JP2834074B2 - Lead frame and resin-sealed semiconductor device using the same - Google Patents

Lead frame and resin-sealed semiconductor device using the same

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Publication number
JP2834074B2
JP2834074B2 JP8137146A JP13714696A JP2834074B2 JP 2834074 B2 JP2834074 B2 JP 2834074B2 JP 8137146 A JP8137146 A JP 8137146A JP 13714696 A JP13714696 A JP 13714696A JP 2834074 B2 JP2834074 B2 JP 2834074B2
Authority
JP
Japan
Prior art keywords
resin
lead frame
lead
plating layer
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP8137146A
Other languages
Japanese (ja)
Other versions
JPH09321208A (en
Inventor
光浩 松友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP8137146A priority Critical patent/JP2834074B2/en
Priority to KR1019970022162A priority patent/KR100251331B1/en
Publication of JPH09321208A publication Critical patent/JPH09321208A/en
Application granted granted Critical
Publication of JP2834074B2 publication Critical patent/JP2834074B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はリードフレーム及び
それを用いた樹脂封止型半導体装置に関する。The present invention relates to a lead frame and a resin-sealed semiconductor device using the same.

【０００２】[0002]

【従来の技術】図６（ａ），（ｂ）及び（ｃ），（ｄ）
は従来のリードフレームの一例の平面図、その内部リー
ドの部分拡大平面図及びそれを用いた樹脂封止型半導体
装置の断面図、ボンディングワイヤとリードの接続部の
部分拡大断面図である。従来のリードフレームは、図６
（ａ），（ｂ）に示すように、４２％Ｎｉ−Ｆｅ合金も
しくは銅を材料とするリード１の先端にボンディングエ
リアとしてめっき層２を施したものがある。この内部リ
ード１先端にめっき層２を施すのは、ワイヤボンディン
グ用下地として導電性，接合性を確保するためである。
なお、めっき層２の材料としては、通常銀めっきが用い
られる。2. Description of the Related Art FIGS. 6 (a), 6 (b) and 6 (c), 6 (d)
FIG. 1 is a plan view of an example of a conventional lead frame, a partially enlarged plan view of an internal lead thereof, a sectional view of a resin-sealed semiconductor device using the same, and a partially enlarged sectional view of a connection portion between a bonding wire and a lead. FIG. 6 shows a conventional lead frame.
As shown in (a) and (b), there is a lead 1 made of a 42% Ni-Fe alloy or copper as a material and provided with a plating layer 2 as a bonding area at the tip. The reason why the plating layer 2 is applied to the tip of the internal lead 1 is to secure conductivity and bondability as a base for wire bonding.
Incidentally, silver plating is usually used as the material of the plating layer 2.

【０００３】次に、図６（ｃ）に示すように、リードフ
レームのアイランド４に半導体チップ６をマウントし、
金を材料とするボンディングワイヤ８を接続しエポキシ
樹脂７で封止する。尚ボンディングワイヤ８とリード１
の接続面は、図６（ｄ）に示すようにリード１先端とボ
ンディングの間はめっき層２のみの平坦な形状となって
いる。また、ボンディングボールは、つぶれた形で接続
されており、つぶれた部分は、ワイヤ部に比べ薄く変形
している。Next, as shown in FIG. 6C, a semiconductor chip 6 is mounted on the island 4 of the lead frame.
A bonding wire 8 made of gold is connected and sealed with an epoxy resin 7. In addition, bonding wire 8 and lead 1
As shown in FIG. 6D, the connection surface has a flat shape of only the plating layer 2 between the tip of the lead 1 and the bonding. The bonding ball is connected in a crushed manner, and the crushed portion is deformed thinner than the wire portion.

【０００４】図７（ａ）及び（ｂ），（ｃ）は従来のリ
ードフレームの問題点を説明する樹脂封止型半導体装置
の断面図及びそのＡ部の剥離の発生を説明する断面図で
ある。従来の樹脂封止型半導体装置は、図７（ａ）及び
（ｂ），（ｃ）に示すように、ユーザーでの実装時にパ
ッケージ（以下、ＰＫＧと記す）が吸湿していると熱応
力によるＰＫＧ内の水分の膨張により樹脂７とめっき層
２の界面で水分の膨張が生じリード１先端よりめっき層
２に沿って剥離が発生するという問題点があった。FIGS. 7 (a), 7 (b) and 7 (c) are cross-sectional views of a resin-encapsulated semiconductor device for explaining the problems of the conventional lead frame and cross-sectional views for explaining the occurrence of peeling at the portion A. is there. As shown in FIGS. 7 (a), 7 (b) and 7 (c), a conventional resin-encapsulated semiconductor device is affected by thermal stress when a package (hereinafter referred to as PKG) absorbs moisture during mounting by a user. There is a problem in that the expansion of the water in the PKG causes the expansion of the water at the interface between the resin 7 and the plating layer 2, and the separation occurs from the tip of the lead 1 along the plating layer 2.

【０００５】[0005]

【発明が解決しようとする課題】第１の問題点は、従来
の樹脂封止型半導体装置は、ユーザーでの実装時にＰＫ
Ｇが吸湿していると、熱応力によるＰＫＧ内の水分の膨
張によりボンディングワイヤが断線し、導通故障に至っ
てしまう。その理由は、実装時のＰＫＧ内部での水分膨
張がリード先端部で生じるためである。リード先端のめ
っきエリアは、銀めっきであり、この銀めっきはリード
フレームが樹脂封止されるまでの製造工程中に酸化を生
じてしまう。その結果、樹脂と銀めっきの界面の密着性
が悪くなりこの箇所で実装時に水分膨張による樹脂とめ
っき層との界面の剥離を生じてしまう。尚、剥離はリー
ド先端からめっき層に沿って進行しボンディングボール
のつぶれ部（ワイヤが薄い箇所）でボンディングワイヤ
の断線を生じてしまう。The first problem is that the conventional resin-encapsulated semiconductor device requires PK
When G absorbs moisture, the bonding wire breaks due to the expansion of moisture in the PKG due to thermal stress, resulting in conduction failure. The reason is that water expansion inside the PKG at the time of mounting occurs at the tip of the lead. The plating area at the tip of the lead is silver plating, and this silver plating causes oxidation during the manufacturing process until the lead frame is sealed with resin. As a result, the adhesiveness of the interface between the resin and the silver plating is deteriorated, and the interface between the resin and the plating layer is peeled off at this point due to moisture expansion during mounting. The peeling proceeds from the tip of the lead along the plating layer and breaks the bonding wire at a crushed portion of the bonding ball (where the wire is thin).

【０００６】本発明はユーザーでの実装性を向上させた
信頼性の高い樹脂封止型半導体装置を提供することを目
的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a highly reliable resin-encapsulated semiconductor device having improved mountability for a user.

【０００７】[0007]

【課題を解決するための手段】本発明のリードフレーム
は、リードのボンディングワイヤが接続される先端面に
めっき層を施し、このめっき層の内側に接着剤を介して
先端面を接続するか、先端面を分離するか、先端面を分
離するように滴下樹脂にて貼りつけられていることを特
徴とする。According to the lead frame of the present invention, a plating layer is applied to the tip end surface of the lead to which the bonding wire is connected, and the tip end surface is connected to the inside of the plating layer via an adhesive. It is characterized in that the tip end surface is separated or the tip end surface is separated by dropping resin.

【０００８】本発明の樹脂封止型半導体装置は、リード
のボンディングワイヤが接続される先端面にめっき層を
施し、このめっき層の内側に接着剤を介して先端面を接
続するか、先端面を分離するか、先端面を分離するよう
に滴下樹脂にて貼りつけられたリードフレームに半導体
チップをマウントし、樹脂封止したことを特徴とする。In the resin-encapsulated semiconductor device according to the present invention, a plating layer is formed on a tip end surface of a lead to which a bonding wire is connected, and the tip end surface is connected to the inside of the plating layer via an adhesive, or Or a semiconductor chip is mounted on a lead frame attached with a dropping resin so as to separate the front end face, and is sealed with a resin.

【０００９】本発明によると、まず、図２に示すよう
に、リード１先端からボンディングボールの間にストッ
パーとなる絶縁テープ３を設けることによりリード１先
端より生じた剥離は、絶縁テープ３の位置で止まってし
まい、ボンディングワイヤ８の断線に至らない。According to the present invention, first, as shown in FIG. 2, by providing the insulating tape 3 serving as a stopper between the leading end of the lead 1 and the bonding ball, the peeling off from the leading end of the lead 1 is prevented by the position of the insulating tape 3. And the bonding wire 8 is not broken.

【００１０】次に、図５に示すように、ボンディングボ
ールを滴下樹脂９にてコーティングすることにより、リ
ード１先端から生じた剥離は、めっき層２及び滴下樹脂
９の上側に沿って生じる。滴下樹脂９をコーティングす
ることにより、ボンディングボールの薄い箇所は保護さ
れる為、剥離部分のボンディングワイヤ８の強度は強
く、ボンディングワイヤ８の断線には至らない。[0010] Next, as shown in FIG. 5, by coating the bonding ball with the dripping resin 9, peeling from the tip of the lead 1 occurs along the plating layer 2 and the upper side of the dripping resin 9. Since the thin portion of the bonding ball is protected by coating with the dripping resin 9, the strength of the bonding wire 8 at the peeled portion is high and the bonding wire 8 does not break.

【００１１】[0011]

【発明の実施の形態】次に本発明の実施の形態について
図面を参照して説明する。Embodiments of the present invention will now be described with reference to the drawings.

【００１２】図１（ａ）〜（ｅ）は本発明の第１の実施
の形態のリードフレームの平面図、部分拡大平面図、そ
の断面図及びそれを用いた樹脂封止型半導体装置の断面
図、部分拡大断面図、図２は第１の実施の形態の効果を
説明する断面図である。本発明の第１の実施の形態のリ
ードフレームは図１（ａ）〜（ｃ）に示すように、リー
ド１の先端面に膜厚が１０μｍ程度のフィルム樹脂から
なる接着剤５を介してポリイミドからなる絶縁テープ３
を貼りつけたことを特徴としている。この絶縁テープ３
は、リード１間を接続するように貼りつけている。ま
た、この絶縁テープ３の外側のボンディングエリアに
は、めっき層２が施されている。リード１の絶縁テープ
３貼り付け部分にめっき層２を施していないのは銀めっ
き層のマイグレーションが接着剤５及び絶縁テープ３の
部分に発生するのを防止するためである。FIGS. 1A to 1E are a plan view, a partially enlarged plan view, a sectional view, and a sectional view of a resin-sealed semiconductor device using the lead frame according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating the effect of the first embodiment. As shown in FIGS. 1 (a) to 1 (c), a lead frame according to a first embodiment of the present invention has a polyimide film on an end surface of a lead 1 via an adhesive 5 made of a film resin having a film thickness of about 10 μm. Insulating tape 3 consisting of
It is characterized by having been pasted. This insulating tape 3
Are attached so as to connect the leads 1. Further, a plating layer 2 is applied to a bonding area outside the insulating tape 3. The reason why the plating layer 2 is not applied to the portion where the insulating tape 3 is attached to the lead 1 is to prevent migration of the silver plating layer from occurring in the adhesive 5 and the insulating tape 3.

【００１３】本発明の第１の実施の形態のリードフレー
ムを用いた半導体装置は、図１（ｄ），（ｅ）に示すよ
うに、リード１のボンディングエリアのめっき層２と半
導体チップ６を接続するが、リード１先端とボンディン
グボールの間には接着剤５によって接着された絶縁テー
プ３が介在する形となる。このため、図２に示すよう
に、ユーザー実装時の水分膨張によるリード１先端部の
剥離をボンディングボール手前で防ぎボンディングワイ
ヤ８の断線を防止することができる。As shown in FIGS. 1D and 1E, a semiconductor device using a lead frame according to a first embodiment of the present invention comprises a plating layer 2 and a semiconductor chip 6 in a bonding area of a lead 1. Although the connection is made, an insulating tape 3 bonded by an adhesive 5 is interposed between the tip of the lead 1 and the bonding ball. For this reason, as shown in FIG. 2, peeling of the tip of the lead 1 due to moisture expansion at the time of user mounting can be prevented in front of the bonding ball, and disconnection of the bonding wire 8 can be prevented.

【００１４】図３（ａ）〜（ｅ）は本発明の第２の実施
の形態のリードフレームの平面図、部分拡大平面図、そ
の断面図及びそれを用いた樹脂封止型半導体装置の断面
図、部分拡大断面図である。本発明の第２の実施の形態
のリードフレームは図３（ａ）〜（ｃ）に示すように、
リード１の先端面のみにリード１間を分離した形状で膜
厚が１０μｍ程度のフィルム樹脂からなる接着剤５を介
してポリイミドからなる絶縁テープ３を貼り付けたこと
を特徴としている。リードフレームをこのように形成す
ることにより、絶縁テープ３がリード１間にないので接
着剤５への不純物の溶け出し及び銀めっき層からのマイ
グレーション発生等の不具合によるリード１間のショー
ト故障の発生を防止することができる。従って、リード
１に接着剤５を介して絶縁テープ３を貼りつけるエリア
にめっき層２の有無にかかわらず問題がなくなる。ま
た、絶縁テープ３の材質も絶縁物の必要はない。このリ
ードフレームの製造は、めっき層２形成後に絶縁テープ
３を貼りつけ、リード２と同時に絶縁テープ３をプレス
加工すればよい。リードフレームをこのように形成する
ことにより、図３（ｄ），（ｅ）に示すように、第１の
実施の形態の半導体装置と同様ユーザー実装時の水分膨
張によるリード１先端面の剥離をボンディングボール手
前で防ぎボンディングワイヤ８の断線を防止することが
できる。FIGS. 3A to 3E are a plan view, a partially enlarged plan view, a cross-sectional view, and a cross-sectional view of a resin-sealed semiconductor device using the lead frame according to the second embodiment of the present invention. It is a figure and a partial expanded sectional view. As shown in FIGS. 3A to 3C, the lead frame according to the second embodiment of the present invention
It is characterized in that an insulating tape 3 made of polyimide is attached only to the tip end surface of the lead 1 via an adhesive 5 made of a film resin having a film thickness of about 10 μm in a shape in which the lead 1 is separated. By forming the lead frame in this manner, since the insulating tape 3 is not provided between the leads 1, the short-circuit failure between the leads 1 due to the dissolution of impurities into the adhesive 5 and the occurrence of migration from the silver plating layer occurs. Can be prevented. Therefore, there is no problem regardless of the presence or absence of the plating layer 2 in the area where the insulating tape 3 is attached to the lead 1 via the adhesive 5. Further, the material of the insulating tape 3 does not need to be an insulator. The lead frame may be manufactured by applying an insulating tape 3 after forming the plating layer 2 and pressing the insulating tape 3 simultaneously with the lead 2. By forming the lead frame in this manner, as shown in FIGS. 3D and 3E, peeling of the leading end surface of the lead 1 due to water expansion at the time of user mounting is performed similarly to the semiconductor device of the first embodiment. It is possible to prevent the bonding wire 8 from breaking before the bonding ball.

【００１５】図４（ａ）〜（ｃ）は本発明の第３の実施
の形態のリードフレームのリードの部分の拡大平面図、
その断面図及びそれを用いた樹脂封止型半導体装置の断
面図、図５は第３の実施の形態の効果を説明する断面図
である。本発明のリードフレーム及びそれを用いた樹脂
封止型半導体装置は、図４（ａ）〜（ｃ）に示すよう
に、従来のリードフレームにボンディングワイヤ８を接
続した後にボンディングボールを滴下樹脂９により保護
したことを特徴としている。この滴下樹脂９は液状のボ
リイミド樹脂またはアクリル樹脂を滴下し、ポリイミド
樹脂の場合は熱硬化、アクリル樹脂の場合はＵＶ硬化さ
せることによって保護層を形成している。滴下樹脂９の
滴下量は、ボンディングボールが埋まる程度で良い。そ
の後、樹脂７で封止しパッケージングする。半導体装置
をこのように構成することにより、図５に示すように、
剥離が発生してもボンディングワイヤ８のつぶれ部の肉
厚の薄い部分が滴下樹脂９にて保護されているのでボン
ディングワイヤ８の断線に至ることはない。FIGS. 4A to 4C are enlarged plan views of a lead portion of a lead frame according to a third embodiment of the present invention.
FIG. 5 is a cross-sectional view of a resin-sealed semiconductor device using the same, and FIG. 5 is a cross-sectional view illustrating the effect of the third embodiment. As shown in FIGS. 4 (a) to 4 (c), the lead frame of the present invention and the resin-encapsulated semiconductor device using the same have a bonding wire 8 connected to a conventional lead frame and then a bonding ball 8 It is characterized by being protected by. The dropping resin 9 forms a protective layer by dropping a liquid polyimide resin or an acrylic resin, and heat-curing a polyimide resin or UV-curing an acrylic resin. The amount of the dripping resin 9 may be such that the bonding ball is buried. After that, it is sealed with resin 7 and packaged. By configuring the semiconductor device in this way, as shown in FIG.
Even if peeling occurs, the thin portion of the crushed portion of the bonding wire 8 is protected by the dripping resin 9, so that the bonding wire 8 does not break.

【００１６】[0016]

【発明の効果】第１の効果は、ユーザー実装時の水分膨
張によるリード先端面の剥離をボンディングボール手前
で防ぎ、ボンディングワイヤ断線を防止することができ
ることである。その理由は、実装時の熱ストレスで生じ
るリード先端面からの剥離がボンディングボール手前の
絶縁テープ部分で止まるからである。The first effect is that peeling of the lead end surface due to moisture expansion at the time of user mounting can be prevented in front of the bonding ball, and disconnection of the bonding wire can be prevented. The reason for this is that peeling from the lead end surface caused by thermal stress during mounting stops at the insulating tape portion just before the bonding ball.

【００１７】第２の効果は、ボンディングボールを保護
することにより、ユーザー実装時の水分膨張によるリー
ド先端面の剥離によるボンディングワイヤ断線を抑制で
きる。その理由は、ボンディングワイヤがつぶれ薄くな
ってボンディングボールを保護することによって、リー
ド先端の剥離は通常ボンディングワイヤ部分に生じる
が、ボンディングワイヤ断線しにくくなるためである。The second effect is that, by protecting the bonding ball, it is possible to suppress disconnection of the bonding wire due to peeling of the lead end surface due to moisture expansion during user mounting. The reason is that when the bonding wire is crushed and thinned to protect the bonding ball, peeling of the lead tip usually occurs at the bonding wire portion, but the bonding wire is hardly broken.

【図面の簡単な説明】[Brief description of the drawings]

【図１】（ａ）〜（ｅ）は本発明の第１の実施の形態の
リードフレームの平面図、部分拡大平面図、その断面図
及びそれを用いた樹脂封止型半導体装置の断面図、部分
拡大断面図である。FIGS. 1A to 1E are a plan view, a partially enlarged plan view, a cross-sectional view, and a cross-sectional view of a resin-sealed semiconductor device using the lead frame according to a first embodiment of the present invention; FIG.

【図２】第１の実施の形態の効果を説明する断面図であ
る。FIG. 2 is a cross-sectional view illustrating an effect of the first embodiment.

【図３】（ａ）〜（ｅ）は本発明の第２の実施の形態の
リードフレームの平面図、部分拡大平面図、その断面図
及びそれを用いた樹脂封止型半導体装置の断面図、部分
拡大断面図である。FIGS. 3A to 3E are a plan view, a partially enlarged plan view, a cross-sectional view, and a cross-sectional view of a resin-sealed semiconductor device using the lead frame according to the second embodiment of the present invention. FIG.

【図４】（ａ）〜（ｃ）は本発明の第３の実施の形態の
リードフレームのリードの部分拡大平面図、その断面図
及びそれを用いた樹脂封止型半導体装置の断面図であ
る。FIGS. 4A to 4C are a partially enlarged plan view of a lead of a lead frame according to a third embodiment of the present invention, a cross-sectional view thereof, and a cross-sectional view of a resin-sealed semiconductor device using the same. is there.

【図５】第３の実施の形態の効果を説明する断面図であ
る。FIG. 5 is a cross-sectional view illustrating an effect of the third embodiment.

【図６】（ａ），（ｂ）及び（ｃ），（ｄ）は、従来の
リードフレームの一例の平面図、その内部リードの部分
拡大平面図及びそれを用いた樹脂封止型半導体装置の断
面図、ボンディングワイヤとリードの接続部の部分拡大
断面図である。6 (a), (b) and (c), (d) are a plan view of an example of a conventional lead frame, a partially enlarged plan view of internal leads thereof, and a resin-sealed semiconductor device using the same. 3 is a cross-sectional view of FIG.

【図７】（ａ）及び（ｂ），（ｃ）は従来のリードフレ
ームの問題点を説明する樹脂封止型半導体装置の断面図
及びそのＡ部の剥離の発生を説明する断面図である。FIGS. 7A, 7B, and 7C are a cross-sectional view of a resin-encapsulated semiconductor device for explaining a problem of a conventional lead frame and a cross-sectional view for explaining occurrence of peeling at a portion A thereof. .

【符号の説明】[Explanation of symbols]

１ リード ２ めっき層 ３ 絶縁テープ ４ アイランド ５ 接着剤 ６ 半導体チップ ７ 樹脂 ８ ボンディングワイヤ ９ 滴下樹脂 DESCRIPTION OF SYMBOLS 1 Lead 2 Plating layer 3 Insulating tape 4 Island 5 Adhesive 6 Semiconductor chip 7 Resin 8 Bonding wire 9 Dropping resin

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体チップと外部との電気的接続をボ
ンディングワイヤを介して行なう型の半導体装置に用い
られるリードフレームであって、 半導体チップが固着
されるアイランドとボンディングワイヤの一端が接続さ
れる複数のリードとを備え、 各各のリードの、ボンデ
ィングワイヤが接続されるべき領域にはめっき層を施
し、前記めっき層よりアイランド側の領域に接着剤を介
して絶縁テープを貼着し、前記絶縁テープが各各のリー
ド毎に独立して貼りつけられ、隣接するリードどうしが
互いに分離されていることを特徴とするリードフレー
ム。1. An electrical connection between a semiconductor chip and the outside.
Used for semiconductor devices of the type which is performed via a bonding wire
Lead frame with semiconductor chips attached
Is connected to one end of the bonding wire.
And a plurality of leads,
A plating layer is applied to the area where the
And an adhesive is applied to the region on the island side of the plating layer.
And attach the insulating tape.
Is attached independently for each lead, and adjacent leads
A lead frame, which is separated from each other . 【請求項２】 半導体チップと外部との電気的接続をボ
ンディングワイヤを介して行なう型の半導体装置に用い
られるリードフレームであって、 半導体チップが固着
されるアイランドとボンディングワイヤの一端が接続さ
れる複数のリードとを備え、 各各のリードの、ボンデ
ィングワイヤが接続されるべき領域にはめっき層を施
し、前記めっき層よりアイランド側の領域に接着剤を介
して絶縁テープを貼着し、前記絶縁テープが、各各のリ
ード毎に独立して滴下樹脂にて貼りつけられていること
を特徴とするリードフレーム。2. An electrical connection between the semiconductor chip and the outside.
Used for semiconductor devices of the type which is performed via a bonding wire
Lead frame with semiconductor chips attached
Is connected to one end of the bonding wire.
And a plurality of leads,
A plating layer is applied to the area where the
And an adhesive is applied to the region on the island side of the plating layer.
And apply an insulating tape.
Insulated with dripping resin independently for each card
A lead frame characterized by the following .
JP8137146A 1996-05-30 1996-05-30 Lead frame and resin-sealed semiconductor device using the same Expired - Fee Related JP2834074B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8137146A JP2834074B2 (en) 1996-05-30 1996-05-30 Lead frame and resin-sealed semiconductor device using the same
KR1019970022162A KR100251331B1 (en) 1996-05-30 1997-05-30 Lead frame and a semiconductor device using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8137146A JP2834074B2 (en) 1996-05-30 1996-05-30 Lead frame and resin-sealed semiconductor device using the same

Publications (2)

Publication Number Publication Date
JPH09321208A JPH09321208A (en) 1997-12-12
JP2834074B2 true JP2834074B2 (en) 1998-12-09

Family

ID=15191900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8137146A Expired - Fee Related JP2834074B2 (en) 1996-05-30 1996-05-30 Lead frame and resin-sealed semiconductor device using the same

Country Status (2)

Country Link
JP (1) JP2834074B2 (en)
KR (1) KR100251331B1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0246754A (en) * 1988-08-08 1990-02-16 Nec Corp Lead frame for semiconductor device
JPH02106061A (en) * 1988-10-14 1990-04-18 Dainippon Printing Co Ltd Taping method of semiconductor lead frame
JPH0661411A (en) * 1992-08-04 1994-03-04 Nec Kyushu Ltd Lead frame for semiconductor device

Also Published As

Publication number Publication date
KR100251331B1 (en) 2000-04-15
JPH09321208A (en) 1997-12-12

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