JP3055702B2 - 集積回路内の高周波供給電圧の変動を抑止する能動的バイパス - Google Patents

集積回路内の高周波供給電圧の変動を抑止する能動的バイパス

Info

Publication number
JP3055702B2
JP3055702B2 JP3006346A JP634691A JP3055702B2 JP 3055702 B2 JP3055702 B2 JP 3055702B2 JP 3006346 A JP3006346 A JP 3006346A JP 634691 A JP634691 A JP 634691A JP 3055702 B2 JP3055702 B2 JP 3055702B2
Authority
JP
Japan
Prior art keywords
integrated circuit
transistor
power supply
circuit according
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3006346A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04212512A (ja
Inventor
ゴドフリー メイアー ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JPH04212512A publication Critical patent/JPH04212512A/ja
Application granted granted Critical
Publication of JP3055702B2 publication Critical patent/JP3055702B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/613—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in parallel with the load as final control devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
JP3006346A 1990-01-25 1991-01-23 集積回路内の高周波供給電圧の変動を抑止する能動的バイパス Expired - Lifetime JP3055702B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US469903 1990-01-25
US07/469,903 US5049764A (en) 1990-01-25 1990-01-25 Active bypass for inhibiting high-frequency supply voltage variations in integrated circuits

Publications (2)

Publication Number Publication Date
JPH04212512A JPH04212512A (ja) 1992-08-04
JP3055702B2 true JP3055702B2 (ja) 2000-06-26

Family

ID=23865491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3006346A Expired - Lifetime JP3055702B2 (ja) 1990-01-25 1991-01-23 集積回路内の高周波供給電圧の変動を抑止する能動的バイパス

Country Status (5)

Country Link
US (1) US5049764A (cg-RX-API-DMAC7.html)
EP (1) EP0439230B1 (cg-RX-API-DMAC7.html)
JP (1) JP3055702B2 (cg-RX-API-DMAC7.html)
KR (1) KR910015048A (cg-RX-API-DMAC7.html)
DE (1) DE69121254T2 (cg-RX-API-DMAC7.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701098A (en) * 1995-12-21 1997-12-23 National Semiconductor Corporation AC bypass circuit which provides stabilization of high frequency transient noise
US6441640B1 (en) 2001-01-04 2002-08-27 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance pass-band shunt apparatus
US6456107B1 (en) 2001-01-04 2002-09-24 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance method
US6483341B2 (en) 2001-01-04 2002-11-19 Sun Microsystems, Inc. CMOS-microprocessor chip and package anti-resonance apparatus
FI112560B (fi) * 2001-06-27 2003-12-15 Micro Analog Syst Oy RF-suoja Integroidulla piirillä
JP2006520038A (ja) * 2003-02-14 2006-08-31 ドレッサ、インク オンライン弁診断を実行するための方法、システムおよび記憶媒体
US7283894B2 (en) * 2006-02-10 2007-10-16 Dresser, Inc. System and method for fluid regulation
US7539560B2 (en) * 2007-01-05 2009-05-26 Dresser, Inc. Control valve and positioner diagnostics
US20110090725A1 (en) * 2009-10-20 2011-04-21 Texas Instruments Inc Systems and Methods of Synchronous Rectifier Control
WO2012157155A1 (ja) 2011-05-16 2012-11-22 パナソニック株式会社 参照電圧安定化回路およびそれを備えた集積回路
CN103827766B (zh) * 2011-09-30 2017-03-22 英特尔公司 改进集成电压调节器的设备和方法
US9194884B1 (en) * 2012-08-28 2015-11-24 Maxim Integrated Products, Inc. Integrated circuit with analog device fault detection
WO2017179301A1 (ja) * 2016-04-13 2017-10-19 株式会社ソシオネクスト 参照電圧安定化回路およびこれを備えた集積回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE709376C (de) * 1938-04-30 1941-08-14 Siemens & Halske Akt Ges Schaltungsanordnung mit steilheitsgesteuerten Blindwiderstaenden
US3619659A (en) * 1969-12-02 1971-11-09 Honeywell Inf Systems Integrator amplifier circuit with voltage regulation and temperature compensation
DE2946305A1 (de) * 1979-11-16 1981-05-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Impedanzschaltung mit steuerbarem widerstandswert
DE2946306C2 (de) * 1979-11-16 1987-02-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verstärkerschaltung mit vorgebbarem Wechselstrominnenwiderstand
SE423659B (sv) * 1980-09-26 1982-05-17 Ericsson Telefon Ab L M Kopplingsanordning
GB8321549D0 (en) * 1983-08-10 1983-09-14 British Telecomm Electronic switch
US4739193A (en) * 1986-10-30 1988-04-19 Rca Corporation Drive circuit with limited signal transition rate for RFI reduction
US4740717A (en) * 1986-11-25 1988-04-26 North American Philips Corporation, Signetics Division Switching device with dynamic hysteresis
US4947063A (en) * 1987-10-09 1990-08-07 Western Digital Corporation Method and apparatus for reducing transient noise in integrated circuits
NL8702781A (nl) * 1987-11-20 1989-06-16 Philips Nv Geintegreerde logische schakeling met "hot-carrier-stress"-reduktie en instabiliteiten-demping.
JPH07105446B2 (ja) * 1988-01-11 1995-11-13 株式会社東芝 Ｍｏｓ型半導体装置の入力保護回路
US4894567A (en) * 1988-10-17 1990-01-16 Honeywell Inc. Active snubber circuit
US4939616A (en) * 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US4893212A (en) * 1988-12-20 1990-01-09 North American Philips Corp. Protection of power integrated circuits against load voltage surges

Also Published As

Publication number Publication date
US5049764A (en) 1991-09-17
EP0439230A2 (en) 1991-07-31
DE69121254T2 (de) 1997-01-30
KR910015048A (ko) 1991-08-31
EP0439230B1 (en) 1996-08-14
JPH04212512A (ja) 1992-08-04
US5049764B1 (cg-RX-API-DMAC7.html) 1992-12-15
EP0439230A3 (en) 1993-05-26
DE69121254D1 (de) 1996-09-19

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