JP3076880B2 - Semiconductor device for light valve and method of manufacturing the same - Google Patents
Semiconductor device for light valve and method of manufacturing the sameInfo
- Publication number
- JP3076880B2 JP3076880B2 JP6506591A JP6506591A JP3076880B2 JP 3076880 B2 JP3076880 B2 JP 3076880B2 JP 6506591 A JP6506591 A JP 6506591A JP 6506591 A JP6506591 A JP 6506591A JP 3076880 B2 JP3076880 B2 JP 3076880B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- light valve
- silicon substrate
- crystal silicon
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/105—Materials and properties semiconductor single crystal Si
Landscapes
- Liquid Crystal (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は光弁装置、特にアクティ
ブマトリクス型光弁装置用半導体装置及びその製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light valve device, and more particularly to a semiconductor device for an active matrix light valve device and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来、光弁装置としては、ポリシリコン
又はアモルファスシリコンをスイッチトランジスタとし
たものが知られていた。2. Description of the Related Art Hitherto, as a light valve device, a device using polysilicon or amorphous silicon as a switch transistor has been known.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記の
光弁装置では駆動回路が内蔵されておらず、別に製造し
た駆動用ＩＣと外部で接続する必要があった。このた
め、システムとしては実装コストが上乗せされ、また接
続部は、１００μｍ以上のピッチでパッド部を形成しな
ければならないため、装置の小型化ができないという問
題点があった。However, the above-described light valve device does not include a drive circuit, and needs to be externally connected to a separately manufactured drive IC. For this reason, there is a problem that the mounting cost is added to the system, and the connecting portion must be formed with the pad portion at a pitch of 100 μm or more, so that the device cannot be downsized.
【０００４】また、一部ポリシリコンを材料に駆動回路
内蔵型の光弁装置も知られているが、駆動回路もポリシ
リコンで形成されているため、高速な回路を形成できな
いという問題点があった。本発明は、上記課題を解消し
て高速動作可能な駆動回路を内蔵した小型の光弁装置を
形成できる光弁用半導体装置及びその製造方法を提供す
ることを目的とする。There is also known a light valve device incorporating a drive circuit partially using polysilicon as a material. However, since the drive circuit is also formed of polysilicon, there is a problem that a high-speed circuit cannot be formed. Was. SUMMARY OF THE INVENTION It is an object of the present invention to provide a light valve semiconductor device capable of forming a small light valve device incorporating a drive circuit capable of high-speed operation while solving the above-mentioned problems, and a method of manufacturing the same.
【０００５】[0005]
【課題を解決するための手段】本発明の半導体装置が上
記目的を達成するために採用した主たる手段は、画素の
スイッチトランジスタをポリシリコン又はアモルファス
シリコンにより形成し、同一基板上に単結晶シリコンよ
り成る駆動回路を形成してあることを特徴とする。The main means adopted by the semiconductor device of the present invention to achieve the above object is that a switch transistor of a pixel is formed of polysilicon or amorphous silicon and is formed of single crystal silicon on the same substrate. Is formed.
【０００６】製造方法としては、単結晶シリコン基板上
に画素領域と駆動回路領域とを形成し、画素領域下の単
結晶シリコン基板を除去し、光透過を可能にしているこ
とを特徴とする。The manufacturing method is characterized in that a pixel region and a driving circuit region are formed on a single crystal silicon substrate, and the single crystal silicon substrate below the pixel region is removed to enable light transmission.
【０００７】[0007]
【作用】上述したように、本発明は、従来のポリシリコ
ン又はアモルファスシリコンを用いた光弁装置に比べ
て、小型、高速な光弁装置を形成することのできる、光
弁用半導体装置を得ることができる。As described above, the present invention provides a light valve semiconductor device capable of forming a small and high-speed light valve device as compared with a conventional light valve device using polysilicon or amorphous silicon. be able to.
【０００８】[0008]
【実施例】以下、図面を参照して本発明の好適な実施例
を説明する。図１は本発明の半導体装置の一実施例を示
す模式的断面図である。単結晶シリコン基板１０１上に
駆動回路素子１０３が形成され、画素領域１０８におい
ては、フィールド酸化膜１０２上にスイッチトランジス
タ１０４が形成されている。なお、図示しないが駆動回
路素子１０３とスイッチトランジスタ１０４は、互いに
配線１０５で接続されている。また画素領域１０８下面
の単結晶シリコン基板１０１は除去され、補強のために
透明材料１０９が充填されている。Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a schematic sectional view showing one embodiment of the semiconductor device of the present invention. A drive circuit element 103 is formed on a single crystal silicon substrate 101, and a switch transistor 104 is formed on a field oxide film 102 in a pixel region 108. Although not shown, the drive circuit element 103 and the switch transistor 104 are connected to each other by a wiring 105. Further, the single crystal silicon substrate 101 on the lower surface of the pixel region 108 is removed, and a transparent material 109 is filled for reinforcement.
【０００９】図１の実施例によれば、駆動回路素子１０
３は単結晶シリコン上に形成されており、高速動作が可
能である。また、スイッチトランジスタ１０４と駆動回
路素子１０３は、ＩＣプロセス中に互いに配線されてい
るので、数μｍピッチでの接続が可能であり、従来は光
弁装置と外部のＩＣとを接続する場合に１００μｍ程度
のピッチが必要であることに比べると、著しい微細化が
可能であり、接続部が無いので信頼性も向上する。According to the embodiment shown in FIG.
3 is formed on single-crystal silicon, and can operate at high speed. Further, since the switch transistor 104 and the drive circuit element 103 are wired to each other during the IC process, they can be connected at a pitch of several μm. Conventionally, when connecting the light valve device to an external IC, it is 100 μm. Compared to the necessity of a small pitch, remarkable miniaturization is possible, and reliability is improved because there is no connecting portion.
【００１０】図２（ａ）〜（ｃ）は、図１の実施例にか
かる光弁用半導体装置の製造方法の工程順断面図であ
る。図２（ａ）に示すように、通常のＩＣプロセスを用
い、単結晶シリコン基板１０１上に駆動回路素子１０３
及びスイッチトランジスタ１０４を形成する。詳しくは
フィールド酸化膜１０２を形成した後、ポリシリコン又
はアモルファスシリコンを成膜し、画素領域１０８にの
みスイッチトランジスタ１０４を形成するためにパター
ニングして残し、続いて駆動回路素子１０３に従ってＩ
Ｃプロセスによりゲート電極と一対のソース・ドレイン
領域を有するＭＯＳ型トランジスタを形成する。また、
ＩＣプロセス中、適当な工程で単結晶シリコン基板１０
１の裏面に窒化シリコン膜１０７を形成し、両面アライ
ナー等を用いてパターニングし、画素領域１０８に相当
する部分をエッチング除去しておく。FIGS. 2A to 2C are sectional views in the order of steps of a method for manufacturing a semiconductor device for a light valve according to the embodiment of FIG. As shown in FIG. 2A, a drive circuit element 103 is formed on a single crystal silicon substrate 101 by using a normal IC process.
And the switch transistor 104 is formed. More specifically, after the field oxide film 102 is formed, polysilicon or amorphous silicon is formed, and is patterned and left to form the switch transistor 104 only in the pixel region 108.
A MOS transistor having a gate electrode and a pair of source / drain regions is formed by the C process. Also,
During the IC process, a single crystal silicon substrate 10
A silicon nitride film 107 is formed on the back surface of the substrate 1 and patterned using a double-sided aligner or the like, and a portion corresponding to the pixel region 108 is removed by etching.
【００１１】次に、図２（ｂ）に示すように窒化シリコ
ン膜１０７をマスクとしてＫＯＨ溶液により単結晶シリ
コン基板１０１をエッチング除去する。このエッチング
はフィールド酸化膜１０２が露出した時点で進行が止ま
る。エッチャントにはＫＯＨの他、ヒドラジン溶液を用
いてもよい。エッチングにより、画素領域１０８が薄膜
化し強度が保てない場合は、あらかじめ保護膜１０６上
に接着剤等を用いて支持用基板を固着しておくとよい。Next, as shown in FIG. 2B, using the silicon nitride film 107 as a mask, the single crystal silicon substrate 101 is removed by etching with a KOH solution. This etching stops when the field oxide film 102 is exposed. A hydrazine solution other than KOH may be used as an etchant. When the pixel region 108 is thinned by etching and the strength cannot be maintained, a supporting substrate may be fixed on the protective film 106 in advance using an adhesive or the like.
【００１２】次に、図２（ｃ）に示すように画素領域１
０８下面の凹部に透明材料１０９を充填する。透明材料
１０９は、例えば樹脂又は無機のＳｉＯ2 を主材とする
ものからなり、スピンオン法又はポッティング法などに
より塗布する。塗布後には、熱処理又は紫外線処理等を
施して完全に硬化させる。以上により図１に示す光弁用
半導体装置が完成する。Next, as shown in FIG.
08 is filled with the transparent material 109 in the concave portion. The transparent material 109 is made of, for example, resin or inorganic SiO 2 as a main material, and is applied by a spin-on method, a potting method, or the like. After the application, heat treatment or ultraviolet treatment is performed to completely cure. Thus, the light valve semiconductor device shown in FIG. 1 is completed.
【００１３】[0013]
【発明の効果】上述したように本発明によれば、従来の
アモルファスシリコンやポリシリコンを用いた光弁装置
に比べて、小型、高速動作可能な光弁装置を形成するこ
とのできる光弁用半導体装置を安価に製造することがで
きる。As described above, according to the present invention, a light valve device capable of forming a light valve device which is small and can operate at high speed as compared with a conventional light valve device using amorphous silicon or polysilicon. A semiconductor device can be manufactured at low cost.
【図１】本発明の半導体装置の一実施例を示す模式的断
面図である。FIG. 1 is a schematic sectional view showing one embodiment of a semiconductor device of the present invention.
【図２】本発明の製造方法を示す模式的部分断面図であ
る。FIG. 2 is a schematic partial cross-sectional view illustrating the manufacturing method of the present invention.
【符号の説明】 １０１ 単結晶シリコン基板 １０２ フィールド酸化膜 １０３ 駆動回路素子 １０４ スイッチトランジスタ １０５ 配線 １０６ 保護膜 １０７ シリコン窒化膜 １０８ 画素領域 １０９ 透明材料DESCRIPTION OF SYMBOLS 101 single crystal silicon substrate 102 field oxide film 103 drive circuit element 104 switch transistor 105 wiring 106 protective film 107 silicon nitride film 108 pixel region 109 transparent material
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G02F 1/1368 H01L 27/04 H01L 27/12 H01L 29/786 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G02F 1/1368 H01L 27/04 H01L 27/12 H01L 29/786
Claims (8)
と、 前記単結晶シリコン基板の一部に透明材料が充填された
凹部を有し、前記透明材料上のフィールド酸化膜と前記
フィールド酸化膜上にアモルファスシリコンまたはポリ
シリコンからなり、前記駆動回路素子と電気的に接続さ
れた、画素のスイッチトランジスタとからなる画素領域
とを有する光弁用半導体装置。 1. A driving circuit element on a single crystal silicon substrate
And a portion of the single crystal silicon substrate was filled with a transparent material.
Having a recess, a field oxide film on the transparent material and the
Amorphous silicon or poly on field oxide
Made of silicon and electrically connected to the drive circuit element
Pixel region consisting of a pixel switch transistor
A light valve semiconductor device comprising:
回路素子に接し、前記単結晶シリコン基板の上面に延設
されている光弁用半導体装置。 2. An end of said field oxide film is said drive
In contact with the circuit element, extending on the upper surface of the single crystal silicon substrate
Semiconductor devices for light valves.
素子を有する面と反対の面にシリコン窒化膜を有する請
求項１記載の光弁用半導体装置。 3. The driving circuit for driving the single crystal silicon substrate.
A silicon nitride film on the surface opposite to the device
The light valve semiconductor device according to claim 1.
化膜を形成し、前記フィールド酸化膜上の一部にポリシFormed on the field oxide film.
リコンまたはアモルファスシリコンを形成し、前記ポリForm silicon or amorphous silicon
シリコンまたはアモルファスシリコン上にスイッチトラSwitch traverse on silicon or amorphous silicon
ンジスタを形成し、前記単結晶シリコン基板上面の前記Forming a transistor on the upper surface of the single crystal silicon substrate.
フィールド酸化膜を有しない部分に駆動回路素子を形成Drive circuit elements are formed in areas without field oxide film
する工程と、The process of 前記単結晶シリコン基板の前記スイッチトランジスタをThe switch transistor of the single crystal silicon substrate
有する領域の下面に凹部を形成する工程と、Forming a concave portion on the lower surface of the region having, 前記凹部に透明材料を充填する工程とからなる光弁用半Filling the recess with a transparent material.
導体装置の製造方法。A method for manufacturing a conductor device.
トランジスタを有しない領域の下面にマスクを形成し、Forming a mask on the lower surface of the region having no transistor,
前記単結晶シリコン基板の前記マスクを有しない領域をA region of the single crystal silicon substrate not having the mask
前記フィールド酸化膜が露出するまでエッチングし前記Etching until the field oxide film is exposed,
凹部を形成する請求項４記載の光弁用半導体装置の製造5. The manufacturing of the light valve semiconductor device according to claim 4, wherein the recess is formed.
方法。Method.
項５記載の光弁用半導体装置の製造方法。Item 6. A method for manufacturing a light valve semiconductor device according to Item 5.
ング法による塗布からなる請求項４記載の光弁用半導体5. The semiconductor for a light valve according to claim 4, which is applied by a coating method.
装置の製造方法。Device manufacturing method.
よる硬化を行う請求項７記載の光弁用半導体装置の製造8. A method of manufacturing a semiconductor device for a light valve according to claim 7, wherein the curing is performed by the following method.
方法。Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6506591A JP3076880B2 (en) | 1991-03-28 | 1991-03-28 | Semiconductor device for light valve and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6506591A JP3076880B2 (en) | 1991-03-28 | 1991-03-28 | Semiconductor device for light valve and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04299317A JPH04299317A (en) | 1992-10-22 |
| JP3076880B2 true JP3076880B2 (en) | 2000-08-14 |
Family
ID=13276184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6506591A Expired - Lifetime JP3076880B2 (en) | 1991-03-28 | 1991-03-28 | Semiconductor device for light valve and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3076880B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06222391A (en) * | 1993-01-28 | 1994-08-12 | Canon Inc | Semiconductor device and liquid crystal display device |
| EP0609809B8 (en) * | 1993-02-01 | 2001-11-21 | Canon Kabushiki Kaisha | Liquid crystal display device |
| JP3405364B2 (en) * | 1993-03-08 | 2003-05-12 | セイコーインスツルメンツ株式会社 | Semiconductor device |
-
1991
- 1991-03-28 JP JP6506591A patent/JP3076880B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04299317A (en) | 1992-10-22 |
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