JP2995778B2 - Integrated circuit - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a method for forming an electronic circuit of a semiconductor integrated circuit.

[Prior Art] Conventionally, it has been considered to incorporate an electronic circuit for a power supply into a semiconductor integrated circuit in order to make the power supply of the semiconductor integrated circuit slightly easier. For example, when an integrated circuit having a significantly different voltage of the DC power supply system is incorporated in an electronic device, the integrated circuit can coexist with another electronic circuit power supply of the electronic device, and the number of external components can be reduced as much as possible. A good example is an attempt to build a DC stabilized power supply circuit at the power supply inlet.

[Problems to be Solved by the Invention] At present, it is easy to produce a desired DC power supply from a commercial power supply due to the spread of chopper type power supply technology, but it can be said that the space for incorporation into electronic equipment is extremely large. Absent. Such a problem is increasingly not negligible in today's world where lightness and size are preferred.

An object of the present invention is to provide an effective method for solving such a problem by focusing on an integrated circuit for greatly reducing such a technical problem.

[Means for Solving the Problems] An integrated circuit according to the present invention includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a P formed on the insulating film.
A semiconductor region formed on the insulating film, and
A rectifier comprising a diode having an N-type semiconductor region arranged to be in contact with the semiconductor region of the type, and a wiring layer connected to each of the P-type and N-type semiconductor regions; And a stabilized power supply for smoothing the output voltage.

[Examples] Hereinafter, the operation of the present invention will be described through specific examples.

FIG. 1 is a basic configuration diagram of the present invention. In the figure, 1 is a rectifier, 2 is an integrated circuit block, 3 and 4 are commercial power (AC) input terminals, 5 is a high-potential power line of the integrated circuit block, 6 is a low-potential power line of the integrated circuit block, and 7 is a power supply. It is a stabilizing means.

When the commercial power is applied to the input terminals 3 and 4, the commercial power is rectified by the rectifier 1 and converted into a quasi-DC voltage (pulsating current) having a fluctuation of the frequency of the commercial power or twice the frequency of the commercial power. . The quasi DC voltage is smoothed and optimized by the power supply stabilizing means 7.

On the other hand, the voltage smoothed and optimized by the power supply stabilizing means 7 is applied to the integrated circuit block 2 to operate.

For the power supply stabilizing means 7, for example, if the integration process is a bipolar element process, a bipolar element is used as a voltage control element as a stabilizing circuit, a band gap reference circuit, a zener diode circuit,
It is sufficient to form a differential voltage amplifier circuit such as an operational amplifier as an error voltage amplifier circuit, and in the case of a process such as CMOS, a work function difference generation circuit of a gate material and a CMOS differential amplifier circuit are used as reference voltage generation circuits. It can be formed and can be integrated very easily.

By integrating the rectifying means and the power stabilizing means as described above, it becomes possible to apply commercial power to the entire integrated circuit.

FIG. 2 shows a specific configuration example of the present invention. 1 'is a rectifying means, 2 is an integrated circuit block, 3' and 4 'are commercial power input terminals, 5 is a high potential power supply line of the integrated circuit block 2, 6 is a low potential power supply line of the integrated circuit block 2, and 7 is a power supply. Stabilization means,
8, 9, 10, and 11 are pn junction diodes formed on the same substrate as the integrated circuit block. Here, the rectifying means 1 'is constituted by pn junction diodes 8 to 11, and is a double-wave rectification, that is, a period in which the voltage polarity of the commercial power supply applied to the input terminals of 3' and 4 'is switched over time with a positive voltage and a negative voltage. The rectification operation is performed in synchronization with. First, when a commercial power supply is applied with a positive voltage at 3 'and a negative voltage at 4', the positive voltage input from 3 'is applied to the anode of the diode 8. The current flowing out of the cathode of the diode 8 passes through the path of the high-potential-side power supply line 5 of the power supply stabilizing means 5-> the inside of the power supply stabilizing means-> the low-potential power supply line 6 of the power supply stabilizing means 7. Enter the anode. At this time, the voltage is applied to the diode 10 in the forward direction (that is, the direction in which the current flows), so that the diode 10 conducts and flows from the cathode of the diode 10 to the 4 'commercial power supply (negative voltage).

Next, consider the reverse operation. That is, considering the case where the commercial power supply is applied with a positive voltage at 4 'and a negative voltage at 3', the positive voltage input from 4 'is applied to the anode of the diode 9. The current flowing out of the cathode of the diode 9 enters the anode of the diode 11 through the path of the high-potential power supply line 5-> inside the integrated circuit block-> the low-potential power supply 6 of the integrated circuit block 2 of the integrated circuit block 2. At this time, the voltage is applied to the diode 11 in the forward direction (that is, the direction in which the current flows), so that the diode 11 conducts and flows from the cathode of the diode 11 to the 3 'commercial power supply (negative voltage). As is apparent from the above description, the rectifier composed of the diodes 8 to 11 aligns the polarity of the power supply applied to the integrated circuit block 2 in one direction in accordance with the alternating operation of the voltage polarity of the commercial power supply.
The integrated circuit block 2 can operate normally.

FIG. 3 is an integrated plan view of the rectifying means shown in FIG. In the figure, 3 "and 4" are metal wirings for inputting commercial power, 5 'is a metal wiring for supplying a high potential of the integrated circuit block, 6' is a metal wiring for supplying a low potential of the integrated circuit block, and 31 and 32 are on the insulating layer. Semiconductor regions 33, 34, 35, and 36 are pn junction boundaries formed in the semiconductor regions 31 and 32, and 37, 38, 39, 40, 41, and 42 are metal wirings for power supply (3 ″, 4 ″, 5 ′, 6 ′) and semiconductor regions 31,32
And a contact hole (a hole in an insulating layer) for electrically connecting the.

FIG. 4 is a cross-sectional view of the rectifying means integrated portion. In the figure, 4 "is a metal layer for inputting commercial power, 5 'is a metal wiring for supplying a high potential of the integrated circuit block, 6' is a metal wiring for supplying a low potential of the integrated circuit block, 51 is a semiconductor substrate for forming an integrated circuit, 52 Is a silicon oxide insulating film, 43 and 44 are semiconductor regions formed on the insulating film 52, 45, 46, 47 and 48 are contact holes for electrical connection with a metal wiring layer, and 49 is a semiconductor region 43 and An insulating film 44 for electrically separating 44 and the metal wiring layer, and 50 is a passivation film (passivation film) formed in the final step of the semiconductor integrated circuit.

The reason why the rectifying means is formed on the insulating layer is to completely insulate and separate the semiconductor element for rectification from the substrate 41 and eliminate a parasitic diode. So, for example, SOS (s
ilicon on saphire), SOI (silicon on insulator),
In an insulation isolation technique called SIPOX (silicon implanted oxidation) or the like, it can be realized with a simpler structure. This is because they can form an electrically independent element group on an insulating substrate instead of element isolation by a reverse bias of a pn junction.

FIG. 5 shows an example of the configuration of the voltage stabilizing means in the present invention. In the figure, 51 is a high-potential voltage input terminal from the rectifier, 52
Is a low potential voltage input terminal from the rectifier, 53 is an operational amplifier, 54 is a reference voltage source, 55 is a MOS field effect transistor, 5
6, 57 is a resistor, 58 is a stabilized high-potential power output terminal,
59 is a low potential power output terminal. Here, the unstable power supply voltage applied from the input terminal 51 is transmitted to the output terminal 58 via the MOS field-effect transistor 55.
Is higher than the voltage value determined by the divided resistors 56 and 57, the amount of voltage drop generated in the divided resistor 57 becomes larger than the set value, that is, the value of the reference voltage source 54. Therefore, the difference between the output voltage of the reference voltage source 54 and the voltage generated at the dividing resistor 57 is amplified by the operational amplifier 53 and applied as the gate voltage of the MOS field effect transistor 55. In the case of the present description, since the amount of voltage generated in the dividing resistor 57 is larger than the output of the reference voltage source 54, the inverting input voltage of the operational amplifier <the non-inverting input voltage, and the output voltage of the operational amplifier outputs the high potential power supply. Works like that. Therefore
Since the gate potential of the MOS field-effect transistor 55 approaches a high potential, that is, the vicinity of the unstable rectifier high potential voltage,
The drop between the source potential and the gate potential is reduced, and the conduction resistance of the field effect transistor 55 increases. As a result, the voltage at the output terminal 58 acts to be kept low. If the input voltage becomes lower than the set voltage, the operation is performed in a manner opposite to the above description, and the conduction effect of the field effect transistor 55 is reduced. By repeating such operations, the output voltage from the rectifier is stabilized, and a stable voltage suitable for the operation of the integrated circuit is obtained at the output terminal 58.

[Effects of the Invention] As described above, when the present invention is implemented, the necessity of incorporating a DC power supply into an electronic device is extremely reduced, and high-density assembly of the electronic device is facilitated.

Further, according to the present invention, it is possible to prevent the integrated circuit from being erroneously destroyed as in the case of a conventional integrated circuit.

The invention has a wide range of applications. For example, an electronic device mounted on an automobile can directly use an AC voltage generated by the power of an engine. In addition, most home electric appliances such as electric kettles, vacuum cleaners, electric washing machines, etc. can be applied to most of them. In addition, when used in solar cell driven electronic devices, the output voltage of the solar panel can be stabilized, and at the same time, the integrated circuit can be prevented from being damaged due to a mistake in the electrode connection of the solar panel when incorporated. The electronic device can operate. This is an example that significantly improves maintenance performance.
In addition, the mechanism of AC power generation and electronic circuit drive by an automatic winding mechanism found in some electronic timepieces can be widely applied to other portable devices.

[Brief description of the drawings]

FIG. 1 is a basic configuration diagram of the present invention, FIG. 2 is a diagram of a specific configuration example of the present invention, FIG. 3 is a plan view of an integrated circuit of the present invention, FIG. FIG. 5 is a configuration diagram of the power supply stabilizing means of the present invention. In the figure, 1,1 '... rectifying means 2, 2', 2 "... integrated circuit block 3, 3 ', 3" ... commercial power input terminal 4, 4', 4 "... commercial power input terminal 5, 5 ', 5 "... High potential line of integrated circuit block 6,6', 6" ... Low potential line of integrated circuit block 7 ... Power supply stabilizing means 31,32 ... Semiconductor area on insulating film 43,44 ... ... Semiconductor area on insulating film 53 ... Operational amplifier 54 ... Reference voltage source 55 ... MOS field effect transistor 56,57 ... Resistor

──────────────────────────────────────────────────続 き Continued on the front page (58) Surveyed fields (Int.Cl. ⁶ , DB name) H01L 21/822 H01L 21/8222 H01L 27/04 H01L 27/06 H01L 29/861

Claims (1)

(57) [Claims] 1. A semiconductor substrate, an insulating film formed on the semiconductor substrate, a P-type semiconductor region formed on the insulating film, and a P-type semiconductor region formed on the insulating film. A rectifier comprising a diode having an N-type semiconductor region disposed in contact with the semiconductor device, and a wiring layer connected to each of the P-type and N-type semiconductor regions; and smoothing an output voltage of the rectifier. And a stabilized power supply.