JP3011114B2 - Silicon melting crucible - Google Patents
Silicon melting crucibleInfo
- Publication number
- JP3011114B2 JP3011114B2 JP9002521A JP252197A JP3011114B2 JP 3011114 B2 JP3011114 B2 JP 3011114B2 JP 9002521 A JP9002521 A JP 9002521A JP 252197 A JP252197 A JP 252197A JP 3011114 B2 JP3011114 B2 JP 3011114B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- carbon
- silicon
- quartz
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、シリコン単結晶
の引上げに用いられるシリコン溶融用坩堝に関し、さら
に詳しくは引上げ中における坩堝上部の変形を防止した
シリコン溶融用坩堝に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon melting crucible used for pulling a silicon single crystal, and more particularly to a silicon melting crucible in which the upper portion of the crucible is prevented from being deformed during the pulling.
【０００２】[0002]
【従来の技術】シリコン単結晶を製造するには、高純度
シリコン原料を減圧下のアルゴン雰囲気で溶融し、種結
晶を用いて上方に引き上げながら凝固させる方法が多用
されている。2. Description of the Related Art For producing a silicon single crystal, a method of melting a high-purity silicon raw material in an argon atmosphere under reduced pressure and solidifying it while pulling it up using a seed crystal is often used.
【０００３】図４は、引き上げながら原料溶融液を凝固
させるシリコン単結晶製造装置を示す図である。図中の
符号６はシリコン単結晶の引上げ雰囲気を減圧するチャ
ンバーであり、チャンバーの内部には溶融坩堝１が配置
され、坩堝の外側にはこれを囲んで誘導加熱コイルなど
で構成された加熱用ヒーター４が、更にその外側に断熱
材で円筒状に構成された保温筒５が配設されている。溶
融坩堝１内には加熱用ヒーター４により溶融された結晶
形成用材料、つまりシリコン原料の溶融液７が収容され
ている。その溶融液の表面に引上げ棒またはワイヤ10の
先に取り付けた種結晶８の下端を接触させ、この種結晶
を上方に引き上げることによって、その下端に溶融液が
凝固したシリコン単結晶９を成長させていく。FIG . 4 is a view showing a silicon single crystal manufacturing apparatus for solidifying a raw material melt while pulling up. Reference numeral 6 in the figure denotes a chamber for depressurizing the silicon single crystal pulling atmosphere. A melting crucible 1 is disposed inside the chamber, and a heating crucible is surrounded by an induction heating coil and the like outside the crucible. The heater 4 is further provided with a heat retaining cylinder 5 formed of a heat insulating material in a cylindrical shape outside the heater 4. In the melting crucible 1, a crystal forming material melted by the heater 4, that is, a melt 7 of a silicon raw material is contained. The lower end of the seed crystal 8 attached to the tip of the pull rod or wire 10 is brought into contact with the surface of the melt, and the seed crystal is pulled upward to grow a silicon single crystal 9 solidified with the melt at the lower end. To go.
【０００４】このとき溶融坩堝１は回転軸13で支持され
て回転し、一方、シリコン単結晶９は引上げ棒の上部に
設けた回転機構（図示せず）によって駆動され、お互い
に反対方向に回転させられる。また、ガス供給口11から
アルゴンガスを供給し、ガス排気口12から排出する。At this time, the melting crucible 1 rotates while being supported by a rotating shaft 13, while the silicon single crystal 9 is driven by a rotating mechanism (not shown) provided on the upper part of the pulling rod, and rotates in opposite directions to each other. Let me do. Further, argon gas is supplied from the gas supply port 11 and discharged from the gas exhaust port 12.
【０００５】使用される溶融坩堝１は二重構造であり、
内側が石英製の容器２（以下、これを「石英坩堝」とい
う）、外側がカーボン製の容器３（以下、これを「カー
ボン坩堝」という）から構成されており、シリコン単結
晶の引上げ直径が大きくなるにしたがい、石英坩堝２の
直径も大きくなり、加熱のために投入される熱量も増加
し、坩堝の表面温度も高くなる。[0005] The melting crucible 1 used has a double structure,
The inside is composed of a quartz container 2 (hereinafter, referred to as “quartz crucible”) and the outside is composed of a carbon container 3 (hereinafter, referred to as “carbon crucible”). As the size increases, the diameter of the quartz crucible 2 also increases, the amount of heat input for heating increases, and the surface temperature of the crucible also increases.
【０００６】通常、溶融坩堝の上端部は、石英坩堝の側
壁の方がカーボン坩堝の側壁よりも上方に高くなるよう
に構成されている。このため、シリコン単結晶の引上げ
中に高温に曝されたとき、石英坩堝の上部が内側に倒れ
込む変形が生じたり、石英坩堝の自重によって座屈が発
生したりすることがあるが、このような場合にはシリコ
ンの引上げの中止を余儀なくされる。また、シリコン単
結晶の製造中は、その溶融液の表面からSiO ガスが発生
していることから、石英坩堝とカーボン坩堝との間にSi
O ガスが侵入し、カーボン（Ｃ）が珪化反応（SiO ＋Ｃ
→SiC ）してカーボン坩堝の寿命が低下する。Usually, the upper end of the melting crucible is configured such that the side wall of the quartz crucible is higher than the side wall of the carbon crucible. Therefore, when the silicon single crystal is exposed to a high temperature during pulling, the upper portion of the quartz crucible may be deformed to fall inward, or buckling may occur due to the weight of the quartz crucible. In some cases, the pulling of silicon must be stopped. In addition, during the production of silicon single crystal, since SiO 2 gas is generated from the surface of the melt, the silicon is placed between the quartz crucible and the carbon crucible.
O gas invades and carbon (C) undergoes a silicidation reaction (SiO + C
→ SiC) and shorten the life of carbon crucible.
【０００７】図５および図６は、シリコン単結晶の引上
げ中に発生する石英坩堝の変形やカーボン坩堝の珪化部
について説明する図である。図５は、シリコン溶融坩堝
の石英坩堝の上部が内部に倒れ込んだ状態（左側図面）
とカーボン坩堝に珪化部が発生した状態（右側図面）を
示す溶融坩堝の縦断面図である。また、図６は、シリコ
ン溶融坩堝の石英坩堝の自重によって発生した座屈の状
態（左側図面）と湾曲した状態（右側図面）を示す溶融
坩堝の縦断面図である。FIG . 5 and FIG. 6 are views for explaining deformation of the quartz crucible generated during pulling of the silicon single crystal and silicified portions of the carbon crucible. Fig. 5 shows a state where the upper part of the quartz crucible of the silicon melting crucible has fallen inside (left drawing).
FIG. 3 is a longitudinal sectional view of a melting crucible showing a state where a silicified portion is generated in a carbon crucible (right drawing). FIG. 6 is a longitudinal sectional view of the melting crucible showing a buckling state (left drawing) and a curved state (right drawing) generated by the weight of the quartz crucible of the silicon melting crucible.
【０００８】図５において、左側が石英坩堝の上部が内
部に倒れ込んだ倒れ込み部18を示し、右側がカーボン坩
堝の珪化部19を示ている。左側図面に示したように、石
英坩堝の倒れ込んだ内面18' が形成されると、その部分
にSiO ガスが付着し易くなり、SiO ガスが酸化され粒状
のSiO2となってシリコン溶融液に落下する。落下したSi
O2はシリコン単結晶の成長界面まで移動し、やがて単結
晶内に浸入し有転位の要因となるので、無転位結晶の引
上げが困難となる。また、同図の右側に示したように、
カーボン坩堝の上部の石英坩堝との界面19' にが浸入す
ると、カーボン坩堝が珪化され、損傷が著しく再利用が
できなくなる。In FIG . 5 , the left side shows the falling part 18 in which the upper part of the quartz crucible falls down, and the right side shows the silicified part 19 of the carbon crucible. As shown in the drawing on the left, when the inner surface 18 'of the quartz crucible falls down, SiO 2 gas easily adheres to that portion, and the SiO 2 gas is oxidized to granular SiO 2 and falls into the silicon melt. I do. Si that fell
O 2 moves to the growth interface of the silicon single crystal, and eventually penetrates into the single crystal, causing dislocations. Therefore, it is difficult to pull up a dislocation-free crystal. Also, as shown on the right side of FIG.
When the interface 19 'between the upper part of the carbon crucible and the quartz crucible penetrates, the carbon crucible is silicified, and the carbon crucible is significantly damaged and cannot be reused.
【０００９】図６では、左側に石英坩堝の自重によって
発生した座屈部20を示し、右側に高温下での軟化にとも
なって発生した湾曲部21を示ている。このような石英坩
堝の変形が生じた場合であっても、図５に示す倒れ込み
変形と同様に、SiO 付着および粒状SiO2落下にともなっ
て無転位結晶の引上げが困難となる。In FIG . 6 , a buckling portion 20 caused by the weight of the quartz crucible is shown on the left side, and a curved portion 21 caused by softening under high temperature is shown on the right side. Even when such a quartz crucible is deformed, it is difficult to pull up dislocation-free crystals due to the attachment of SiO and the fall of granular SiO 2 , as in the case of the falling deformation shown in FIG .
【００１０】このような問題を解決するため特開昭63-3
15263 号報には、石英坩堝の円筒状側壁の上端に、外側
に広がるフランジが一体に設けられた溶融坩堝が提案さ
れている。しかし、外側に広がるフランジを一体に設け
る加工は煩雑であり、コスト高になる。また、特開平3-
290393号公報には、溶融坩堝の円筒状側壁上端に、これ
を被う石英リングが設けられた溶融坩堝が提案されてい
る。しかし、高温に曝されたとき、石英リングは石英坩
堝と融合し、取り外しできなくなり、この石英リングの
再利用ができないという問題がある。In order to solve such a problem, Japanese Patent Application Laid-Open No.
No. 15263 proposes a melting crucible in which a flange extending outward is integrally provided at the upper end of a cylindrical side wall of the quartz crucible. However, the process of integrally providing the outwardly extending flange is complicated and costly. In addition, JP-A-3-
Japanese Patent Publication No. 290393 proposes a melting crucible in which a quartz ring covering the upper end of a cylindrical side wall of the melting crucible is provided. However, when exposed to a high temperature, the quartz ring fuses with the quartz crucible, cannot be removed, and there is a problem that the quartz ring cannot be reused.
【００１１】また、特開平６−32692号公報には、シリ
コン単結晶の製造において高速引上げを可能とし生産性
の向上を図ることが重要なことから、結晶原料である多
結晶シリコンの充填量を増加させるため、石英坩堝の側
壁上端部に上方が拡大したテーパを設けたシリコン溶融
用坩堝が提案され、特に側壁上端部のテーパ角度は45°
が適しているとされている。しかし、提案された石英坩
堝は、結晶原料の充填量を向上させることだけを意図し
ており、何ら石英坩堝の倒れ込み、座屈等の変形やカー
ボン坩堝の珪化部の発生を防止することを考慮するもの
ではない。例えば、ここで採用するテーパ角度45°の条
件でシリコン単結晶の引上げを実施すると、前記図６の
右側に示すように、石英坩堝の上部が坩堝の内側に向か
って激しく変形し、湾曲部21を形成する。その結果、単
結晶の引上げ領域でのアルゴンガスの流れに乱れが生
じ、溶融液の表面から発生したSiO ガスを効率的に排出
できず、変形した部分に付着した粒状のSiO2が溶融液に
落下し製造される単結晶が有転位化するという問題があ
る。In Japanese Patent Application Laid-Open No. Hei 6-32692, it is important to improve the productivity by enabling high-speed pulling in the production of silicon single crystal. In order to increase the size, a silicon melting crucible provided with a taper whose upper side is enlarged at the upper end of the side wall of the quartz crucible has been proposed.
Is said to be suitable. However, the proposed quartz crucible is only intended to improve the filling amount of the crystal raw material, and does not consider any deformation of the quartz crucible, such as falling down, buckling, etc., and the occurrence of silicified parts of the carbon crucible. It does not do. For example, when the silicon single crystal is pulled under the condition of the taper angle of 45 ° employed here, as shown on the right side of FIG. 6 , the upper part of the quartz crucible is severely deformed toward the inside of the crucible, and the curved portion 21 is deformed. To form As a result, the flow of the argon gas in the pulling region of the single crystal is disturbed, and the SiO 2 gas generated from the surface of the melt cannot be efficiently discharged, and the granular SiO 2 attached to the deformed portion is converted into the melt. There is a problem that dislocation occurs in the single crystal that is produced by dropping.
【００１２】[0012]
【発明が解決しようとする課題】本発明の目的は、シリ
コン単結晶の引上げでの高温雰囲気中においても石英坩
堝上部の倒れ込み、座屈等の変形がなく、またカーボン
坩堝の寿命の延長を可能としたシリコン溶融用坩堝を提
供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to prevent the upper part of a quartz crucible from falling down, buckling, etc. and to extend the life of a carbon crucible even in a high temperature atmosphere caused by pulling a silicon single crystal. It is another object of the present invention to provide a silicon melting crucible.
【００１３】[0013]
【課題を解決するための手段】本発明の要旨は、下記
(1)から(3)のシリコン溶融用坩堝にある。The gist of the present invention is as follows.
It is in the silicon melting crucible of (1) to (3) .
【００１４】(1) 石英坩堝をカーボン坩堝の内部に挿
入した二重構造のシリコン溶融用坩堝であって、前記石
英坩堝の上部が逆円錐帯状の傾斜部を有し、この傾斜部
の角度αが５°以上で30°未満であるシリコン溶融用坩
堝である（図１参照）。[0014] (1) A silicon melting crucible inserted double structure inside the carbon crucible quartz crucible, an upper portion of the quartz crucible have a sloped portion of the inverted cone strip, the inclined portion
Is a silicon melting crucible having an angle α of 5 ° or more and less than 30 ° (see FIG. 1).
【００１５】(2) 石英坩堝をカーボン坩堝の内部に挿
入させたシリコン溶融用坩堝であって、前記石英坩堝お
よびカーボン坩堝の上部に、断面が下方に開いたコの字
形のカーボン製リングが両者に被さって挿入されている
シリコン溶融用坩堝である（図２参照）。 (2) A silicon melting crucible in which a quartz crucible is inserted into a carbon crucible, and a U-shaped carbon ring having a cross section opened downward is provided on the quartz crucible and the carbon crucible. (See FIG. 2 ).
【００１６】(3) 石英坩堝をカーボン坩堝の内部に挿
入したシリコン溶融用坩堝であって、前記石英坩堝およ
びカーボン坩堝の上部に、断面が下方に開いたコの字形
のカーボン製クリップが両者に跨がって断続的に挿入さ
れているシリコン溶融用坩堝である（図３参照）。 (3) A silicon melting crucible in which a quartz crucible is inserted into a carbon crucible, and a U-shaped carbon clip having a cross section opened downward is provided on both the quartz crucible and the carbon crucible. This is a silicon melting crucible that is intermittently inserted over the straddle (see FIG. 3 ).
【００１７】[0017]
【発明の実施の態様】図１は、本発明のシリコン溶融用
坩堝の縦断面を示す図である。本発明の溶融坩堝１は、
同図に示すように、外側のカーボン坩堝３の内部に内側
の石英坩堝２が挿入された二重構造である。そして石英
坩堝２の上部を、外側に開いた傾斜部14として側壁と一
体に設けることによって石英坩堝の剛性が増し、坩堝内
部への倒れ込みをなくすことができ、しかも石英坩堝の
自重によって発生する座屈や湾曲を抑制することができ
る。このとき、傾斜部の角度αは石英坩堝の座屈部およ
び湾曲部の発生状況に影響を与えることから、所定の範
囲で選択すればよく、５〜30°未満とするのが望まし
い。FIG. 1 is a view showing a vertical section of a silicon melting crucible of the present invention. The melting crucible 1 of the present invention comprises:
As shown in the figure, it has a double structure in which the inner quartz crucible 2 is inserted inside the outer carbon crucible 3. By providing the upper portion of the quartz crucible 2 integrally with the side wall as an inclined portion 14 opened to the outside, the rigidity of the quartz crucible is increased, and the crucible can be prevented from falling into the crucible. Bending and bending can be suppressed. At this time, since the angle α of the inclined portion affects the occurrence of the buckling portion and the curved portion of the quartz crucible, it may be selected within a predetermined range, and is desirably 5 to less than 30 ° .
【００１８】石英坩堝の逆円錐帯状の傾斜部角度αが５
°未満であると、石英坩堝の剛性を増して倒れ込みを防
止することが困難になる。さらに、前記図６の左側に示
すように、石英坩堝の中央部において自重によって座屈
部20を発生し易くなる。一方、前述の特開平６−32692
号公報で提案された石英坩堝のように、傾斜部の角度α
が40°を超えると、石英坩堝の曲げ加工が困難になりコ
スト高を招く。しかも、自重による石英坩堝の変形は軽
減できるものの、傾斜部の角度αの増加にともなって引
上げ中の高温条件の下で軟化した石英坩堝の上部が坩堝
の内側に向かって変形することによって、湾曲部21を形
成することがある。したがって、後述する実施例１で示
すように、傾斜部の角度αを５〜30°未満とすることに
よって、前記図６の変形量Ｌで示される石英坩堝の変形
を２cm以下とし、坩堝の変形に起因する有転位化の問題
を解消することができる。The angle α of the inclined portion of the inverted conical band of the quartz crucible is 5
If it is less than °, it is difficult to increase the rigidity of the quartz crucible and prevent the crucible from falling down. Further, as shown on the left side of FIG. 6, the buckling portion 20 is easily generated by its own weight at the center of the quartz crucible. On the other hand, the aforementioned JP-A-6-32692
As in the case of the quartz crucible proposed in
When the angle exceeds 40 °, bending of the quartz crucible becomes difficult, resulting in high cost. In addition, although the deformation of the quartz crucible due to its own weight can be reduced, the upper part of the quartz crucible softened under the high temperature conditions during pulling up with the increase of the angle α of the inclined portion deforms toward the inside of the crucible, causing The part 21 may be formed. Accordingly, as shown in Example 1 to be described later, by the angle α of the inclined portion to less than. 5 to 30 °, the deformation of the quartz crucible represented by deformation amount L of FIG. 6 and 2cm or less, the deformation of the crucible Can eliminate the problem of dislocations.
【００１９】図２は、本発明の別態様のシリコン溶融用
坩堝の縦断面を示す図である。本発明の溶融坩堝１は、
同図に示すように、溶融坩堝の側壁上部に断面コの字形
のカーボンリング16を、石英坩堝２とカーボン坩堝３と
の側壁上部を挟み被せて挿入し、構成する。コの字形の
カーボンリングを挿入することによって、石英坩堝の剛
性が増し、坩堝内部への倒れ込みをなくすことができ、
またカーボン坩堝の珪化反応を防止することができる。FIG . 2 is a view showing a longitudinal section of a silicon melting crucible according to another embodiment of the present invention. The melting crucible 1 of the present invention comprises:
As shown in the figure, a carbon ring 16 having a U-shaped cross section is inserted into the upper portion of the side wall of the melting crucible with the upper portion of the side wall of the quartz crucible 2 and the carbon crucible 3 interposed therebetween. By inserting a U-shaped carbon ring, the rigidity of the quartz crucible increases, and it is possible to prevent the quartz crucible from falling into the crucible,
Further, silicification reaction of the carbon crucible can be prevented.
【００２０】図３は、本発明の別態様のシリコン溶融用
坩堝の縦断面を示す図である。本発明の溶融坩堝１は、
同図に示すように、溶融坩堝の側壁上部に断面コの字形
のカーボンクリップ17を、石英坩堝２とカーボン坩堝３
との側壁上部を断続的に挟み、構成する。カーボンクリ
ップを断続的に挿入することによって、石英坩堝の剛性
が増し、坩堝内部への倒れ込みをなくすことができる。FIG . 3 is a diagram showing a longitudinal section of a silicon melting crucible according to another embodiment of the present invention. The melting crucible 1 of the present invention comprises:
As shown in the figure, a carbon clip 17 having a U-shaped cross section is provided on the upper part of the side wall of the melting crucible,
Is intermittently sandwiched between the upper portions of the side walls. By intermittently inserting the carbon clip, the rigidity of the quartz crucible is increased, and it is possible to prevent the quartz crucible from falling into the crucible.
【００２１】カーボンクリップの長さは、使用する坩堝
寸法によって異なるが、例えば直径22 インチ坩堝の場
合には長さを 50 mm程度とし、円周に６個程度設けるの
が望ましい。The length of the carbon clip varies depending on the size of the crucible to be used. For example, in the case of a 22-inch diameter crucible, it is desirable to set the length to about 50 mm and provide about six pieces on the circumference.
【００２２】[0022]
【実施例】（実施例１） 図１に示す本発明の溶融用坩堝を配置した図４に示すシ
リコン単結晶製造装置を用い、直径８インチの単結晶を
製造した。内径560 mm、高さ360 mmの石英坩堝を使用
し、100 kgの多結晶シリコンを溶融し、 1000 mm長さの
単結晶を製造した。このとき、逆円錐帯状の傾斜部の角
度αを２〜60°の範囲で変動させ、各条件でそれぞれ10
本の単結晶の製造を行い、石英坩堝の変形量Ｌ（図６参
照）および無転位化率（％）を測定した。その測定結果
を表１に示す。ただし、無転位化率（％）は単結晶の直
胴部の引上げ量に対する無転位単結晶量の比率を示す。Example 1 An 8-inch diameter single crystal was manufactured using the silicon single crystal manufacturing apparatus shown in FIG. 4 in which the melting crucible of the present invention shown in FIG. 1 was arranged. Using a quartz crucible having an inner diameter of 560 mm and a height of 360 mm, 100 kg of polycrystalline silicon was melted to produce a 1000 mm long single crystal. At this time, the angle α of the inverted conical band-shaped inclined portion was changed in the range of 2 to 60 °, and 10 ° for each condition.
The single crystal was manufactured, and the deformation L (see FIG. 6 ) and the dislocation-free ratio (%) of the quartz crucible were measured. Table 1 shows the measurement results. Here, the dislocation-free ratio (%) indicates the ratio of the amount of dislocation-free single crystals to the amount of pulling of the straight body of the single crystal.
【００２３】[0023]
【表１】 [Table 1]
【００２４】表１の結果から明らかなように、傾斜部の
角度αを５〜30°未満の範囲で選択する。これにによっ
て、石英坩堝の変形を２cm以下と低減させて、引上げら
れる単結晶の有転位化を防止することができる。[0024] As apparent from the results in Table 1, you select the angle α of the inclined portion in a range of less than. 5 to 30 °. Thereby, the deformation of the quartz crucible can be reduced to 2 cm or less, and dislocation of the pulled single crystal can be prevented.
【００２５】（実施例２）図２ または図３に示す本発明の溶融用坩堝を配置した図
４に示すシリコン単結晶製造装置を用い、直径８インチ
の単結晶を製造した。内径560 mm、高さ360 mmの石英坩
堝を使用し、100 kgの多結晶シリコンを溶融し、 1000
mm長さの単結晶を製造した。( Embodiment 2 ) A view in which the melting crucible of the present invention shown in FIG . 2 or 3 is arranged .
Using a silicon single crystal manufacturing apparatus shown in FIG. 4 , a single crystal having a diameter of 8 inches was manufactured. Using a quartz crucible with an inner diameter of 560 mm and a height of 360 mm, melting 100 kg of polycrystalline silicon,
A single crystal having a length of mm was manufactured.
【００２６】図２に示すように石英坩堝およびカーボン
坩堝の上部に、断面が下方に開いたコの字形のカーボン
製リングが挿入されている溶融坩堝を用いると、25回の
引上げのうち石英坩堝の変形、座屈が認められたものは
なかった。また、図３に示す石英坩堝およびカーボン坩
堝の上部に、断面が下方に開いた長さ 60 mmのコの字形
のカーボン製クリップ６個を円周に挿入した溶融坩堝を
用いると、25回の引上げのうち石英坩堝の変形、座屈が
認められたものはなかった。As shown in FIG . 2, when a melting crucible in which a U-shaped carbon ring whose cross section is opened downward is inserted in the upper part of the quartz crucible and the carbon crucible, the quartz crucible is pulled out of 25 times. No deformation or buckling was observed. In addition, when a melting crucible in which six U-shaped carbon clips each having a cross section opened downward and having a length of 60 mm are inserted around the circumference of a quartz crucible and a carbon crucible shown in FIG. None of the pulls showed deformation or buckling of the quartz crucible.
【００２７】石英坩堝およびカーボン坩堝の上部に、断
面が下方に開いたコの字形のカーボン製リングを挿入す
ることによって、石英坩堝側壁の内部への倒れ込みがな
くなり、さらに石英坩堝とカーボン坩堝との間へのSiO
ガスの侵入がなく、カーボン坩堝の珪化（ＣがSiC とな
る）を防止してカーボン坩堝の寿命を延長させることが
できた。By inserting a U-shaped carbon ring whose cross section is open downward into the upper part of the quartz crucible and the carbon crucible, it does not fall into the inside of the quartz crucible side wall. SiO between
There was no gas intrusion, and silicification of the carbon crucible (C was changed to SiC) was prevented, thereby extending the life of the carbon crucible.
【００２８】[0028]
【発明の効果】本発明のシリコン溶融坩堝を使用したシ
リコンの単結晶製造装置によれば、石英坩堝側壁の倒れ
込み、座屈、湾曲等の変形や石英坩堝とカーボン坩堝と
の間にSiO ガスが侵入することがなくなり、溶融坩堝当
たりのシリコン単結晶の製造本数を増加させることがで
きる。According to the silicon single crystal manufacturing apparatus using the silicon melting crucible of the present invention, the quartz crucible side wall is deformed such as falling down, buckling, bending, etc., and SiO gas is generated between the quartz crucible and the carbon crucible. Intrusion does not occur, and the number of silicon single crystals produced per molten crucible can be increased.
【図１】本発明のシリコン溶融用坩堝の縦断面を示す図
である。FIG. 1 is a view showing a longitudinal section of a silicon melting crucible of the present invention.
【図２】本発明の別態様のシリコン溶融用坩堝の縦断面
を示す図である。FIG. 2 is a view showing a vertical cross section of a silicon melting crucible according to another embodiment of the present invention.
【図３】本発明の別態様のシリコン溶融用坩堝の縦断面
を示す図である。FIG. 3 is a view showing a longitudinal section of a silicon melting crucible according to another embodiment of the present invention.
【図４】引き上げながら凝固させるシリコン単結晶製造
装置を示す縦断面図である。FIG. 4 is a longitudinal sectional view showing a silicon single crystal manufacturing apparatus for solidifying while pulling up.
【図５】従来のシリコン溶融用坩堝の変形状態であっ
て、シリコン溶融坩堝の石英坩堝の上部が内部に倒れ込
んだ状態（左側図面）とカーボン坩堝に珪化部が発生し
た状態（右側図面）を示す溶融坩堝の縦断面図である。FIG. 5 shows a deformed state of the conventional silicon melting crucible, in which the upper part of the quartz crucible of the silicon melting crucible has fallen inside (left drawing) and a state in which a silicified portion has been generated in the carbon crucible (right drawing). It is a longitudinal cross-sectional view of the shown melting crucible.
【図６】従来のシリコン溶融用坩堝の変形状態であっ
て、シリコン溶融坩堝の石英坩堝の自重によって発生し
た座屈の状態（左側図面）と湾曲した状態（右側図面）
を示す溶融坩堝の縦断面図である。FIG. 6 shows a deformed state of a conventional silicon melting crucible, which is a buckling state (left drawing) and a curved state (right drawing) generated by the weight of the quartz crucible of the silicon melting crucible.
It is a longitudinal cross-sectional view of the melting crucible showing a.
１．溶融坩堝 ２．石英坩堝 ３．カーボン坩堝 ４．加熱用ヒータ ５．保温筒 ６．減圧チャンバー ７．シリコン溶融液 ８．種結晶 ９．シリコン単結晶 10．引上げ棒 11．ガス供給口 12．ガス排出口 13．回転軸 14．傾斜部 16．コの字形カーボンリング 17．コの字形カーボンクリップ 18．石英坩堝の倒れ込み部 18'.倒れ込んだ内面 19．カーボン坩堝の珪化部 19'.石英坩堝とカーボン坩堝との界面 20.石英坩堝の座屈部 21.石英坩堝の湾曲部 1. 1. melting crucible Quartz crucible 3. Carbon crucible 4. Heating heater 5. Insulation tube 6. Decompression chamber 7. 7. Silicon melt Seed crystal 9. Silicon single crystal 10. Pull rod 11． Gas supply port 12. Gas outlet 13． Rotary axis 14. Inclined section 16. U-shaped carbon ring 17． U-shaped carbon clip 18． 18. Falling part of quartz crucible 18 '. Silicified portion of carbon crucible 19 '. Interface between quartz crucible and carbon crucible 20. Buckling portion of quartz crucible 21. Curved portion of quartz crucible
フロントページの続き (56)参考文献 特開 昭64−76992（ＪＰ，Ａ) 特開 平６−32692（ＪＰ，Ａ) 特開 平２−188490（ＪＰ，Ａ) 特開 平３−290393（ＪＰ，Ａ) 特開 昭64−72985（ＪＰ，Ａ) 特開 平５−330974（ＪＰ，Ａ) 特開 平５−208890（ＪＰ，Ａ) 特開 昭63−274686（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 Continuation of the front page (56) References JP-A-64-76992 (JP, A) JP-A-6-32692 (JP, A) JP-A-2-188490 (JP, A) JP-A-3-290393 (JP) JP-A-64-72985 (JP, A) JP-A-5-330974 (JP, A) JP-A-5-208890 (JP, A) JP-A-63-274686 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) C30B 1/00-35/00
Claims (3)
二重構造のシリコン溶融用坩堝であって、前記石英坩堝
の上部に逆円錐帯状の傾斜部を有し、この傾斜部の角度
αが５°以上で30°未満であるシリコン溶融用坩堝。1. A silicon melting crucible inside the inserted double structure of the quartz crucible carbon crucible, have a reverse conical band of the inclined portion to the upper portion of the quartz crucible, the angle of the inclined portion
A crucible for melting silicon in which α is 5 ° or more and less than 30 ° .
シリコン溶融用坩堝であって、前記石英坩堝およびカー
ボン坩堝の上部に、断面が下方に開いたコの字形のカー
ボン製リングが両者に被さって挿入されているシリコン
溶融用坩堝。2. A silicon melting crucible in which a quartz crucible is inserted into a carbon crucible, wherein a U-shaped carbon ring having a cross section opened downward is provided on the quartz crucible and the carbon crucible. Crucible for melting silicon.
シリコン溶融用坩堝であって、前記石英坩堝およびカー
ボン坩堝の上部に、断面が下方に開いたコの字形のカー
ボン製クリップが両者にまたがって断続的に挿入されて
いるシリコン溶融用坩堝。3. A silicon melting crucible in which a quartz crucible is inserted into a carbon crucible, wherein a U-shaped carbon clip having a cross section open downward extends over the quartz crucible and the carbon crucible. Silicon melting crucible inserted intermittently.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9002521A JP3011114B2 (en) | 1996-01-12 | 1997-01-10 | Silicon melting crucible |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-3706 | 1996-01-12 | ||
| JP370696 | 1996-01-12 | ||
| JP9002521A JP3011114B2 (en) | 1996-01-12 | 1997-01-10 | Silicon melting crucible |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09249494A JPH09249494A (en) | 1997-09-22 |
| JP3011114B2 true JP3011114B2 (en) | 2000-02-21 |
Family
ID=26335914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9002521A Expired - Fee Related JP3011114B2 (en) | 1996-01-12 | 1997-01-10 | Silicon melting crucible |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3011114B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4863927B2 (en) * | 2007-04-27 | 2012-01-25 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystal and method for producing silicon single crystal using the same |
| JP5553754B2 (en) * | 2008-08-07 | 2014-07-16 | 電気化学工業株式会社 | Carbon reaction vessel |
| JP5100668B2 (en) * | 2009-01-15 | 2012-12-19 | ジャパンスーパークォーツ株式会社 | Quartz crucible mold |
| JP5286560B2 (en) * | 2009-01-15 | 2013-09-11 | 株式会社Ｓｕｍｃｏ | Quartz crucible mold |
| JP5027168B2 (en) * | 2009-01-22 | 2012-09-19 | ジャパンスーパークォーツ株式会社 | Single crystal pulling crucible and single crystal pulling method |
| JP2011057469A (en) * | 2009-09-07 | 2011-03-24 | Mitsubishi Materials Techno Corp | Crucible opening retaining member and method and apparatus for producing single crystal silicon |
| JP5337641B2 (en) * | 2009-09-07 | 2013-11-06 | 三菱マテリアルテクノ株式会社 | Residual silicon melt removal method, single crystal silicon manufacturing method, single crystal silicon manufacturing apparatus |
| US10107550B2 (en) | 2011-08-05 | 2018-10-23 | Crucible Intellectual Property, LLC. | Crucible materials |
| WO2018003386A1 (en) * | 2016-06-29 | 2018-01-04 | 株式会社クリスタルシステム | Apparatus for producing single crystal and method for producing single crystal |
| EP3572560A4 (en) | 2018-03-29 | 2020-01-22 | Crystal Systems Corporation | Single crystal manufacturing device and single crystal manufacturing method |
-
1997
- 1997-01-10 JP JP9002521A patent/JP3011114B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09249494A (en) | 1997-09-22 |
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