JP2912076B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element is supported by a lead frame and sealed with a resin, and more particularly, to a semiconductor device in consideration of a structure for radiating heat generated from the semiconductor element.

[0002]

2. Description of the Related Art As the capacity of a semiconductor device increases, the amount of heat generated from a semiconductor element increases, and efforts have been made to improve the package structure for accommodating the semiconductor in order to release the heat. 4A and 4B show an example of the structure of a conventional semiconductor device. FIG. 4A is a plan view of one example, and FIG. 4B is a sectional view thereof. (C) is a sectional view showing another conventional example. The semiconductor element 5 is fixed to the island 1 of the lead frame, and the electrode pads of the element and the tips of the internal leads 4 of the lead frame 3 are connected by thin wires 7. The semiconductor element 5 and the internal lead 4 are sealed with a resin portion 6 as shown by a dotted line.

The heat generated by the semiconductor device mainly occurs on the element surface, and the heat is radiated to the outside through the internal leads 4 via the resin. To further promote this heat flow, FIG.
As shown in (c), there is a structure in which a metal piece 11 having good conductivity is bonded with a non-conductive sheet 9 interposed therebetween.

[0004]

In the above-mentioned conventional semiconductor device, the heat dissipation is improved by using a copper-based lead frame. However, at present, heat can be dissipated up to only about 1 watt. This is mainly due to the poor thermal conductivity of the resin, and it is considered that the resin between the semiconductor element and the internal leads is obstructing the proper flow of heat. Therefore, as a result of taking measures against the structure shown in FIG. 4 (c), although the heat dissipation is somewhat improved, as can be estimated from the simulated heat dissipation, most of the heat on the element surface is removed from each element surface. The effect of the high thermal conductivity metal piece 11 was not so large because a large percentage of the piece escaped to the tip of each internal lead. SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device in which the above-mentioned heat dissipation is greatly improved.

[0005]

In order to achieve the above-mentioned object, a semiconductor device according to the present invention comprises an antenna having a semiconductor element mounted thereon.
The island is supported by suspension leads and the side edges of the island
And a number of internal leads facing each other
And the islands and internal lead portions are resin-sealed.
In a resin-encapsulated semiconductor device, a material having a higher thermal conductivity than the encapsulating resin is arranged at a fixed interval between a side end of the island and a tip of the internal lead.

Further, the present invention provides an eye mounted with a semiconductor element.
The land is supported by suspension leads, and the side end of the island is
Many internal leads are arranged facing each other at regular intervals,
The islands and internal leads are not sealed with resin.
In that resin-sealed semiconductor device, the internal lead or a non-conductive sheet is adhered to the rear surface of said island a constant spacing between the side edge or side of the semiconductor element of the island of the tip of the inner lead on a portion of the non-conductive sheet is constituted by adhering a high pre SL thermal conductivity than the sealing resin material.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. 1A and 1B show a first embodiment of a semiconductor device according to the present invention, wherein FIG. 1A is a plan view and FIG. 1B is a sectional view thereof. In the figure, portions denoted by the same reference numerals as those used in the conventional example are the same components. With the side edges of Island 1;
A high thermal conductive material 8 is arranged between the internal leads 4 facing each other at a fixed interval. Alumina is suitable for the high thermal conductive material 8 at a low cost. In addition, boron nitride, diamond, or the like can be used if the thermal conductivity is higher than that of the resin 6. As is apparent from FIG. 1B, the high thermal conductive material 8 has the same thickness as the lead frame 3 and has the same surface, but the high thermal conductive material 8 is made thicker unless it touches the fine wire 7. You can also jump out of the top of the island.

FIGS. 2A and 2B show a second embodiment of the semiconductor device according to the present invention, wherein FIG. 2A is a plan view and FIG. 2B is a sectional view thereof. The reference numerals used are the same as those in FIG. In this embodiment, a high thermal conductive material 8 is fixed on a non-conductive sheet 9 adhered to the back surface of the island 1 of the lead frame 3 and the back surface of the internal lead 4. The position of the high thermal conductive material 8 is the same as that of the embodiment shown in FIG. 1, and is disposed between the side end of the island 1 and the internal lead 4 facing each other at a fixed interval. . With such a structure, the assembly of the semiconductor device is further facilitated.

FIGS. 3A and 3B are views showing a third embodiment of the semiconductor device according to the present invention, wherein FIG. 3A is a plan view and FIG. The reference numerals used are the same as those in FIG. In this embodiment, a high thermal conductive material 8 is fixed on a non-conductive sheet 19 adhered to the back surface of the internal lead 4 of the lead frame 3. The high thermal conductive material 8 is a semiconductor element 5
And the internal lead 4 facing at a fixed interval. Further semiconductor device 5
Is depressed downward from the depressing unit 10. In this embodiment, the heat dissipation effect is the largest in the embodiment because the semiconductor element surface, the high heat conductive material, and the internal lead that generate heat are arranged on the same surface.

[0010]

As described above, the present invention has a structure in which a substance having a higher thermal conductivity than the sealing resin is arranged at a fixed interval between the island and the internal lead. The flow of heat transmitted to the semiconductor device can be promoted, and the heat dissipation of the semiconductor element can be significantly improved.

[Brief description of the drawings]

FIGS. 1A and 1B are views showing a first embodiment of a semiconductor device according to the present invention, wherein FIG. 1A is a plan view and FIG.

FIGS. 2A and 2B are views showing a second embodiment of the semiconductor device according to the present invention, wherein FIG. 2A is a plan view and FIG.

3A and 3B are views showing a third embodiment of the semiconductor device according to the present invention, wherein FIG. 3A is a plan view and FIG. 3B is a cross-sectional view.

4A and 4B are diagrams showing an example of a conventional semiconductor device, wherein FIG. 4A is a plan view and FIG. 4B is a cross-sectional view. (C) is a sectional view of another conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Island 2 ... Suspended lead 3 ... Lead frame 4 ... Internal lead 5 ... Semiconductor element 6 ... Resin sealing part 7 ... Wire 8 ... High thermal conductive substance 9, 19 ... Non-conductive sheet 10 ... Suspended lead depress part 11 ... High thermal conductive metal piece

Claims (2)

(57) [Claims] 1. An island on which a semiconductor element is mounted
With a certain distance from the side edge of the island.
A large number of internal leads facing each other,
And resin-encapsulated half with internal leads
The semiconductor device according to claim 1, wherein a substance having a higher thermal conductivity than the sealing resin is disposed at a predetermined interval between the side end of the island and the tip of the internal lead. 2. An island on which a semiconductor element is mounted is suspended from the island.
With a certain distance from the side edge of the island.
A large number of internal leads facing each other,
And a resin-sealed mold with resin-sealed internal lead portions
In conductor arrangement, wherein the inner lead or a non-conductive sheet is adhered to the rear surface of said island, said a fixed interval portion between the side edge or side of the semiconductor element of the island of the tip of the inner lead on the non-conductive sheet, the semiconductor device is characterized in that to adhere the pre-Symbol higher thermal conductivity than the sealing resin material.