JPH05217211A - Phase change optical recording medium - Google Patents

Phase change optical recording medium

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Publication number
JPH05217211A
JPH05217211A JP1770392A JP1770392A JPH05217211A JP H05217211 A JPH05217211 A JP H05217211A JP 1770392 A JP1770392 A JP 1770392A JP 1770392 A JP1770392 A JP 1770392A JP H05217211 A JPH05217211 A JP H05217211A
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Prior art keywords
optical recording
layer
protective layer
recording medium
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP1770392A
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Japanese (ja)
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JP3129497B2 (en )
Inventor
Toshihiko Yoshio
利彦 吉尾
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Ricoh Co Ltd
株式会社リコー
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Abstract

PURPOSE:To provide a phase change optical recording medium having satisfactory recording, vanishing and repeating characteristics. CONSTITUTION:This phase change optical recording medium has a protective layer 2, an optical recording layer 3 contg. at least silver, a protective layer 4 and a heat radiating layer 5 on a substrate 1. Each of the protective layers 2, 4 consists of two layers, the protective layers 2-2, 4-2 adjacent to the optical recording layer 3 are made of AlN, Si3N4, SiC, etc., and the outer protective layers 2-1, 4-1 are made of ZnS or ZnS-SiO2.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、書き換え可能な相変化型光記録媒体に関するものである。 The present invention relates to relates to a phase-change optical recording medium capable of rewriting.

【0002】 [0002]

【従来の技術】書き換え可能な光記録媒体には、相変化型光記録媒体と光磁気型光記録媒体とがある。 BACKGROUND OF THE INVENTION rewritable optical recording medium, there is a phase-change optical recording medium and the magneto-optical type optical recording medium. 相変化型光記録媒体の模式断面図を図2に示す。 The schematic sectional view of a phase change optical recording medium shown in FIG. 光記録層3はレーザー照射により、溶融、半溶融状態を経て、アモルファス化し、反射率の違いにより情報の記録を行う。 The optical recording layer 3 is laser radiation, melt, through a semi-molten state, and amorphous, the recording of information by the difference in reflectance. この際、光記録層3の溶融、半溶融状態に伴う光記録層の蒸発変形の防止、大気雰囲気等からの保護、あるいは、基板への断熱の目的で保護層2、4により光記録層を挟むことが一般に行われている(特開昭63−103453 In this case, melting of the optical recording layer 3, preventing evaporation deformation of the optical recording layer due to the semi-molten state, protection from the atmosphere or the like, or an optical recording layer by the protective layers 2 and 4 for the purpose of thermal insulation to the substrate it is common to sandwich (JP-a-63-103453
(松下)ZnS・SiO 2その他の混合物より成る保護層)。 (Matsushita) ZnS · SiO 2 Other protective layer made of a mixture of). しかしながら、前記従来技術には、以下のような問題点があった。 However, it said prior art, has problems as follows.

【0003】保護層としてZnS・SiO 2等の“S” [0003] of ZnS · SiO 2 or the like as a protective layer "S"
を含む化合物を使用する場合、剥離、クラック等の欠陥を生ずることなく、数千オングストロームの厚さまで成膜することができ、さらに熱膨脹率が低く、しかも断熱性に優れているが、化合物に含まれる“S”と、記録層中のAgとの結合エネルギ−が大きいために、図2に示す従来の層構成をとった場合、記録層組成が変化するため、光記録媒体の記録、消去および繰返し特性の劣化という問題が発生する。 When using a compound containing, peeling, without causing defects such as cracks, can be deposited to a thickness several thousand angstroms, yet low thermal expansion coefficient, yet is excellent in heat insulating properties, included in the compound and "S" are binding energy of Ag in the recording layer - for large, when taking the conventional layer structure shown in FIG. 2, since the recording layer composition changes, the optical recording medium recording, erasing and problem of deterioration of the repetition characteristics may occur.

【0004】 [0004]

【発明が解決しようとする課題】本発明は、従来技術における上記問題点を解消し、良好な記録、消去および繰返し特性を有する相変化型光記録媒体を提供しようとするものである。 [SUMMARY OF THE INVENTION The present invention is to solve the above problems in the prior art points, good recording, is intended to provide a phase-change optical recording medium having an erase and repetition characteristics.

【0005】 [0005]

【課題を解決するための手段】上記課題を解決するための本発明の構成は、特許請求の範囲に記載のとおりの相変化型光記録媒体である。 Configuration of the present invention for solving the above object, according to an aspect of is a phase-change optical recording medium as described in the appended claims.

【0006】具体的に説明すると基板1上に第1の保護層2,Agを含む光記録層3,第2の保護層4および放熱層5が順次形成され、前記光記録層3へのレーザー光の照射によって生じる可逆的相変態を利用して情報の記録、再生および消去を行う相変化型光記録媒体において、前記第1および第2の保護層がAgを含む光記録層3側に隣接したSiNあるいは、AlN、SiC等のチッ化物、炭化物層とAgを含む記録層と反対側のZnS [0006] specifically described for the optical recording layer 3 containing the first protective layer 2, Ag on the substrate 1, the second protective layer 4 and the heat dissipation layer 5 are sequentially formed, the laser to the optical recording layer 3 recording by utilizing the reversible phase transformation caused by the irradiation of the optical information reproduction and the phase-change optical recording medium for erasure, adjacent the first and second protective layer in the optical recording layer 3 side containing Ag the SiN or, AlN, nitride such as SiC, the recording layer and the opposite side including a carbide layer and Ag ZnS
・SiO 2等のSを含む化合物層からなることを特徴とする相変化型光記録媒体である。 · A phase-change optical recording medium, characterized in that a compound layer containing S such as SiO 2.

【0007】図1は、本発明による相変化型光記録媒体の一構成例を示す断面図であり、透明基板上1に第1の保護層2、光記録層3、第2の保護層4および放熱層5 [0007] Figure 1 is a cross-sectional view showing a configuration example of a phase-change optical recording medium according to the present invention, the first protective layer 2 on the transparent substrate 1, the optical recording layer 3, second protection layer 4 and the heat dissipation layer 5
からなり、さらに第1の保護層および第2の保護層は光記録層に隣接する保護層2−1,4−1とAgを含む光記録層と反対側に成膜される保護層2−2,4−2からなる。 Made, further protective layer first protective layer and the second protective layer is to be formed on the side opposite to the optical recording layer comprising a protective layer 2-1,4-1 and Ag adjacent to the optical recording layer 2 consisting of 2,4-2.

【0008】基板1には、光透過性に優れ、耐熱性や耐候性、耐薬品性に優れた材質が好ましい。 [0008] substrate 1 is excellent in optical transparency, heat resistance and weather resistance, preferably a material having excellent chemical resistance. プラスチックやガラスはこの要求を満たしており、プラスチックはトラッキング用の案内溝やピットが2P法又は射出成形で簡単にしかも安価に形成でき、ガラスは密着露光法のドライエッチング等でトラッキング用の溝やピットを形成できる。 Plastic or glass meets this requirement, the plastic guide grooves or pits for tracking can be easily and inexpensively formed by 2P method or injection molding, glass Ya tracking grooves by dry etching or the like of the contact exposure method pit can be formed. プラスチックを用いる場合、特にポリカーボネートやアモルファスのポリオレフィン等の材質が好ましく使用される。 When using a plastic, especially a material such as polyolefin polycarbonate or amorphous it is preferably used. 基板1上に設ける第1の保護層2は、本発明の特徴となるものであり、保護層2−1および保護層2−2からなり、外界の湿気などによるAgを含む光記録層の腐食を防止するパッシベーション効果と、レーザー照射に伴う蒸発・変形の防止および基板への断熱を目的としている。 The first protective layer 2 provided on the substrate 1, which is a feature of the present invention consists of a protective layer 2-1 and the protective layer 2-2, corrosion of the optical recording layer containing Ag due outside moisture It is intended and the passivation effect of preventing the thermal insulation of the prevention and the substrate evaporation or deformation due to laser irradiation to. 保護層2−1には数千オングストロ− Several thousand angstroms in the protective layer 2-1 -
ムの厚さまで剥離、クラック等の欠陥の発生を有さず成膜可能であり、しかも熱膨脹率が低く、断熱性にも優れているZnS・SiO 2等が使用され、保護層2−2には、光記録層に含まれるAgとの結合エネルギ−が小さい元素のみを含むSiN、SiC、AlN等が使用される。 Peeling to a thickness of beam, a film can be formed without a generation of defects such as cracks, yet low thermal expansion coefficient, ZnS · SiO 2 or the like is excellent in heat insulating properties is used, the protective layer 2-2 the binding energy of Ag contained in the optical recording layer - SiN containing only a small element, SiC, AlN or the like is used. 第1の保護層2の成膜にはスパッタ法、蒸着法が使用され、保護層2−1、保護層2−2はそれぞれ100 Sputtering the first deposition of the protective layer 2, a vapor deposition method is used, the protective layer 2-1, the protective layer 2-2 each 100
0〜3000Å,50〜500Åの膜厚に形成される。 0~3000A, is formed to a thickness of 50-500.

【0009】光記録層3にはSe,Te,等のカルコゲン族元素を少なくとも1種類以上と、Agを含む合金が使用され、このような合金として例えばAgInTeS [0009] and Se, Te, a chalcogen-group elements and the like at least one more in the optical recording layer 3, an alloy containing Ag is used, as such alloys such AgInTeS
bなどがある。 b, and the like. この光記録層3は、スパッタ法、蒸着法により、200〜2000Åの膜厚が形成される。 The optical recording layer 3, a sputtering method, an evaporation method, the thickness of 200~2000Å is formed.

【0010】第2の保護層4は、第1の保護層同様本発明の特徴となるものであり、保護層4−1および保護層4−2からなる。 [0010] The second protective layer 4, which is a feature of the first protective layer similar present invention, a protective layer 4-1 and the protective layer 4-2. 保護層4−1にはZnS・SiO 2等が使用されまた保護層4−2にはSiN、SiC、Al SiN in addition protective layer 4-2 ZnS · SiO 2 or the like is used for the protective layer 4-1, SiC, Al
N等が使用される。 N or the like is used. 第2の保護層の成膜には、スパッタ法、蒸着法が使用され、保護層4−1、保護層4−2はそれぞれ1000〜3000Å、50〜500Åの膜厚に形成される。 The deposition of the second protective layer, a sputtering method, an evaporation method is used, the protective layer 4-1 each protective layer 4-2 1000 to 3000 .ANG, it is formed to a thickness of 50-500.

【0011】放熱層5は、熱伝導率の高いAlあるいはAl合金が一般に使用される。 [0011] heat dissipation layer 5 is higher Al or Al alloy thermal conductivity is generally used. 放熱層5は、スパッタ法、蒸着法等により200Å〜2500Åに成膜される。 Heat dissipation layer 5, a sputtering method, is deposited 200Å~2500Å by vapor deposition or the like.

【0012】以上本発明による一構成例について述べてきたが、本発明はこの構成例のみに限定されるものではなく、例えば、反射層5の上に有機カバ−層を設けたり、接着層を介して媒体を貼り合せ両面記録型とするなど、種々の変形、変更が可能である。 [0012] Having described an exemplary configuration according to the present invention above, the present invention is not limited only to this configuration example, for example, an organic cover on the reflective layer 5 - or provided with a layer, an adhesive layer such as a combined two-sided recording type paste the medium through, various modifications and changes can be made.

【0013】 [0013]

【実施例】図1に示すように、ポリカーボネイト製基板1上にZnS・SiO 2ターゲットを使用し、Ar雰囲気中にてZnS・SiO 2からなる保護層2−1をスパッタ成膜し、その上にSiターゲットを使用し、ArとN雰囲気中でSiNからなる保護層2−2をスパッタ成膜した。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, using a ZnS · SiO 2 targets on polycarbonate substrate 1, a protective layer 2-1 made of ZnS · SiO 2 in an Ar atmosphere by sputtering, on the Si use a target, by sputtering a protective layer 2-2 made of SiN in an Ar and N atmosphere.

【0014】光記録層3は、Ag:In:Te:Sbの原子比が1:1:2:4であるターゲットを使用し、A [0014] The optical recording layer 3, Ag: an In: Te: atomic ratio of Sb is 1: 1: 2: Using the target is 4, A
r雰囲気中にて成膜した。 It was formed in in r atmosphere.

【0015】保護層4−1は保護層2−1と同様に、また保護層4−2は保護層2−2と同様に成膜した。 [0015] Similar to the protective layer 4-1 and the protective layer 2-1 and the protective layer 4-2 was formed in the same manner as the protective layer 2-2.

【0016】放熱層はAl−7wt%Tiターゲットを使用し、Ar雰囲気中で成膜した。 The heat dissipation layer uses Al-7 wt% Ti target was deposited in an Ar atmosphere. それぞれの各膜厚は、保護層2−1が2000Å,保護層2−2が100 Each of the thickness of the protective layer 2-1 is 2000 Å protective layer 2-2 100
Å,光記録層が1000Å,保護層4−1が1000 Å, optical recording layer is 1000 Å, the protective layer 4-1 1000
Å,保護層4−2が100Å,反射放熱層5は500Å Å, protective layer 4-2 100 Å, reflective heat dissipation layer 5 is 500Å
とした。 And the.

【0017】比較例として、図2に示される層構成を有するデイスクを作製した。 [0017] As a comparative example, it was produced a disc having a layer structure shown in FIG. 保護層2,保護層4はともにZnS・SiO 2であり、膜厚はそれぞれ2000Å, Protective layer 2, the protective layer 4 are both ZnS · SiO 2, respectively the film thickness 2000 Å,
1000Åとした。 Was 1000Å. 光記録3および放熱層5は実施例と同様とした。 Optical recording 3 and the heat radiating layer 5 were the same as in Example.

【0018】以上本発明による一構成例について述べてきたが、本発明はこの構成例のみに限定されるものではなく、例えば、反射層5の上に有機カバ−層を設けたり、接着層を介して媒体を貼り合せ両面記録型とするなど、種々の変形、変更が可能である。 [0018] Having described an exemplary configuration according to the present invention above, the present invention is not limited only to this configuration example, for example, an organic cover on the reflective layer 5 - or provided with a layer, an adhesive layer such as a combined two-sided recording type paste the medium through, various modifications and changes can be made.

【0019】各デイスクは、レ−ザ−照射により、10 [0019] Each disk is - The - by the irradiation, 10
mwで初期化を行った後、ライトパワ−12mw,バイアス6mwで記録、消去を繰り返し、記録特性が45d After the initialization was performed at mw, write power -12Mw, recording bias 6MW, repeated erasing, recording characteristics 45d
B以上,消去比25dB以上が保たれる繰り返し回数を測定した。 Or B, or erase ratio 25dB was measured the number of iterations is kept.

【0020】その結果、実施例のデイスクは10万回以上の繰り返しが可能であったが、比較例のデイスクは1 [0020] As a result, disk examples was possible repetition of 100,000 times or more, the disk of the comparative example 1
万5千回程度の繰り返しにより記録特性,消去比ともにそれぞれ45dB,25dB以下に低下した。 15,000 times about repeated by the recording characteristics of each of both erase ratio 45 dB, was reduced to 25dB below.

【0021】また初期記録特性および消去比は実施例でそれぞれ50dB,および40dBであったのに対し、 The contrast Also initial recording characteristic and erasing ratios 50dB respectively in Examples, and was 40 dB,
比較例では、それぞれ49dB,38dBであった。 In the comparative example, respectively 49 dB, was 38 dB.

【0022】 [0022]

【発明の効果】以上説明したように、本発明によればA As described in the foregoing, A according to the present invention
gを含む光記録層をもつ相変化型光記録媒体において、 In phase-change optical recording medium having an optical recording layer containing g,
保護層を2層としAgを含む光記録層側をSiN,Si SiN optical recording layer side containing the protective layer has a two-layer Ag, Si
C,AlN等のチツ化物,炭化物化合物とし、そのが外側をZnSあるいはZnSを含む化合物とすることにより記録、消去特性、繰り返し特性を改善した。 C, multichip products such as AlN, and carbides compounds, recorded by the to the outside with compounds containing ZnS or ZnS, erase characteristics, and improved repetition characteristics.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の光記録媒体の構成を示す断面の模式図。 Schematic cross-sectional view showing a structure of an optical recording medium of the present invention; FIG.

【図2】従来の光記録媒体の構成を示す断面の模式図。 Figure 2 is a schematic cross-sectional view showing a structure of a conventional optical recording medium.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 基板 2 保護層 2−1 保護層 2−2 保護層 3 光記録層 4 保護層 4−1 保護層 4−2 保護層 5 放熱層 1 substrate 2 protective layer 2-1 protective layer 2-2 protective layer 3 an optical recording layer 4 protective layer 4-1 protective layer 4-2 protective layer 5 heat dissipation layer

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 基板上に、少なくとも、銀を含有する光記録層、保護層および放熱層を備え、光記録層に光エネルギーを照射することによって、情報の記録、再生、消去を行う、相変化型光記録媒体において、保護層が2層からなり、光記録層に隣接した保護層が窒化物または炭化物であり、その外側の保護層が硫化亜鉛または硫化亜鉛を含む複合化合物であることを特徴とする相変化型光記録媒体。 To 1. A substrate, at least, an optical recording layer containing silver, a protective layer and the heat dissipation layer, by irradiating light energy on the optical recording layer, performs recording of information, reproducing, erasing phase in change optical recording medium, the protective layer comprises two layers, a protective layer is a nitride or a carbide adjacent to the optical recording layer, the protective layer of the outside thereof a composite compound comprising zinc sulfide or zinc sulfide phase-change optical recording medium characterized.
JP1770392A 1992-02-03 1992-02-03 Phase-change optical recording medium Expired - Fee Related JP3129497B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP1770392A JP3129497B2 (en) 1992-02-03 1992-02-03 Phase-change optical recording medium

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JPH05217211A true true JPH05217211A (en) 1993-08-27
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US5498507A (en) * 1994-03-29 1996-03-12 Tdk Corporation Optical recording media
WO1997034298A1 (en) * 1996-03-11 1997-09-18 Matsushita Electric Industrial Co., Ltd. Optical data recording medium, method of producing the same and method of reproducing/erasing record
EP0945860A2 (en) * 1998-03-26 1999-09-29 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for recording and reproducing information thereon
US6268034B1 (en) 1998-08-05 2001-07-31 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus
US6343062B1 (en) 1997-09-26 2002-01-29 Matsushita Electric Industrial Co., Ltd Optical disk device and optical disk for recording and reproducing high-density signals
US6388984B2 (en) 1997-08-28 2002-05-14 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and its recording and reproducing method
JP2003507218A (en) * 1999-08-18 2003-02-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Rewritable optical information recording medium
JP2003511267A (en) * 1999-10-04 2003-03-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Optical recording medium having a GeSbTe recording layer
US6555196B2 (en) 1995-03-08 2003-04-29 Ricoh Company, Ltd. Optical data recording medium and material for heat-resistant protection layer for the same
USRE38305E1 (en) 1992-10-09 2003-11-11 Asahi Glass Company Ltd. LCD device including an illumination device having a polarized light separating sheet between a light guide and the display
WO2004032131A1 (en) * 2002-10-02 2004-04-15 Mitsubishi Chemical Corporation Optical recording medium
US6764736B2 (en) 2001-07-12 2004-07-20 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and recording method using the same
US6821707B2 (en) 1996-03-11 2004-11-23 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
US6846611B2 (en) * 2001-02-28 2005-01-25 Ricoh Company, Ltd. Phase-change optical recording medium
EP0888616B1 (en) * 1996-12-24 2005-06-29 Philips Electronics N.V. Optical recording medium with phase-change recording layer
US7008681B2 (en) 2002-03-15 2006-03-07 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and manufacturing method and recording/reproducing method for the same
US7037413B1 (en) 1996-03-11 2006-05-02 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
US7074471B2 (en) 2003-03-27 2006-07-11 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, method for producing the medium, and method and apparatus for recording information using the medium
US7288224B2 (en) 1995-03-31 2007-10-30 Ricoh Company, Ltd. Method of producing a sputtering target
US7304930B2 (en) 2001-09-12 2007-12-04 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and recording method using the same
WO2008035522A1 (en) 2006-09-22 2008-03-27 National Institute Of Advanced Industrial Science And Technology Optical recording medium
EP0897177B1 (en) * 1997-08-12 2010-03-10 Panasonic Corporation Optical information recording medium, method for producing the same, and method for recording and reproducing optical information

Cited By (27)

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USRE38305E1 (en) 1992-10-09 2003-11-11 Asahi Glass Company Ltd. LCD device including an illumination device having a polarized light separating sheet between a light guide and the display
US5498507A (en) * 1994-03-29 1996-03-12 Tdk Corporation Optical recording media
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