JP2789395B2 - Wire bonding method - Google Patents

Wire bonding method

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Publication number
JP2789395B2
JP2789395B2 JP3173398A JP17339891A JP2789395B2 JP 2789395 B2 JP2789395 B2 JP 2789395B2 JP 3173398 A JP3173398 A JP 3173398A JP 17339891 A JP17339891 A JP 17339891A JP 2789395 B2 JP2789395 B2 JP 2789395B2
Authority
JP
Japan
Prior art keywords
capillary
point
bond point
bonding
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3173398A
Other languages
Japanese (ja)
Other versions
JPH04370942A (en
Inventor
邦行 高橋
慎一 熊沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP3173398A priority Critical patent/JP2789395B2/en
Priority to KR1019920010573A priority patent/KR970007598B1/en
Publication of JPH04370942A publication Critical patent/JPH04370942A/en
Application granted granted Critical
Publication of JP2789395B2 publication Critical patent/JP2789395B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は第１ボンド点と第２ボン
ド点との間をワイヤで接続するワイヤボンデイング方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for connecting a first bond point and a second bond point with a wire.

【０００２】[0002]

【従来の技術】ＩＣ等の半導体組立装置の製造工程に、
ワイヤボンデイング工程がある。この工程により、図２
にに示すように、ペレット１のパッド（第１ボンド点）
１ａとリードフレーム２のリード（第２ボンド点）２ａ
にワイヤ３が接続される。2. Description of the Related Art In a manufacturing process of a semiconductor assembly device such as an IC,
There is a wire bonding process. By this step, FIG.
As shown in (1), the pad of the pellet 1 (first bonding point)
1a and lead (second bond point) 2a of lead frame 2
Is connected to the wire 3.

【０００３】前記ワイヤボンデイング工程におけるワイ
ヤボンデイング方法には、種々の方法が提案されている
が、最も一般的な方法を図３に示す。図３において、ま
ず、（ａ）に示すように、キヤピラリ４の下端より延在
するワイヤ３に電気トーチ５による火花放電によってボ
ール３ａを作る。その後、電気トーチ５は矢印方向へ移
動する。次に（ｂ）に示すように、キヤピラリ４は第１
ボンド点１ａの上方に移動する。続いて（ｃ）に示すよ
うに、キヤピラリ４が下降し、ワイヤ３の先端のボール
３ａを第１ボンド点１ａに接続する。その後、（ｄ）に
示すように、キヤピラリ４は上昇する。続いて（ｅ）に
示すように、キヤピラリ４は第２ボンド点２ａの上方に
移動する。次に（ｆ）に示すように、キヤピラリ４が下
降して第２ボンド点２ａにワイヤ３を接続する。その
後、キヤピラリ４が一定の位置へ上昇した後、クランパ
６が閉じ、キヤピラリ４とクランパ６が共に上昇して
（ｇ）に示すようにワイヤ３を切断する。これにより、
１本のワイヤ接続が完了する。なお、この種のワイヤボ
ンデイング方法に関連するものとして、例えば特開昭５
７ー８７１４３号公報、特公平１ー２６５３１号公報等
があげられる。Various methods have been proposed as wire bonding methods in the wire bonding step. The most general method is shown in FIG. In FIG. 3, first, as shown in FIG. 3A, a ball 3 a is formed on a wire 3 extending from a lower end of a capillary 4 by spark discharge using an electric torch 5. Thereafter, the electric torch 5 moves in the direction of the arrow. Next, as shown in (b), the capillary 4 is the first
It moves above the bonding point 1a. Subsequently, as shown in (c), the capillary 4 descends and connects the ball 3a at the tip of the wire 3 to the first bond point 1a. Thereafter, as shown in (d), the capillary 4 rises. Subsequently, as shown in (e), the capillary 4 moves above the second bond point 2a. Next, as shown in (f), the capillary 4 descends to connect the wire 3 to the second bond point 2a. Thereafter, after the capillary 4 is raised to a predetermined position, the clamper 6 is closed, and both the capillary 4 and the clamper 6 are raised, and the wire 3 is cut as shown in FIG. This allows
One wire connection is completed. Japanese Patent Application Laid-Open No. Sho 5 (1988) discloses a method related to this type of wire bonding method.
JP-A-7-87143 and JP-B-1-26531.

【０００４】[0004]

【発明が解決しようとする課題】上記従来技術は、キヤ
ピラリ４を第１ボンド点１ａから第２ボンド点２ａに移
動させる距離Ｌ１（図４参照）は、第１ボンド点１ａと
第２ボンド点２ａとを結ぶ距離Ｌ０に等しい。ところ
で、第１ボンド点１ａへの接続（図３（ｃ）参照）は、
ボール３ａがキヤピラリ４の下端の全周によって押し付
けられて行われる。しかし、第２ボンド点２ａへの接続
は、図４に示すように、キヤピラリ４の第１ボンド点１
ａ側の下面によって行われる。このため、従来技術のよ
うにキヤピラリ４を移動させる距離Ｌ１を第１ボンド点
１ａと第２ボンド点２ａの距離Ｌ０に等しくすると、ワ
イヤ３は第２ボンド点２ａよりΔＬだけ第１ボンド点１
ａ側に接続され、ボンデイング精度が悪い。In the above prior art, the distance L 1 (see FIG. 4 ) for moving the capillary 4 from the first bond point 1a to the second bond point 2a is determined by the distance between the first bond point 1a and the second bond point. equal to the distance L 0 connecting the point 2a. By the way, the connection to the first bond point 1a (see FIG. 3 (c))
The ball 3a is pressed by the entire circumference of the lower end of the capillary 4. However, the connection to the second bond point 2a is made by the first bond point 1 of the capillary 4 as shown in FIG.
This is performed by the lower surface on the a side. Therefore, when equal distances L 1 for moving the capillary 4 as in the prior art the distance L 0 of the first bonding point 1a and the second bonding point 2a, the wire 3 is first bonded only ΔL from the second bonding point 2a Point 1
Connected to a side, poor bonding accuracy.

【０００５】本発明の目的は、高精度のボンデイングが
行えるワイヤボンデイング方法を提供することにある。It is an object of the present invention to provide a wire bonding method capable of performing high-precision bonding.

【０００６】[0006]

【課題を解決するための手段】上記目的を達成するため
の本発明の構成は、第１ボンド点と第２ボンド点との間
をワイヤで接続するワイヤボンデイング方法において、
キヤピラリを第１ボンド点より第２ボンド点に移動させ
る距離を、キヤピラリの下端外周半径寸法にキヤピラリ
の下端穴半径寸法を加えた長さの半分の長さだけ、第１
ボンド点から第２ボンド点までの距離より多く移動させ
て第２ボンド点にワイヤを接続することを特徴とする。According to a first aspect of the present invention, there is provided a wire bonding method for connecting a first bond point and a second bond point with a wire.
The distance to move the capillary from the first bond point to the second bond point is determined by the radius of the outer circumference of the lower end of the capillary.
The length of the first half of the total length of the bottom hole
The wire is connected to the second bond point by moving the wire more than the distance from the bond point to the second bond point.

【０００７】[0007]

【作用】キヤピラリを第１ボンド点から第２ボンド点に
移動させる距離は、キヤピラリの下端外周半径寸法にキ
ヤピラリの下端穴半径寸法を加えた長さの半分の長さだ
け、第１ボンド点から第２ボンド点までの距離より多く
移動させる。これにより、キヤピラリが第２ボンド点上
に移動すると、キヤピラリの第１ボンド点側の下面のボ
ンド面の中心が第２ボンド点に位置する。このため、ボ
ンデイング精度が向上する。The distance by which the capillary is moved from the first bond point to the second bond point is determined by the outer radius of the lower end of the capillary.
It is half the length of the bottom of the capillary plus the radius of the hole
Then , it is moved more than the distance from the first bond point to the second bond point. As a result, when the capillary moves over the second bond point, the center of the bond surface on the lower surface of the capillary on the first bond point side is located at the second bond point. For this reason, the bonding accuracy is improved.

【０００８】[0008]

【実施例】以下、本発明の一実施例を図１により説明す
る。キヤピラリ４を第１ボンド点１ａから第２ボンド点
２ａに移動させてワイヤ３を第２ボンド点２ａに接続す
る。この場合、キヤピラリ４を第１ボンド点１ａから第
２ボンド点２ａに移動させる距離Ｌ２は、第１ボンド点
１ａから第２ボンド点２ａまでの距離Ｌ０よりΔＬ０だ
け長い。ここで、ΔＬ０は、第２ボンド点２ａへのボン
デイング時におけるキヤピラリ４のボンド面のほぼ中心
５からキヤピラリ４の中心６の長さにするか、またはキ
ヤピラリ４の下端外周半径寸法Ｒよりキヤピラリ４の下
端穴半径寸法ｒを引いた長さの半分の長さに下端穴半径
寸法ｒを加えた長さにする。この関係を数式で表すと数
１のようになる。即ち、キヤピラリ４を第１ボンド点１
ａから第２ボンド点２ａに移動させる距離Ｌ ２ は、キヤ
ピラリ４の下端外周半径寸法Ｒにキヤピラリ４の下端穴
半径寸法ｒを加えた長さの半分の長さΔＬ ０ ＝（Ｒ＋
ｒ）／２だけ、第１ボンド点１ａから第２ボンド点２ａ
までの距離Ｌ ０ より多く移動させる。 An embodiment of the present invention will be described below with reference to FIG. The capillary 4 is moved from the first bond point 1a to the second bond point 2a to connect the wire 3 to the second bond point 2a. In this case, the distance L 2 for moving the capillary 4 to the second bonding point 2a from the first bonding point 1a is longer by [Delta] L 0 from the distance L 0 from the first bonding point 1a to the second bonding point 2a. Here, ΔL 0 is set to be substantially equal to the length of the center 6 of the capillary 4 from the center 5 of the bonding surface of the capillary 4 at the time of bonding to the second bonding point 2 a, or to the length of the outer circumference of the capillary 4. 4 is a length obtained by adding the lower end hole radius dimension r to half the length obtained by subtracting the lower end hole radius dimension r. This relationship can be expressed as a number
It looks like 1. That is, the capillary 4 is moved to the first bond point 1
The distance L 2 is moved from a to second bonding point 2a is Canon
The lower end hole of the capillary 4 is formed at the lower end outer radius radius R of the capillary 4.
Half length ΔL 0 = (R +
r) / 2 from the first bond point 1a to the second bond point 2a
Many move than the distance L 0 up.

【数１】(Equation 1) ΔＬΔL ０0 ＝（Ｒ−ｒ）／２＋ｒ＝（Ｒ＋ｒ）／２= (R−r) / 2 + r = (R + r) / 2

【０００９】このように、キヤピラリ４をＬ2 移動させ
ると、キヤピラリ４のボンド面の中心５は第２ボンド点
２ａに一致するので、ボンデイング精度が向上する。な
お、上記実施例は、キヤピラリ４のボンド面が平面の場
合について説明したが、ボンド面が円弧に形成されてい
る場合にも適用できることは勿論である。As described above, when the capillary 4 is moved by L 2 , the center 5 of the bonding surface of the capillary 4 coincides with the second bonding point 2a, so that the bonding accuracy is improved. Although the above embodiment has been described with reference to the case where the bonding surface of the capillary 4 is a plane, it is needless to say that the present invention can be applied to a case where the bonding surface is formed in an arc.

【００１０】[0010]

【発明の効果】本発明によれば、キヤピラリを第１ボン
ド点から第２ボンド点に移動させる距離は、キヤピラリ
の下端外周半径寸法にキヤピラリの下端穴半径寸法を加
えた長さの半分の長さだけ、第１ボンド点から第２ボン
ド点までの距離より多く移動させるので、キヤピラリの
第１ボンド点側の下面のボンド面の中心が第２ボンド点
に位置し、ボンデイング精度が向上する。According to the present invention, the distance to move the the capillary from the first bonding point to the second bonding point, the capillary
Add the radius of the bottom edge of the capillary to the radius of the bottom
The capillary is moved by a half of the obtained length more than the distance from the first bonding point to the second bonding point, so that the center of the bonding surface on the lower surface of the capillary on the first bonding point side is located at the second bonding point. The bonding accuracy is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施例を示す第２ボンド点へのワイ
ヤ接続状態図である。FIG. 1 is a diagram illustrating a wire connection state to a second bond point according to an embodiment of the present invention.

【図２】ワイヤボンデイングされた試料の平面図であ
る。FIG. 2 is a plan view of a wire-bonded sample.

【図３】最も一般的なワイヤボンデイング方法を示し、
（ａ）乃至（ｇ）は工程図である。FIG. 3 shows the most common wire bonding method,
(A) thru | or (g) are process drawings.

【図４】従来例を示す第２ボンド点へのワイヤ接続状態
図である。FIG. 4 is a diagram showing a conventional example in which a wire is connected to a second bond point.

【符号の説明】[Explanation of symbols]

１ａ 第１ボンド点 ２ａ 第２ボンド点 ３ ワイヤ ４ キヤピラリ ５ キヤピラリのボンド面の中心 ６ キヤピラリの中心 Ｌ0 第１ボンド点から第２ボンド点までの距離 Ｌ2 キヤピラリを移動させる距離 ΔＬ0 多く移動させる長さ Ｒ キヤピラリの下端外周半径寸法 ｒ キヤピラリの下端穴半径寸法1a First bond point 2a Second bond point 3 Wire 4 Capillary 5 Center of bond surface of capillary 6 Center of capillary L 0 Distance from first bond point to second bond point L 2 Distance for moving capillary ΔL 0 Move much The length to be made R The outer radius of the lower end of the capillary r The radius of the lower end of the capillary

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 第１ボンド点と第２ボンド点との間をワ
イヤで接続するワイヤボンデイング方法において、キヤ
ピラリを第１ボンド点より第２ボンド点に移動させる距
離を、キヤピラリの下端外周半径寸法にキヤピラリの下
端穴半径寸法を加えた長さの半分の長さだけ、第１ボン
ド点から第２ボンド点までの距離より多く移動させて第
２ボンド点にワイヤを接続することを特徴とするワイヤ
ボンデイング方法。In a wire bonding method for connecting a first bond point and a second bond point with a wire, a distance for moving the capillary from the first bond point to the second bond point is determined by an outer radius of a lower end of the capillary. Under the capillary
A wire bonding method characterized in that the wire is connected to a second bond point by moving the wire by a length that is a half of a length including an end hole radius dimension more than a distance from a first bond point to a second bond point. .
JP3173398A 1991-06-19 1991-06-19 Wire bonding method Expired - Fee Related JP2789395B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3173398A JP2789395B2 (en) 1991-06-19 1991-06-19 Wire bonding method
KR1019920010573A KR970007598B1 (en) 1991-06-19 1992-06-18 Method of awire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3173398A JP2789395B2 (en) 1991-06-19 1991-06-19 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH04370942A JPH04370942A (en) 1992-12-24
JP2789395B2 true JP2789395B2 (en) 1998-08-20

Family

ID=15959677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3173398A Expired - Fee Related JP2789395B2 (en) 1991-06-19 1991-06-19 Wire bonding method

Country Status (2)

Country Link
JP (1) JP2789395B2 (en)
KR (1) KR970007598B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479919B1 (en) * 1997-12-29 2005-05-16 삼성테크윈 주식회사 Wire loop generating method of wire bonding head
JP4530975B2 (en) 2005-11-14 2010-08-25 株式会社新川 Wire bonding method

Also Published As

Publication number Publication date
KR930001363A (en) 1993-01-16
KR970007598B1 (en) 1997-05-13
JPH04370942A (en) 1992-12-24

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