JP2737187B2 - Processing method of ceramics - Google Patents
Processing method of ceramicsInfo
- Publication number
- JP2737187B2 JP2737187B2 JP63314149A JP31414988A JP2737187B2 JP 2737187 B2 JP2737187 B2 JP 2737187B2 JP 63314149 A JP63314149 A JP 63314149A JP 31414988 A JP31414988 A JP 31414988A JP 2737187 B2 JP2737187 B2 JP 2737187B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mgal
- ceramics
- ceramic
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】 〔概要〕 セラミックスの処理方法に係り，複雑な形状をしたア
ルミナ（Al2O3）基板の表面処理を行う方法に関し， バイアホール等を持つセラミックス表面全体に緩衝物
質MgAl2O4（スピネル）の層を形成して，基板上に安定
して導電膜を形成できることを目的とし， アルミナ（Al2O3）を主成分とするセラミックスをマ
グネシア（MgO）粉末で覆い，加熱処理を行うように構
成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for treating ceramics, and to a method for treating a surface of an alumina (Al 2 O 3 ) substrate having a complicated shape. With the aim of forming a layer of 2 O 4 (spinel) and forming a conductive film stably on the substrate, ceramics mainly composed of alumina (Al 2 O 3 ) are covered with magnesia (MgO) powder. The heat treatment is performed.
本発明はセラミックスの処理方法に係り，複雑な形状
をしたアルミナ（Al2O3）基板の表面処理を行う方法に
関する。The present invention relates to a method for treating ceramics, and more particularly, to a method for performing surface treatment on an alumina (Al 2 O 3 ) substrate having a complicated shape.
セラミックス，特にアルミナ基板は電子システムの回
路基板として広く用いられている。Ceramics, especially alumina substrates, are widely used as circuit boards for electronic systems.
セラミック基板に配線を形成するには，基板上に蒸着
等を用いて薄膜を形成し，エッチング技術を用いて配線
パターンを形成する方法，配線導体を主成分としたペー
ストを印刷技術により基板上に印刷パターンを作製し，
焼成し厚膜パターンを形成する方法等がある。In order to form wiring on a ceramic substrate, a method of forming a thin film on the substrate by vapor deposition or the like, forming a wiring pattern using etching technology, and applying a paste mainly composed of wiring conductors on the substrate by printing technology Make a print pattern,
There is a method of baking to form a thick film pattern.
Cu,Mo等の常伝導体やＹ−Ba−Cu−Ｏ系,Bi−Sr−Ca−
Cu−Ｏ系等の超伝導体の膜を基板上に形成する際，膜と
基板間の化学反応等の相互作用により，目的の物質が均
一組成で得られず，所要の導体の性能が発揮できないこ
とがある。Normal conductors such as Cu and Mo, Y-Ba-Cu-O, Bi-Sr-Ca-
When a Cu-O or other superconductor film is formed on a substrate, the desired material cannot be obtained with a uniform composition due to the interaction between the film and the substrate, such as a chemical reaction. There are things you can't do.
基板と膜間の化学反応を抑制するために，膜と反応し
にくい緩衝物質を膜と基板間に形成することが考えられ
る。In order to suppress the chemical reaction between the substrate and the film, it is conceivable to form a buffer substance that does not easily react with the film between the film and the substrate.
更に，膜と基板間の熱膨張の差が大きく，それによる
応力を吸収できない場合は，膜と基板の中間の熱膨張係
数を持つ物質や，応力緩和のしやすい物質を緩衝物質と
して膜と基板間に形成することが考えられる。Furthermore, if the difference in thermal expansion between the film and the substrate is large and the resulting stress cannot be absorbed, a material having a thermal expansion coefficient between that of the film and the substrate, or a material that easily relaxes the stress, is used as a buffer material. It is conceivable to form between them.
このような緩衝層を形成する手法としては，通常の薄
膜や厚膜を形成する方法で緩衝層を形成することができ
る。As a method of forming such a buffer layer, the buffer layer can be formed by a usual method of forming a thin film or a thick film.
例えば，緩衝層としてMgAl2O4層を形成するには，物
理蒸着によりMgAl2O4の各成分を蒸着する方法，又,MgAl
2O4の粉末とビヒクルを混合してペーストを作製し，こ
のペーストを基板上に印刷し，焼結する方法等がある。For example, to form a MgAl 2 O 4 layer as a buffer layer, a method of depositing each component of MgAl 2 O 4 by physical vapor deposition,
There is a method in which a paste is prepared by mixing a powder of 2 O 4 and a vehicle, and the paste is printed on a substrate and sintered.
しかし，これらの方法は，複雑な形状のものにMgAl2O
4層を均一に形成することは困難であるという欠点があ
る。However, these methods use MgAl 2 O for complicated shapes.
There is a disadvantage that it is difficult to form four layers uniformly.
しかし上記の従来法では，配線層を複数にして，層間
の配線を接続するためにバイア（via）ホールを基板に
形成する場合は，バイアホール部に緩衝層を形成するこ
とはしばしば困難であるという欠点がある。However, in the above-mentioned conventional method, it is often difficult to form a buffer layer in a via hole when a plurality of wiring layers are used and a via hole is formed in a substrate to connect wiring between layers. There is a disadvantage that.
本発明はバイアホール等の非平坦部分を持つアルミナ
を主成分とするセラミック基板においても，セラミック
ス表面全体に緩衝物質MgAl2O4の層を形成する方法を提
供することを目的とする。An object of the present invention is to provide a method of forming a buffer material MgAl 2 O 4 layer over the entire ceramic surface even on a ceramic substrate mainly composed of alumina having a non-flat portion such as a via hole.
上記課題の解決は，アルミナ（Al2O3）を主成分とす
るセラミックスをマグネシア（MgO）粉末で覆い，加熱
処理を施して，該セラミックスの表面にスピネル（MgAl
2O4）の層を形成することを特徴とするセラミックスの
処理方法により達成される。In order to solve the above-mentioned problem, a ceramic mainly composed of alumina (Al 2 O 3 ) is covered with magnesia (MgO) powder, heat-treated, and a spinel (MgAl
This is achieved by a ceramic processing method characterized by forming a layer of 2 O 4 ).
本発明は緩衝物質MgAl2O4がMgOと基板を構成するAl2O
3との固相反応で生成でき，又MgO粉末が流動性を持ち，
複雑形状のセラミックス表面を覆うことができることを
利用し，複雑な形状をしたAl2O3の表面をMgAl2O4（スピ
ネル）化できるようにしたものである。In the present invention, the buffer substance MgAl 2 O 4 is composed of MgO and Al 2 O
3 can be produced by solid-phase reaction with MgO powder.
By taking advantage of the ability to cover ceramics with complex shapes, the surface of Al 2 O 3 with complex shapes can be converted to MgAl 2 O 4 (spinel).
MgAl2O4はAl2O3に比較して酸，塩基物質に対して化学
的安定度が大きい状態で使用できる。従って,Al2O3の表
面にMgAl2O4層を設けることにより，直接Al2O3が外界と
化学反応することを抑えることができる。MgAl 2 O 4 can be used in a state where its chemical stability is higher with respect to acid and base substances than Al 2 O 3 . Accordingly, Al by providing a MgAl 2 O 4 layer on the surface of the 2 O 3, it is possible to suppress the direct Al 2 O 3 is outside the chemical reaction.
第１図は本発明の工程を説明するブロック図である。 FIG. 1 is a block diagram illustrating the steps of the present invention.
孔開け加工をした純度99.7％の焼結Al2O3基板１と，
純度99.9％で平均粒径0.2μｍのMgO粉末２を用意する。A 99.7% pure sintered Al 2 O 3 substrate 1
An MgO powder 2 having a purity of 99.9% and an average particle size of 0.2 μm is prepared.
次に第２図に示すように，基板１の表面をMgO粉末２
で覆うカバリング３を行う。Next, as shown in FIG.
Covering 3 to cover with is performed.
次に，大気中で1300℃で２時間の熱処理４を行う。 Next, heat treatment 4 is performed at 1300 ° C. for 2 hours in the air.
ここで，熱処理温度は1200〜1500℃の範囲で行うこと
が適当である。Here, it is appropriate to perform the heat treatment at a temperature in the range of 1200 to 1500 ° C.
1500℃以上になると基板の変形が大きくなったり,MgO
粉末がAl2O3基板に固着され始める。又,1200℃以下にな
ると目的とするMgAl2O4化の固相反応が促進されにくく
なる。If the temperature exceeds 1500 ° C, the deformation of the substrate will increase,
The powder begins to stick to the Al 2 O 3 substrate. On the other hand, when the temperature is 1200 ° C. or lower, the desired solid phase reaction of converting into MgAl 2 O 4 becomes difficult to be promoted.
第２図は上記工程中のカバリングの状態を示す断面図
である。FIG. 2 is a cross-sectional view showing a covering state during the above process.
図において,1はAl2O3基板,2はMgO粉末,12はバイアホ
ール,5はセラミックス製の容器である。In the figure, 1 is an Al 2 O 3 substrate, 2 is MgO powder, 12 is a via hole, and 5 is a ceramic container.
図示のように，バイアホール12を持つAl2O3基板１
は，セラミックス製の容器５内に盛られたMgO粉末２内
に埋め込まれた状態で，容器５を電気炉に入れて加熱す
る。As shown, Al 2 O 3 substrate 1 with via holes 12
Is heated by placing the container 5 in an electric furnace while being embedded in the MgO powder 2 piled in the ceramic container 5.
この実施例によると，基板の平坦部分だけでなく，バ
イアホールの表面も含めて，基板表面全体をMgAl2O4化
できる。According to this embodiment, not only the flat portion of the substrate but also the entire surface of the substrate including the surface of the via hole can be made into MgAl 2 O 4 .
以上説明したように本発明によれば，バイアホール等
の非平坦部分を持つアルミナを主成分とするセラミック
基板においても，セラミックス表面全体に緩衝物質MgAl
2O4の層を形成することができる。As described above, according to the present invention, even in a ceramic substrate mainly composed of alumina having a non-flat portion such as a via hole, the buffer material MgAl is formed on the entire ceramic surface.
A layer of 2 O 4 can be formed.
これにより，基板上に安定した組成の導電膜を形成す
ることができる。Thus, a conductive film having a stable composition can be formed on the substrate.
第１図は本発明の工程を説明するブロック図， 第２図は上記工程中のカバリングの状態を示す断面図で
ある。 図において， １はAl2O3基板， 12はバイアホール， ２はMgO粉末， ３はカバリング， ４は熱処理， ５はカバリング用セラミックス製の容器 である。FIG. 1 is a block diagram illustrating a process of the present invention, and FIG. 2 is a cross-sectional view showing a covering state during the above process. In the figure, 1 is an Al 2 O 3 substrate, 12 is a via hole, 2 is MgO powder, 3 is covering, 4 is heat treatment, and 5 is a ceramic container for covering.
Claims (1)
ックスをマグネシア（MgO）粉末で覆い，加熱処理を施
して，該セラミックスの表面にスピネル（MgAl2O4）の
層を形成することを特徴とするセラミックスの処理方
法。1. A ceramic containing alumina (Al 2 O 3 ) as a main component is covered with magnesia (MgO) powder and subjected to a heat treatment to form a spinel (MgAl 2 O 4 ) layer on the surface of the ceramic. A method for treating ceramics, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63314149A JP2737187B2 (en) | 1988-12-13 | 1988-12-13 | Processing method of ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63314149A JP2737187B2 (en) | 1988-12-13 | 1988-12-13 | Processing method of ceramics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02160681A JPH02160681A (en) | 1990-06-20 |
| JP2737187B2 true JP2737187B2 (en) | 1998-04-08 |
Family
ID=18049819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63314149A Expired - Lifetime JP2737187B2 (en) | 1988-12-13 | 1988-12-13 | Processing method of ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2737187B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9117152D0 (en) * | 1991-08-07 | 1991-09-25 | Heatrae Sadia Heating Ltd | Heater for liquid |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113680A (en) * | 1979-02-19 | 1980-09-02 | Tokyo Shibaura Electric Co | Manufacture of ceramic fiber having compounded layer |
| JPS60166262A (en) * | 1984-02-07 | 1985-08-29 | 日立化成工業株式会社 | Surface activation treatment of alumina ceramics |
| JPS62128988A (en) * | 1985-11-27 | 1987-06-11 | 株式会社神戸製鋼所 | Manufacture of alumina antiabrasive |
-
1988
- 1988-12-13 JP JP63314149A patent/JP2737187B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02160681A (en) | 1990-06-20 |
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