JP2983721B2 - Adhesive tape for fixing semiconductor wafers - Google Patents

Adhesive tape for fixing semiconductor wafers

Info

Publication number
JP2983721B2
JP2983721B2 JP28038491A JP28038491A JP2983721B2 JP 2983721 B2 JP2983721 B2 JP 2983721B2 JP 28038491 A JP28038491 A JP 28038491A JP 28038491 A JP28038491 A JP 28038491A JP 2983721 B2 JP2983721 B2 JP 2983721B2
Authority
JP
Japan
Prior art keywords
ethylene
layer
adhesive tape
copolymer
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28038491A
Other languages
Japanese (ja)
Other versions
JPH0598220A (en
Inventor
宏志 中山
憲司 望木
栄二 白松
伸一 石渡
和繁 岩本
守邦 長谷部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP28038491A priority Critical patent/JP2983721B2/en
Publication of JPH0598220A publication Critical patent/JPH0598220A/en
Application granted granted Critical
Publication of JP2983721B2 publication Critical patent/JP2983721B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、各種半導体を製造する
工程において使用する粘着テープに関し、さらに詳しく
いえば、例えばパターンを形成したウエハを一つ一つの
パターン毎に切断し半導体素子として分割する際に使用
する半導体ウエハ固定用の放射線硬化性粘着テープに関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape used in a process for manufacturing various semiconductors. More specifically, for example, a wafer on which a pattern is formed is cut into individual patterns and divided into semiconductor elements. The present invention relates to a radiation-curable pressure-sensitive adhesive tape for fixing a semiconductor wafer used at the time.

【0002】[0002]

【従来の技術】従来、回路パターンの形成された半導体
ウエハを素子小片に切断分離するダイシング加工を行う
際は、放射線硬化性粘着テープを用いるピックアップ方
式が提案されている。
2. Description of the Related Art Conventionally, a pickup method using a radiation-curable pressure-sensitive adhesive tape has been proposed for performing a dicing process for cutting and separating a semiconductor wafer on which a circuit pattern is formed into element pieces.

【0003】これは放射線、例えば紫外線のような光、
または電子線のような電離性放射線を透過する基材フィ
ルムと、この基材フィルム上に塗工された放射線照射に
より硬化する性質を有する粘着剤層とからなる半導体ウ
エハ固定用粘着テープを用いる方法である。これは、よ
り詳しくはダイシング加工時の素子固定粘着力を強接着
力とし、半導体ウエハを素子小片に切断分離後、基材フ
ィルム側より放射線照射を行い放射線硬化型粘着剤層を
硬化させて、素子固定粘着力を大幅に低下させて素子小
片の大きさに関係なく、例えば25mm2 以上の大きな素
子であっても容易にピックアップすることができるよう
にした方式である。この方式は、放射線透過性の基材フ
ィルム上に放射線硬化性粘着剤を塗工した半導体ウエハ
固定用粘着テープの粘着剤層中に含まれる放射線硬化性
化合物を放射線照射によって硬化させ粘着剤に三次元網
状化構造を与えて、その流動性と粘着力を著しく低下さ
せる原理に基づくものである。
This is radiation, for example light such as ultraviolet light,
Or a method using a pressure-sensitive adhesive tape for fixing a semiconductor wafer comprising a base film that transmits ionizing radiation such as an electron beam, and a pressure-sensitive adhesive layer coated on the base film and having a property of being cured by irradiation with radiation. It is. More specifically, the element fixing adhesive force at the time of dicing processing is made to be a strong adhesive force, and after cutting and separating the semiconductor wafer into element pieces, irradiation is performed from the base film side to cure the radiation-curable adhesive layer, This is a method in which the element fixing adhesive force is greatly reduced so that a large element of, for example, 25 mm 2 or more can be easily picked up regardless of the size of the element piece. In this method, a radiation-curable compound contained in an adhesive layer of a semiconductor wafer fixing adhesive tape in which a radiation-curable adhesive is coated on a radiation-transparent base film is cured by irradiation with radiation, and the adhesive is tertiarily cured. It is based on the principle of providing a primary reticulated structure and significantly reducing its fluidity and adhesion.

【0004】しかし、このような粘着テープでは放射線
硬化性化合物の硬化反応により粘着剤を硬化させて三次
元網状化構造を与え粘着力を低下させるため、ダイシン
グ加工時に有していた粘着テープのゴム状弾性がピック
アップ時には殆ど無くなってしまう結果となる。このた
め、従来行われていた粘着テープの放射状延伸による素
子間隙の拡大ができなくなる場合がある。
However, in such an adhesive tape, the adhesive is cured by a curing reaction of a radiation-curable compound to give a three-dimensional network structure and reduce the adhesive strength. As a result, the shape elasticity is almost lost during pickup. For this reason, it may not be possible to enlarge the element gap by the conventional radial stretching of the adhesive tape.

【0005】この問題を解決するため、すでに軟質ポリ
塩化ビニル(PVC)を基材フィルムの中心層とするも
のが実用化されているが、ポリ塩化ビニルは塩素系樹脂
であり、しかも金属化合物からなる安定剤や可塑剤を含
有しているため、塩素イオン、金属イオン、可塑剤など
が移行して半導体ウエハの表面を汚染する原因となるこ
とがあった。
[0005] In order to solve this problem, a material in which soft polyvinyl chloride (PVC) is used as a central layer of a substrate film has already been put into practical use. In some cases, chlorine ions, metal ions, plasticizers, etc. migrate to cause contamination of the surface of the semiconductor wafer due to the inclusion of such stabilizers and plasticizers.

【0006】そこで、特開昭63−17980号に開示
されるようにエチレン−アクリル酸共重合体等の重合体
構成単位としてカルボキシル基を有する化合物を含む重
合体からなる基材フィルム上に放射線硬化性粘着剤を塗
工してなる粘着テープが提案された。しかし、この粘着
テープは3×3mm程度の小チップに分割する場合、放
射線照射前の延伸では、素子間隙の素子同士の接触を防
止するに足りるだけの拡大は可能であるが、放射線照射
後の延伸においては画像認識をともなうピックアップ装
置にて必要とされる素子小片の大幅、かつ、均一な間隙
量をとることは困難であった。また、照射線照射後の延
伸時に、放射線照射による基材フィルム劣化による破断
が起こるなど特性として不十分なものであった。
Therefore, as disclosed in JP-A-63-17980, radiation-curing is performed on a base film made of a polymer containing a compound having a carboxyl group as a polymer constituent unit such as an ethylene-acrylic acid copolymer. A pressure-sensitive adhesive tape coated with a hydrophilic pressure-sensitive adhesive has been proposed. However, when this adhesive tape is divided into small chips of about 3 × 3 mm, stretching before irradiation can expand the element gap enough to prevent contact between the elements, but after irradiation, In stretching, it has been difficult to obtain a large and uniform gap amount of element pieces required in a pickup device with image recognition. In addition, when the film was stretched after irradiation with radiation, the film was insufficient in properties such as breakage due to deterioration of the base film due to irradiation.

【0007】一方、特開平2−215528号に開示さ
れるように、ゴム状弾性を有する熱可塑性樹脂例えば、
ポリブテン−1、ポリウレタン、ポリエステルエラスト
マー、1,2−ポリブタジエン、スチレン−イソプレン
−スチレン共重合体の水添物、又はスチレン−エチレン
−ブテン−スチレン共重合体(SEBS)を中心層とす
る積層フィルムを基材フィルムとする粘着テープが提案
された。しかし、これらの粘着テープも、放射線照射後
の延伸においても画像認識をともなうピックアップ装置
にて必要とされる素子小片の大幅で均一な間隙量をとる
には、基材フィルム自体のネッキング(フィルム延伸
時、力の伝播性不良による部分的な伸びの発生)や放射
線照射による基材フィルムの劣化に伴うゴム状弾性の喪
失などを起こすことがあり特性上まだ不十分であった。
On the other hand, as disclosed in JP-A-2-215528, a thermoplastic resin having rubber-like elasticity, for example,
Polybutene-1, polyurethane, polyester elastomer, 1,2-polybutadiene, hydrogenated styrene-isoprene-styrene copolymer, or laminated film having styrene-ethylene-butene-styrene copolymer (SEBS) as a central layer Adhesive tapes as base films have been proposed. However, these adhesive tapes also require the necking of the base film itself (film stretching) in order to obtain a large and uniform gap amount of element pieces required in a pickup device with image recognition even after stretching after irradiation of radiation. In some cases, partial elongation occurs due to poor force transmission), and rubber-like elasticity is lost due to deterioration of the base film due to irradiation, and the properties are still insufficient.

【0008】[0008]

【発明が解決しようとする課題】本発明は、上記の問題
点を解決した半導体ウエハ固定用粘着テープを提供する
ことを目的とする。すなわち、本発明は放射線照射後の
粘着テープにおいてゴム状弾性(柔軟性)を維持すると
同時に放射線照射による基材フィルム劣化による破断が
起こらないようにし、放射線照射後の粘着テープ延伸に
よる素子間隙の大幅で均一な拡大を行うことができる半
導体ウエハ固定用粘着テープを提供するものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer which has solved the above-mentioned problems. That is, the present invention maintains the rubber-like elasticity (flexibility) of the pressure-sensitive adhesive tape after radiation irradiation, and at the same time, prevents breakage due to deterioration of the base film due to radiation irradiation, and greatly increases the element gap by stretching the pressure-sensitive adhesive tape after radiation irradiation. An object of the present invention is to provide an adhesive tape for fixing a semiconductor wafer, which is capable of performing uniform enlargement by using.

【0009】[0009]

【課題を解決するための手段】本発明者らは、上記の目
的を達成するため鋭意研究を重ねた結果、基材フィルム
の中心層としてエチレン−メタクリル酸エステル(もし
くはアクリル酸エステル)系共重合体におけるメタアク
リル酸エステル(もしくはアクリル酸エステル)成分の
含量が特定割合のものが延伸時の素子間隙の大幅、か
つ、均一な拡大を可能にし、しかもゴム状弾性を維持す
ることを見い出し、この知見に基づき本発明をなすに至
った。
Means for Solving the Problems The present inventors have conducted intensive studies to achieve the above object, and as a result, have found that the ethylene-methacrylic acid ester (or acrylic acid ester) copolymer It has been found that when the methacrylate (or acrylate) component content in the coalesced component has a specific ratio, the element gap at the time of stretching can be greatly and uniformly expanded, and the rubber-like elasticity is maintained. The present invention has been accomplished based on the findings.

【0010】すなわち本発明は、基材フィルムの片側に
放射線硬化性粘着剤層を設けてなる半導体ウエハ固定用
粘着テープにおいて、前記基材フィルムが、中心層とし
てアクリル酸エステル及び/又はメタクリル酸エステル
含有量20〜40wt%のエチレン−アクリル酸エステル
もしくはメタクリル酸エステル系共重合体フィルム層を
有し、この層に対し接着層を介して、または直接、放射
線硬化性粘着剤層側に粘着剤塗布層を、他方側に転写防
止層を有する積層フィルムであることを特徴とする半導
体ウエハ固定用粘着テープを提供するものである。本発
明において放射線とは、紫外線のような光線、又は電子
線などの電離性放射線を言う。
That is, the present invention provides an adhesive tape for fixing a semiconductor wafer having a radiation-curable adhesive layer provided on one side of a substrate film, wherein the substrate film has an acrylic acid ester and / or methacrylic acid ester as a central layer. It has an ethylene-acrylate or methacrylate-based copolymer film layer with a content of 20 to 40% by weight, and an adhesive is applied to this layer via the adhesive layer or directly to the radiation-curable adhesive layer side The present invention provides an adhesive tape for fixing a semiconductor wafer, wherein the layer is a laminated film having a transfer prevention layer on the other side. In the present invention, radiation refers to ionizing radiation such as light rays such as ultraviolet rays or electron beams.

【0011】本発明におけるエチレン−アクリル酸エス
テルもしくはメタクリル酸エステル系共重合体(本明細
書中、メタクリル酸エステル及びアクリル酸エステルの
両者を含めて、(メタ)アクリル酸エステルという。)
としては、(メタ)アクリル酸エステル含有量20wt%
以上40wt%以下の、エチレン−アクリル酸メチル系共
重合体、エチレン−アクリル酸エチル共重合体、エチレ
ン−アクリル酸2エチルヘキシルアクリラート共重合
体、エチレン−アクリル酸グリシジル共重合体、エチレ
ン−アクリル酸2ヒドロキシエチルアクリラート共重合
体、また上記のアクリル酸をメタクリル酸に代えたも
の、上記共重合体に必要に応じてカルボキシル基などの
官能基を含む無水マレイン酸などの低分子を付加または
置換し変性した変性体等、それ自体は従来公知のもの、
あるいはこれらの混合物等が用いられ、基材フィルムの
要求特性、コストなどの諸事情に応じて樹脂の種類、混
合比率を任意に選択することができる。
[0011] The ethylene-acrylate or methacrylate copolymer of the present invention (in the present specification, the term "(meth) acrylate" includes both methacrylate and acrylate).
As (meth) acrylate content 20wt%
Not less than 40% by weight of ethylene-methyl acrylate copolymer, ethylene-ethyl acrylate copolymer, ethylene-ethyl 2-ethylhexyl acrylate copolymer, ethylene-glycidyl acrylate copolymer, ethylene-acrylic acid 2-hydroxyethyl acrylate copolymer, or a product obtained by replacing the above acrylic acid with methacrylic acid, or adding or substituting a low molecule such as maleic anhydride containing a functional group such as a carboxyl group to the above copolymer as required. Per se, such as modified denatured products,
Alternatively, a mixture or the like of these may be used, and the type and mixing ratio of the resin may be arbitrarily selected according to various conditions such as required characteristics of the base film and cost.

【0012】本発明のエチレン−(メタ)アクリル酸エ
ステル系共重合体において、(メタ)アクリル酸エステ
ル含有量を20wt%以上40wt%以下とする。これは、
20wt%未満では、該共重合体のゴム状弾性が弱まり、
ネッキングを起こし易くなって均一に延伸することがで
きなくなり、その結果、素子間隙が広がらず、また40
wt%を越えると、ゴム弾性は強まるが、引張強度が低下
し、延伸時に破断し易くなるためである。またエチレン
−(メタ)アクリル酸共重合体、エチレン−アクリル酸
エステル共重合体、さらにエチレン−メタアクリル酸エ
ステル共重合体となるに従い、延伸時に破断し難くな
る。
In the ethylene- (meth) acrylate-based copolymer of the present invention, the content of the (meth) acrylate is from 20% by weight to 40% by weight. this is,
If the content is less than 20% by weight, the rubber-like elasticity of the copolymer is weakened,
Necking tends to occur, making it impossible to stretch uniformly. As a result, the element gap is not widened, and
If the content exceeds wt%, the rubber elasticity is increased, but the tensile strength is reduced, and it is easy to break during stretching. Further, as the ethylene- (meth) acrylic acid copolymer, the ethylene-acrylic acid ester copolymer, and the ethylene-methacrylic acid ester copolymer become more difficult to break during stretching.

【0013】なお、本発明のエチレン−(メタ)アクリ
ル酸エステル系共重合体は、後述するブレンド組成での
相溶性、複層、積層構造での層間接着力を高めるため、
アクリル酸、メタアクリル酸、アクリロニトリル、酢酸
ビニルなどのモノマーをさらに共重合させたものでもよ
い。また、本発明における基材フィルムの中心層は、エ
チレン−(メタ)アクリル酸エステル系共重合体に他の
樹脂をブレンドした組成物からなるブレンド樹脂を用い
ることができる。
The ethylene- (meth) acrylate-based copolymer of the present invention is intended to enhance the compatibility in the blend composition described later and the interlayer adhesion in a multilayer structure or a laminated structure.
A monomer obtained by further copolymerizing a monomer such as acrylic acid, methacrylic acid, acrylonitrile, or vinyl acetate may be used. Further, for the central layer of the base film in the present invention, a blend resin composed of a composition obtained by blending another resin with an ethylene- (meth) acrylate-based copolymer can be used.

【0014】本発明のエチレン−(メタ)アクリル酸エ
ステル系共重合体とブレンドしうる樹脂は、エチレン−
(メタ)アクリル酸エステル系共重合体と相溶性があ
り、かつ放射線透過性が良好な樹脂であれば特に制限さ
れるものではない。
The resin which can be blended with the ethylene- (meth) acrylate-based copolymer of the present invention is ethylene- (meth) acrylate-based copolymer.
The resin is not particularly limited as long as it is compatible with the (meth) acrylate-based copolymer and has good radiation transmittance.

【0015】例えば、低密度ポリエチレン、直鎖低密度
ポリエチレン、ポリプロピレン、エチレン−プロピレン
共重合体、エチレン−酢酸ビニル共重合体、ポリメチル
ペンテン、エチレン−アクリル酸共重合体、アイオノマ
ー、エチレン−プロピレン−ジエン共重合体、スチレン
−イソプレン共重合体、スチレン−ブタジエン共重合
体、スチレン−エチレン−ブテン共重合体などの単独重
合体、共重合体等、それ自体は従来公知のもの、あるい
はこれらの混合物、または他の樹脂及びエラストマーと
の混合物等が挙げられ基材フィルムの要求特性、コスト
などの諸事情に応じて樹脂の種類、50wt%以下でのブ
レンド比率を任意に選択することができる。
For example, low density polyethylene, linear low density polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer, polymethylpentene, ethylene-acrylic acid copolymer, ionomer, ethylene-propylene Homopolymers such as diene copolymers, styrene-isoprene copolymers, styrene-butadiene copolymers, styrene-ethylene-butene copolymers, copolymers, etc., which are known per se, or mixtures thereof Or a mixture with another resin and an elastomer. The type of the resin and the blending ratio at 50 wt% or less can be arbitrarily selected according to the required characteristics of the base film, cost and other circumstances.

【0016】なお、粘着剤塗布層、転写防止層との接着
性に優れた樹脂をブレンドすると粘着テープを延伸した
時、層間剥離を起こし難いので好ましい。本発明の樹脂
を調製するために混合手段としては、加熱ロール、バン
バリーミキサー等が一般に採用される。以上のような混
合手段を用いると混合が容易であるとともに確実である
ので得られた基材フィルムは折り曲げても白化現象はな
いという効果も有している。
It is preferable to blend a resin having excellent adhesiveness with the pressure-sensitive adhesive coating layer and the transfer prevention layer, since delamination hardly occurs when the pressure-sensitive adhesive tape is stretched. As a mixing means for preparing the resin of the present invention, a heating roll, a Banbury mixer and the like are generally adopted. The use of the mixing means as described above makes mixing easy and reliable, so that the obtained base film also has the effect that there is no whitening phenomenon even when bent.

【0017】また本発明において中心層となるエチレン
−(メタ)アクリル酸エステル系共重合体フィルムは他
の樹脂からなるフィルムとの複層フィルムとして用いる
ことができる。
In the present invention, the ethylene- (meth) acrylate copolymer film serving as the center layer can be used as a multilayer film with a film made of another resin.

【0018】複層とするためのフィルムは、例えば、エ
チレン−(メタ)アクリル酸エステル系共重合体と相溶
性のある樹脂、相溶し難いが要求を満たす樹脂等従来公
知のもの、あるいはこれらの混合物、または他の樹脂及
びエラストマーとの混合物等からなるもので基材フィル
ムの要求特性、コストなどの諸事情に応じて任意に選択
される。また、このフィルムの厚みは、エチレン−(メ
タ)アクリル酸エステル系共重合体からなるフィルムの
厚み以下で任意に選択することができる。
The film for forming the multilayer may be a conventionally known resin such as a resin compatible with the ethylene- (meth) acrylate copolymer, a resin which is hardly compatible but satisfies the requirement, or Or a mixture with other resins and elastomers, etc., and is arbitrarily selected according to various conditions such as required characteristics of the base film and cost. Further, the thickness of this film can be arbitrarily selected to be equal to or less than the thickness of the film made of the ethylene- (meth) acrylate copolymer.

【0019】特に、(メタ)アクリル酸エステル系共重
合体、粘着剤塗布層あるいは転写防止層との接着性の優
れた樹脂からなるフィルムを用いて複層フィルムとする
と、これを中心層として用いた粘着テープは延伸した時
に層間剥離を起こし難いので好ましい。
In particular, when a multilayer film is formed using a film made of a resin having excellent adhesion to a (meth) acrylate-based copolymer, a pressure-sensitive adhesive applied layer or a transfer prevention layer, this is used as a central layer. The pressure-sensitive adhesive tape is preferable because it does not easily cause delamination when stretched.

【0020】この複層フィルムの製法としては、従来公
知の共押出法、ラミネート法などが用いられ、この際通
常のラミネートフィルムの製造で通常行われているよう
に、複層フィルム間に接着剤を塗布してもよい。このよ
うな接着剤としては、エチレン−酢酸ビニル共重合体ま
たはこれをマレイン酸変性したもの等、従来公知の接着
剤を使用することができる。
As a method for producing the multilayer film, a conventionally known coextrusion method, laminating method, or the like is used. At this time, as is usually performed in the production of a normal laminated film, an adhesive between the multilayer films is used. May be applied. As such an adhesive, a conventionally known adhesive such as an ethylene-vinyl acetate copolymer or a maleic acid-modified ethylene-vinyl acetate copolymer can be used.

【0021】本発明において放射線硬化性粘着剤を塗布
する側の粘着剤塗布層用の樹脂としては、放射線透過性
で、Siウエハを汚染し難く、放射線硬化性粘着剤との
粘着力が大きいもの、例えばエチレン系のものが好まし
く、低密度ポリエチレン、直鎖低密度ポリエチレン、エ
チレン−酢酸ビニル共重合体、エチレン−メタアクリル
酸共重合体、エチレン−アクリル酸共重合体等、従来公
知のもの、あるいはこれらの混合物等が挙げられ、用い
られる放射線硬化性粘着剤との接着性によって任意に選
択することができる。この粘着剤塗布層は、粘着剤と基
材フィルムとの接着を強固にするための役割を果し、ウ
エハ加工後の粘着テープ延伸時に粘着剤の基材フィルム
からの剥離による半導体ウエハの汚染防止に寄与する。
In the present invention, the resin for the pressure-sensitive adhesive coating layer on the side on which the radiation-curable pressure-sensitive adhesive is applied is a resin that is radiation-transmissive, does not easily contaminate the Si wafer, and has a large adhesive force with the radiation-curable pressure-sensitive adhesive. For example, preferably ethylene-based, low density polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene-acrylic acid copolymer, and conventionally known ones, Alternatively, a mixture of these and the like can be mentioned, and it can be arbitrarily selected depending on the adhesiveness to the radiation-curable pressure-sensitive adhesive to be used. This pressure-sensitive adhesive coating layer serves to strengthen the adhesion between the pressure-sensitive adhesive and the substrate film, and prevents contamination of the semiconductor wafer due to peeling of the pressure-sensitive adhesive from the substrate film when the pressure-sensitive adhesive tape is stretched after wafer processing. To contribute.

【0022】本発明の転写防止層用の樹脂としては、例
えばエチレン系のものが好ましく、低密度ポリエチレ
ン、直鎖低密度ポリエチレン、エチレン−酢酸ビニル共
重合体、エチレン−メタアクリル酸共重合体、エチレン
−アクリル酸共重合体等、従来公知のもの、あるいはこ
れらの混合物等が挙げられる。この転写防止層は、粘着
テープの伸び特性を妨げず、基材フィルムのブロッキン
グを防止するためのものである。
As the resin for the transfer prevention layer of the present invention, for example, ethylene resins are preferable, and low-density polyethylene, linear low-density polyethylene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, Examples thereof include conventionally known ones such as an ethylene-acrylic acid copolymer, and mixtures thereof. This anti-transfer layer does not hinder the elongation characteristics of the pressure-sensitive adhesive tape and is intended to prevent blocking of the base film.

【0023】なお、粘着テープ延伸時の粘着テープと治
具との摩擦を減少し、基材フィルムのネッキングを防止
するために転写防止層として低密度ポリエチレン、エチ
レン−酢酸ビニル共重合体、さらにエチレン−酢酸ビニ
ル共重合体は酢酸ビニル含量が5wt%以下のエチレン−
酢酸ビニル共重合体を用いることが好ましい。
In order to reduce friction between the adhesive tape and the jig during stretching of the adhesive tape and prevent necking of the base film, a low-density polyethylene, an ethylene-vinyl acetate copolymer, and -The vinyl acetate copolymer is ethylene having a vinyl acetate content of 5 wt% or less.
It is preferable to use a vinyl acetate copolymer.

【0024】中心層と粘着剤塗布層又は転写防止層とを
積層する方法としては共押出法、熱融着又は接着剤によ
るラミネート法など公知の方法が用いられる。接着剤を
用いて積層する場合の接着剤としては、エチレン−酢酸
ビニル共重合体、これをマレイン酸変性したもの、マレ
イン酸変性エチレン−α−オレフィン共重合体、共重合
ポリエステル系樹脂等従来公知の接着性化合物、又はこ
れらの混合物等を用いることができる。
As a method for laminating the center layer and the pressure-sensitive adhesive applied layer or the transfer preventing layer, a known method such as a co-extrusion method, a heat fusion method or a lamination method using an adhesive is used. Examples of the adhesive in the case of laminating using an adhesive include an ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-vinyl acetate copolymer, a maleic acid-modified ethylene-α-olefin copolymer, a copolymerized polyester resin, and the like. Adhesive compounds, or mixtures thereof.

【0025】なお、接着剤として用いるエチレン−酢酸
ビニル共重合体、またはこの共重合体のマレイン酸変性
体は酢酸ビニル含量が20wt%以上のものが接着力が大
きく層間剥離を起こし難いので好ましい。
The ethylene-vinyl acetate copolymer used as the adhesive or the maleic acid-modified copolymer of this copolymer is preferably one having a vinyl acetate content of 20% by weight or more, since it has a large adhesive strength and hardly causes delamination.

【0026】基材フィルムの厚みは、強伸度特性、放射
線透過性の観点から通常30〜300μmが適当であ
る。基材フィルムの中心層の厚さ比率は、基材フィルム
の要求特性に応じて任意に設定されるが、通常基材フィ
ルムの総厚に対して30%以上が好ましく、50〜90
%がより好ましい。また、粘着剤塗布層及び転写防止層
の厚みは、基材フィルムのカールを防止するため、両層
ほぼ同じ厚みとすることが好ましい。
The thickness of the base film is usually suitably from 30 to 300 μm from the viewpoints of strong elongation characteristics and radiation transparency. The thickness ratio of the center layer of the base film is arbitrarily set according to the required characteristics of the base film, but is usually preferably 30% or more with respect to the total thickness of the base film, and 50 to 90%.
% Is more preferred. Further, the thickness of the pressure-sensitive adhesive applied layer and the thickness of the transfer prevention layer are preferably substantially the same in order to prevent curling of the base film.

【0027】なお、基材フィルムの転写防止層側表面を
シボ加工もしくは滑剤コーティングすると、ブロッキン
グ防止、粘着テープ延伸時の粘着テープと治具との摩擦
を減少する事による基材フィルムのネッキング防止など
の効果があるので好ましい。
When the surface of the base material film on the side of the anti-transfer layer is textured or coated with a lubricant, blocking is prevented, and necking of the base film is prevented by reducing friction between the adhesive tape and the jig when the adhesive tape is stretched. This is preferable because it has the effect of

【0028】放射線硬化性粘着剤としては、特に制限は
なく通常の粘着剤が用いられるがアクリル系粘着剤10
0重量部に対し炭素−炭素二重結合を有するシアヌレー
ト化合物及びイソシアヌレート化合物の群から選ばれた
少なくとも一種の化合物10〜200重量部と炭素−炭
素二重結合を二個有する直鎖状のポリエステルまたはポ
リオール系ウレタンアクリレート化合物5〜100重量
部とを含有する粘着剤を用いると、放射線照射後の粘着
剤層のゴム状弾性を維持することができるため、放射線
照射後における粘着テープのゴム状弾性(柔軟性)を維
持する効果が特に大きい。
The radiation-curable pressure-sensitive adhesive is not particularly limited, and a normal pressure-sensitive adhesive can be used.
A linear polyester having 10 to 200 parts by weight of at least one compound selected from the group consisting of a cyanurate compound and a isocyanurate compound having a carbon-carbon double bond and two carbon-carbon double bonds with respect to 0 part by weight; Alternatively, when a pressure-sensitive adhesive containing 5 to 100 parts by weight of a polyol urethane acrylate compound is used, the rubber-like elasticity of the pressure-sensitive adhesive tape after irradiation can be maintained because the rubber-like elasticity of the pressure-sensitive adhesive layer after irradiation can be maintained. The effect of maintaining (flexibility) is particularly large.

【0029】なお、本発明の半導体ウエハ固定用粘着テ
ープを紫外線照射によって硬化させる場合には、光重合
開始剤、例えばイソプロピルベンゾインエーテル、イソ
ブチルベンゾインエーテル、ベンゾフェノン、ミヒラー
ズケトン、クロロチオキサントン、ドデシルチオキサン
トン、ジメチルチオキサントン、ジエチルチオキサント
ン、ベンジルジメチルケタール、α−ヒドロキシシクロ
ヘキシルフェニルケトン、2−ヒドロキシメチルフェニ
ルプロパン等を粘着剤層に添加すると硬化反応時間また
は紫外線照射量が少なくても効率よく硬化反応を進行さ
せ、素子固定粘着力を低下させることができる。
When the adhesive tape for fixing a semiconductor wafer of the present invention is cured by ultraviolet irradiation, a photopolymerization initiator such as isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone is used. , Diethylthioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, etc. added to the pressure-sensitive adhesive layer allows the curing reaction to proceed efficiently even if the curing reaction time or the amount of ultraviolet irradiation is small, and the element is fixed. Adhesive strength can be reduced.

【0030】さらに必要に応じて放射線照射後の素子固
定粘着力を良好に低下させるため放射線硬化性のシリコ
ンアクリレート又はシリコンメタアクリレートあるいは
被着体である半導体ウエハの表面に金属物質のコーティ
ングされている特殊処理面に対しても同様に素子固定粘
着力を低下させるため、イオン封鎖剤等を、またタッキ
ファイアー、粘着調整剤、界面活性剤など、あるいはそ
の他の改質剤及び慣用成分を配合することができる。こ
の放射線硬化性粘着剤層の厚さは通常2〜50μmとす
る。
Further, if necessary, the surface of a radiation-curable silicon acrylate or silicon methacrylate or a semiconductor wafer as an adherend is coated with a metal substance in order to reduce the adhesive strength for fixing the element after irradiation with radiation. In order to similarly reduce the adhesive strength for fixing the element to the specially treated surface, an ion sequestering agent, etc., and a tackifier, an adhesion regulator, a surfactant, etc., or other modifiers and common components should be blended. Can be. The thickness of the radiation-curable pressure-sensitive adhesive layer is usually 2 to 50 μm.

【0031】[0031]

【実施例】次に本発明を実施例に基づきさらに詳細に説
明する。なお、以下の実施例で各特性は次のように試験
し、評価した。
Next, the present invention will be described in more detail with reference to examples. In the following examples, each characteristic was tested and evaluated as follows.

【0032】1)粘着力(g/25mm) 素子固定粘着力の照射前の大きさと照射後の低下の程度
を調べた。作成した放射線硬化性粘着テープに直径5イ
ンチの大きさのSiウエハを被着体とし、JIS−Z0
237に基づき紫外線照射前後の粘着力を測定した(9
0°剥離、剥離速度50mm/min)。この際、粘着テープ
に貼合するウエハの表面状態は、鏡面状態とした。
1) Adhesive Force (g / 25 mm) The magnitude of the element-fixed adhesive force before irradiation and the degree of decrease after irradiation were examined. A 5-inch diameter Si wafer was used as an adherend on the radiation-curable pressure-sensitive adhesive tape thus prepared, and JIS-Z0
The adhesive force before and after ultraviolet irradiation was measured based on 237 (9).
0 ° peeling, peeling speed 50 mm / min). At this time, the surface state of the wafer bonded to the adhesive tape was a mirror surface state.

【0033】2)素子間隙(μm) 粘着テープ延伸時の素子間隙の大きさと縦方向/横方向
の均一性の程度を調べた。作成した放射線硬化性粘着テ
ープに固定した直径5インチのSiウエハをダイシンン
グソーで3×3mm、6×6mmと2種類の大きさにフ
ルカットし、紫外線硬化後、ウエハ拡張装置(エアー圧
2.0kg/cm )にてエキスパンドストロークを10mm
上昇させて延伸した際の縦方向、横方向の素子間隙量を
測定し、素子間隙の大きさ、均一性をみた。ここで素子
間隙量は、ダイシング時のブレード厚さ40μmを含
む。
2) Element gap (μm) The size of the element gap and the degree of uniformity in the longitudinal / lateral directions when the adhesive tape was stretched were examined. A 5-inch diameter Si wafer fixed to the prepared radiation-curable adhesive tape is fully cut into two sizes of 3 × 3 mm and 6 × 6 mm using a dicing saw, and after ultraviolet curing, a wafer expanding device (air pressure 2) 0.0kg / cm) with an expanded stroke of 10mm
The vertical and horizontal device gap amounts when the film was raised and stretched were measured to determine the size and uniformity of the device gap. Here, the element gap amount includes a blade thickness of 40 μm at the time of dicing.

【0034】3)粘着テープのエキスパンド時の強度 エキスパンドストローク30mm時のテープの状態を調
べた。前記2)の方法と同様な方法で3×3mmの大き
さにフルカットし、エキスパンドストロークを30mm
上昇させて延伸した際の粘着テープが破断しているかど
うかの状態をみた。
3) Strength of Expanded Adhesive Tape The state of the tape at an expand stroke of 30 mm was examined. Full cut into a size of 3 × 3 mm in the same manner as in the method 2), and the expand stroke is 30 mm.
The state of whether or not the pressure-sensitive adhesive tape when it was raised and stretched was broken was examined.

【0035】実施例1〜6及び比較例1〜4 表1及び表2に示したような各層構成の基材フィルムを
押出機を使用して下記樹脂A〜G単体またはニーダー練
りブレンド組成物などを用いて(共)押出加工により作
成した。得られた基材フィルム(粘着剤塗布層、中心
層、転写防止層からなる)の厚みはすべて100μであ
る。得られた基材フィルムの粘着剤塗布層側にコロナ処
理をして、乾燥後の粘着後の粘着剤層の厚さが10μm
となるように粘着剤を塗布し、放射線硬化性粘着テープ
を作成した。
Examples 1 to 6 and Comparative Examples 1 to 4 The base films having the respective layers shown in Tables 1 and 2 were extruded by using an extruder to prepare the following resins A to G alone or a kneaded kneaded blend composition. By using (co) extrusion processing. The thickness of each of the obtained base films (consisting of the pressure-sensitive adhesive applied layer, the center layer, and the transfer prevention layer) is 100 μm. The obtained base film is subjected to a corona treatment on the side of the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer after drying has a thickness of 10 μm.
An adhesive was applied so as to obtain a radiation-curable adhesive tape.

【0036】使用した樹脂、粘着剤を下記に示す。 樹脂A(エチレン−アクリル酸メチル共重合体 アクリ
ル酸メチル含有量20wt%):三菱油化製 ユカロンE
MA XG500M 樹脂B(エチレン−アクリル酸エチル共重合体 アクリ
ル酸メチル含有量25wt%):日本石油製 日石レクス
ロンEEA A4250 樹脂C(エチレン−メタアクリル酸エチル共重合体 メ
タアクリル酸エチル含有量38wt%):住友化学製 ア
クリフト CM4011 樹脂D(エチレン−メタアクリル酸エチル共重合体 ア
クリル酸エチル含有量10wt%):住友化学製 アクリ
フト WD201 樹脂E(エチレン−アクリル酸エチル共重合体 アクリ
ル酸エチル含有量41wt%):日本ユニカー製 NUC
コポリマーEEA MB−870 樹脂F(エチレン−メタアクリル酸共重合体 メタアク
リル酸含有量20wt%):ダウケミカル製 プリマコー
ル 5980 樹脂G(1,2−ポリブタジエン):日本合成ゴム製
RB 805 EPR(エチレン−プロピレン−ジエン共重合体):日
本合成ゴム製 EP 51 EVA−10(エチレン−酢酸ビニル共重合体(酢酸ビ
ニル含量10wt%)):住友化学工業製 エバテート H
2021F EVA−3(エチレン−酢酸ビニル共重合体(酢酸ビニ
ル含量3wt%)):三菱油化製 ユカロン−エバ V1
13K LLDPE(低密度ポリエチレン):東ソー製 ペトロ
セン 205 粘着剤A:アクリル系粘着剤 100重量部 イソシアヌレート化合物 80重量部 ウレタンアクリレート化合物 20重量部 光重合開始剤 1重量部 粘着剤B:アクリル系粘着剤 100重量部 シアヌレート化合物 40重量部 ウレタンアクリレート化合物 10重量部
The resins and pressure-sensitive adhesives used are shown below. Resin A (ethylene-methyl acrylate copolymer, methyl acrylate content: 20 wt%): Yucalon E manufactured by Mitsubishi Yuka
MA XG500M Resin B (ethylene-ethyl acrylate copolymer methyl acrylate content 25 wt%): Nippon Oil Co., Ltd. Nisseki Lexlon EEA A4250 Resin C (ethylene-ethyl methacrylate copolymer ethyl methacrylate content 38 wt% ): Sumitomo Chemical's ACLIFT CM4011 Resin D (ethylene-ethyl methacrylate copolymer ethyl acrylate content 10 wt%): Sumitomo Chemical's ACLIFT WD201 resin E (ethylene-ethyl acrylate copolymer ethyl acrylate content 41 wt%) %): NUC manufactured by Nippon Unicar
Copolymer EEA MB-870 Resin F (ethylene-methacrylic acid copolymer, methacrylic acid content 20 wt%): Dow Chemical Primacol 5980 Resin G (1,2-polybutadiene): Japan Synthetic Rubber
RB805 EPR (ethylene-propylene-diene copolymer): EP 51 EVA-10 (ethylene-vinyl acetate copolymer (vinyl acetate content: 10 wt%) manufactured by Nippon Synthetic Rubber): Evatate H manufactured by Sumitomo Chemical Co., Ltd.
2021F EVA-3 (ethylene-vinyl acetate copolymer (vinyl acetate content: 3 wt%)): Yucalon-Eva V1 manufactured by Mitsubishi Yuka
13K LLDPE (low-density polyethylene): Petrocene 205 manufactured by Tosoh Co., Ltd. A: Acrylic adhesive 100 parts by weight Isocyanurate compound 80 parts by weight Urethane acrylate compound 20 parts by weight Photopolymerization initiator 1 part by weight Adhesive B: Acrylic adhesive 100 parts by weight Cyanurate compound 40 parts by weight Urethane acrylate compound 10 parts by weight

【0037】[0037]

【表1】 [Table 1]

【0038】[0038]

【表2】 [Table 2]

【0039】[0039]

【発明の効果】本発明の半導体固定用粘着テープを半導
体ウエハ等の切断加工に用いた場合、放射線照射後でも
粘着テープがゴム状弾性(柔軟性)を維持し延伸性が優
れていると同時に放射線照射による基材フィルム劣化に
よる破断が起こらないため粘着テープによる素子間隙の
大幅で均一な拡大が可能となるので、素子小片の画像認
識が容易となる。よって、素子を容易にしかも損傷する
ことなく、ピックアップすることができるという優れた
効果を奏する。
When the adhesive tape for fixing a semiconductor of the present invention is used for cutting semiconductor wafers or the like, the adhesive tape maintains rubber-like elasticity (flexibility) even after irradiation, and has excellent stretchability. Since breakage due to deterioration of the base film due to irradiation does not occur, the gap between the elements can be greatly and uniformly enlarged by the adhesive tape, so that the image recognition of the element pieces becomes easy. Therefore, there is an excellent effect that the element can be picked up easily and without damage.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 石渡 伸一 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (72)発明者 岩本 和繁 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (72)発明者 長谷部 守邦 東京都千代田区丸の内2丁目6番1号 古河電気工業株式会社内 (58)調査した分野(Int.Cl.6,DB名) C09J 7/02 H01L 21/301 WPI/L(QUESTEL)──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shinichi Ishiwatari 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Inside Furukawa Electric Co., Ltd. (72) Inventor Kazushige Iwamoto 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (72) Inventor Morikuni Hasebe 2-6-1 Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. (58) Fields investigated (Int. Cl. 6 , DB name) C09J 7 / 02 H01L 21/301 WPI / L (QUESTEL)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基材フィルムの片側に放射線硬化性粘着
剤層を設けてなる半導体ウエハ固定用粘着テープにおい
て、前記基材フィルムが、中心層としてアクリル酸エス
テル及び/又はメタクリル酸エステル含有量20〜40
wt%のエチレン−アクリル酸エステルもしくはメタクリ
ル酸エステル系共重合体フィルム層を有し、この層に対
し接着層を介して、または直接、放射線硬化性粘着剤層
側に粘着剤塗布層を、他方側に転写防止層を有する積層
フィルムであることを特徴とする半導体ウエハ固定用粘
着テープ。
In a pressure-sensitive adhesive tape for fixing a semiconductor wafer having a radiation-curable pressure-sensitive adhesive layer provided on one side of a substrate film, the substrate film has an acrylic ester and / or methacrylic ester content of 20 as a central layer. ~ 40
It has a wt.% ethylene-acrylate or methacrylate-based copolymer film layer, and an adhesive coating layer on the radiation-curable pressure-sensitive adhesive layer side via an adhesive layer or directly on this layer, and An adhesive tape for fixing a semiconductor wafer, which is a laminated film having a transfer prevention layer on the side.
JP28038491A 1991-10-02 1991-10-02 Adhesive tape for fixing semiconductor wafers Expired - Fee Related JP2983721B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28038491A JP2983721B2 (en) 1991-10-02 1991-10-02 Adhesive tape for fixing semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28038491A JP2983721B2 (en) 1991-10-02 1991-10-02 Adhesive tape for fixing semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH0598220A JPH0598220A (en) 1993-04-20
JP2983721B2 true JP2983721B2 (en) 1999-11-29

Family

ID=17624274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28038491A Expired - Fee Related JP2983721B2 (en) 1991-10-02 1991-10-02 Adhesive tape for fixing semiconductor wafers

Country Status (1)

Country Link
JP (1) JP2983721B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4609852B2 (en) * 2005-09-22 2011-01-12 古河電気工業株式会社 Adhesive tape for semiconductor wafer dicing
JP5321834B2 (en) * 2009-10-15 2013-10-23 アキレス株式会社 Base film for adhesive tape
KR101682726B1 (en) 2009-10-15 2016-12-12 아키레스 가부시키가이샤 Base film of tape for process of semiconductor production
JP6472972B2 (en) * 2013-10-23 2019-02-20 三井・デュポンポリケミカル株式会社 Resin composition for dicing tape substrate and dicing tape substrate
JP6482818B2 (en) * 2013-10-23 2019-03-13 リンテック株式会社 Dicing sheet

Also Published As

Publication number Publication date
JPH0598220A (en) 1993-04-20

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