JP3130684U - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
- Publication number
- JP3130684U JP3130684U JP2007000298U JP2007000298U JP3130684U JP 3130684 U JP3130684 U JP 3130684U JP 2007000298 U JP2007000298 U JP 2007000298U JP 2007000298 U JP2007000298 U JP 2007000298U JP 3130684 U JP3130684 U JP 3130684U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- support frame
- housing
- installation section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009434 installation Methods 0.000 claims abstract description 51
- 238000004806 packaging method and process Methods 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 230000004807 localization Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 8
- 229920003002 synthetic resin Polymers 0.000 description 8
- 239000000057 synthetic resin Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Abstract
【解決手段】
発光ダイオードは、少なくとも筐体、筐体内に設置する支持フレーム、少なくとも一個の発光チップ及びパッケージング樹脂体を含む。支持フレームは発光チップを設置する設置区と設置区と分離する電極区を設置し、且つ設置区は適する位置に段差部を成形する。その段差部可が筐体と支持フレームの接触面積を増やし、筐体と支持フレームの相互定位の安定性を高める。
【選択図】図3
Description
解決しようとする問題点は、筐体と支持フレームの定位が悪く、また放熱効果も悪い点である。
更に筐体21完成後、支持フレーム22と金属材帯3を分離し、図9に示すとおりの発光ダイオード構造を形成する。この凸出部224及び支持部225は、筐体21表面外に露出し、続いて製造工程の接点となる。
11 支持フレーム
111 キャリア部
12 発光チップ
13 金線
14 合成樹脂筐体
15 接続脚
2 発光ダイオード
21 筐体
211 納置層
212 開口
22 支持フレーム
221 設置区
222 電極区
2221 プラス電極区
2222 マイナス電極区
223 段差部
224 凸出部
225 支持部
23 発光チップ
24 導線
25 パッケージング樹脂体
3 金属材帯
Claims (10)
- 発光ダイオードにおいて、
内部に一支持フレームを設置し、支持フレームの外に露出部に一納置槽を形成した一筐体と,
一個の発光チップを置く一設置区、及び設置区と分離する一電極区を設置し、且つその設置区の適するには段差部を形成する支持フレームと、
一導線と電極区が電気連接する発光チップと、
納置槽内に設置する一パッケージング樹脂体を含むことを特徴とする発光ダイオード。 - 前記設置区は、その厚みが電極区の厚みより大きいことを特徴とする請求項1記載の発光ダイオード。
- 前記設置区は、辺側に外に向かって伸びる一凸出部を成形することを特徴とする請求項1記載の発光ダイオード。
- 前記納置槽は、その底部の設置区と相対する箇所に一開口を形成し、設置区の底部は、筐体底部から外に露出することを特徴とする請求項1記載の発光ダイオード。
- 前記設置区は、その底部が筐体底部と平面を形成することを特徴とする請求項4記載の発光ダイオード。
- 前記設置区は、その底部が筐体底部から突出することを特徴とする請氷項4記載の発光ダイオード。
- 前記段差部は、設置区底部に設置することを特徴とする請求項1記載の発光ダイオード。
- 発光ダイオードにおいて内部に一支持フレームを設置し、支持フレームの外に露出部に一納置槽を形成した一筐体と、
一個の発光チップを置く一設置区、及び設置区と分離する一電極区を設置し、且つその設置区の適するには段差部を形成する支持フレームと、
一導線と電極区を電気連接する発光チップと、
納置槽内に設置する一パッケージング樹脂体を含むことを特徴とする発光ダイオード。 - 前記電極区は、一組以上の相互に分離するプラス、マイナス電極区で、各プラス、マイナス電極区は辺側に外に向かって伸びる一支持部を成形し、支持部によって筐体外側に伸びることを特徴とする請求項8記載の発光ダイオード。
- 前記設置区は、辺側に外に向かって伸びる一凸出部を成形し、この凸出部が筐体外側まで伸びることを特徴とする請求項8記載の発光ダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095222669U TWM312778U (en) | 2006-12-22 | 2006-12-22 | Improved LED |
Publications (1)
Publication Number | Publication Date |
---|---|
JP3130684U true JP3130684U (ja) | 2007-04-05 |
Family
ID=38752250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007000298U Expired - Lifetime JP3130684U (ja) | 2006-12-22 | 2007-01-23 | 発光ダイオード |
Country Status (3)
Country | Link |
---|---|
US (2) | US8125136B2 (ja) |
JP (1) | JP3130684U (ja) |
TW (1) | TWM312778U (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0461987U (ja) * | 1990-10-04 | 1992-05-27 | ||
JP2009252419A (ja) * | 2008-04-03 | 2009-10-29 | Minebea Co Ltd | 線状光源装置、および面状照明装置 |
EP2158617A2 (en) * | 2007-06-20 | 2010-03-03 | LG Innotek Co., Ltd. | Light emitting device package and manufacturing method thereof |
JP2012094906A (ja) * | 2010-01-29 | 2012-05-17 | Toshiba Corp | Ledパッケージ |
JP2015029052A (ja) * | 2013-06-28 | 2015-02-12 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを用いた発光装置 |
US9257417B2 (en) | 2012-12-29 | 2016-02-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
US9607934B2 (en) | 2013-07-31 | 2017-03-28 | Nichia Corporation | Lead frame, lead frame with resin attached thereto, resin package, light emitting device, and method for manufacturing resin package |
JP2018148223A (ja) * | 2013-06-28 | 2018-09-20 | 日亜化学工業株式会社 | 発光装置用パッケージ |
WO2020116452A1 (ja) * | 2018-12-05 | 2020-06-11 | 株式会社ダイセル | 光半導体装置 |
US10867894B2 (en) | 2018-10-11 | 2020-12-15 | Asahi Kasei Microdevices Corporation | Semiconductor element including encapsulated lead frames |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011115314B4 (de) * | 2011-09-29 | 2019-04-25 | Osram Opto Semiconductors Gmbh | LED-Modul |
DE102011056810B4 (de) | 2011-12-21 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
JP6021416B2 (ja) * | 2012-05-01 | 2016-11-09 | 日東電工株式会社 | 光半導体装置用リフレクタ付リードフレームおよびそれを用いた光半導体装置並びにその製造方法 |
JP6102187B2 (ja) | 2012-10-31 | 2017-03-29 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを用いた発光装置 |
TWD161897S (zh) * | 2013-02-08 | 2014-07-21 | 晶元光電股份有限公司 | 發光二極體之部分 |
USD847102S1 (en) | 2013-02-08 | 2019-04-30 | Epistar Corporation | Light emitting diode |
TWM509438U (zh) * | 2015-04-24 | 2015-09-21 | Unity Opto Technology Co Ltd | 發光二極體支架 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW546806B (en) * | 1999-11-08 | 2003-08-11 | Siliconware Precision Industries Co Ltd | Semiconductor package with common lead frame and heat sink |
US6670648B2 (en) * | 2001-07-19 | 2003-12-30 | Rohm Co., Ltd. | Semiconductor light-emitting device having a reflective case |
US6639356B2 (en) | 2002-03-28 | 2003-10-28 | Unity Opto Technology Co., Ltd. | Heat dissipating light emitting diode |
-
2006
- 2006-12-22 TW TW095222669U patent/TWM312778U/zh not_active IP Right Cessation
-
2007
- 2007-01-22 US US11/656,005 patent/US8125136B2/en active Active
- 2007-01-23 JP JP2007000298U patent/JP3130684U/ja not_active Expired - Lifetime
-
2012
- 2012-01-23 US US13/356,317 patent/US8508114B2/en active Active
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0461987U (ja) * | 1990-10-04 | 1992-05-27 | ||
EP2158617A2 (en) * | 2007-06-20 | 2010-03-03 | LG Innotek Co., Ltd. | Light emitting device package and manufacturing method thereof |
EP2158617A4 (en) * | 2007-06-20 | 2013-08-07 | Lg Innotek Co Ltd | PHOTOEMETTER DEVICE HOUSING AND METHOD FOR MANUFACTURING THE SAME |
US8587118B2 (en) | 2007-06-20 | 2013-11-19 | Lg Innotek Co., Ltd. | Light emitting device package and manufacturing method thereof |
JP2009252419A (ja) * | 2008-04-03 | 2009-10-29 | Minebea Co Ltd | 線状光源装置、および面状照明装置 |
JP2012094906A (ja) * | 2010-01-29 | 2012-05-17 | Toshiba Corp | Ledパッケージ |
USRE47504E1 (en) | 2012-12-29 | 2019-07-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
US9257417B2 (en) | 2012-12-29 | 2016-02-09 | Nichia Corporation | Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices |
US9406856B2 (en) | 2013-06-28 | 2016-08-02 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
US9647190B2 (en) | 2013-06-28 | 2017-05-09 | Nichia Corporation | Package for light emitting apparatus and light emitting apparatus including the same |
US9991432B2 (en) | 2013-06-28 | 2018-06-05 | Nichia Corporation | Light emitting apparatus |
JP2018148223A (ja) * | 2013-06-28 | 2018-09-20 | 日亜化学工業株式会社 | 発光装置用パッケージ |
US10305011B2 (en) | 2013-06-28 | 2019-05-28 | Nichia Corporation | Light emitting apparatus |
JP2015029052A (ja) * | 2013-06-28 | 2015-02-12 | 日亜化学工業株式会社 | 発光装置用パッケージ及びそれを用いた発光装置 |
US9607934B2 (en) | 2013-07-31 | 2017-03-28 | Nichia Corporation | Lead frame, lead frame with resin attached thereto, resin package, light emitting device, and method for manufacturing resin package |
US10366945B2 (en) | 2013-07-31 | 2019-07-30 | Nichia Corporation | Lead frame, lead frame with resin attached thereto, resin package, light emitting device, and method for manufacturing resin package |
US10867894B2 (en) | 2018-10-11 | 2020-12-15 | Asahi Kasei Microdevices Corporation | Semiconductor element including encapsulated lead frames |
WO2020116452A1 (ja) * | 2018-12-05 | 2020-06-11 | 株式会社ダイセル | 光半導体装置 |
JP2020092155A (ja) * | 2018-12-05 | 2020-06-11 | 株式会社ダイセル | 光半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US8125136B2 (en) | 2012-02-28 |
US20120120668A1 (en) | 2012-05-17 |
US20080151557A1 (en) | 2008-06-26 |
TWM312778U (en) | 2007-05-21 |
US8508114B2 (en) | 2013-08-13 |
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