JP3008623B2 - Adhesive tape for fixing semiconductor wafers - Google Patents

Adhesive tape for fixing semiconductor wafers

Info

Publication number
JP3008623B2
JP3008623B2 JP34885791A JP34885791A JP3008623B2 JP 3008623 B2 JP3008623 B2 JP 3008623B2 JP 34885791 A JP34885791 A JP 34885791A JP 34885791 A JP34885791 A JP 34885791A JP 3008623 B2 JP3008623 B2 JP 3008623B2
Authority
JP
Japan
Prior art keywords
adhesive tape
layer
ethylene
sensitive adhesive
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP34885791A
Other languages
Japanese (ja)
Other versions
JPH05156219A (en
Inventor
宏志 中山
憲司 望木
栄二 白松
伸一 石渡
和繁 岩本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THE FURUKAW ELECTRIC CO., LTD.
Original Assignee
THE FURUKAW ELECTRIC CO., LTD.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by THE FURUKAW ELECTRIC CO., LTD. filed Critical THE FURUKAW ELECTRIC CO., LTD.
Priority to JP34885791A priority Critical patent/JP3008623B2/en
Publication of JPH05156219A publication Critical patent/JPH05156219A/en
Application granted granted Critical
Publication of JP3008623B2 publication Critical patent/JP3008623B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、各種半導体を製造する
工程において使用する粘着テープに関し、さらに詳しく
いえば、例えばパターンを形成したウエハを一つ一つの
パターン毎に切断し半導体素子として分割する際に使用
する半導体ウエハ固定用の放射線硬化性粘着テープに関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape used in a process for manufacturing various semiconductors. More specifically, for example, a wafer on which a pattern is formed is cut into individual patterns and divided into semiconductor elements. The present invention relates to a radiation-curable pressure-sensitive adhesive tape for fixing a semiconductor wafer used at the time.

【0002】[0002]

【従来の技術】従来、回路パターンの形成された半導体
ウエハを素子小片に切断分離するダイシング加工を行う
際は、放射線硬化性粘着テープを用いるピックアップ方
式が提案されている。
2. Description of the Related Art Conventionally, a pickup method using a radiation-curable pressure-sensitive adhesive tape has been proposed for performing a dicing process for cutting and separating a semiconductor wafer on which a circuit pattern is formed into element pieces.

【0003】これは放射線、例えば紫外線のような光、
または電子線のような電離性放射線を透過する基材フィ
ルムと、この基材フィルム上に塗工された放射線照射に
より硬化する性質を有する粘着剤層とからなる半導体ウ
エハ固定用粘着テープを用いる方式で、詳しくはこの粘
着テープを半導体ウエハに貼着しダイシング加工時には
素子固定粘着力を強固に保ち、半導体ウエハを素子小片
に切断分離後には基材フィルム側より放射線照射を行い
放射線硬化型粘着層を硬化させて素子固定粘着力を大幅
に低下させて、素子小片の大きさに関係なく例えば25mm
2 以上の大きな素子であっても容易にピックアップする
ことができるようにした方式である。この方式は、放射
線透過性の基材フィルム上に放射線硬化性粘着剤を塗工
した半導体ウエハ固定用粘着テープの粘着剤層中に含ま
れる放射線硬化性化合物を放射線照射によって硬化させ
粘着剤に三次元網状化構造を与えて、その流動性と粘着
性を著しく低下させる原理に基づくものである。
This is radiation, for example light such as ultraviolet light,
Or a method using an adhesive tape for fixing a semiconductor wafer comprising a base film that transmits ionizing radiation such as an electron beam, and an adhesive layer having a property of being cured by irradiation of radiation applied to the base film. In detail, this adhesive tape is adhered to the semiconductor wafer and the element fixing adhesive strength is kept strong during the dicing process, and after the semiconductor wafer is cut and separated into small pieces, radiation is applied from the base film side to the radiation-curable adhesive layer. By hardening the element fixing adhesive force is greatly reduced, regardless of the size of the element piece, for example, 25 mm
This is a system in which even large elements of two or more can be easily picked up. In this method, a radiation-curable compound contained in an adhesive layer of a semiconductor wafer fixing adhesive tape in which a radiation-curable adhesive is coated on a radiation-transparent base film is cured by irradiation with radiation, and the adhesive is tertiarily cured. It is based on the principle of providing a primary reticulated structure and significantly reducing its fluidity and tackiness.

【0004】しかし、このような粘着テープでは放射線
硬化性化合物の硬化反応により粘着剤を硬化させて三次
元網状化構造を与え粘着力を低下させるため、ダイシン
グ加工時に有していた粘着テープのゴム状弾性がピック
アップ時には殆ど無くなってしまう結果となる。このた
め、従来行われていた粘着テープの放射状延伸による素
子間隙の拡大ができなくなる場合がある。
However, in such an adhesive tape, the adhesive is cured by a curing reaction of a radiation-curable compound to give a three-dimensional network structure and reduce the adhesive strength. As a result, the shape elasticity is almost lost during pickup. For this reason, it may not be possible to enlarge the element gap by the conventional radial stretching of the adhesive tape.

【0005】この問題を解決するため、軟質ポリ塩化ビ
ニル(PVC)を基材フィルムの中心層とするものがす
でに実用化されているが、ポリ塩化ビニルは塩素系樹脂
であり、しかも金属化合物からなる安定剤や可塑剤を含
有しているため、塩素イオン、金属イオン、可塑剤など
が移行して半導体ウエハの表面を汚染する原因となるこ
とがあった。
[0005] In order to solve this problem, those using flexible polyvinyl chloride (PVC) as a central layer of a substrate film have already been put into practical use. In some cases, chlorine ions, metal ions, plasticizers, etc. migrate to cause contamination of the surface of the semiconductor wafer due to the inclusion of such stabilizers and plasticizers.

【0006】そこで、特開昭63−17980号に開示
されるようにエチレン−アクリル酸共重合体等の重合体
構成単位としてカルボキシル基を有する化合物を含む重
合体からなる基材フィルム上に放射線硬化性粘着剤を塗
工してなる粘着テープが提案された。しかし、この粘着
テープは、3×3mm程度の小チップに分割する場合、放
射線照射前の延伸では、素子間隙の素子同士の接触を防
止するに足りるだけの拡大は可能であるが、放射線照射
後の延伸においても画像認識をともなうピックアップ装
置にて必要とされる素子小片の大幅で均一な間隙量をと
るには、放射線照射後の延伸時に、放射線照射による基
材フィルム劣化による破断が起こるなど特性として不十
分なものであった。
Therefore, as disclosed in JP-A-63-17980, radiation-curing is performed on a base film made of a polymer containing a compound having a carboxyl group as a polymer constituent unit such as an ethylene-acrylic acid copolymer. A pressure-sensitive adhesive tape coated with a hydrophilic pressure-sensitive adhesive has been proposed. However, when this adhesive tape is divided into small chips of about 3 x 3 mm, stretching before irradiation can expand the element enough to prevent contact between elements in the element gap, but after irradiation, In order to obtain a large and uniform gap of the element pieces required for the pickup device with image recognition even in the stretching of the film, characteristics such as breakage due to deterioration of the base film due to radiation irradiation during stretching after irradiation Was inadequate.

【0007】一方、特開平2−215528号に開示さ
れるように、ゴム状弾性を有する熱可塑性樹脂例えば、
ポリブテン−1、ポリウレタン、ポリエステルエラスト
マー、1,2−ポリブタジエン、スチレン−イソプレン
−スチレン共重合体の水添物、スチレン−エチレン−ブ
テン−スチレン共重合体(SEBS)を中心層とする積
層フィルムを基材フィルムとする粘着テープが提案され
た。しかし、これらの粘着テープの中には、、放射線照
射後の延伸においても画像認識をともなうピックアップ
装置にて必要とされる素子小片の大幅で均一な間隙量を
とるには、基材フィルム自体のネッキング(フィルム延
伸時、力の伝播性不良による部分的な伸びの発生)や放
射線照射による基材フィルムの劣化に伴うゴム状弾性の
喪失など特性として不十分なものがあった。
On the other hand, as disclosed in JP-A-2-215528, a thermoplastic resin having rubber-like elasticity, for example,
Polybutene-1, polyurethane, polyester elastomer, 1,2-polybutadiene, hydrogenated styrene-isoprene-styrene copolymer, based on a laminated film having a central layer of styrene-ethylene-butene-styrene copolymer (SEBS) Adhesive tapes as material films have been proposed. However, in these adhesive tapes, in order to obtain a large and uniform gap amount of element pieces required in a pickup device with image recognition even after stretching after irradiation with radiation, the base film itself must be formed. There were insufficient properties such as necking (partial elongation due to poor force propagation during film stretching) and loss of rubbery elasticity due to deterioration of the base film due to irradiation.

【0008】[0008]

【発明が解決しようとする課題】本発明は、上記の問題
点を解決した半導体ウエハ固定用粘着テープを提供する
ことを目的とする。すなわち、本発明においては基材フ
ィルムの中心層の材質につき鋭意検討し、放射線照射後
の粘着テープにおいてゴム状弾性(柔軟性)を維持する
と同時に放射線照射による基材フィルム劣化による破断
が起こらないため、放射線照射後の粘着テープ延伸によ
る素子間隙の大幅で均一な拡大を行うことができ、ピッ
クアップ時の熱による破断も起こらない半導体ウエハ固
定用粘着テープを提供するものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer which has solved the above-mentioned problems. In other words, in the present invention, the material of the center layer of the base film is carefully studied, and the adhesive tape after irradiation is maintained in a rubber-like elasticity (flexibility), and at the same time, is not broken due to deterioration of the base film due to irradiation. Another object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer, in which the gap between the elements can be largely and uniformly enlarged by stretching the adhesive tape after irradiation with radiation, and there is no breakage due to heat during pickup.

【0009】[0009]

【課題を解決するための手段】本発明者らは、上記の目
的を達成するために鋭意研究を重ねた結果、基材フィル
ムの中心層としてエチレン−メタアクリル酸共重合体の
分子間を亜鉛イオンで架橋したアイオノマー樹脂を有す
るものが、放射線照射後の粘着テープ延伸による素子間
隙の大幅で均一な拡大を可能にし、ピックアップ時に用
いるダイボンダーの熱による基材フィルムの破断を起き
ないことを見出し、この知見に基づき本発明をなすに至
った。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, have found that the ethylene-methacrylic acid copolymer has a zinc layer as the central layer of the base film. Those having an ionomer resin cross-linked with ions, enable a large and uniform expansion of the element gap by stretching the adhesive tape after irradiation, and found that the base film did not break due to the heat of the die bonder used during pickup. The present invention has been accomplished based on this finding.

【0010】すなわち本発明は、基材フィルムの片側に
放射線硬化性粘着層を設けてなる半導体ウエハ固定用粘
着テープにおいて、前記基材フィルムが、中心層として
エチレン−メタアクリル酸共重合体の分子間を亜鉛イオ
ンで架橋したアイオノマー樹脂フィルム層を有し、この
層に対し接着層を介して、または直接、放射線硬化性粘
着剤層側に粘着剤塗布層、他方側に転写防止層を有する
積層フィルムであることを特徴とする半導体ウエハ固定
用粘着テープを提供するものである。本発明において放
射線とは、紫外線のような光線、または電子線などの電
離性放射線をいう。
That is, the present invention relates to an adhesive tape for fixing a semiconductor wafer having a radiation-curable adhesive layer provided on one side of a substrate film, wherein the substrate film has an ethylene-methacrylic acid copolymer molecule as a central layer. A lamination having an ionomer resin film layer cross-linked with zinc ions, with an adhesive coating layer on this layer or directly on the radiation-curable pressure-sensitive adhesive layer side and a transfer prevention layer on the other side An object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer, which is a film. In the present invention, the term “radiation” refers to light such as ultraviolet light or ionizing radiation such as an electron beam.

【0011】本発明におけるアイオノマ−樹脂として
は、エチレン−メタアクリル酸共重合体の分子間を亜鉛
イオンで架橋したもの、上記共重合体に必要に応じてカ
ルボキシル基などの官能基を含む無水マレイン酸などの
低分子を付加または置換し変性した変性体等従来公知の
もの、あるいはこれらの混合物等が用いられ、基材フィ
ルムの要求特性、コストなどの諸事情に応じて樹脂の種
類、混合比率を任意に選択することができる。
As the ionomer resin in the present invention, an ethylene-methacrylic acid copolymer obtained by cross-linking the molecules of the copolymer with zinc ions, and maleic anhydride containing a functional group such as a carboxyl group, if necessary, may be added to the copolymer. Conventionally known modified products such as modified or modified by adding or substituting a low molecule such as an acid, or mixtures thereof are used. Depending on circumstances such as the required properties of the base film and cost, the type and mixing ratio of the resin are selected. Can be arbitrarily selected.

【0012】本発明のエチレン−メタアクリル酸共重合
体の分子間を亜鉛イオンで架橋したアイオノマ−樹脂に
おいて、分子間を架橋する金属を亜鉛に限定した理由
は、ウエハの特性(主として電気特性)に悪影響を及ぼ
すことがないからである。尚、本発明のエチレン−メタ
アクリル酸共重合体の分子間を亜鉛イオンで架橋したア
イオノマ−樹脂は、後述するブレンド組成での相溶性、
複層、積層構造での層間接着力を高めるため、アクリル
酸、アクリロニトリル、酢酸ビニルなどのモノマーをさ
らに共重合させたものでも良い。
In the ionomer resin of the present invention, in which the intermolecular cross-linking of the ethylene-methacrylic acid copolymer is carried out with zinc ions, the reason why the metal cross-linking between the molecules is limited to zinc is that the characteristics of the wafer (mainly the electric characteristics) Because it does not adversely affect Incidentally, the ionomer resin obtained by crosslinking the molecules of the ethylene-methacrylic acid copolymer of the present invention with zinc ions is compatible with a blend composition described below,
In order to increase the interlayer adhesive strength in a multilayer structure or a laminated structure, a monomer such as acrylic acid, acrylonitrile, vinyl acetate or the like may be further copolymerized.

【0013】また、本発明における基材フィルムの中心
層は、アイオノマー樹脂に他の樹脂をブレンドした組成
物からなるブレンド樹脂を用いることができる。本発明
のエチレン−メタアクリル酸共重合体の分子間を亜鉛イ
オンで架橋したアイオノマー樹脂とブレンドしうる樹脂
は、エチレン−メタアクリル酸共重合体の分子間を亜鉛
イオンで架橋したアイオノマー樹脂と相溶性があり、か
つ放射線透過性が良好な樹脂であれば特に制限されるも
のではない。
In the present invention, the center layer of the base film may be a blend resin made of a composition obtained by blending another resin with an ionomer resin. The resin that can be blended with the ionomer resin in which the molecules of the ethylene-methacrylic acid copolymer of the present invention are crosslinked with zinc ions is compatible with the ionomer resin in which the molecules of the ethylene-methacrylic acid copolymer are crosslinked with zinc ions. The resin is not particularly limited as long as it is soluble and has good radiation transmittance.

【0014】例えば、低密度ポリエチレン、直鎖低密度
ポリエチレン、ポリプロピレン、エチレン−プロピレン
共重合体、エチレン−酢酸ビニル共重合体、ポリメチル
ペンテン、エチレン−アクリル酸共重合体、エチレン−
メタアクリル酸共重合体、エチレン−アクリル酸エステ
ル共重合体、エチレン−メタアクリル酸エステル共重
体、エチレン−プロピレン−ジエン共重合体、スチレン
−イソプレン共重合体、スチレン−ブタジエン共重合、
スチレン−エチレン−ブテン共重合体などの単独重合
体、共重合体等従来公知のものあるいはこれらの混合
物、または他の樹脂及びエラストマーとの混合物等が挙
げられ基材フィルムの要求特性、コストなどの諸事情に
応じて樹脂の種類、ブレンド比率を任意に選択すること
ができる。尚、粘着剤塗布層、転写防止層との接着性に
優れた樹脂をブレンドすると粘着テープを延伸した時、
層間剥離を起こし難いので好ましい。
For example, low density polyethylene, linear low density polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer, polymethylpentene, ethylene-acrylic acid copolymer, ethylene-
Methacrylic acid copolymer, ethylene-acrylate copolymer, ethylene-methacrylate copolymer, ethylene-propylene-diene copolymer, styrene-isoprene copolymer, styrene-butadiene copolymer,
Homopolymers such as styrene-ethylene-butene copolymers, conventionally known copolymers such as copolymers or mixtures thereof, or mixtures with other resins and elastomers, and the like, required characteristics of the base film, cost, etc. The type of resin and the blend ratio can be arbitrarily selected according to various circumstances. In addition, when the pressure-sensitive adhesive tape is stretched by blending a resin having excellent adhesiveness with the pressure-sensitive adhesive coating layer and the transfer prevention layer,
This is preferable because delamination hardly occurs.

【0015】本発明の樹脂を調製するために混合手段と
しては、加熱ロール、バンバリーミキサー等が一般に採
用される。以上のような混合手段を用いると混合が容易
であるとともに確実であるので得られた基材フィルムは
折り曲げても白化現象はないという効果も有している。
As a mixing means for preparing the resin of the present invention, a heating roll, a Banbury mixer and the like are generally employed. The use of the mixing means as described above makes mixing easy and reliable, so that the obtained base film also has the effect that there is no whitening phenomenon even when bent.

【0016】また本発明において中心層となるアイオノ
マー樹脂フィルムと他の樹脂からなるフィルムとの複層
フィルムを中心層として用いることができる。複層とす
るためのフィルムは、例えば、相溶性のある樹脂、相溶
し難いが要求を満たす樹脂等従来公知のもの、あるいは
これらの混合物等からなるもので、基材フィルムの要求
特性、コストなどの諸事情に応じて任意に選択される。
また、このフィルムの厚みは、アイオノマー樹脂からな
るフィルムの厚み以下で任意に選択することができる特
にアイオノマー樹脂、粘着剤塗布層あるいは転写防止層
との接着性に優れた樹脂からなるフィルムを用いて複層
フィルムとすると、これを中心層として用いた粘着テー
プは延伸した時に層間剥離を起こし難いので好ましい。
In the present invention, a multilayer film of an ionomer resin film serving as a center layer and a film made of another resin can be used as the center layer. The film for forming the multilayer is, for example, a resin having compatibility, a resin that is hardly compatible but satisfies the requirement, and a conventionally known material such as a mixture thereof, or the like. It is arbitrarily selected according to various circumstances such as.
In addition, the thickness of this film can be arbitrarily selected below the thickness of the film made of the ionomer resin, in particular, the ionomer resin, using a film made of a resin having excellent adhesion with the pressure-sensitive adhesive coating layer or the transfer prevention layer. When a multi-layer film is used, the pressure-sensitive adhesive tape using this as a center layer is preferable because it does not easily cause delamination when stretched.

【0017】この複層フィルムの製法としては、従来公
知の共押出法、ラミネート法などが用いられ、この際通
常のラミネートフィルムの製造で通常行われているよう
に、複層フィルム間に接着剤を介在させてもよい。この
ような接着剤としては、エチレン−酢酸ビニル共重合体
またはこれをマレイン酸変性したもの等、従来公知の接
着剤を使用することができる。
As a method for producing the multilayer film, a conventionally known co-extrusion method, lamination method, or the like is used. At this time, an adhesive between the multilayer films is used, as is usually performed in the production of a normal laminated film. May be interposed. As such an adhesive, a conventionally known adhesive such as an ethylene-vinyl acetate copolymer or a maleic acid-modified ethylene-vinyl acetate copolymer can be used.

【0018】本発明において放射線硬化性粘着剤を塗布
する側の粘着剤塗布層用の樹脂としては、放射線透過性
で、Siウエハを汚染し難く、放射線硬化性粘着剤との粘
着力が大きいもの、例えばエチレン系のものが好まし
く、低密度ポリエチレン、直鎖低密度ポリエチレン、エ
チレン−酢酸ビニル共重合体、エチレン−メタアクリル
酸共重合体、エチレン−アクリル酸共重合体等、従来公
知のもの、あるいはこれらの混合物等が挙げられ、用い
られる放射線硬化性粘着剤との接着性によって任意に選
択することができる。この粘着剤塗布層は、粘着剤と基
材フィルムとの接着を強固にするための役割を果たし、
ウエハ加工後の粘着テープ延伸時に粘着剤の基材フィル
ムからの剥離による半導体ウエハの汚染防止に寄与す
る。
In the present invention, the resin for the pressure-sensitive adhesive coating layer on the side on which the radiation-curable pressure-sensitive adhesive is applied is a resin that is radiation-transparent, hardly contaminates the Si wafer, and has a large adhesive force with the radiation-curable pressure-sensitive adhesive. For example, preferably ethylene-based, low density polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene-acrylic acid copolymer, and conventionally known ones, Alternatively, a mixture of these and the like can be mentioned, and it can be arbitrarily selected depending on the adhesiveness to the radiation-curable pressure-sensitive adhesive to be used. This pressure-sensitive adhesive coating layer plays a role to strengthen the adhesion between the pressure-sensitive adhesive and the base film,
It contributes to prevention of contamination of the semiconductor wafer due to peeling of the adhesive from the base film when the adhesive tape is stretched after wafer processing.

【0019】本発明の転写防止層用の樹脂としては、例
えばエチレン系のものが好ましく、低密度ポリエチレ
ン、直鎖低密度ポリエチレン、エチレン−酢酸ビニル共
重合体、エチレン−メタアクリル酸共重合体、エチレン
−アクリル酸共重合体等、従来公知のもの、あるいはこ
れらの混合物等が挙げられる。この転写防止層は、粘着
テープの伸び特性を妨げず基材フィルムのブロッキング
を防止するためのものである。
As the resin for the anti-transfer layer of the present invention, for example, an ethylene resin is preferable, and low density polyethylene, linear low density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, Examples thereof include conventionally known ones such as an ethylene-acrylic acid copolymer, and mixtures thereof. This anti-transfer layer is for preventing blocking of the base film without hindering the elongation characteristics of the pressure-sensitive adhesive tape.

【0020】尚、粘着テープ延伸時の粘着テープと治具
との摩擦を減少し、基材フィルムのネッキングを防止す
るために転写防止層として低密度ポリエチレン、エチレ
ン−酢酸ビニル共重合体、さらにエチレン−酢酸ビニル
共重合体は酢酸ビニル含量が5wt%以下のエチレン−酢
酸ビニル共重合体を用いることが好ましい。
In order to reduce friction between the pressure-sensitive adhesive tape and the jig when the pressure-sensitive adhesive tape is stretched and to prevent necking of the base film, a low-density polyethylene, ethylene-vinyl acetate copolymer, and ethylene It is preferable to use an ethylene-vinyl acetate copolymer having a vinyl acetate content of 5% by weight or less as the vinyl acetate copolymer.

【0021】中心層と粘着剤塗布層又は転写防止層とを
積層する方法としては、共押出法、熱融着又は接着剤に
よるラミネート法など従来公知の方法が用いられる。接
着剤を用いて積層する場合の接着剤としては、エチレン
−酢酸ビニル共重合体、これをマレイン酸変性したも
の、マレイン酸変性エチレン−α−オレフィン共重合
体、共重合ポリエステル系樹脂等従来公知の接着性化合
物、又はこれらの混合物等を用いることができる。尚、
接着剤として用いるエチレン−酢酸ビニル共重合体、ま
たはこの共重合体のマレイン酸変性体は酢酸ビニル含量
が20%以上のものが接着力が大きく層間剥離を起こし難
いので好ましい。
As a method for laminating the center layer and the pressure-sensitive adhesive coating layer or the transfer prevention layer, a conventionally known method such as a co-extrusion method, heat fusion or lamination method with an adhesive is used. Examples of the adhesive in the case of laminating using an adhesive include an ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-α-olefin copolymer, a copolymerized polyester resin, and the like. Adhesive compounds, or mixtures thereof. still,
The ethylene-vinyl acetate copolymer used as an adhesive or the maleic acid-modified copolymer of this copolymer is preferably one having a vinyl acetate content of 20% or more because it has a large adhesive strength and hardly causes delamination.

【0022】基材フィルムの厚みは、強伸度特性、放射
線透過性の観点から通常30〜300μmが適当であ
る。基材フィルムの中心層の厚さ比率は、基材フィルム
の要求特性に応じて任意に設定されるが、通常基材フィ
ルムの総厚に対して30%以上が好ましく、50〜90
%がより好ましい。また粘着剤塗布層および転写防止層
の厚みは、基材フィルムのカールを防止するため、両層
ほぼ同じ厚みとすることが好ましい。尚、基材フィルム
の転写防止層側表面をシボ加工もしくは滑剤コーティン
グすると、ブロッキング防止、粘着テープ延伸時の粘着
テープと治具との摩擦を減少する事による基材フィルム
のネッキング防止などの効果があるので好ましい。
The thickness of the substrate film is usually preferably from 30 to 300 μm from the viewpoints of strong elongation characteristics and radiation transparency. The thickness ratio of the center layer of the base film is arbitrarily set according to the required characteristics of the base film, but is usually preferably 30% or more with respect to the total thickness of the base film.
% Is more preferred. The thickness of the pressure-sensitive adhesive coating layer and the thickness of the transfer prevention layer are preferably substantially the same in order to prevent curling of the base film. When the transfer prevention layer side surface of the base film is embossed or coated with a lubricant, effects such as blocking prevention and necking of the base film by reducing friction between the adhesive tape and the jig when the adhesive tape is stretched are reduced. Is preferred.

【0023】放射線硬化性粘着剤としては、特に制限な
く通常の粘着剤が用いられるが、アクリル系粘着剤10
0重量部に対し炭素−炭素二重結合を有するシアヌレー
ト化合物及びイソシアヌレート化合物の群から選ばれた
少なくとも一種の化合物10〜200重量部と炭素−炭
素二重結合を二個有する直鎖状のポリエステルまたはポ
リオール系ウレタンアクリレート化合物5〜100重量
部とを含有する粘着剤を用いると、放射線照射後の粘着
剤層のゴム状弾性を維持することができるため、放射線
照射後における粘着テープのゴム状弾性(柔軟性)を維
持する効果が特に大きい。
As the radiation-curable pressure-sensitive adhesive, a normal pressure-sensitive adhesive is used without any particular limitation.
A linear polyester having 10 to 200 parts by weight of at least one compound selected from the group consisting of a cyanurate compound and a isocyanurate compound having a carbon-carbon double bond and two carbon-carbon double bonds with respect to 0 part by weight; Alternatively, when a pressure-sensitive adhesive containing 5 to 100 parts by weight of a polyol urethane acrylate compound is used, the rubber-like elasticity of the pressure-sensitive adhesive tape after irradiation can be maintained because the rubber-like elasticity of the pressure-sensitive adhesive layer after irradiation can be maintained. The effect of maintaining (flexibility) is particularly large.

【0024】なお、本発明の半導体ウエハ固定用粘着テ
ープを紫外線照射によって硬化させる場合には、光重合
開始剤、例えばイソプロピルベンゾインエーテル、イソ
ブチルベンゾインエーテル、ベンゾフェノン、ミヒラー
ズケトン、クロロチオキサントン、ドデシルチオキサン
トン、ジメチルチオキサントン、ジエチルチオキサント
ン、ベンジルジメチルケタール、α−ヒドロキシシクロ
ヘキシルフェニルケトン、2−ヒドロキシメチルフェニ
ルプロパン等を粘着剤層に添加すると硬化反応時間また
は紫外線照射量が少なくても効率よく硬化反応を進行さ
せ、素子固定粘着力を低下させることができる。
When the adhesive tape for fixing a semiconductor wafer of the present invention is cured by ultraviolet irradiation, a photopolymerization initiator such as isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone is used. , Diethylthioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, etc. added to the pressure-sensitive adhesive layer allows the curing reaction to proceed efficiently even if the curing reaction time or the amount of ultraviolet irradiation is small, and the element is fixed. Adhesive strength can be reduced.

【0025】さらに必要に応じて放射線照射後の素子固
定粘着力を良好に低下させるため放射線硬化性のシリコ
ンアクリレート又はシリコンメタアクリレートあるいは
被着体である半導体ウエハの表面に金属物質のコーティ
ングされている特殊処理面に対しても同様に素子固定粘
着力を低下させるため、イオン封鎖剤等を、またタッキ
ファイアー、粘度調整剤、界面活性剤など、あるいはそ
の他の改質剤および慣用成分を配合することができる。
この放射線硬化性粘着剤層の厚さは通常2〜50μmと
する。
If necessary, a radiation-curable silicon acrylate or silicon methacrylate or a semiconductor wafer as an adherend is coated with a metal substance in order to satisfactorily reduce the adhesive strength for fixing the element after irradiation. In order to similarly reduce the adhesive strength for fixing the element to the specially treated surface, an ion sequestering agent, etc., and a tackifier, a viscosity modifier, a surfactant, etc., or other modifiers and common components should be blended. Can be.
The thickness of the radiation-curable pressure-sensitive adhesive layer is usually 2 to 50 μm.

【0026】[0026]

【実施例】次に本発明を実施例に基づきさらに詳細に説
明する。 実施例1〜、比較例1〜 表1及び表2に示した各層構成の基材フィルムを押出機
を使用して、下記樹脂A〜単体またはニーダー練りブ
レンド組成物などを用いて共押出加工により作成した。
得られた基材フィルムの厚みはすべて100μmであ
る。得られた基材フィルムの粘着剤塗布層側にコロナ処
理をして、乾燥後の粘着剤層の厚さが10μmとなるよ
うに粘着剤を塗工し、放射線硬化性粘着テープを作成し
た。
Next, the present invention will be described in more detail with reference to examples. Examples 1 to 5 and Comparative Examples 1 and 2 The base films having the respective layer constitutions shown in Tables 1 and 2 were coexisted using an extruder using the following resins A to C alone or a kneaded kneading blend composition. It was prepared by extrusion.
All of the obtained base films have a thickness of 100 μm. The obtained base film was subjected to a corona treatment on the side of the pressure-sensitive adhesive layer, and a pressure-sensitive adhesive was applied so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, to prepare a radiation-curable pressure-sensitive adhesive tape.

【0027】使用した樹脂、粘着剤を下記に示す。 樹脂A(亜鉛イオン架橋エチレン−メタアクリル酸共重合体) :三井デュポンポリケミカル製 ハイミラン 1705 樹脂(エチレン−メタアクリル酸共重合体) :三井デュポンポリケミカル製 ニュクレル410 樹脂(1、2ポリブタジエン) :日本合成ゴム製 RB 805 SEB (スチレン−エチレン−ブテン共重合体) :シェル化学製 KRATON G1650 EVA−10(エチレン−酢酸ビニル共重合体(酢酸ビニル含量10%)) :住友化学工業製 エバテートH2021F EVA−3(エチレン−酢酸ビニル共重合体(酢酸ビニル含量 3%)) :三菱油化製 ユカロン−エバV113K LLDPE(低密度ポリエチレン) :東ソー製 ペトロセン205The resins and adhesives used are shown below. Resin A (zinc ion crosslinked ethylene- methacrylic acid copolymer): Himilan 1705, manufactured by Du Pont-Mitsui Polychemicals Resin B (ethylene-methacrylic acid copolymer): Nucrel 410 resin C, manufactured by DuPont-Mitsui Poly (1,2 polybutadiene ): RB805 SEB (styrene-ethylene-butene copolymer) manufactured by Nippon Synthetic Rubber: KRATON G1650 EVA-10 (ethylene-vinyl acetate copolymer (vinyl acetate content 10%)) manufactured by Shell Chemical: Evatate manufactured by Sumitomo Chemical Co., Ltd. H2021F EVA-3 (Ethylene-vinyl acetate copolymer (vinyl acetate content: 3%)): Yucalon-Eva V113K LLDPE (low-density polyethylene) manufactured by Mitsubishi Yuka: Petrocene 205 manufactured by Tosoh

【0028】 粘着剤A:アクリル系粘着剤 100重量部 イソシアヌレート化合物 80重量部 ウレタンアクリレート化合物 20重量部 光重合開始剤 1重量部 粘着剤B:アクリル系粘着剤 100重量部 シアヌレート化合物 40重量部 ウレタンアクリレート化合物 10重量部Adhesive A: Acrylic adhesive 100 parts by weight Isocyanurate compound 80 parts by weight Urethane acrylate compound 20 parts by weight Photopolymerization initiator 1 part by weight Adhesive B: Acrylic adhesive 100 parts by weight Cyanurate compound 40 parts by weight Urethane Acrylate compound 10 parts by weight

【0029】得られた粘着テープにつき、下記の方法で
特性を評価し、表1及び表2に示した。各特性の評価方
法は下記のとおりである。
The properties of the obtained pressure-sensitive adhesive tape were evaluated by the following methods, and are shown in Tables 1 and 2. The evaluation method of each characteristic is as follows.

【0030】1)粘着力(g/25mm) 素子固定粘着力の照射前の大きさと照射後の低下の程度
を調べた。作成した放射線硬化性粘着テープに直径5イ
ンチの大きさのSiウエハを被着体とし、JIS−Z0
237に基づき紫外線照射前後の粘着力を測定した(9
0°剥離、剥離速度50mm/min) 。この際、粘着テープ
に貼合するウエハの表面状態は、鏡面状態とした。
1) Adhesive Strength (g / 25 mm) The magnitude of the adhesive strength for fixing the element before irradiation and the degree of decrease after irradiation were examined. A 5-inch diameter Si wafer was used as an adherend on the radiation-curable pressure-sensitive adhesive tape thus prepared, and JIS-Z0
The adhesive force before and after ultraviolet irradiation was measured based on 237 (9).
0 ° peeling, peeling speed 50 mm / min). At this time, the surface state of the wafer bonded to the adhesive tape was a mirror surface state.

【0031】2)素子間隙(μm) 粘着テープ延伸時の素子間隙の大きさと縦方向/横方向
の均一性の程度を調べた。作成した放射線硬化性粘着テ
ープに固定した直径5インチのSiウエハをダイシング
ソーで、3×3mm、6×6mmと2種類の大きさにフルカ
ットし、紫外線硬化後、ウエハ拡張装置(エアー圧2.0
kg/cm ) にて、エキスパンドストロークを10mm上昇さ
せて延伸した際の縦方向、横方向の素子間隙量を測定
し、素子間隙の大きさ、均一性をみた。ここで素子間隙
量は、ダイシング時のブレード厚さ40μmを含む。
2) Element gap (μm) The size of the element gap and the degree of uniformity in the vertical and horizontal directions when the adhesive tape was stretched were examined. A 5-inch diameter Si wafer fixed to the radiation-curable pressure-sensitive adhesive tape was fully cut into two sizes, 3 × 3 mm and 6 × 6 mm, using a dicing saw. After ultraviolet curing, the wafer expansion device (air pressure 2.0
kg / cm 2), the device gap in the vertical and horizontal directions when the film was stretched by increasing the expand stroke by 10 mm was measured, and the size and uniformity of the device gap were observed. Here, the element gap amount includes a blade thickness of 40 μm at the time of dicing.

【0032】3)粘着テープのエキスパンド時の強度 エキスパンドストローク30mm時のテープの状態を調べ
た。2)と同様な方法で3×3mmの大きさにフルカット
し、エキスパンドストロークを30mm上昇させて延伸し
た際の粘着テープが破断しているかどうかの状態をみ
た。
3) Strength of Expanding Adhesive Tape The state of the tape at an expanding stroke of 30 mm was examined. In the same manner as in 2), full cut was performed to a size of 3 × 3 mm, and the state of whether the adhesive tape was broken when stretched by increasing the expand stroke by 30 mm was examined.

【0033】4)粘着テープのピックアップ時の強度 素子ピックアップ時のテープの状態を調べた。2)と同
様な方法で3×3mmの大きさにフルカットし、エキスパ
ンドストロークを30mm上昇させて延伸した後、素子を
ピックアップする際の粘着テープが破断しているかどう
かの状態をみた。
4) Strength of adhesive tape during pickup The state of the tape during element pickup was examined. After full-cutting to a size of 3 × 3 mm in the same manner as in 2) and stretching the film by increasing the expand stroke by 30 mm, it was checked whether or not the adhesive tape when the element was picked up was broken.

【0034】[0034]

【表1】 [Table 1]

【0035】[0035]

【表2】 [Table 2]

【0036】[0036]

【発明の効果】本発明の半導体固定用粘着テープを半導
体ウエハ等の切断加工に用いた場合、放射線照射後の粘
着テープがゴム状弾性(柔軟性)を維持し延伸性が優れ
ていると同時に放射線照射による基材フィルム劣化によ
る破断が起こらないため粘着テープによる素子間隙の大
幅で均一な拡大が可能となるので、素子小片の画像認識
が容易となる。また、ピックアップ時の熱による破断も
起こらない。よって、素子を容易にしかも損傷すること
なくピックアップすることができるという優れた効果を
奏する。
When the adhesive tape for fixing a semiconductor of the present invention is used for cutting semiconductor wafers and the like, the adhesive tape after irradiation maintains rubber-like elasticity (flexibility) and has excellent stretchability. Since breakage due to deterioration of the base film due to irradiation does not occur, the gap between the elements can be greatly and uniformly enlarged by the adhesive tape, so that the image recognition of the element pieces becomes easy. Also, breakage due to heat during pickup does not occur. Therefore, there is an excellent effect that the element can be picked up easily and without damage.

フロントページの続き (72)発明者 岩本 和繁 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 審査官 佐藤 修 (56)参考文献 特開 平5−98220(JP,A) 特開 昭63−17980(JP,A) 特開 平3−121167(JP,A) 特開 昭62−141085(JP,A) 特開 昭49−118779(JP,A) (58)調査した分野(Int.Cl.7,DB名) C09J 7/02 H01L 21/301 H01L 21/68 Continuation of the front page (72) Inventor Kazushige Iwamoto 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Examiner, Furukawa Electric Co., Ltd. Osamu Sato (56) References JP-A-5-98220 (JP, A) JP-A-63-17980 (JP, A) JP-A-3-121167 (JP, A) JP-A-62-141085 (JP, A) JP-A-49-118779 (JP, A) (58) Int.Cl. 7 , DB name) C09J 7/02 H01L 21/301 H01L 21/68

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基材フィルムの片側に放射線硬化性粘着
剤層を設けてなる半導体ウエハ固定用粘着テープにおい
て、前記基材フィルムが、中心層としてエチレン−メタ
アクリル酸共重合体の分子間を亜鉛イオンで架橋したア
イオノマー樹脂フィルム層を有し、この層に対し接着層
を介して、または直接、放射線硬化性粘着剤層側に粘着
剤塗布層、他方側に転写防止層を有する積層フィルムで
あることを特徴とする半導体ウエハ固定用粘着テープ。
In a pressure-sensitive adhesive tape for fixing a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer provided on one side of a substrate film, the substrate film serves as a central layer between ethylene-methacrylic acid copolymer molecules. It has an ionomer resin film layer cross-linked with zinc ions, through an adhesive layer to this layer, or directly, a laminated film having a pressure-sensitive adhesive coating layer on the radiation-curable pressure-sensitive adhesive layer side and a transfer prevention layer on the other side. An adhesive tape for fixing a semiconductor wafer.
JP34885791A 1991-12-05 1991-12-05 Adhesive tape for fixing semiconductor wafers Expired - Lifetime JP3008623B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34885791A JP3008623B2 (en) 1991-12-05 1991-12-05 Adhesive tape for fixing semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34885791A JP3008623B2 (en) 1991-12-05 1991-12-05 Adhesive tape for fixing semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH05156219A JPH05156219A (en) 1993-06-22
JP3008623B2 true JP3008623B2 (en) 2000-02-14

Family

ID=18399856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34885791A Expired - Lifetime JP3008623B2 (en) 1991-12-05 1991-12-05 Adhesive tape for fixing semiconductor wafers

Country Status (1)

Country Link
JP (1) JP3008623B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4609852B2 (en) * 2005-09-22 2011-01-12 古河電気工業株式会社 Adhesive tape for semiconductor wafer dicing
JP5666875B2 (en) * 2010-10-21 2015-02-12 アキレス株式会社 Base film for tape for semiconductor manufacturing process
JP5764518B2 (en) * 2011-03-31 2015-08-19 古河電気工業株式会社 Dicing tape and semiconductor wafer processing method
JP6158753B2 (en) * 2014-06-03 2017-07-05 アキレス株式会社 Base film for tape for semiconductor manufacturing process

Also Published As

Publication number Publication date
JPH05156219A (en) 1993-06-22

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