JP2945666B1 - Probe card - Google Patents

Abstract

An object of the present invention is to manufacture a semiconductor integrated circuit at a lower cost than that used for measuring electrical characteristics of a semiconductor integrated circuit in which the arrangement pattern of bonding pads has become more complicated. [Constitution] A peripheral bonding pad 810 is provided in a peripheral portion,
A probe card for measuring various electrical characteristics of a semiconductor integrated circuit 800 as a measurement object having a central bonding pad 820 formed at a central portion, wherein the horizontal probe 100 is in contact with a peripheral bonding pad 810
A first substrate 300 on which the horizontal probe 100 is mounted, a vertical probe 200 in contact with the central bonding pad 820, a second substrate 600 on which the vertical probe 200 is mounted, and a second substrate 600. Interval adjustment mechanism 7 for adjusting the interval between first substrate 300
50.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card used for measuring various electric characteristics of a semiconductor integrated circuit such as an LSI chip as an object to be measured.

[0002]

2. Description of the Related Art Conventional probe cards are roughly classified into a horizontal type called a cantilever type and a vertical type called a vertical type. The former horizontal type probe card is excellent in many respects, but is not suitable for simultaneous multi-chip measurement due to recent high integration of LSI chips and multiplexing of testers. In contrast, a vertical probe card requires more probes (hundreds to thousands).
It is suitable for multi-chip simultaneous measurement because it can be used and the degree of freedom of probe arrangement is high.

In a horizontal type probe card,
It has the merit that it can be provided at low cost because assembly and manufacture are relatively easy.However, since a large number of horizontal probes are arranged in a horizontal direction, electrodes are arranged in a complicated pattern, It is not suitable for a large-sized probe card for measuring a circuit or a large number of semiconductor integrated circuits simultaneously.

On the other hand, a vertical probe card has a large size such that a semiconductor integrated circuit in which electrodes are arranged in a complicated pattern, a complicated semiconductor integrated circuit, or a large number of semiconductor integrated circuits are simultaneously measured. Suitable for probe cards. However, each of the components used in the vertical probe card requires higher accuracy and is difficult to assemble. Therefore, there is a problem that the manufacturing cost is higher than that of the horizontal probe card.

[0005]

By the way, recently, as the integration density and the density of a semiconductor integrated circuit increase, the arrangement pattern of electrodes becomes more complicated. For example, an electrode (referred to as a bonding pad in this type of semiconductor integrated circuit) has been frequently arranged not only in a peripheral portion of the semiconductor integrated circuit but also in a central portion thereof.

[0006] Such a semiconductor integrated circuit cannot be handled by a conventional horizontal probe card, and is currently supported by a vertical probe card. Therefore, an expensive vertical probe card has generally been used for a recent semiconductor integrated circuit in which the arrangement pattern of bonding pads is further complicated.

The present invention has been made in view of the above circumstances, and provides a cheaper probe card used for measuring electrical characteristics of a semiconductor integrated circuit in which the arrangement pattern of bonding pads has become more complicated in recent years. It is intended to be.

[0008]

According to a first aspect of the present invention, there is provided a probe card for measuring various electrical characteristics of an object to be measured having a bonding pad formed at a peripheral portion and a central portion. And a vertical probe that contacts the central bonding pad.

Further, the probe card according to claim 2 is
What is claimed is: 1. A probe card for measuring various electrical characteristics of a measurement object having bonding pads formed at a peripheral portion and a central portion, comprising: a horizontal probe contacting a peripheral bonding pad; and a first probe to which the horizontal probe is attached. , A vertical probe that contacts a bonding pad in the center, and a second substrate to which the vertical probe is attached, wherein the second substrate is provided above the first substrate. ing.

[0010] It is preferable that the apparatus further comprises an interval adjusting mechanism for adjusting an interval between the second substrate and the first substrate.

[0011]

FIG. 1 is a schematic sectional view of a probe card according to an embodiment of the present invention, FIG. 2 is a schematic sectional view of a main part of the probe card according to an embodiment of the present invention, and FIG.
FIG. 3 is a schematic perspective view of a support member used for the probe card according to the embodiment of the present invention.

The probe card according to the embodiment of the present invention has a peripheral bonding pad 810 formed in a peripheral portion and a central bonding pad 820 formed in a central portion. Probe for measuring various characteristics, the horizontal probe 1 contacting the peripheral bonding pad 810
00 and a vertical probe 200 that contacts the central bonding pad 820.

First, as shown in FIG. 1, a semiconductor integrated circuit 800 as a measurement object has a plurality of peripheral bonding pads 810 formed along an outer peripheral edge and a plurality of peripheral bonding pads 810 at a central portion inside the peripheral bonding pads 810. The central bonding pads 820 are randomly formed. The semiconductor integrated circuit 800 measures various electrical characteristics in a state of the wafer 850.

The horizontal probe 100 is made of tungsten or a tungsten alloy containing about 3% of rhenium. The horizontal probe 100 has a contact portion 110 at the tip and a main body 120 connected to the contact portion 110. Since the contact portion 110 is a portion that contacts the peripheral bonding pad 810, it is sharpened. The contact portion 110 is bent from the main body 120 so as to contact the peripheral bonding pad 810 at substantially right angles.

On the other hand, the vertical probe 200 is made of tungsten or a tungsten alloy containing about 3% rhenium. The vertical probe 200 is a portion where the contact portion 210 at the tip contacts the central bonding pad 820 of the semiconductor integrated circuit 800. Therefore, the tip of the contact portion 210 is polished and sharpened.

A substantially laterally U-shaped buckling part 220 is formed in the middle part of the vertical probe 200. The buckling portion 220 is buckled and deformed by applying overdrive (applying further pressure even after the contact portion at the tip of the probe comes into contact with the bonding pad), and the contact pressure to the central bonding pad 820 is reduced. This is a part for setting a predetermined value.

The first substrate 300 has an opening 310 substantially at the center thereof, where the semiconductor integrated circuit 800 to be measured can be viewed.
Has been established. The first substrate 300 is a laminated substrate, and a wiring pattern is formed on each layer. The wiring pattern 320 formed on the upper surface of the first substrate 300 is connected to the first substrate 3 through the through hole 330.
00 is exposed on the lower surface. In the lower surface portion, the connection portion 130 on the base end side of the horizontal probe 100 is
Connected to 0.

An opening 3 is provided on the lower surface of the first substrate 300.
A substantially ring-shaped inclining member 400 is attached so as to surround 10. The inclined member 400 has a tapered surface 410 whose lower end surface is inclined downward toward the inside.
The inclined member 400 is a portion to which the middle part of the main body 120 of the horizontal probe 100 is attached with an adhesive 420 such as an epoxy resin. Therefore, when the contact portion 110 is in a predetermined position, that is, the peripheral bonding
When it is attached to the inclined member 400 so as to be in a position to come into contact with 10, the connecting portion 130 at the rear end comes to face the through hole 330. The connecting portion 130 of the horizontal probe 100 is connected to the wiring pattern 320 by soldering.

A guide plate 500 for positioning the tip of the vertical probe 200 is mounted inside the inclined member 400. The guide plate 500 has a plurality of through holes 510 corresponding to the central bonding pads 820.

On the other hand, the second substrate 600 has a wiring pattern 610 formed on the back surface side. By inserting the connection portion 230 at the rear end of the vertical probe 200 into the through hole 620 of the second substrate 600 and soldering the same, the electrical and structural aspects of the vertical probe 200 to the second substrate 600 are improved. Make a connection. The wiring pattern 610 is formed up to the end of the second substrate 600 as shown in FIG. The second substrate 600 is provided with a hole 630 to which a tip of a height adjusting screw 751 constituting a space adjusting mechanism 750 described later is attached. This hole 630
Does not screw the height adjustment screw 751
1 is idle.

The second substrate 600 includes the first substrate 30
0 by the pair of support members 700 erected at the first position.
To be parallel to the substrate 300. That is, as shown in FIG. 3, the support member 700 is a plate-like member, and has a groove 710 that is larger than the thickness of the second substrate 600. The pair of support members 700 are erected on the first substrate 300 at intervals substantially equal to the width of the second substrate 600 with the grooves 710 facing each other.

Further, on the upper surface of the support member 700,
Two female screws 720 connected to the groove 710 are formed. The female screw 720 and the hole 630 formed in the second substrate 600 are connected to the groove 710 by the second substrate 60.
0 is positioned on the same vertical line with the correct attachment.

Further, on the inner surface of the support member 700,
As shown in FIG. 2, a wiring pattern 730 that contacts the wiring pattern 610 is formed. When the support member 700 is erected on the first substrate 300, the wiring pattern 730 is connected to a predetermined wiring pattern 320 formed on the first substrate 300.

Next, the specification of the electrical characteristics of the semiconductor integrated circuit 800 by the probe card configured as described above will be described.

The semiconductor integrated circuit 800 is held by suction on the movable table 900 in a state of a wafer 850. By raising the movable table 900, the semiconductor integrated circuit 8
Horizontal probe 1 on the peripheral bonding pad 810
00 contacts the vertical probes 200 with the central bonding pads 820, respectively.

The contact portion 11 of each probe 100, 200
0, 210 is in contact with each of the bonding pads 810, 820 even after the overdrive (each of the probes 100, 820).
The contact portions 110 and 210 of the semiconductor integrated circuit 200
Is further applied after contacting each of the bonding pads 810 and 820).
Then, the buckling portion 220 is buckled and deformed, and the main body portion 120 of the horizontal probe 100 is bent.

When the measurement of the electrical characteristics of the semiconductor integrated circuit 800 is completed, the movable table 900 is lowered and moved in the horizontal direction, and the next measurement of the electrical characteristics of the semiconductor integrated circuit 800 is performed.

When measuring the electrical characteristics of the semiconductor integrated circuit 800, the distance between the first substrate 300 and the second substrate 600 is adjusted by the distance adjusting mechanism 750. That is, the height of the second substrate 600 can be changed by changing the degree of screwing of the height adjusting screw 751 into the female screw 720, and the height of the second substrate 600 can be changed. Means a change in the height position of the contact portion 210 of the vertical probe 200. Therefore, the center adjusting pad 8 of the vertical probe 200 is
It is possible to adjust the contact pressure to 20.

In the above-described embodiment, one semiconductor integrated circuit 800 is measured. However, electrical characteristics of a plurality of semiconductor integrated circuits 800 may be measured at the same time.

[0030]

According to a first aspect of the present invention, there is provided a probe card for measuring various electrical characteristics of an object to be measured having bonding pads formed at a peripheral portion and a central portion. It has a horizontal probe that makes contact and a vertical probe that makes contact with the central bonding pad.

According to this probe card, since only the central bonding pad is a vertical probe and the other peripheral bonding pads are horizontal probes, it can be constructed at a lower cost than a conventional probe card in which all the vertical probes are vertical probes. .

Further, the probe card according to claim 2 is
What is claimed is: 1. A probe card for measuring various electrical characteristics of a measurement object having bonding pads formed at a peripheral portion and a central portion, comprising: a horizontal probe contacting a peripheral bonding pad; and a first probe to which the horizontal probe is attached. , A vertical probe that contacts a bonding pad in the center, and a second substrate to which the vertical probe is attached, wherein the second substrate is provided above the first substrate. ing.

Therefore, this probe card can be constructed at a lower cost than the conventional probe card in which all conventional vertical probes are used, and the vertical probe and the horizontal probe are not formed on one substrate. There is an advantage that the production can be performed separately.

Further, in the probe card according to the third aspect, an interval adjusting mechanism for adjusting the interval between the second substrate and the first substrate is provided.

Therefore, when measuring the electric characteristics of the semiconductor integrated circuit, the distance between the first substrate and the second substrate is adjusted by the distance adjusting mechanism, so that the height position of the second substrate can be changed. That is, the height position of the vertical probe can be changed, and the contact pressure of the vertical probe to the central bonding pad can be adjusted. Therefore, even when only the second substrate and the vertical probe are exchanged, the height position of the vertical probe can be easily adjusted, which is very convenient.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a probe card according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view of a main part of the probe card according to the embodiment of the present invention.

FIG. 3 is a schematic perspective view of a support member used for the probe card according to the embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 100 horizontal probe 200 vertical probe 300 first substrate 600 second substrate 750 interval adjustment mechanism 800 semiconductor integrated circuit 810 peripheral bonding pad 820 central bonding pad

──────────────────────────────────────────────────の Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) G01R 1/06-1/073 G01R 31/26 G01R 31/28 H01L 21/66

Claims (3)

(57) [Claims] 1. A probe card for measuring various electrical characteristics of an object to be measured having bonding pads formed at a peripheral portion and a central portion, a horizontal probe contacting a bonding pad at a peripheral portion, and a bonding pad at a central portion. And a vertical probe that comes into contact with the probe card. 2. A probe card for measuring various electrical characteristics of an object to be measured having bonding pads formed at a peripheral portion and a central portion, wherein a horizontal probe that contacts a bonding pad at a peripheral portion and the horizontal probe is attached. A first substrate, a vertical probe that comes into contact with a central bonding pad, and a second substrate to which the vertical probe is attached, wherein the second substrate is a first substrate. A probe card provided on the upper side. 3. The probe card according to claim 2, further comprising an interval adjusting mechanism for adjusting an interval between the second substrate and the first substrate.