JP3185933B2 - Forming resist layer for processing - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a patterned processing resist layer on a surface or a layer to be processed.

[0002]

2. Description of the Related Art Conventionally, on a layer to be processed formed on a substrate having a mark forming region in which a mark is formed by unevenness, in a region other than the region on the mark forming region,
Forming a first resist layer made of a cross-linked organic polymer material, and applying light, X-rays or electron beams on the first resist layer and a region on the mark forming region of the layer to be processed; Forming a second resist layer made of a photosensitive polymer material having sensitivity to the second resist layer, and irradiating the second resist layer with the light, X-rays or electron beams, and subsequently developing the second resist layer. Forming a patterned third resist layer on the first resist layer from the resist layer, and performing reactive ion etching on the first resist layer using the third resist layer as a mask; Forming a patterned fourth resist layer from the first resist layer as a processing resist layer (hereinafter referred to as a conventional first processing method). For Referred to as a strike layer forming method) has been proposed.

[0003] Conventionally, on a layer to be processed formed on a substrate having a mark forming region in which a mark is formed by irregularities, a region other than the region on the mark forming region is provided. Forming a first resist layer made of a cross-linked organic polymer material; and forming the first resist layer on the first resist layer and an area on the mark forming area of the processing target layer. And a second resist layer made of a photosensitive polymer material having sensitivity to light, X-rays or electron beams is formed by laminating them in this order. A step of irradiating the second resist layer with the light, X-rays, or electron beams, and a subsequent development treatment, thereby forming a second patterned resist on the first resist layer from the second resist layer. Form 3 resist layers A step of, by a reactive ion etching process using a mask the third resist layer to the mask material layer, pattern from the mask material layer -
Forming a patterned mask layer from the first resist layer by performing a reactive ion etching process on the first resist layer using the mask layer as a mask. A method of forming a processing resist layer having a step of forming a resist layer as a processing resist layer (hereinafter, referred to as a second conventional processing resist layer forming method) has also been proposed.

According to the above-described first and second methods of forming a resist layer for processing, the first resist layer is formed thick, so that even if the upper surface of the layer to be processed has irregularities, The first resist layer can be formed as having a flat top surface, so that the second resist layer can be formed to have a uniform thin thickness at each portion, and the second resist layer can be formed at a uniform thickness. The third resist layer and the mask layer can be formed with high precision and fineness because each part can be formed to have a uniform thin thickness. Therefore, the third resist layer and the mask layer can be formed as patterned patterned resist layers for processing. The fourth resist layer can be formed with high accuracy and fineness.

For this reason, a fine processing is performed on the surface to be processed by using the fourth resist layer as the processing resist layer formed by the above-described conventional first and second processing resist layer forming methods. , Can be applied with high precision.

In the above-described conventional first and second processing resist layer forming methods, in the step of forming a patterned third resist layer from the second resist layer, the first step is performed. Since the resist layer does not extend over the region on the mark forming region of the substrate to be processed, the patterned third resist layer is formed on the mark forming region.
Using the pattern, the pattern positioned at the expected position,
It can be easily formed, and thus the patterned fourth resist layer as a processing resist layer can be easily formed in a pattern positioned at a predetermined position.

[0007]

In the above-described first and second conventional resist layer forming methods, heat treatment is performed to form a cross-linked first resist layer. Thus, a resist layer made of an organic polymer material which is crosslinked is formed, and then heat treatment is performed on the resist layer, and the heat treatment requires a high temperature of 200 ° C. or more.

For this reason, in the case of the above-described conventional first and second processing resist layer forming methods, in the step of forming the cross-linked first resist layer, grains, hillocks, There is a disadvantage that voids and the like may occur.

Thus, the present invention is free of the above-mentioned disadvantages,
It is intended to propose a new method of forming a resist layer for processing.

[0010]

Means for Solving the Problems The method for forming a working resist layer according to the first invention and the second invention of the present application comprises:
As in the case of the conventional first processing resist layer forming method,
An organic polymer material cross-linked on a layer to be processed formed on a substrate having a mark forming region forming a mark due to unevenness in a region other than the region on the mark forming region. Forming a first resist layer comprising: a first resist layer and a photosensitive layer having sensitivity to light, X-rays, or electron beams on a region on the mark forming region of the first resist layer and the layer to be processed; Forming a second resist layer made of a molecular material;
The second resist layer is irradiated with the light, X-rays, or electron beams, and subsequently developed to form a patterned third resist on the first resist layer from the second resist layer. Forming a layer;
Forming a patterned fourth resist layer from the first resist layer as a processing resist layer by reactive ion etching with respect to the first resist layer using the third resist layer as a mask. And

However, in the method for forming a processing resist layer according to the first invention of the present application, in such a method for forming a processing resist layer, when forming the first resist layer, an optical signal is formed on the layer to be processed. Forming a fifth resist layer made of an organic polymer material which is crosslinked by being irradiated with X-rays or electron beams, and then forming a fifth resist layer other than an area on the mark forming area with respect to the fifth resist layer. The region is subjected to the above-mentioned light, X-ray or electron beam irradiation treatment and subsequent development treatment.

Further, in the method for forming a processing resist layer according to the second invention of the present application, in the method for forming a processing resist layer described above, when forming the first resist layer, light, light, A fifth resist layer made of an organic polymer material that is cross-linked by being irradiated with X-rays or electron beams and then subjected to a heat treatment is formed, and then the above-mentioned mark on the fifth resist layer is formed. Forming a sixth resist layer irradiated with the light, X-ray or electron beam from the fifth resist layer by irradiation with the light, X-ray or electron beam in a region other than the region on the formation region; Next, the sixth resist layer is subjected to heat treatment and subsequent development processing.

The process resist layer forming method according to the third invention of the present application is similar to the above-mentioned conventional second process resist layer forming method, in that a mark forming region in which marks are formed by unevenness is formed. Forming a first resist layer made of a cross-linked organic polymer material in a region other than the region on the mark forming region on a layer to be processed formed on a substrate having A mask material layer that is resistant to a subsequent reactive ion etching process on the first resist layer, on a region of the first resist layer and the layer to be processed on the mark forming region; Forming a second resist layer made of a photosensitive polymer material having sensitivity to an electron beam by laminating them in that order, and irradiating the second resist layer with the light, X-rays or electron beams; By subsequent development processing, The second resist layer, pattern in the first resist layer - forming a third resist layer which is down of, the third with respect to the mask material layer
Forming a patterned mask layer from the mask material layer by reactive ion etching using the first resist layer as a mask; and reactive ion etching using the mask layer as a mask with respect to the first resist layer. Forming a patterned fourth resist layer from the first resist layer by etching as a processing resist layer.

However, in the method for forming a resist layer for processing according to the third invention of the present application, in such a method for forming a resist layer for processing, when forming the first resist layer, an optical signal is formed on the layer to be processed. Forming a fifth resist layer made of an organic polymer material which is crosslinked by being irradiated with X-rays or electron beams, and then forming a fifth resist layer other than an area on the mark forming area with respect to the fifth resist layer. The region is subjected to the above-mentioned light, X-ray or electron beam irradiation treatment and subsequent development treatment.

[0015]

[0016]

According to the method for forming a processing resist layer according to the first and third aspects of the present invention, the first resist layer is formed by a method similar to the conventional method for forming a processing resist layer. Even without heat treatment at a high temperature, it can be obtained as a sufficiently cross-linked material, and thus does not have the drawbacks of the above-described conventional first and second processing resist layer forming methods.

Further, according to the method for forming a resist layer for processing according to the second invention of the present application , even if a heat treatment is involved in forming the first resist layer, the heat treatment is carried out in the same manner as described above. Since the method does not require a high temperature as in the case of the conventional first and second processing resist layer forming methods, the first and third processing resist layer forming methods of the present invention do not require a high temperature. Similarly to the above, it does not have the drawbacks of the above-described conventional first and second processing resist layer forming methods.

[0018]

Embodiment 1 Next, a first embodiment of the method for forming a processing resist layer according to the present invention will be described with reference to FIGS.

On a substrate 1 made of, for example, a semiconductor substrate having a mark forming region on the surface of which an uneven mark 31 is formed, a processing layer 2 made of, for example, a layer mainly composed of Al is formed.
As a layer to be processed by using the processing resist layer formed by the processing resist layer forming method according to the present invention (FIG. 1A), the layer to be processed is formed on the upper surface as the processing surface of the layer 2 to be processed. For example, a resist layer 3 made of an organic polymer material that is cross-linked by being irradiated with light, X-rays or an electron beam (made by Tosoh Corporation) made of chloromethylated polystyrene, for example, is applied and formed by spin coating. Next, heat treatment is performed at a temperature of about 100 ° C. (FIG. 1B).

Next, with respect to the resist layer 3, an area on the mark forming area where the mark 31 of the
2 or the like, the region other than the region on the mark forming region of the substrate 1 is irradiated with light, X-rays (including laser light) or electron beams 9 (FIG. 1C), and then developed. By applying, the cross-linked resist layer 4
On the layer to be processed 2, it is formed in a region other than the region on the mark forming region where the mark 31 of the substrate 1 is formed (FIG. 1D).

Next, for example, SP containing silicon
The resist layer 5 made of a photosensitive polymer material having sensitivity to light, X-rays or electron beams made of Fuji Hunt Co., Ltd. 2 is applied to a region of the work layer 2 where the resist layer 4 is not formed and the resist layer 4 Continuously extending upward, for example, from 0.2 μm
It is coated and formed to a thin thickness of 0.5 μm.
A heat treatment is performed at a temperature of 0 ° C. (FIG. 1E).

Next, light such as a g-line, an i-line of a mercury lamp, a KrF excimer laser or the like is applied to the resist layer 5.
Irradiation treatment with a desired pattern of X-rays or electron beams 6 (FIG. 2F), followed by development treatment,
A patterned resist layer 7 is formed on the cross-linked resist layer 4 (FIG. 2G). In FIG. 2F, reference numeral 5a denotes a region irradiated with light, X-rays, or electron beams 6.

Next, the resist layer 7 with respect to the resist layer 4
A patterned resist layer 8 is formed as a processing resist layer from the resist layer 4 by, for example, a reactive ion etching process using oxygen ions with the mask as a mask (FIG. 2H).

Next, the resist layer 7 is formed, for example, in Japanese Patent Application No. Hei.
The resist layer 8 is removed from the resist layer 8 using a resist stripping solution containing an acidic organic solvent, an aqueous alkali solution, a surfactant and the like as shown in No. 1306 (FIG. 2I).

The above is the first embodiment of the method for forming a working resist layer according to the present invention. According to the first embodiment of the processing resist layer forming method according to the present invention, similarly to the case of the conventional first processing resist layer forming method, the resist layer 3 and thus the resist layer 4 are formed thick. This allows the resist layer 4 to be formed as having a flat upper surface even if the upper surface of the layer to be processed 2 has irregularities. In addition, since the resist layer 5 can be formed to have a uniform thin thickness at each portion, the resist layer 7 can be formed with high precision and fineness. The resist layer 8 serving as a working resist layer can be formed with high precision and fineness.

Therefore, in the case of the process resist layer forming method according to the present invention shown in FIGS. 1 and 2, similarly to the case of the above-mentioned first conventional process resist layer forming method, the formed process resist layer is formed. By using the resist layer 8 as a resist layer, fine processing can be performed on the processing target layer 2 with high accuracy.

In the step of forming the patterned resist layer 7 from the resist layer 5 in the same manner as in the case of the above-mentioned first conventional resist layer forming method, the resist layer 4 is processed. Since it does not extend over the region on the mark forming region forming the mark 31 of the substrate 1 on the layer, the pattern is formed from the resist layer 5 using the mark 31.
And X in the step of forming the resist layer 5
The irradiation process of the electron beam or the electron beam can be easily performed with the pattern positioned at the predetermined position. Therefore, the patterned resist layer 5 can be removed from the pattern positioned at the predetermined position. It can be easily formed.

However, in the case of the first embodiment of the processing resist layer forming method according to the present invention shown in FIGS. 1 and 2,
The cross-linked resist layer 4 is cross-linked by irradiating light, X-rays, or electron beams on the processing target layer 2 in a region other than the region on the mark forming region forming the mark 31 of the substrate 1. A resist layer 3 made of an organic polymer material to be formed is formed. Then, light and X-rays are applied to the resist layer 3 in a region excluding a region on a mark forming region of the substrate 1 where the mark 31 is formed. Alternatively, the resist layer 3 is irradiated with an electron beam and then subjected to a developing process.
Therefore, heat treatment at a high temperature as in the above-described conventional first processing resist layer forming method is not required, and therefore, the resist layer 8 as the processing resist layer is formed on the layer to be processed. Grain, Hill Rock,
It could be formed without any voids.

Further, a step of forming a resist layer 5 (FIG. 1)
In D), mutual dissolution did not occur between the resist layer 5 and the resist layer 4. Further, in the step of removing the resist layer 7 from the resist layer 8,
Did not dissolve, swell, or peel off from the layer to be processed 2.

Embodiment 2

Next, a second embodiment of the method for forming a processing resist layer according to the present invention will be described with reference to FIGS.

In FIGS. 3 and 4, parts corresponding to those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description is omitted.

The method for forming a processing resist layer according to the present invention shown in FIGS. 3 and 4 is similar to that of the first embodiment.
1. On a substrate 1 having a mark forming area forming 1
Assuming that the processed layer 2 similar to that of the first embodiment is formed in the same manner as that of the first embodiment (FIG. 3A), for example, THMRIN1 is formed on the upper surface of the processed layer 2 as the processed surface.
00 (manufactured by Tokyo Ohka Co., Ltd.), SAL601 (manufactured by Shipley), etc., a negative type made of an organic polymer material that generates an acid upon being irradiated with light, X-rays or electron beams, and crosslinks using the acid as a catalyst. The resist layer 3 ′ made of an organic polymer material which is irradiated with light, X-ray or electron beam and then cross-linked by heat treatment is applied to the resist layer 3 of Example 1. Is applied and formed in the same manner as in the case of forming, and then a heat treatment is performed at a temperature of about 90 ° C. (FIG. 3B).

Next, a region other than the region on the mark forming region of the substrate 1 is formed by covering the region on the mark forming region forming the mark 31 of the substrate 1 with the shielding plate 32 on the resist layer 3 '. In the above, irradiation treatment with light, X-rays or electron beams 9 is performed, whereby the resist layer 3 ′
A resist layer 3 ″ irradiated with light, X-rays or electron beams 9 is formed (FIG. 3C-1).

Next, at 110 ° C.
By performing a heat treatment at a temperature of 150 ° C., a crosslinked resist layer 4 is formed from the resist layer 3 ″ similarly to the resist layer 4 of the first embodiment (FIG. 3C-2).

Although not described in detail below, as shown in FIGS. 3D, 4E, F, G, H and I, FIG.
D, a patterned resist layer 8 is formed from the resist layer 4 as a processing resist layer by performing the same sequential steps as described above with reference to FIGS. 2E, F, G, H and I.

The above is the second embodiment of the method for forming a working resist layer according to the present invention. Also in the case of the second embodiment of the processing resist layer forming method according to the present invention, detailed description is omitted, but the resist layer 8 is formed with high precision and fineness as in the case of the first embodiment. While being able to
The cross-linked resist layer 4 is irradiated with light, X-rays or electron beams on the processing target layer 2 and then subjected to a heat treatment to form a resist layer 3 ′ made of an organic polymer material which is cross-linked.
Then, the resist layer 3 ′ is irradiated with light, X-rays or electron beams in a region other than the region on the mark forming region where the mark of the substrate 1 is formed on the resist layer 3 ′.
A resist layer 3 ″ irradiated with light, X-rays or electron beams is formed from the resist layer 3 ′, and then the resist layer 3 ″ is formed.
Since it is formed by performing a heat treatment and a subsequent development treatment, the heat treatment at a high temperature as in the above-described conventional first processing resist layer forming method is not required even if a heat treatment is involved. As in the case of Example 1, the resist layer 8 as the processing resist layer could be formed on the surface to be processed of the layer to be processed 2 without involving grains, hillocks, voids and the like.

[0037]

Embodiment 3 Next, a third embodiment of the method for forming a processing resist layer according to the present invention will be described with reference to FIGS.

In FIGS. 5 to 7, parts corresponding to those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description is omitted. Figure 5
Although the detailed description of the process resist layer forming method according to the present invention shown in FIG. 7 is omitted, as shown in FIGS. 5A to 5D, the same sequential steps as shown in FIGS. Then, a cross-linked resist layer 4 is formed, and then, for example, a silicon polymer SIR (Toray Silicone Co., Ltd.) is formed on the region of the processing target layer 2 where the resist layer is not formed and on the resist layer 4.
A mask material layer 11 having a resistance by a subsequent reactive ion etching process of 0.2 μm to 0.1 μm.
The coating is formed by continuously extending to a thickness of 5 μm, and then 100
A heat treatment is performed at a temperature of from 150C to 150C (Fig. 6E).

Next, a resist layer 5 similar to that in the first embodiment is formed on the mask material layer 11 in the same manner (FIG. 6F). A patterned resist layer 7 is formed from the resist layer 5 by irradiation treatment with light, X-rays or electron beams 9 (FIG. 6G) and subsequent development treatment (FIG. 7H).

Next, the mask material layer 1 is subjected to a reactive ion etching process using, for example, a fluorocarbon-based gas with the resist layer 7 for the mask material layer 11 as a mask.
From 1, a patterned mask layer 12 is formed (FIG. 7I).

Next, the mask layer 12 for the resist layer 4
The same patterned resist layer 8 as in the first embodiment is formed from the resist layer 4 as a processing resist layer by the same reactive ion etching as in the first embodiment using the mask as a mask. (FIG. 7J). It should be noted that this and
At this time , the resist layer 7 is removed from above the mask layer 12.

Next, the mask layer 12 is removed from above the resist layer 8 using the same resist stripping solution as used in the first embodiment from which the resist layer 7 was removed.

The above is the third embodiment of the method for forming a working resist layer according to the present invention. Although the detailed description of the processing resist layer forming method according to the present invention is omitted, the same operation and effect as in the case of Example 1 were obtained.

[0044]

[0045]

[0046]

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing sequential steps in a first embodiment of a method of forming a processing resist layer according to the present invention.

FIG. 2 is a schematic cross-sectional view showing a first embodiment of the processing resist layer forming method according to the present invention, in a sequential step following the sequential step shown in FIG. 1;

FIG. 3 is a schematic cross-sectional view showing sequential steps in a second embodiment of the method for forming a working resist layer according to the present invention.

FIG. 4 is a schematic sectional view showing a second embodiment of the method for forming a working resist layer according to the present invention, which is a sequential step following the sequential step shown in FIG. 3;

FIG. 5 is a schematic sectional view showing sequential steps in a third embodiment of the method for forming a working resist layer according to the present invention.

FIG. 6 is a schematic cross-sectional view showing a third embodiment of the method for forming a working resist layer according to the present invention, which is a sequential step following the sequential step shown in FIG.

FIG. 7 is a schematic sectional view showing a third embodiment of the method for forming a working resist layer according to the present invention, which is a sequential step following the sequential step shown in FIG. 6;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Processed layer 3, 3 ', 3 "Resist layer 4, 5, 6 Resist layer 7, 8 Resist layer 9 Light, X-ray or electron beam 11 Mask material layer 12 Mask layer 31 Mark

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-64-59918 (JP, A) JP-A-62-205332 (JP, A) JP-A-56-137634 (JP, A) JP-A-63-1988 289933 (JP, A) JP-A-2-46463 (JP, A) JP-A-60-262151 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G03F 7/26 H01L 21 / 027

Claims (4)

(57) [Claims] 1. A cross-linking process is performed on a layer to be processed formed on a substrate having a mark forming region forming a mark due to unevenness in a region other than the region on the mark forming region. Forming a first resist layer made of an organic polymer material, and sensitizing light, X-rays, or electron beams on the first resist layer and a region of the layer to be processed on the mark forming region. Forming a second resist layer made of a photosensitive polymer material having the following formula: irradiating the second resist layer with the light, X-rays or electron beams, and subsequently developing the second resist layer Forming a patterned third resist layer on the first resist layer, and a reactive ion etching process on the first resist layer using the third resist layer as a mask. , The first Forming a patterned fourth resist layer from the distant layer as a processing resist layer. The method according to claim 1, further comprising: Forming on the layer a fifth resist layer made of an organic polymer material which is cross-linked by being irradiated with light, X-rays or electron beams, and then forming the mark forming region for the fifth resist layer; A method of forming a processing resist layer, which comprises performing the light, X-ray or electron beam irradiation treatment in a region other than the upper region, and a subsequent development treatment. 2. The method according to claim 1, wherein a region other than the region on the mark forming region is cross-linked on a layer to be processed formed on a substrate having a mark forming region forming a mark by unevenness. Forming a first resist layer made of an organic polymer material, and sensitizing light, X-rays, or electron beams on the first resist layer and a region of the layer to be processed on the mark forming region. Forming a second resist layer made of a photosensitive polymer material having the following formula: irradiating the second resist layer with the light, X-rays or electron beams, and subsequently developing the second resist layer Forming a patterned third resist layer on the first resist layer, and a reactive ion etching process on the first resist layer using the third resist layer as a mask. , The first Forming a patterned fourth resist layer from the distant layer as a processing resist layer. The method according to claim 1, further comprising: Forming a fifth resist layer made of an organic polymer material which is irradiated with light, X-ray or electron beam and then cross-linked by heat treatment; By irradiating the light, X-ray or electron beam to a region other than the region on the mark forming region of the layer, the fifth region is formed.
Forming a sixth resist layer irradiated with the light, X-ray or electron beam from the resist layer, and then subjecting the sixth resist layer to a heat treatment and a subsequent developing treatment. Resist layer formation method. 3. A cross-linking process is performed on a layer to be processed formed on a substrate having a mark-forming region forming a mark due to unevenness in a region other than the region on the mark-forming region. Forming a first resist layer made of an organic polymer material; and forming a first resist layer on the mark forming region of the first resist layer and the layer to be processed. Forming a mask material layer having resistance to the reactive ion etching process and a second resist layer made of a photosensitive polymer material having sensitivity to light, X-rays or electron beams in that order. The second resist layer is irradiated with the light, X-rays, or electron beams, and then subjected to a developing process, so that the second resist layer is patterned from the second resist layer onto the first resist layer. Step of forming a resist layer Forming a patterned mask layer from the mask material layer by a reactive ion etching process using the third resist layer as a mask for the mask material layer; Forming a patterned fourth resist layer as a processing resist layer from the first resist layer by reactive ion etching using the mask layer as a mask. In the method, a fifth resist layer made of an organic polymer material that is crosslinked by being irradiated with light, X-rays, or an electron beam is formed on the layer to be processed in forming the first resist layer. Next, the fifth resist layer is irradiated with the light, X-rays or electron beams in a region other than the region on the mark forming region, followed by a developing process. Processing the resist layer forming method characterized by performing. 4. The method according to claim 2, wherein the organic polymer material constituting the fifth resist layer is exposed to the light, X-rays or electron beams to form an acid. A method of forming a resist layer for processing, characterized in that the resist is a negative chemically amplified resist material made of an organic polymer material which generates cross-links by using the catalyst as a catalyst.