JP2887128B2 - 不揮発性半導体メモリ素子の製造方法 - Google Patents
不揮発性半導体メモリ素子の製造方法Info
- Publication number
- JP2887128B2 JP2887128B2 JP10033086A JP3308698A JP2887128B2 JP 2887128 B2 JP2887128 B2 JP 2887128B2 JP 10033086 A JP10033086 A JP 10033086A JP 3308698 A JP3308698 A JP 3308698A JP 2887128 B2 JP2887128 B2 JP 2887128B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- gate
- forming
- program
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 25
- 239000012535 impurity Substances 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 230000005641 tunneling Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970031838A KR100244278B1 (ko) | 1997-07-09 | 1997-07-09 | 비휘발성 메모리 소자의 제조 방법 |
| KR31838/1997 | 1997-07-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1140783A JPH1140783A (ja) | 1999-02-12 |
| JP2887128B2 true JP2887128B2 (ja) | 1999-04-26 |
Family
ID=19513923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10033086A Expired - Fee Related JP2887128B2 (ja) | 1997-07-09 | 1998-02-16 | 不揮発性半導体メモリ素子の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2887128B2 (ko) |
| KR (1) | KR100244278B1 (ko) |
| CN (1) | CN1127760C (ko) |
| DE (1) | DE19813457C2 (ko) |
| TW (1) | TW344139B (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100466979B1 (ko) * | 1997-12-26 | 2005-04-06 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 장치의 프로그램 검증 방법 |
| KR100317318B1 (ko) * | 1998-04-23 | 2001-12-22 | 김영환 | 비휘발성 메모리 소자 및 그의 제조방법 |
| JP4012341B2 (ja) * | 1999-07-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JP4117998B2 (ja) * | 2000-03-30 | 2008-07-16 | シャープ株式会社 | 不揮発性半導体記憶装置、その読み出し、書き込み方法及び消去方法、その製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936257A (ja) * | 1995-07-14 | 1997-02-07 | Matsushita Electron Corp | 半導体記憶装置およびその製造方法 |
| JP2734433B2 (ja) * | 1995-10-31 | 1998-03-30 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
-
1997
- 1997-07-09 KR KR1019970031838A patent/KR100244278B1/ko not_active IP Right Cessation
- 1997-10-15 TW TW086115104A patent/TW344139B/zh not_active IP Right Cessation
-
1998
- 1998-02-16 JP JP10033086A patent/JP2887128B2/ja not_active Expired - Fee Related
- 1998-03-26 DE DE19813457A patent/DE19813457C2/de not_active Expired - Fee Related
- 1998-04-28 CN CN98108027A patent/CN1127760C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1204870A (zh) | 1999-01-13 |
| KR100244278B1 (ko) | 2000-02-01 |
| TW344139B (en) | 1998-11-01 |
| KR19990009425A (ko) | 1999-02-05 |
| CN1127760C (zh) | 2003-11-12 |
| JPH1140783A (ja) | 1999-02-12 |
| DE19813457A1 (de) | 1999-01-14 |
| DE19813457C2 (de) | 2001-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2670219B2 (ja) | 不揮発性半導体メモリ装置の製造方法 | |
| JP3366173B2 (ja) | 不揮発性半導体メモリの製造方法 | |
| US5953602A (en) | EEPROM cell and related method of making thereof | |
| JP4818061B2 (ja) | 不揮発性半導体メモリ | |
| US5736765A (en) | EEPROM cell having improved topology and reduced leakage current | |
| TWI390713B (zh) | 非揮發性半導體記憶裝置及其製造方法 | |
| JP3008812B2 (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| KR100389278B1 (ko) | 반도체 기억장치의 제조방법 및 반도체 기억장치 | |
| JP2652931B2 (ja) | 不揮発性メモリ素子の製造方法 | |
| US6998669B2 (en) | Memory cells with nonuniform floating gate structures | |
| JP2887128B2 (ja) | 不揮発性半導体メモリ素子の製造方法 | |
| US5576232A (en) | Fabrication process for flash memory in which channel lengths are controlled | |
| JP2643860B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| US6093603A (en) | Fabricating semiconductor memory devices with improved cell isolation | |
| US20040084718A1 (en) | Structure, fabrication method and operation method of flash memory | |
| EP0112078A2 (en) | A semiconductor memory element and a method for manufacturing it | |
| US6146943A (en) | Method for fabricating nonvolatile memory device | |
| KR0172271B1 (ko) | 플래쉬 이이피롬 셀의 제조방법 | |
| JP2001119002A (ja) | 半導体記憶装置の製造方法及び半導体記憶装置 | |
| JPH0139663B2 (ko) | ||
| KR100211072B1 (ko) | 플래쉬 메모리 셀의 제조방법 | |
| JP4040138B2 (ja) | 不揮発性半導体記憶装置の製造方法 | |
| KR100294693B1 (ko) | 비휘발성메모리및그의제조방법 | |
| KR20010037863A (ko) | 플래시 메모리 소자의 제조방법 | |
| KR100303916B1 (ko) | 플레쉬 메모리 셀의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080212 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090212 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100212 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100212 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110212 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110212 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120212 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130212 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140212 Year of fee payment: 15 |
|
| LAPS | Cancellation because of no payment of annual fees |