JP2008124203A - Cleaning apparatus - Google Patents

Cleaning apparatus Download PDF

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JP2008124203A
JP2008124203A JP2006305577A JP2006305577A JP2008124203A JP 2008124203 A JP2008124203 A JP 2008124203A JP 2006305577 A JP2006305577 A JP 2006305577A JP 2006305577 A JP2006305577 A JP 2006305577A JP 2008124203 A JP2008124203 A JP 2008124203A
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water
cleaning
gas
shell
cleaning apparatus
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Hiroshi Morita
博志 森田
Hiroto Tokoshima
裕人 床嶋
Junichi Ida
純一 井田
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Kurita Water Industries Ltd
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Kurita Water Industries Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a cleaning apparatus which can improve the cleaning efficiency when cleaning substrates, etc., using gas dissolution water. <P>SOLUTION: Gas is dissolved in water by a gas dissolution equipment 1, the gas dissolution water is introduced into a cleaning tub 4 which is a shell body, the substrates S, etc., as cleaning objects are cleaned. The gas dissolution water from the gas dissolution equipment 1 is introduced into the cleaning tub 4 through a piping 2 and a water pressure regulating valve 3. By being decompressed by the water pressure regulating valve 3, fine air bubbles arise in large quantity in the gas dissolution water introduced into the cleaning tub 4. By this water containing fine bubbles, the substrates are efficiently cleaned. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、電子基板などの被洗浄物をガス溶解水で洗浄するための洗浄装置に関する。   The present invention relates to a cleaning apparatus for cleaning an object to be cleaned such as an electronic substrate with gas-dissolved water.

半導体基板などを洗浄する方法としてオゾン、酸素、水素などのガスを溶解させたガス溶解水を用いることは周知である。   As a method for cleaning a semiconductor substrate or the like, it is well known to use gas-dissolved water in which a gas such as ozone, oxygen, or hydrogen is dissolved.

例えば、特開平11−77021号では水素溶解水を用いており、特開2000−279902では酸素溶解水を用いており、特開2002−23386ではオゾンの溶解水を用いており、特開2004−281894では水素及び窒素の溶解水を用いている。   For example, Japanese Patent Application Laid-Open No. 11-77021 uses hydrogen-dissolved water, Japanese Patent Application Laid-Open No. 2000-279902 uses oxygen-dissolved water, Japanese Patent Application Laid-Open No. 2002-23386 uses dissolved ozone water, In 281894, dissolved water of hydrogen and nitrogen is used.

洗浄方式としては、槽内に基板を浸積する方式、ノズルから洗浄液を基板に向かって噴射する方式、基板の一方の面に液供給ノズルと液吸引ノズルとを対峙させる方式(特許3511441)など様々のものがある。
特開平11−77021 特開2000−279902 特開2002−23386 特開2004−281894 特許3511441
As a cleaning method, a method in which a substrate is immersed in a tank, a method in which a cleaning liquid is sprayed from a nozzle toward the substrate, a method in which a liquid supply nozzle and a liquid suction nozzle are opposed to one surface of the substrate (Patent 3511441), etc. There are various things.
JP-A-11-77021 JP 2000-279902 A JP2002-23386 JP 2004-281894 A Patent 3511441

本発明は、ガス溶解水を用いて基板等を洗浄する場合の洗浄効率を向上させることができる洗浄装置を提供することを目的とする。   An object of this invention is to provide the washing | cleaning apparatus which can improve the washing | cleaning efficiency at the time of wash | cleaning a board | substrate etc. using gas solution water.

本発明の洗浄装置は、ガスを加圧溶解させた加圧水によって被洗浄物を洗浄する洗浄装置において、該加圧水を製造するガス溶解装置と、該ガス溶解装置からの加圧水を導く配管と、該配管から加圧水が導入部を介して導入される室を有し、該室に被洗浄物を収容するか又は該室内を被洗浄物に露呈させる開口が設けられている殻体と、該殻体の加圧水導入部又はその直近の前記配管に設けられた水圧調整弁とを備えてなるものである。   The cleaning apparatus of the present invention is a cleaning apparatus for cleaning an object to be cleaned with pressurized water in which a gas is dissolved under pressure, a gas dissolving apparatus for producing the pressurized water, a pipe for introducing pressurized water from the gas dissolving apparatus, and the pipe Having a chamber into which pressurized water is introduced through an introduction portion, and a chamber in which the object to be cleaned is accommodated or an opening for exposing the chamber to the object to be cleaned is provided, And a water pressure adjusting valve provided in the pressurized water introduction part or the pipe immediately adjacent thereto.

本発明の洗浄装置では、殻体内に導入されるガス溶解水によって被洗浄物の洗浄が行われる。このガス溶解水は、ガスを加圧溶解させるガス溶解装置から配管を介して送られてくるものであるが、殻体又はその直近の配管に設けられた水圧調整弁で水圧を低下させることにより水中に微細気泡が多量に発生する。この微細気泡を多量に含む水が被洗浄物表面に接触することにより、被洗浄物表面の微細微粒子や汚れ成分が該表面から効率よく除去される。   In the cleaning apparatus of the present invention, the object to be cleaned is cleaned with the gas-dissolved water introduced into the shell. This gas-dissolved water is sent through a pipe from a gas-dissolving device that dissolves gas under pressure, but by reducing the water pressure with a water pressure adjusting valve provided in the shell or the nearest pipe. A large amount of fine bubbles are generated in the water. When water containing a large amount of fine bubbles comes into contact with the surface of the object to be cleaned, fine particles and dirt components on the surface of the object to be cleaned are efficiently removed from the surface.

以下、図面を参照して実施の形態について説明する。   Hereinafter, embodiments will be described with reference to the drawings.

第1図は本発明の実施の形態に係る洗浄装置の系統図である。この実施の形態では、ガスをガス溶解装置1で水中に溶解させ、ガス溶解水を殻体たる洗浄槽4に導入し、被洗浄物としての基板Sを洗浄している。   FIG. 1 is a system diagram of a cleaning apparatus according to an embodiment of the present invention. In this embodiment, gas is dissolved in water by the gas dissolving apparatus 1, and the gas-dissolved water is introduced into the cleaning tank 4 serving as a shell to clean the substrate S as an object to be cleaned.

ガス溶解装置1は膜式ガス溶解装置であり、ガス透過膜1mによって隔てられた気体室1aと水室1bを備えている。ガスが気体室1aに加圧供給され、水がポンプ(図示略)によって水室1bに通水される。膜1mを透過したガスが、水室1b内の水に溶解し、生じたガス溶解水が配管2及び水圧調整弁3を介して洗浄槽4に導入される。   The gas dissolving device 1 is a membrane gas dissolving device, and includes a gas chamber 1a and a water chamber 1b separated by a gas permeable membrane 1m. Gas is pressurized and supplied to the gas chamber 1a, and water is passed through the water chamber 1b by a pump (not shown). The gas that has permeated through the membrane 1 m is dissolved in the water in the water chamber 1 b, and the generated gas-dissolved water is introduced into the cleaning tank 4 through the pipe 2 and the water pressure adjustment valve 3.

洗浄槽4は槽体の下側に水の導入口4aを有し、上側に排水口4bを備えている。この実施の形態では、この導入口4aに前記水圧調整弁3が取り付けられている。基板Sは、槽体の底面から複数個上方に向って突設された脚台4c上に載置されている。この洗浄槽4は、天蓋部4dを開閉して基板Sを出し入れするよう構成されている。   The washing tank 4 has a water inlet 4a on the lower side of the tank body and a drain outlet 4b on the upper side. In this embodiment, the water pressure adjusting valve 3 is attached to the inlet 4a. The substrate S is placed on a leg base 4c projecting upward from the bottom surface of the tank body. The cleaning tank 4 is configured to open and close the canopy 4d and put the substrate S in and out.

このように構成された洗浄装置においては、ガス溶解装置1から配管2を介して送られてきたガス溶解水が水圧調整弁3で減圧されて洗浄槽4内に導入され、基板Sが洗浄される。洗浄排水は排水口4bから流出する。   In the cleaning apparatus configured as described above, the gas dissolved water sent from the gas dissolving apparatus 1 via the pipe 2 is decompressed by the water pressure adjusting valve 3 and introduced into the cleaning tank 4 to clean the substrate S. The The washing waste water flows out from the drain port 4b.

この水圧調整弁3で減圧されることにより、洗浄槽4内に導入されるガス溶解水中に微細気泡が多量に生じている。この微細気泡含有水が基板Sと接触することにより、基板Sが効率よく洗浄される。洗浄された基板Sは、天蓋部4dを開けて取り出され、次の基板Sが洗浄槽4内に配置され、洗浄される。   By reducing the pressure by the water pressure adjusting valve 3, a large amount of fine bubbles are generated in the gas-dissolved water introduced into the cleaning tank 4. When the fine bubble-containing water comes into contact with the substrate S, the substrate S is efficiently cleaned. The cleaned substrate S is taken out by opening the canopy 4d, and the next substrate S is placed in the cleaning tank 4 and cleaned.

第1図では、基板Sをバッチ式に洗浄槽4に出し入れするようにしているが、コンベヤ等によって搬送することにより、基板Sを連続的に洗浄槽4を通過させるようにしてもよい。   In FIG. 1, the substrates S are put into and out of the cleaning tank 4 in a batch manner. However, the substrates S may be continuously passed through the cleaning tank 4 by being conveyed by a conveyor or the like.

第1図では水圧調整弁3を導入口4aに取り付けているが、配管2の途中のうち導入口4aの直近部位(例えば導入口4aから50mm以内)に水圧調整弁3を設けてもよい。   In FIG. 1, the water pressure adjusting valve 3 is attached to the introduction port 4a. However, the water pressure adjusting valve 3 may be provided in the middle of the pipe 2 at a position closest to the introduction port 4a (for example, within 50 mm from the introduction port 4a).

第1図では、洗浄槽4の天蓋部4dを開閉するようにしているが、第2図のように、洗浄槽7を略上下対称な下半殻7Aと上半殻7Bとの2体で構成し、この上半殻7Bと下半殻7Aとを分離することにより基板Sを出し入れするようにしてもよい。   In FIG. 1, the canopy 4d of the cleaning tank 4 is opened and closed. However, as shown in FIG. 2, the cleaning tank 7 is composed of two bodies, a lower half shell 7A and an upper half shell 7B that are substantially vertically symmetrical. The substrate S may be taken in and out by separating the upper half shell 7B and the lower half shell 7A.

この下半殻7Aは逆円錐形であり、その底部中央に導入口7aが設けられている。この導入口7aに水圧調整弁3が取り付けられており、配管2からのガス溶解水が水圧調整弁3で減圧された後、洗浄槽7内に導入される。この導入された水には多量の微細気泡が含まれており、基板Sが効率よく洗浄される。基板Sは脚台7c上に載置されている。   The lower half shell 7A has an inverted conical shape, and an introduction port 7a is provided at the bottom center. A water pressure adjusting valve 3 is attached to the introduction port 7 a, and the gas dissolved water from the pipe 2 is reduced in pressure by the water pressure adjusting valve 3 and then introduced into the cleaning tank 7. The introduced water contains a large amount of fine bubbles, and the substrate S is efficiently cleaned. The board | substrate S is mounted on the leg stand 7c.

上半殻7Bは正円錐形であり、その上部中央に排水口7bが設けられている。   The upper half shell 7B has a regular conical shape, and a drain port 7b is provided at the upper center.

第3図(a)は別の実施の形態に係る洗浄装置の系統図、第3図(b)はそのノズル部分の拡大図である。   FIG. 3A is a system diagram of a cleaning apparatus according to another embodiment, and FIG. 3B is an enlarged view of the nozzle portion.

この実施の形態でも、ガス溶解装置1で製造されたガス溶解水が配管2を介して水圧調整弁3に送られる。この実施の形態では、水圧調整弁3は殻体としてのノズル5の導入口5aに取り付けられている。このノズル5は、底面部分が開放した無底容器形状(下向きカップ状)のものであり、導入口5aはノズル5の天蓋部分に設けられている。   Also in this embodiment, the gas-dissolved water produced by the gas-dissolving device 1 is sent to the water pressure adjusting valve 3 via the pipe 2. In this embodiment, the water pressure adjusting valve 3 is attached to the inlet 5a of the nozzle 5 as a shell. The nozzle 5 has a bottomless container shape (downward cup shape) with an open bottom portion, and the introduction port 5 a is provided in the canopy portion of the nozzle 5.

ノズル5の下側に被洗浄物としての基板Sが配置されており、ノズル5の下端5bと基板Sとの間に若干(例えば1〜3mm程度)の間隙があいている。この間隙が微小であるため、導入口5aから導入された水によってノズル5内は満水状態となっている。   A substrate S as an object to be cleaned is disposed below the nozzle 5, and a slight gap (for example, about 1 to 3 mm) is provided between the lower end 5 b of the nozzle 5 and the substrate S. Since this gap is minute, the inside of the nozzle 5 is filled with water introduced from the inlet 5a.

この実施の形態でも、水圧調整弁3によってガス溶解水が減圧されることにより洗浄水中に微細気泡が多量に生じ、この微細気泡含有水によって基板Sが効率よく洗浄される。洗浄水は、ノズル5の下端5bと基板Sとの間の間隙を通り抜けた後、基板Sの上面を伝わって流れ落ちる。   Also in this embodiment, a large amount of fine bubbles are generated in the cleaning water by reducing the pressure of the gas-dissolved water by the water pressure adjusting valve 3, and the substrate S is efficiently cleaned by the water containing fine bubbles. The cleaning water passes through the gap between the lower end 5 b of the nozzle 5 and the substrate S, and then flows down along the upper surface of the substrate S.

なお、このような下向きカップ状のノズル5を用いて基板Sを洗浄する場合、基板Sが円板状であるときには、第4図のように基板Sをターンテーブル9上に載せ、基板Sをその中心回りにθ方向に回転させると共に、ノズル5を基板Sの半径方向rに移動、例えば1回又は複数回往復移動させるようにしてもよい。   When the substrate S is cleaned using such a downward cup-shaped nozzle 5, when the substrate S is disk-shaped, the substrate S is placed on the turntable 9 as shown in FIG. While rotating in the θ direction around the center, the nozzle 5 may be moved in the radial direction r of the substrate S, for example, reciprocated once or a plurality of times.

本発明では、第5図のようにノズル5の上部にガス排出口5dを設け、ガス排出弁5eを介してガスをノズル5外に流出させるようにしてもよい。これにより、ノズル5内を満水状態に保ち、極めて効率よく基板洗浄を行うことが可能となる。   In the present invention, as shown in FIG. 5, a gas discharge port 5d may be provided in the upper part of the nozzle 5, and the gas may flow out of the nozzle 5 through the gas discharge valve 5e. As a result, the inside of the nozzle 5 can be kept full and the substrate can be cleaned very efficiently.

第6図は殻体として下向きカップ状の洗浄器6を用いた洗浄装置の該洗浄器部分の断面図である。   FIG. 6 is a cross-sectional view of the cleaning device portion of the cleaning device using the downward cup-shaped cleaning device 6 as a shell.

この洗浄器6は、底部が開放し、この底部に基板Sが挿入される。洗浄器6の上部に導入口6aが設けられ、この導入口6aに水圧調整弁3が取り付けられている。ガス溶解装置からのガス溶解水がこの水圧調整弁3を介して洗浄器6内に導入される。基板Sの外周面と洗浄器6の側周壁6bの下部との間には若干間隙があいている。この間隙が微小であるため、洗浄器6内が満水状態となる。   The bottom of the cleaning device 6 is opened, and the substrate S is inserted into the bottom. An introduction port 6a is provided in the upper part of the cleaning device 6, and the water pressure adjusting valve 3 is attached to the introduction port 6a. Gas-dissolved water from the gas-dissolving device is introduced into the cleaning device 6 through the water pressure adjusting valve 3. There is a slight gap between the outer peripheral surface of the substrate S and the lower portion of the side peripheral wall 6b of the cleaning device 6. Since the gap is very small, the inside of the cleaning device 6 becomes full.

この実施の形態でも、配管2からのガス溶解水が水圧調整弁3で減圧され、微細気泡を多量に含んだ水となり、この微細気泡含有水によって基板Sが効率よく洗浄される。洗浄排水は、基板Sの外周と側周壁6bとの間隙を通って下方へ流出する。   Also in this embodiment, the gas-dissolved water from the pipe 2 is depressurized by the water pressure regulating valve 3 to become water containing a large amount of fine bubbles, and the substrate S is efficiently cleaned with the fine bubble-containing water. The cleaning waste water flows downward through the gap between the outer periphery of the substrate S and the side peripheral wall 6b.

なお、基板Sは支持部材8によって支持されている。   The substrate S is supported by the support member 8.

第7図は本発明のさらに別の実施の形態に係る洗浄装置のノズル部分の断面図である。   FIG. 7 is a sectional view of a nozzle portion of a cleaning apparatus according to still another embodiment of the present invention.

このノズル10は、下向きカップ状であり、上部の導入口10aに水圧調調整弁3が取り付けられ、配管2からのガス溶解水が該水圧調整弁3で減圧された後、ノズル10内に導入される。   This nozzle 10 has a downward cup shape, and a water pressure adjusting valve 3 is attached to the upper inlet 10a, and the gas dissolved water from the pipe 2 is introduced into the nozzle 10 after being depressurized by the water pressure adjusting valve 3. Is done.

このノズル10の側周及び上側を覆うようにカバー11が設けられている。このカバー11も下向きカップ状であり、ノズル10の外周囲との間に所定の間隔があいている。カバー11の上部には吸引口11aが設けられ、配管12を介して吸引ポンプ13が接続されている。カバー11の下端11bは、ノズル10の下端10bと面一状となっている。   A cover 11 is provided so as to cover the side periphery and the upper side of the nozzle 10. This cover 11 also has a downward cup shape, and a predetermined interval is provided between the outer periphery of the nozzle 10. A suction port 11 a is provided in the upper part of the cover 11, and a suction pump 13 is connected via a pipe 12. The lower end 11 b of the cover 11 is flush with the lower end 10 b of the nozzle 10.

このノズル下端5b及びカバー下端11bに、所定の間隙を介して対面するように基板Sが配置される。この間隙が微小であるため、ノズル10内は導入口10aから導入される水で満水状態となる。   The substrate S is disposed on the nozzle lower end 5b and the cover lower end 11b so as to face each other with a predetermined gap. Since this gap is minute, the inside of the nozzle 10 is filled with water introduced from the inlet 10a.

この第7図の洗浄装置においては、配管2からのガス溶解水が水圧調整弁3によって減圧され、多量の微細気泡を含んだ水がノズル10内に導入され、基板Sの上面が洗浄される。この水は、ノズル10の下端10bを回り込んでカバー11内に吸い込まれ、吸引口11a、配管12及び吸引ポンプ13を介して排出される。このため、基板S上に洗浄排水が広がることがない。   In the cleaning apparatus of FIG. 7, the gas-dissolved water from the pipe 2 is depressurized by the water pressure adjusting valve 3, water containing a large amount of fine bubbles is introduced into the nozzle 10, and the upper surface of the substrate S is cleaned. . This water goes around the lower end 10 b of the nozzle 10 and is sucked into the cover 11 and discharged through the suction port 11 a, the pipe 12 and the suction pump 13. For this reason, the cleaning waste water does not spread on the substrate S.

この第7図の洗浄装置においても、前記第3図のように基板Sをターンテーブル上に配置すると共に、ノズル10をターンテーブルの半径方向に移動させることにより、基板Sの上面の全体を洗浄することができる。   Also in the cleaning apparatus of FIG. 7, the entire upper surface of the substrate S is cleaned by disposing the substrate S on the turntable as shown in FIG. 3 and moving the nozzle 10 in the radial direction of the turntable. can do.

また、この第7図の洗浄装置において、ノズル10の径が大きい場合などには、第8図のように、基板Sをノズル10の底部に挿入して洗浄してもよい。この基板Sは支脚15を介してベース14上に配置されている。基板Sの外周面とノズル10の下部内周面との間には若干の間隙があいている。ノズル下端10b及びカバー下端11bとベース14との間には若干の間隙があいている。   In the cleaning apparatus of FIG. 7, when the diameter of the nozzle 10 is large, the substrate S may be inserted into the bottom of the nozzle 10 for cleaning as shown in FIG. The substrate S is disposed on the base 14 via the support legs 15. There is a slight gap between the outer peripheral surface of the substrate S and the lower inner peripheral surface of the nozzle 10. There is a slight gap between the nozzle lower end 10 b and the cover lower end 11 b and the base 14.

水圧調整弁3を介してノズル10内に導入された微細気泡含有水によって基板Sが洗浄され、洗浄排水はノズル下端10bを回り込み、ノズル10とカバー11との間を通り、吸引口11a、配管12、吸引ポンプ13を介して吸引排出される。   The substrate S is cleaned by the water containing fine bubbles introduced into the nozzle 10 through the water pressure adjusting valve 3, and the cleaning wastewater goes around the nozzle lower end 10 b, passes between the nozzle 10 and the cover 11, the suction port 11 a, and the piping 12, suctioned and discharged through the suction pump 13.

上記のガスとしては、窒素、炭酸ガス、アルゴン、ヘリウム、水素、酸素、オゾン、空気、アンモニアなどが例示されるが、これらに限定されない。   Examples of the gas include, but are not limited to, nitrogen, carbon dioxide, argon, helium, hydrogen, oxygen, ozone, air, and ammonia.

水圧調整弁3では、配管2内の水圧の1/2〜1/6程度に減圧するのが好ましい。   In the water pressure regulating valve 3, the pressure is preferably reduced to about 1/2 to 1/6 of the water pressure in the pipe 2.

基板Sとしては、シリコンウェハ、FPD用ガラス基板、フォトマスク、ハードディスクなどが例示される。これらの基板Sは、微細加工が施されているものでもよい。   Examples of the substrate S include a silicon wafer, an FPD glass substrate, a photomask, and a hard disk. These substrates S may be finely processed.

本発明では、ガス溶解装置1に水の冷却装置を設けたり、該ガス溶解装置1に導入される水を冷却する冷却装置を設けてもよい。この冷却装置によって水を冷却することにより、水のガス溶解度が増大する。   In the present invention, a water cooling device may be provided in the gas dissolving device 1 or a cooling device for cooling water introduced into the gas dissolving device 1 may be provided. By cooling the water with this cooling device, the gas solubility of the water is increased.

本発明では、ガス溶解装置1への給水ライン、ガス溶解装置1、配管2又は殻体(洗浄槽4,7、ノズル5,10又は洗浄器6)に洗浄薬品を添加する薬注手段を設けてもよい。このような洗浄薬品としては、アンモニア、アンモニウム化合物、アルカリ金属水酸化物などのアルカリ、塩酸、硝酸、硫酸、フッ酸などの酸、界面活性剤、キレート剤などが例示される。   In the present invention, there is provided a chemical injection means for adding a cleaning chemical to the water supply line to the gas dissolving apparatus 1, the gas dissolving apparatus 1, the pipe 2 or the shell (cleaning tanks 4, 7, nozzles 5, 10 or the cleaning device 6). May be. Examples of such cleaning chemicals include ammonia, ammonium compounds, alkalis such as alkali metal hydroxides, acids such as hydrochloric acid, nitric acid, sulfuric acid, and hydrofluoric acid, surfactants, chelating agents, and the like.

本発明では、殻体に超音波振動器を設け、超音波による洗浄作用を重畳させるようにしてもよい。   In the present invention, an ultrasonic vibrator may be provided on the shell, and the cleaning action by ultrasonic waves may be superimposed.

本発明では、配管2、水圧調整弁3又は殻体にヒータ等の水の加温手段を設け、ガス溶解水を加温するようにしてもよい。これにより、ガス溶解度が低下し、微細気泡の発生量が多くなる。また、温水によって洗浄効果が向上する。ガス溶解水の流通方向は、上,下いずれでもよく、場合によっては左右方向でもよい。   In the present invention, water heating means such as a heater may be provided in the pipe 2, the water pressure adjusting valve 3 or the shell to heat the gas-dissolved water. Thereby, gas solubility falls and the generation amount of a fine bubble increases. Moreover, the washing effect is improved by warm water. The flow direction of the gas-dissolved water may be either upward or downward, and in some cases may be the left-right direction.

実施の形態に係る洗浄装置の系統図である。It is a systematic diagram of the washing | cleaning apparatus which concerns on embodiment. 別の実施の形態に係る洗浄装置のノズル部分の断面図である。It is sectional drawing of the nozzle part of the washing | cleaning apparatus which concerns on another embodiment. 異なる実施の形態を示す系統図と断面図である。It is the systematic diagram and sectional drawing which show different embodiment. 基板の洗浄状態を示す斜視図である。It is a perspective view which shows the washing | cleaning state of a board | substrate. 別の実施の形態のノズル部分の断面図である。It is sectional drawing of the nozzle part of another embodiment. さらに別の実施の形態の洗浄器部分の断面図である。It is sectional drawing of the washing | cleaning device part of another embodiment. さらに別の実施の形態のノズル部分の断面図である。It is sectional drawing of the nozzle part of another embodiment. さらに異なる実施の形態を示す断面図である。It is sectional drawing which shows another embodiment.

符号の説明Explanation of symbols

1 ガス溶解装置
2 配管
3 水圧調整弁
4,7 洗浄槽(殻体)
5,10 ノズル(殻体)
6 洗浄器(殻体)
11 カバー
13 吸引ポンプ
1 Gas dissolving device 2 Piping 3 Water pressure regulating valve 4, 7 Washing tank (shell)
5,10 Nozzle (shell)
6 Washer (shell)
11 Cover 13 Suction pump

Claims (8)

ガスを加圧溶解させた加圧水によって被洗浄物を洗浄する洗浄装置において、
該加圧水を製造するガス溶解装置と、
該ガス溶解装置からの加圧水を導く配管と、
該配管から加圧水が導入部を介して導入される室を有し、該室に被洗浄物を収容するか又は該室内を被洗浄物に露呈させる開口が設けられている殻体と、
該殻体の加圧水導入部又はその直近の前記配管に設けられた水圧調整弁と
を備えてなる洗浄装置。
In a cleaning apparatus that cleans an object to be cleaned with pressurized water in which a gas is dissolved under pressure,
A gas dissolving device for producing the pressurized water;
Piping for introducing pressurized water from the gas dissolving device;
A shell having a chamber into which pressurized water is introduced from the pipe through an introduction portion, and containing an object to be cleaned or exposing the chamber to the object to be cleaned;
A cleaning apparatus comprising a pressurized water introduction part of the shell or a water pressure adjusting valve provided in the pipe immediately adjacent thereto.
請求項1において、前記殻体はその一方の面に前記開口が設けられており、
該開口から流出した水を吸引する吸引部が該開口を取り巻いて設けられていることを特徴とする洗浄装置。
The shell according to claim 1, wherein the opening is provided on one surface of the shell,
A cleaning device, wherein a suction part for sucking water flowing out of the opening is provided around the opening.
請求項2において、該殻体を取り囲むカバーが設けられており、該カバーと前記殻体との間が前記吸引部となっていることを特徴とする洗浄装置。   The cleaning apparatus according to claim 2, wherein a cover that surrounds the shell is provided, and the suction portion is provided between the cover and the shell. 請求項1ないし3のいずれか1項において、前記殻体の下面に前記開口が設けられており、
該殻体の上部に該殻体内のガスを排出するガス排出部が設けられていることを特徴とする洗浄装置。
In any one of Claims 1 thru | or 3, the said opening is provided in the lower surface of the said shell,
A cleaning apparatus, characterized in that a gas discharge part for discharging the gas in the shell is provided on the top of the shell.
請求項1ないし4のいずれか1項において、前記ガス溶解装置又はその上流側に、水の冷却手段が設けられていることを特徴とする洗浄装置。   The cleaning apparatus according to claim 1, wherein water cooling means is provided on the gas dissolving apparatus or upstream thereof. 請求項1ないし5のいずれか1項において、前記配管又はその上流側に洗浄薬品を添加する薬品添加手段が設けられていることを特徴とする洗浄装置。   6. The cleaning apparatus according to claim 1, wherein chemical addition means for adding a cleaning chemical is provided on the pipe or upstream thereof. 請求項1ないし6のいずれか1項において、前記殻体に超音波振動器が設けられていることを特徴とする洗浄装置。   The cleaning apparatus according to claim 1, wherein an ultrasonic vibrator is provided in the shell body. 請求項1ないし7のいずれか1項において、前記殻体又は前記配管に水の加温手段が設けられていることを特徴とする洗浄装置。   8. The cleaning apparatus according to claim 1, wherein a water heating means is provided in the shell or the pipe.
JP2006305577A 2006-11-10 2006-11-10 Cleaning apparatus Pending JP2008124203A (en)

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JP2010153475A (en) * 2008-12-24 2010-07-08 Sokudo Co Ltd Substrate treatment apparatus and substrate treatment method
WO2014118862A1 (en) * 2013-01-29 2014-08-07 信越半導体株式会社 Cleaning method using ozonated water and cleaning apparatus
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JP2019117952A (en) * 2019-04-16 2019-07-18 株式会社ホロン Foreign matter removal device of body to be washed and foreign matter removal method of the same

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* Cited by examiner, † Cited by third party
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JP2010153475A (en) * 2008-12-24 2010-07-08 Sokudo Co Ltd Substrate treatment apparatus and substrate treatment method
WO2014118862A1 (en) * 2013-01-29 2014-08-07 信越半導体株式会社 Cleaning method using ozonated water and cleaning apparatus
JP2016087495A (en) * 2014-10-30 2016-05-23 原嶋 文子 Treatment method of apparatus including pcb
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JP2019117952A (en) * 2019-04-16 2019-07-18 株式会社ホロン Foreign matter removal device of body to be washed and foreign matter removal method of the same

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