JP3103542U - Plating solution stirrer - Google Patents

Plating solution stirrer Download PDF

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Publication number
JP3103542U
JP3103542U JP2004000095U JP2004000095U JP3103542U JP 3103542 U JP3103542 U JP 3103542U JP 2004000095 U JP2004000095 U JP 2004000095U JP 2004000095 U JP2004000095 U JP 2004000095U JP 3103542 U JP3103542 U JP 3103542U
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plating
plating solution
wafer
tank
nitrogen gas
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Expired - Fee Related
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JP2004000095U
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Japanese (ja)
Inventor
礒野忠雄
吉岡信雄
神田正行
雅一 牧川
小薗井健次郎
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株式会社エムデーシー
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Abstract

【目的】ウエハ上に電解メッキによりバンプおよび微細パターンを形成するメッキ装置においてメッキ液の流れを制御する装置を提供し均一なメッキの膜厚分布を可能にする。
ウエハ面に付着している泡をメッキ液中に窒素ガスを噴出させることにより生じる泡で除去することを可能にする。
【構成】メッキ槽の底面に配置したメッキ液流入口より流入するメッキ液はウエハ装着カセットに装着されたウエハの表面に沿って流れカセットの上部にあけられたスリットより流れ出る。流れ出たメッキ液はポンプに吸い込まれポンプにより加圧されフィルタを通り再びメッキ液流出口より送り込まれ上記の循環を繰り返す。
この循環によりウエハ表面上のメッキ液をたえずリフレッシュすることにより良質なメッキを施すことが出来る。
またメッキ槽の底面に配置された窒素ガス噴出口より窒素ガスを放出する事により生ずる大きな泡によりウエハ表面に付着した小さな泡を捕捉し除去する。

【選択図】図1
An object of the present invention is to provide an apparatus for controlling a flow of a plating solution in a plating apparatus for forming bumps and fine patterns on a wafer by electrolytic plating, thereby enabling a uniform plating film thickness distribution.
It is possible to remove bubbles adhering to the wafer surface by bubbles generated by ejecting nitrogen gas into the plating solution.
[Constitution] A plating solution flowing from a plating solution inlet disposed on a bottom surface of a plating tank flows along a surface of a wafer mounted on a wafer mounting cassette and flows out from a slit formed in an upper portion of the cassette. The plating solution that has flowed out is sucked into the pump, pressurized by the pump, passed through the filter, and sent again from the plating solution outlet to repeat the above-described circulation.
High-quality plating can be performed by constantly refreshing the plating solution on the wafer surface by this circulation.
Also, small bubbles attached to the wafer surface are captured and removed by large bubbles generated by discharging nitrogen gas from a nitrogen gas outlet disposed on the bottom surface of the plating tank.

[Selection diagram] Figure 1

Description

本考案はウエハに電解メッキを施す装置でメッキ液を攪拌させる装置に関る。 The present invention relates to an apparatus for agitating a plating solution in an apparatus for electroplating a wafer.

電解メッキを行うためにはメッキされる面にたえず十分攪拌されたメッキ液を供給することが良質なメッキを行うためには必要である。ウエハの様な面状のものにメッキを行う場合ウエハ面に均一なメッキ液の流れにさらす必要があるが従来の攪拌方式は十分にその目的を達していない。
また微少な泡がウエハ面に付着した場合この除去には多大な装置が必要となる。
In order to perform electrolytic plating, it is necessary to constantly supply a sufficiently stirred plating solution to a surface to be plated in order to perform high-quality plating. When plating a planar object such as a wafer, it is necessary to expose the wafer surface to a uniform flow of a plating solution, but the conventional stirring method has not sufficiently achieved its purpose.
If minute bubbles adhere to the wafer surface, a large amount of equipment is required for removing the bubbles.

本考案は簡単な装置で安価にウエハ面に均一なメッキ液の流れを与えるものである。
またウエハ面に付着した微少な泡の除去はメッキ液の攪拌等の従来の方法では除去が困難である。
The present invention provides a uniform plating solution flow on a wafer surface at a low cost with a simple apparatus.
Further, it is difficult to remove minute bubbles attached to the wafer surface by a conventional method such as stirring of a plating solution.

本考案はメッキ槽(1)の低部に配置したメッキ液の流入口(2)とメッキ液の流出口となるスリット(5)を設けたウエハを装着するウエハ装着カセット(4)、スリット(5)より流れ出た液を回収するために置けたメッキ液回収口(6)、回収されたメッキ液を循環のため再びメッキ液をフィルタ(8)を介して流入口(2)へ送り出すポンプ(7)、また微少な泡を除去するためのメッキ槽の低部に配置された窒素ガスの噴出口(9)より構成される。 According to the present invention, a wafer mounting cassette (4) for mounting a wafer provided with a plating solution inlet (2) and a slit (5) serving as a plating solution outlet disposed in a lower portion of a plating tank (1), a slit ( 5) A plating liquid recovery port (6) which is provided for collecting the liquid flowing out from the pump, and a pump which sends the plating liquid again to the inflow port (2) through the filter (8) for circulation of the recovered plating liquid ( 7) and a nitrogen gas outlet (9) arranged at the lower part of the plating tank for removing fine bubbles.

本考案のメッキ槽におけるメッキ液循環手段によりメッキの膜厚分布が良好になりまた泡によるボイド及びメッキの欠陥の少ないメッキが可能となる。 The plating solution circulation means in the plating bath of the present invention makes it possible to improve the plating film thickness distribution and to perform plating with less voids and plating defects due to bubbles.

本考案のメッキ液の流れがウエハ面で一様にせしめるためにメッキ槽(1)の低部に配置したライン状に配置した小穴からなるメッキ液流入口(2)よりメッキ槽(1)に流入したメッキ液はウエハ装着カセット(4)に設けられたスリット(5)から流出する。このスリット(5)は前記流入口(2)対向する形で設置し流入口(2)よりメッキ槽(1)に流れ込んだメッキ液は帯状の流れとなりウエハ面に均一なメッキ液の流れを供する。
スリット(5)から流れ出たメッキ液はメッキ槽(1)に設けられたメッキ液回収口よりポンプ(7)により吸引されポンプ(7)で加圧されメッキ液流出口(2)へ送られメッキ液は循環が繰り返される。
またメッキ槽(1)の低部に設置された窒素ガス噴出口(9)より噴出された窒素ガスは大きな泡となり浮上しやすくなりウエハ面に接触しながら浮上しこの時ウエハ面に付着している泡を捕捉し除去する。この時の窒素ガスはメッキ槽(1)の空間部に充満しメッキ液の劣化、メッキされるものの保護のために行う窒素パージ機能をも合わせ持つ。
In order to make the flow of the plating solution of the present invention uniform on the wafer surface, a plating solution inlet (2) consisting of small holes arranged in a line arranged in the lower part of the plating bath (1) is introduced into the plating bath (1). The flowing plating solution flows out of a slit (5) provided in the wafer mounting cassette (4). The slit (5) is installed so as to oppose the inlet (2), and the plating solution flowing into the plating tank (1) from the inlet (2) becomes a band-like flow to provide a uniform plating solution flow on the wafer surface. .
The plating solution flowing out of the slit (5) is sucked from a plating solution recovery port provided in the plating tank (1) by a pump (7), pressurized by a pump (7), sent to a plating solution outlet (2), and plated. The circulation of the liquid is repeated.
Further, the nitrogen gas jetted from the nitrogen gas jet port (9) installed in the lower part of the plating tank (1) becomes a large bubble and easily floats, floats while being in contact with the wafer surface, and adheres to the wafer surface at this time. Capture and remove foam. At this time, the nitrogen gas fills the space of the plating tank (1) and also has a nitrogen purging function for protecting the plating solution from deterioration and plating.

図1の本考案のメッキ槽(1)の中に、メッキ液流入口(2)、ウエハ装着カセット(4)、スリット(5)、メッキ液回収口(6)、ポンプ(7)及びフィルタ(8)を図1に示されるような配置のメッキ液の循環径路を設けることによりウエハ装着カセット(4)に装着されたウエハ(3)の面に一様なメッキ液の流れが供せられ良好なメッキの膜厚分布が得られる。また窒素ガス噴出口(9)よりメッキ開始前、及びメッキ開始後に間歇的に窒素ガスを噴出させることにより生じる泡がウエハ(3)に付着している小さな泡を捕捉してこれを除去する。またこの窒素ガスは窒素ガスパージの働きをも持つ。 In the plating tank (1) of the present invention of FIG. 1, a plating solution inlet (2), a wafer mounting cassette (4), a slit (5), a plating solution recovery port (6), a pump (7), and a filter ( 8) By providing a plating solution circulation path arranged as shown in FIG. 1, a uniform plating solution flow can be provided on the surface of the wafer (3) mounted on the wafer mounting cassette (4). A good plating thickness distribution can be obtained. Also, bubbles generated by intermittently ejecting nitrogen gas from the nitrogen gas ejection port (9) before and after plating start capture small bubbles attached to the wafer (3) and remove them. This nitrogen gas also has a function of purging nitrogen gas.

半導体パッケージの高集積化。小型化にともないウエハ上に形成された集積回路の接続ポイントとなるバンプの形成装置への需要がますます高まっている。そこで電解メッキ法でバンプを形成する上で形成されたバンプの品位例えば高さの均一性、欠陥を少なくする等に効果のある本考案は産業上多大の利用価値がある。 High integration of semiconductor packages. Along with miniaturization, a demand for an apparatus for forming a bump serving as a connection point of an integrated circuit formed on a wafer is increasing. Therefore, the present invention, which is effective in forming bumps by the electrolytic plating method, such as the quality of bumps formed, for example, the uniformity of height and the reduction of defects, has great industrial value.

本考案のメッキ槽の説明図である。FIG. 3 is an explanatory view of the plating tank of the present invention.

符号の説明Explanation of reference numerals

(1)・・メッキ槽 (2)・・メッキ液流入口 (3)・・ウエハ
(4)・・ウエハ装着カセット (5)・・スリット (6)・・メッキ液回収口
(7)・・ポンプ (8)・・フィルタ (9)・・窒素ガス噴出口 (10)・・アノード
(1) Plating tank (2) Plating solution inlet (3) Wafer
(4) Wafer loading cassette (5) Slit (6) Plating solution recovery port (7) Pump (8) Filter (9) Nitrogen gas jet (10) Anode

Claims (2)

ウエハを縦に配置した浸漬式メッキ装置においてメッキ槽(1)の低部に配置したライン状に配置した小穴からなるメッキ液流入口(2)と槽を2分する着脱可能な仕切り板を設けこの仕切り板面上の前記メッキ液の流入口(2)側にウエハ(3)の設置を行うことが出来るウエハ装着カッセット(4)を設けこのカセットの上部に前記流入口(2)と平行にあけられたスリット(5)を設けこのスリットからメッキ液がオーバーフローする。
オーバーフローされたメッキ液は前記メッキ槽(1)の前記ウエハ装着カセット(4)のウエハが装着される反対側に流れ込む。流れ込んだメッキ液は前記メッキ槽(1)の底面に設けられたメッキ液回収口(6)よりポンプ(7)により吸い込まれる。吸い込まれたメッキ液はポンプ(7)により加圧されフィルタ(8)を介して再び前記流入口(2)へと送られる。以上のメッキ液の循環によりメッキ液の流速がウエハ面に一様に施される縦型ウエハメッキ装置。
In a dipping type plating apparatus in which wafers are arranged vertically, a plating solution inlet (2) consisting of small holes arranged in a line arranged in the lower part of a plating tank (1) and a detachable partition plate for dividing the tank into two parts are provided. A wafer mounting cassette (4) on which a wafer (3) can be installed is provided on the side of the plating solution inlet (2) on the partition plate surface, and the cassette is parallel to the inlet (2) above the cassette. The plating solution overflows from the slit (5).
The overflowed plating solution flows into the plating tank (1) on the opposite side of the wafer mounting cassette (4) on which the wafer is mounted. The flowing plating solution is sucked by a pump (7) from a plating solution recovery port (6) provided on the bottom surface of the plating tank (1). The sucked plating solution is pressurized by the pump (7) and sent to the inlet (2) again through the filter (8). A vertical wafer plating apparatus in which the flow rate of the plating solution is uniformly applied to the wafer surface by the circulation of the plating solution.
請求項1の縦型メッキ装置のメッキ槽において槽を2分するウエハ装着カセット(4)のメッキ液流入口(2)側の低部にメッキ液流入口(2)と平行に配置しライン状に配置した小穴からなる窒素ガス噴出し口(9)を設け適宜この噴出し口(9)より窒素ガスを噴出することにより泡を発生させこの泡によりウエハに付着した小さな泡を捕捉し除去させる縦型ウエハメッキ装置。
In the plating tank of the vertical plating apparatus according to claim 1, the wafer mounting cassette (4), which divides the tank into two parts, is arranged in a lower part on the side of the plating solution inlet (2) side in parallel with the plating solution inlet (2). A nitrogen gas outlet (9) consisting of a small hole arranged in the nozzle is provided, and nitrogen gas is spouted from the outlet (9) as appropriate to generate bubbles, and the bubbles capture and remove small bubbles attached to the wafer. Vertical wafer plating equipment.
JP2004000095U 2004-01-13 2004-01-13 Plating solution stirrer Expired - Fee Related JP3103542U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853445A (en) * 2021-01-08 2021-05-28 上海戴丰科技有限公司 Horizontal electroplating pool with laterally-pulled anode for wafer and horizontal electroplating device for wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853445A (en) * 2021-01-08 2021-05-28 上海戴丰科技有限公司 Horizontal electroplating pool with laterally-pulled anode for wafer and horizontal electroplating device for wafer
CN112853445B (en) * 2021-01-08 2022-08-26 上海戴丰科技有限公司 Horizontal electroplating pool with laterally-pulled anode for wafer and horizontal electroplating device for wafer

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