JP2000069755A - Rectifying circuit and semiconductor integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate production of a high density electronic apparatus by forming a pn junction rectifying means and a voltage stabilizing means on a thin isolation film between an integrated circuit board for forming an electronic circuit and a wiring layer thereby incorporating a DC power supply circuit in a semiconductor integrated circuit. SOLUTION: An electronic circuit for supplying an integrated circuit block 2 with DC power produced by rectifying and smoothing power from a commercial power supply applied to input terminals 3', 4' through a rectifying means 1' and a power supply stabilizing means 7 is constituted of a semiconductor integrated circuit. The rectifying means 1' is formed as pn junction diodes 8-11 in a semiconductor region on a silicon oxide film isolating a semiconductor substrate for forming the integrated circuit block 2 from a wiring layer. Similarly the power supply stabilizing means 7 is integrated by an integration process. According to the arrangement, power can be applied directly from a commercial power to the entire integrated circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an electronic circuit of a semiconductor integrated circuit.

[0002]

2. Description of the Related Art Conventionally, it has been considered to incorporate a power supply electronic circuit into a semiconductor integrated circuit in order to make it easier to supply power to the semiconductor integrated circuit. For example, when an integrated circuit having a significantly different voltage of the DC power supply system is incorporated in an electronic device, the integrated circuit can coexist with another electronic circuit power supply of the electronic device, and the number of external components can be reduced as much as possible. A good example is an attempt to build a DC stabilized power supply circuit at the power supply inlet.

[0003]

At present, the spread of chopper type power supply technology makes it easy to produce a desired DC power supply from a commercial power supply. However, it can be said that the space for assembling into electronic equipment is extremely large. Absent. Such a problem is increasingly not negligible in today's world where lightness and size are preferred.

An object of the present invention is to provide an effective method for solving such a problem by focusing on an integrated circuit for greatly reducing such a technical problem.

[0005]

According to the present invention, an integrated circuit substrate, an electronic circuit formed on the integrated circuit substrate, and the integrated circuit formed in a process of manufacturing the electronic circuit are concrete means for solving the problem. A thin film for insulating and separating a substrate and a wiring layer, a pn junction rectifying means formed on the thin film, and a voltage stabilizing means for stabilizing an output of the rectifying means; The anode of the rectifier is connected to the low potential input terminal of the voltage stabilizing means, and the power supply of the electronic circuit is provided by the output of the voltage stabilizing means.

It is characterized by being arranged as described above.

[0007]

The operation of the present invention will be described below with reference to specific examples.

FIG. 1 is a basic configuration diagram of the present invention. 1 in the figure
Is a rectifier, 2 is an integrated circuit block, 3 and 4 are commercial power (AC) input terminals, 5 is a high-potential power supply line of the integrated circuit block, 6 is a low-potential power supply line of the integrated circuit block, and 7 is power supply stabilizing means. It is.

When the commercial power supply is applied to the input terminals 3 and 4, the commercial power supply is rectified by the rectifier 1 to a quasi-DC voltage (pulsating flow) having a fluctuation of the frequency of the commercial power supply or twice the frequency of the commercial power supply. Is converted. The quasi DC voltage is smoothed and optimized by the power supply stabilizing means 7.

On the other hand, the voltage smoothed and optimized by the power supply stabilizing means 7 is applied to the integrated circuit block 2 to operate.

For the power supply stabilizing means 7, for example, if the integration process is a bipolar element process, a bipolar element is used as a voltage control element as a stabilizing circuit, and a band gap reference circuit, a Zener diode circuit, an error voltage amplifying circuit as a constant voltage generating circuit. The circuit may be a differential voltage amplifier such as an operational amplifier. In the case of a process such as CMOS, a work function difference generator for a gate material and a CMOS differential amplifier may be formed as a reference voltage generator. And it can be very easily integrated.

By integrating the rectifying means and the power stabilizing means as described above, it becomes possible to apply commercial power to the entire integrated circuit.

FIG. 2 shows a specific configuration example of the present invention. 1 '
Is a rectifier, 2 is an integrated circuit block, 3 'and 4' are commercial power supply input lines, 5 is a high potential power line of the integrated circuit block 2, 6 is a low potential power line of the integrated circuit block 2, and 7 is power supply stabilization. Means 8, 9, 10, and 11 are pn junction diodes formed on the same substrate as the integrated circuit block. Here, the rectifying means 1 'is constituted by pn junction diodes 8 to 11, and is a double-wave rectification, that is, a period in which the voltage polarity of the commercial power supply applied to the input terminals 3' and 4 'is switched over time with a positive voltage and a negative voltage. The rectification operation is performed in synchronization with. First, considering the case where a commercial power supply is applied with a positive voltage at 3 'and a negative voltage at 4', the positive voltage input from 3 'is applied to the anode of the diode 8. The current flowing out of the cathode of the diode 8 is supplied to the high-potential-side power supply line 5 of the power supply stabilization means 7-> the inside of the power supply stabilization means-> the power supply stabilization means 7
And enters the anode of the diode 10 via the path of the low-potential-side power supply line 6. At this time, since a voltage is applied to the diode 10 in the forward direction (that is, the direction in which current flows), the diode 10 conducts, and flows from the cathode of the diode 10 to the 4 'commercial power supply (negative voltage).

Next, the reverse operation will be considered. That is, considering the case where the commercial power is applied with a positive voltage at 4 'and a negative voltage at 3', the positive voltage input from 4 'is applied to the anode of the diode 9. The current flowing out of the cathode of the diode 9 is applied to the high potential side power supply line 5 of the integrated circuit block 2.
-> Inside the integrated circuit block-> The anode of the diode 11 enters the path of the low potential side power supply 6 of the integrated circuit block 2. At this time, the voltage is applied to the diode 11 in the forward direction (that is, the direction in which the current flows), so that the diode 11 conducts,
1 flows into the 3 'commercial power supply (negative voltage) from the cathode. As is apparent from the above description, the rectifying means composed of the diodes 8 to 11 makes the polarity of the power supply applied to the integrated circuit block 2 one-sided in accordance with the alternating operation of the voltage polarity of the commercial power supply. Can operate normally.

FIG. 3 is an integrated plan view of the rectifier shown in FIG. 3 ″ and 4 ″ in the figure are metal wiring for commercial power input,
5 'is a metal wiring for supplying a high potential of the integrated circuit block, 6'
Are metal wirings for supplying a low potential of the integrated circuit block;
2 is a semiconductor region formed on the insulating layer, 33, 34, 3
Reference numerals 5 and 36 denote pn junction boundaries formed in the semiconductor regions 31 and 32, and reference numerals 37, 38, 39, 40, 41 and 42 denote power supply metal wirings (3 ″, 4 ″, 5 ′ and 6 ′). Semiconductor region 3
These are contact holes (holes in an insulating layer) for electrically connecting the first and second electrodes 32 to each other.

FIG. 4 is a sectional view of the rectifying means integrated portion. In the figure, 4 ″ is a metal layer for inputting commercial power, 5 ′ is a metal wiring for supplying a high potential of the integrated circuit block, 6 ′ is a metal wiring for supplying a low potential of the integrated circuit block, 51 is a semiconductor substrate for forming an integrated circuit, 52 is a silicon oxide insulating film, 43 and 44 are insulating films 5
Semiconductor regions 45, 46, 47, 4 formed on
8 is a contact hole for electrical connection with the metal wiring layer, 49 is an insulating film for electrically separating the semiconductor regions 43 and 44 from the metal wiring layer, and 50 is formed in the final step of the semiconductor integrated circuit. It is a passivation film (passivation film).

The reason why the rectifying means is formed on the insulating layer is to completely insulate and separate the semiconductor element for rectification from the substrate 41 and eliminate the parasitic diode. Therefore, for example, SOS (silicon on saphire), SOI (sili
con on insulator), SIPOX (silicon implant)
In the case of an insulation separation technique called ed oxidation, etc., it can be realized with a simpler structure. This is because they can form an electrically independent element group on an insulating substrate instead of element isolation by a reverse bias of a pn junction.

FIG. 5 shows an example of the configuration of the voltage stabilizing means according to the present invention. In the figure, 51 is a high potential voltage input terminal from the rectifier, 52 is a low potential voltage input terminal from the rectifier, 5
3 is an operational amplifier, 54 is a reference voltage source, 55 is a MOS field effect transistor, 56 and 57 are resistors, 58 is a stabilized high potential power output terminal, and 59 is a low potential power output terminal. Here, the unstable power supply voltage applied from the input terminal 51 is transmitted to the output terminal 58 via the MOS field-effect transistor 55, and the voltage appearing at the output terminal 58 becomes the voltage value determined by the division resistors 56 and 57. When the value is higher, the amount of voltage drop generated in the divided resistor 57 becomes larger than the set value, that is, the value of the reference voltage source 54. Therefore, the output voltage of the reference voltage source 54 and the dividing resistor 57
Is amplified by the operational amplifier 53 and applied as the gate voltage of the MOS field effect transistor 55. In the case of the present description, since the voltage generated in the dividing resistor 57 is larger than the output of the reference voltage source 54, the inverted input voltage of the operational amplifier <the non-inverted input voltage, and the output voltage of the operational amplifier outputs the high potential power supply. Works like that. Therefore, the gate potential of the MOS field-effect transistor 55 approaches a high potential, that is, near the unstable rectifier high potential voltage, so that the drop between the source potential and the gate potential becomes small, and the conduction resistance of the field-effect transistor 55 increases. become. As a result, the voltage at the output terminal 58 acts to be kept low. If the input voltage becomes lower than the set voltage, the operation is performed in a manner opposite to the above description, and the conduction effect of the field effect transistor 55 is reduced. By repeating such operations, the output voltage from the rectifier is stabilized, and a stable voltage suitable for the operation of the integrated circuit is obtained at the output terminal 58.

[0019]

As described above, according to the present invention, the necessity of incorporating a DC power supply into electronic equipment is extremely reduced, and high-density assembly of electronic equipment is facilitated.

Further, according to the present invention, it is possible to prevent the integrated circuit from being erroneously destroyed as in the case of the conventional integrated circuit.

The invention has a wide range of applications. For example, an electronic device mounted on an automobile can directly use an AC voltage generated by the power of an engine. In addition, most home electric appliances such as electric kettles, vacuum cleaners, electric washing machines, etc. can be applied to most of them. In addition, when used in solar cell driven electronic devices, the output voltage of the solar panel can be stabilized, and at the same time, the integrated circuit can be prevented from being damaged due to a mistake in the electrode connection of the solar panel when incorporated. The electronic device can operate. This is an example that significantly improves maintenance performance. Also, the mechanism of AC power generation and electronic circuit drive by an automatic winding mechanism found in some electronic timepieces can be more widely applied to other forms of equipment.

[Brief description of the drawings]

FIG. 1 is a basic configuration diagram of the present invention.

FIG. 2 is a diagram of a specific configuration example of the present invention.

FIG. 3 is a plan view of an integrated circuit according to the present invention.

FIG. 4 is a cross-sectional view of the integrated circuit of the present invention.

FIG. 5 is a diagram or a configuration of a power supply stabilizing unit of the present invention.

[Explanation of symbols]

 1, 1 '... rectifying means 2, 2', 2 "... integrated circuit block 3, 3 ', 3" ... commercial power input terminal 4, 4', 4 "... commercial power input terminal 5, 5 ′, 5 ″ integrated circuit block high-potential line 6, 6 ′, 6 ″ integrated circuit block low-potential line 7 power stabilizing means 31, 32 semiconductor region 43 on insulating film 43 44 semiconductor region on insulating film 53 operational amplifier 54 reference voltage source 55 MOS field effect transistors 56 and 57 resistors

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[Procedure amendment]

[Submission date] July 26, 1999 (1999.7.2)
6)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Name of invention

[Correction method] Change

[Correction contents]

Title of the invention Rectifier circuit and semiconductor integrated circuit

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 3]

[Document name to be amended] Drawing

[Correction target item name] Figure 2

[Correction method] Change

[Correction contents]

FIG. 2

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H02M 7/04

Claims (1)

[Claims] 1. An integrated circuit substrate, an electronic circuit formed on the integrated circuit substrate, a thin insulating film between the integrated circuit substrate and a wiring layer formed in a process of manufacturing the electronic circuit, and formed on the thin film Rectifying means, and voltage stabilizing means for stabilizing the output of the rectifying means. The cathode of the rectifying means is connected to a high potential input terminal of the voltage stabilizing means, and the anode of the rectifying means is connected to the An integrated circuit connected to a low potential input terminal of a voltage stabilizing means, wherein power of the electronic circuit is provided by an output of the voltage stabilizing means.