JP2001237366A - Semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a semiconductor device in which insulation properties and heat dissipation properties are secured without forming defects of a sealing portion. A semiconductor device includes an electrode frame.
And a power semiconductor element 1, an insulating member 7 made of ceramic, and a sealing portion 5 made of epoxy resin. The power semiconductor element 1 is mounted on the surface 2S1 of the element mounting portion 2D of the electrode frame 2. The surface 7S1 of the insulating member 7 facing the surface 2S2 of the element mounting portion 2D has such a size and shape that the periphery of the surface 7S1 can surround the periphery of the surface 2S2 of the element mounting portion 2D. It is arranged so as to surround the periphery of the surface 2S2 of the element mounting portion 2D. The sealing part 5 covers the power semiconductor element 1 and the element mounting part 2D and the like, and has a surface 7S of the insulating member 7.
It is formed in contact with 1,7S3. The surface 7S2 of the insulating member 7 is not covered with the sealing portion 5, and the entire surface 7S2 is exposed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a technique of sealing or forming a package and securing insulation properties in a semiconductor device having a semiconductor element generating a large amount of heat, and furthermore, a heat radiation technique.

[0002]

2. Description of the Related Art FIG. 10 shows a conventional power semiconductor device 10.
1P (hereinafter, also simply referred to as a semiconductor device 101P) is shown in a longitudinal sectional view. As shown in FIG. 10, the power semiconductor element 1 is joined to the element mounting portion of the electrode frame 2 or the die pad 2D by the brazing material 3, and the space between the power semiconductor element 1 and the lead portion 2L of the electrode frame 2 is formed. Are connected by a thin metal wire 4. The power semiconductor element 1 and the element mounting portion 2D are sealed with a sealing resin 5P, and the insulating property of the semiconductor device 101P is ensured by the sealing resin 5P. The sealing resin 5P is formed by, for example, a potting method or a transfer molding method.

[0003]

As described above, the element mounting portion 2D of the conventional semiconductor device 101P is covered with the sealing resin 5P. At this time, in order to enhance the insulation on the element mounting portion 2D side of the power semiconductor element 1, the element mounting portion 2D
It is necessary to make the lower sealing resin 5P (see the sealing resin 5PP) thicker (see the thickness t). However, since the thermal conductivity of the sealing resin 5P is generally low, increasing the thickness t increases the thermal resistance. That is, the heat radiation of the power semiconductor element 1 against heat generation is reduced.

On the other hand, if the thickness t is reduced in order to improve the heat radiation, not only the above-mentioned insulation property cannot be ensured, but also the formation failure of the sealing resin 5PP and the decrease in insulation property caused by the failure are caused. You. That is, when the sealing resin 5P is formed by, for example, a potting method or a transfer molding method, if the thickness t is small, the sealing resin is injected or filled into a gap between the element mounting portion 2D and a mold (not shown). It becomes difficult. For this reason, formation failure of the sealing resin 5PP occurs due to insufficient filling of the sealing resin, and the formation failure reduces the insulating property of the sealing resin 5PP.

The present invention has been made in view of the above problems, and it is a first object of the present invention to provide a semiconductor device which does not have a defect in forming a sealing portion and has an insulating property.

A second object of the present invention is to provide a semiconductor device which can realize the first object at low cost and low cost.

Further, a third object of the present invention is to provide a semiconductor device in which the first and second objects are realized and the heat dissipation is stabilized and improved.

[0008]

(1) A semiconductor device according to the first aspect of the present invention is mounted on an electrode frame having an element mounting portion and a lead portion, and on one surface of the element mounting portion. A semiconductor element having a first surface surrounding the periphery of the other surface of the element mounting portion and facing the other surface, and a second surface facing the first surface; An insulating member fixed to the portion, and a sealing portion formed in contact with the insulating member while covering the entire surface of the second surface of the insulating member and covering the semiconductor element. I do.

(2) The semiconductor device according to the second aspect of the present invention is the semiconductor device according to the first aspect, wherein the second surface and the outer surface of the sealing portion are flat. Features.

(3) A semiconductor device according to a third aspect of the present invention is the semiconductor device according to the first aspect, wherein the insulating member has a side surface between the first surface and the second surface. A third surface, wherein the third surface is further exposed.

(4) A semiconductor device according to a fourth aspect of the present invention is the semiconductor device according to any one of the first to third aspects, wherein the insulating member is formed of an adhesive on the element mounting portion. It is characterized by being fixed.

(5) A semiconductor device according to a fifth aspect of the present invention is the semiconductor device according to any one of the first to fourth aspects, wherein the insulating member has a higher heat conduction than the sealing portion. It is characterized by a high rate.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS <First Embodiment> FIGS. 1 and 2 are a vertical sectional view and a top view, respectively, for explaining a power semiconductor device (semiconductor device) 101 according to a first embodiment. FIG. 1 is a longitudinal sectional view taken along line II in FIG. Further, in FIG. 2, the insulating member 7 and the sealing portion 5 are illustrated by thick lines and broken lines, respectively. Power semiconductor device 10
1 (hereinafter simply referred to as the semiconductor device 101) corresponds to a so-called DIP (Dual Inline Package) type.

As shown in FIG. 1 and FIG.
Reference numeral 01 denotes an electrode frame 2 and a power semiconductor element 1 (FIG. 1).
And two are shown in FIG. 2), an insulating member 7 (formed in a predetermined shape in advance), and a sealing portion 5. More specifically, the electrode frame 2 has an element mounting portion or die pad 2D and a lead portion 2L, and the power semiconductor element 1 is mounted on one surface 2S1 of the element mounting portion 2D. The power semiconductor element 1 is fixed to the element mounting portion 2D by the brazing material 3. The thin metal wire 4 connects between the power semiconductor element 1 and the lead 2L.

The insulating member 7 includes (a) a surface (first surface) 7S1 facing the other surface 2S2 of the element mounting portion 2D;
(B) Surface (second surface) 7S2 facing surface 7S1
And (c) a surface or side surface (third surface) 7S3 which is connected to both surfaces 7S1 and 7S2 and forms an outer surface of insulating member 7 together with both surfaces 7S1 and 7S2.

In particular, the surface 7S1 has such a size and shape that the peripheral edge 7A of the surface 7S1 can surround the peripheral edge 2DA of the surface 2S2 of the element mounting portion 2D, and the peripheral edge 7A of the surface 7S1 corresponds to the surface of the element mounting portion 2D. It is arranged so as to surround the peripheral edge 2DA of 2S2. At this time, both surfaces 7S1, 7S
2 do not have to have the same size and shape. For example, the longitudinal section in FIG. 1 may be trapezoidal. The insulating member 7 is made of, for example, Al2O3, AlN, Si having a thickness of about 0.5 mm.
It is made of a ceramic plate such as 3N4.

The insulating member 7 is fixed to the element mounting portion 2D by a brazing material (adhesive material) 6. As the brazing material 6 and the brazing material 3, a material containing no lead component, for example, a resin-based brazing material obtained by adding a curing agent or an additive, silver (Ag), or the like to an epoxy resin is used.

The sealing section 5 covers the power semiconductor element 1 and the element mounting section 2D and the like, and has a surface 7S of the insulating member 7.
It is formed in contact with 1,7S3. In particular, the insulating member 7
The surface 7S2 is not covered with the sealing portion 5 and the entire surface is exposed. The surface 7S2 of the insulating member 7 and the outer surface 5S of the sealing portion 5 are connected flat. That is, the semiconductor device 1
In the outer surface of No. 01, the surface 7S2 of the insulating member 7 does not have a concave portion.

The sealing portion 5 is made of, for example, a material such as an epoxy resin. The thermal conductivity of such an epoxy resin is 2 W / (m
.K), but alumina (A) forming the insulating member 7
The thermal conductivity of (12O3) is about 20 W / (m · K). That is, the insulating member 7 has a higher thermal conductivity than the sealing portion 5.

According to the semiconductor device 101, the following effects can be obtained. First, an insulating member 7 formed in a predetermined shape in advance is arranged on the surface 2S2 side of the element mounting portion 2D. At this time, the periphery 7A of the surface 7S1 of the insulating member 7 surrounds the periphery 2DA of the surface 2S2 of the element mounting portion 2D. For this reason, the insulating property on the surface 2S1 side of the element mounting portion 2D can be ensured by the insulating member 7.

Since the insulating member 7 has a higher thermal conductivity than the sealing portion 5, it is possible to obtain higher heat dissipation than the conventional semiconductor device 101P.

Here, the above-mentioned insulation and heat dissipation will be described with reference to specific examples. Conventional semiconductor device 10 of FIG.
In 1P, when the withstand voltage of the epoxy resin forming the sealing resin 5P is 10 kV / mm and the thickness t is 0.1 mm, the withstand voltage of the sealing resin 5PP is 1 kV. As described above, the thermal conductivity of the epoxy resin is about 2 W / (m · K), while the thermal conductivity of the ceramic forming the insulating member 7 is 20 W / (m · K).
(M · K), when the same thermal conductivity or heat radiation as the sealing resin 5PP is to be obtained, the insulating member 7 must be about 1 mm
Thickness can be set. At this time, the insulating member 7
If a ceramic having a withstand voltage of about 10 kV / mm, which is the same as that of the epoxy resin, is used, a withstand voltage of about 10 kV can be secured. Conversely, when the breakdown voltage is the same, excellent heat radiation can be obtained by the insulating member 7. Further, according to the insulating member 7, the insulating property and the heat radiation property can be simultaneously improved as compared with the conventional semiconductor device 101P.

Next, since the entire surface 7S2 of the insulating member 7 is exposed and not covered with the sealing portion 5, the following effects can be obtained. That is, according to the semiconductor device 101, unlike the conventional semiconductor device 101P (see FIG. 10), for example, when the sealing portion 5 is formed by the transfer molding method or the like, the sealing portion is formed on the surface 2S2 side of the element mounting portion 2D. There is no need to fill the material of No. 5. Therefore, the element mounting part 2
The formation failure of the sealing portion 5 does not occur on the surface 2S2 side of D. In addition, since a decrease in insulation due to such a formation failure of the sealing portion is not caused, high insulation can be obtained from this point.

Further, since it is not necessary to fill the material of the sealing portion 5 on the surface 2S2 side of the element mounting portion 2D as described above,
Fluidity requirements for the material of the sealing portion 5 can be relaxed. Further, unlike the conventional semiconductor device 101P, heat radiation from the surface 2S2 side of the element mounting portion 2D is performed via an insulating member. For this reason, the condition of thermal conductivity (heat dissipation) required for the material of the sealing portion 5 can be relaxed. Therefore, since a material that is less expensive than the conventional sealing portion 5P (see FIG. 10) can be used, the cost and price of the semiconductor device can be reduced.

Further, in the semiconductor device 101, the insulating member 7
The entire surface of the surface 7S2 is exposed, and the surface 7S2 and the outer surface 5S of the sealing portion 5 are flat. Therefore, when a heat radiating member such as a heat radiating fin (see a heat radiating member 20 in FIG. 6 described later) is provided in contact with the insulating member 7, the surface 7S2 of the insulating member 7 and the heat radiating member can be reliably brought into contact. Then, heat can be conducted to the heat radiating member through the entire surface 7S2 of the insulating member 7. Therefore, heat radiation can be stabilized and improved. Further, the semiconductor device 101
As compared with the case where the surface 7S2 of the insulating member 7 forms a concave portion on the outer surface of the above, the degree of freedom of the shape of the heat radiating member is greater.

The surface 7S2 of the insulating member 7 is
Thus, it is fixed to the element mounting portion 2D. For this reason, since the insulating member 7 and the element mounting portion 2D can be joined without a gap, the heat radiation can be stabilized and improved.

A semiconductor device provided with a metal insulating substrate instead of the insulating member 7 is disclosed in Japanese Patent Application Laid-Open No. 7-45765. The metal insulating plate includes a metal plate serving as a heat sink, an insulating layer bonded on the metal plate, and a conductor pattern formed on the insulating layer and in contact with a die pad or the like. Here, FIG. 11 schematically shows the withstand voltage-time characteristics of the insulating layer of the metal insulating substrate. As shown in FIG. 11, the insulating layer of the metal insulating substrate has a tendency that the withstand voltage decreases when a voltage is applied for a long time. On the other hand, since the insulating member 7 of the semiconductor device 101 is made of ceramic, such a tendency is not observed.

Generally, the insulating layer of the metal insulating substrate has a thickness of about 0.1 to 0.2 mm and a thermal conductivity of 1 to 3 mm.
It is about W / (m · K). On the other hand, the insulating member 7 of the semiconductor device 101 has a thickness of about 0.5 mm and a thermal conductivity of about 20 W / (m · K). In other words, according to the insulating member 7, the thickness is about 2.5 in comparison with the insulating layer.
There is an advantage that the heat dissipation is about 10 to 20 times greater, although it is up to 5 times.

A semiconductor device provided with an insulating material is disclosed in Japanese Patent Application Laid-Open No. 6-209054. However, the insulating material disclosed in the publication is different from the insulating member 7 in that the insulating material is smaller than the mounting portion (corresponding to the element mounting portion 2D). In detail, the sealing material (corresponding to the sealing portion 5) of the semiconductor device disclosed in the above publication is formed in a frame shape on the lower surface of the mounting portion, and the mounting portion exposed from the frame-shaped opening. An insulating material is disposed in contact with the lower surface of the portion. Therefore, contrary to the insulating member 7, the peripheral edge of the insulating material is disposed inside the peripheral edge of the mounting portion.

Further, the exposed surface of the insulating material (surface 7S2
Is different from the semiconductor device 101 in that a concave portion is formed on the outer surface of the semiconductor device.

<First Modification of First Embodiment> FIG. 3 is a longitudinal sectional view illustrating a first semiconductor device 101A according to the first modification. In the following description, the same reference numerals are given to the same components as those described above, and the description is used. As can be seen by comparing FIG. 3 with FIG. 1 described above, in the semiconductor device 101A, the side surface 7S3 of the insulating member 7 is formed.
Are exposed without being covered by the sealing portion 5.

The entire side surface 7S3 of the insulating member 7 may be exposed. At this time, as in the second and third semiconductor devices 101B and 101C according to the first modification shown in the vertical sectional views of FIGS. 4 and 5, the size of the insulating member 7 is changed to the semiconductor device 101 of FIG. It may be larger than etc. In the semiconductor device 101C, the periphery of the surface 7S1 of the insulating member 7 is also exposed.

According to the semiconductor devices 101A to 101C,
Since the side surface 7S3 of the insulating member 7 is further exposed, heat can be radiated directly from the side surface 7S3 without passing through the sealing portion 5. Therefore, the heat radiation can be further stabilized and improved as compared with the above-described semiconductor device 101. Also, as in the case of the semiconductor device 101, when a heat radiating member is provided in contact with the insulating member 7, the degree of freedom of the shape of the heat radiating member is large.

<Modification 2 of First Embodiment> A thin metal layer (not shown) may be provided on the surface 7S1 of the insulating member. Such a metal layer is formed by applying a metal paste and firing it. At this time, the metal layer may be formed on the entire surface on the surface 7S1, or may be formed into a pattern in various shapes.

According to the metal layer, the brazing material 6 and the insulating member 7
Therefore, the insulating member 7 and the element mounting portion 2D can be satisfactorily adhered to each other. This allows
Since the contact thermal resistance between the element mounting portion 2D and the insulating member 7 is reduced, the heat radiation via the insulating member 7 can be stabilized and improved.

When the insulating member 7 is made of ceramic, it may have a (local) undulation. In such a case, by appropriately patterning the metal layer, such undulation can be reduced or eliminated.
At this time, by providing a metal layer also on the surface 7S2 of the insulating member 7 and by controlling the thickness of each metal layer on each surface 7S1 and 7S2, it is possible to more effectively reduce and eliminate the undulation. Can be.

<Second Preferred Embodiment> FIG. 6 is a longitudinal sectional view illustrating a semiconductor device 102 according to a second preferred embodiment. In FIG. 6, the heat dissipation member 20 is provided on the semiconductor device 102.
For example, a case where a radiation fin is provided is illustrated. As can be seen by comparing FIG. 6 with FIG. 1 described above, the semiconductor device 102 includes a convex or mountain-shaped insulating member 17 instead of the insulating member 7.

In detail, the insulating member 17 is provided on each of the surfaces 7 described above.
Each surface 1 corresponding to S1, 7S2, 7S3 (see FIG. 1)
7S1, 17S2, 17S3 and the surface 17S2,1
The center of 7S1 has a convex shape with respect to its periphery.
In particular, the insulating member 17 has a convex shape protruding toward the side opposite to the element mounting portion 2D, in other words, toward the outside of the semiconductor device 102. The surface 17S2 of the insulating member 17 is provided with heat-radiating grease (thermal conductivity is 1 W / (m · K)).
(Degree) 21 is in contact with the heat radiation member 20.

The convex shape of the insulating member 17 is formed, for example, by using the above-described insulating member 7 as follows. That is, the convex shape of the insulating member 17 can be formed by applying a heat treatment in a state where a load is applied to the center of the flat insulating member 7, for example, with a weight placed on the surface 17S1. Further, such a convex shape can be formed by the metal layer described in the second modification of the first embodiment.

FIG. 7 is a longitudinal sectional view for explaining another semiconductor device 102A according to the second embodiment.
As can be seen by comparing FIG. 7 and FIG.
02A includes, instead of the insulating member 17, an insulating member 17A having a convex shape in a direction opposite to the insulating member 17.

With the two semiconductor devices 102 and 102A, the effect of the semiconductor device 101 described above can be obtained. In particular, according to the semiconductor device 102, the following effects can also be obtained.

Semiconductor devices 102 and 102A and heat radiating member 2
When contacting 0, heat insulating grease 21 is applied to insulating members 17, 17A and / or heat radiating member 20, and then both are brought into contact. At this time, in the semiconductor device 102A, the heat dissipation grease 21 may remain between the insulating member 17A and the heat dissipation member 20, and the insulating member 17A and the heat dissipation member 20 may not contact with each other. When the amount of the heat radiation grease 21 is small, a gap between the insulating member 17A and the heat radiation member 20, that is, an air layer may remain.

On the other hand, since the insulating member 17 of the semiconductor device 102 has a convex shape toward the outside, when the semiconductor device 102 and the heat radiating member 20 are brought into contact with each other, the insulating member 17 becomes unnecessary heat radiating grease. Push 21 sideways. Therefore, regardless of the amount of the heat radiation grease 21, the insulating member 1
7 can be reliably brought into contact with the heat dissipating member 20, and the heat dissipating grease 21 that is not unnecessarily thick can be disposed in an appropriate amount.

At this time, when the insulating member and the heat radiating member are in contact with each other, the heat radiating property is higher and the heat radiating grease 2 is generally used.
Considering that the thermal conductivity of the semiconductor device 10 is higher than that of the air, the semiconductor device 10 has a higher thermal conductivity than the semiconductor devices 102A, 101 and the like.
2 can reduce the thermal resistance between itself and the heat radiating member 20. Therefore, heat radiation can be stabilized and improved.

At this time, if at least the surface 17S2 of the insulating member 17 has a convex shape toward the outside of the semiconductor device 102, such an effect can be obtained. Also,
The insulating member (the surface corresponding to the surface 17S2) may have a shape corresponding to a part of a cylinder.

Third Embodiment FIGS. 8 and 9 are a vertical sectional view and a top view, respectively, for explaining a semiconductor device 103 according to a third embodiment. FIG. 8 is a longitudinal sectional view taken along the line II in FIG. Also, in FIG.
And the sealing part 5 are shown by a thick line and a broken line, respectively.

As shown in FIGS. 8 and 9, the semiconductor device 1
Reference numeral 03 further includes a control circuit 8 for controlling the power semiconductor element 1 in addition to the configuration of the semiconductor device 101 of FIG. The semiconductor device 103 is a so-called DIP type IP.
M (Intelligent Power Module).

The control circuit 8 is composed of a so-called printed circuit board (PCB) and includes, for example, a glass epoxy resin substrate having predetermined wiring and components such as a semiconductor chip, a resistor, and a capacitor connected to the wiring. Including. At this time, components such as resistors may be formed as printed components on the epoxy resin substrate. In order to avoid complication of the drawings, FIGS.
Are omitted from the illustration.

The control circuit 8 controls the control circuit 8 of the electrode frame 2.
Is fixed to the element mounting portion 2D2 for use with a brazing material 9, and a thin metal wire 4 connects between the control circuit 8 and the lead portion 2L.

As described above, since the semiconductor device 103 includes the semiconductor element 1 and the control circuit 8, it is possible to achieve a higher function than the semiconductor device 101 and the like.

<Summary> It should be noted that the above-described effects can be obtained also in a semiconductor device having a semiconductor element which is not for power but generates relatively large heat instead of the power semiconductor element 1.

[0052]

(1) According to the first aspect of the present invention,
An insulating member (preformed in a predetermined shape) is disposed on the other surface side of the element mounting portion, and a periphery of the first surface of the insulating member surrounds a periphery of the other surface of the element mounting portion. In. Therefore, the insulating property on the other surface side of the element mounting portion can be ensured by the insulating member.

Further, the entire surface of the second surface of the insulating member is exposed and is not covered by the sealing portion. That is, unlike the conventional semiconductor device in which the sealing member is formed so as to cover the other surface of the element mounting portion of the electrode frame without the insulating member, the sealing portion is formed by, for example, a transfer molding method. In this case, it is not necessary to fill the other surface side of the element mounting portion with the material of the sealing portion. Therefore, there is no occurrence of a failure in forming the sealing portion on the other surface side of the element mounting portion. In addition, since a decrease in insulation due to such a formation failure of the sealing portion is not caused, high insulation can be obtained from this point.

Further, as described above, it is not necessary to fill the other surface side of the element mounting portion with the material of the sealing portion, so that the fluidity condition required for the material of the sealing portion can be relaxed. Further, unlike the conventional semiconductor device, heat radiation from the other surface side of the element mounting portion is performed via the insulating member.
For this reason, the condition of thermal conductivity (heat dissipation) required for the material of the sealing portion can be relaxed. Therefore, since a material that is less expensive than the conventional sealing portion can be used, the cost and price of the semiconductor device can be reduced.

(2) According to the second aspect of the invention, the second
The surface and the outer surface of the sealing part are flat. For this reason, when the heat radiating member is provided in contact with the insulating member, the second surface of the insulating member and the heat radiating member can be reliably brought into contact with each other, and heat is transmitted to the heat radiating member through the entire second surface of the insulating member. be able to. Therefore, heat radiation can be stabilized and improved. In addition, the degree of freedom of the shape of the heat radiating member is greater than when the second surface of the insulating member forms a concave portion on the outer surface of the semiconductor device.

(3) According to the third aspect of the present invention, since the third surface of the insulating member is further exposed, heat can be directly radiated from the third surface. Therefore, heat radiation can be stabilized and improved. Further, when the heat radiating member is provided in contact with the insulating member, the degree of freedom of the shape of the heat radiating member is greater than when the second surface of the insulating member forms a concave portion on the outer surface of the semiconductor device.

(4) According to the invention of claim 4, the insulating member is fixed to the element mounting portion with an adhesive. For this reason, since the insulating member and the element mounting portion can be joined without a gap, the heat radiation can be stabilized and improved.

(5) According to the fifth aspect of the invention, the thermal conductivity of the insulating member is higher than that of the sealing portion. Therefore, higher heat dissipation can be obtained as compared with the conventional semiconductor device.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view illustrating a semiconductor device according to a first embodiment.

FIG. 2 is a top view illustrating the semiconductor device according to the first embodiment;

FIG. 3 is a longitudinal sectional view for explaining a first semiconductor device according to a first modification of the first embodiment;

FIG. 4 is a longitudinal sectional view illustrating a second semiconductor device according to a first modification of the first embodiment;

FIG. 5 is a longitudinal sectional view for explaining a third semiconductor device according to a first modification of the first embodiment;

FIG. 6 is a longitudinal sectional view illustrating a semiconductor device according to a second embodiment.

FIG. 7 is a longitudinal sectional view for explaining another semiconductor device according to the second embodiment.

FIG. 8 is a longitudinal sectional view illustrating a semiconductor device according to a third embodiment.

FIG. 9 is a top view illustrating a semiconductor device according to a third embodiment.

FIG. 10 is a longitudinal sectional view illustrating a conventional semiconductor device.

FIG. 11 is a schematic diagram for explaining a withstand voltage-time characteristic of an insulating layer of a metal insulating substrate.

[Explanation of symbols]

1 Power semiconductor element (semiconductor element), 2 electrode frame, 2D element mounting section, 2DA, 7A peripheral edge, 2L lead section, 2S1 surface (one surface), 2S2 surface (other surface), 5 sealing portion, 5S Outer surface, 6 brazing material (adhesive), 7, 17, 17A insulating member, 7S1, 1
7S1 surface (first surface), 7S2, 17S2 surface (second surface), 7S3, 17S3 surface (third surface),
101 to 103, 101A to 101C, 102A Power semiconductor device (semiconductor device).

Claims (5)

[Claims] An electrode frame having an element mounting portion and a lead portion; a semiconductor element mounted on one surface of the element mounting portion; and a peripheral edge surrounding a peripheral edge of the other surface of the element mounting portion. An insulating member having a first surface facing the other surface and a second surface facing the first surface, the insulating member being fixed to the element mounting portion; and an entire surface of the second surface of the insulating member. A semiconductor device comprising: a sealing portion formed in contact with the insulating member in an exposed state and covering the semiconductor element. 2. The semiconductor device according to claim 1, wherein the second surface and an outer surface of the sealing portion are flat. 3. The semiconductor device according to claim 1, wherein the insulating member has a third surface forming a side surface between the first surface and the second surface, and the third surface further comprises: A semiconductor device, which is exposed. 4. The semiconductor device according to claim 1, wherein the insulating member is fixed to the element mounting portion with an adhesive. 5. The semiconductor device according to claim 1, wherein said insulating member has a higher thermal conductivity than said sealing portion.