JP3001399B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP3001399B2 JP3001399B2 JP15237495A JP15237495A JP3001399B2 JP 3001399 B2 JP3001399 B2 JP 3001399B2 JP 15237495 A JP15237495 A JP 15237495A JP 15237495 A JP15237495 A JP 15237495A JP 3001399 B2 JP3001399 B2 JP 3001399B2
- Authority
- JP
- Japan
- Prior art keywords
- lead
- sealing resin
- resin
- leads
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置に関し、特に
樹脂封止型パッケージを備える半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a resin-sealed package.
【０００２】[0002]
【従来の技術】近年における半導体装置のリードの微細
化に伴い、リード幅及びリード厚が低減され、リードの
機械的な強度の低下が問題となっている。特に樹脂封止
型半導体装置では、リードが樹から脱落されるリード抜
けも問題となる。このため、特開平１−１６１８５６号
公報では、図６に示すように、樹脂とリードの両方に対
して密着性の良い障壁樹脂層を設けた構成がとられてい
る。すなわち、同図において、リードフレーム２１によ
りアイランド２２とリード２３が形成され、アイランド
２３上に半導体チップ２４が搭載され、リード２３に対
してボンディングワイヤ２６により電気接続を行ってい
る。そして、封止樹脂２８の外側面に相当する領域のリ
ード２３の表面には障壁樹脂層２７を形成し、これによ
りリード２３と封止樹脂２８との密着性を改善し、リー
ド２３の抜け防止を図っている。2. Description of the Related Art With the recent miniaturization of leads of semiconductor devices, lead width and lead thickness have been reduced, and the mechanical strength of leads has been reduced. In particular, in a resin-encapsulated semiconductor device, there is a problem in that the leads fall off from the tree. For this reason, in JP-A-1-161856, as shown in FIG. 6, a configuration in which a barrier resin layer having good adhesion to both the resin and the lead is provided. That is, in the same figure, an island 22 and a lead 23 are formed by a lead frame 21, a semiconductor chip 24 is mounted on the island 23, and an electrical connection is made to the lead 23 by a bonding wire 26. Then, a barrier resin layer 27 is formed on the surface of the lead 23 in a region corresponding to the outer surface of the sealing resin 28, thereby improving the adhesion between the lead 23 and the sealing resin 28 and preventing the lead 23 from coming off. Is being planned.
【０００３】一方、特開平５−３１５３９３号公報で
は、図７（ａ），（ｂ）に平面図とＡＡ線断面図を示す
ように、ＴＡＢ（テープ・オートメイテッド・ボンディ
ング）技術において、半導体チップ３４のパッド上にテ
ープのインナリード３３をバンプ電極３６により接続
し、かつこれらインナリード３３とパンプ電極３６を含
む半導体チップ３４の表面上を封止樹脂３８で被覆して
封止を行っている。この場合、封止樹脂３８の外側面に
相当する領域のインナリード３３は、その幅寸法を部分
的に増大させた延在部３３ａを設けており、この延在部
３３ａにより封止時に封止樹脂３８が外部に流出される
ことを抑制する一方で、封止後はリード３３が封止樹脂
３８から脱落されることを抑制している。On the other hand, in Japanese Unexamined Patent Publication No. Hei 5-315393, as shown in the plan view and the cross-sectional view taken along the line AA in FIGS. The inner leads 33 of the tape are connected to the pads 34 by bump electrodes 36, and the surface of the semiconductor chip 34 including the inner leads 33 and the pump electrodes 36 is covered with a sealing resin 38 for sealing. . In this case, the inner lead 33 in a region corresponding to the outer surface of the sealing resin 38 is provided with an extended portion 33a whose width dimension is partially increased, and the inner lead 33 is sealed by the extended portion 33a at the time of sealing. While suppressing the resin 38 from flowing out, the lead 33 is prevented from dropping from the sealing resin 38 after the sealing.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、前記し
たいずれの公報に記載のものも、リードが封止樹脂から
脱落されることを防止する上では有効であるが、リード
の機械的な強度を高める点では十分ではないという問題
がある。なお、後者の特開平５−３１５３９３号公報に
記載のものは、インナリードに延在部を設けることで、
この部分の曲げ強度等が増大されるが、この部分は封止
樹脂内に埋設されるため、封止樹脂の外側におけるイン
ナリードの曲げ強度を向上させる場合には有効でない。However, any of the above publications is effective in preventing the lead from falling off the sealing resin, but increases the mechanical strength of the lead. There is a problem that the point is not enough. The latter one described in Japanese Patent Application Laid-Open No. 5-315393 is provided by providing an inner lead with an extending portion.
Although the bending strength and the like of this portion are increased, since this portion is embedded in the sealing resin, it is not effective in improving the bending strength of the inner lead outside the sealing resin.
【０００５】[0005]
【発明の目的】本発明の目的は、リードの抜け防止を図
る一方で、リードの機械的な強度、特に封止樹脂の外側
面に沿う部分でのリード曲げ強度を高めた半導体装置を
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device in which the mechanical strength of the lead, particularly the bending strength of the lead along the outer surface of the sealing resin, is increased while preventing the lead from coming off. It is in.
【０００６】[0006]
【課題を解決するための手段】本発明は、樹脂封止型の
半導体装置において、封止樹脂から突出形成されるリー
ドの片面には有機系絶縁フィルムが一体に設けられてお
り、この有機系絶縁フィルムはリード幅以上の幅寸法に
形成され、かつ前記封止樹脂に埋設された状態で封止樹
脂の外側面の内外にわたって延在されることを特徴とす
る。According to the present invention, in a resin-sealed semiconductor device, an organic insulating film is integrally provided on one surface of a lead formed to project from a sealing resin. The insulating film is formed to have a width dimension equal to or larger than the lead width, and extends over the inside and outside of the outer surface of the sealing resin while being embedded in the sealing resin .
【０００７】ここで、リードはアイランドと共に導電性
素材によりリードフレームの一部として形成されてお
り、アイランド上に搭載された半導体チップとリードと
がボンディングワイヤにより接続され、かつアイランド
からリードにわたるリードフレームの下面に有機系絶縁
フィルムが一体的に貼り付けられた構成とされる。 Here, the lead is formed as a part of the lead frame by a conductive material together with the island, the semiconductor chip mounted on the island is connected to the lead by a bonding wire, and the lead frame extends from the island to the lead. The organic insulating film is integrally attached to the lower surface of the substrate.
【０００８】[0008]
【０００９】また、有機系絶縁フィルムは並列配置され
た複数のリードにわたって連続した状態で延在されるこ
とが好ましい。Preferably, the organic insulating film extends continuously over a plurality of leads arranged in parallel.
【００１０】[0010]
【作用】リードの片面に一体的に設けられた有機系絶縁
フィルムによりリードと封止樹脂との密着性が高めら
れ、リードの抜け防止が実現される。また、有機系絶縁
フィルムは封止樹脂の外側面の内外にわたって延在され
るため、封止樹脂の外側面におけるリードの曲げ強度が
高められ、リードの機械的な強度を向上させる。The adhesion between the lead and the sealing resin is enhanced by the organic insulating film integrally provided on one side of the lead, and the lead is prevented from coming off. Further, since the organic insulating film extends inside and outside the outer surface of the sealing resin, the bending strength of the lead on the outer surface of the sealing resin is increased, and the mechanical strength of the lead is improved.
【００１１】[0011]
【実施例】次に、本発明の実施例を図面を参照して説明
する。図１（ａ），（ｂ）は本発明の第１実施例の要部
の断面図とその平面図である。アイランド２とリード３
はリードフレーム１として４２アロイ合金、または銅等
の金属板により形成されたのもであり、アイランド２の
表面上には半導体チップ４を有機系樹脂、金属混合樹
脂、低融点金属等の接着剤５により搭載する。また、こ
の半導体チップ４のパッド電極と前記リード３のインナ
部とをボンディングワイヤ６により相互に電気接続す
る。また、前記アイランド２とリード３の下面には、リ
ード強度向上用のポリイミドフィルム７を延在し、接着
剤により一体的に接着する。このポリイミドフィルム７
はリード３においては、リード３の両側に多少はみ出さ
れるようにリード３よりも幅広に形成し、かつ後工程で
封止される樹脂の外側界面よりも外側に突出されるよう
な形状として構成される。Next, an embodiment of the present invention will be described with reference to the drawings. FIGS. 1A and 1B are a sectional view and a plan view of a main part of a first embodiment of the present invention. Island 2 and Lead 3
The lead frame 1 is formed of a metal plate such as a 42 alloy alloy or copper, and the semiconductor chip 4 is formed on the surface of the island 2 by an adhesive 5 such as an organic resin, a metal mixed resin, or a low melting point metal. Mount. The pad electrodes of the semiconductor chip 4 and the inner portions of the leads 3 are electrically connected to each other by bonding wires 6. A polyimide film 7 for improving the strength of the lead extends from the lower surface of the island 2 and the lower surface of the lead 3 and is integrally bonded with an adhesive. This polyimide film 7
The lead 3 is formed wider than the lead 3 so as to protrude slightly on both sides of the lead 3 and is formed so as to protrude outside the outer interface of the resin to be sealed in a later step. Is done.
【００１２】そして、前記アイランド２及びリード３の
インナ部３ａを含む領域を封止樹脂８により封止するこ
とで、半導体装置が完成される。この完成状態では、リ
ード３においては、図２に示すように、リード３のアウ
タ部３ｂが封止樹脂８から突出されるが、このリード３
と共に前記封止樹脂８内に埋設されている前記ポリイミ
ドフィルム７の一部も封止樹脂８から突出された構成と
なる。Then, a region including the inner portion 3a of the island 2 and the lead 3 is sealed with a sealing resin 8, thereby completing the semiconductor device. In this completed state, the outer portion 3b of the lead 3 protrudes from the sealing resin 8 as shown in FIG.
At the same time, a part of the polyimide film 7 embedded in the sealing resin 8 also has a configuration protruding from the sealing resin 8.
【００１３】したがって、この構成では、ポリイミドフ
ィルム７はリード３に一体的に接着されており、かつこ
のポリイミドフィルム７は封止樹脂８に密着されるた
め、リード３と封止樹脂８との密着性が高められる。こ
れにより、リード３は封止樹脂８から抜け難くなり、抜
け防止効果が高められる。また、リード３と封止樹脂８
の界面との間の防水性も高められる。ポリイミドフィル
ム７によってリード３の下面が裏打ちされるため、封止
樹脂８の外側面におけるリード３の板厚方向の曲げ強度
が高められ、これにより曲げに対する機械的な強度が高
められる。因みに、本実施例の構造と前記した従来の半
導体装置とにおいて、同一リード幅での比較を行ったと
ころ、従来の半導体装置ではリードの曲げ強度が１１３
ｇ程度であったのに対し、本実施例のリードの曲げ強度
を１７８ｇ程度に向上することが可能とされている。Therefore, in this configuration, the polyimide film 7 is integrally adhered to the lead 3 and the polyimide film 7 is adhered to the sealing resin 8, so that the adhesion between the lead 3 and the sealing resin 8 is made. Sex is enhanced. This makes it difficult for the lead 3 to come off from the sealing resin 8, and enhances the effect of preventing the lead 3 from coming off. Also, the lead 3 and the sealing resin 8
The waterproofness between the interface and the surface is also enhanced. Since the lower surface of the lead 3 is lined with the polyimide film 7, the bending strength in the thickness direction of the lead 3 on the outer surface of the sealing resin 8 is increased, thereby increasing the mechanical strength against bending. Incidentally, a comparison was made between the structure of the present embodiment and the above-described conventional semiconductor device at the same lead width.
g, whereas the bending strength of the lead of this embodiment can be improved to about 178 g.
【００１４】ここで、ポリイミドフィルム７は、複数本
のリードのそれぞれに対応して形成するのではなく、図
３に示すように、並列配置されている複数本のリード３
間にわたって連続状態に延設されるポリイミドフィルム
として形成しても前記第１実施例と同様に、各リード３
の抜け防止効果と曲げ強度向上効果を得ることができ
る。Here, the polyimide film 7 is not formed for each of the plurality of leads, but for the plurality of leads 3 arranged in parallel as shown in FIG.
As in the case of the first embodiment, each lead 3
And an effect of improving bending strength can be obtained.
【００１５】図４は本発明の参考例を示す断面図であ
る。この参考例では、柔軟なポリイミドテープ１１の表
面に所要パターンの銅箔からなるアイランド１２とリー
ド１３を一体的に設けたフレキシブル・プリンティッド
・サーキットの例である。この参考例においては、前記
アイランド１２に接着剤１５を用いて半導体チップ１４
を搭載し、リード１３に対してボンディングワイヤ１６
での電気接続を行っている。FIG. 4 is a sectional view showing a reference example of the present invention. This reference example is an example of a flexible printed circuit in which an island 12 made of copper foil having a required pattern and a lead 13 are integrally provided on the surface of a flexible polyimide tape 11. In this reference example, the semiconductor chip 14 is
And the bonding wire 16 is connected to the lead 13.
The electrical connection is made.
【００１６】そして、前記アイランド１２とリード１３
の下面に存在されるポリイミドテープ１１の一部をリー
ド強度向上用ポリイミドフィルム１７としてリード１３
の先端方向に向けて延長させている。そして、前記アイ
ランド１２及びリード１３のインナ部を含む領域を封止
樹脂１８により封止している。この樹脂封止を行った状
態では、図５に示すように、リード１３の下面に存在す
るポリイミドフィルム１７はその幅寸法がリード１３の
幅寸法よりも大きく、かつその一部は封止樹脂１８の外
側界面から所要の長さで突出された構成とされることに
なる。なお、リード１３のアウタ部に設けられている保
護テープとしてのポリイミドテープ１１は、樹脂封止が
完了されるまで、各リードの配列が崩れないように保持
するためのものである。The island 12 and the lead 13
A part of the polyimide tape 11 present on the lower surface of the lead 13 is used as a polyimide film 17 for improving lead strength.
It is extended toward the tip direction. A region including the inner portion of the island 12 and the lead 13 is sealed with a sealing resin 18. In the state where the resin sealing is performed, as shown in FIG. 5, the width of the polyimide film 17 present on the lower surface of the lead 13 is larger than the width of the lead 13 and a part thereof is formed of the sealing resin 18. Of a required length from the outer interface. Note that the polyimide tape 11 as a protective tape provided on the outer portion of the lead 13 is for holding the arrangement of each lead so as not to be distorted until the resin sealing is completed.
【００１７】したがって、この参考例の構成において
は、リード１３の下面に一体的に延在されるポリイミド
フィルム１７によってリード１３と封止樹脂１８との密
着性が高められ、リード１３の抜け防止効果が高められ
る。また、封止樹脂１８の外側面におけるリード１３の
曲げ強度を高めることが可能となる。しかしながら、こ
の参考例ではリード１３がリードフレームとして構成さ
れていないこと、ポリイミドフィルム１７が封止樹脂１
８により埋設されていない点で、前記本発明の実施例と
同等の作用効果を期待することは難しい。 Therefore, in the configuration of this reference example,
The adhesion is enhanced between the lead 13 and the sealing resin 18 by a polyimide film 17 is extended integrally with the lower surface of the lead 13, strain relief effect of the lead 13 is enhanced. In addition, the bending strength of the lead 13 on the outer surface of the sealing resin 18 can be increased. However, this
In the reference example, the lead 13 is configured as a lead frame.
That the polyimide film 17 is not
8 in that it is not buried.
It is difficult to expect the same effect.
【００１８】[0018]
【発明の効果】以上説明したように本発明は、封止樹脂
から突出形成されるリードの片面に有機系絶縁フィルム
が一体に設け、かつこの有機系絶縁フィルムはリード幅
以上の幅寸法に形成され、かつ封止樹脂に埋設された状
態で封止樹脂の外側面の内外にわたって延在されること
で、リードと封止樹脂との密着性が高められてリードの
抜け防止が実現でき、かつ防水性が高められ、しかも封
止樹脂の外側面におけるリードの曲げ強度が高められて
リードの機械的な強度を向上することができる。As described above, according to the present invention, an organic insulating film is integrally provided on one surface of a lead formed to project from a sealing resin, and the organic insulating film is formed to have a width larger than the lead width. Embedded in the sealing resin
In this state, the sealing resin extends over the inside and outside of the outer surface, so that the adhesion between the lead and the sealing resin is enhanced, the lead can be prevented from coming off, and the waterproof property is enhanced. The bending strength of the lead on the outer surface of the lead is increased, and the mechanical strength of the lead can be improved.
【００１９】また、リードフレームとして構成されたリ
ードに対して本発明を適用する場合には、従来のリード
フレーム構造の樹脂封止型半導体装置に対し、そのリー
ドに有機系絶縁フィルムを貼り付ける工程を加えるだけ
でよく、簡単に本発明を実施することができる。When the present invention is applied to a lead configured as a lead frame, a step of attaching an organic insulating film to the lead is performed on a conventional resin-encapsulated semiconductor device having a lead frame structure. And the present invention can be easily implemented.
【００２０】[0020]
【００２１】また、有機系絶縁フィルムは並列配置され
た複数のリードにわたって連続した状態で延在すること
で、有機系絶縁フィルムとリードとの位置合わせが容易
となり、製造を容易に行うことも可能となる。Further, since the organic insulating film extends in a continuous state over a plurality of leads arranged in parallel, the alignment between the organic insulating film and the leads is facilitated, and the production can be performed easily. Becomes
【図１】本発明の第１実施例の断面図とその平面図であ
る。FIG. 1 is a sectional view and a plan view of a first embodiment of the present invention.
【図２】樹脂封止した状態の図１の要部の斜視図であ
る。FIG. 2 is a perspective view of a main part of FIG. 1 in a state of being sealed with a resin.
【図３】第１実施例の変形例の斜視図である。FIG. 3 is a perspective view of a modification of the first embodiment.
【図４】本発明の参考例の断面図である。FIG. 4 is a sectional view of a reference example of the present invention.
【図５】図３の要部の斜視図である。FIG. 5 is a perspective view of a main part of FIG. 3;
【図６】従来の半導体装置の一例の断面図である。FIG. 6 is a cross-sectional view of an example of a conventional semiconductor device.
【図７】従来の半導体装置の他の例の平面図とそのＡＡ
線断面図である。FIG. 7 is a plan view of another example of a conventional semiconductor device and its AA.
It is a line sectional view.
１ リードフレーム ２，１２ アイランド ３，１３ リード ４，１４ 半導体チップ ６，１６ ボンディングワイヤ ７，１７ ポリイミドフィルム ８，１８ 封止樹脂 １１ ポリイミドテープ DESCRIPTION OF SYMBOLS 1 Lead frame 2,12 Island 3,13 Lead 4,14 Semiconductor chip 6,16 Bonding wire 7,17 Polyimide film 8,18 Sealing resin 11 Polyimide tape
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭58−161352（ＪＰ，Ａ) 特開 平３−261153（ＪＰ，Ａ) 特開 昭61−125059（ＪＰ，Ａ) 特開 平３−119752（ＪＰ，Ａ) 特開 平１−187844（ＪＰ，Ａ) 特開 平３−293757（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-58-161352 (JP, A) JP-A-3-261153 (JP, A) JP-A-61-125059 (JP, A) JP-A-3-3 119752 (JP, A) JP-A-1-187844 (JP, A) JP-A-3-293757 (JP, A)
Claims (2)
ードを前記半導体チップと共に樹脂により封止し、前記
リードの一部を前記封止樹脂の外側面から突出させる構
成の半導体装置において、前記リードはアイランドと共
に導電性素材によりリードフレームの一部として形成さ
れ、前記アイランド上に搭載された前記半導体チップと
前記リードとがボンディングワイヤにより接続され、か
つ前記アイランドから前記リードにわたる前記リードフ
レームの下面に有機系絶縁フィルムが一体的に貼り付け
られ、この有機系絶縁フィルムは前記リード幅以上の幅
寸法に形成され、かつ前記封止樹脂に埋設された状態で
前記封止樹脂の外側面から突出される前記リードにおい
て前記封止樹脂の外側面の内外にわたって延在されるこ
とを特徴とする半導体装置。1. A sealed with a resin leads to be electrically connected to the semiconductor chip with the semiconductor chip, the semiconductor device in which a part protrudes from the outer surface of the sealing resin of the leads, the lead Is with the island
Formed as part of the lead frame with conductive material
And the semiconductor chip mounted on the island
The leads are connected by bonding wires;
The lead from the island to the lead
Organic insulating film is integrally attached to the lower surface of the frame
Is, the organic insulating film is formed to a width dimension equal to or greater than the lead width, and in embedded state in the sealing resin
The lead smell protruding from the outer surface of the sealing resin
And extending over the inside and outside of the outer surface of the sealing resin.
た複数のリードにわたって連続した状態で延在されてな
る請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the organic insulating film extends continuously over a plurality of leads arranged in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15237495A JP3001399B2 (en) | 1995-05-27 | 1995-05-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15237495A JP3001399B2 (en) | 1995-05-27 | 1995-05-27 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08330491A JPH08330491A (en) | 1996-12-13 |
| JP3001399B2 true JP3001399B2 (en) | 2000-01-24 |
Family
ID=15539135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15237495A Expired - Lifetime JP3001399B2 (en) | 1995-05-27 | 1995-05-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3001399B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58161352A (en) * | 1982-03-19 | 1983-09-24 | Yamagata Nippon Denki Kk | Semiconductor device |
| JPH03261153A (en) * | 1990-03-09 | 1991-11-21 | Mitsubishi Electric Corp | Package for semiconductor device |
| JPH03293757A (en) * | 1990-04-11 | 1991-12-25 | Ibiden Co Ltd | Electronic parts mounting substrate using film |
-
1995
- 1995-05-27 JP JP15237495A patent/JP3001399B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08330491A (en) | 1996-12-13 |
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