JP3129497B2 - Phase change type optical recording medium - Google Patents

Phase change type optical recording medium

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Publication number
JP3129497B2
JP3129497B2 JP04017703A JP1770392A JP3129497B2 JP 3129497 B2 JP3129497 B2 JP 3129497B2 JP 04017703 A JP04017703 A JP 04017703A JP 1770392 A JP1770392 A JP 1770392A JP 3129497 B2 JP3129497 B2 JP 3129497B2
Authority
JP
Japan
Prior art keywords
optical recording
layer
protective layer
recording medium
phase change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04017703A
Other languages
Japanese (ja)
Other versions
JPH05217211A (en
Inventor
利彦 吉尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP04017703A priority Critical patent/JP3129497B2/en
Publication of JPH05217211A publication Critical patent/JPH05217211A/en
Application granted granted Critical
Publication of JP3129497B2 publication Critical patent/JP3129497B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、書き換え可能な相変化
型光記録媒体に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rewritable phase-change optical recording medium.

【0002】[0002]

【従来の技術】書き換え可能な光記録媒体には、相変化
型光記録媒体と光磁気型光記録媒体とがある。相変化型
光記録媒体の模式断面図を図2に示す。光記録層3はレ
ーザー照射により、溶融、半溶融状態を経て、アモルフ
ァス化し、反射率の違いにより情報の記録を行う。この
際、光記録層3の溶融、半溶融状態に伴う光記録層の蒸
発変形の防止、大気雰囲気等からの保護、あるいは、基
板への断熱の目的で保護層2、4により光記録層を挟む
ことが一般に行われている(特開昭63−103453
(松下)ZnS・SiO2その他の混合物より成る保護
層)。しかしながら、前記従来技術には、以下のような
問題点があった。
2. Description of the Related Art Rewritable optical recording media include phase-change optical recording media and magneto-optical recording media. FIG. 2 shows a schematic cross-sectional view of a phase change optical recording medium. The optical recording layer 3 is melted and semi-melted by laser irradiation, becomes amorphous, and records information by a difference in reflectance. At this time, the optical recording layer 3 is protected by the protective layers 2 and 4 for the purpose of preventing the optical recording layer 3 from evaporating and deforming due to the melting or semi-melting state, protecting the optical recording layer 3 from the air atmosphere, or insulating the substrate. In general, pinching is carried out (JP-A-63-103453).
(Matsushita) A protective layer made of ZnS.SiO 2 or other mixture. However, the prior art has the following problems.

【0003】保護層としてZnS・SiO2等の“S”
を含む化合物を使用する場合、剥離、クラック等の欠陥
を生ずることなく、数千オングストロームの厚さまで成
膜することができ、さらに熱膨脹率が低く、しかも断熱
性に優れているが、化合物に含まれる“S”と、記録層
中のAgとの結合エネルギ−が大きいために、図2に示
す従来の層構成をとった場合、記録層組成が変化するた
め、光記録媒体の記録、消去および繰返し特性の劣化と
いう問題が発生する。
As a protective layer, "S" such as ZnS.SiO 2 is used.
When a compound containing When the conventional layer configuration shown in FIG. 2 is adopted because the binding energy between “S” and Ag in the recording layer is large, the composition of the recording layer changes. The problem of deterioration of the repetition characteristics occurs.

【0004】[0004]

【発明が解決しようとする課題】本発明は、従来技術に
おける上記問題点を解消し、良好な記録、消去および繰
返し特性を有する相変化型光記録媒体を提供しようとす
るものである。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in the prior art and to provide a phase change type optical recording medium having good recording, erasing and repetition characteristics.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
の本発明の構成は、特許請求の範囲に記載のとおりの相
変化型光記録媒体である。
The structure of the present invention for solving the above problems is a phase change type optical recording medium as described in the claims.

【0006】具体的に説明すると基板1上に第1の保護
層2,Agを含む光記録層3,第2の保護層4および放
熱層5が順次形成され、前記光記録層3へのレーザー光
の照射によって生じる可逆的相変態を利用して情報の記
録、再生および消去を行う相変化型光記録媒体におい
て、前記第1および第2の保護層がAgを含む光記録層
3側に隣接したSiNあるいは、AlN、SiC等のチ
ッ化物、炭化物層とAgを含む記録層と反対側のZnS
・SiO2等のSを含む化合物層からなることを特徴と
する相変化型光記録媒体である。
More specifically, a first protective layer 2, an optical recording layer containing Ag, a second protective layer 4, and a heat radiation layer 5 are sequentially formed on a substrate 1, and a laser beam is applied to the optical recording layer 3. In a phase change type optical recording medium for recording, reproducing and erasing information utilizing a reversible phase transformation caused by light irradiation, the first and second protective layers are adjacent to the optical recording layer 3 containing Ag. SiN or nitride, such as AlN or SiC, ZnS on the opposite side of the recording layer containing Ag and the recording layer containing Ag
· A phase-change optical recording medium, characterized in that a compound layer containing S such as SiO 2.

【0007】図1は、本発明による相変化型光記録媒体
の一構成例を示す断面図であり、透明基板上1に第1の
保護層2、光記録層3、第2の保護層4および放熱層5
からなり、さらに第1の保護層および第2の保護層は光
記録層に隣接する保護層2−1,4−1とAgを含む光
記録層と反対側に成膜される保護層2−2,4−2から
なる。
FIG. 1 is a sectional view showing an example of the structure of a phase change type optical recording medium according to the present invention. A first protective layer 2, an optical recording layer 3, and a second protective layer 4 are formed on a transparent substrate 1. And heat radiation layer 5
And a first protective layer and a second protective layer, which are formed on the side opposite to the optical recording layer containing Ag and the protective layers 2-1 and 4-1 adjacent to the optical recording layer. 2,4-2.

【0008】基板1には、光透過性に優れ、耐熱性や耐
候性、耐薬品性に優れた材質が好ましい。プラスチック
やガラスはこの要求を満たしており、プラスチックはト
ラッキング用の案内溝やピットが2P法又は射出成形で
簡単にしかも安価に形成でき、ガラスは密着露光法のド
ライエッチング等でトラッキング用の溝やピットを形成
できる。プラスチックを用いる場合、特にポリカーボネ
ートやアモルファスのポリオレフィン等の材質が好まし
く使用される。基板1上に設ける第1の保護層2は、本
発明の特徴となるものであり、保護層2−1および保護
層2−2からなり、外界の湿気などによるAgを含む光
記録層の腐食を防止するパッシベーション効果と、レー
ザー照射に伴う蒸発・変形の防止および基板への断熱を
目的としている。保護層2−1には数千オングストロ−
ムの厚さまで剥離、クラック等の欠陥の発生を有さず成
膜可能であり、しかも熱膨脹率が低く、断熱性にも優れ
ているZnS・SiO2等が使用され、保護層2−2に
は、光記録層に含まれるAgとの結合エネルギ−が小さ
い元素のみを含むSiN、SiC、AlN等が使用され
る。第1の保護層2の成膜にはスパッタ法、蒸着法が使
用され、保護層2−1、保護層2−2はそれぞれ100
0〜3000Å,50〜500Åの膜厚に形成される。
The substrate 1 is preferably made of a material having excellent light transmittance, heat resistance, weather resistance and chemical resistance. Plastic and glass satisfy this requirement, and plastic guide grooves and pits can be formed easily and inexpensively by 2P method or injection molding, and glass can be formed by tracking etching grooves or dry etching by contact exposure method. Pits can be formed. When a plastic is used, a material such as polycarbonate or amorphous polyolefin is preferably used. The first protective layer 2 provided on the substrate 1 is a feature of the present invention, and is composed of the protective layer 2-1 and the protective layer 2-2, and the corrosion of the optical recording layer containing Ag due to external moisture or the like. The purpose is to provide a passivation effect to prevent the occurrence of heat, to prevent evaporation and deformation due to laser irradiation, and to insulate the substrate. Thousands of angstroms are formed on the protective layer 2-1.
It is possible to form a film without generating defects such as peeling and cracking up to the thickness of the film, and furthermore, ZnS / SiO 2 or the like having a low coefficient of thermal expansion and excellent heat insulation is used. For example, SiN, SiC, AlN or the like containing only an element having a small binding energy with Ag contained in the optical recording layer is used. The first protective layer 2 is formed by a sputtering method or a vapor deposition method, and the protective layer 2-1 and the protective layer 2-2 each have a thickness of 100.
It is formed to a thickness of 0 to 3000 ° and 50 to 500 °.

【0009】光記録層3にはSe,Te,等のカルコゲ
ン族元素を少なくとも1種類以上と、Agを含む合金が
使用され、このような合金として例えばAgInTeS
bなどがある。この光記録層3は、スパッタ法、蒸着法
により、200〜2000Åの膜厚が形成される。
For the optical recording layer 3, an alloy containing at least one chalcogen group element such as Se, Te, etc. and Ag is used. As such an alloy, for example, AgInTeS
b. The optical recording layer 3 is formed to a thickness of 200 to 2000 ° by a sputtering method or a vapor deposition method.

【0010】第2の保護層4は、第1の保護層同様本発
明の特徴となるものであり、保護層4−1および保護層
4−2からなる。保護層4−1にはZnS・SiO2
が使用されまた保護層4−2にはSiN、SiC、Al
N等が使用される。第2の保護層の成膜には、スパッタ
法、蒸着法が使用され、保護層4−1、保護層4−2は
それぞれ1000〜3000Å、50〜500Åの膜厚
に形成される。
The second protective layer 4 is a feature of the present invention similarly to the first protective layer, and includes a protective layer 4-1 and a protective layer 4-2. For the protective layer 4-1, ZnS · SiO 2 or the like is used. For the protective layer 4-2, SiN, SiC, Al
N or the like is used. A sputtering method and a vapor deposition method are used for forming the second protective layer, and the protective layer 4-1 and the protective layer 4-2 are formed to have a thickness of 1000 to 3000 Å and 50 to 500 そ れ ぞ れ, respectively.

【0011】放熱層5は、熱伝導率の高いAlあるいは
Al合金が一般に使用される。放熱層5は、スパッタ
法、蒸着法等により200Å〜2500Åに成膜され
る。
The heat radiation layer 5 is generally made of Al or an Al alloy having a high thermal conductivity. The heat radiation layer 5 is formed to a thickness of 200 to 2500 degrees by a sputtering method, an evaporation method, or the like.

【0012】以上本発明による一構成例について述べて
きたが、本発明はこの構成例のみに限定されるものでは
なく、例えば、反射層5の上に有機カバ−層を設けた
り、接着層を介して媒体を貼り合せ両面記録型とするな
ど、種々の変形、変更が可能である。
Although one configuration example according to the present invention has been described above, the present invention is not limited to this configuration example only. For example, an organic cover layer may be provided on the reflective layer 5 or an adhesive layer may be provided. Various modifications and changes are possible, for example, a two-sided recording type in which the medium is bonded through the media.

【0013】[0013]

【実施例】図1に示すように、ポリカーボネイト製基板
1上にZnS・SiO2ターゲットを使用し、Ar雰囲
気中にてZnS・SiO2からなる保護層2−1をスパ
ッタ成膜し、その上にSiターゲットを使用し、Arと
N雰囲気中でSiNからなる保護層2−2をスパッタ成
膜した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, using a ZnS · SiO 2 targets on polycarbonate substrate 1, a protective layer 2-1 made of ZnS · SiO 2 in an Ar atmosphere by sputtering, on the , A protective layer 2-2 made of SiN was formed by sputtering in an Ar and N atmosphere.

【0014】光記録層3は、Ag:In:Te:Sbの
原子比が1:1:2:4であるターゲットを使用し、A
r雰囲気中にて成膜した。
The optical recording layer 3 uses a target having an atomic ratio of Ag: In: Te: Sb of 1: 1: 2: 4.
The film was formed in an r atmosphere.

【0015】保護層4−1は保護層2−1と同様に、ま
た保護層4−2は保護層2−2と同様に成膜した。
The protective layer 4-1 was formed in the same manner as the protective layer 2-1, and the protective layer 4-2 was formed in the same manner as the protective layer 2-2.

【0016】放熱層はAl−7wt%Tiターゲットを
使用し、Ar雰囲気中で成膜した。それぞれの各膜厚
は、保護層2−1が2000Å,保護層2−2が100
Å,光記録層が1000Å,保護層4−1が1000
Å,保護層4−2が100Å,反射放熱層5は500Å
とした。
The heat radiation layer was formed in an Ar atmosphere using an Al-7 wt% Ti target. The thickness of each of the protective layers 2-1 is 2,000, and the thickness of the protective layer 2-2 is 100.
Å, the optical recording layer is 1000Å, and the protective layer 4-1 is 10001000
Å, the protective layer 4-2 is 100Å, and the reflective heat dissipation layer 5 is 500Å.
And

【0017】比較例として、図2に示される層構成を有
するデイスクを作製した。保護層2,保護層4はともに
ZnS・SiO2であり、膜厚はそれぞれ2000Å,
1000Åとした。光記録3および放熱層5は実施例と
同様とした。
As a comparative example, a disk having the layer structure shown in FIG. 2 was manufactured. The protective layer 2 and the protective layer 4 are both made of ZnS.SiO 2 , each having a thickness of 2000
1000 °. The optical recording 3 and the heat radiation layer 5 were the same as in the example.

【0018】以上本発明による一構成例について述べて
きたが、本発明はこの構成例のみに限定されるものでは
なく、例えば、反射層5の上に有機カバ−層を設けた
り、接着層を介して媒体を貼り合せ両面記録型とするな
ど、種々の変形、変更が可能である。
Although one configuration example according to the present invention has been described above, the present invention is not limited to this configuration example only. For example, an organic cover layer may be provided on the reflective layer 5 or an adhesive layer may be provided. Various modifications and changes are possible, for example, a two-sided recording type in which the medium is bonded through the media.

【0019】各デイスクは、レ−ザ−照射により、10
mwで初期化を行った後、ライトパワ−12mw,バイ
アス6mwで記録、消去を繰り返し、記録特性が45d
B以上,消去比25dB以上が保たれる繰り返し回数を
測定した。
Each disk is irradiated with a laser beam for 10 minutes.
After initializing with mw, recording and erasing are repeated with write power of 12 mw and bias of 6 mw, and the recording characteristic becomes 45d.
The number of repetitions at which B or more and the erasure ratio of 25 dB or more were maintained was measured.

【0020】その結果、実施例のデイスクは10万回以
上の繰り返しが可能であったが、比較例のデイスクは1
万5千回程度の繰り返しにより記録特性,消去比ともに
それぞれ45dB,25dB以下に低下した。
As a result, the disc of the embodiment could be repeated 100,000 times or more, whereas the disc of the comparative example was 1
By repeating about 15,000 times, the recording characteristics and the erasing ratio were reduced to 45 dB and 25 dB, respectively.

【0021】また初期記録特性および消去比は実施例で
それぞれ50dB,および40dBであったのに対し、
比較例では、それぞれ49dB,38dBであった。
The initial recording characteristics and the erasing ratio were 50 dB and 40 dB in the examples, respectively.
In the comparative examples, they were 49 dB and 38 dB, respectively.

【0022】[0022]

【発明の効果】以上説明したように、本発明によればA
gを含む光記録層をもつ相変化型光記録媒体において、
保護層を2層としAgを含む光記録層側をSiN,Si
C,AlN等のチツ化物,炭化物化合物とし、そのが外
側をZnSあるいはZnSを含む化合物とすることによ
り記録、消去特性、繰り返し特性を改善した。
As described above, according to the present invention, A
In a phase change optical recording medium having an optical recording layer containing g,
The optical recording layer side including Ag is made of SiN, Si
Recording, erasing characteristics and repetition characteristics were improved by using nitrides or carbides such as C and AlN, and using ZnS or a compound containing ZnS on the outside.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光記録媒体の構成を示す断面の模式
図。
FIG. 1 is a schematic cross-sectional view showing a configuration of an optical recording medium of the present invention.

【図2】従来の光記録媒体の構成を示す断面の模式図。FIG. 2 is a schematic cross-sectional view showing a configuration of a conventional optical recording medium.

【符号の説明】[Explanation of symbols]

1 基板 2 保護層 2−1 保護層 2−2 保護層 3 光記録層 4 保護層 4−1 保護層 4−2 保護層 5 放熱層 DESCRIPTION OF SYMBOLS 1 Substrate 2 Protective layer 2-1 Protective layer 2-2 Protective layer 3 Optical recording layer 4 Protective layer 4-1 Protective layer 4-2 Protective layer 5 Heat dissipation layer

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基板上に、少なくとも、銀を含有する光
記録層、保護層および放熱層を備え、光記録層に光エネ
ルギーを照射することによって、情報の記録、再生、消
去を行う、相変化型光記録媒体において、保護層が2層
からなり、光記録層に隣接した保護層が窒化物または炭
化物であり、その外側の保護層が硫化亜鉛または硫化亜
鉛を含む複合化合物であることを特徴とする相変化型光
記録媒体。
An optical recording layer comprising at least a silver-containing optical recording layer, a protective layer, and a heat radiation layer on a substrate, and recording, reproducing, and erasing information by irradiating the optical recording layer with light energy. In the variable-type optical recording medium, the protective layer is composed of two layers, the protective layer adjacent to the optical recording layer is nitride or carbide, and the outer protective layer is zinc sulfide or a composite compound containing zinc sulfide. Characterized by a phase change optical recording medium.
JP04017703A 1992-02-03 1992-02-03 Phase change type optical recording medium Expired - Fee Related JP3129497B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04017703A JP3129497B2 (en) 1992-02-03 1992-02-03 Phase change type optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04017703A JP3129497B2 (en) 1992-02-03 1992-02-03 Phase change type optical recording medium

Publications (2)

Publication Number Publication Date
JPH05217211A JPH05217211A (en) 1993-08-27
JP3129497B2 true JP3129497B2 (en) 2001-01-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP04017703A Expired - Fee Related JP3129497B2 (en) 1992-02-03 1992-02-03 Phase change type optical recording medium

Country Status (1)

Country Link
JP (1) JP3129497B2 (en)

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US7008681B2 (en) 2002-03-15 2006-03-07 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and manufacturing method and recording/reproducing method for the same
AU2003268736A1 (en) 2002-10-02 2004-04-23 Mitsubishi Chemical Corporation Optical recording medium
US7074471B2 (en) 2003-03-27 2006-07-11 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, method for producing the medium, and method and apparatus for recording information using the medium
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