JP2983729B2 - Adhesive tape for fixing semiconductor wafers - Google Patents

Adhesive tape for fixing semiconductor wafers

Info

Publication number
JP2983729B2
JP2983729B2 JP3303814A JP30381491A JP2983729B2 JP 2983729 B2 JP2983729 B2 JP 2983729B2 JP 3303814 A JP3303814 A JP 3303814A JP 30381491 A JP30381491 A JP 30381491A JP 2983729 B2 JP2983729 B2 JP 2983729B2
Authority
JP
Japan
Prior art keywords
ethylene
adhesive tape
layer
sensitive adhesive
copolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3303814A
Other languages
Japanese (ja)
Other versions
JPH05117600A (en
Inventor
宏志 中山
憲司 望木
栄二 白松
伸一 石渡
和繁 岩本
守邦 長谷部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP3303814A priority Critical patent/JP2983729B2/en
Publication of JPH05117600A publication Critical patent/JPH05117600A/en
Application granted granted Critical
Publication of JP2983729B2 publication Critical patent/JP2983729B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、各種半導体を製造する
工程において使用する粘着テープに関し、さらに詳しく
いえば、例えばパターンを形成したウエハを一つ一つの
パターン毎に切断し半導体素子として分割する際に使用
する半導体ウエハ固定用の放射線硬化性粘着テープに関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape used in a process for manufacturing various semiconductors. More specifically, for example, a wafer on which a pattern is formed is cut into individual patterns and divided into semiconductor elements. The present invention relates to a radiation-curable pressure-sensitive adhesive tape for fixing a semiconductor wafer used at the time.

【0002】[0002]

【従来の技術】従来、回路パターンの形成された半導体
ウエハを素子小片に切断分離するダイシング加工を行う
際は、放射線硬化型粘着テープを用いるピックアップ方
式が提案されている。
2. Description of the Related Art Conventionally, a pickup method using a radiation-curable pressure-sensitive adhesive tape has been proposed when performing dicing for cutting and separating a semiconductor wafer on which a circuit pattern is formed into element pieces.

【0003】これは放射線、例えば紫外線のような光、
または電子線のような電離性放射線を透過する基材フィ
ルムと、この基材フィルム上に塗工された放射線照射に
より硬化する性質を有する粘着剤層とからなる半導体ウ
エハ固定用粘着テープを用いる方法である。これは、よ
り詳しくはダイシング加工時の素子固定粘着力を強接着
力とし、半導体ウエハを素子小片に切断分離後、基材フ
ィルム側より放射線照射を行い放射線硬化型粘着剤層を
硬化させて、素子固定粘着力を大幅に低下させて素子小
片の大きさに関係なく、例えば25mm2 以上の大きな素
子であっても容易にピックアップすることができるよう
にした方式である。
This is radiation, for example light such as ultraviolet light,
Or a method using a pressure-sensitive adhesive tape for fixing a semiconductor wafer comprising a base film that transmits ionizing radiation such as an electron beam, and a pressure-sensitive adhesive layer coated on the base film and having a property of being cured by irradiation with radiation. It is. More specifically, the element fixing adhesive force at the time of dicing processing is made to be a strong adhesive force, and after cutting and separating the semiconductor wafer into element pieces, irradiation is performed from the base film side to cure the radiation-curable adhesive layer, This is a method in which the element fixing adhesive force is greatly reduced so that a large element of, for example, 25 mm 2 or more can be easily picked up regardless of the size of the element piece.

【0004】この方式は、放射線透過性の基材フィルム
上に放射線硬化性粘着剤を塗工した半導体ウエハ固定用
粘着テープの粘着剤層中に含まれる放射線硬化性化合物
を放射線照射によって硬化させ粘着剤に三次元網状化構
造を与えて、その流動性と粘着力を著しく低下させる原
理に基づくものである。
In this method, a radiation-curable compound contained in a pressure-sensitive adhesive layer of a pressure-sensitive adhesive tape for fixing a semiconductor wafer, in which a radiation-curable pressure-sensitive adhesive is coated on a radiation-transparent substrate film, is cured by irradiation with radiation to form an adhesive. It is based on the principle that a three-dimensional network structure is given to the agent to significantly reduce its fluidity and adhesive strength.

【0005】しかし、このような粘着テープでは放射線
硬化性化合物の硬化反応により粘着剤を硬化させて三次
元網状化構造を与え粘着力を低下させるため、ダイシン
グ加工時に有していた粘着テープのゴム状弾性がピック
アップ時には殆ど無くなってしまう結果となる。このた
め、従来行われていた粘着テープの放射状延伸による素
子間隙の拡大ができなくなるという問題が生じている。
However, in such an adhesive tape, the adhesive is cured by a curing reaction of a radiation-curable compound to give a three-dimensional network structure and reduce the adhesive strength. As a result, the shape elasticity is almost lost during pickup. For this reason, there has been a problem that the element gap cannot be enlarged by the conventional radial stretching of the adhesive tape.

【0006】この問題を解決するため、すでに軟質ポリ
塩化ビニル(PVC)を基材フィルムの中心層とするも
のが実用化されているが、ポリ塩化ビニルは塩素系樹脂
であり、しかも金属イオンを含有する安定剤や可塑剤を
含有しているため、塩素イオン、金属イオン、可塑剤な
どが移行して半導体ウエハの表面を汚染する原因となる
ことがあった。
[0006] In order to solve this problem, a material in which soft polyvinyl chloride (PVC) is used as a central layer of a base film has already been put into practical use. Due to the contained stabilizer and plasticizer, chloride ions, metal ions, plasticizer, and the like may migrate and cause contamination of the surface of the semiconductor wafer.

【0007】そこで、特開平2−215528号に開示
されるように、ゴム状弾性を有する熱可塑性樹脂例え
ば、ポリブテン−1、ポリウレタン、ポリエステルエラ
ストマー、1,2−ポリブタジエン、スチレン−イソプ
レン−スチレン共重合体の水添物、スチレン−エチレン
−ブテン−スチレン共重合体(SEBS)を中心層とす
る積層フィルムを基材フィルムとする粘着テープが提案
された。しかし、これらの粘着テープは、延伸時に部分
的に層間剥離が起こったり、素子小片のピックアップの
際、素子小片が粘着テープから剥がれ難くなり、ピック
アップミスを起こすことがあり、特性としては、まだ不
十分であった。
Therefore, as disclosed in JP-A-2-215528, a thermoplastic resin having rubbery elasticity, for example, polybutene-1, polyurethane, polyester elastomer, 1,2-polybutadiene, styrene-isoprene-styrene copolymer. A pressure-sensitive adhesive tape has been proposed in which a laminated film having a central layer of a hydrogenated product of a union, styrene-ethylene-butene-styrene copolymer (SEBS) is used as a base film. However, these pressure-sensitive adhesive tapes may partially delaminate during stretching or may be difficult to peel off the element pieces from the pressure-sensitive adhesive tape when picking up the element pieces, which may cause a pick-up error. Was enough.

【0008】[0008]

【発明が解決しようとする課題】本発明は、上記の問題
点を解決した半導体ウエハ固定用粘着テープを提供する
ことを目的とする。すなわち、本発明は延伸時の部分的
な層間剥離が防止され、素子小片を粘着テープから剥が
しやすくし、そのピックアップミスが極めて少ない半導
体ウエハ固定用粘着テープを提供するものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer which has solved the above-mentioned problems. That is, the present invention provides an adhesive tape for fixing a semiconductor wafer, in which partial delamination during stretching is prevented, element pieces are easily peeled off from the adhesive tape, and pick-up errors are extremely reduced.

【0009】[0009]

【課題を解決するための手段】本発明者らは、上記の目
的を達成するため鋭意研究を重ねた結果、基材フィルム
の中心層としてスチレン−エチレン−ブテン(ペンテ
ン)系共重合体に対し、全体に対し、5wt%以上20wt
%以下の量のカルボン酸基含有単量体成分の重合体を混
合した樹脂フィルムを有するものが延伸時、層間剥離が
なく、素子間隙の大幅かつ、均一な拡大を可能とし、素
子小片を粘着テープから剥がしやすく、ピックアップミ
スが極めて少ないことを見い出し、この知見に基づき本
発明をなすに至った。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, a styrene-ethylene-butene (pentene) copolymer has been used as a central layer of a base film. , 5 wt% or more and 20 wt%
% Of the polymer film containing a polymer of a carboxylic acid group-containing monomer component in an amount of not more than 10%, when stretched, there is no delamination, enabling a large and uniform expansion of the element gap and sticking of the element pieces. The inventors have found that it is easy to peel off from the tape and that there are very few pickup errors, and based on this finding, the present invention has been made.

【0010】すなわち本発明は、基材フィルムの片側に
放射線硬化性粘着剤層を設けてなる半導体ウエハ固定用
粘着テープにおいて、前記基材フィルムが、構成層とし
て、スチレン−エチレン−ブテンもしくはペンテン系共
重合体に対し、カルボン酸基を含有する単量体成分を重
合させて得られた重合体を全体の5wt%以上20wt%以
下の量混合してなる組成物のフィルム層を有し、この層
に対し、接着層を介してまたは直接、放射線硬化性粘着
層側に粘着剤塗布層を、他方側に転写防止層を積層した
積層フィルムであることを特徴とする半導体ウエハ固定
用粘着テープを提供するものである。なお、ここで放射
線とは、紫外線のような光線、または電子線などの電離
性放射線を言う。
That is, the present invention relates to a pressure-sensitive adhesive tape for fixing a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer provided on one side of a substrate film, wherein the substrate film has a styrene-ethylene-butene or pentene-based material as a constituent layer. A film layer of a composition obtained by mixing a polymer obtained by polymerizing a monomer component containing a carboxylic acid group with the copolymer in an amount of 5% by weight or more and 20% by weight or less is provided. An adhesive tape for fixing a semiconductor wafer, which is a laminated film in which an adhesive coating layer is laminated on the radiation-curable adhesive layer side and a transfer prevention layer on the other side, via an adhesive layer or directly to the layer. To provide. Here, the term “radiation” refers to light such as ultraviolet light or ionizing radiation such as an electron beam.

【0011】本発明におけるスチレン−エチレン−ブテ
ンもしくはペンテン系共重合体としては、スチレン−エ
チレン−ブテン(もしくはペンテン)−スチレンブロッ
ク共重合体をあげることができ、上記共重合体に必要に
応じてカルボキシル基などの官能基を含むマレイン酸な
どの低分子化合物を付加しまたは置換して変性した変性
体、上記共重合体とポリオレフィンなどの汎用樹脂との
混合物等従来公知のもの、あるいはこれらの混合物等が
用いられ、基材フィルムの要求特性、コスト、加工性な
どの諸事情に応じて樹脂の種類、混合比率を任意に選択
することができる。
The styrene-ethylene-butene or pentene copolymer in the present invention includes a styrene-ethylene-butene (or pentene) -styrene block copolymer. Modified products obtained by adding or substituting a low molecular compound such as maleic acid containing a functional group such as a carboxyl group, or modified products, conventionally known products such as a mixture of the copolymer and a general-purpose resin such as polyolefin, or a mixture thereof. And the like, and the type and mixing ratio of the resin can be arbitrarily selected according to various conditions such as required characteristics of the base film, cost, and processability.

【0012】なお、上記ブロック共重合体において、ス
チレン重合体ブロックは平均分子量が2000〜100000程度
のものが好ましく、そのガラス転移温度は20℃以上の
ものが好ましい。また、エチレン−ブテン(ペンテン)
重合体ブロックは平均分子量が10000 〜400000程度のも
のが好ましく、そのガラス転移温度は−20℃以下のも
のが好ましい。また上記ブロック共重合体においてスチ
レン以外の重合体ブロックがエチレン−ブテン(ペンテ
ン)共重合体であるために、耐熱性に優れている。
In the above block copolymer, the styrene polymer block preferably has an average molecular weight of about 2000 to 100,000, and its glass transition temperature is preferably 20 ° C. or higher. Also, ethylene-butene (pentene)
The polymer block preferably has an average molecular weight of about 10,000 to 400,000 and a glass transition temperature of -20 ° C or lower. Further, since the polymer blocks other than styrene in the block copolymer are ethylene-butene (pentene) copolymers, they are excellent in heat resistance.

【0013】このスチレン−エチレン−ブテンもしくは
ペンテン系共重合体において、スチレン成分Aとエチレ
ン−ブテン(ペンテン)成分Bとの好ましい重量比はA
/B=5/95〜50/50、さらに好ましくはA/B
=10/90〜30/70である。
In this styrene-ethylene-butene or pentene copolymer, the preferred weight ratio of the styrene component A to the ethylene-butene (pentene) component B is A
/ B = 5/95 to 50/50, more preferably A / B
= 10/90-30/70.

【0014】本発明のスチレン−エチレン−ブテン(ペ
ンテン)系共重合体と混合されるカルボン酸基を有する
単量体成分から構成される重合体は、スチレン−エチレ
ン−ブテン(ペンテン)系共重合体と相溶性のある樹脂
であること以外は特に条件はないが、放射線透過性で柔
軟性を有するものが好ましく用いられる。ここでカルボ
ン酸基としては、遊離又は塩の形のカルボキシル基、カ
ルボン酸エステル基などを意味する。
The polymer composed of a monomer component having a carboxylic acid group mixed with the styrene-ethylene-butene (pentene) copolymer of the present invention is a styrene-ethylene-butene (pentene) copolymer. There is no particular condition except that the resin is compatible with the coalescence, but a resin having radiation transparency and flexibility is preferably used. Here, the carboxylic acid group means a free or salt form of a carboxyl group, a carboxylic acid ester group and the like.

【0015】このような重合体としては例えば、エチレ
ン−酢酸ビニル共重合体、エチレン−アクリル酸エチル
共重合体、エチレン−アクリル酸メチル共重合体、エチ
レン−アクリル酸共重合体、エチレン−メタアクリル酸
メチル共重合体、エチレン−メタアクリル酸エチル共重
合体、アイオノマー、などの単独重合体、共重合体等従
来公知のもの、あるいはこれらの混合物、または他の樹
脂及びエラストマーとの混合物等が挙げられ基材フィル
ムの要求特性、コスト、加工性などの諸事情に応じて樹
脂の種類、5wt%以上20wt%以下でのブレンド比率を
任意に選択することができる。
Examples of such a polymer include ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ethylene-methacrylic Acid methyl copolymer, ethylene-ethyl methacrylate copolymer, homopolymers such as ionomers, conventionally known copolymers and the like, or a mixture thereof, or a mixture with other resins and elastomers and the like. The type of the resin and the blend ratio of 5 wt% or more and 20 wt% or less can be arbitrarily selected according to various conditions such as required characteristics of the base film, cost, and processability.

【0016】上記共重合体は、グラフト共重合体等いか
なる共重合体を含み、上記混合物はアロイ、IPN等い
かなる混合形態を含む。
The above-mentioned copolymer includes any copolymer such as a graft copolymer, and the above-mentioned mixture includes any mixed form such as an alloy and IPN.

【0017】また、前記重合体構成成分中にカルボン酸
基を含有する重合体のブレンド比を5wt%以上20wt%
以下とする。これは5wt%未満では層間剥離の改善がで
きず、ピックアップ性を改良するだけの効果が得られ
ず、20wt%を越えると、基材フィルムのゴム状弾性が
損なわれて、粘着テープ延伸時に、画像認識をともなう
ピックアップ装置にて必要とされる素子小片の大幅で均
一な間隙量をとることができなくなるからである。
Further, the blend ratio of the polymer containing a carboxylic acid group in the polymer component is 5 wt% to 20 wt%.
The following is assumed. If the amount is less than 5% by weight, the delamination cannot be improved, and the effect of improving the pick-up property cannot be obtained. If the amount exceeds 20% by weight, the rubber-like elasticity of the base film is impaired. This is because it becomes impossible to obtain a large and uniform gap amount of the element pieces required in the pickup device with image recognition.

【0018】本発明の樹脂を調製するために混合手段と
しては、加熱ロール、バンバリーミキサー等が一般に採
用される。以上のような混合手段を用いると混合が容易
であるとともに確実であるので得られた基材フィルムは
折り曲げても白化現象はないという効果も有している。
As a mixing means for preparing the resin of the present invention, a heating roll, a Banbury mixer and the like are generally employed. The use of the mixing means as described above makes mixing easy and reliable, so that the obtained base film also has the effect that there is no whitening phenomenon even when bent.

【0019】また本発明のスチレン−エチレン−ブテン
(ペンテン)−スチレン系共重合体と重合体の構成成分
中にカルボン酸基を含有する重合体からなるブレンドフ
ィルムに他の樹脂からなるフィルムを積層した複層フィ
ルムを基材フィルムの中心層に用いることができる。
Further, a film made of another resin is laminated on a blend film made of the styrene-ethylene-butene (pentene) -styrene copolymer of the present invention and a polymer containing a carboxylic acid group in the constituent components of the polymer. The obtained multilayer film can be used as the center layer of the base film.

【0020】ブレンドフィルムに積層するフィルム用の
樹脂はとくに制限されるものではないが、放射線透過性
で柔軟性を有する方が好ましく基材フィルムの要求特
性、コスト、加工性などの諸事情に応じて樹脂の種類、
スチレン−エチレン−ブテン(ペンテン)系共重合体フ
ィルム以下の厚み比率、放射線硬貨性粘着層側のフィル
ムを任意に選択することができる。
The resin for the film to be laminated on the blend film is not particularly limited, but it is preferable that the resin has radiation transparency and flexibility, depending on various conditions such as the required characteristics of the base film, cost and processability. Type of resin,
The thickness ratio of the styrene-ethylene-butene (pentene) -based copolymer film or less, and the film on the radiation coin adhesive layer side can be arbitrarily selected.

【0021】この複層フィルムの製法としては、従来公
知の共押出法、ラミネート法などが用いられ、この際通
常のラミネートフィルムの製造で通常行われているよう
に、複層フィルム間に接着剤を塗布してもよい。このよ
うな接着剤としては、エチレン−酢酸ビニル共重合体ま
たはこれをマレイン酸変性したもの等、従来公知の接着
剤を使用することができる。
As a method for producing the multilayer film, a conventionally known co-extrusion method, lamination method, or the like is used. At this time, as is usually performed in the production of a normal laminated film, an adhesive between the multilayer films is used. May be applied. As such an adhesive, a conventionally known adhesive such as an ethylene-vinyl acetate copolymer or a maleic acid-modified ethylene-vinyl acetate copolymer can be used.

【0022】本発明に用いられる放射線硬化性粘着剤を
塗布する側の粘着剤塗布層用の樹脂としては、放射線透
過性で、Siウエハを汚染し難く、放射線硬化性粘着剤
との粘着力が大きいもの、例えばエチレン系のものが好
ましく、低密度ポリエチレン、直鎖低密度ポリエチレ
ン、エチレン−酢酸ビニル共重合体、エチレン−メタア
クリル酸メチル共重合体、エチレン−メタアクリル酸エ
チル共重合体、エチレン−メタアクリル酸共重合体、エ
チレン−アクリル酸共重合体等、従来公知のもの、ある
いはこれらの混合物等が挙げられ、用いられる放射線硬
化性粘着剤との接着性によって任意に選択することがで
きる。この粘着剤塗布層は、粘着剤と基材フィルムとの
接着力を大きくすることにより粘着テープ延伸時の粘着
剤の剥離による半導体ウエハの汚染を防止するためのも
のである。
The resin for the pressure-sensitive adhesive coating layer on the side to be coated with the radiation-curable pressure-sensitive adhesive used in the present invention is radiation-transparent, hardly contaminates the Si wafer, and has an adhesive force with the radiation-curable pressure-sensitive adhesive. Larger ones, for example, ethylene-based ones are preferable, and low-density polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methyl methacrylate copolymer, ethylene-ethyl methacrylate copolymer, ethylene -Methacrylic acid copolymer, ethylene-acrylic acid copolymer, etc., conventionally known ones, and mixtures thereof, and the like, which can be arbitrarily selected depending on the adhesiveness to the radiation-curable pressure-sensitive adhesive used. . The pressure-sensitive adhesive applied layer is for preventing the contamination of the semiconductor wafer due to the peeling of the pressure-sensitive adhesive at the time of stretching the pressure-sensitive adhesive tape by increasing the adhesive force between the pressure-sensitive adhesive and the base film.

【0023】本発明に用いられる転写防止層用の樹脂と
しては、例えばエチレン系のものが好ましく、低密度ポ
リエチレン、直鎖低密度ポリエチレン、エチレン−酢酸
ビニル共重合体、エチレン−メタアクリル酸メチル共重
合体、エチレン−メタアクリル酸エチル共重合体、エチ
レン−メタアクリル酸共重合体、エチレン−アクリル酸
共重合体等、従来公知のもの、あるいはこれらの混合物
等が挙げられる。この転写防止層は、粘着テープの伸び
特性を妨げず、基材フィルムのブロッキングを防止する
ためのものである。
As the resin for the anti-transfer layer used in the present invention, for example, an ethylene-based resin is preferable, and low-density polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methyl methacrylate copolymer is preferable. A conventionally known polymer such as a polymer, an ethylene-ethyl methacrylate copolymer, an ethylene-methacrylic acid copolymer, an ethylene-acrylic acid copolymer, or a mixture thereof may be used. This anti-transfer layer does not hinder the elongation characteristics of the pressure-sensitive adhesive tape and is intended to prevent blocking of the base film.

【0024】なお、粘着テープ延伸時の粘着テープと治
具との摩擦を減少し、基材フィルムのネッキングを防止
するために転写防止層として低密度ポリエチレン、エチ
レン−酢酸ビニル共重合体、さらにエチレン−酢酸ビニ
ル共重合体は酢酸ビニル含量が5%以下のエチレン−酢
酸ビニル共重合体を用いることが好ましい。
In order to reduce friction between the adhesive tape and the jig during stretching of the adhesive tape and prevent necking of the base film, a low-density polyethylene, an ethylene-vinyl acetate copolymer, and It is preferable to use an ethylene-vinyl acetate copolymer having a vinyl acetate content of 5% or less as the vinyl acetate copolymer.

【0025】中心層と粘着剤塗布層又は転写防止層とを
接着するための接着剤としては、エチレン−酢酸ビニル
共重合体、これをマレイン酸変性したもの、マレイン酸
変性エチレン−α−オレフィン共重合体、共重合ポリエ
ステル系樹脂等従来公知の接着性化合物、又はこれらの
混合物等を用いることができる。
As an adhesive for bonding the center layer and the pressure-sensitive adhesive coating layer or the transfer prevention layer, an ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-vinyl acetate copolymer, or a maleic acid-modified ethylene-α-olefin copolymer may be used. A conventionally known adhesive compound such as a polymer and a copolymerized polyester resin, or a mixture thereof can be used.

【0026】なお、接着剤として用いるエチレン−酢酸
ビニル共重合体、これをマレイン酸変性体は酢酸ビニル
含量が20%以上のものが接着力が大きく層間剥離を起
こし難いので好ましい。この積層フィルムの製造は共押
出法、ラミネート法など公知の方法が用いられる。
The ethylene-vinyl acetate copolymer used as an adhesive, which is modified with maleic acid, having a vinyl acetate content of 20% or more is preferred because it has a large adhesive strength and hardly causes delamination. Known methods such as a coextrusion method and a lamination method are used for the production of the laminated film.

【0027】基材フィルムの厚みは、強伸度特性、放射
線透過性の観点から通常30〜300μmが適当であ
る。基材フィルムの中心層の厚さ比率は、基材フィルム
の要求特性に応じて任意に設定されるが、通常積層フィ
ルムの総厚に対して30%以上が好ましく、50〜90
%がより好ましい。また、粘着剤塗布層あるいは転写防
止層の一方のみを設けるより、両方とも設けた方が、基
材フィルムの構造が対称系となるので、基材フィルムの
端がどちらか一方にカールすることがなく、操作上好ま
しいという利点がある。
The thickness of the substrate film is usually preferably from 30 to 300 μm from the viewpoints of strong elongation characteristics and radiation transparency. The thickness ratio of the center layer of the base film is arbitrarily set according to the required characteristics of the base film, but is usually preferably 30% or more with respect to the total thickness of the laminated film.
% Is more preferred. In addition, since the structure of the base film is more symmetrical when both are provided than when only one of the pressure-sensitive adhesive coating layer and the transfer prevention layer is provided, the end of the base film may curl to one side or the other. Therefore, there is an advantage that it is preferable in operation.

【0028】なお、基材フィルムの放射線硬化性粘着剤
を塗布する側の他方側をシボ加工もしくは滑剤コーティ
ングするとブロッキングの防止、粘着テープ延伸時の粘
着テープと治具との摩擦を減少する事による基材フィル
ムのネッキングの防止となるので好ましい。
When the other side of the base film to which the radiation-curable pressure-sensitive adhesive is applied is textured or coated with a lubricant, blocking is prevented, and friction between the pressure-sensitive adhesive tape and the jig when the pressure-sensitive adhesive tape is stretched is reduced. This is preferable because necking of the base film is prevented.

【0029】なお、スチレン−エチレン−ブテン(ペン
テン)系共重合体に5wt%以上20wt%未満の量で構成
成分中にカルボン酸基を含有する重合体をブレンドした
組成物からなるブレンドフィルムを単層で用いた場合、
粘着剤の剥離による半導体ウエハの汚染を防止できる
が、以上で述べた粘着剤塗布層、転写防止層の利点が損
なわれるので好ましくない。
A blend film composed of a styrene-ethylene-butene (pentene) copolymer and a polymer containing a carboxylic acid group in a component in an amount of 5% by weight or more and less than 20% by weight is simply used. When used in layers,
Although contamination of the semiconductor wafer due to peeling of the pressure-sensitive adhesive can be prevented, the advantages of the pressure-sensitive adhesive applied layer and the transfer prevention layer described above are unfavorably deteriorated.

【0030】放射線硬化性粘着剤としては、従来公知の
粘着剤が用いられるがアクリル系粘着剤100重量部に
対し炭素−炭素二重結合を有するシアヌレート化合物及
びイソシアヌレート化合物の群から選ばれた少なくとも
一種の化合物10〜200重量部と炭素−炭素二重結合
を二個有する直鎖状のポリエステルまたはポリオール系
ウレタンアクリレート化合物5〜100重量部とを含有
する粘着剤を用いると放射線照射後の粘着層のゴム状弾
性を維持することができ放射線照射後の粘着テープにお
いて、ゴム状弾性(柔軟性)を維持する効果が特に大き
い。
As the radiation-curable pressure-sensitive adhesive, a conventionally known pressure-sensitive adhesive is used. At least one selected from the group consisting of a cyanurate compound and an isocyanurate compound having a carbon-carbon double bond per 100 parts by weight of an acrylic pressure-sensitive adhesive is used. When an adhesive containing 10 to 200 parts by weight of a compound and 5 to 100 parts by weight of a linear polyester or polyol urethane acrylate compound having two carbon-carbon double bonds is used, an adhesive layer after irradiation Can maintain the rubber-like elasticity (flexibility) of the pressure-sensitive adhesive tape after radiation irradiation.

【0031】なお、本発明の半導体ウエハ固定用粘着テ
ープを紫外線照射によって硬化させる場合には、光重合
開始剤、例えばイソプロピルベンゾインエーテル、イソ
ブチルベンゾインエーテル、ベンゾフェノン、ミヒラー
ズケトン、クロロチオキサントン、ドデシルチオキサン
トン、ジメチルチオキサントン、ジエチルチオキサント
ン、ベンジルジメチルケタール、α−ヒドロキシシクロ
ヘキシルフェニルケトン、2−ヒドロキシメチルフェニ
ルプロパン等を粘着剤層に添加すると硬化反応時間また
は紫外線照射量が少なくても効率よく硬化反応を進行さ
せ、素子固定粘着力を低下させることができる。さらに
必要に応じて放射線照射後の素子固定粘着力を良好に低
下させるため放射線硬化性のシリコンアクリレート又は
シリコンメタアクリレートあるいは被着体である半導体
ウエハの表面に金属物質のコーティングされている特殊
処理面に対しても同様に素子固定粘着力を低下させるた
め、イオン封鎖剤等を、またタッキファイアー、粘着調
整剤、界面活性剤など、あるいはその他の改質剤及び慣
用成分を配合することができる。この放射線硬化性粘着
剤層の厚さは通常2〜50μmとする。
When the pressure-sensitive adhesive tape for fixing a semiconductor wafer of the present invention is cured by ultraviolet irradiation, a photopolymerization initiator such as isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone is used. , Diethylthioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, etc. added to the pressure-sensitive adhesive layer allows the curing reaction to proceed efficiently even if the curing reaction time or the amount of ultraviolet irradiation is small, and the element is fixed. Adhesive strength can be reduced. In addition, if necessary, a radiation-curable silicon acrylate or silicon methacrylate, or a specially treated surface coated with a metal material on the surface of the semiconductor wafer to be adhered, in order to reduce the adhesive strength of the device after radiation irradiation properly. Similarly, in order to lower the adhesive strength for fixing the element, an ion sequestering agent or the like, a tackifier, an adhesion regulator, a surfactant, or the like, or other modifiers and common components can be blended. The thickness of the radiation-curable pressure-sensitive adhesive layer is usually 2 to 50 μm.

【0032】[0032]

【実施例】次に本発明を実施例に基づきさらに詳細に説
明する。なお、以下の実施例で各特性は次のように試験
し、評価した。
Next, the present invention will be described in more detail with reference to examples. In the following examples, each characteristic was tested and evaluated as follows.

【0033】1)粘着力(g/25mm) 素子固定粘着力の照射前の大きさと照射後の低下の程度
を調べた。作成した放射線硬化性粘着テープに直径5イ
ンチの大きさのSiウエハを被着体とし、JIS−Z0
237に基づき紫外線照射前後の粘着力を測定した(9
0°剥離、剥離速度50mm/min)。この際、粘着テープ
に貼合するウエハの表面状態は、鏡面状態とした。
1) Adhesive Force (g / 25 mm) The magnitude of the element-fixed adhesive force before irradiation and the degree of decrease after irradiation were examined. A 5-inch diameter Si wafer was used as an adherend on the radiation-curable pressure-sensitive adhesive tape thus prepared, and JIS-Z0
The adhesive force before and after ultraviolet irradiation was measured based on 237 (9).
0 ° peeling, peeling speed 50 mm / min). At this time, the surface state of the wafer bonded to the adhesive tape was a mirror surface state.

【0034】2)素子間隙(μm) 粘着テープ延伸時の素子間隙の大きさと縦方向/横方向
の均一性の程度を調べた。作成した放射線硬化性粘着テ
ープに固定した直径5インチのSiウエハをダイシンン
グソーで3×3mmの大きさにフルカットし、紫外線硬
化後、ウエハ拡張装置(エアー圧2.0kg/cm )にてエ
キスパンドストロークを10mm上昇させて延伸した際
の縦方向、横方向の素子間隙量を測定し、素子間隙の大
きさ、均一性をみた。ここで素子間隙量は、ダイシング
時のブレード厚さ40μmを含む。
2) Element gap (μm) The size of the element gap and the degree of uniformity in the vertical and horizontal directions when the adhesive tape was stretched were examined. A 5-inch diameter Si wafer fixed to the prepared radiation-curable adhesive tape is fully cut into a size of 3 × 3 mm with a dicing saw, cured with ultraviolet light, and then expanded with a wafer expansion device (air pressure: 2.0 kg / cm 2). The amount of device gap in the vertical and horizontal directions when the expand stroke was increased by 10 mm was measured to determine the size and uniformity of the device gap. Here, the element gap amount includes a blade thickness of 40 μm at the time of dicing.

【0035】3)層間剥離 粘着テープ延伸時の基材フィルム各層の層間の剥離の程
度を調べた。素子間隙を測定した時と同様にウエハ拡張
装置にて延伸した際の粘着テープの層間の剥離状態を評
価した。 4)ピックアップミス率 素子小片のピックアップの際のピックアップミスの確率
を調べた。
3) Delamination The degree of delamination between the layers of the base film when the adhesive tape was stretched was examined. The peeling state between the layers of the pressure-sensitive adhesive tape when stretched by the wafer expansion device was evaluated in the same manner as when the element gap was measured. 4) Pick-up error rate The probability of pick-up error when picking up element pieces was examined.

【0036】実施例1〜7及び比較例1〜3 表1及び表2に示したような各層構成の基材フィルムを
押出機を使用して下記樹脂単体またはニーダー練りブレ
ンド組成物などを用いて(共)押出加工により作成し
た。得られた基材フィルム(粘着剤塗布層、中心層、転
写防止層からなる)の厚みはすべて100μである。得
られた基材フィルムの粘着剤塗布側にコロナ処理をし
て、乾燥後の粘着後の粘着剤層の厚さが10μmとなる
ように粘着剤を塗布し、放射線硬化性粘着テープを作成
した。
Examples 1 to 7 and Comparative Examples 1 to 3 Using the extruder, a base film having each layer structure as shown in Tables 1 and 2 was prepared by using the following resin alone or kneaded blend composition. It was prepared by (co) extrusion processing. The thickness of each of the obtained base films (consisting of the pressure-sensitive adhesive applied layer, the center layer, and the transfer prevention layer) is 100 μm. The obtained substrate film was subjected to a corona treatment on the pressure-sensitive adhesive application side, and a pressure-sensitive adhesive was applied so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, to prepare a radiation-curable pressure-sensitive adhesive tape. .

【0037】用いた樹脂及び粘着剤は次の通りである。 樹脂A(スチレン−エチレン−ブテン共重合体):シェ
ル化学製 KRATON G−165X 樹脂B(マレイン酸変性スチレン−エチレン−ブテン共
重合体):旭化成工業製 タフテック M1943 樹脂C(スチレン−エチレン−ペンテン共重合体):ク
ラレ製 セプトン 2043 EAA(エチレン−アクリル酸共重合体(アクリル酸含
有量9%)):ダウケミカル製 PRIMAKOL 1
410 EPR(エチレン−プロピレン−ジエン共重合体):日
本合成ゴム製 EP 51EEA(エチレン−アクリル酸エチル共重合体) :日本
石油化学製 日石レクストロンEEA A3100 EVA−10(エチレン−酢酸ビニル共重合体(酢酸ビ
ニル含量10%)):住友化学工業製 エバテート H
2021F EVA−3(エチレン−酢酸ビニル共重合体(酢酸ビニ
ル含量3%)):三菱油化製 ユカロン−エバ V11
3K LLDPE(直鎖低密度ポリエチレン):東ソー製 ペ
トロセン 205 粘着剤A:アクリル系粘着剤 100重量部 イソシアヌレート化合物 80重量部 ウレタンアクリレート化合物 20重量部 光重合開始剤 1重量部 イソシアヌレート化合物 80重量部
The resins and adhesives used are as follows. Resin A (styrene - ethylene - butene copolymer): Shell Chemical Co. KRATON G-165 0 X resin B (maleic acid-modified styrene - ethylene - butene copolymer): manufactured by Asahi Kasei Tuftec M1943 resin C (styrene - ethylene - Penten copolymer): Septon 2043 EAA manufactured by Kuraray (ethylene-acrylic acid copolymer (acrylic acid content 9%)): PRIMAKOL 1 manufactured by Dow Chemical
410 EPR (ethylene-propylene-diene copolymer): manufactured by Nippon Synthetic Rubber EP 51 EEA (ethylene-ethyl acrylate copolymer) : Japan
Petrochemical Nisseki Lextron EEA A3100 EVA-10 (ethylene-vinyl acetate copolymer (vinyl acetate content 10%)): Evatate H manufactured by Sumitomo Chemical Co., Ltd.
2021F EVA-3 (ethylene-vinyl acetate copolymer (vinyl acetate content 3%)): Yucalon-Eva V11 manufactured by Mitsubishi Yuka
3K LLDPE (linear low-density polyethylene): Tosoh Petrocene 205 Adhesive A: Acrylic adhesive 100 parts by weight Isocyanurate compound 80 parts by weight Urethane acrylate compound 20 parts by weight Photopolymerization initiator 1 part by weight Isocyanurate compound 80 parts by weight

【0038】[0038]

【表1】 [Table 1]

【0039】[0039]

【表2】 [Table 2]

【0040】[0040]

【発明の効果】本発明の半導体固定用粘着テープを半導
体ウエハ等の切断加工に用いた場合、放射線照射後でも
粘着テープが柔軟性を維持し延伸性が優れているため粘
着テープによる素子間隙の大幅で均一な拡大が可能とな
るので、素子小片の画像認識が容易となる。また、粘着
テープ延伸時に層間剥離が起き難いので、ピックアップ
時に素子小片が粘着剤塗布層から剥がれ易い。よって、
素子を容易にしかも損傷することなくピックアップする
ことができるという優れた効果を奏する。
When the adhesive tape for fixing a semiconductor of the present invention is used for cutting a semiconductor wafer or the like, the adhesive tape maintains flexibility and has excellent stretchability even after irradiation with radiation, so that the gap between the elements by the adhesive tape can be reduced. Since large and uniform enlargement is possible, image recognition of element pieces becomes easy. In addition, since delamination hardly occurs when the adhesive tape is stretched, the element pieces are easily peeled off from the adhesive applied layer during pickup. Therefore,
There is an excellent effect that the element can be picked up easily and without damage.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 石渡 伸一 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (72)発明者 岩本 和繁 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (72)発明者 長谷部 守邦 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (58)調査した分野(Int.Cl.6,DB名) C09J 7/02 - 7/04 H01L 21/301 H01L 21/52 WPI/L(QUESTEL)──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinichi Ishiwatari 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (72) Inventor Kazushige Iwamoto 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (72) Inventor Morikuni Hasebe 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (58) Field surveyed (Int. Cl. 6 , DB name) C09J 7 / 02-7/04 H01L 21/301 H01L 21/52 WPI / L (QUESTEL)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基材フィルムの片側に放射線硬化性粘着
剤層を設けてなる半導体ウエハ固定用粘着テープにおい
て、前記基材フィルムが、構成層として、スチレン−エ
チレン−ブテンもしくはペンテン系共重合体に対し、カ
ルボン酸基を含有する単量体成分を重合させて得られた
重合体を全体の5wt%以上20wt%以下の量混合してな
る組成物のフィルム層を有し、この層に対し、接着層を
介してまたは直接、放射線硬化性粘着層側に粘着剤塗布
層を、他方側に転写防止層を積層した積層フィルムであ
ることを特徴とする半導体ウエハ固定用粘着テープ。
1. A pressure-sensitive adhesive tape for fixing a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer provided on one side of a substrate film, wherein the substrate film is a styrene-ethylene-butene or pentene copolymer as a constituent layer. A film layer of a composition obtained by mixing a polymer obtained by polymerizing a monomer component containing a carboxylic acid group in an amount of 5% by weight or more and 20% by weight or less, An adhesive tape for fixing a semiconductor wafer, wherein the adhesive tape is a laminated film in which an adhesive application layer is laminated on the radiation-curable adhesive layer side and an anti-transfer layer is laminated on the other side via an adhesive layer or directly.
JP3303814A 1991-10-24 1991-10-24 Adhesive tape for fixing semiconductor wafers Expired - Fee Related JP2983729B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3303814A JP2983729B2 (en) 1991-10-24 1991-10-24 Adhesive tape for fixing semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3303814A JP2983729B2 (en) 1991-10-24 1991-10-24 Adhesive tape for fixing semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH05117600A JPH05117600A (en) 1993-05-14
JP2983729B2 true JP2983729B2 (en) 1999-11-29

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ID=17925627

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Country Status (1)

Country Link
JP (1) JP2983729B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4087144B2 (en) * 2001-04-23 2008-05-21 古河電気工業株式会社 Laser dicing adhesive tape
JP4831602B2 (en) * 2005-10-04 2011-12-07 グンゼ株式会社 Base film for dicing sheet
JP4813863B2 (en) * 2005-10-04 2011-11-09 グンゼ株式会社 Base film for dicing sheet
JP6450080B2 (en) * 2014-03-31 2019-01-09 住化プラステック株式会社 Adhesive tape
WO2021112238A1 (en) * 2019-12-06 2021-06-10 リンテック株式会社 Manufacturing method for semiconductor device with electromagnetic shield film, and terminal protection tape

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