JP3000877B2 - 金メッキ電極の形成方法、基板及びワイヤボンディング方法 - Google Patents

金メッキ電極の形成方法、基板及びワイヤボンディング方法

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Publication number
JP3000877B2
JP3000877B2 JP7031223A JP3122395A JP3000877B2 JP 3000877 B2 JP3000877 B2 JP 3000877B2 JP 7031223 A JP7031223 A JP 7031223A JP 3122395 A JP3122395 A JP 3122395A JP 3000877 B2 JP3000877 B2 JP 3000877B2
Authority
JP
Japan
Prior art keywords
nickel
layer
gold
gold layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7031223A
Other languages
English (en)
Other versions
JPH08227911A (ja
Inventor
宏 土師
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP7031223A priority Critical patent/JP3000877B2/ja
Priority to DE19606074A priority patent/DE19606074C2/de
Priority to GB9603568A priority patent/GB2297981B/en
Priority to US08/604,072 priority patent/US5767008A/en
Publication of JPH08227911A publication Critical patent/JPH08227911A/ja
Priority to US09/052,979 priority patent/US6331347B2/en
Application granted granted Critical
Publication of JP3000877B2 publication Critical patent/JP3000877B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
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    • Y10T428/12861—Group VIII or IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、金メッキ電極の形成方
法、基板及びワイヤボンディング方法に関するものであ
る。
【０００２】
【従来の技術】従来、ガラスエポキシ基板に金メッキに
より電極を形成し、チップとこの電極にワイヤをボンデ
ィングして両者を電気的に接続することが広く行われて
いる。ところで、この金メッキは、ワイヤの下端部に形
成されるボール等との十分な接合性を有するものでなけ
ればならない。
【０００３】このため従来、この金メッキは、経験的に
３００ナノメートル以上の比較的厚い金層でなければな
らないものと信じられている。そして、電解メッキ法、
あるいは無電解還元型メッキ法により、厚めの金層を形
成することが常識となっていた。
【０００４】
【発明が解決しようとする課題】しかしながら、電解メ
ッキ法あるいは無電解置換型メッキ法のいずれであって
も、厚めの金層を形成するには、長大な処理時間と高い
製造コストがかかっていた。
【０００５】そこで本発明は、短く処理時間で安価に十
分な接合性を有する金メッキを形成できる金メッキ電極
の形成方法、基板及びワイヤボンディング方法を提供す
ることを目的とする。
【０００６】
【課題を解決するための手段】本発明の金メッキ電極の
形成方法は、基板に銅箔を形成するステップと、銅箔上
にニッケルを含むバリアメタル層を形成するステップ
と、バリアメタル層上にメッキ法により金層を形成する
ステップと、基板を加熱することにより、金層に存在す
るニッケルを金層の表層部に集め、金層内の純度を高
め、金層の表層部にニッケル又はニッケルの化合物を析
出させるステップと、金層の表層部に析出したニッケル
又はニッケルの化合物を取り除いて、その下層にある純
度が高められた金層を露呈させるステップとを含む。
【０００７】
【作用】上記構成において、メッキ法により金層を形成
した直後から、金層内にはバリアメタル層のニッケルが
存在していることが本発明者の実験により明らかとなっ
た。また基板を加熱すると、金層内のニッケルが表層部
にニッケルの化合物の形態で析出し、表層部よりも下方
の金層の純度が十分な接合性を得られる程度に向上する
ことも、本発明者の実験により明らかとなった。従っ
て、金層の表層部に析出したニッケルの化合物を取り除
いて、純度の高い金層を外部に露呈させることにより、
純度が高く良好な接合性を有する金メッキ電極を形成す
ることができる。
【０００８】
【実施例】次に、図面を参照しながら本発明の実施例を
説明する。
【０００９】まず本発明の一実施例における金メッキ電
極の形成方法の各工程を説明するに先立ち、本発明者が
行った実験の結果を説明することにより、置換型無電解
メッキ法による金メッキ電極（従来十分な接合性を得ら
れないとされている）の問題点を明らかにする。
【００１０】さて図２〜図４は、本発明の一実施例にお
ける金メッキ電極の表層部のオージェ強度を示すグラフ
である。このうち、図２は、基板に回路パターンを構成
する銅箔を形成し、そのうえにニッケルからなるバリア
メタル層を形成し、さらにバリアメタル層の上に置換型
無電解メッキ法により金メッキ電極を形成した直後にお
ける金層の表層部のオージェ強度を示している。図２に
よれば、金メッキを形成した直後からニッケルまたはニ
ッケルの化合物の存在を示す波形（Ａ１）が現れてい
る。
【００１１】次に図３は、図２に示したオージェ強度を
示す基板を１５０℃で３０分間加熱した直後のオージェ
強度を示す。
【００１２】ここで、ワイヤボンディングの前後におけ
る基板の処理を簡単に説明すると、まず金メッキ電極が
形成され、その後基板に接着剤が塗布され、そのうえに
チップがダイボンディングされる。そして、接着剤を硬
化させチップを基板に固着するために、基板は上記条件
に近い条件で加熱される。そして、基板にワイヤボンデ
ィングが行われる。即ち、この加熱を行った直後の基板
は、ワイヤボンディングが行われる直前の状態の基板と
ほとんど同じ環境にあるものである。
【００１３】ここで、図３を図２と比較すると、図３で
は図２よりも、ニッケルまたはニッケルの化合物の存在
を示す波形（Ａ２）が大きくなっている。このことか
ら、ワイヤボンディングの前に行われる加熱によって、
金層の表層部に、ニッケルまたはニッケルの化合物が析
出し集中していたことがわかる。
【００１４】また本発明者は、別途（１）金メッキ電極
形成直後と、（２）上記加熱後にワイヤボンディングを
試行してみたところ、前者では接合性が不良であり、後
者では接合性がきわめて悪いという結果を得た。
【００１５】さらに本発明者は、上記熱処理後の金メッ
キ電極の状態を詳しく調査を行った。図４は、図３に示
したオージェ強度を有する金層の表層部をエッチングに
より５ナノメートル除去した後のオージェ強度を示す。
【００１６】図４から明らかなように、ニッケルまたは
ニッケルの化合物の存在を示す波形（Ａ３）は、ほとん
ど現れていない。また図２と図４を比較すると金層のう
ち、表層部からほんのわずかの深さだけ下方の部分で
は、金メッキ形成直後よりも金の純度が非常に高くなっ
ていることがわかる。
【００１７】以上のことから、上記熱処理後、金メッキ
電極の表層部には、金メッキ電極中に存在するニッケル
またはニッケルの化合物が集中し、逆にその表層部より
下方の金層では、金の純度が向上するということがわか
る。
【００１８】また、本発明者は、別途この表層部のニッ
ケルまたはニッケルの化合物を取り除いた金メッキ電極
についてワイヤボンディングを試行してみたことろ、非
常に良好な接合性を得ることができた。このことから、
金層の表層部にあるニッケルまたはニッケルの化合物
が、ワイヤとの接合性を阻害することがわかる。すなわ
ち、この金層の表層に集中したニッケルまたはニッケル
の化合物を取り除けば、その下方に存在する純度の高い
金層を露呈させることができ、ワイヤとの接合性を向上
することができることが、判明した。因みに結合エネル
ギーを詳細に検討した結果、金層の表層部に析出したニ
ッケルの化合物は、Ｎｉ（ＯＨ）2，Ｎｉ2Ｏ3，ＮｉＯ
からなることが分かった。
【００１９】図５は、処理の各プロセスにおけるニッケ
ルと金との比率を示している。本発明者は、金層の厚さ
を、１０ナノメートル（三角）、５０ナノメートル
（丸）、１００ナノメートル（四角）として、実験を行
ってみた。図５の縦軸側に表示されているように、メッ
キ直後から上記条件による加熱を行った際、金層の表層
部におけるニッケルの比率が上昇し、金層の表層部をエ
ッチングして、金層の表層部に集中したニッケルまたは
ニッケルの化合物を取り除くと、ニッケルの比率が非常
に小さくなる。
【００２０】そしてその後、１３０℃にて持続的に加熱
を行っても、ほとんどニッケルの比率は上昇せず、低い
値をとり続ける。即ち、一旦エッチングで金層の表層部
に集中したニッケルまたはニッケルの化合物を取り除く
と、その後持続的に加熱しても、外部に露呈する金層の
表層部は、金の比率が高いままの状態になることがわか
る。
【００２１】なお、金層の厚さが、１０ナノメートルか
ら１００ナノメートルのいずれにおいても、同様の結果
が得られている。ちなみに、従来の金メッキ電極の形成
方法では、３００ナノメートル以上の厚さを持つ金層
を、長時間・高いコストをかけて形成していたものであ
る。
【００２２】以上のことから、従来常識とされていた金
層（３００ナノメートル以上）よりも非常に薄い金層
（例えば１００ナノメートル以下）を、メッキ法（置換
型無電解メッキ法でよい）で形成して、この金メッキ電
極を加熱し、エッチングによりその表層部を薄く取り除
くと、その後持続的に加熱を行っても、ニッケルの比率
はほとんど上昇せず、金層の表層部の金の純度を高く保
持することができることがわかる。
【００２３】以上の事実をふまえて、本発明者は、次の
金メッキ電極の形成方法及びその形成方法による基板等
の発明を完成するに至ったものである。
【００２４】図１は、本発明の一実施例における電極形
成方法の各プロセスを示す工程説明図である。まず図１
（ａ）に示すように、基板１の表面に銅箔（１８または
３５マイクロメートル）により回路パターンを形成す
る。次に図１（ｂ）に示すように、銅箔の電極２となる
部分２ａにニッケルからなるバリアメタル層２ｂ（３な
いし５マイクロメートル）を形成する。
【００２５】さらに、図１（ｃ）に示すように、バリア
メタル層２ｂの上に、置換型無電解メッキ法（いわゆる
フラッシュメッキ）により１０ないし１００ナノメート
ル程度の厚さの金層２ｃを形成する。このとき図１
（ｄ）に示すように、金層２ｃ中にはバリアメタル層に
含まれていたニッケルまたはニッケルの化合物が存在し
ている。
【００２６】ここで、金層２ｃを形成するにあたり、置
換型無電解メッキ法でなく、電解メッキ法等他のメッキ
法によっても良い。しかし、電解メッキ法は、メッキの
ためだけに細かな配線を要し、この細かな配線が本来の
回路パターンのための配線の邪魔になったり、またこの
細かな配線により、いわゆるアンテナ効果が発生する可
能性があるので、できれば置換型無電解メッキ法による
ことが望ましい。
【００２７】次に基板１を、例えば１５０℃で３０分程
度加熱する。すると、図１（ｅ）に示すように、金層２
ｃ中に存在していたニッケルまたはニッケルの化合物
が、金層２ｃの表層部に析出し集中する。そして、図１
（ｆ）に示すように金層２ｃの表層部をエッチングによ
り５ナノメートル程度取除く。すると、金層２ｃの表面
のニッケル又はその化合物がほとんど全部取除かれ、純
度が高められた金層２ｃが外部に露呈するのである。エ
ッチングの方法としては、ドライエッチングが好ましい
がウェットエッチングでも可能である。
【００２８】次に図６を参照しながら、本実施例の電極
２を形成した基板１についてワイヤボンディングを行う
前後の工程を説明する。
【００２９】さて上述のようにエッチングによってニッ
ケルの化合物が集中した表層部を取除き、純度の高い金
層２ｃを露呈させてから、基板１の電極２の間に接着剤
３を塗布する（図６（ａ））。次に図６（ｂ）に示すよ
うに接着剤３上にチップ４をダイボンディングする。そ
して図６（ｃ）に示すように、基板１をキュア装置に入
れ加熱する。ここで上述したように、この加熱によって
もほとんどニッケル／金の比率は上昇せず十分な接合性
が保持される。そして、図６（ｄ）に示すようにワイヤ
５でチップ４と電極２をボンディングし、図６（ｅ）に
示すように樹脂６によってチップ４、ワイヤ５、電極２
などを封止する。
【００３０】本発明の実施例は上述したとおりである
が、上述した実施例に種々の改良を加えて実施すること
ができる。例えば、バリアメタル層２ｂ上に金層２ｃを
形成した後に行う熱処理の条件としては温度が摂氏１５
０度〜２００度、時間が５分〜６０分の範囲で設定する
のが好ましい。つまり、金層２ｃ中のニッケルを金層２
ｃの表層部に析出させることができる条件で、熱処理を
行うとよい。基板１としてはセラミック基板等、他の材
質の基板を使用してもよい。
【００３１】
【発明の効果】本発明の金メッキ電極の形成方法は、基
板に銅箔を形成するステップと、銅箔上にニッケルを含
むバリアメタル層を形成するステップと、バリアメタル
層上にメッキ法により金層を形成するステップと、基板
を加熱することにより、金層に存在するニッケルを金層
の表層部に集め、金層内の純度を高め、金層の表層部に
ニッケル又はニッケルの化合物を析出させるステップ
と、金層の表層部に析出したニッケル又はニッケルの化
合物を取り除いて、その下層にある純度が高められた金
層を露呈させるステップとを含むので、少ない量の金に
より安価なコストで十分な接合性を有する電極を形成す
ることができる。
【図面の簡単な説明】
【図１】（ａ）本発明の一実施例における電極形成方法
の各プロセスを示す工程説明図 （ｂ）本発明の一実施例における電極形成方法の各プロ
セスを示す工程説明図 （ｃ）本発明の一実施例における電極形成方法の各プロ
セスを示す工程説明図 （ｄ）本発明の一実施例における電極形成方法の各プロ
セスを示す工程説明図 （ｅ）本発明の一実施例における電極形成方法の各プロ
セスを示す工程説明図 （ｆ）本発明の一実施例における電極形成方法の各プロ
セスを示す工程説明図
【図２】本発明の一実施例における金メッキ電極の表層
部のオージェ強度を示すグラフ
【図３】本発明の一実施例における金メッキ電極の表層
部のオージェ強度を示すグラフ
【図４】本発明の一実施例における金メッキ電極の表層
部のオージェ強度を示すグラフ
【図５】本発明の一実施例の金メッキ電極におけるニッ
ケルと金の比率の変化を示すグラフ
【図６】（ａ）本発明の一実施例における電子部品製造
工程図 （ｂ）本発明の一実施例における電子部品製造工程図 （ｃ）本発明の一実施例における電子部品製造工程図 （ｄ）本発明の一実施例における電子部品製造工程図 （ｅ）本発明の一実施例における電子部品製造工程図
【符号の説明】
１ 基板 ２ 電極

Claims (7)

    (57)【特許請求の範囲】
  1. 【請求項１】基板に回路パターンを形成するステップ
    と、 前記回路パターンの電極となる部分にニッケルを含むバ
    リアメタル層を形成するステップと、 前記バリアメタル層上にメッキ法により金層を形成する
    ステップと、 基板を加熱することにより、前記金層に存在するニッケ
    ルを前記金層の表層部に集め、前記金層内の純度を高
    め、前記金層の表層部にニッケル又はニッケルの化合物
    を析出させるステップと、 前記金層の表層部に析出したニッケル又はニッケルの化
    合物を取り除いて、その下層にある純度が高められた金
    層を露呈させるステップと、 を含むことを特徴とする金メッキ電極の形成方法。
  2. 【請求項２】前記ニッケルの化合物は、エッチングによ
    り取り除かれることを特徴とする請求項１記載の金メッ
    キ電極の形成方法。
  3. 【請求項３】前記ニッケルの化合物は、３ナノメートル
    ないし１０ナノメートルだけ取り除かれることを特徴と
    する請求項１記載の金メッキ電極の形成方法。
  4. 【請求項４】前記基板の加熱は、摂氏１５０〜２００度
    にて５〜６０分間行われることを特徴とする請求項１記
    載の金メッキ電極の形成方法。
  5. 【請求項５】前記金層は、５ナノメートル以上１００ナ
    ノメートル以下の厚さに形成されることを特徴とする請
    求項１記載の金メッキ電極の形成方法。
  6. 【請求項６】表面に回路パターンを形成し、前記回路パ
    ターンの電極となる部分にニッケルを含むバリアメタル
    層を形成し、前記バリアメタル層上にメッキ法により金
    層を形成し、加熱して前記金層に存在するニッケルを前
    記金層の表層部に集め、前記金層内の純度を高め、前記
    金層の表層部にニッケル又はニッケルの化合物を析出さ
    せ、前記金層の表層部に析出したニッケル又はニッケル
    の化合物を取り除いて、その下層にある純度が高められ
    た金層を露呈させたことを特徴とする基板。
  7. 【請求項７】基板に形成された回路パターンの電極とな
    る部分にニッケルを含むバリアメタル層を形成し、前記
    バリアメタル層上にメッキ法により金層を形成して、基
    板に電極を形成するステップと、ｔ基板を加熱すること
    により、前記金層に存在するニッケルを前記金層の表層
    部に集め、前記金層内の純度を高め、前記金層の表層部
    にニッケルの化合物を析出させるステップと、 前記金層の表層部に析出したニッケルの化合物をエッチ
    ングにより取り除いて、その下層にある純度が高められ
    た金層を露呈させるステップと、 基板に接着剤を塗布してチップをダイボンディングする
    ステップと、 基板をキュアしてチップを基板に固着するステップと、 チップの電極と基板の電極を導電性を有するワイヤで接
    続するステップとを含むことを特徴とするワイヤボンデ
    ィング方法。
JP7031223A 1995-02-20 1995-02-20 金メッキ電極の形成方法、基板及びワイヤボンディング方法 Expired - Lifetime JP3000877B2 (ja)

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JP7031223A JP3000877B2 (ja) 1995-02-20 1995-02-20 金メッキ電極の形成方法、基板及びワイヤボンディング方法
DE19606074A DE19606074C2 (de) 1995-02-20 1996-02-19 Verfahren zum Bilden einer Goldplattierungselektrode
GB9603568A GB2297981B (en) 1995-02-20 1996-02-20 Method for forming a gold plated electrode a substrate based on the electrode forming method and a wire bonding method utilizing this electrode forming method
US08/604,072 US5767008A (en) 1995-02-20 1996-02-20 Method for forming a gold plating electrode, a substrate based on the electrode forming method, and a wire bonding method utilizing this electrode forming method
US09/052,979 US6331347B2 (en) 1995-02-20 1998-04-01 Method for forming a gold plating electrode a substrate based on the electrode forming method, and a wire bonding method utilizing this electrode forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7031223A JP3000877B2 (ja) 1995-02-20 1995-02-20 金メッキ電極の形成方法、基板及びワイヤボンディング方法

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JP3000877B2 true JP3000877B2 (ja) 2000-01-17

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JP (1) JP3000877B2 (ja)
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Publication number Publication date
DE19606074A1 (de) 1996-08-22
GB9603568D0 (en) 1996-04-17
US5767008A (en) 1998-06-16
US20010008685A1 (en) 2001-07-19
US6331347B2 (en) 2001-12-18
GB2297981B (en) 1997-03-05
JPH08227911A (ja) 1996-09-03
GB2297981A (en) 1996-08-21
DE19606074C2 (de) 1998-12-03

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