contains an epoxy resin as a main material in accordance with JIS G 3469, and has a width of 25 mm on the plate-like sealing portion 27. Of the noise suppression layer 3 at 100.degree. C., and then holding one end of the noise suppression layer 3 and peeling at a rate of 300 mm / min in the direction of 90.degree. [N / mm], and based on JIS G 3469, contains polymethylpentene as a main material, and forms a plate-like peeling layer 1 (base material layer) on the noise suppression layer 3 with a width of 25 mm at 100 ° C. When the peel strength measured when holding at one end of the noise suppression layer 3 and peeling off at a speed of 300 mm / min in the direction of 90 ° at 25 ° C. is B [N / mm] , 1 <A / B It is preferable to satisfy the engagement, 1.5 <more preferably satisfies A / B becomes relation 2 <even more preferably satisfies the A / B becomes relevant. Thereby, in the next step [6], the peeling layer 1 can be reliably peeled off from the film 300 for an electromagnetic wave shield, and in the present step [5], the noise suppression layer 3 is pushed into the recess 62 At the same time, the occurrence of positional deviation between the third layer 13 and the noise suppression layer 3 can be accurately suppressed or prevented.

  In order to satisfy the relationship that peel strengths A and B satisfy 1 <A / B, the material of the noise suppression layer 3, the thickness, etc. are appropriately combined, and the method for producing the electromagnetic wave shielding film of the present invention Is applied.

  The peel strength A [N / mm] and the peel strength B [N / mm] should be measured using, for example, a tensile tester (manufactured by A & D Co., "TENSILON RTG-1310"). Can.

  [6] Next, as shown in FIG. 3B, the peeling layer 1 is peeled off from the electromagnetic wave shielding film 300 attached to the electronic component sealing body 290 (first peeling step).

  In the first peeling step, peeling occurs at the interface between the peeling layer 1 and the noise suppression layer 3 in the electromagnetic wave shielding film 300, and as a result, the peeling layer 1 is peeled from the noise suppression layer 3. Thereby, the upper surface and the side surface of the electronic component sealed body 290 are covered with the noise suppression layer 3 in a state where the peeling layer 1 is peeled from the noise suppression layer 3.

  That is, in a state of being attached onto the adhesive tape 100, a plurality of electronic component sealing bodies 290 provided with the noise suppression layer 3 on the upper surface and the side surface are collectively formed.

  Moreover, it does not specifically limit as a method to peel the peeling layer 1, For example, peeling by a manual work is mentioned.

  In this manual peeling, for example, first, one end of the peeling layer 1 is gripped, the peeling layer 1 is peeled from the noise suppression layer 3 from the gripped end, and then from the end to the center Furthermore, the peeling layer 1 is peeled from the noise suppression layer 3 by sequentially peeling the peeling layer 1 to the other end.

  At the time of peeling of the peeling layer 1, as described above, it is preferable to satisfy the relationship that the peel strength A and the peel strength B satisfy 1 <A / B. Thereby, the peeling layer 1 can be relatively easily peeled from the noise suppression layer 3 without leaving the noise suppression layer 3 in the peeling layer 1 in the present step. That is, the noise suppression layer 3 can be transferred from the peeling layer 1 to the upper surface and the side surface of the electronic component sealed body 290 (the sealing portion 27).

  The peeling temperature is preferably 180 ° C. or less, more preferably 165 ° C. or less, and still more preferably 20 ° C. or more and 150 ° C. or less.

  By passing through the steps as described above, the upper surface and the side surface of the electronic component sealing body 290 can be covered with the noise suppression layer 3 in a state where the peeling layer 1 is peeled from the noise suppression layer 3.

  According to such a process, as in the case where the noise suppression layer 3 is formed on the electronic component sealing body 290 by using the sputtering method, the operation of the device to be used does not become complicated or the device becomes expensive. After pasting the electromagnetic wave shielding film 300 having the peeling layer 1 and the noise suppression layer 3 on the electronic component sealing body 290 side, the electronic component sealing body 290 is a relatively easy method of peeling the peeling layer 1. Can be provided with a noise suppression layer 3.

  [7] Next, as shown in FIG. 3C, the adhesive tape 100 is peeled off from the electronic component sealed body 290 (second peeling step).

  In this second peeling step, energy is applied to the adhesive layer 2 provided in the adhesive tape 100 to reduce the adhesiveness of the adhesive layer 2 to the electronic component sealing body 290, and the adhesive layer 2 and the electronic component sealing body After the peeling is caused between 290 and 290, the adhesive tape 100 is peeled from the electronic component sealing body 290.

  As a result, a plurality of electronic component sealing bodies 290 whose upper surfaces and side surfaces are covered by the noise suppression layer 3 can be collectively formed in a plurality, so that the productivity of the electronic component sealing body 290 can be improved.

  The method for applying energy to the adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the adhesive layer 2 with an energy ray, a method of heating the adhesive layer 2 and the like, among them, the energy of the adhesive layer 2 It is preferable to use the method of irradiating a line from the base 4 side of the adhesive tape 100.

  Such a method does not require the semiconductor element 26 and the electronic element 28 to go through unnecessary heat history, and energy can be applied to the adhesive layer 2 relatively easily and efficiently. Are preferably used.

  Further, as the energy ray, for example, ultraviolet rays, an electron beam, a particle beam such as an ion beam, or a combination of two or more of these energy rays may be mentioned. Among these, it is particularly preferable to use ultraviolet light. According to the ultraviolet light, the adhesiveness of the adhesive layer 2 to the electronic component sealing body 290 can be efficiently reduced.

  [8] Next, as shown in FIG. 3D, the interposer 25 side of the electronic component package 290, that is, the surface side (lower surface side) opposite to the semiconductor element 26 and the electronic element 28 of the interposer 25. Then, the wiring 23 patterned in a predetermined shape is formed so as to be electrically connected to the conductor post (wiring formation step).

  The method of forming the wiring 23 is not particularly limited. For example, I: a method of forming the wiring 23 using a plating method such as electrolytic plating method, electroless plating method, II: containing a conductive material A liquid material is supplied to the surface of the electronic component sealing body 290 on the interposer 25 side, and the wiring 23 is formed by drying and solidifying, and the like, and the like. It is preferable to form According to the electrolytic plating method, the wiring 23 which exhibits excellent adhesion to the conductor post can be easily and surely formed.

  [9] Next, as shown in FIG. 3 (e), the interposer 25 side of the electronic component sealing body 290, that is, the surface side (lower surface side) opposite to the semiconductor element 26 and the electronic element 28 of the interposer 25. Then, the covering portion 22 including the opening 221 is formed so that a part of the wiring 23 is exposed (covering portion forming step).

  The opening 221 is formed to correspond to the position where the bump 21 is to be formed in the next process [7].

  Such a covering layer is usually formed of a laminate in which an upper layer mainly composed of Au is laminated on a lower layer mainly composed of Ni, and is formed, for example, using an electroless plating method.

  [10] Next, as shown in FIG. 3F, the bumps 21 are formed to be electrically connected to the wiring 23 exposed from the opening 221 (bump connecting step).

  Here, as in the present embodiment, the connection between the conductor post and the bump 21 is performed via the wiring 23, so that the bump 21 has a position different from that of the conductor post in the planar direction of the interposer 25. Can be placed. In other words, they can be arranged such that the central portions of the bumps 21 and the conductor posts do not overlap. Therefore, the bumps 21 can be formed at desired positions on the lower surface of the obtained semiconductor device 20.

  The method of bonding the bumps 21 to the wires 23 is not particularly limited, and for example, it is performed by interposing a flux having viscosity between the bumps 21 and the wires 23.

Moreover, as a constituent material of the bumps 21, for example, a brazing material such as solder, silver brazing, copper brazing, phosphorous copper brazing, etc. may be mentioned.
The semiconductor device 20 is manufactured through the above-described steps.

  According to such a method of manufacturing the semiconductor device 20, as in the case of forming the noise suppression layer 3 on the electronic component sealing body 290 using the sputtering method, the operation of the device used becomes complicated, or the device is expensive. In the step [5], the electromagnetic wave shielding film 300 having the peeling layer 1 and the noise suppression layer 3 is attached to the electronic component sealed body 290 in the step [5], and then peeling is performed in the step [6]. The noise suppression layer 3 can be provided on the electronic component sealing body 290 by a relatively easy method of peeling the layer 1.

  Furthermore, a plurality of electronic component sealed bodies 290 are collectively manufactured by passing through the aforementioned steps [3] to [7] from the one electronic component sealing connection 270 obtained in the aforementioned step [2]. As a result, the productivity of the semiconductor device 20 obtained from the electronic component package 290 and thus the electronic component package 290 can be improved.

  In the present embodiment, the noise suppression layer 3 is provided on the upper surface of the sealing portion 27 of the electronic component sealing body 290, the side surface of the sealing portion 27, and the side surface of the interposer 25. It may be formed on the upper surface of the sealing portion 27 and the side surface of the sealing portion 27, and the formation on the side surface of the interposer 25 may be omitted.

(Method of manufacturing film for electromagnetic shielding)
The electromagnetic wave shielding film 300 used in the method for manufacturing the semiconductor device 20 as described above is manufactured as follows by applying the method for manufacturing an electromagnetic wave shielding film of the present invention.

  In addition, below, the case where the peeling layer 1 (base material layer) prepared when manufacturing the film for electromagnetic wave shields is manufactured using an extrusion method is demonstrated to an example.

  First, the film manufacturing apparatus for an electromagnetic wave shield of the present embodiment to which the extrusion method is applied will be described.

  FIG. 5: is a side view of the film manufacturing apparatus for electromagnetic shielding to which the manufacturing method of the film for electromagnetic shielding of this invention was applied. In the following description, the upper side in FIG. 5 is referred to as “upper” and the lower side as “lower”.

  A film manufacturing apparatus 500 for an electromagnetic wave shield shown in FIG. 5 includes a peeling layer forming unit 780 having a sheet supply unit 700 and a sheet forming unit 800, a liquid material supply unit (dispenser 950) and a drying unit (hot air supply unit 960). And a noise suppression layer forming unit 900.

  The sheet supply unit 700 provided in the peeling layer forming unit 780 is connected to the extruders 410, 420, 430 and the molten resin discharge units 411, 421, 431 of the respective extruders 410, 420, 430 via the pipe 412. Seed 3-layer distribution type distribution machine 440 and T die 600 connected to distribution machine 440 via piping 412, and this T die 600 melts or softens belt-like molten sheet (sheet) 150 are supplied to the sheet forming unit 800.

  The extruders 410, 420 and 430 contain the constituent materials of the first layer 11, the second layer 12 and the third layer 13 described above, respectively, and these extruders 410, 420 and 430 are in a molten state Alternatively, each constituent material in a softened state is supplied to a three-kind three-layer distribution type distributor 440. Then, the distributor 440 supplies the constituent materials of the first layer 11, the second layer 12, and the third layer 13 to the T-die 600 in a distributed state so as to be laminated in this order, and then, T The die 600 is a molten sheet in a molten or softened state in which the constituent materials of the first layer 11, the second layer 12, and the third layer 13 supplied from the distributor 440 and packed are laminated in this order The sheet forming unit 800 is supplied as the sheet 150 by being pushed out from the opening 601.

  The sheet forming unit 800 further includes a touch roll 110, a cooling roll 120, and a post-stage cooling roll 130. Each of these rolls is configured to be independently rotated by a motor (driving means) (not shown), and the molten sheet 150 is cooled by the rotation of these rolls to form the first layer 11 and the first layer 11 and the first layer 11. A release layer 1 in which two layers 12 and a third layer 13 are laminated is continuously delivered. The first surface 615 and the second surface 613 of the molten sheet 150 are flattened by continuously feeding the molten or softened molten sheet 150 into the sheet forming section 800, and the molten sheet 150 has a desired thickness. Is set.

  Further, the molten sheet 150 is cooled by further supplying the molten sheet 150 which has passed between the cooling roll 120 and the touch roll 110 between the cooling roll 120 and the post-stage cooling roll 130, as a result. The release layer 1 is formed.

  The cooling roll 120 is a roll having a smooth outer peripheral surface, and includes cooling means for cooling the molten sheet 150 in the molten state supplied from the T-die 600. By pressing the molten sheet 150 against such a cooling roll 120, the first surface 615 is flattened and the molten sheet 150 is cooled.

  The touch roll 110 is a roll whose outer peripheral surface has smoothness, and is disposed to face the cooling roll 120. By feeding the molten sheet 150 between the touch roll 110 and the cooling roll 120, the second surface 613 of the molten sheet 150 is flattened.

  The post-stage cooling roll 130 is a roll having a smooth outer circumferential surface, includes cooling means for cooling the molten sheet 150, and is disposed at the rear stage of the touch roll 110 and the cooling roll 120. By supplying the molten sheet 150 to such a post-stage cooling roll 130, the molten sheet 150 can be cooled more reliably, and the peeling layer 1 can be obtained.

  In the present embodiment, the case where the cooling roll 120 has a cooling unit and the touch roll 110 does not have a cooling unit has been described. However, the present invention is not limited to this case, and at least one of the cooling roll 120 and the touch roll 110. The one side only needs to have a cooling means, the touch roll 110 may have a cooling means, and the cooling roll 120 may not have a cooling means, and both the cooling roll 120 and the touch roll 110 are cooled. You may have a means.

  Further, in the present embodiment, although the case where the sheet forming unit 800 includes the touch roll 110, the cooling roller 120, and the post-stage cooling roller 130 has been described, the present invention is not limited thereto. The first surface 615 and the second surface 613 of the molten sheet 150 may be flattened and the molten sheet 150 may be set to a desired thickness by injecting an air knife and injecting high-pressure and high-speed air. .

  The noise suppression layer forming unit 900 includes a dispenser 950 as a liquid material supply unit in the present embodiment. The dispenser 950 is disposed on the upper stream side of the noise suppression layer forming unit 900 located downstream of the sheet forming unit 800 (the post-stage cooling roll 130), facing the peeling layer 1. . Then, a liquid noise suppression layer forming material (liquid material) in the form of liquid is dropped (supplied) to the peeling layer 1 from the dispenser 950 as a droplet 32, whereby the liquid film 31 is formed on the peeling layer 1. .

  As a noise suppression layer formation material (liquid material), what melt | dissolved the constituent material of the noise suppression layer 3 mentioned above in the solvent is mentioned, for example. That is, one containing a particulate conductive material, a binder resin, and a solvent can be mentioned.

  The solvent is not particularly limited, but, for example, mesitylene, decalin, mineral spirits, hydrocarbons such as toluene, xylene, tetradecane and hexanes, alcohols such as isopropyl alcohol, propylene glycol monomethyl ether, dipropylene glycol methyl Ether, Ethers such as diethylene glycol monoethyl ether, ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, γ-butyrolactone Esters / lactones, cyclopentanone, cyclohexanone, methyl isobutyl ketone, methyl ethyl ketone, 2-heptanone etc. And amides / lactams such as N-methyl-2-pyrrolidone, and one or more of them may be used in combination, among which methyl ethyl ketone, toluene, ethyl acetate, isopropyl alcohol and the like. It is preferable that it is at least one of tetradecane and hexane.

  The method for supplying the liquid material onto the release layer 1 is not particularly limited, and various application methods can be used in addition to the method for supplying the droplets 32 using the above-described dispenser 950. As the coating method, for example, casting method, comma coating method, microgravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, slot die method, screen printing method, flexo Printing methods, offset printing methods, etc. may be mentioned.

  The noise suppression layer forming unit 900 also has a pair of hot air supply units 960 as a drying unit. These hot air supply units 960 are located on the most downstream side of the noise suppression layer forming unit 900 located on the downstream side of the sheet forming unit 800 (second-stage cooling roll 130), facing the peeling layer 1 and above and below. It is arranged one by one. Each hot air supply unit 960 incorporates a heater (not shown) formed of a heating wire, and the hot air heated by the heater passes through a plurality of hot air supply holes (not shown). The liquid coating 31 formed on the release layer 1 is sprayed. Thereby, the liquid film 31 (the noise suppression layer forming material) is dried, and the electromagnetic wave shielding film 300 in which the noise suppression layer 3 is formed on the peeling layer 1 is obtained.

  The film 300 for electromagnetic wave shielding is manufactured from the manufacturing method of the film for electromagnetic wave shieldings using the film manufacturing apparatus 500 for electromagnetic wave shieldings as described above.

  The method of manufacturing the film 300 for shielding an electromagnetic wave according to the present invention includes the steps of preparing the release layer 1 (base material layer) and supplying a liquid material for forming the noise suppression layer 3 onto the release layer 1; Drying the liquid material to form the noise suppression layer 3 on the release layer 1 to obtain the film 300 for shielding an electromagnetic wave, and in the present embodiment, the preparation of the release layer 1 forms a strip The extrusion step of extruding molten sheet 150 in a molten or softened state as a sheet, a forming step of forming release layer 1 by flattening first surface 615 and second surface 613 of molten sheet 150, and The cooling process is performed by cooling the molten sheet 150 (peeling layer 1) in the molten or softened state.

Hereinafter, each process for manufacturing the film 300 for electromagnetic wave shielding is explained in full detail.
[A] First, the molten sheet 150 in a molten or softened state, which is formed into a belt-like sheet, is extruded (extrusion process).

  In this extrusion process, the constituent materials of the first layer 11, the second layer 12, and the third layer 13 constituting the above-described release layer 1 are accommodated in the extruders 410, 420, and 430, respectively, and are in a molten state. Alternatively, each component material in a softened state is pushed out from the opening 601 of the T-die 600 through the distributor 440 and the pipe 412. Thus, the constituent materials of the first layer 11, the second layer 12 and the third layer 13 are laminated in this order, and a molten sheet in a molten or softened state is formed into a strip-like sheet. 150 are sent out continuously.

  [B] Next, the first surface 615 and the second surface 613 of the molten sheet 150 are flattened, and the release layer 1 in the molten or softened state is set by setting the molten sheet 150 to a predetermined thickness. Molding (molding process).

  This forming process is performed by supplying the molten sheet 150 between the touch roll 110 and the cooling roll 120.

  Under the present circumstances, the outer peripheral surface of the cooling roll 120 and the outer peripheral surface of the touch roll 110 each have comprised the roll shape which has smoothness. Therefore, each of the first surface 615 and the second surface 613 of the molten sheet 150 is flattened by being pressed against the smooth outer peripheral surface.

  Further, the separation distance between the outer peripheral surface of the cooling roll 120 and the outer peripheral surface of the touch roll 110 is set to the thickness of the peeling layer 1 to be formed, and this separation distance is set appropriately to a predetermined size. The melt sheet 150 (peeling layer 1) can be obtained.

  Thus, in the present step [B], the cooling roll 120 and the touch roll 110 are used to planarize the first surface 615 and the second surface 613, respectively, and to set the thickness of the molten sheet 150. Be

  [C] Next, the peeling layer 1 (molten sheet 150) in the molten or softened state in which the first surface 615 and the second surface 613 are flattened is cooled (cooling step).

  Thereby, the peeling layer 1 comprised by the laminated body on which the 1st layer 11, the 2nd layer 12, and the 3rd layer 13 were laminated | stacked in this order is formed.

  This cooling process is performed by supplying the molten sheet 150 between the cooling roll 120 and the post-stage cooling roll 130.

Here, in the present embodiment, since both of the cooling roll 120 and the post-stage cooling roll 130 are provided with the cooling means, the contact (contact) of the molten sheet 150 with the respective rolls 120 and 130 as described above. , And the first surface 615 and the second surface 613 are flattened. As a result, the first surface 615 and the second surface 613 are planarized to obtain the release layer 1.
The release layer 1 is prepared by passing through the above steps.

[D] Next, a liquid material for forming the noise suppression layer 3 is supplied onto the release layer 1 (supply step).
Thereby, a liquid film 31 composed of a liquid material is formed on the peeling layer 1.

  More specifically, a sheet of the noise suppression layer forming material in liquid form is formed as a droplet 32 from a dispenser 950 located on the most upstream side of the noise suppression layer formation portion 900 located on the downstream side of the sheet molding portion 800. The liquid film 31 is formed on the release layer 1 by dropping (supplying) the release layer 1 formed by the portion 800.

[E] Next, the liquid material supplied onto the release layer 1 is dried (drying step).
Thereby, the noise suppression layer 3 is formed on the peeling layer 1, and the film 300 for electromagnetic wave shielding is obtained.

  More specifically, the hot air supply unit 960 located on the most downstream side of the noise suppression layer forming unit 900 located on the downstream side of the sheet forming unit 800 (second-stage cooling roll 130) Let dry). Thereby, the noise suppression layer 3 is formed on the peeling layer 1, and the film 300 for electromagnetic wave shielding is obtained.

  The temperature of the liquid film 31 when drying the liquid film 31 is preferably 20 ° C. or more and 170 ° C. or less, and more preferably 30 ° C. or more and 150 ° C. or less.

  Through the steps as described above, it is possible to continuously obtain an electromagnetic wave shielding film 300 in which the noise suppression layer 3 and the peeling layer 1 are laminated in this order.

  As described above, the peeling strengths A and B can be easily formed by forming the noise suppression layer 3 on the prepared peeling layer 1 using a liquid phase film forming method having a supplying step and a drying step. It is possible to satisfy the relation 1 <A / B. Therefore, after the covering of the noise suppression layer 3 with respect to the electronic component sealing body 290, the peeling layer 1 can be easily peeled from the noise suppression layer 3.

  The semiconductor device 20 manufactured by applying the film for shielding an electromagnetic wave manufactured by the method for manufacturing a film for shielding an electromagnetic wave according to the present invention is, for example, a mobile phone, a medical device, a digital camera, a video camera, a car navigation, a personal It can be widely used in computers, game machines, liquid crystal televisions, liquid crystal displays, organic electroluminescence displays, printers and the like.

  As mentioned above, although the manufacturing method of the film for electromagnetic wave shields of this invention was demonstrated, this invention is not limited to these.

  For example, in the above embodiment, the case of using the electromagnetic wave shielding film manufactured by the method of manufacturing an electromagnetic wave shielding film of the present invention for manufacturing the semiconductor device 20 having the above-described structure has been described. For example, the film for shielding electromagnetic waves can also be used in the manufacture of an electronic device or the like comprising an electronic component such as a CSP (Chip Size Package) type semiconductor device, a capacitor, or a coil alone.

  Moreover, although the said embodiment demonstrated the case where the film 300 for electromagnetic wave shields of this invention was comprised by the laminated body of the peeling layer 1 (base material layer) and the noise suppression layer 3, it is not limited to this. The electromagnetic wave shielding film 300 may be provided with another layer different from the peeling layer 1 (base material layer) and the noise suppression layer 3.

  Furthermore, although the noise suppression layer 3 is provided also on the side surface of the interposer 25 in the embodiment, the present invention is not limited to this, as long as the noise suppression layer 3 is provided at least on the upper surface of the sealing portion 27 and the side surface of the sealing portion 27 The formation of the noise suppression layer 3 on the side surface of the interposer 25 may be omitted.

  Furthermore, one or more steps for any purpose may be added to the method of manufacturing the electronic component package and the method of manufacturing the electronic device.

  Hereinafter, the present invention will be described in detail based on examples, but the present invention is not limited thereto.

1. Production of film for electromagnetic shielding (Example 1A)
In order to obtain a film for electromagnetic wave shielding, polymethylpentene (manufactured by Mitsui Chemicals, Inc., trade name: TPX DX231) was prepared as a resin material for forming the first layer. As a resin material for forming the third layer, polymethylpentene (manufactured by Mitsui Chemicals, Inc., trade name: TPX DX231) was prepared. In addition, as a resin material for forming the second layer, 35 wt% of ethylene-methyl acrylate copolymer (Mitsui Dupont Polychemicals Co., Ltd., trade name: Nucrel AN4214C), polypropylene (Prime Polymer Co., Ltd., trade name) A mixture containing 30 wt% of E-203GP) and 35 wt% of polymethylpentene (manufactured by Mitsui Chemicals, Inc., trade name: TPX DX231) was prepared.

  Furthermore, as a resin material (liquid material) for forming a noise suppression layer, silver particles (manufactured by Fukuda Metal Foil & Powder Industry Co., Ltd., trade name: Ag-XF301) are included as metal material in particulate form, and epoxy as binder resin A resin material containing a resin (manufactured by DIC, trade name: EPICRON N-670) and further containing methyl ethyl ketone as a solvent was prepared.

  Then, using the resin material for forming the first layer described above, the resin material for forming the second layer, and the resin material for forming the third layer, an electromagnetic shielding film A release layer formed into a film was obtained by the release layer forming unit 780 included in the manufacturing apparatus 500. After that, a noise suppression layer is formed by applying a resin material (liquid material) for forming the noise suppression layer to the peeling layer by the noise suppression layer forming unit 900 included in the film manufacturing apparatus for electromagnetic shielding 500 and drying it. The film for electromagnetic wave shielding was produced.

  In addition, the average thickness of the whole film for electromagnetic wave shielding of Example 1A is 240 micrometers, the average thickness of a 1st layer is 20 micrometers, the average thickness of a 3rd layer is 20 micrometers, and the average of a 2nd layer The thickness was 180 μm, and the average thickness of the noise suppression layer was 20 μm.

  The storage elastic modulus at 100 ° C. of the first layer, the second layer and the third layer in the film for electromagnetic wave shielding of Example 1A is 2.0E + 08Pa, 5.0E + 07Pa and 2.0E + 08Pa, respectively. The

  Furthermore, the storage elastic modulus at 100 ° C. of the release layer and the noise suppression layer was 1.0E + 08Pa and 1.0E + 04Pa, respectively.

2. Evaluation The following evaluation was performed about the film for electromagnetic wave shields produced in Example 1A.

<Peel strength A>
The noise suppression layer having a width of 25 mm was formed using the resin material for forming the noise suppression layer prepared when producing the film for electromagnetic wave shielding of Example 1A. Then, the noise suppression layer is attached at 100 ° C. on a plate-like sealing portion made of an epoxy resin composition ("SX B680" manufactured by Sumitomo Bakelite Co., Ltd.) mainly composed of an epoxy resin. Then, according to JIS G 3469, hold the end of the noise suppression layer, peel strength A measured when peeled at a speed of 300 mm / min in the direction of 90 ° at 25 ° C, tensile tester (A -It measured using and day company make and "TENSILON RTG-1310"). The measurement results are shown in Table 1.

<Peel strength B>
The noise suppression layer having a width of 25 mm was formed using the resin material for forming the noise suppression layer prepared when producing the film for electromagnetic wave shielding of Example 1A. Then, these noise suppression layers are attached at 100 ° C. on a plate-like peeling layer made of polymethylpentene (“TPX DX 231”, manufactured by Mitsui Chemicals, Inc.), and then in accordance with JIS G 3469. Peel strength B, which is measured when peeled at a speed of 300 mm / min in the direction of 90 ° at 25 ° C., with one end of the noise suppression layer, using a tensile tester (A & D Inc., “ It measured using TENSILON RTG-1310 "). The measurement results are shown in Table 1.

<Peelability of Peeling Layer from Semiconductor Encapsulated Coupling>
The releasability of the release layer from the semiconductor encapsulation assembly was evaluated as follows.

  That is, first, on a FR4 substrate (a substrate formed by sealing a cloth of glass fiber with a cured product of epoxy resin), a Si substrate (pseudo semiconductor element) 10 mm long × 10 mm wide × 0.7 mm thick After mounting, the Si substrate was subjected to heating and compression treatment under the conditions of 190 ° C./150 N / 20 sec.

  Next, after supplying the granular epoxy resin composition (Sumitomo Bakelite Co., Ltd. “XF8680”) on the FR4 substrate on which the Si substrate is mounted, the Si substrate is sealed by the sealing portion by compression molding. A sealed semiconductor encapsulation was formed.

The condition for compression molding was 175 ° C./5 MPa / 5 min.
Then, after curing the sealing portion under the condition of 220 ° C./1 hr, using a dicing saw, a groove with a groove width of 0.2 mm, a groove interval of 10 mm, and a groove depth of 1.0 mm with the sealing portion By forming in the shape of a lattice, the semiconductor sealing connection body in which the groove was formed was obtained.

  Next, the film for an electromagnetic wave shield of Example 1A is disposed on the semiconductor sealing connection in which a groove is formed, and then, using a vacuum pressure type laminator, the film for an electromagnetic wave shield in a vacuum atmosphere The electromagnetic shielding film was attached to the semiconductor sealing assembly by pressurizing under the conditions of a pressure of 2 MPa and a temperature of 170 ° C. for 240 seconds so that the electronic component sealing body approaches each other.

  Next, the peeling layer is peeled from the film for an electromagnetic wave shield attached to the semiconductor sealing assembly by holding one end of the peeling layer, and the ease of peeling of the peeling layer in this case is based on the evaluation criteria shown below. evaluated. The evaluation results are shown in Table 1.

[Evaluation criteria]
:: There is no resin residue derived from the noise suppression layer in the peeling layer and can be peeled off easily ○: There is no resin residue originating from the noise suppression layer in the peeling layer, but peeling is slightly heavy. ×: To the noise suppression layer in the peeling layer The resin residue that originates is generated

  As shown in Table 1, in Example 1A, the peel strengths A and B satisfy the relationship of 1 <A / B, whereby the peeling film from the electromagnetic wave shielding film attached to the semiconductor sealing connection. The peeling layer can be easily peeled without generating the resin residue derived from the noise suppressing layer, and the noise suppressing layer can be formed on the electronic component package.

DESCRIPTION OF SYMBOLS 1 peeling layer 2 adhesive layer 3 noise suppression layer 4 base material 11 1st layer 12 2nd layer 13 3rd layer 20 semiconductor device 21 bump 22 coating part 23 wiring 25 interposer 25 'sheet material 26 semiconductor element 27 sealing Stop part 28 electronic element 31 liquid film 32 droplet 62 concave part 100 adhesive tape 110 touch roll 120 cooling roll 130 post-stage cooling roll 150 molten sheet 221 opening 270 electronic component sealing body 290 electronic component sealing body 300 film for electromagnetic wave shield 410 extruder 411 molten resin discharge unit 412 piping 420 extruder 421 molten resin discharge unit 430 extruder 431 molten resin discharge unit 440 distribution machine 500 film manufacturing apparatus for electromagnetic shielding 600 T die 601 opening 613 second surface 615 first surface 700 sheet supply unit 780 Peeling layer forming part 800 Sheet forming part 900 Noise suppression layer forming part 950 Dispenser 960 Hot air supply part

Claims (9)

A noise suppression layer covering the upper surface and the side surface of the sealing portion is formed on an electronic component sealing body having a substrate, an electronic component disposed on the substrate, and a sealing portion sealing the electronic component. A method for producing an electromagnetic wave shielding film, comprising: a base layer; and the noise suppression layer laminated on one side of the base layer.
Supplying the liquid material for forming the base layer and forming the noise suppression layer on the base layer;
And d) drying the supplied liquid material to form the noise suppression layer on the base layer, thereby obtaining the film for shielding an electromagnetic wave.   The method according to claim 1, wherein the liquid material contains a particulate conductive material, a binder resin, and a solvent.   The method according to claim 2, wherein the conductive material is at least one of a metal material, a metal oxide material, a conductive polymer material, and a conductive ceramic material.   The method according to claim 2 or 3, wherein the binder resin is at least one of an epoxy resin, a urethane resin, an olefin resin, a polyester resin, a polyamide resin, and a silicone resin.   The method for manufacturing a film for electromagnetic wave shielding according to any one of claims 2 to 4, wherein the solvent is at least one of methyl ethyl ketone, toluene, ethyl acetate, isopropyl alcohol, tetradecane and hexane.   In the supplying step, a laminate having a three-layer structure in which a first layer, a second layer, and a third layer are laminated in this order is prepared as the base material layer, and then, The method according to any one of claims 1 to 5, wherein the liquid material is supplied to the third layer.   The manufacturing method of the film for electromagnetic wave shields of Claim 6 which obtains the said base material layer comprised by the said laminated body using the co-extrusion method in the said supply process.   The method according to claim 6 or 7, wherein the first layer and the third layer each have a storage elastic modulus at 100 ° C of 1.0E + 05 Pa or more and 1.0E + 11 Pa or less.   The method for manufacturing a film for an electromagnetic wave shielding according to any one of claims 6 to 8, wherein the second layer has a storage elastic modulus at 100 ° C of 1.0E + 04Pa or more and 1.0E + 10Pa or less.

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