JP2821887B2 - Ultrasonic cleaning equipment - Google Patents
Ultrasonic cleaning equipmentInfo
- Publication number
- JP2821887B2 JP2821887B2 JP24477888A JP24477888A JP2821887B2 JP 2821887 B2 JP2821887 B2 JP 2821887B2 JP 24477888 A JP24477888 A JP 24477888A JP 24477888 A JP24477888 A JP 24477888A JP 2821887 B2 JP2821887 B2 JP 2821887B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- gas
- water
- ultrasonic
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
【発明の詳細な説明】 《産業上の利用分野》 この発明は超音波洗浄装置に関し、特に半導体ウエハ
を純水（超純水）で洗浄するのに好適な超音波洗浄装置
に関する。Description: TECHNICAL FIELD The present invention relates to an ultrasonic cleaning apparatus, and more particularly, to an ultrasonic cleaning apparatus suitable for cleaning a semiconductor wafer with pure water (ultra pure water).
《従来の技術》 従来、半導体ウエハからその製造プロセスで使用され
た化学薬品等を取り除くために、純水ないし超純水を洗
浄水として洗浄が行なわれている。<< Conventional Technology >> Conventionally, in order to remove chemicals and the like used in a manufacturing process from a semiconductor wafer, cleaning is performed using pure water or ultrapure water as cleaning water.
この洗浄に当たっては、洗浄効果を高めるために洗浄
水に超音波を付加する超音波洗浄が行なわれている。す
なわち、被洗浄物である半導体ウエハを収容した洗浄槽
内に超音波供給系路純水を供給するとともに、洗浄槽に
設けられている超音波発振器を作動させて純水に超音波
を付加し、これにより半導体ウエハの表面から化学薬品
等を除去している。In this cleaning, ultrasonic cleaning is performed in which ultrasonic waves are added to cleaning water to enhance the cleaning effect. That is, while supplying pure water to the cleaning tank containing the semiconductor wafer to be cleaned, the ultrasonic water is supplied to the cleaning tank, and an ultrasonic oscillator provided in the cleaning tank is operated to apply ultrasonic waves to the pure water. Thus, chemicals and the like are removed from the surface of the semiconductor wafer.
《発明が解決しようとする課題》 しかしながら、従来の超音波洗浄装置にあっては、洗
浄水に超音波を付加して洗浄しても洗浄効果が一様でな
く、特に長時間洗浄を行なっていると徐々に洗浄効果が
低下してくるという問題点があった。<< Problems to be Solved by the Invention >> However, in the conventional ultrasonic cleaning device, even if cleaning is performed by adding ultrasonic waves to cleaning water, the cleaning effect is not uniform. There is a problem that the cleaning effect gradually decreases.
この原因を鋭意研究したところ、洗浄水の溶存ガスが
少ないと洗浄効果が低下することがわかった。つまり超
音波洗浄の洗浄機構は、洗浄液に超音波が付加される
と、被洗浄物が超音波の音場によりその表面にキャビテ
ーションが発生し、このキャビテーションの衝撃力によ
り異物が除去される用に作用する。ところが、純水のよ
うにその製造プロセスで脱気された洗浄水のときには溶
在ガスが少なく効果的なキャビテーションの発生が起こ
りにくいだけでなく、長時間の超音波付加により洗浄水
が脱気されて、ますますキャビテーションが起こりにく
くなるからである。After extensive research into the cause, it has been found that the cleaning effect is reduced when the amount of dissolved gas in the cleaning water is small. In other words, the cleaning mechanism of ultrasonic cleaning is such that when ultrasonic waves are added to the cleaning liquid, the object to be cleaned generates cavitation on its surface due to the sound field of the ultrasonic waves, and foreign substances are removed by the impact force of the cavitation. Works. However, when the cleaning water is degassed in the manufacturing process like pure water, the amount of dissolved gas is small and effective cavitation hardly occurs.In addition, the cleaning water is degassed by applying ultrasonic waves for a long time. This is because cavitation is less likely to occur.
《課題を解決するための手段》 本発明は、上記課題解決のためになされたものであっ
て、その構成は被洗浄物が収容された洗浄槽内に洗浄水
供給系路を介して純水からなる洗浄水を供給し、該洗浄
水に超音波を付加して被洗浄物を洗浄する超音波洗浄装
置において、 前記洗浄水供給系路にガス溶解手段を設けて洗浄水に
ガスを溶解させたことを特徴とするものである。<< Means for Solving the Problems >> The present invention has been made to solve the above problems, and has a configuration in which pure water is supplied via a cleaning water supply system in a cleaning tank containing an object to be cleaned. An ultrasonic cleaning apparatus for supplying cleaning water consisting of: and applying ultrasonic waves to the cleaning water to clean an object to be cleaned, wherein a gas dissolving means is provided in the cleaning water supply path to dissolve gas in the cleaning water. It is characterized by having.
《作用》 本発明では、純水からなる洗浄水に純水はガス溶解手
段によりガスが溶解され、充分な溶存ガスを含む洗浄水
が洗浄槽内に供給されて被洗浄物を超音波洗浄するよう
に作用する。<< Operation >> In the present invention, pure water is dissolved in pure water by gas dissolving means in the cleaning water, and cleaning water containing a sufficient dissolved gas is supplied into the cleaning tank to ultrasonically clean the object to be cleaned. Act like so.
《実施例》 以下、本発明装置の一実施例を添付図面を参照して説
明する。<< Embodiment >> An embodiment of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明装置の概略構成を示すブロック図であ
って、図中１は上部開口形の洗浄槽であり、その底部に
超音波発振器２が設けられている。FIG. 1 is a block diagram showing a schematic configuration of the apparatus of the present invention. In FIG. 1, reference numeral 1 denotes a cleaning tank having an open top, and an ultrasonic oscillator 2 is provided at the bottom thereof.
洗浄槽１の内部下方には洗浄水供給管３が設けられて
いるとともに、その上部開口端の廻りには溢流トラフ４
が設けられている。したがって洗浄水供給管３からの洗
浄水は洗浄槽１内を上向流して溢流トラフ４へ排出する
ように流過することができる。A washing water supply pipe 3 is provided below the inside of the washing tank 1 and an overflow trough 4 is provided around an upper open end thereof.
Is provided. Therefore, the washing water from the washing water supply pipe 3 can flow upward so as to flow upward in the washing tank 1 and discharge to the overflow trough 4.
図中５はガス溶解手段としてのガス溶解槽であって、
その内部にはガス透過膜が張設された多数のガス供給管
6,6…が立設されていて、ガス溶解槽５の底部に設けら
れたガス供給口７からの供給ガスを各ガス供給管6,6…
内を通過させ、ガス溶解槽５の上部に設けられたガス排
出口８から排出できるように構成されている。ガス供給
口７から供給されるガスとしては空気，チッ素ガス，炭
酸ガスその他のガスを供給することができ、このうちか
ら被洗浄物に悪影響を与えないものが選択される。5 is a gas dissolving tank as a gas dissolving means,
Many gas supply pipes with gas permeable membranes stretched inside
Are provided upright, and supply gas from a gas supply port 7 provided at the bottom of the gas dissolving tank 5 is supplied to each gas supply pipe 6, 6,.
It is configured so that the gas can pass through the inside and be discharged from a gas discharge port 8 provided in the upper part of the gas dissolving tank 5. As the gas supplied from the gas supply port 7, air, nitrogen gas, carbon dioxide gas or other gases can be supplied, and among them, a gas which does not adversely affect the object to be cleaned is selected.
ガス溶解槽５の側壁底部には洗浄水としての純水が供
給される入口９が設けられているとともに、その上部に
は出口10が設けられていて、入口９から供給された純水
は各ガス供給管6,6…の外側空間を通過して出口10に達
し、ここから洗浄水供給系路11を介して前述の洗浄水供
給管３へ供給されるように構成されている。At the bottom of the side wall of the gas dissolving tank 5, an inlet 9 to which pure water as cleaning water is supplied is provided, and at the top thereof, an outlet 10 is provided, and the pure water supplied from the inlet 9 is It is configured to pass through the outer space of the gas supply pipes 6, 6,... And reach the outlet 10, from which the water is supplied to the above-mentioned cleaning water supply pipe 3 via the cleaning water supply path 11.
上述の構成からなる本実施例で超音波洗浄を行なうに
は、洗浄槽１内に図示しない適当な支持機構により被洗
浄物（例えば半導体ウエハ）ａを保持し、超音波発振器
２を作動させ、洗浄水供給管３から洗浄水を供給して行
なう。To perform ultrasonic cleaning in this embodiment having the above-described configuration, an object to be cleaned (for example, a semiconductor wafer) a is held in a cleaning tank 1 by a suitable support mechanism (not shown), and an ultrasonic oscillator 2 is operated. The cleaning is performed by supplying cleaning water from the cleaning water supply pipe 3.
この洗浄水供給管３へ供給される洗浄水はガス溶解槽
５で充分にガスが溶解されたものである。すなわちガス
溶解槽５のガス供給口７へ図示しないガス供給源からガ
スを供給しつつ、入口９から図示しない純水製造プロセ
スからの純水を供給すると、ガス供給管6,6…のガス透
過膜を介して純水中にガスが溶解され、出口10からガス
の溶解された純水すなわち洗浄水が排出される。なお、
ガス溶解を高めるためにガス供給管6,6…の内側は所定
圧に維持されている。The cleaning water supplied to the cleaning water supply pipe 3 is one in which gas has been sufficiently dissolved in the gas dissolving tank 5. That is, when gas is supplied from a gas supply source (not shown) to the gas supply port 7 of the gas dissolving tank 5 and pure water from a pure water production process (not shown) is supplied from the inlet 9, gas permeation through the gas supply pipes 6, 6,. The gas is dissolved in the pure water through the membrane, and the pure water in which the gas is dissolved, that is, the cleaning water, is discharged from the outlet 10. In addition,
In order to enhance the gas dissolution, the inside of the gas supply pipes 6, 6,... Is maintained at a predetermined pressure.
出口10から送出された洗浄水は洗浄水供給系路11を介
して洗浄水供給管３へ供給される。このために充分な溶
存ガスを含む洗浄水が洗浄槽１内を上向流し、この際、
超音波が付加されると、被洗浄物ａの表面でキャビテー
ションが効果的に発生する。このキャビテーションの衝
撃力によって被洗浄物ａの表面に付着している化学薬品
等の異物が効率よく除去される。The washing water sent out from the outlet 10 is supplied to the washing water supply pipe 3 via the washing water supply line 11. For this purpose, washing water containing sufficient dissolved gas flows upward in the washing tank 1,
When the ultrasonic waves are applied, cavitation is effectively generated on the surface of the object a to be cleaned. Foreign substances such as chemicals adhering to the surface of the object to be cleaned a are efficiently removed by the impact force of the cavitation.
以下に、溶存ガスの濃度割合による洗浄効果の違いを
第２図のグラフを参照して説明する。Hereinafter, the difference in the cleaning effect depending on the concentration ratio of the dissolved gas will be described with reference to the graph of FIG.
この図は、洗浄水供給管３から毎分5lの洗浄水（純
水）を供給するとともに、超音波発振器２から200KHzの
超音波を送出し、10分間の洗浄を行なったときの粒子除
去率（洗浄率）を示している。This figure shows that 5 l of cleaning water (pure water) per minute is supplied from the cleaning water supply pipe 3, and 200 KHz ultrasonic waves are transmitted from the ultrasonic oscillator 2, and the particle removal rate when the cleaning is performed for 10 minutes. (Cleaning rate).
なお、被洗浄物として４インチ半導体ウエハの表面に
0.2μｍのポリスチレンラテックスを200〜300個付着さ
せたものが用いられている。The object to be cleaned is on the surface of a 4-inch semiconductor wafer.
What has attached 200-300 polystyrene latex of 0.2 micrometer is used.
この図から明らかなように溶存ガス（酸素）の濃度が
8ppm以上では95％以上の除去率が得られ優れた洗浄効果
が得られることがわかる。As is clear from this figure, the concentration of dissolved gas (oxygen)
It can be seen that a removal rate of 95% or more is obtained at 8 ppm or more, and an excellent cleaning effect is obtained.
なお、上述の実施例ではガス溶解手段としてガス透過
膜を内蔵した膜式の例を示したが、これに限らず液体に
ガスを溶解させることのできる周知のガス溶解手段を使
用することができる。例えば、加圧溶解、あるいはガス
吹込み式等を採用することができる。Note that, in the above-described embodiment, a film-type example in which a gas permeable membrane is incorporated as a gas dissolving means is shown. However, the present invention is not limited to this, and a known gas dissolving means capable of dissolving a gas in a liquid can be used. . For example, pressure melting, gas blowing or the like can be employed.
《効果》 本発明は、上述のように純水からなる洗浄水にガスを
溶解させて超音波洗浄を行なうように構成したので、洗
浄時にキャビテーションを効果的に発生させることがで
きる。したがって、キャビテーションの衝撃力により被
洗浄物を効率よく洗浄することができる。<< Effect >> As described above, the present invention is configured to perform ultrasonic cleaning by dissolving a gas in cleaning water made of pure water, so that cavitation can be effectively generated at the time of cleaning. Therefore, the object to be cleaned can be efficiently cleaned by the impact force of the cavitation.
第１図は本発明装置の一実施例を示すブロック図および
第２図は洗浄効果を示すグラフである。 １…洗浄槽 ２…超音波発振器 ３…洗浄水供給管 ５…ガス溶解槽（ガス溶解手段） 11…洗浄水供給系路 ａ…被洗浄物FIG. 1 is a block diagram showing an embodiment of the apparatus of the present invention, and FIG. 2 is a graph showing a cleaning effect. DESCRIPTION OF SYMBOLS 1 ... Cleaning tank 2 ... Ultrasonic oscillator 3 ... Cleaning water supply pipe 5 ... Gas dissolving tank (gas dissolving means) 11 ... Cleaning water supply system a.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 真下 紀義 神奈川県川崎市幸区小向東芝町１ 株式 会社東芝総合研究所内 (56)参考文献 特開 昭63−10529（ＪＰ，Ａ) 特開 昭64−4285（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/304 B08B 3/12──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Noriyoshi Mashimo 1 Toshiba Research Institute, Komukai Toshiba-cho, Kawasaki-shi, Kanagawa Prefecture (56) References JP-A-63-10529 (JP, A) JP-A Sho 64-4285 (JP, A) (58) Field surveyed (Int. Cl. 6 , DB name) H01L 21/304 B08B 3/12
Claims (1)
給系路を介して純水からなる洗浄水を供給し、該洗浄水
に超音波を付加して被洗浄物を洗浄する超音波洗浄装置
において、 前記洗浄水供給系路にガス溶解手段を設けて洗浄水にガ
スを溶解させたことを特徴とする超音波洗浄装置。A cleaning water comprising pure water is supplied to a cleaning tank containing a cleaning object through a cleaning water supply system, and an ultrasonic wave is applied to the cleaning water to wash the cleaning object. An ultrasonic cleaning apparatus, wherein a gas dissolving means is provided in the cleaning water supply system to dissolve a gas in the cleaning water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24477888A JP2821887B2 (en) | 1988-09-29 | 1988-09-29 | Ultrasonic cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24477888A JP2821887B2 (en) | 1988-09-29 | 1988-09-29 | Ultrasonic cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0291922A JPH0291922A (en) | 1990-03-30 |
| JP2821887B2 true JP2821887B2 (en) | 1998-11-05 |
Family
ID=17123781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24477888A Expired - Lifetime JP2821887B2 (en) | 1988-09-29 | 1988-09-29 | Ultrasonic cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2821887B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2603020B2 (en) * | 1991-01-28 | 1997-04-23 | 株式会社東芝 | Method and apparatus for cleaning semiconductor wafer |
| JP2008135790A (en) * | 1996-07-05 | 2008-06-12 | Toshiba Corp | Cleaning method and cleaning method of electronic component |
| US5800626A (en) * | 1997-02-18 | 1998-09-01 | International Business Machines Corporation | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates |
| US6167891B1 (en) * | 1999-05-25 | 2001-01-02 | Infineon Technologies North America Corp. | Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers |
-
1988
- 1988-09-29 JP JP24477888A patent/JP2821887B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0291922A (en) | 1990-03-30 |
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