JP2781329B2 - Semiconductor power module and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor power module, and more particularly to an improvement for eliminating deformation of a circuit board due to a temperature change.

[0002]

2. Description of the Related Art A semiconductor power module is an apparatus provided with a circuit for adjusting power supplied to a load by using an active power switching semiconductor element for performing a switching operation. One of the semiconductor power modules further comprising a control circuit having an active semiconductor element for controlling the operation of the main circuit by exchanging signals with the main circuit using the circuit as a main circuit. (Especially called “intelligent power modules”) have also been put to practical use. These semiconductor power modules are mainly applied to inverters for controlling operations of motors and the like.

<Circuit Diagram of Conventional Device> FIG. 12 is a schematic circuit diagram showing a main part of a circuit 110 included in a conventional semiconductor power module 100. The rated output voltage and the maximum output current of the device 100 are 440 V and 100 A, respectively. The frequency of the operation for interrupting and connecting the output current is 10 kHz.

The circuit 110 comprises two circuit parts 120, 1
30. The main circuit 120 is a circuit part that outputs the adjusted power to the load. Two power terminals PS
DC high potential P and low potential N are applied to (P) and PS (N) from an external power supply (not shown), respectively. That is, power is supplied from an external power supply to the main circuit 120 through the power supply terminals PS (P) and PS (N).
The main circuit 120 includes six IGBT elements (insulated gate bipolar transistors) T1 to T6 which are active elements for power control. The IGBT element is a type of power switching semiconductor element that repeatedly cuts off and connects a current supplied to a load. These I
The GBT elements T1 to T6 convert the input power into U, V, W
And the controlled power is controlled by three output terminals OUT (U), OUT (V), and OU, respectively.
Output to the load through T (W). IGBT element T1
When a reverse voltage is applied to the IGBT elements T1 to T6, the freewheel diodes D1 to D6 for bypassing the load current and protecting the IGBT elements T1 to T6 are different from each other.
To T6 in parallel.

[0005] The control circuit 130 includes IGBT elements T1 to T
6 is a circuit part for controlling the operation of FIG. The control circuit 130 includes six active semiconductor elements IC1 to IC6. These semiconductor devices IC1~IC6, in response to the input signal V _IN 1 to V _IN 6 which are input from the outside to the signal input terminal IN1～IN6, IGBT element T1~T6
To delivery a gate voltage signal V _G 1 to V _G 6 to the gate G. IGBT element T1~T6 responds V _G 1 to V _G 6 to these gate voltage signals, the collector C and the emitter E
Between the current and the connection.

[0006] power supply terminal V _CC 1 to V _CC 4 four independent external direct current voltage source (not shown), the high potential side (positive)
When, by connecting to each pair of 1 between power supply terminal V _EE 1 to V _EE 4 on the low potential side (negative), a DC voltage is supplied to the semiconductor device IC1~IC6 through these power terminals.
Negative power supply terminal V _EE 1 to V _EE 3 is, IGBT element T1~T
3 in electrical emitter E are respectively connected, the negative power supply terminal V _EE 4 is connected to the emitter E of the IGBT elements T4~T6 a common potential.

The main circuit 120 is a circuit through which a relatively large current flows, and is designed to withstand a large current and heat generated by the large current. On the other hand, since the control circuit 130 is a circuit that processes a voltage signal, the current flowing through the circuit is very small. Therefore, the control circuit 130 does not design a circuit corresponding to the large current.

<Appearance of Apparatus 100> FIG.
FIG. The device 100 includes a case 101 made of an insulator such as a synthetic resin, and a lid 102 is provided on an upper surface of the case 101. Main circuit 1
20 terminal 103 and the control circuit 130 terminal 104
It is exposed outside the upper surface of the case 101. In these terminals, the same parts as those in the circuit diagram of FIG. 12 are denoted by the same reference numerals.

<Arrangement of Circuit Elements of Main Circuit 120> FIG.
FIG. 3 is a plan view of a circuit board 121 of a main circuit housed in a predetermined position of a case 101. The circuit board 121 includes four circuit board main bodies 121a to 121d. These circuit board bodies 121 a to 121 d are arranged on the upper surface of a plate-shaped copper base 122 constituting the bottom surface of the case 101. On the circuit board main bodies 121a and 121b,
IGBT elements T1 to T6, and freewheel diodes D1 to D which are passive circuit elements associated with each of them.
6, and a wiring pattern. Wiring patterns P (P), P (N), P (U), P (V), and P
(W) indicates a high potential P, a low potential N, a U-phase output, V
It is a wiring pattern of a phase output and a W-phase output. These wiring patterns have a width and a thickness sufficient to allow a large current to pass. Each wiring pattern has a corresponding power supply terminal PS (P), P
S (N), output terminals OUT (U), OUT (V), OU
T (W).

The circuit board bodies 121c and 121d are IG
It is a main body of a circuit board that relays between the BT elements T1 to T6 and the control circuit 130. In the wiring patterns formed on these circuit board bodies, the wiring patterns P (E
1) to P (E6) are respectively connected to the emitters E of the IGBT elements T1 to T6, and the wiring patterns P (G1) to P (E6)
(G6) are connected to the gates G of the IGBT elements T1 to T6, respectively. Each of the IGBT elements T1 to T6 has a detection circuit that detects the magnitude of the current (collector current) flowing through the collector C of each of these elements and sends out a voltage signal corresponding to the collector current. Wiring pattern P (S1)
To P (S6) are connected to the detection circuits of the IGBT elements T1 to T6, respectively, and transmit detection signals of the collector current. The wiring pattern P (EX) is a wiring pattern that transmits other signals.

Each of these wiring patterns is connected to one end of each of a plurality of conductor pins (to be described later) connected to the control circuit 130 at the hatched portions drawn respectively.
That is, these wiring patterns are electrically connected to the control circuit 130 via the conductor pins. The elements described above or between the elements and the wiring pattern are appropriately electrically connected by a large number of conductor wires w.

<Arrangement of Circuit Elements of Control Circuit 130> FIG.
5 is a plan view of a circuit board 131 of the control circuit 130. The control circuit 130 is deployed on a substrate separate from the substrate of the main circuit 120 that generates a large amount of heat. Circuit board 13
On the semiconductor device 1, there are provided active semiconductor elements IC1 to IC7, various passive circuit elements EL associated with each of them, and wiring patterns. The semiconductor element IC
7 is provided for a purpose different from the semiconductor elements IC1 to IC6.

The circuit board 131 is provided with through-holes connected to the wiring pattern, and the other end of the above-described conductor pin is connected to these through-holes. Through these conductor pins, through holes TH (E1) to
TH (E6), TH (G1) to TH (G6), TH (S
1) to TH (S6) and TH (EX) are the aforementioned wiring patterns P (E1) to P (E6) and P (G1) to P (G
6), P (S1) to P (S6), and P (EX). The circuit board 131 is provided with terminals 104 connected to the wiring pattern and further to the above-described external power supply or the like.

<Cross-Sectional Structure of Apparatus 100> FIG.
00 is a front sectional view of FIG. Circuit board 131 and circuit board 1
21 are arranged above and below the apparatus 100 so as to face each other. As described above, the plurality of conductor pins PI
Accordingly, the circuit on the circuit board 121 and the circuit on the circuit board 131 are appropriately electrically connected. The circuit board main bodies 121a and 121b on which the IGBT elements T1 to T6 that generate a large amount of heat are arranged are made of a heat-resistant and electrically insulating ceramic such as aluminum oxide (Al2 O3) or aluminum nitride (AlN). The bottom surface is entirely covered with a copper thin plate CF.
By soldering the surface of the copper thin plate CF to the upper surface of the copper base 122, the circuit board main bodies 121a, 121b
Are fixed to the copper base 122. Copper wiring patterns such as wiring patterns P (N) and P (W) are formed on the upper surface of the circuit board 121, and circuit elements such as IGBT elements T3 and T6 are soldered on the upper surface. . Both the wiring pattern and the copper thin plate CF are metallized and connected to the circuit board main bodies 121a and 121b. These substrates formed by metallization bonding are called DBC substrates. In the DBC board, the thicknesses of the insulating circuit board bodies 121a and 121b, the thin copper plate CF, and the wiring pattern are, for example, 0.635 mm, 0.2 mm, and 0.3 mm, respectively.

The copper base 122 occupying substantially the entire bottom surface of the device 100 is provided mainly for heat dissipation. That is, by mounting the device 100 such that the copper base 122 comes into contact with a heat radiation plate or the like provided outside, the heat loss generated in the main circuit 120 is reduced.
The heat is released to an external heat radiating mechanism such as a heat radiating plate through the heat sink 2, thereby preventing the temperature of the main circuit 120 and the control circuit 130 from excessively rising.

The lid 102 has a main body made of an electrical insulator such as a synthetic resin, and a copper sheet 105 is adhered to a substantially entire lower surface thereof. An internal space 109 surrounded by the copper base 122, the case 101, and the lid 102 is filled with a silicone resin and an epoxy resin for the purpose of protecting circuit elements. That is, the vicinity of the DBC substrate, the power supply terminals PS (P), PS (N), and the conductor pins P
Silicon resin is filled in an S-shaped portion (S bend portion) such as I, and an epoxy resin is filled in other internal spaces.

[0017]

<Problems of Conventional Device> In a conventional semiconductor power module, as described above,
A DBC substrate on which circuit elements that generate heat such as IGBT elements T1 to T6 are arranged is soldered to copper base 122. The thermal expansion coefficients of aluminum oxide and aluminum nitride are 7.3 μ / deg and 4.7 μ / deg, respectively, while the copper base 122 has a thermal expansion coefficient of 16.6 μ / deg. In other words, there is a considerable difference in the magnitude of the thermal expansion coefficient between the insulating substrate body that governs the thermal expansion phenomenon of the DBC substrate and the copper base 122. At the temperature at the time when both are soldered, that is, at the melting point temperature of the solder, both have zero thermal strain.
After the soldering is completed, when the temperature drops to room temperature, thermal distortion occurs in each of the two due to the so-called bimetal effect caused by the difference in the thermal expansion coefficient. As a result, at room temperature, the DBC substrate and the copper base 122
, Bending deformation occurs so that the DBC substrate side becomes convex. If the temperature at which the device is used is lower, the bending deformation becomes more pronounced, and if it is higher, the deformation becomes looser. In general, the amount of heat generated in the IGBT elements T1 to T6 and the like changes with the use of the device, but the temperature changes accordingly, and the magnitude of the bending deformation changes. The displacement in each part of the DBC substrate and the copper base 122 due to the change in the amount of bending deformation reaches about 300 μm in the part where the displacement is the largest.

When the internal stress exceeds the breaking strength due to bending deformation, the DBC substrate may be broken.
Further, when the temperature change is repeated, stress is repeatedly generated inside, so that the DBC substrate may cause fatigue failure. As described above, the conventional device has a problem that the DBC substrate may be broken by the bimetal effect.

Further, since the semiconductor elements IC1 to IC7 constituting the control circuit 130 are required to have high operational reliability, a large displacement DBC substrate or copper base 1 is required.
22 cannot be arranged on a substrate fixed to 22. FIG.
As shown in FIG. 6, in the conventional device, the semiconductor device I
The circuit board 131 on which the C1 to IC7 and the like are arranged is spatially separated from the circuit board 121 soldered to the copper base 122 so that both boards have a “two-story” structure. One is for this reason. Since the conventional device has a two-story structure, there is a problem that the structure is complicated and the manufacturing cost is high.

Also, since the circuit board 121 is displaced,
Terminals connected to the main circuit 120, such as the conductor pin PI and the power supply terminals PS (P) and PS (N), have an S-bend structure so as to follow the displacement. The S-bend structure must not be hindered from deformation by surrounding fillers in contact therewith. Therefore, it is necessary to protect the periphery of the S-bend structure with the soft silicone resin that absorbs stress as described above. This also causes a problem that the structure of the device is complicated and the manufacturing cost is high.

In recent years, improvements have been made in the IGBT elements T1 to T6, and elements which can operate at a high frequency of 50 kHz are appearing. However, in the conventional device, since the terminals connected to the main circuit 120 have the S-bend structure, the reactance of these terminals is large, and the IGBT elements T1 to T
6 has a problem that the high-speed switching operation is disturbed.

Further, in the conventional apparatus, the distance between the circuit board 121 and the circuit board 131 needs to be longer than a certain degree due to the S-bend structure, and therefore, the height of the apparatus must be higher than a certain degree. Absent. That is, the conventional apparatus has a problem that it hinders realization of downsizing, which is one of the strong demands in the market.

<Object of the Invention> The present invention has been made in order to solve the above-mentioned problems, and there is no destruction of a power substrate, the structure is simpler, it can be manufactured at a low cost, and a high-speed It is an object of the present invention to obtain a semiconductor power module realizing miniaturization and miniaturization, and to provide a manufacturing method suitable for this device.

[0024]

According to a first aspect of the present invention, a power switching semiconductor element which repeats interruption and connection of a current supplied to a load in response to a control signal is a box-shaped envelope. It is intended for semiconductor power modules housed in the company.

The bottom portion of the envelope is provided so as to be connected to a power substrate main body containing a heat-resistant insulating material and on an upper main surface of the power substrate main body, and the power switching semiconductor element is provided. And a power wiring pattern having good thermal and electrical conductivity to be connected thereto, and a heat wiring having a material substantially the same as that of the power wiring pattern, the bonding being disposed on the lower main surface of the power substrate main body. A power board formed integrally with a plate having good conductivity, wherein the plate is exposed on a lower surface of the envelope.

According to a second aspect of the present invention, in the semiconductor power module of the first aspect, the heat-resistant insulating material is ceramic. The power wiring pattern is substantially made of a copper material, and is disposed on the upper main surface of the power substrate main body by metallizing. Further, the plate material is substantially made of a copper material, and is disposed on the lower main surface of the power substrate main body by metallizing.

According to a second aspect of the present invention, in the semiconductor power module of the first aspect, the bottom portion of the envelope has a control substrate main body substantially made of an insulator, and an upper main surface of the control substrate main body. A control wiring pattern having good electrical conductivity connected to a control circuit element for generating the control signal and supplying the control signal to the power switching semiconductor element; And a control board having a rigid plate-shaped pressing member.

The control board is disposed around the power board and is engaged with an edge of the power board.

According to a fourth aspect of the present invention, in the semiconductor power module of the third aspect, the bottom portion of the envelope is provided around the power substrate and abuts on an outer peripheral edge of the power substrate. A plate-shaped spacer having a peripheral edge and being in contact with a lower main surface of the control board is further provided.

According to a fifth aspect of the present invention, in the semiconductor power module of the fourth aspect, the thickness of the power wiring pattern and the thickness of the plate material are adjusted so that the power substrate does not warp and deform with a change in temperature. The ratio has been adjusted.

According to a sixth aspect of the present invention, in the semiconductor power module of the fourth aspect, the spacer has elasticity, and a lower main surface of the spacer is located on substantially the same plane as a lower main surface of the plate material. I have.

According to a seventh aspect of the present invention, in the semiconductor power module of the fourth aspect, the spacer has elasticity, and a lower main surface of the spacer projects below a lower main surface of the plate member.

According to an eighth aspect of the present invention, in the semiconductor power module according to the fourth aspect, the lower main surface of the plate material projects below the lower main surface of the spacer.

According to a ninth aspect of the present invention, in the semiconductor power module of the fourth aspect, the power substrate is disposed on an upper edge of the upper main surface of the power substrate main body, and the power substrate is provided on the control substrate. The abutment member further includes an abutment member that substantially abuts on the metal.

According to a tenth aspect of the present invention, in the semiconductor power module of the fourth aspect, the pressing member includes a metal plate.

According to an eleventh aspect of the present invention, in the semiconductor power module of the fourth aspect, the control substrate includes:
An opening penetrating the center of the main surface is formed,
The power substrate is located in the opening.

According to a twelfth aspect of the present invention, in the semiconductor power module of the eleventh aspect, the upper main surface of the power substrate located at the opening is present below the upper main surface of the control substrate, In the opening, a precoat resin that covers the power switching element is provided.

According to a thirteenth aspect of the present invention, in the semiconductor power module according to the twelfth aspect, the inner peripheral edge of the spacer is in contact with the outer peripheral edge of the power substrate via a flexible adhesive. In contact.

According to a fourteenth aspect of the present invention, in the semiconductor power module of the fourth aspect, the upper main surface of the spacer is
The spacer and the control substrate are fixed to each other in contact with a lower main surface of the control substrate.

According to a fifteenth aspect of the present invention, in the semiconductor power module according to the fourth aspect, an upper main surface slidably provided on a lower main surface of the plate member is provided so as to contact below the bottom of the envelope. It further comprises a plate-shaped heat conductive plate having good thermal conductivity.

The present invention also provides a method suitable for manufacturing each of the above-described semiconductor power modules.
The manufacturing methods of Nos. 6 to 23 are claimed in claims 1, 3, 4, 6, respectively.
It is suitable for the manufacture of devices 7, 13, 14, and 15.

[0042]

In the semiconductor power module according to the present invention, the thermally conductive plate material provided on the power board is exposed on the outer surface of the envelope of the device. I have. Therefore, by attaching the device so that the plate material directly contacts an external heat sink or the like, heat generated in the circuit can be released to the outside without the provision of the copper base plate. Since no copper base plate is required,
No bimetal effect occurs. Therefore, the power substrate is not broken, the structure is simpler, the device can be manufactured at low cost, and a high-speed and small-sized device is realized.

<Operation of the invention according to claim 2> In the semiconductor power module according to the present invention, ceramic is used for the heat-resistant insulating material of the power substrate main body, and the power wiring pattern and the plate material are disposed by metallized bonding. Therefore, the heat loss generated in the power switching semiconductor element and the power wiring pattern is efficiently transmitted to the plate material.

<Operation of the invention according to claim 3> In the semiconductor power module of the present invention, the control substrate on which a control circuit element for generating a control signal and transmitting the control signal to the power switching semiconductor element is disposed is a power substrate. It is arranged around. For this reason, it is possible to realize a small-sized device with a smaller thickness. Further, the control substrate has a pressing member,
In addition, since the plate material is engaged with the edge of the power board, the plate material exposed on the outer surface of the envelope can be pressed against an external radiator plate or the like with a sufficient pressure.

<Operation of the Invention According to Claim 4> Since the semiconductor power module of the present invention has the spacer that comes into contact with the periphery of the power substrate, the power substrate is located at a predetermined position defined by the spacer.

<Effect of the Invention According to Claim 5> In the semiconductor power module of the present invention, since the ratio between the thickness of the power wiring pattern and the thickness of the plate material is adjusted, the power substrate is subject to temperature changes. It does not warp and deform. For this reason,
Not only is the destruction of the power substrate prevented, but also the life cycle of the connection between the power wiring pattern and the power switching semiconductor element is prevented from being reduced by a thermal cycle.

<Operation of the invention according to claim 6> In the semiconductor power module of the present invention, the spacer has elasticity, and the surface of the spacer and the surface of the plate material of the power substrate are substantially coplanar. Therefore, the plate member can be effectively pressed against an external heat radiating plate or the like with a sufficient pressure. In addition, since the spacer has elasticity, high precision is not required for the dimensions of the power substrate or the like that comes into contact with the spacer.

<Operation of the invention according to claim 7> In the semiconductor power module of the present invention, the spacer has elasticity, and the surface of the spacer projects outside the surface of the plate member of the power substrate. When this device is attached to an external heat sink or the like, the spacer functions as a packing. Therefore, the power switching semiconductor element is protected from the outside air. As a result, deterioration of the semiconductor element due to moisture in the outside air or the like is suppressed. In addition, since the spacer has elasticity, high precision is not required for the dimensions of the power substrate or the like that comes into contact with the spacer.

In the semiconductor power module according to the present invention, since the surface of the plate material of the power substrate is located more outward than the surface of the spacer, sufficient pressure is applied to the plate material. Thus, it can be effectively pressed against an external heat sink or the like.

<Operation of the invention according to claim 9> In the semiconductor power module of the present invention, since the power board abuts on the control board at the abutting member, the abutting member functions as a cushioning material, and The power substrate main body can be prevented from being damaged by engagement with the power substrate. Further, the strength of the power board main body is also improved.

<Operation of the Invention> According to the semiconductor power module of the present invention, since the pressing member has a metal plate, the plate material exposed on the outer surface of the envelope can be further externally pressed with sufficient pressure. It can be pressed against a heat sink or the like. Further, the metal plate shields the electromagnetic noise generated due to the operation of the control circuit element, and suppresses the electromagnetic noise outside the device.

<Operation of the invention according to claim 11> In the semiconductor power module of the present invention, since the control board has an opening and the power board is located in this opening, the bottom portion of the envelope is provided. Are further miniaturized, and accordingly, the apparatus is further miniaturized.

<Operation of the invention according to claim 12> Since the semiconductor power module of the present invention includes the precoat resin that covers the power switching element, the moisture proof of the switching element is ensured. Therefore, the breakdown voltage of the switching element is maintained for a long time. In addition, there is a step between the main surface of the power substrate and the main surface of the control substrate, and the switching element to be covered with the precoat resin is disposed on the recessed surface of the step. For this reason, in the step of covering the switching element with the precoat resin, the step prevents diffusion of the precoat resin, so that there is no possibility that the precoat resin diffuses to an unnecessary region. As a result, the manufacturing process of the semiconductor power module is simple, and there is no fear of unnecessarily consuming precoat resin.

<Operation of the invention according to claim 13> In the semiconductor power module of the present invention, since the space between the power board and the spacer is in contact with a flexible adhesive, the power board and the spacer are in contact with each other. The deformation of the power substrate due to the difference in the coefficient of thermal expansion between the spacers is prevented.

<Operation of the invention according to claim 14> In the semiconductor power module according to the present invention, the main surfaces of the control board and the spacer constituting the bottom surface of the envelope are in contact with each other. Moreover, they are fixed to each other. For this reason, the thickness of the bottom portion can be made thin and small, and the spacers are prevented from falling off.

<Effect of the Invention According to Claim 15> In the semiconductor power module of the present invention, a heat conductive plate having good thermal conductivity slidably abuts the plate material of the power board. For this reason, the heat loss generated in the circuit is radiated to the external heat radiating plate via the heat conductive plate, so that even when a heat radiating plate having poor surface smoothness is used, the heat loss is effectively radiated.

<Effects of the Inventions of Claims 16 to 23> According to the method of manufacturing a semiconductor power module of the present invention, the semiconductor power module of the present invention can be manufactured effectively.

[0058]

Embodiments of the present invention will be described below.
In the following drawings, the same parts as those of the conventional device are denoted by the same reference numerals, and detailed description thereof will be omitted.

Example 1 <Circuit Configuration and Operation of Apparatus> FIG. 2 is a schematic circuit diagram showing a main part of a circuit 210 of a semiconductor power module 200 in one embodiment of the present invention. Apparatus circuit 210
A main circuit 220 for supplying regulated power to the load;
And a control circuit 230 for controlling the operation of the main circuit 220. Six IGBT elements T1 included in main circuit 220
To T6 (power switching semiconductor element), the control circuit 230 four semiconductor element included in IC1～IC4 (control circuit elements) gate voltage signal output V _G 1 to V _G 6
In response to the (control signal), the current supplied to the load is repeatedly cut off or connected. Three IGBT elements T3 to T6
Are the common negative power supply potential to each other, a common by a single semiconductor device IC 4, the gate voltage signal V _G. 4 to
V _G 6 is supplied.

Similar to the conventional device, the main circuit 220 is a circuit through which a relatively large current flows, and is designed to withstand a large current and heat generated by the large current. On the other hand, since the control circuit 230 is a circuit that processes a voltage signal, the current flowing through the circuit is very small. Therefore, the control circuit 2
At 30, the circuit design corresponding to the large current is not performed.

<Appearance of Apparatus> FIG. 3 is a perspective view showing an appearance of the apparatus 200. The device 200 includes a case 201 made of an insulator such as a synthetic resin. The terminal 203 of the main circuit 220 and the terminal 204 of the control circuit 230 are exposed outside the upper surface of the main body. At these terminals,
The same parts as the terminals in the circuit diagram of FIG. 2 are denoted by the same symbols.

<Arrangement of Circuit Elements of Main Circuit> FIG. 4 is a plan view of a composite substrate 205 constituting a housing (envelope) of the device 200 together with the case 201, and circuit elements arranged thereon. . The composite board 205 includes a power board 221 on which the main circuit 220 is deployed and a control board 231 on which the control circuit 230 is deployed. The control board 231 includes
In addition to the semiconductor elements IC1 to IC4, a passive circuit element E
L is arranged. Between various circuit elements and terminals,
They are appropriately connected by conductor wires w.

<Structure of Power Substrate> FIGS. 5A and 5B are a plan view of the power substrate 221 (FIG. 5A) and an AA section (FIG. 5A).
It is sectional drawing (FIG.5 (b)) which followed (a)). The power substrate 221 has a DBC substrate structure. That is, copper is mainly applied to the surface (first main surface) of the plate-shaped power substrate main body 222 made of aluminum oxide or aluminum nitride, which is excellent in heat resistance and thermal conductivity, and also excellent in mechanical strength. Plate-like patterns 223 (power wiring patterns) and 224 as materials are provided. The surfaces of the patterns 223 and 224 are plated with, for example, nickel or the like. These patterns 223, 224
And the power substrate body 222 are metallized.

The pattern 223 includes IGBT elements T1 to T
6, wiring patterns to which circuit elements D1 to D6 are connected, and wiring patterns P (P), P (N), P (U),
It has five parts, P (V) and P (W). As shown in FIG. 4, the wiring patterns P (P) and P (N)
Connected to the power terminals PS (P) and PS (N), respectively.
Transmit power supply potential. Wiring pattern P (U), P
(V) and P (W) are output terminals OUT (U) and OU
T (V) and OUT (W), respectively, for transmitting load current. The pattern 224 has the same material and thickness as the pattern 223, and in particular, the power substrate 221
Are arranged along the edge. The power substrate 221 includes:
As described later, the main surface of the pattern 224 is engaged with the control substrate 231.

A flat pattern 225 (plate material) having the same material as the patterns 223 and 224 is provided on the entire back surface (second main surface) of the power substrate 221 by metallization bonding. The thickness of the power substrate main body 222 is determined in consideration of required mechanical strength and heat dissipation, and the thicknesses of the patterns 223 and 224 and the pattern 225 are determined by the power substrate 221 itself as the temperature changes. The ratio is determined according to the ratio of the area covered by the patterns 223 and 224 to the entire area of the power substrate main body 222 so as not to cause the warp deformation.

<Structure of Control Board> FIG.
FIG. The control substrate 231 has a structure of an insulated metal substrate. That is, the control board 231
Is a metal plate (pressing member) 23 such as iron or aluminum.
2, a metal plate 232 is provided with an epoxy resin film (insulating layer) 233 on one main surface thereof. Further, on the surface of the coating 233, a wiring pattern 236 (control wiring pattern) mainly composed of copper is provided on both main surfaces, and 237 are respectively provided, and control of an epoxy resin (GFRP) reinforced with glass fiber is performed. The substrate main body 235 is attached via an adhesive 234. The control board 231 has an opening in the center part whose inner circumference is slightly smaller than the outer circumference of the power board 221.
The power board 22 is engaged with the pattern 224 of the power board 22.
1 around.

<Structure of Spacer> Around the power substrate 221, there is provided a plate-like spacer 240 provided with an opening having an inner periphery corresponding to or somewhat larger than the outer periphery of the power substrate 221. Are provided around the power substrate 221. The spacer 240 is made of, for example, a resin having excellent heat resistance such as an epoxy resin or a metal. The main surfaces of the spacer 240 and the control substrate 231 are in contact with each other, and the space therebetween is adhered with an adhesive. In addition, between the inner peripheral edge of the spacer 240 and the outer peripheral edge of the power substrate 221, which are in contact with each other, a flexible adhesive 260 such as a silicone adhesive is bonded. The lower main surface of the pattern 225 and the lower main surface of the spacer 240 are on the same plane.

<Structure of Enclosure> The power substrate 221, the control substrate 231, and the spacer 240 are composed of the composite substrate 205.
Is configured. FIG. 6 is an exploded view of the composite substrate 205,
The positional relationship among the power substrate 221, the control substrate 231, and the spacer 240 is schematically shown.

Returning to FIG. 1, the composite substrate 205
Case 2 which forms the bottom surface of 00 and has an open upper end
01, IGBT elements T1 to T6, semiconductor element I
An envelope that accommodates circuit elements such as C1 to IC4 in an internal space is configured. The case 201 itself has no bottom, and the bottom of the envelope is constituted by the composite substrate 205. The composite substrate 205 is fixed to the case 201 with an adhesive. The interior space of the envelope is filled with an epoxy resin filler 250 for the purpose of protecting circuit elements. A lid may be provided on the upper surface of the device 200, similarly to the lid 102 of the conventional device 100.

<Function of Apparatus> In the apparatus 200, the pattern 225 provided on the bottom surface of the power substrate 221 is exposed on the outer surface of the envelope. Therefore, pattern 2
By mounting the device 200 such that the 25 directly contacts an external heat sink (not shown), heat generated in the main circuit 220 can be effectively released to the outside without providing a copper base plate. it can. The control board 231 is
Since the pattern 224 is engaged with the power board 221 and has the metal plate 232, the pattern 225 of the power board 221 is equivalent to the heat sink by fixing the case 201 and the like to the heat sink with screws or the like. It is pressed with pressure. That is, the pressing force toward the heat radiating plate is effectively transmitted from the case 201 to the power substrate 221 via the metal plate 232 having rigidity and functioning as a pressing member. Therefore, good thermal contact between the pattern 225 and the heat radiating plate is obtained, so that heat is radiated effectively.

Since the device 200 does not require a copper base plate, the bimetal effect does not occur due to a change in temperature. Therefore, there is no possibility that the power substrate 221 is broken. Also,
Since the S-vent structure required in the conventional apparatus is not required, the apparatus can operate at high speed. In addition, since the power substrate 221 is not deformed by the bimetal effect and does not require an S-vent structure, the interior space of the envelope is filled only with epoxy resin without filling silicone gel around circuit elements. It is possible to do.

In the device 200, the spacer 240 having an opening abutting on the outer edge of the power substrate 221 is provided. Fit in. Further, since the power substrate 221 and the spacer 240 are in contact with each other via the flexible adhesive 260, the internal strain caused by the difference in the thermal expansion coefficient between the power substrate 221 and the spacer 240 is reduced. Generation and deformation can be prevented, and good thermal contact between the pattern 225 and the heat sink can always be maintained. Further, the control substrate 231 and the spacer 2
The spaces between the main surfaces 40 are in contact with each other on the main surfaces, and are fixed to each other by an adhesive. Therefore, a small composite substrate 205 having a small thickness can be obtained, and the spacers are prevented from falling off. The adhesion between the case 201 and the composite substrate 205 prevents the entire composite substrate 205 from falling off the case 201. Also, the control board 231
However, since it is arranged around the power substrate 221, the thickness of the device can be reduced and a small device can be obtained.

Embodiment 2 In the apparatus 200 of the first embodiment, the spacer 240 can be made of a resin having elasticity as well as heat resistance such as silicone resin. In this case, the adhesive 260 may be hard, and the inner peripheral edge of the opening of the spacer 240 does not need to be larger than the outer peripheral edge of the power substrate 221. Since the spacer 240 has elasticity, the pattern 225 of the power board 221 is more effectively pressed against the radiator plate by fixing the case 201 and the like to the radiator plate with screws or the like. That is, in the device of this embodiment, a better heat radiation effect can be obtained than in the device 200 of the first embodiment.

Embodiment 3 FIG. 7 is a front sectional view of an apparatus according to a third embodiment. The device of this embodiment has a structure in which the surface of the pattern 225 of the power substrate 221 is slightly protruded from the surface of the spacer 240 in the device 200 of the first embodiment. Therefore, by fixing the case 201 and the like to the heat sink with screws or the like, the pattern 2
25 is more effectively pressed against the heat sink. That is,
In the device of this embodiment, a better heat radiation effect can be obtained than in the device 200 of the first embodiment.

Embodiment 4 FIG. 8 is a front sectional view of the device according to the fourth embodiment. In the device of this embodiment, in the device 200 of the first embodiment, the control substrate 231 and the spacer 240 are fastened to each other by screws 241 without using an adhesive. Thus, similarly to the device of the first embodiment, the spacer 240 can be prevented from falling off.

Embodiment 5 FIG. FIG. 9 is a front sectional view of the device according to the fifth embodiment. In the apparatus of this embodiment, a heat conductive plate 270 having good thermal conductivity, such as copper or aluminum,
It is provided on the bottom of the envelope. The heat conducting plate 270 is screw 2
It is fastened to the spacer 240 by 71. The upper surface of the heat guide plate 270 is in contact with the bottom surface of the pattern 225.
When the device 200 is used, the bottom of the heat conducting plate 270 is pressed against the heat radiating plate by fixing the case 201 and the like to a heat radiating plate (not shown) outside the device with screws or the like.
For this reason, the heat loss generated in the main circuit 220 is conducted from the pattern 225 to the heat conducting plate 270, and furthermore, the heat conducting plate 270
From the radiator to the external heat sink.

By making the upper surface of the heat conducting plate 270 high in surface smoothness similarly to the bottom surface of the pattern 225, good thermal contact between the pattern 225 and the heat conducting plate 270 can be maintained. Thus, the heat generated in main circuit 220 is effectively conducted to heat conducting plate 270 having a relatively large surface area. That is, the heat guide plate 270 itself functions as a small heat sink. Therefore, even if the surface smoothness of the heat radiating plate pressed against the bottom surface of the heat conducting plate 270 is not good and the heat contact between the heat conducting plate 270 and the heat radiating plate is not good, the heat generated in the main circuit 220 can be used without any problem. Can be dissipated. That is, in the device of this embodiment, the provision of the heat conducting plate 270 has an advantage that it is not necessary to strictly select the type of the heat radiating plate to be provided outside.

Thermal contact is made between the heat guide plate 270 and the pattern 225, but they are slidable relative to each other in the direction along the contact surface. Therefore, the conventional device 1
The deformation of the power substrate 221 due to the temperature change, which is a problem in 00, does not occur.

Instead of fastening the heat conducting plate 270 to the spacer 240 with the screw 271, the heat conducting plate 270 may be attached to the bottom surface of the power board 221, the bottom surface of the spacer 240, or both via an adhesive. When attaching the heat conducting plate 270 to the bottom surface of the power substrate 221, a flexible adhesive is used as the adhesive. Therefore, the heat guide plate 2
Since the top surface of the power substrate 221 and the bottom surface of the power substrate 221 can slide with respect to each other in a direction along these surfaces, thermal deformation of the power substrate 221 is prevented.

[Embodiment 6] FIG. 10 is a front sectional view of an apparatus according to a sixth embodiment. In the apparatus of this embodiment, the precoat resin 280 is applied to the upper main surface of the power substrate 221 in the apparatus 200 of the first embodiment. The precoat resin 280 includes IGBT elements T1 to T6, a circuit element D1
By covering the circuit elements such as D6 to D6, these circuit elements are moisture-proof. This prevents the withstand voltage of the circuit element from deteriorating. That is, the pre-coated resin 28
Since 0 is provided mainly for the purpose of preventing insulation deterioration, a high purity is required for the material. For this purpose, for example, a high-purity epoxy resin is used. Alternatively, high-purity epoxy mixed with alumina or silica powder may be used. In this case, by adjusting the degree of mixing of the powder, the coefficient of thermal expansion of the pre-coated resin 280 can be matched with that of the power substrate 221. Therefore, the pre-coated resin 280 hardly peels off.
The life of the device is improved.

Since the material of the precoat resin 280 is expensive, it is desirable to avoid useless use. As shown in FIG. 10, in the apparatus of this embodiment, the power substrate 221 is used.
There is a step between the upper main surface of the control substrate 231 and the upper main surface of the control substrate 231.
1 recedes below the upper main surface. For this reason, the precoat resin 28 applied to the upper main surface of the power substrate 221
0 indicates that the control substrate 23 has fluidity before curing.
At the open end of one, the outflow is prevented. As a result, the precoat resin 280 is not unnecessarily diffused, so that there is no possibility that the expensive precoat resin 280 is wasted. Note that the precoat resin 280 does not necessarily need to be filled up to the upper end of the opening end of the control substrate 231 as shown in FIG. 10, and the circuit elements such as the IGBT elements T1 to T6 to be applied are sufficiently covered. I just need.

[Embodiment 7] FIG. 11 is a front sectional view of an apparatus according to a seventh embodiment. In the apparatus of this embodiment, similarly to the apparatus 200 of the second embodiment, the spacer 240a is made of an elastic resin such as silicone resin, and the lower main surface of the spacer 240a is larger than the lower main surface of the pattern 225. It protrudes downward. The protrusion amount is, for example, about 0.5 mm to 1 mm. Therefore, pattern 2
25 so that the lower main surface of the device 25 contacts an external heat sink.
When 0 is attached, the spacer 240a is pressed against this heat sink with elastic force. That is, since the space between the spacer 240a and the heat sink is in close contact, the spacer 2
40a functions as packing. For this reason, the I disposed on the power substrate 221 surrounded by the spacer 240a
The circuit elements such as the GBT elements T1 to T6 and the pattern 225 are protected from the outside air. As a result, deterioration of the circuit element, the pattern 225, and the like due to moisture or the like in the outside air is suppressed.

Since the spacer 240a has elasticity, the adhesive 260 may be hard as in the case of the second embodiment. Further, high precision is not required for the dimensions of the power substrate 221 stored in the opening of the spacer 240a.

Embodiment 8 FIG. Here, an example of a procedure in manufacturing the device of the first embodiment shown in FIG. 1 will be described.

(1) First, the power board main body 222, I
Circuit elements of the main circuit such as GBT elements T1 to T6, terminals 203 of the main circuit such as power supply terminals PS (P) and PS (N),
A circuit element of the control circuit 230 such as a metal plate 232 coated with a film 233, and semiconductor elements IC1 to IC4;
Terminal 204 of the control circuit such as a power supply terminal V _EE 1~V _EE 4,
The spacer 240 and the case 201 are prepared.

(2) Patterns 223 and 224 are provided on the upper main surface of the power supply substrate main body 222 by metallization coupling.

(3) Further, a pattern 225 is disposed on the lower main surface of the power supply substrate main body 222 by metallization to form the power supply substrate 221.

(4) The IGBT element T
The main circuit elements such as 1 to T6 and the terminal 203 are connected.

(5) The GFRP control substrate main body 235 on which the wiring patterns 236 and 237 are
By attaching to the surface of the coating 233 via 34,
A control board 231 is created.

(6) The circuit elements of the control circuit 230 such as the semiconductor elements IC1 to IC4 and the terminals 204 are connected to the wiring pattern 236.

(7) The control board 231 is replaced with the power board 2
21 and is arranged around the power substrate 221.

(8) The inner peripheral edge of the opening of the spacer 240 is brought into contact with the outer peripheral edge of the power substrate 221 via a silicone-based adhesive, and the main surface of the control substrate 231 is bonded to the main surface. Abut through the agent. Thus, the spacer 240 is fixedly attached to the periphery of the power board 221.

(9) Power substrate 221, spacer 24
0, and the composite substrate 2 in which the control substrate 231 is integrated.
05 is fixed to the case 201 via an adhesive.

(10) Circuit elements, terminals and the like are appropriately connected by conductor wires w.

(11) Composite substrate 205 and case 2
01 is filled with an epoxy resin filler 250 into the inner space of the envelope of the apparatus formed by heat curing.

[Embodiment 9] The procedure for manufacturing the device of the second embodiment is as follows.
Spacer 240 mainly composed of silicone resin as 0
Prepare Further, in step (8), the spacer 240
The adhesive used for bonding between the opening and the power substrate 221 is not limited to a flexible adhesive such as silicone.

[Embodiment 10] The procedure for manufacturing the device of the third embodiment is the same as that of the eighth embodiment, except that the step (1) is performed so that the thickness of the power substrate 221 is slightly larger than the thickness of the spacer 240. Power substrate body 2
22 and the thickness of the spacer 240, and step (2),
Pattern 22 disposed on power supply substrate main body 222 in (3)
Adjust the thickness of 3, 224, 225.

[Embodiment 11] In the procedure for manufacturing the device of the fourth embodiment, prior to the step (8) of the eighth embodiment, holes are formed in the control substrate 231 and the spacer 240 so that the screws 241 can pass therethrough. Further, in the step (8), the inner peripheral edge of the opening of the spacer 240 is brought into contact with the outer peripheral edge of the power substrate 221 via a silicone-based adhesive. Is fastened by the screw 241. Thus, the spacer 240 is fixedly attached to the periphery of the power board 221.

[Embodiment 12] The procedure for manufacturing the device of the fifth embodiment is as follows: prior to step (8) of the eighth embodiment,
70, the control substrate 231 and the spacer 240
And a heat conducting plate 270
Is provided with a screw hole to be screwed with the screw 271. Further, prior to the step (11), the heat guide plate 270 is fastened to the spacer 240 by the screws 271.

The heat conductive plate 270, which is a modification of the fifth embodiment, is configured such that the power
The procedure for manufacturing the device mounted on the bottom surface of the device 1 is as follows. First, prior to the step (8) of the eighth embodiment, the heat conductive plate 270 is prepared. Further, prior to the step (11), the heat conductive plate 270 is attached to the bottom surface of the spacer 240 or the bottom surface of the power substrate 221 using an adhesive. When attaching the heat conducting plate 270 to the bottom surface of the power substrate 221, a flexible adhesive is used as the adhesive.

[0101]

<Effect of the Invention> According to the semiconductor power module of the present invention, the circuit is mounted by mounting the device such that the plate member of the power board is in direct contact with an external heat sink or the like. Since the heat generated in the above can be released outside without the copper base plate, the bimetal effect does not occur. Therefore, the device of the present invention has an effect that the power substrate is not destroyed. Since there is no bimetal effect, the S vent structure is not required,
Since the device can be operated at high speed and silicone gel is not required, the structure of the device can be simplified and the manufacturing cost can be reduced. Further, since there is no S vent structure, there is an effect that the apparatus can be made thin and small. Further, since the power substrate and the control substrate are disposed on substantially the same plane, this also has the effect of making the device thinner and smaller.

<Effect of the Invention According to Claim 2> In the semiconductor power module according to the present invention, ceramic is used for the heat-resistant insulating material of the power substrate main body, and the power wiring pattern and the plate material are provided by metallized bonding. Therefore, there is an effect that heat loss generated in the power switching semiconductor element and the power wiring pattern is efficiently transmitted to the plate material. Also, since the adhesive strength between the power wiring pattern and the plate material and the power substrate body is high,
Deterioration due to peeling or the like is less likely to occur, and an effect that the product life is long is obtained.

<Effect of the Invention According to Claim 3> In the semiconductor power module of the present invention, the control substrate on which a control circuit element for generating a control signal and transmitting the control signal to the power switching semiconductor element is arranged is a power substrate. It is arranged around. For this reason, there is an effect that a small-sized device with a smaller thickness can be realized. In addition, since the control board has a pressing member and is engaged with the edge of the power board, the plate material exposed on the outer surface of the envelope is pressed against an external radiator plate or the like with sufficient pressure. There is an effect that can be done.

<Effect of the Invention According to Claim 4> In the semiconductor power module of the present invention, the bottom surface of the envelope is
Since the power substrate has the spacer that comes into contact with the periphery of the power substrate, there is an effect that the power substrate is set in a predetermined position defined by the spacer.

<Effect of the Invention According to Claim 5> In the semiconductor power module of the present invention, since the ratio between the thickness of the power wiring pattern and the thickness of the plate material is adjusted, the power substrate is subject to a temperature change. It does not warp and deform. For this reason,
This has the effect of not only preventing the power substrate from being destroyed, but also suppressing a decrease in the life of the connection portion between the power wiring pattern and the power switching semiconductor element due to a thermal cycle.

<Effect of the Invention According to Claim 6> In the semiconductor power module of the present invention, the spacer has elasticity, and the surface of the spacer and the surface of the plate material of the power substrate are substantially coplanar. Therefore, there is an effect that the plate material can be effectively pressed against an external heat radiating plate or the like with a sufficient pressure.
In addition, since the spacer has elasticity, there is an effect that high precision is not required for dimensions of a power substrate or the like that comes into contact with the spacer.

<Effect of the Invention According to Claim 7> In the semiconductor power module of the present invention, the spacer has elasticity, and the surface of the spacer projects outside the surface of the plate member of the power substrate. When this device is attached to an external heat sink or the like, the spacer functions as a packing. For this reason, the power switching semiconductor element is protected from the outside air, so that there is an effect that deterioration of the semiconductor element due to moisture or the like in the outside air is suppressed. In addition, since the spacer has elasticity, there is an effect that high precision is not required for dimensions of a power substrate or the like that comes into contact with the spacer.

<Effect of the Invention According to Claim 8> In the semiconductor power module of the present invention, since the surface of the plate material of the power substrate is located more outward with respect to the surface of the spacer, sufficient pressure is applied to the plate material. Accordingly, there is an effect that the pressure can be effectively pressed against an external heat sink or the like.

<Effect of the Invention According to Claim 9> In the semiconductor power module of the present invention, since the power board abuts on the control board at the abutting member, the abutting member functions as a cushioning material, and This has the effect of preventing the power board main body from being damaged by engagement with the power board. Also,
The effect of improving the strength of the power substrate main body is obtained.

<Effect of the Invention According to Claim 10> In the semiconductor power module of the present invention, since the pressing member is provided with the metal plate, the plate material exposed on the outer surface of the envelope can be further externally pressed with sufficient pressure. This has the effect of being able to press against a heat sink or the like. Further, the metal plate shields electromagnetic noise generated due to the operation of the control circuit element, and has an effect of suppressing the electromagnetic noise outside the device.

<Effect of the Invention According to Claim 11> In the semiconductor power module of the present invention, the control board has an opening, and the power board is located in the opening, so that the bottom portion of the envelope is provided. Is further reduced in size, and the size of the apparatus is further reduced accordingly.

<Effect of the Invention of Claim 12> Since the semiconductor power module of the present invention includes the precoat resin covering the power switching element, the moisture proof of the switching element is reliably performed. Therefore, there is an effect that the withstand voltage of the switching element is maintained for a long time. In addition, there is a step between the main surface of the power substrate and the main surface of the control substrate, and the switching element to be covered with the precoat resin is disposed on the recessed surface of the step. For this reason, in the step of covering the switching element with the precoat resin, the step prevents the precoat resin from flowing out, so that the manufacturing process of the semiconductor power module is simple and the precoat resin is not consumed unnecessarily much. is there.

<Effect of the Invention According to Claim 13> In the semiconductor power module of the present invention, since the power substrate and the spacer are in contact with each other via a flexible adhesive, the power substrate and the spacer are in contact with each other. This has the effect of preventing deformation of the power substrate due to the difference in the coefficient of thermal expansion between the spacers.

<Effect of the Invention According to Claim 14> In the semiconductor power module of the present invention, the main surfaces of the control substrate and the spacer constituting the bottom portion of the envelope are in contact with each other. Moreover, they are fixed to each other. For this reason, there is an effect that the thickness of the bottom portion can be made thin and small and the spacer can be prevented from falling off.

<Effect of the Invention According to Claim 15> In the semiconductor power module of the present invention, a heat conductive plate having good thermal conductivity slidably abuts the plate material of the power board. Therefore, the heat loss generated in the circuit is radiated to the external heat radiating plate through the heat conductive plate, so that even when a heat radiating plate having poor surface smoothness is used, the heat loss can be effectively radiated. There is.

<Effects of the Inventions of Claims 16 to 23> The method of manufacturing a semiconductor power module of the present invention has an effect that the semiconductor power module of the present invention can be easily manufactured.

[Brief description of the drawings]

FIG. 1 is a front sectional view of an apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic circuit diagram of a circuit portion of the device according to the embodiment of the present invention.

FIG. 3 is a perspective view showing the appearance of the apparatus according to the embodiment of the present invention.

FIG. 4 is a plan view of a composite substrate and a circuit element disposed thereon according to the embodiment of the present invention.

FIG. 5 is a structural diagram of a power board according to an embodiment of the present invention.

FIG. 6 is an exploded view of the composite substrate according to the embodiment of the present invention.

FIG. 7 is a front sectional view of an apparatus according to another embodiment of the present invention.

FIG. 8 is a front sectional view of an apparatus according to still another embodiment of the present invention.

FIG. 9 is a front sectional view of an apparatus according to still another embodiment of the present invention.

FIG. 10 is a front sectional view of an apparatus according to still another embodiment of the present invention.

FIG. 11 is a front sectional view of an apparatus according to still another embodiment of the present invention.

FIG. 12 is a schematic circuit diagram of a circuit portion of a conventional device.

FIG. 13 is a perspective view showing the appearance of a conventional device.

FIG. 14 is a plan view of a main circuit of a conventional device.

FIG. 15 is a plan view of a control circuit of a conventional device.

FIG. 16 is a front sectional view of a conventional device.

[Explanation of symbols]

200 semiconductor power module 205 composite board 221 power board 222 power board body 223 power wiring pattern 225 pattern (plate material) 231 control board 232 metal plate (pressing member) 235 control board body 236 wiring pattern (control wiring pattern) ) 240,240A spacer 241 screw 260 adhesive 270 heat conducting board 271 screws 280 precoat resin T1 to T6 IGBT element (power switching semiconductor element) IC1～IC4 semiconductor device (control circuit elements) V _G 1~V _G 6 gate voltage signal (Control signal)

Claims (23)

(57) [Claims] 1. A semiconductor power module in which a power switching semiconductor element for repeatedly interrupting and connecting a current supplied to a load in response to a control signal is housed in a box-shaped envelope, wherein the envelope is A power substrate main body including a heat-resistant insulating material, and a power and power conduction semiconductor to which the power switching semiconductor element is connected. A power conductive wiring pattern, and a thermally conductive plate material disposed on the lower main surface of the power substrate main body and having substantially the same material as the power wiring pattern. A semiconductor power module, comprising: a power substrate formed in a flexible manner; and wherein the plate member is exposed on a lower surface of the envelope. 2. The semiconductor power module according to claim 1, wherein the heat-resistant insulating material is a ceramic, the power wiring pattern is substantially made of a copper material, and the upper surface of the power substrate main body. A semiconductor power module disposed on a main surface in a metallized connection, wherein the plate material is substantially made of a copper material, and disposed on the lower main surface of the power substrate main body in a metallized connection. 3. The semiconductor power module according to claim 1, wherein the bottom portion of the envelope is formed on a control board main body substantially made of an insulator, and on an upper main surface of the control board main body. A control wiring pattern having good electrical conductivity connected to and connected to a control circuit element for generating the control signal and supplying the control signal to the power switching semiconductor element; And a control board having a rigid plate-shaped pressing member, wherein the control board is arranged around the power board and is engaged with an edge of the power board. A semiconductor power module, characterized in that: 4. The semiconductor power module according to claim 3, wherein the bottom portion of the envelope is provided around the power substrate and is in contact with an outer peripheral edge of the power substrate. And a plate-shaped spacer having an edge and being in contact with a lower main surface of the control substrate. 5. The semiconductor power module according to claim 4, wherein a thickness of the power wiring pattern and a thickness of the plate member are adjusted so that the power substrate does not warp and deform with a change in temperature. A semiconductor power module having a ratio adjusted. 6. The semiconductor power module according to claim 4, wherein the spacer has elasticity, and a lower main surface of the spacer is located on substantially the same plane as a lower main surface of the plate material. Characteristic semiconductor power module. 7. The semiconductor power module according to claim 4, wherein the spacer has elasticity, and a lower main surface of the spacer projects below a lower main surface of the plate material. Characteristic semiconductor power module. 8. The semiconductor power module according to claim 4, wherein a lower main surface of said plate material projects below a lower main surface of said spacer. 9. The semiconductor power module according to claim 4, wherein the power substrate is disposed on an edge of the upper main surface of the power substrate main body, and the power substrate is in contact with the control substrate. A semiconductor power module, further comprising: a contact member that is in contact with and substantially comprises a metal. 10. The semiconductor power module according to claim 4, wherein said pressing member includes a metal plate. 11. The semiconductor power module according to claim 4, wherein the control board has an opening penetrating a central portion of a main surface thereof, and the power board is formed in the opening. A semiconductor power module, comprising: 12. The semiconductor power module according to claim 11, wherein an upper main surface of the power substrate located at the opening exists below an upper main surface of the control substrate. A semiconductor power module, wherein a precoat resin covering the power switching element is provided in the opening. 13. The semiconductor power module according to claim 4, wherein the inner peripheral edge of the spacer comes into contact with the outer peripheral edge of the power substrate via a flexible adhesive. A semiconductor power module, comprising: 14. The semiconductor power module according to claim 4, wherein an upper main surface of the spacer is in contact with a lower main surface of the control substrate, and the spacer and the control substrate are fixed to each other. A semiconductor power module, comprising: 15. The semiconductor power module according to claim 4, wherein the semiconductor power module is provided so as to contact below the bottom of the envelope,
A semiconductor power module, further comprising: a thermally conductive plate-shaped heat conductive plate having a slidable upper main surface on a lower main surface of the plate material. 16. A method of manufacturing a semiconductor power module, comprising: (a) providing a power wiring pattern having good electrical conductivity on an upper main surface of a power substrate main body having a heat-resistant insulating material; A step of obtaining a substrate structure provided with a power substrate in which a thermally conductive plate material having substantially the same material as the power wiring pattern is disposed on a lower main surface of the power substrate main body; (b) connecting a power switching semiconductor element to the power wiring pattern; and (c) connecting the bottomless case to the substrate structure to make the power substrate a part of the bottom, A step of producing an envelope accommodating the power switching semiconductor element therein, wherein the step (c) comprises: (c-1) at the bottom of the envelope, the lower main surface of the plate material The case is connected to the power board so that The method of manufacturing a semiconductor power module, characterized in that it comprises a step. 17. The method for manufacturing a semiconductor power module according to claim 16, wherein: (d) a control wiring pattern having good electrical conductivity is formed on an upper main surface of the control substrate body substantially made of an insulator. Disposed, a step of forming a control board by layering a rigid plate-shaped pressing member on the lower main surface of the control board body in a layered manner; (e) a control circuit element in the control wiring pattern. And (c-2) engaging the control board with an edge of the power board, and arranging the control board around the power board. A method for manufacturing a semiconductor power module, comprising: 18. The method for manufacturing a semiconductor power module according to claim 17, further comprising: (f) preparing a plate-shaped spacer having an inner peripheral edge, wherein the step (c) comprises: (c-3) a step of disposing the spacer around the power substrate so that the inner peripheral edge abuts the outer peripheral edge of the power substrate. Manufacturing method. 19. The method for manufacturing a semiconductor power module according to claim 18, wherein the spacer has elasticity, and the step (c-3) comprises: (c-3-1) the spacer Disposing the spacer such that a lower main surface of the plate material is substantially flush with a lower main surface of the plate material. 20. The method of manufacturing a semiconductor power module according to claim 18, wherein: in the step (c-3), (c-3-2) a lower main surface of the spacer is a lower main surface of the plate material. A step of arranging the spacer so as to be located below the semiconductor power module. 21. The method for manufacturing a semiconductor power module according to claim 18, wherein the step (c-3) comprises: (c-3-3) setting the inner peripheral edge of the spacer to the power Contacting the outer peripheral edge of the substrate with a flexible adhesive via a flexible adhesive. 22. The method of manufacturing a semiconductor power module according to claim 18, wherein the step (c-3) comprises: (c-3-4) setting a lower main surface of the spacer to the control substrate. Abutting the lower main surface and fixing the spacer and the control substrate to each other. 23. The method for manufacturing a semiconductor power module according to claim 18, wherein: (g) a plate-shaped heat conductive plate having good thermal conductivity, the upper main surface of which can slide on the lower main surface of the plate material. A method for manufacturing a semiconductor power module, the method further comprising: placing the semiconductor power module in contact with the semiconductor power module.