JP3152469B2 - Manufacturing method of conductive film - Google Patents
Manufacturing method of conductive filmInfo
- Publication number
- JP3152469B2 JP3152469B2 JP33004391A JP33004391A JP3152469B2 JP 3152469 B2 JP3152469 B2 JP 3152469B2 JP 33004391 A JP33004391 A JP 33004391A JP 33004391 A JP33004391 A JP 33004391A JP 3152469 B2 JP3152469 B2 JP 3152469B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- conductive film
- mask
- conductor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、暖房用、ヘアドライ
ヤ、ヘアカーラなどのヒータとして、また、プリント基
板に形成され配線用として用いられる導体膜の製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a conductor film for use as a heater for heating, a hair dryer, a hair curler, and the like, and a wiring formed on a printed circuit board and used for wiring.
【０００２】[0002]
【従来の技術】この種、導体膜およびその製造方法とし
て、例えば特開平１−１１７２８７号公報に記載の技術
が知られており、この従来技術によれば、図３に示され
るように、金属体２１の表面に絶縁膜２２を形成し、次
にこの絶縁膜２２に密接するようにマスク２４を配置
し、このマスク２４の前面から溶射ガン２５により導体
膜２３を形成していた。2. Description of the Related Art As this kind of conductor film and a method for manufacturing the same, for example, a technique described in Japanese Patent Application Laid-Open No. 1-117287 is known. According to this conventional technique, as shown in FIG. An insulating film 22 is formed on the surface of the body 21, and then a mask 24 is disposed so as to be in close contact with the insulating film 22, and a conductor film 23 is formed from the front surface of the mask 24 by a spray gun 25.
【０００３】[0003]
【発明が解決しようとする課題】しかし、前述した従来
の技術によると、図４（ａ）で明らかなように、マスク
２４が絶縁基板２６の表面に密接していると、その前面
から導体材料を溶射したとき、マスク孔の内壁に沿って
導体膜２３が区画形成されるため、図４（ｂ）のよう
に、導体膜２３の断面は矩形状となり、絶縁膜２２との
間の接触面積が小さくなることから、密着強度が低く剥
離し易いという課題があった。また、従来の技術による
と、溶射作業後、マスク２４を取り外すとき、マスク２
４の壁面に導体が付着して絶縁膜２２から剥離し易いと
いう課題があった。本発明は斯かる課題を解決するため
になされたもので、その目的とするところは、基板上に
形成された導体膜の剥離を防止することができる導体膜
の製造方法を提供することにある。However, according to the above-mentioned prior art, when the mask 24 is in close contact with the surface of the insulating substrate 26, as shown in FIG. 4B, the conductor film 23 is sectioned along the inner wall of the mask hole, so that the cross section of the conductor film 23 becomes rectangular as shown in FIG. Has a problem that adhesion strength is low and peeling is easy. According to the conventional technique, when removing the mask 24 after the thermal spraying operation, the mask 2
There is a problem that the conductor adheres to the wall surface of No. 4 and easily peels off from the insulating film 22. The present invention has been made to solve such a problem, and an object of the present invention is to provide a conductive film capable of preventing a conductive film formed on a substrate from peeling off.
It is to provide a manufacturing method of.
【０００４】[0004]
【課題を解決するための手段】前記目的を達成するため
に、本発明は、基板上に形成される導体膜の断面を、裾
野の広い山形とし、かつ基板上に導体膜を溶射により形
成する際、基板前面にマスクを配置し、このマスクと基
板との間に導体膜厚以上の隙間を設けて溶射を行うこと
を特徴とする。In order to achieve the above-mentioned object, the present invention provides a conductive film formed on a substrate in a cross section having a wide skirt, and a conductive film formed on the substrate by thermal spraying. At this time, a mask is arranged on the front surface of the substrate, and a thermal spraying is performed by providing a gap between the mask and the substrate with a thickness equal to or larger than the conductor film thickness .
【０００５】本発明によれば、導体膜の断面が裾野の広
い山形となっているため、基板側の接触面積が大きく、
従って密度強度も高く、容易に剥離することがないとい
う利点を有する。また、基板上に導体膜を溶射により形
成する際、マスクと基板との間に適度な隙間を設けて溶
射を行うこととしているため、吹き付けられた導体材料
は基板側に広がり、これに伴い、形成される導体膜は基
板に密接する側の裾野が広い山形となる。従って、基板
側の接触面積が大きくなり、密着強度も高く、剥離が生
じるおそれがないと共に、マスクの壁面に導体が付着す
るおそれもない。According to the present invention, since the cross section of the conductive film has a mountain shape with a wide skirt, the contact area on the substrate side is large,
Therefore, there is an advantage that the density strength is high and the film is not easily separated. Also, when forming a conductive film on the substrate by thermal spraying, since a suitable gap is provided between the mask and the substrate and thermal spraying is performed, the sprayed conductive material spreads to the substrate side, and accordingly, The formed conductive film has a mountain shape with a wide skirt on the side close to the substrate. Accordingly, the contact area on the substrate side is increased, the adhesion strength is high, there is no possibility of peeling, and there is no possibility that the conductor adheres to the wall surface of the mask.
【０００６】[0006]
【実施例】以下、図面に基づき本発明の好ましい実施例
を説明する。なお、本実施例において、「導体膜」の語
は、ヒータ等に用いられる抵抗膜をも含む概念で用いて
いる。図１は、溶射により絶縁基板１０に導体パターン
を形成した状態を示す。すなわち、基板１の上に絶縁層
２を溶射して絶縁基板１０を形成し、この絶縁基板１０
の前面に０．２〜１．５ｍｍの隙間を隔ててマスク４を
配置する。そして、このマスク４の前面から溶射ガンに
より導体を溶射すれば、絶縁層２の上に導体層３が形成
される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. In this embodiment, the term “conductor film” is used in a concept including a resistance film used for a heater or the like. FIG. 1 shows a state where a conductor pattern is formed on an insulating substrate 10 by thermal spraying. That is, the insulating layer 2 is sprayed on the substrate 1 to form the insulating substrate 10.
Is arranged with a gap of 0.2 to 1.5 mm in front of the mask 4. When the conductor is sprayed from the front surface of the mask 4 by a spray gun, the conductor layer 3 is formed on the insulating layer 2.
【０００７】前記基板１としては、Ａｌ，Ｆｅ，Ｃｕ等
の金属基板や、Ａｌ2 Ｏ3 やＳｉＯ2 等のセラミック基
板が用いられ、また、絶縁層２としては、Ａｌ2 Ｏ3 や
ＳｉＯ2 等のセラミックが用いられる。更に、導体層３
としては、Ｎｉ−Ｃｒ，Ｆｅ−Ｃｒ，Ｎｉ−Ａｌ等が用
いられる。こうして形成された導体層３は、その断面
が、絶縁層２に密接する側の裾野が広い山形となり、絶
縁層２との間の接触面積が大きいため、強い密着強度が
得られる。As the substrate 1, a metal substrate of Al, Fe, Cu or the like, or a ceramic substrate of Al 2 O 3 or SiO 2 is used. As the insulating layer 2, Al 2 O 3 or SiO 2 is used. And the like are used. Further, the conductor layer 3
For example, Ni-Cr, Fe-Cr, Ni-Al or the like is used. The conductor layer 3 formed in this manner has a cross section in the form of a mountain with a wide skirt on the side close to the insulating layer 2 and a large contact area with the insulating layer 2, so that a strong adhesion strength is obtained.
【０００８】図２（ａ）〜（ｆ）は、前記導体層３の具
体的な製造工程を示している。すなわち、図２（ａ）の
ような金属基板１の表面に、図２（ｂ）のように絶縁層
２を溶射して、絶縁基板１０が形成される。なお、基板
１がセラミック基板の場合は、絶縁層２の溶射は必ずし
も必要ではない。基板自体が絶縁性を有しているからで
ある。FIGS. 2A to 2F show a specific manufacturing process of the conductor layer 3. FIG. That is, as shown in FIG. 2B, the insulating layer 2 is sprayed on the surface of the metal substrate 1 as shown in FIG. When the substrate 1 is a ceramic substrate, the thermal spraying of the insulating layer 2 is not always necessary. This is because the substrate itself has insulating properties.
【０００９】次に、図２（ｃ）のように、絶縁基板１０
の前面にスペーサ５を介してマスク４をセットする。こ
のときのスペーサ５の厚さは、０．２〜１．５ｍｍ程度
が望ましい。次に、図２（ｄ）のように、マスク４の前
面から溶射ガンを用いて基板１に向け導体を溶射する。
この場合、絶縁基板１０とマスク４との間には適度なギ
ャップがあるため、溶射された導体は絶縁基板１０側に
向かって広がり、その結果、形成される導体層３の断面
は、絶縁基板１０に密接する側の裾野が広い山形とな
る。Next, as shown in FIG.
The mask 4 is set via the spacer 5 on the front surface of the mask 4. At this time, the thickness of the spacer 5 is desirably about 0.2 to 1.5 mm. Next, as shown in FIG. 2D, a conductor is sprayed toward the substrate 1 from the front surface of the mask 4 using a spray gun.
In this case, since there is an appropriate gap between the insulating substrate 10 and the mask 4, the sprayed conductor spreads toward the insulating substrate 10, and as a result, the cross section of the formed conductor layer 3 is The skirt on the side close to 10 becomes a wide mountain shape.
【００１０】このため、マスク４を取り外せば、図２
（ｅ）のように、絶縁基板１０上には断面が山形の導体
層３が形成される。しかも、このとき、溶射される導体
はマスク孔の壁面に沿って密着するおそれがないため、
マスク４の壁面には導体が付着せず、従って、マスク４
の取り外し時にも導体が絶縁層２から剥離することはな
い。このようにしてできた導体層３は、接触面積が大き
いため密着強度が強く、剥離しにくい導体パターンが得
られる。更に、図２（ｆ）のように、形成された導体層
３の上から、更に絶縁層６を溶射して封止すれば、より
安定した密着強度が得られる。For this reason, if the mask 4 is removed, FIG.
As shown in (e), the conductor layer 3 having a mountain-shaped cross section is formed on the insulating substrate 10. In addition, at this time, since the conductor to be sprayed does not adhere along the wall surface of the mask hole,
The conductor does not adhere to the wall surface of the mask 4, and therefore, the mask 4
The conductor does not peel off from the insulating layer 2 even when it is removed. The conductor layer 3 thus formed has a large contact area and thus has a high adhesion strength, and a conductor pattern that is difficult to peel off can be obtained. Further, as shown in FIG. 2F, if the insulating layer 6 is further thermally sprayed and sealed from above the formed conductor layer 3, more stable adhesion strength can be obtained.
【００１１】なお、以上の実施例では、基板１の片面に
導体膜を形成する場合について説明したが、これ以外
に、例えば基板１の表裏両面に導体膜を形成する場合
は、基板１の片面に導体膜を形成した後、上記の工程を
繰り返したり、または、各工程ごとに基板１の両面に同
様の処理を行えば良い。In the above embodiment, the case where the conductor film is formed on one surface of the substrate 1 has been described. In addition, for example, when the conductor film is formed on both the front and back surfaces of the substrate 1, After the conductive film is formed on the substrate 1, the above steps may be repeated, or the same processing may be performed on both surfaces of the substrate 1 for each step.
【００１２】[0012]
【発明の効果】以上説明した通り、本発明は、基板上に
形成される導体膜の断面を、裾野の広い山形としたこと
により、接触面積が大きくなり、密着強度の強い導体膜
を得ることができる。また、基板上に導体膜を溶射によ
り形成する際、基板前面にマスクを配置し、このマスク
と基板との間に隙間を設けて溶射を行うことにより、導
体膜の断面が山形となり、前記と同様の効果が得られる
と共に、マスク孔の壁面に導体が付着するおそれがない
ため、導体を溶射した後のマスク取り外し時において
も、導体層の剥離のおそれがない。As described above, according to the present invention, a conductive film having a large contact area and a high adhesion strength can be obtained by forming a cross section of a conductive film formed on a substrate into a mountain shape having a wide skirt. Can be. Also, when forming a conductive film on the substrate by thermal spraying, a mask is arranged on the front surface of the substrate, and a thermal spray is performed by providing a gap between the mask and the substrate, so that the cross section of the conductive film becomes mountain-shaped, and The same effect can be obtained, and the conductor does not adhere to the wall surface of the mask hole. Therefore, even when the mask is removed after the conductor is thermally sprayed, there is no possibility that the conductor layer is peeled.
【図１】基板上に導体膜を形成した状態を示す図であ
る。FIG. 1 is a diagram showing a state in which a conductive film is formed on a substrate.
【図２】（ａ）〜（ｆ）は、導体膜の具体的な製造工程
を示す図である。FIGS. 2A to 2F are diagrams showing specific steps of manufacturing a conductive film.
【図３】従来における導体膜の製造工程の一部を示す外
観図である。FIG. 3 is an external view showing a part of a conventional manufacturing process of a conductive film.
【図４】（ａ）は従来における導体膜の製造工程を示
し、（ｂ）は基板上に形成された導体膜の断面を示す図
である。FIG. 4A is a view showing a conventional process of manufacturing a conductive film, and FIG. 4B is a view showing a cross section of the conductive film formed on a substrate.
１・・・基板 ２，６・・・絶縁層 ３・・・導体層 ４・・・マスク ５・・・スペーサ １０・・・絶縁基板 DESCRIPTION OF SYMBOLS 1 ... Substrate 2, 6 ... Insulating layer 3 ... Conductive layer 4 ... Mask 5 ... Spacer 10 ... Insulating substrate
Claims (1)
野の広い山形とし、かつ基板上に導体膜を溶射により形
成する際、基板前面にマスクを配置し、このマスクと基
板との間に導体膜厚以上の隙間を設けて溶射を行うこと
を特徴とする導体膜の製造方法。A cross section of a conductive film formed on a substrate is formed into a mountain shape with a wide skirt and a mask is arranged on a front surface of the substrate when the conductive film is formed on the substrate by thermal spraying. A method for producing a conductive film, wherein a thermal spraying is performed by providing a gap between the conductive film and the conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33004391A JP3152469B2 (en) | 1991-11-19 | 1991-11-19 | Manufacturing method of conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33004391A JP3152469B2 (en) | 1991-11-19 | 1991-11-19 | Manufacturing method of conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05145220A JPH05145220A (en) | 1993-06-11 |
| JP3152469B2 true JP3152469B2 (en) | 2001-04-03 |
Family
ID=18228137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33004391A Expired - Fee Related JP3152469B2 (en) | 1991-11-19 | 1991-11-19 | Manufacturing method of conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3152469B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308778C (en) * | 2000-03-15 | 2007-04-04 | 富士施乐株式会社 | Fixing device |
| KR100773414B1 (en) * | 2000-05-26 | 2007-11-05 | 중소기업은행 | Method for producting flat panel type thick film resistor |
| EP3129213A4 (en) * | 2014-04-08 | 2017-11-29 | William Marsh Rice University | Production and use of flexible conductive films and inorganic layers in electronic devices |
| JP6387889B2 (en) * | 2015-04-15 | 2018-09-12 | トヨタ自動車株式会社 | Thermal spray coating formation method |
-
1991
- 1991-11-19 JP JP33004391A patent/JP3152469B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05145220A (en) | 1993-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |