JP2924059B2 - Semiconductor pellet mounting method and semiconductor pellet mounting apparatus - Google Patents

Semiconductor pellet mounting method and semiconductor pellet mounting apparatus

Info

Publication number
JP2924059B2
JP2924059B2 JP2079227A JP7922790A JP2924059B2 JP 2924059 B2 JP2924059 B2 JP 2924059B2 JP 2079227 A JP2079227 A JP 2079227A JP 7922790 A JP7922790 A JP 7922790A JP 2924059 B2 JP2924059 B2 JP 2924059B2
Authority
JP
Japan
Prior art keywords
solder
semiconductor pellet
chip carrier
pellet
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2079227A
Other languages
Japanese (ja)
Other versions
JPH03278548A (en
Inventor
和義 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2079227A priority Critical patent/JP2924059B2/en
Publication of JPH03278548A publication Critical patent/JPH03278548A/en
Application granted granted Critical
Publication of JP2924059B2 publication Critical patent/JP2924059B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To obtain a good mounting state without a need for an excessive area for a scrubbing operation and even at a mounting operation on a recess- shaped part having no scrubbing area by a method wherein, when a solder is melted, a continuous pulse-shaped wind pressure is exerted on a semiconductor pellet and the pellet and the molten solder are vibrated. CONSTITUTION:At a semiconductor-pellet mounting method, a chip carrier 1 is placed on a heating stage 4; a solder 5 is placed on the chip carrier 1; a semiconductor pellet 6 is placed on the solder 5; the chip carrier 1, the solder 5 and the semiconductor pellet 6 are heated up to the melting point of the solder 5; the solder 5 is melted and, after that, cooled; the semiconductor pellet 6 is brazed onto the chip carrier 1. At the mounting method, when the solder 5 is melted, a continuous pulse-shaped wind pressure is exerted on the semiconductor pellet 6, the pellet 6 and the molten solder 5 are vibrated and the semiconductor pellet 6 is brazed onto the chip carrier 1. For example, the pressure of high-pressure nitrogen heated with a gas heating device 8 is modulated to a pulse shape by using an air-pressure adjusting device 9; the nitrogen is jetted from a jet nozzle 10.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体ペレットマウント方法及び半導体ペ
レットマウント装置に関し、特に半導体ペレットに高熱
の気体を断続的に噴射して半導体ペレットを振動させる
ことによりマウントする半導体ペレットの非接触型マウ
ント方法に関する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pellet mounting method and a semiconductor pellet mounting apparatus, and more particularly to a semiconductor pellet mounting method in which a high-temperature gas is intermittently injected into a semiconductor pellet to vibrate the semiconductor pellet. The present invention relates to a non-contact mounting method of a semiconductor pellet to be mounted.

〔従来の技術〕[Conventional technology]

従来この種の半導体ペレットマウント方法は加熱台上
にチップキャリアをのせチップキャリアを使用するソル
ダーの融点温度まで加熱し、その後前記チップキャリア
上にソルダーをのせ、ソルダーが溶融した時点で半導体
ペレットをピンセットではさむかあるいはコレット等で
吸着して溶融したソルダー上でスクラブさせることによ
り、チップキャリア及び半導体ペレット裏面にソルダー
をなじませて、良好なマウント状態を作っていた。
Conventionally, this type of semiconductor pellet mounting method is to place a chip carrier on a heating table, heat to the melting point of the solder using the chip carrier, and then place the solder on the chip carrier, and when the solder is melted, tweezer the semiconductor pellet. In this case, the chip carrier and the back surface of the semiconductor pellet were soldered by scrubbing on the solder melted by being sucked or absorbed by a collet or the like, and a good mounting state was created.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

上述した従来の半導体ペレットマウント方法は、半導
体ペレットをスクラブさせる特にスクラブのための余分
なマウント領域を必要とするため混成集積回路等の高集
積化に不都合を生ずる。又、ピンセットによるスクラブ
では、スクラブ時に機械的接触が生ずるので、半導体ペ
レットのカケ,割れ等を生ずる可能性がある。又、マウ
ントしようとする半導体ペレットの厚みより深く、かつ
十分なスクラブエリアがとれないほど狭い凹部ヘマウン
トする場合、コレットではマウント不可能でありピンセ
ットでもペレットのスクラブが十分にできないため、チ
ップキャリアとソルダー又は半導体ペレット裏面とソル
ダーのなじみが不十分で良好なマウント状態が得られな
いという不都合を生ずる。
The conventional semiconductor pellet mounting method described above requires an extra mounting area for scrubbing the semiconductor pellets, especially for scrubbing, and thus causes a problem in high integration of a hybrid integrated circuit or the like. Further, in the scrub using tweezers, mechanical contact occurs at the time of scrubbing, so that there is a possibility that the semiconductor pellet may be chipped or cracked. Also, when mounting in a recess that is deeper than the thickness of the semiconductor pellet to be mounted and is so narrow that a sufficient scrub area cannot be obtained, mounting is not possible with a collet, and scrubbing of the pellet is not sufficient even with tweezers. Alternatively, the solder may not be sufficiently conformed to the back surface of the semiconductor pellet and a satisfactory mounting state may not be obtained.

〔課題を解決するための手段〕[Means for solving the problem]

本発明による半導体ペレットマウント方法は、チップ
キャリア,ソルダー及び半導体ペレットを加熱する加熱
台と半導体ペレットに気体流による圧力を与えるための
ノズル及び連続パルス状の気体流を発生させるためのパ
ルス気体流発生装置あるいは気圧調整装置を有し、パル
ス気体流発生装置あるいは気圧調整装置により連続パル
ス状に変調させた気体流をノズルより半導体ペレット上
へ噴出させ半導体ペレットを振動させながらソルダーを
溶かしてペレットをマウントする。したがって、変調さ
れた気体流の振幅が溶解したソルダーにつたわり、振動
した溶融ソルダーはチップキャリア面及び半導体チップ
裏面になじみやすくなるという利点がある。
A method for mounting a semiconductor pellet according to the present invention includes a heating table for heating a chip carrier, a solder and a semiconductor pellet, a nozzle for applying pressure to the semiconductor pellet by a gas flow, and a pulse gas flow for generating a continuous pulsed gas flow. The device has a device or air pressure adjusting device, and a gas flow modulated in a continuous pulse form by a pulse gas flow generating device or an air pressure adjusting device is ejected from the nozzle onto the semiconductor pellet, and the solder is melted while the semiconductor pellet is vibrated to mount the pellet. I do. Therefore, there is an advantage in that the modulated solder gas is easily absorbed into the chip carrier surface and the back surface of the semiconductor chip, because the amplitude of the modulated gas flow is linked to the melted solder.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.

第1図は本発明の一実施例の縦断面であり、チップキ
ャリア1として0.635mm程度のアルミナによる誘電体基
板2上に10μm程度の銀パラジウムの導体層3が形成さ
れているものを用い、チップキャリア1は加熱台4上で
約340゜程度に加熱されている。加熱されたチップキャ
リア1の導体層3上にソルダー5として厚さ30μm程度
の金−スズ合金がのせられて、その上に半導体ペレット
6をのせる。一方、高圧窒素管7には気体加熱装置8と
気圧を第1図(b)に示すようにパルス状に調整する気
圧調整装置9が接続されており、気体加熱装置8で約35
0℃に加熱した高圧窒素は気圧調整装置9により窒素噴
出圧力がパルス状に変調されて、噴出ノズル10より噴出
し、半導体ペレット6上にパルス状窒素気流があてられ
る。パルス状窒素気流は半導体ペレット6に振動を生じ
させ、その振動は溶融したソルダーに伝わる。振動した
溶融ソルダーにより前記導体層3及び半導体ペレット6
の裏面とソルダー5がなじんだ後チップキャリア1を冷
却してマウントを完了する。
FIG. 1 is a longitudinal sectional view of one embodiment of the present invention, in which a chip carrier 1 in which a conductor layer 3 of silver palladium of about 10 μm is formed on a dielectric substrate 2 of alumina of about 0.635 mm, The chip carrier 1 is heated to about 340 ° on a heating table 4. A gold-tin alloy having a thickness of about 30 μm is placed as a solder 5 on the conductor layer 3 of the heated chip carrier 1, and a semiconductor pellet 6 is placed thereon. On the other hand, a gas heating device 8 and a pressure adjusting device 9 for adjusting the pressure in a pulsed manner as shown in FIG. 1B are connected to the high-pressure nitrogen pipe 7.
The high-pressure nitrogen heated to 0 ° C. is modulated in pressure by a pressure adjusting device 9 into a pulsed nitrogen jet, and is jetted from a jet nozzle 10 to apply a pulsed nitrogen gas stream onto the semiconductor pellet 6. The pulsed nitrogen gas flow causes the semiconductor pellet 6 to vibrate, and the vibration is transmitted to the molten solder. The conductor layer 3 and the semiconductor pellet 6 are vibrated by the vibrating molten solder.
After the rear surface of the chip carrier 1 and the solder 5 are adjusted, the chip carrier 1 is cooled to complete the mounting.

第2図は、本発明の他の実施例の縦断面図である。本
実施例ではチップキャリア1として0.6mm程度の同−タ
ンタル板による金属板11に0.25mm程度のアルミナ等によ
る誘電体基板層12をろう付けしたものを用いており、半
導体ペレットマウント箇所はアルミナ基板層12がなくア
ルミナ基板層12と同−タンタル板による金属板11により
凹部13が形成されている。凹部13に0.3μm厚の金−ス
ズのソルダー5と厚さ60μm程度の半導体ペレット6を
のせ、チップキャリアごと加熱台にのせる。以下、第1
図の一実施例と同様にソルダー溶融時にパルス状に気圧
変調させた窒化気流を半導体ペレット上に噴出してソル
ダーがペレットキャリア1の銅タンタル面及び半導体ペ
レット裏面になじんだ時点でチップキャリアを冷却し、
マウントを完了する。
FIG. 2 is a longitudinal sectional view of another embodiment of the present invention. In this embodiment, a chip carrier 1 is used in which a metal plate 11 made of the same tantalum plate having a thickness of about 0.6 mm and a dielectric substrate layer 12 made of alumina or the like having a thickness of about 0.25 mm are brazed. The recess 13 is formed by the metal plate 11 made of the same tantalum plate as the alumina substrate layer 12 without the layer 12. A gold-tin solder 5 having a thickness of 0.3 μm and a semiconductor pellet 6 having a thickness of about 60 μm are placed in the recess 13, and the chip carrier is placed on a heating table. Hereinafter, the first
In the same manner as in the embodiment of the figure, a nitriding gas stream pressure-modulated in a pulsed manner at the time of melting of the solder is jetted onto the semiconductor pellet, and the chip carrier is cooled when the solder has spread to the copper tantalum surface of the pellet carrier 1 and the back surface of the semiconductor pellet. And
Complete the mount.

本実施例ではマウント部であるチップキャリア凹部13
により半導体ペレットのマウント位置出しができるとい
う利点がある。
In the present embodiment, the chip carrier concave portion 13 which is a mount portion
Accordingly, there is an advantage that the mounting position of the semiconductor pellet can be determined.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明による半導体ペレットマウ
ント方法はパルス状に気圧変調した圧力気流をマウント
する半導体ペレットに当てることにより半導体ペレット
及び溶融したソルダーに振動を発生させ、その振動によ
りチップキャリア及び半導体ペレット裏面とソルダーを
なじませてマウントすることができる。このマウント方
式ではマウント時に半導体ペレットをスクラブする必要
がないのでスクラブのための余分な面積を必要としな
い。又、ピンセット等でスクラブする場合の様にスクラ
ブ時にペレットのカケ,割れを発生させる心配がない。
又、凹状でスクラブエリアのない箇所へのマウントに際
しても良好なマウント状態を得られるという利点があ
る。
As described above, the semiconductor pellet mounting method according to the present invention generates vibrations in the semiconductor pellets and the molten solder by applying a pulsed air pressure modulated airflow to the semiconductor pellets to be mounted, and the vibrations cause the chip carrier and the semiconductor pellets. You can mount it by blending the back with the solder. In this mounting method, there is no need to scrub the semiconductor pellets at the time of mounting, so that no extra area is required for scrubbing. Further, unlike the case of scrubbing with tweezers or the like, there is no fear of causing chipping or cracking of the pellet during scrubbing.
Also, there is an advantage that a good mounting state can be obtained even when mounting is performed on a concave portion having no scrub area.

【図面の簡単な説明】[Brief description of the drawings]

第1図(a)は本発明の一実施例の縦断面図、第1図
(b)はノズルから噴出される気流噴出圧の様子を表わ
したグラフ、第2図は本発明の他の実施例の縦断面図で
ある。 1……チップキャリア、2……誘電体基板、3……導体
層、4……加熱台、、5……ソルダー、6……半導体ペ
レット、7……高圧窒素管、8……気体加熱装置、9…
…気圧調整装置、10……噴出ノズル、11……金属板、12
……誘電体基板層、13……凹部(マウント部)。
FIG. 1 (a) is a longitudinal sectional view of one embodiment of the present invention, FIG. 1 (b) is a graph showing the state of air flow jet pressure ejected from a nozzle, and FIG. 2 is another embodiment of the present invention. It is a longitudinal section of an example. DESCRIPTION OF SYMBOLS 1 ... Chip carrier, 2 ... Dielectric substrate, 3 ... Conductor layer, 4 ... Heating table, 5 ... Solder, 6 ... Semiconductor pellet, 7 ... High pressure nitrogen tube, 8 ... Gas heating device , 9 ...
... Pressure adjusting device, 10 ... Nozzle, 11 ... Metal plate, 12
... Dielectric substrate layer, 13... Recess (mounting portion).

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】加熱台上にチップキャリアをのせ、前記チ
ップキャリア上にソルダーをのせ前記ソルダー上に半導
体ペレットをのせ、前記チップキャリア,前記ソルダ
ー,前記半導体ペレットを前記ソルダーの融点まで加熱
し、前記ソルダーを溶融させ、その後冷却して前記チッ
プキャリア上に前記半導体ペレットをろう付けする半導
体ペレットマウント方法において、前記ソルダー溶融時
に前記半導体ペレットにパルス状気流を加えることによ
り前記ペレット及び溶融した前記ソルダーを振動させ前
記チップキャリアに前記半導体ペレットをロウ付け(マ
ウント)することを特徴とする半導体ペレットマウント
方法。
1. A chip carrier is placed on a heating table, a solder is placed on the chip carrier, and a semiconductor pellet is placed on the solder. The chip carrier, the solder, and the semiconductor pellet are heated to a melting point of the solder. In a semiconductor pellet mounting method in which the solder is melted and then cooled to braze the semiconductor pellet on the chip carrier, the pellet and the molten solder are added by applying a pulsed airflow to the semiconductor pellet during the melting of the solder. And mounting the semiconductor pellet on the chip carrier by vibrating the semiconductor pellet.
【請求項2】前記パルス状気流は、加熱された気体から
なる気流であることを特徴とする請求項1記載の半導体
ペレットマウント方法。
2. The method according to claim 1, wherein the pulsed airflow is an airflow made of a heated gas.
【請求項3】チップキャリアが載置される加熱台と、気
体を加熱する気体加熱装置と、前記加熱台に載置された
チップキャリア上にソルダーを介して搭載された半導体
ペレットへ向けて前記気体加熱装置により加熱された気
体を噴出する噴出ノズルとを備える半導体ペレットマウ
ント装置であって、前記気体加熱装置により加熱された
気体を前記噴出ノズルへ導く気圧調整装置をさらに備
え、前記気圧調整装置は、前記気体加熱装置により加熱
された気体の圧力をパルス状に変調し、これによって前
記ノズルから噴出する気体をパルス状気流とすることを
特徴とする半導体ペレットマウント装置。
3. A heating table on which a chip carrier is mounted, a gas heating device for heating gas, and a semiconductor heating device mounted on the chip carrier mounted on the heating table via a solder. A semiconductor pellet mounting device comprising: a jet nozzle for jetting a gas heated by a gas heating device; and a pressure adjusting device for guiding the gas heated by the gas heating device to the jet nozzle. Is a semiconductor pellet mounting apparatus, wherein the pressure of the gas heated by the gas heating device is modulated in a pulsed manner, whereby the gas ejected from the nozzle is converted into a pulsed airflow.
JP2079227A 1990-03-28 1990-03-28 Semiconductor pellet mounting method and semiconductor pellet mounting apparatus Expired - Lifetime JP2924059B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2079227A JP2924059B2 (en) 1990-03-28 1990-03-28 Semiconductor pellet mounting method and semiconductor pellet mounting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2079227A JP2924059B2 (en) 1990-03-28 1990-03-28 Semiconductor pellet mounting method and semiconductor pellet mounting apparatus

Publications (2)

Publication Number Publication Date
JPH03278548A JPH03278548A (en) 1991-12-10
JP2924059B2 true JP2924059B2 (en) 1999-07-26

Family

ID=13684019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2079227A Expired - Lifetime JP2924059B2 (en) 1990-03-28 1990-03-28 Semiconductor pellet mounting method and semiconductor pellet mounting apparatus

Country Status (1)

Country Link
JP (1) JP2924059B2 (en)

Also Published As

Publication number Publication date
JPH03278548A (en) 1991-12-10

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