JP3012060B2 - Adhesive tape for fixing semiconductor wafers - Google Patents

Adhesive tape for fixing semiconductor wafers

Info

Publication number
JP3012060B2
JP3012060B2 JP32650091A JP32650091A JP3012060B2 JP 3012060 B2 JP3012060 B2 JP 3012060B2 JP 32650091 A JP32650091 A JP 32650091A JP 32650091 A JP32650091 A JP 32650091A JP 3012060 B2 JP3012060 B2 JP 3012060B2
Authority
JP
Japan
Prior art keywords
layer
adhesive tape
radiation
copolymer
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP32650091A
Other languages
Japanese (ja)
Other versions
JPH05148462A (en
Inventor
宏志 中山
憲司 望木
栄二 白松
伸一 石渡
和繁 岩本
守邦 長谷部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THE FURUKAW ELECTRIC CO., LTD.
Original Assignee
THE FURUKAW ELECTRIC CO., LTD.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by THE FURUKAW ELECTRIC CO., LTD. filed Critical THE FURUKAW ELECTRIC CO., LTD.
Priority to JP32650091A priority Critical patent/JP3012060B2/en
Publication of JPH05148462A publication Critical patent/JPH05148462A/en
Application granted granted Critical
Publication of JP3012060B2 publication Critical patent/JP3012060B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、各種半導体を製造する
工程において使用する粘着テープに関し、さらに詳しく
いえば、例えばパターンを形成したウエハを一つ一つの
パターン毎に切断し半導体素子として分割する際に使用
する半導体ウエハ固定用の放射線硬化性粘着テープに関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape used in a process for manufacturing various semiconductors. More specifically, for example, a wafer on which a pattern is formed is cut into individual patterns and divided into semiconductor elements. The present invention relates to a radiation-curable pressure-sensitive adhesive tape for fixing a semiconductor wafer used at the time.

【0002】[0002]

【従来の技術】従来、回路パターンの形成された半導体
ウエハを素子小片に切断分離するダイシング加工を行う
際は、放射線硬化性粘着テープを用いるピックアップ方
式が提案されている。
2. Description of the Related Art Conventionally, a pickup method using a radiation-curable pressure-sensitive adhesive tape has been proposed for performing a dicing process for cutting and separating a semiconductor wafer on which a circuit pattern is formed into element pieces.

【0003】これは放射線、例えば紫外線のような光、
または電子線のような電離性放射線を透過する基材フィ
ルムと、この基材フィルム上に塗工された放射線照射に
より硬化する性質を有する粘着剤層とからなる半導体ウ
エハ固定用粘着テープを用いる方法である。これは、よ
り詳しくはダイシング加工時の素子固定粘着力を強接着
力とし、半導体ウエハを素子小片に切断分離後、基材フ
ィルム側より放射線照射を行い放射線硬化型粘着剤層を
硬化させて、素子固定粘着力を大幅に低下させて素子小
片の大きさに関係なく、例えば25mm2 以上の大きな素
子であっても容易にピックアップすることができるよう
にした方式である。
This is radiation, for example light such as ultraviolet light,
Or a method using a pressure-sensitive adhesive tape for fixing a semiconductor wafer comprising a base film that transmits ionizing radiation such as an electron beam, and a pressure-sensitive adhesive layer coated on the base film and having a property of being cured by irradiation with radiation. It is. More specifically, the element fixing adhesive force at the time of dicing processing is made to be a strong adhesive force, and after cutting and separating the semiconductor wafer into element pieces, irradiation is performed from the base film side to cure the radiation-curable adhesive layer, This is a method in which the element fixing adhesive force is greatly reduced so that a large element of, for example, 25 mm 2 or more can be easily picked up regardless of the size of the element piece.

【0004】この方式は、放射線透過性の基材フィルム
上に放射線硬化性粘着剤を塗工した半導体ウエハ固定用
粘着テープの粘着剤層中に含まれる放射線硬化性化合物
を放射線照射によって硬化させ粘着剤に三次元網状化構
造を与えて、その流動性と粘着力を著しく低下させる原
理に基づくものである。
In this method, a radiation-curable compound contained in a pressure-sensitive adhesive layer of a pressure-sensitive adhesive tape for fixing a semiconductor wafer, in which a radiation-curable pressure-sensitive adhesive is coated on a radiation-transparent substrate film, is cured by irradiation with radiation to form an adhesive. It is based on the principle that a three-dimensional network structure is given to the agent to significantly reduce its fluidity and adhesive strength.

【0005】しかし、このような粘着テープでは放射線
硬化性化合物の硬化反応により粘着剤を硬化させて三次
元網状化構造を与え粘着力を低下させるため、ダイシン
グ加工時に有していた粘着テープのゴム状弾性がピック
アップ時には殆ど無くなってしまう結果となる。このた
め、従来行われていた粘着テープの放射状延伸による素
子間隙の拡大ができなくなる場合がある。
However, in such an adhesive tape, the adhesive is cured by a curing reaction of a radiation-curable compound to give a three-dimensional network structure and reduce the adhesive strength. As a result, the shape elasticity is almost lost during pickup. For this reason, it may not be possible to enlarge the element gap by the conventional radial stretching of the adhesive tape.

【0006】この問題を解決するため、すでに軟質ポリ
塩化ビニル(PVC)を基材フィルムの中心層とするも
のが実用化されているが、ポリ塩化ビニルは塩素系樹脂
であり、しかも金属化合物からなる安定剤や可塑剤を含
有しているため、塩素イオン、金属イオン、可塑剤など
が移行して半導体ウエハの表面を汚染する原因となるこ
とがあった。
[0006] In order to solve this problem, the use of flexible polyvinyl chloride (PVC) as the center layer of the base film has already been put into practical use. In some cases, chlorine ions, metal ions, plasticizers, etc. migrate to cause contamination of the surface of the semiconductor wafer due to the inclusion of such stabilizers and plasticizers.

【0007】そこで、特開平2−215528号に開示
されるように、ゴム状弾性を有する熱可塑性樹脂例え
ば、ポリブテン−1、ポリウレタン、ポリエステルエラ
ストマー、1,2−ポリブタジエン、スチレン−イソプ
レン−スチレン共重合体の水添物、またはスチレン−エ
チレン−ブテン−スチレン共重合体(SEBS)を中心
層とする積層フィルムを基材フィルムとする粘着テープ
が提案された。しかし、これらの粘着テープも、放射線
照射後の延伸においても画像認識をともなうピックアッ
プ装置にて必要とされる素子小片の大幅で均一な間隙量
をとるには、基材フィルム自体のネッキング(フィルム
延伸時、力の伝播性不良による部分的な伸びの発生)や
放射線照射による基材フィルムの劣化に伴うゴム状弾性
の喪失などを起こすことがあり特性上まだ不十分であっ
た。
Therefore, as disclosed in JP-A-2-215528, a thermoplastic resin having rubbery elasticity, for example, polybutene-1, polyurethane, polyester elastomer, 1,2-polybutadiene, styrene-isoprene-styrene copolymer. Adhesive tapes have been proposed in which a base film is a laminated film having a central layer of a combined hydrogenated product or styrene-ethylene-butene-styrene copolymer (SEBS). However, these adhesive tapes also require the necking of the base film itself (film stretching) in order to obtain a large and uniform gap amount of element pieces required in a pickup device with image recognition even after stretching after irradiation of radiation. In some cases, partial elongation occurs due to poor force transmission), and rubber-like elasticity is lost due to deterioration of the base film due to irradiation, and the properties are still insufficient.

【0008】なお、ポリアミドを基材フィルムとして用
いた場合は、基材フィルムがネッキングを起こすため、
粘着テープを延伸した時、素子小片の間隔が広がらない
という問題がある。また、絶対伸び率が小さいため、高
延伸すると破断する絶対伸び率が大きく高延伸可能な
ポリアミドもあるが、ネッキングの問題は解消されず
粘着テープ延伸時の素子小片の間隔を狭める傾向にある
のでふさわしくない。
When polyamide is used as the base film, the base film causes necking.
When the adhesive tape is stretched, there is a problem that the interval between the element pieces does not increase. In addition, since the absolute elongation is small, it breaks when stretched at a high rate . High absolute elongation and high elongation
There is also polyamide, but the problem of necking is not solved ,
It is not suitable because the interval between the element pieces when the adhesive tape is stretched tends to be narrowed.

【0009】[0009]

【発明が解決しようとする課題】本発明は、上記の問題
点を解決した半導体ウエハ固定用粘着テープを提供する
ことを目的とする。すなわち、本発明は放射線照射後の
粘着テープにおいて、粘着テープをネッキングもしくは
破断することなく延伸できるため、素子間隙の大幅な拡
大を行うことができる半導体ウエハ固定用粘着テープを
提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer which has solved the above-mentioned problems. That is, an object of the present invention is to provide a pressure-sensitive adhesive tape for fixing a semiconductor wafer, which can be stretched without necking or breaking the pressure-sensitive adhesive tape after irradiation, so that the element gap can be significantly increased. I do.

【0010】[0010]

【課題を解決するための手段】本発明者らは、上記の目
的を達成するため鋭意研究を重ねた結果、基材フィルム
の中心層としてポリアミド−ポリエーテル系共重合体フ
ィルム層を有するものが延伸時の素子間隙の大幅拡大を
可能にし、しかも破断することがないことを見い出し、
この知見に基づき本発明をなすに至った。
Means for Solving the Problems The present inventors have conducted intensive studies to achieve the above object, and as a result, a base film having a polyamide-polyether copolymer film layer as a central layer has been developed. It has been found that the gap between the elements at the time of stretching can be greatly increased, and that there is no breakage.
The present invention has been accomplished based on this finding.

【0011】すなわち本発明は、基材フィルムの片側に
放射線硬化性粘着剤層を設けてなる半導体ウエハ固定用
粘着テープにおいて、前記基材フィルムが、中心層にポ
リアミド−ポリエーテル系共重合体フィルム層を有し、
この層に対し接着層を介して、または直接、放射線硬化
性粘着剤層側に粘着剤塗布層を、他方側に転写防止層を
有する積層フィルムであることを特徴とする半導体ウエ
ハ固定用粘着テープを提供するものである。なお、ここ
で放射線とは、紫外線のような光線、又は電子線などの
電離性放射線を言う。
That is, the present invention provides an adhesive tape for fixing a semiconductor wafer having a radiation-curable adhesive layer provided on one side of a substrate film, wherein the substrate film has a polyamide-polyether copolymer film in a central layer. Having layers,
An adhesive tape for fixing a semiconductor wafer, which is a laminated film having an adhesive coating layer on the radiation-curable adhesive layer side and an anti-transfer layer on the other side via an adhesive layer or directly to this layer. Is provided. Here, the radiation refers to a light beam such as an ultraviolet ray or an ionizing radiation such as an electron beam.

【0012】本発明に用いられるポリアミド−ポリエー
テル系共重合体は、グラフト共重合体またはブロック共
重体のほか、ポリアミドとポリエーテルのアロイ、IP
N等の混合形態も含む。なお伸び率は150%以上が好
ましい。
The polyamide-polyether copolymer used in the present invention includes, in addition to a graft copolymer or a block copolymer, an alloy of polyamide and polyether,
It also includes mixed forms such as N. The elongation is preferably 150% or more.

【0013】本発明に用いられるポリアミドとは、ナイ
ロン6(ポリカプラミド)、ナイロン11(ポリウンデ
カンアミド)、ナイロン12(ポリドデカンアミド)で
代表されるラクタムあるいはω−アミノカルボン酸を主
成分とするホモポリアミドやコポリアミド、ナイロン
6,6(ポリヘキサメチレンアジポアミド)、ナイロン
6,10(ポリヘキサメチレンセバカミド)、ナイロン
6,12(ポリヘキサメチレンカプラミド)などで代表
されるジアミンとジカルボン酸を主成分とするホモポリ
アミドやコポリアミドなどである。また同時にアミドモ
ノマーとアミドモノマー以外のモノマーとの共重合体で
あるポリエーテルアミド、ポリエステルアミドなども含
まれる。
The polyamide used in the present invention is a lactam represented by nylon 6 (polycapramide), nylon 11 (polyundecanamide), nylon 12 (polydodecanamide) or a homopolymer mainly containing ω-aminocarboxylic acid. Diamines and dicarboxylic acids represented by polyamides, copolyamides, nylon 6,6 (polyhexamethylene adipamide), nylon 6,10 (polyhexamethylene sebacamide), nylon 6,12 ( polyhexamethylene capramide), etc. And homopolyamides and copolyamides containing as a main component. At the same time, polyether amides and polyester amides, which are copolymers of amide monomers and monomers other than amide monomers, are also included.

【0014】本発明に用いられるポリエーテルとは、ポ
リエチレングリコール、ポリプロピレングリコール、ポ
リブチレングリコール、ポリテトラメチレングリコール
等のジオール類の重合体をいう。
The polyether used in the present invention means a polymer of a diol such as polyethylene glycol, polypropylene glycol, polybutylene glycol and polytetramethylene glycol.

【0015】また、本発明のポリアミド−ポリエーテル
系共重合体の重合の際は、ポリアミド成分、ポリエーテ
ル成分の他にジカルボン酸、例えばドデカン二酸、テレ
フタル酸、イソフタル酸などを一種又はそれ以上添加し
てもよい。本発明で使用するポリアミド−ポリエーテル
系共重合体には通常の耐熱安定剤、滑剤等の添加剤を添
加することも可能である。
In the polymerization of the polyamide-polyether copolymer of the present invention, one or more dicarboxylic acids such as dodecane diacid, terephthalic acid, isophthalic acid, etc. may be used in addition to the polyamide component and the polyether component. It may be added. The polyamide-polyether copolymer used in the present invention may contain ordinary additives such as heat stabilizers and lubricants.

【0016】上記共重合体に必要に応じてカルボキシル
基などの官能基を含むマレイン酸などの低分子を付加ま
たは置換し、変性した変性体、上記共重合体とポリオレ
フィンなどの汎用樹脂との混合物等従来公知のもの、あ
るいはこれらの混合物等が用いられ基材フィルムの要求
特性、コストなどの諸事情に応じて樹脂の種類、混合比
率を任意に選択することができる。また本発明のポリア
ミド−ポリエーテル系共重合体に他の樹脂を混合した組
成物からなるブレンドフィルムを中心層として用いるこ
とができる。
Modified products obtained by adding or substituting low molecular compounds such as maleic acid containing a functional group such as a carboxyl group to the above copolymers as required, and modified products, and mixtures of the above copolymers with general-purpose resins such as polyolefins. Conventionally known ones, or a mixture thereof can be used, and the type and mixing ratio of the resin can be arbitrarily selected according to various conditions such as required characteristics of the base film and cost. Further, a blend film composed of a composition obtained by mixing another resin with the polyamide-polyether copolymer of the present invention can be used as the center layer.

【0017】本発明のポリアミド−ポリエーテル系共重
合体とのブレンドフィルム用の樹脂は、ポリアミド−ポ
リエーテル系共重合体と相溶性のある樹脂であること以
外はとくに制限されるものではないが放射線透過性で柔
軟性を有するほうが好ましい例えば、低密度ポリエチレ
ン、直鎖低密度ポリエチレン、ポリプロピレン、エチレ
ン−プロピレン共重合体、エチレン−酢酸ビニル共重合
体、ポリメチルペンテン、エチレン−アクリル酸エチル
共重合体、エチレン−アクリル酸メチル共重合体、エチ
レン−アクリル酸共重合体、エチレン−メタアクリル酸
メチル共重合体、エチレン−メタアクリル酸エチル共重
合体、アイオノマー、エチレン−プロピレン−ジエン共
重合体等の単独重合体、共重合体等従来公知のもの、あ
るいはこれらの混合物、または他の樹脂及びエラストマ
ーとの混合物等が挙げられ基材フィルムの要求性、コス
トなどの諸事情に応じて樹脂の種類、50wt%以下で
のブレンド比率を任意に選択することが出来る。なお、
粘着剤塗布層、転写防止層との接着性に優れた樹脂をブ
レンドすると粘着テープを延伸した時、層間剥離を起こ
し難いので好ましい。
The resin for a blend film with the polyamide-polyether copolymer of the present invention is not particularly limited except that it is a resin compatible with the polyamide-polyether copolymer. It is preferable to have flexibility in radiation transmission and low density polyethylene, linear low density polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer, polymethylpentene, ethylene-ethyl acrylate copolymer Copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ethylene-methyl methacrylate copolymer, ethylene-ethyl methacrylate copolymer, ionomer, ethylene-propylene-diene copolymer, etc. Known polymers such as homopolymers and copolymers of Objects, or other resin and requirements of the substrate film include mixtures of the elastomer, the type of resin in accordance with the circumstances such as cost, it is possible to arbitrarily select the blending ratio at 50 wt% or less. In addition,
It is preferable to blend a resin having excellent adhesiveness with the pressure-sensitive adhesive applied layer and the transfer prevention layer, since delamination hardly occurs when the pressure-sensitive adhesive tape is stretched.

【0018】本発明の樹脂を調製するために混合手段と
しては、加熱ロール、バンバリーミキサー等が一般に採
用される。以上のような混合手段を用いると混合が容易
であるとともに確実であるので得られた基材フィルムは
折り曲げても白化現象はないという効果も有している。
また、本発明のポリアミド−ポリエーテル系共重合体フ
ィルムと他の樹脂からなるフィルムとの複層フィルムを
中心層として用いることができる。
As a mixing means for preparing the resin of the present invention, a heating roll, a Banbury mixer and the like are generally employed. The use of the mixing means as described above makes mixing easy and reliable, so that the obtained base film also has the effect that there is no whitening phenomenon even when bent.
Further, a multilayer film of the polyamide-polyether copolymer film of the present invention and a film made of another resin can be used as the central layer.

【0019】本発明のポリアミド−ポリエーテル系共重
合体の単独フィルム、ブレンドフィルムに積層するフィ
ルム用の樹脂は特に制限されるものではないが放射線透
過性で柔軟性を有する方が好ましい。例えば、ポリアミ
ド−ポリエーテル系共重合体と相溶性のあるブレンドフ
ィルム用の樹脂、相溶し難いが要求を満たす樹脂等従来
公知のもの、あるいはこれらの混合物、さらにこれらの
積層フィルム、または他の樹脂及びエラストマーとの混
合物等が挙げられ基材フィルムの要求特性、加工性、コ
ストなどの諸事情に応じて樹脂の種類、ポリアミド−ポ
リエーテル系共重合体フィルム以下の厚み、放射線硬化
性粘着層側フィルムを任意に選択することができる。
The resin for the film to be laminated on the single film or the blend film of the polyamide-polyether copolymer of the present invention is not particularly limited, but it is preferable that the resin has radiation transparency and flexibility. For example, a resin for a blend film that is compatible with a polyamide-polyether-based copolymer, a resin that is hardly compatible but satisfies requirements, such as a conventionally known resin, or a mixture thereof, or a laminated film of these, or another Mixtures with resins and elastomers, etc. are listed, depending on the required properties of the base film, processability, cost and other circumstances, the type of resin, the thickness of the polyamide-polyether copolymer film or less, the radiation-curable adhesive layer The side film can be arbitrarily selected.

【0020】なお、ポリアミド−ポリエーテル系共重合
体、粘着性塗布層あるいは転写防止層との接着性の優れ
た樹脂を積層すると、粘着テープを延伸した時、層間剥
離を起こし難いので好ましい。
It is preferable to laminate a polyamide-polyether copolymer and a resin having excellent adhesiveness with the adhesive coating layer or the transfer prevention layer since delamination hardly occurs when the adhesive tape is stretched.

【0021】この複層フィルムの製法としては、従来公
知の共押出法、ラミネート法などが用いられ、この際通
常のラミネートフィルムの製造で通常行われているよう
に、複層フィルム間に接着剤を塗布してもよい。このよ
うな接着剤としては、エチレン−酢酸ビニル共重合体ま
たはこれをマレイン酸変性したもの等、従来公知の接着
剤を使用することができる。
As a method for producing the multilayer film, a conventionally known co-extrusion method, lamination method, or the like is used. At this time, as is usually performed in the production of a normal laminated film, an adhesive between the multilayer films is used. May be applied. As such an adhesive, a conventionally known adhesive such as an ethylene-vinyl acetate copolymer or a maleic acid-modified ethylene-vinyl acetate copolymer can be used.

【0022】本発明に用いられる放射線硬化性粘着剤を
塗布する側の粘着剤塗布層用の樹脂としては、放射線透
過性で、Siウエハを汚染し難く、放射線硬化性粘着剤
との粘着力が大きいもの、例えばエチレン系のものが好
ましく、低密度ポリエチレン、直鎖低密度ポリエチレ
ン、エチレン−酢酸ビニル共重合体、エチレン−メタア
クリル酸メチル共重合体、エチレン−メタアクリル酸エ
チル共重合体、エチレン−メタアクリル酸共重合体、エ
チレン−アクリル酸共重合体等、従来公知のもの、ある
いはこれらの混合物等が挙げられ、用いられる放射線硬
化性粘着剤との接着性によって任意に選択することがで
きる。この粘着剤塗布層は、粘着剤と基材フィルムとの
接着を強固にするための役割を果し、ウエハ加工後の粘
着テープ延伸時に粘着剤の基材フィルムからの剥離によ
る半導体ウエハの汚染防止に寄与する。
The resin for the pressure-sensitive adhesive coating layer on the side to be coated with the radiation-curable pressure-sensitive adhesive used in the present invention is radiation-transparent, hardly contaminates the Si wafer, and has an adhesive force with the radiation-curable pressure-sensitive adhesive. Larger ones, for example, ethylene-based ones are preferable, and low-density polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methyl methacrylate copolymer, ethylene-ethyl methacrylate copolymer, ethylene -Methacrylic acid copolymer, ethylene-acrylic acid copolymer, etc., conventionally known ones, and mixtures thereof, and the like, which can be arbitrarily selected depending on the adhesiveness to the radiation-curable pressure-sensitive adhesive used. . This pressure-sensitive adhesive coating layer serves to strengthen the adhesion between the pressure-sensitive adhesive and the substrate film, and prevents contamination of the semiconductor wafer due to peeling of the pressure-sensitive adhesive from the substrate film when the pressure-sensitive adhesive tape is stretched after wafer processing. To contribute.

【0023】本発明に用いられる転写防止層用の樹脂と
しては、例えばエチレン系のものが好ましく、低密度ポ
リエチエン、直鎖低密度ポリエチレン、エチレン−酢酸
ビニル共重合体、エチレン−メタアクリル酸メチル共重
合体、エチレン−メタアクリル酸エチル共重合体、エチ
レン−メタアクリル酸共重合体、エチレン−アクリル酸
共重合体等、従来公知のもの、あるいはこれらの混合物
等が挙げられる。この転写防止層は、粘着テープの伸び
特性を妨げず、基材フィルムのブロッキングを防止する
ためのものである。
The resin for the transfer prevention layer used in the present invention is preferably, for example, an ethylene resin, and is preferably a low-density polyethylene, a linear low-density polyethylene, an ethylene-vinyl acetate copolymer, or an ethylene-methyl methacrylate copolymer. A conventionally known polymer such as a polymer, an ethylene-ethyl methacrylate copolymer, an ethylene-methacrylic acid copolymer, an ethylene-acrylic acid copolymer, or a mixture thereof may be used. This anti-transfer layer does not hinder the elongation characteristics of the pressure-sensitive adhesive tape and is intended to prevent blocking of the base film.

【0024】なお、粘着テープ延伸時の粘着テープと治
具との摩擦を減少し、基材フィルムのネッキングを防止
するために転写防止層として低密度ポリエチレン、エチ
レン−酢酸ビニル共重合体、さらにエチレン−酢酸ビニ
ル共重合体は酢酸ビニル含量が5wt%以下のエチレン
−酢酸ビニル共重合体を用いることが好ましい。
In order to reduce friction between the adhesive tape and the jig during stretching of the adhesive tape and prevent necking of the base film, a low-density polyethylene, an ethylene-vinyl acetate copolymer, and It is preferable to use an ethylene-vinyl acetate copolymer having a vinyl acetate content of 5% by weight or less as the vinyl acetate copolymer.

【0025】中心層と粘着剤塗布層又は転写防止層とを
積層する方法としては共押出法、熱融着または接着剤に
よるラミネート法など公知の方法が用いられる。接着剤
を用いて積層する場合の接着剤としては、エチレン−酢
酸ビニル共重合体、これをマレイン酸変性したもの、マ
レイン酸変性エチレン−α−オレフィン共重合体、共重
合ポリエステル系樹脂等従来公知の接着性化合物、又は
これらの混合物等を用いることができる。
As a method of laminating the center layer and the pressure-sensitive adhesive coating layer or the transfer prevention layer, a known method such as a co-extrusion method, heat fusion or lamination method with an adhesive is used. Examples of the adhesive in the case of laminating using an adhesive include an ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-α-olefin copolymer, a copolymerized polyester resin, and the like. Adhesive compounds, or mixtures thereof.

【0026】なお、接着剤として用いるエチレン−酢酸
ビニル共重合体、またはこの共重合体のマレイン酸変性
体は酢酸ビニル含量が20wt%以上のものが接着力が
大きく層間剥離を起こし難いので好ましい。この積層フ
ィルムの製造は共押出法、ラミネート法など公知の方法
が用いられる。
The ethylene-vinyl acetate copolymer used as an adhesive or the maleic acid-modified copolymer of this copolymer is preferably one having a vinyl acetate content of 20% by weight or more, since it has a large adhesive strength and hardly causes delamination. Known methods such as a coextrusion method and a lamination method are used for the production of the laminated film.

【0027】基材フィルムの厚みは、強伸度特性、放射
線透過性の観点から通常30〜300μmが適当であ
る。基材フィルムの中心層の厚さ比率は、基材フィルム
の要求特性に応じて任意に設定されるが、通常基材フィ
ルムの総厚に対して30%以上が好ましく、50〜90
%がより好ましく、粘着剤塗布層あるいは転写防止層の
一方のみを設けるより、両方とも設けた方が、上記で述
べた他に基材フィルムの構造が対称系となるので、基材
フィルムの端がどちらか一方にカールすることがなく、
操作上好ましいという利点もある。
The thickness of the substrate film is usually preferably from 30 to 300 μm from the viewpoints of strong elongation characteristics and radiation transparency. The thickness ratio of the center layer of the base film is arbitrarily set according to the required characteristics of the base film, but is usually preferably 30% or more with respect to the total thickness of the base film.
% Is more preferable, and the provision of both the pressure-sensitive adhesive coating layer and the transfer prevention layer provides a symmetrical structure of the base film in addition to the above, so that the end of the base film is provided. Does not curl on either side,
There is also the advantage of being operationally favorable.

【0028】なお、基材フィルムの転写防止層側表面を
シボ加工もしくは滑剤コーティングするとブロッキング
防止、粘着テープ延伸時の粘着テープと治具との摩擦を
減少することによる基材フィルムのネッキング防止など
の効果がある。
The surface of the base material film on the transfer prevention layer side is subjected to graining or lubricant coating to prevent blocking, and to prevent necking of the base material film by reducing friction between the adhesive tape and the jig when the adhesive tape is stretched. effective.

【0029】放射線硬化性粘着剤としては、従来公知の
粘着剤が用いられるがアクリル系粘着剤100重量部に
対し炭素−炭素二重結合を有するシアヌレート化合物及
びイソシアヌレート化合物の群から選ばれた少なくとも
一種の化合物10〜200重量部と炭素−炭素二重結合
を二個有する直鎖状のポリエステルまたはポリオール系
ウレタンアクリレート化合物5〜100重量部とを含有
する粘着剤を用いると放射線照射後の粘着剤層のゴム状
弾性を維持することができるため放射線照射後における
粘着テープのゴム状弾性(柔軟性)を維持する効果が特
に大きい。
As the radiation-curable pressure-sensitive adhesive, a conventionally known pressure-sensitive adhesive is used. At least one selected from the group consisting of a cyanurate compound and an isocyanurate compound having a carbon-carbon double bond per 100 parts by weight of an acrylic pressure-sensitive adhesive is used. When using an adhesive containing 10 to 200 parts by weight of one kind of compound and 5 to 100 parts by weight of a linear polyester or polyol urethane acrylate compound having two carbon-carbon double bonds, an adhesive after irradiation with radiation Since the rubbery elasticity of the layer can be maintained, the effect of maintaining the rubbery elasticity (flexibility) of the pressure-sensitive adhesive tape after irradiation is particularly large.

【0030】なお、本発明の半導体ウエハ固定用粘着テ
ープを紫外線照射によって硬化させる場合には、光重合
開始剤、例えばイソプロピルベンゾインエーテル、イソ
ブチルベンゾインエーテル、ベンゾフェノン、ミヒラー
ズケトン、クロロチオキサントン、ドデシルチオキサン
トン、ジメチルチオキサントン、ジエチルチオキサント
ン、ベンジルジメチルケタール、α−ヒドロキシシクロ
ヘキシルフェニルケトン、2−ヒドロキシメチルフェニ
ルプロパン等を粘着剤層に添加すると硬化反応時間また
は紫外線照射量が少なくても効率よく硬化反応を進行さ
せ、素子固定粘着力を低下させることができる。
When the adhesive tape for fixing a semiconductor wafer of the present invention is cured by ultraviolet irradiation, a photopolymerization initiator such as isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone is used. , Diethylthioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, etc. added to the pressure-sensitive adhesive layer allows the curing reaction to proceed efficiently even if the curing reaction time or the amount of ultraviolet irradiation is small, and the element is fixed. Adhesive strength can be reduced.

【0031】さらに必要に応じて放射線照射後の素子固
定粘着力を良好に低下させるため放射線硬化性のシリコ
ンアクリレート又はシリコンメタアクリレートあるいは
被着体である半導体ウエハの表面に金属物質のコーティ
ングされている特殊処理面に対しても同様に素子固定粘
着力を低下させるため、イオン封鎖剤等を、またタッキ
ファイア、粘着調整剤、界面活性剤など、あるいはその
他の改質剤及び慣用成分を配合することができる。この
放射線硬化性粘着剤層の厚さは通常2〜50μmとす
る。
Further, if necessary, the surface of a radiation-curable silicon acrylate or silicon methacrylate or a semiconductor wafer as an adherend is coated with a metal substance in order to properly reduce the adhesive strength of fixing the element after irradiation. In order to similarly reduce the adhesive strength for fixing the element to the specially treated surface, an ion sequestering agent, etc., and a tackifier, an adhesion regulator, a surfactant, etc., or other modifiers and conventional components should be blended. Can be. The thickness of the radiation-curable pressure-sensitive adhesive layer is usually 2 to 50 μm.

【0032】[0032]

【実施例】次に本発明を実施例に基づきさらに詳細に説
明する。なお、以下の実施例で各特性は次のように試験
し、評価した。
Next, the present invention will be described in more detail with reference to examples. In the following examples, each characteristic was tested and evaluated as follows.

【0033】1)粘着力(g/25mm) 素子固定粘着力の照射前の大きさと照射後の低下の程度
を調べた。作成した放射線硬化性粘着テープに直径5イ
ンチの大きさのSiウエハを被着体とし、JIS−Z0
237に基づき紫外線照射前後の粘着力を測定した(9
0°剥離、剥離速度50mm/min)。この際、粘着テープ
に貼合するウエハの表面状態は、鏡面状態とした。
1) Adhesive Force (g / 25 mm) The magnitude of the element-fixed adhesive force before irradiation and the degree of decrease after irradiation were examined. A 5-inch diameter Si wafer was used as an adherend on the radiation-curable pressure-sensitive adhesive tape thus prepared, and JIS-Z0
The adhesive force before and after ultraviolet irradiation was measured based on 237 (9).
0 ° peeling, peeling speed 50 mm / min). At this time, the surface state of the wafer bonded to the adhesive tape was a mirror surface state.

【0034】2)素子間隙(μm) 粘着テープ延伸時の素子間隙の大きさと縦方向/横方向
の均一性の程度を調べた。作成した放射線硬化性粘着テ
ープに固定した直径5インチのSiウエハをダイシンン
グソーで3×3mmの大きさにフルカットし、紫外線照
射による硬化後、ウエハ拡張装置(エアー圧2.0kg/c
m )にてエキスパンドストロークを10mm上昇させて
延伸した際の縦方向、横方向の素子間隙量を測定し、素
子間隙の大きさ、均一性をみた。ここで素子間隙量は、
ダイシング時のブレード厚さ40μmを含む。
2) Element gap (μm) The size of the element gap and the degree of uniformity in the vertical and horizontal directions when the adhesive tape was stretched were examined. A 5-inch diameter Si wafer fixed to the prepared radiation-curable adhesive tape was fully cut into a size of 3 × 3 mm with a dicing saw, cured by ultraviolet irradiation, and then expanded with a wafer expansion device (air pressure 2.0 kg / c).
In m), the length of the element gap in the vertical and horizontal directions when the expanded stroke was raised by 10 mm and stretched was measured, and the size and uniformity of the element gap were observed. Here, the element gap amount is
Including the blade thickness of 40 μm during dicing.

【0035】3)粘着テープのエキスパンド時の強度 エキスパンドストローク30mm時のテープの状態を調
べた。前記2)の方法と同様な方法で3×3mmの大き
さにフルカットし、エキスパンドストロークを30mm
上昇させて延伸した際の粘着テープが破断しているかど
うかの状態をみた。
3) Strength of Expanding Adhesive Tape The state of the tape at an expanding stroke of 30 mm was examined. Full cut into a size of 3 × 3 mm in the same manner as in the method 2), and the expand stroke is 30 mm.
The state of whether or not the pressure-sensitive adhesive tape when it was raised and stretched was broken was examined.

【0036】実施例1〜6及び比較例1〜4 表1及び表2に示したような各層構成の基材フィルムを
押出機を使用して下記樹脂A〜E単体またはニーダー練
りブレンド組成物などを用いて(共)押出加工により作
成した。得られた基材フィルム(粘着剤塗布層、中心
層、転写防止層からなる)の厚みはすべて100μであ
る。得られた基材フィルムの粘着剤塗布層側にコロナ処
理をして、乾燥後の粘着後の粘着剤層の厚さが10μm
となるように粘着剤を塗布し、放射線硬化性粘着テープ
を作成した。
Examples 1 to 6 and Comparative Examples 1 to 4 Using the extruder, a base film having each of the layers shown in Tables 1 and 2 was used as a resin A to E alone or in a kneaded blend composition. By using (co) extrusion processing. The thickness of each of the obtained base films (consisting of the pressure-sensitive adhesive applied layer, the center layer, and the transfer prevention layer) is 100 μm. The obtained base film is subjected to a corona treatment on the side of the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer after drying has a thickness of 10 μm.
An adhesive was applied so as to obtain a radiation-curable adhesive tape.

【0037】使用した樹脂、粘着剤を下記に示す。 樹脂A(ポリアミド−ポリエーテル系共重合体):東レ
製 ペバックス 3533SNOO 樹脂B(ポリアミド−ポリエーテル系共重合体):ダイ
セル化学製 ダイアミドPAE 47MS1 EPR(エチレン−プロピレン−ジエン共重合体):日
本合成ゴム製 EP 51 樹脂C(ポリアミド):ダイセル化学製 ダイアミド
L1940 樹脂D(ポリアミド):東レ製 アラミド CM104
1 樹脂E(ポリブテン−1) EVA−10(エチレン−酢酸ビニル共重合体(酢酸ビ
ニル含量10%)):住友化学工業製 エバテート H2
021F EVA−3(エチレン−酢酸ビニル共重合体(酢酸ビニ
ル含量3%)):三菱油化製 ユカロン−エバ V11
3K LLDPE(直鎖低密度ポリエチレン):東ソー製 ペ
トロセン 205 粘着剤A:アクリル系粘着剤 100重量部 イソシアヌレート化合物 80重量部 ウレタンアクリレート化合物 20重量部 光重合開始剤 1重量部 粘着剤B:アクリル系粘着剤 100重量部 シアヌレート化合物 40重量部 ウレタンアクリレート化合物 10重量部
The resins and adhesives used are shown below. Resin A (polyamide-polyether copolymer): Pebax 3533SNOO manufactured by Toray Resin B (polyamide-polyether copolymer): Daiamide PAE 47MS1 EPR (ethylene-propylene-diene copolymer) manufactured by Daicel Chemical: Nippon Gosei Rubber EP 51 resin C (polyamide): Daiamide manufactured by Daicel Chemical
L1940 Resin D (polyamide): Aramid CM104 manufactured by Toray
1 Resin E (polybutene-1) EVA-10 (ethylene-vinyl acetate copolymer (vinyl acetate content 10%)): Evatate H2 manufactured by Sumitomo Chemical Co., Ltd.
021F EVA-3 (ethylene-vinyl acetate copolymer (vinyl acetate content 3%)): Yucalon-Eva V11 manufactured by Mitsubishi Yuka
3K LLDPE (linear low-density polyethylene): Tosoh Petrocene 205 Adhesive A: Acrylic adhesive 100 parts by weight Isocyanurate compound 80 parts by weight Urethane acrylate compound 20 parts by weight Photopolymerization initiator 1 part by weight Adhesive B: acrylic Adhesive 100 parts by weight Cyanurate compound 40 parts by weight Urethane acrylate compound 10 parts by weight

【0038】[0038]

【発明の効果】本発明の半導体固定用粘着テープを半導
体ウエハ等の切断加工に用いた場合、放射線照射後の粘
着テープにおいて、粘着テープをネッキングもしくは破
断することなく延伸できるため、素子間隙の大幅な拡大
を行うことができる。よって、素子小片の画像認識が容
易となる。よって、素子を容易にしかも損傷することな
く、ピックアップすることができるという優れた効果を
奏する。
When the adhesive tape for fixing a semiconductor of the present invention is used for cutting a semiconductor wafer or the like, the adhesive tape after irradiation can be stretched without necking or breaking the adhesive tape. Large expansion can be performed. Therefore, the image recognition of the element piece becomes easy. Therefore, there is an excellent effect that the element can be picked up easily and without damage.

【表1】 [Table 1]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 石渡 伸一 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (72)発明者 岩本 和繁 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (72)発明者 長谷部 守邦 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (56)参考文献 特開 平5−148457(JP,A) 特開 昭63−17980(JP,A) 特開 平5−28828(JP,A) 特開 平4−270760(JP,A) (58)調査した分野(Int.Cl.7,DB名) C09J 7/02 H01L 21/301 H01L 21/68 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinichi Ishiwatari 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (72) Inventor Kazushige Iwamoto 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (72) Inventor Morikuni Hasebe 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (56) References JP-A-5-148457 (JP, A) JP-A Sho 63-17980 (JP, A) JP-A-5-28828 (JP, A) JP-A-4-270760 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C09J 7/02 H01L 21/301 H01L 21/68

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基材フィルムの片側に放射線硬化性粘着
剤層を設けてなる半導体ウエハ固定用粘着テープにおい
て、前記基材フィルムが、層構成として中心層にポリア
ミド−ポリエーテル系共重合体フィルム層を有し、この
層に対し接着層を介して、または直接、放射線硬化性粘
着剤層側に粘着剤塗布層を、他方側に転写防止層を有す
る積層フィルムであることを特徴とする半導体ウエハ固
定用粘着テープ。
1. A pressure-sensitive adhesive tape for fixing a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer provided on one side of a substrate film, wherein the substrate film has a polyamide-polyether copolymer film in a central layer as a layer structure. A semiconductor film having a layer, an adhesive coating layer on the side of the radiation-curable pressure-sensitive adhesive layer, or an adhesive coating layer on the side of the radiation-curable pressure-sensitive adhesive layer, and a transfer prevention layer on the other side. Adhesive tape for wafer fixing.
JP32650091A 1991-11-14 1991-11-14 Adhesive tape for fixing semiconductor wafers Expired - Lifetime JP3012060B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32650091A JP3012060B2 (en) 1991-11-14 1991-11-14 Adhesive tape for fixing semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32650091A JP3012060B2 (en) 1991-11-14 1991-11-14 Adhesive tape for fixing semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH05148462A JPH05148462A (en) 1993-06-15
JP3012060B2 true JP3012060B2 (en) 2000-02-21

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ID=18188525

Family Applications (1)

Application Number Title Priority Date Filing Date
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US7866556B2 (en) 2007-09-20 2011-01-11 Verifone Inc. Electromagnetic field induced MSR swipes detection
US9208361B1 (en) 2014-12-18 2015-12-08 Verifone Inc. Magnetic stripe card reader

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WO2014192630A1 (en) * 2013-05-29 2014-12-04 三井化学東セロ株式会社 Semiconductor wafer protection film and production method for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7866556B2 (en) 2007-09-20 2011-01-11 Verifone Inc. Electromagnetic field induced MSR swipes detection
US7886976B2 (en) 2007-09-20 2011-02-15 Verifone, Inc. Electromagnetic field induced MSR swipes detection
US9208361B1 (en) 2014-12-18 2015-12-08 Verifone Inc. Magnetic stripe card reader

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