JPS63160285A - Constant current light emitting diode and manufacture of the same - Google Patents
Constant current light emitting diode and manufacture of the sameInfo
- Publication number
- JPS63160285A JPS63160285A JP62311813A JP31181387A JPS63160285A JP S63160285 A JPS63160285 A JP S63160285A JP 62311813 A JP62311813 A JP 62311813A JP 31181387 A JP31181387 A JP 31181387A JP S63160285 A JPS63160285 A JP S63160285A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- constant current
- led
- current light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000005669 field effect Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010276 construction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 241001156002 Anthonomus pomorum Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/395—Linear regulators
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、定電流発光ダイオード（定電流ＬＥＤ）に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to constant current light emitting diodes (constant current LEDs).
可変運転電圧による発光ダイオード（ＬＥＤ）の運転時
もしくは直列抵抗なしのか−る発光ダイオードの運転時
には、発光ダイオードに定電流を供給するように特別な
措置が講じられなければならない。When operating light emitting diodes (LEDs) with variable operating voltages or without series resistance, special measures must be taken to supply the light emitting diodes with a constant current.
従来この問題はハイブリッド抵抗によるかまたは発光ダ
イオード（ＬＥＤ）のケース内に特別に構成された電気
スイッチング回路により解決されていた。Traditionally, this problem has been solved by hybrid resistors or by specially constructed electrical switching circuits within the case of the light emitting diode (LED).
〔発明が解決しようとする問題点〕
従来の解決策は高価で複雑な定電流発光ダイオードの構
成を必要とする。PROBLEMS SOLVED BY THE INVENTION Conventional solutions require expensive and complex constant current light emitting diode constructions.
本発明の目的は、簡単な構成と簡単な製造方法を可能に
する定電流発光ダイオードを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a constant current light emitting diode that allows a simple construction and a simple manufacturing method.
上記目的は、本発明によれば、定電流を決める装置とし
て一定のゲートパソース電圧を持つ電界効果トランジス
タ構成要素を備えているごとにより達成される。The above object is achieved according to the invention by providing a field effect transistor component with a constant gate-source voltage as a device for determining the constant current.
本発明の有利な実施態様は特許請求の範囲第２項以下、
または後で参照する図面およびその説明に示されている
。Advantageous embodiments of the invention are as follows from claims 2 onwards:
or as shown in the drawings and descriptions hereinafter referred to.
定電流特性を持った簡単なトランジスタ構成要素として
、ＪＦＥＴ（接合形電界効果トランジスタないし接合ゲ
ート阻止形電界効果トランジスタ）または一定のゲート
・ソース電圧を持つＭＩＳＦＥＴもしくはＭＯＳＦＥＴ
が捉供されている。A simple transistor component with constant current characteristics is a JFET (Junction Field Effect Transistor or Junction Gate Blocking Field Effect Transistor) or a MISFET or MOSFET with a constant gate-source voltage.
is being captured.
特に、ｐチャネル・デプレッション形ＭＯＳトランジス
タが使用される。か−るトランジスタとしてＳＩＰＭＯ
３）ランジスタを使用することができる。ｐチャネル・
デプレッシゴン形ＭＯ３）ランジスタの選択によって、
有利なやり方にて、発光ダイオード（ＬＥＤ）のカソー
ドとＭＯＳトランジスタのソース電極との間の直接の電
気接続が可能となる。この電気接続は、チップ組立と同
様に、チップ組立の専門家の使用する公知の方法で実施
することができる０発光ダイオード（ＬＥＤ）のカソー
ドとＭＯＳ）ランジスタのソース電極との間のか＼る電
気接続は、例えば導電性の接着剤２合金等により行うこ
とができる。In particular, p-channel depletion type MOS transistors are used. SIPMO as a transistor
3) A transistor can be used. p channel・
By selecting the depressigon type MO3) transistor,
In an advantageous manner, a direct electrical connection between the cathode of the light emitting diode (LED) and the source electrode of the MOS transistor is made possible. This electrical connection between the cathode of the light emitting diode (LED) and the source electrode of the transistor (MOS) can be made in a manner known to those skilled in the art of chip assembly as well as chip assembly. The connection can be made using, for example, a conductive adhesive 2 alloy.
発光ダイオード（ＬＥＤ）のカソードと該当ＭＯＳトラ
ンジスタのソース電極との間を直接に電気接続する場合
には、例えば３００μｍ×３００μｍの等しい大きさの
チップ寸法を選択するとよい０等しい大きさのチップ寸
法の選択は、有利なことに、それぞれ発光ダイオード（
ＬＥＤ）と一定のゲート・ソース電圧を持つトランジス
タ七からなる複数のシステムの同時接続を可能にする。When making a direct electrical connection between the cathode of a light emitting diode (LED) and the source electrode of the corresponding MOS transistor, it is recommended to select chip dimensions of equal size, for example 300 μm x 300 μm. The selection is advantageous, respectively light-emitting diodes (
It allows simultaneous connection of multiple systems consisting of LEDs) and transistors with a constant gate-source voltage.
このようにして全体の半導体板（ウェーハ）の同時の電
気接続が可能となり、あるいは使用半導体板（ウェーハ
）の直径が異なる場合には全体の半導体板の部分の同時
の電気接続が可能となる。異なる全体の半導体板または
全体の半導体板の異なる部分の相互の調整は１つ以上の
特別な調整マークを介して赤外線（［Ｒ）範囲で行うこ
とができる。全体の半導体板の相互の電気接続もしくは
全体の半導体板の部分の相互の電気接続の後に、それぞ
れ発光ダイオード（ＬＥＤ）と一定のゲート・ソース電
圧を持つトランジスタとからなる個々のシステムを同時
に切断することができる。所謂メサ形発光ダイオード（
Ｌ ［’、 Ｄ ）を用いる場合には、発光ダイオード
（ＬＥＤ）と一定のゲート・ソース電圧を持つトランジ
スタとの間の接続に役立ち且つ万一の損傷エツチング使
用の際にも腐食されない接続材料が使用されなければな
らない。In this way, a simultaneous electrical connection of the entire semiconductor board (wafer) or, if the semiconductor boards (wafers) used have different diameters, a simultaneous electrical connection of parts of the entire semiconductor board is possible. The mutual adjustment of different complete semiconductor boards or different parts of a complete semiconductor board can take place in the infrared ([R) range via one or more special adjustment marks. After the mutual electrical connection of the entire semiconductor board or the mutual electrical connection of parts of the entire semiconductor board, the individual systems each consisting of a light-emitting diode (LED) and a transistor with a constant gate-source voltage are simultaneously disconnected. be able to. So-called mesa-shaped light emitting diode (
When L [', D ) is used, a connecting material is used that serves to connect a light emitting diode (LED) and a transistor with a constant gate-source voltage and that does not corrode even in the unlikely event of damaging etching use. must be used.
ブレナ形発光ダイオード使用時にも非ブレナ形発光ダイ
オード使用時にも基本的には個々のチップ処理は同様に
可能である。In principle, individual chip processing is equally possible when using Brenna light-emitting diodes and when using non-Brenner light-emitting diodes.
本発明は通常の標準ＬＥＤケースを用いた特別に低コス
トの解決策を可能にする。The invention allows a particularly low-cost solution using the usual standard LED case.
発光ダイオード（ＬＥＤ）に定電流を供給するための可
能な定電流源として、基本的にはＭＯ３ＦＥＴ構成要素
またはＪＦＥＴ構成要素が使用される。これらの電界効
果トランジスタ構成要素の縦型実施は、ｐチャネル・デ
プレッション形トランジスタを使用する場合に発光ダイ
オード（ＬＥＤ）とのカソードと電界トランジスタのソ
ース電極との間の直接の電気接続を可能にする。As a possible constant current source for supplying the light emitting diodes (LEDs) with a constant current, MO3FET components or JFET components are basically used. The vertical implementation of these field-effect transistor components allows a direct electrical connection between the cathode of the light-emitting diode (LED) and the source electrode of the field-effect transistor when using p-channel depletion-type transistors. .
以下、図面を参照しながら本発明の実施例について詳細
に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明による定電流発光ダイオードの等価回路
図を示し、第２図は本発明実施例の概略構成図を示す。FIG. 1 shows an equivalent circuit diagram of a constant current light emitting diode according to the present invention, and FIG. 2 shows a schematic configuration diagram of an embodiment of the present invention.
第１図はアノードＡおよびカソードＫを持つ発光ダイオ
ードＬＥＤを備えた定電流発光ダイオード（定電流ＬＥ
Ｄ）の等価向路図を示す０発光ダイオードＬＥＤのカソ
ードには電界効果トランジスタＭＯ５ＦＥＴのソース電
極Ｓと直接に接続されている。この電界効果トランジス
タＭＯ３ＦＥＴはソースＳとゲートＧとの間に一定のゲ
ート・ソース電圧を有し、したがって定電流特性を存す
る。最も簡単な場合には、デプレッション形電界効果ト
ランジスタにおいてゲートＧがソースＳと同電位に置か
れる０発光ダイオードＬＥＤのアノードＡと電界効果ト
ランジスタＭＯ３ＦＩＥＴのドレイン電極りとの間の運
転電圧が変化する場合にも、発光ダイオードＬＥＤのア
ノードＡとカソードにとの間に定電流が流れる。ＭＯ３
ＦＥＴ電界効果トランジスタの代わりに、もちろん基本
的に一定ゲート・ソース電圧を持つ他のあらゆる電界効
果トランジスタが使用できる。Figure 1 shows a constant current light emitting diode (constant current LED) with a light emitting diode LED having an anode A and a cathode K.
The cathode of the light-emitting diode LED shown in D) is directly connected to the source electrode S of the field effect transistor MO5FET. This field effect transistor MO3FET has a constant gate-source voltage between the source S and the gate G, and therefore has constant current characteristics. In the simplest case, the gate G is placed at the same potential as the source S in a depletion field-effect transistor, when the operating voltage between the anode A of the light-emitting diode LED and the drain electrode of the field-effect transistor MO3FIET changes. Also, a constant current flows between the anode A and the cathode of the light emitting diode LED. MO3
Instead of the FET field effect transistor, of course any other field effect transistor with an essentially constant gate-source voltage can be used.
第２図は第１図による定電流発光ダイオードの実施例の
構成を概略的に示す、定電流発光ダイオードは２つの電
気接続部１．２を持つ、電気接続部１上にはｐチャネル
・デプレッション形電界効果トランジスタＭＯ３ＦＥＴ
が配置されている。FIG. 2 schematically shows the construction of an embodiment of the constant current light emitting diode according to FIG. 1, the constant current light emitting diode having two electrical connections 1.2, on electrical connection 1 there is a p-channel depression Type field effect transistor MO3FET
is located.
この選択により、発光ダイオードＬＥＤのカソードにと
電界効果トランジスタＭＯＳ Ｆ ＥＴのソース電極Ｓ
との間の直接の電気接続の可能性が生じる。第２図によ
る実施例においては、ゲートＧおよびソースＳが唯一の
！＃１ｉＧ／Ｓに纏められている１発光ダイオードＬＥ
Ｄは、チップ組立と同じように専門家にとって使用可能
な組立方法にて電界効果トランジスタＭＯ３ＦＥＴ上に
、例えば導電性接着剤２合金等により固定することがで
きる。With this selection, the cathode of the light emitting diode LED and the source electrode S of the field effect transistor MOS FET
This creates the possibility of a direct electrical connection between In the embodiment according to FIG. 2, the gate G and source S are unique! 1 light emitting diode LE grouped into #1iG/S
D can be fixed onto the field effect transistor MO3FET by an assembly method available to experts, similar to chip assembly, for example with conductive adhesive 2 alloy.
電界効果トランジスタＭＯ３ＦＥＴについても発光ダイ
オードＬＥＤについても等しい大きさのチップ寸法（例
えば３００１ｍＸ３００μｍ）が選ばれるならば、同時
に対をなして複数の電界効果トランジスタＭＯ５ＦＥＴ
および発光ダイオードＬＥＤを互いに接続することがで
きる。電界効果トランジスタＭＯ３ＦＥＴおよび発光ダ
イオードＬＥＤのためにか−る等しい大きさのチップ寸
法選択の場合には、等しいウェーハ直径において電界効
果トランジスタＭＯ３ＦＥＴを備えたウェーハと発光ダ
イオードＬＥＤを備えたウェーハとを互いに位置１！！
整して互いに接続することができる。か＼るウェーハの
位置調整は赤外線（ｆＲ）範囲における１つ以上の特別
な調整マークを介して可能である。異なるウェーハ直径
の場合には、一部のウェーハを１つの全体のウェーハま
たは１つのウェーハの部分と同時に接続することができ
る。続いて、対をなして互いに接続されたシステムが同
時に切り取られる。所謂メサ形発光ダイオードＬＥＤを
使用する場合には、発光ダイオードＬＥＤと電界効果ト
ランジスタＭＯ３ＦＥＴとの間の接続に役立つ接続材料
（グイボンディング）Ｄｌとして万一の損傷エツチング
使用時にも腐食されない接続材料を使用しなければなら
ない。If the same chip dimensions (e.g. 3001 m x 300 μm) are chosen for both the field effect transistor MO3FET and the light emitting diode LED, then several field effect transistors MO5FET can be simultaneously formed in pairs.
and a light emitting diode LED can be connected to each other. In the case of selecting such equally large chip dimensions for the field-effect transistor MO3FET and the light-emitting diode LED, the wafer with the field-effect transistor MO3FET and the wafer with the light-emitting diode LED are positioned relative to each other at equal wafer diameters. 1! !
can be arranged and connected to each other. Such wafer alignment is possible via one or more special alignment marks in the infrared (fR) range. In the case of different wafer diameters, some wafers can be connected simultaneously with one whole wafer or with parts of one wafer. Subsequently, the systems connected to each other in pairs are cut out at the same time. When using a so-called mesa-shaped light emitting diode LED, a connecting material (guibonding) Dl that is useful for connecting the light emitting diode LED and the field effect transistor MO3FET is used as a connecting material that will not corrode even in the event of damage or etching use. Must.
プレナ形発光ダイオード使用時にも非プレナ発光ダイオ
ード使用時にも基本的には個々のチップの処理は同様に
可能である。In principle, the processing of individual chips is equally possible when using planar light-emitting diodes as well as when using non-planar light-emitting diodes.
第１図および第２図による装置は標準ＬＥＤケースの使
用を可能にし、したがって低コストの定電流発光ダイオ
ードの製造を可能にする。電界効果トランジスタＭＯ５
ＦＥＴとしては、Ｏｖのゲート・ソース間電圧Ｖｓｓ、
１０ ｍＡ （クラス：８〜１２ｍＡ）のソース・
ドレイン間定電流ｔｏｗおよび約５０〜１００Ｖのドレ
イン・ソース間電圧ｖ■を持つｐチャネル・デプレッシ
ョン形ＳＩＰＭＯ５）ランジスタを使用することができ
る。ゲート・ソース間電圧をＯｖにするために、ゲート
ＧとソースＳとを金属化により結合してもよい。The device according to FIGS. 1 and 2 allows the use of standard LED cases and thus the production of low-cost constant current light emitting diodes. Field effect transistor MO5
As a FET, the gate-source voltage Vss of Ov,
10 mA (class: 8-12 mA) source
A p-channel depletion type SIPMO5) transistor with a constant drain current tow and a drain-source voltage v2 of about 50-100V can be used. In order to make the gate-source voltage Ov, the gate G and the source S may be coupled by metallization.
発光ダイオードＬＥＤとしては、３００ＩＩｍ×３００
μｍのチップ面積を持ち、上にアノードＡのあるダイオ
ードを使用することができる０発光ダイオードＬＥＤの
技術はその他は任意である。As a light emitting diode LED, 300IIm x 300
The technology of the 0 light emitting diode LED, which can use a diode with a chip area of μm and an anode A on top, is otherwise arbitrary.
勿論、電界効果トランジスタＭＯ５ＦＥＴおよび発光ダ
イオードＬＥＤのチップ寸法は等しい大きさである必要
はない、しかし、等しい大きさのチップ寸法は製造上有
利である。Of course, the chip dimensions of the field effect transistor MO5FET and the light emitting diode LED do not have to be of equal size, however, equal sized chip dimensions are advantageous in manufacturing.
定電流源としては、代わりに、第２図の装置において他
の縦形ＭＯ３ＦＥＴまたはＪＦＥＴ）ランジスタを使用
することができる。第２図による装置は、等しいチップ
寸法の場合に、シリコン上への発光ダイオードＬＥＤの
組立のために、劣る排熱並びに損失パワーの結果として
の付加的な加熱を持つ、この欠点を避けるために、例え
ばＯｖのゲート・ソース間電圧■。、を待ったｎチャネ
ル・デプレッション形ＭＯ３ＦＥＴトランジスタが電気
接続部２の上に据えられ、それから発光ダイオードＬＥ
Ｄの電界効果トランジスタのアノードＡとｎチ中ネル・
デプレッション形Ｍ・０３ＦＥＴトランジスタのソース
電橋との間の電気接続は、第２図におけるボンディング
接続と同様のチップからチップへのボンディング接続を
介して行われる。その場合に、ｎチャネルＭＯ３ＦＥＴ
）ランジスタのドレイン電極はグイボンディング接続に
より電気接続部２上に固定されている。As a constant current source, other vertical MO3FET or JFET transistors can alternatively be used in the device of FIG. In order to avoid this drawback, the device according to FIG. 2 has an inferior heat dissipation as well as an additional heating as a result of the power losses due to the assembly of light emitting diodes LED on silicon in the case of equal chip dimensions. , for example, the gate-source voltage of Ov. , an n-channel depletion type MO3FET transistor is placed on the electrical connection 2, and then a light emitting diode LE
The anode A of the field effect transistor D and the n channel
The electrical connection between the source bridge of the depletion mode M.03 FET transistor is made via a chip-to-chip bond connection similar to the bond connection in FIG. In that case, n-channel MO3FET
) The drain electrode of the transistor is fixed on the electrical connection 2 by means of a bonding connection.
第２図では電界効果トランジスタＭＯＳ Ｆ ＥＴが通
常のチップ組立法（グイボンディングＤ２）により電気
接続部ｌ上に固定されている。In FIG. 2, a field effect transistor MOS FET is fixed on the electrical connection l by the usual chip assembly method (guid bonding D2).
以上のように、本発明によれば、定電流を決める装置と
して一定のゲート・ソース電圧を持つ電界効果トランジ
スタ構成要素を備えている定電流発光ダイオードによっ
て、簡単な構成と簡単な製造方法を可能にする定電流発
光ダイオードを提供することができる。As described above, according to the present invention, a constant current light emitting diode having a field effect transistor component with a constant gate-source voltage as a device for determining the constant current allows a simple construction and a simple manufacturing method. A constant current light emitting diode can be provided.
第１図は本発明による定電流発光ダイオードの等価回路
図、第２図は本発明実施例の概略構成図である。
ＬＥＤ・・・発光ダイオード、Ａ・・・アノード、Ｋ・
・・カソード、ＭＯＳ Ｆ ＥＴ・・・ＭＯ３電界効果
トランジスタ、Ｓ・・・ソース、Ｄ・・・ドレイン、Ｇ
・・・ゲート、ＤＩ、Ｄ２・・・グイボンディング、１
．２・・・電気接続部。FIG. 1 is an equivalent circuit diagram of a constant current light emitting diode according to the present invention, and FIG. 2 is a schematic configuration diagram of an embodiment of the present invention. LED...Light emitting diode, A...Anode, K...
...Cathode, MOS FET...MO3 field effect transistor, S...Source, D...Drain, G
... Gate, DI, D2 ... Gui bonding, 1
．． 2...Electrical connection part.
Claims (1)
圧を持つ電界効果トランジスタ構成要素を備えているこ
とを特徴とする定電流発光ダイオード。 ２）定電流を決める装置としてＰチャネル・デプレッシ
ョン形トランジスタ構成要素を備えていることを特徴と
する特許請求の範囲第１項に記載の定電流発光ダイオー
ド。 ３）発光ダイオード（ＬＥＤ）のカソード（Ｋ）とトラ
ンジスタ構成要素（ＭＯＳＦＥＴ）のソース（Ｓ）との
間が直接に電気接続されていることを特徴とする特許請
求の範囲第２項に記載の定電流発光ダイオード。 ４）発光ダイオード（ＬＥＤ）のカソード（Ｋ）とトラ
ンジスタ構成要素（ＭＯＳＦＥＴ）のソース（Ｓ）との
間が導電性接着剤（Ｄ１）にて接続されていることを特
徴とする特許請求の範囲第３項に記載の定電流発光ダイ
オード。 ５）発光ダイオード（ＬＥＤ）のカソード（Ｋ）とトラ
ンジスタ構成要素（ＭＯＳＦＥＴ）のソース（Ｓ）との
間が合金接続されていることを特徴とする特許請求の範
囲第３項に記載の定電流発光ダイオード。 ６）ブレナ形発光ダイオード（ＬＥＤ）を特徴とする特
許請求の範囲第１項ないし第３項のいずれか１項に記載
の定電流発光ダイオード。 ７）ｎチャネル・デプレッション形トランジスタ構成要
素を特徴とする特許請求の範囲第１項に記載の定電流発
光ダイオード。 ８）それぞれ発光ダイオード（ＬＥＤ）とトランジスタ
構成要素（ＭＯＳＦＥＴ）とからなう複数のシステムが
同時に電気接続されることを特徴とする定電流発光ダイ
オードの製造方法。 ９）赤外線（ＩＲ）範囲における特別な調整マークを介
して調整されることを特徴とする特許請求の範囲第８項
に記載の定電流発光ダイオードの製造方法。 １０）複数のシステムが同時に切り取られることを特徴
とする特許請求の範囲第８項または第９項に記載の定電
流発光ダイオードの製造方法。Claims: 1) A constant current light emitting diode, characterized in that it comprises a field effect transistor component with a constant gate-source voltage as a device for determining the constant current. 2) Constant current light emitting diode according to claim 1, characterized in that it comprises a P-channel depletion type transistor component as a device for determining the constant current. 3) According to claim 2, there is a direct electrical connection between the cathode (K) of the light emitting diode (LED) and the source (S) of the transistor component (MOSFET). Constant current light emitting diode. 4) A claim characterized in that the cathode (K) of the light emitting diode (LED) and the source (S) of the transistor component (MOSFET) are connected by a conductive adhesive (D1). Constant current light emitting diode according to item 3. 5) The constant current according to claim 3, characterized in that an alloy connection is made between the cathode (K) of the light emitting diode (LED) and the source (S) of the transistor component (MOSFET). light emitting diode. 6) The constant current light emitting diode according to any one of claims 1 to 3, which is a Brenna type light emitting diode (LED). 7) Constant current light emitting diode according to claim 1, characterized by an n-channel depletion type transistor component. 8) A method for manufacturing a constant current light emitting diode, characterized in that a plurality of systems, each consisting of a light emitting diode (LED) and a transistor component (MOSFET), are electrically connected simultaneously. 9) A method for manufacturing a constant current light emitting diode according to claim 8, characterized in that it is adjusted via special adjustment marks in the infrared (IR) range. 10) The method for manufacturing a constant current light emitting diode according to claim 8 or 9, characterized in that a plurality of systems are cut out at the same time.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3642240.1 | 1986-12-10 | ||
| DE19863642240 DE3642240A1 (en) | 1986-12-10 | 1986-12-10 | Constant-current light-emitting diode (constant-current LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63160285A true JPS63160285A (en) | 1988-07-04 |
Family
ID=6315913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62311813A Pending JPS63160285A (en) | 1986-12-10 | 1987-12-08 | Constant current light emitting diode and manufacture of the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS63160285A (en) |
| DE (1) | DE3642240A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009135226A (en) * | 2007-11-29 | 2009-06-18 | Nichia Corp | Constant current diode and light-emitting device with the same |
| JP2014096576A (en) * | 2012-10-10 | 2014-05-22 | Citizen Electronics Co Ltd | LED Drive circuit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2764567B1 (en) * | 1997-06-12 | 1999-08-20 | Vibrachoc Sa | LIGHTING DEVICE AND INSTRUMENT PANEL COMPRISING SUCH A DEVICE |
| TW201038132A (en) * | 2009-04-10 | 2010-10-16 | Advanced Connectek Inc | AC LED having current regulative diode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2127239A5 (en) * | 1971-03-01 | 1972-10-13 | Radiotechnique Compelec | |
| DE2304506B2 (en) * | 1973-01-31 | 1977-05-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | CIRCUIT FOR OPERATING A LUMINESCENT SEMICONDUCTOR COMPONENT |
| DE3106798A1 (en) * | 1981-02-24 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor arrangement |
-
1986
- 1986-12-10 DE DE19863642240 patent/DE3642240A1/en not_active Withdrawn
-
1987
- 1987-12-08 JP JP62311813A patent/JPS63160285A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009135226A (en) * | 2007-11-29 | 2009-06-18 | Nichia Corp | Constant current diode and light-emitting device with the same |
| JP2014096576A (en) * | 2012-10-10 | 2014-05-22 | Citizen Electronics Co Ltd | LED Drive circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3642240A1 (en) | 1988-06-23 |
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