JPH03275567A - Production of aluminum nitride sintered body - Google Patents
Production of aluminum nitride sintered bodyInfo
- Publication number
- JPH03275567A JPH03275567A JP2075088A JP7508890A JPH03275567A JP H03275567 A JPH03275567 A JP H03275567A JP 2075088 A JP2075088 A JP 2075088A JP 7508890 A JP7508890 A JP 7508890A JP H03275567 A JPH03275567 A JP H03275567A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- sintered body
- mounting table
- nitride sintered
- green sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000010304 firing Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000011819 refractory material Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 abstract description 9
- 239000012298 atmosphere Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 description 1
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 1
- 239000005997 Calcium carbide Substances 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002602 lanthanoids Chemical group 0.000 description 1
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- CLZWAWBPWVRRGI-UHFFFAOYSA-N tert-butyl 2-[2-[2-[2-[bis[2-[(2-methylpropan-2-yl)oxy]-2-oxoethyl]amino]-5-bromophenoxy]ethoxy]-4-methyl-n-[2-[(2-methylpropan-2-yl)oxy]-2-oxoethyl]anilino]acetate Chemical compound CC1=CC=C(N(CC(=O)OC(C)(C)C)CC(=O)OC(C)(C)C)C(OCCOC=2C(=CC=C(Br)C=2)N(CC(=O)OC(C)(C)C)CC(=O)OC(C)(C)C)=C1 CLZWAWBPWVRRGI-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば、高熱伝導率セラミック絶縁基板と
して用いられる窒化アルミニウム焼結体の製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing an aluminum nitride sintered body used as, for example, a high thermal conductivity ceramic insulating substrate.
ＩＣ等に代表される半導体素子の高集積化や大電力化が
進み、これに伴って放熱性の良い電気絶縁材料が要求さ
れるようになった。このような電気絶縁材料として、窒
化アルミニウム焼結体からなる窒化アルミニウム基板が
あるが、この基板は、熱伝導性、熱膨張性、電気絶縁性
等の点で優れていることから実用化も進んでいる。BACKGROUND ART As semiconductor devices such as ICs and the like have become more highly integrated and have more power, electrical insulating materials with good heat dissipation properties have become required. An example of such an electrically insulating material is an aluminum nitride substrate made of sintered aluminum nitride, and this substrate is being put into practical use because of its excellent thermal conductivity, thermal expansion, electrical insulation, etc. I'm here.
窒化アルさニウム焼結体は、窒化アルミニウムのグリー
ンシートを載置台上に乗せて坑底することにより得られ
る。窒化アルミニウムのグリーンシートは窒化アル主ニ
ウム粉末を焼結助剤などとともに底形・乾燥することで
得られる。窒化アルミニウム粉末は、例えば、市販のも
の、あるいは、アルミニウム含有化合物（例えば、塩基
性塩化アルえニウム）と炭素含有化合物（例えば、グル
コース）との混合水溶液を乾燥して得た混合物を焼成し
て作るものなどがある。The aluminum nitride sintered body is obtained by placing a green sheet of aluminum nitride on a mounting table and sinking it to the bottom of a pit. Aluminum nitride green sheets are obtained by flattening and drying aluminum nitride-based powder together with sintering aids. Aluminum nitride powder is, for example, commercially available, or is obtained by baking a mixture obtained by drying a mixed aqueous solution of an aluminum-containing compound (for example, basic arenium chloride) and a carbon-containing compound (for example, glucose). There are things to make.
従来、焼成の際にグリーンシートを乗せる載置台として
、ｈ−ＢＮ材を用いた載置台が用いられているが、ｈ−
ＢＮ材は極めて高価であり、また、グリーンシートとの
間で反応が起き易いといった不都合もある。Ａ１．ｏｓ
などの酸化物系材料の載置台も検討されているが、得ら
れる焼結体のＡＩＮ純度を低下させ、熱伝導などの特性
を劣化させてしまうという問題がある。Conventionally, a mounting table using h-BN material has been used as a mounting table on which the green sheet is placed during firing, but h-
BN material is extremely expensive and also has the disadvantage that it tends to react with the green sheet. A1. os
Mounting tables made of oxide-based materials such as oxide-based materials have also been considered, but these have the problem of lowering the AIN purity of the resulting sintered body and deteriorating properties such as heat conduction.
この発明は、上記事情に鑑み、焼成の際に載置台とグリ
ーンシートとの間で反応を起こさずに正常な窒化アルミ
ニウム焼結体を得ることのできる方法を提供することを
課題とする。In view of the above circumstances, it is an object of the present invention to provide a method capable of obtaining a normal aluminum nitride sintered body without causing a reaction between the mounting table and the green sheet during firing.
前記課題を解決するため、請求項１〜３記載の窒化アル
ミニウム焼結体の製造方法では、焼成の際に窒化アルミ
ニウムのグリーンシートを乗せる載置台として、少なく
ともグリーンシート載置面が難反応性材料で形成されて
いるものを用いるようにしている。In order to solve the above problems, in the method for manufacturing an aluminum nitride sintered body according to claims 1 to 3, at least the green sheet mounting surface is made of a non-reactive material as a mounting table on which a green sheet of aluminum nitride is placed during firing. I try to use one that is made of.
載置台は、全体が難反応性の材料で形成されていてもよ
い（例えば、ＴａＮ板などが例示される〉が、例えば、
請求項２のように、カーボン、グラファイトのうらのひ
とつからなる板材片面（あるいは両面）に難反応性材料
をコーティングしたもののように、難反応性材料が部分
的に使われているようであってもよい。コーティングの
場合には、コーティング厚みが０．５μ日以上あること
が望ましい。The mounting table may be entirely formed of a material with low reactivity (for example, a TaN plate is exemplified), but, for example,
As claimed in claim 2, it seems that a non-reactive material is partially used, such as one side (or both sides) of a plate made of one of the backs of carbon or graphite coated with a non-reactive material. Good too. In the case of coating, it is desirable that the coating thickness is 0.5 μday or more.
この発明における難反応性材料としては、具体的には、
例えば、請求項３のように、ＴｉＣ，ＡＡＮ（純度のよ
いもの） 、Ｔ ａ Ｎ 、Ｓ ｉＣ％ ｐ−ＢＮ、Ｍ
ｏ、Ｗなどが挙げられ、これらの材料が単独であるいは
併用される。Specifically, the refractory materials in this invention include:
For example, as in claim 3, TiC, AAN (of high purity), TaN, SiC% p-BN, M
o, W, etc., and these materials may be used alone or in combination.
この発明での焼成は、非酸化性雰囲気（例えば、窒素ガ
ス雰囲気、窒素を含むアルゴン雰囲気、アンモニア雰囲
気など）で行われ、通常、１７００〜１９００℃程度の
温度、２〜１０時間の焼成条件である。Firing in this invention is performed in a non-oxidizing atmosphere (e.g., nitrogen gas atmosphere, nitrogen-containing argon atmosphere, ammonia atmosphere, etc.), and is usually performed at a temperature of about 1700 to 1900°C for 2 to 10 hours. be.
載置台（センター）には、グリーンシートを１枚だけ乗
せることもあるが、複数枚のグリーンシートを積み重ね
て乗せ、−度に多数枚の窒化アルミニウム焼結体を得る
ようにしてもよい。Although only one green sheet may be placed on the mounting table (center), a plurality of green sheets may be stacked and placed on top of each other to obtain a large number of aluminum nitride sintered bodies at one time.
また、グリーンシートに含まれる焼結助剤としては、イ
ツトリウムやランタニド族元素などの希土類元素化合物
やアルカリ土類元素化合物、例えば、酸化イツトリウム
、塩化イツトリウム、硝酸イツトリウム、塩基性酢酸イ
ツトリウム、酸化カルシウム、カルシウム−カーバイド
、塩化カルシウム、硝酸カルシウムなどが例示される。In addition, the sintering aids contained in the green sheet include rare earth element compounds such as yttrium and lanthanide group elements, and alkaline earth element compounds, such as yttrium oxide, yttrium chloride, yttrium nitrate, basic yttrium acetate, calcium oxide, Examples include calcium carbide, calcium chloride, and calcium nitrate.
この発明は、上記例示の材料や処理条件に限らないこと
はいうまでもない。また、得られた窒化アルミニウム焼
結体の用途も、前記した絶縁基板として使われる窒化ア
ルミニウム基板用途に限らない。It goes without saying that the present invention is not limited to the materials and processing conditions exemplified above. Further, the use of the obtained aluminum nitride sintered body is not limited to the above-mentioned use of an aluminum nitride substrate used as an insulating substrate.
この発明の製造方法では、少なくともグリーンシート載
置面が難反応性材料で形成されてなる載置台を用いるよ
うにしているため、焼成の際、グリーンシートと載置台
の間の反応が効果的に抑制される。In the manufacturing method of the present invention, a mounting table whose at least the green sheet mounting surface is made of a non-reactive material is used, so that the reaction between the green sheet and the mounting table is effectively prevented during firing. suppressed.
載置台が、カーボン、グラファイトのうらのひとつから
なる板材表面に難反応性材料をコーティングした構成で
ある場合、難反応性材料が少なくてすみ、その分、載置
台が安価なものになるという利点がある。If the mounting table has a structure in which the surface of a plate made of carbon or graphite is coated with a non-reactive material, the advantage is that the amount of non-reactive material can be reduced, making the mounting table less expensive. There is.
ＴｉＣ，ＡＩＮＸＴａＮ、Ｓ ｉｃ、ｐ−ＢＮ。TiC, AINXTaN, Sic, p-BN.
Ｍｏ、Ｗなどの難反応性材料は、従来のｈ−ＢＮに比べ
れば安い材料であるから、やはり、載置台が安価なもの
となるという利点がある。Since refractory materials such as Mo and W are cheaper than conventional h-BN, they have the advantage that the mounting table can be made inexpensive.
以下、この発明の詳細な説明する。 The present invention will be explained in detail below.
実施例１−
載置台として、カーボン製板材（厚み２論−）の片面に
厚み１０ｐｍでＴｉＣをコーティングしたものを用いた
。この載置台のＴ ｉ Ｃコーテイング面に、ＹｘＯｓ
（焼結助剤）を５ｗｔ％含有する（窒化アルミニウム）
グリーンシートを乗せて、Ｎ。Example 1 - As a mounting table, a carbon plate material (thickness 2-2) coated with TiC on one side to a thickness of 10 pm was used. YxOs is applied to the T i C coating surface of this mounting table.
Contains 5wt% (sintering aid) (aluminum nitride)
Put the green sheet on, N.
中、１９００℃、３時間焼成し窒化アル文ニウム焼結体
を得た。The aluminum nitride sintered body was obtained by firing at 1900° C. for 3 hours.
一実施例２−
載置台として、グラファイト製板材（厚み５ｕ）の片面
に厚み１０ＪＩｍでＴｉＣをコーティングしたものを用
いた。この載置台のＴｉＣコーテイング面に、Ｙ＊Ｏ＊
（焼結助剤）を５ｗｔ％含有する（窒化アルミニウム）
グリーンシートを乗せて、Ｎ、中、１９００℃、６時間
焼成し窒化アルミニウム焼結体を得た。Example 2 - As a mounting table, a graphite plate material (thickness 5u) coated with TiC on one side to a thickness of 10JIm was used. On the TiC coating surface of this mounting table, Y*O*
Contains 5wt% (sintering aid) (aluminum nitride)
A green sheet was placed thereon, and the mixture was fired at 1900° C. for 6 hours under nitrogen to obtain an aluminum nitride sintered body.
実施例３
載置台として、ＴａＮ板（厚み５ｍｍ）を用いた。この
載置台に、Ｙｇｏｓ（焼結助剤〉を５ｗｔ％含有する（
窒化アルミニウム）グリーンシートを乗せて、Ｎ８中、
１８００ｔ、３時間焼成し窒化アルミニウム焼結体を得
た。Example 3 A TaN plate (thickness: 5 mm) was used as a mounting table. This mounting table contains 5 wt% of Ygos (sintering aid) (
Place a green sheet (aluminum nitride) in N8,
The aluminum nitride sintered body was obtained by firing at 1800 tons for 3 hours.
一実施例４−
載置台として、グラファイト製板材（厚み５關）の片面
に厚み１０μｌでＡＩ！Ｎをコーティングしたものを用
いた。この載置台のＡＩＮコーティング面に、Ｙ、Ｏ，
（焼結助剤）を５ｗｔ％含有する（窒化アルミニウム〉
グリーンシートを乗せて、Ｎ２中、１８００℃、６時間
焼成し窒化アルミニウム焼結体を得た。Example 4 - As a mounting table, AI! was placed on one side of a graphite board (thickness: 5 mm) with a thickness of 10 μl. A material coated with N was used. Y, O,
Contains 5wt% (sintering aid) (aluminum nitride)
A green sheet was placed thereon and fired in N2 at 1800°C for 6 hours to obtain an aluminum nitride sintered body.
比較例１
載置台として、ｈ−ＢＮ板を用いた。この載置台に、Ｙ
、Ｏ，（焼結助剤〉を５ｗｔ％含有する（窒化アルミニ
ウム）グリーンシートを乗せて、Ｎ、中、１８００℃、
３時間焼成し窒化アルミニウム焼結体を得た。Comparative Example 1 An h-BN plate was used as a mounting table. On this mounting stand, Y
A green sheet (aluminum nitride) containing 5 wt% of , O, (sintering aid) was placed on top, and N was heated at 1800°C in medium.
The aluminum nitride sintered body was obtained by firing for 3 hours.
焼成後、実施例１〜４の載置台のグリーンシート載置面
を観察したところ、反応の跡は認められなかったが、比
較例１の載置台のグリーンシート載置面には若干反応の
跡が認められた。After baking, when the green sheet mounting surface of the mounting table of Examples 1 to 4 was observed, no trace of reaction was observed, but there was some trace of reaction on the green sheet mounting surface of the mounting table of Comparative Example 1. was recognized.
なお、焼成の際に載置台に変形が起こると使えなくなる
のであるが、焼成後の実施例１〜４の載置台には変形は
認められず、焼成前と同し形状を維持していた。Note that if the mounting table is deformed during firing, it becomes unusable, but the mounting tables of Examples 1 to 4 after firing did not show any deformation and maintained the same shape as before firing.
以上に述べたように、請求項１〜３記載の発明にかかる
方法では、焼成の際、グリーンシートと載置台の間の反
応が効果的に抑制されるため、載置台の寿命が長く何度
も繰り返し用いて、正常な窒化アルミニウム焼結体を次
ぎ々と製造することができる。As described above, in the method according to the invention according to claims 1 to 3, the reaction between the green sheet and the mounting table is effectively suppressed during firing, so that the life of the mounting table is long and the number of cycles is increased. By repeatedly using the method, normal aluminum nitride sintered bodies can be manufactured one after another.
請求項２記載の発明にかかる方法では、載置台に使われ
る難反応性材料の量が少なくてすむため、載置台が安価
であるという利点がある。The method according to the second aspect of the invention has the advantage that the mounting table is inexpensive because the amount of refractory material used for the mounting table is small.
請求項３記載の発明にかかる方法では、載置台に使われ
る難反応性材料が安い材料であるため、載置台も安価で
あるという利点がある。In the method according to the third aspect of the invention, since the refractory material used for the mounting table is a cheap material, there is an advantage that the mounting table is also inexpensive.
Claims (1)
せて焼成し窒化アルミニウム焼結体を得る方法において
、前記載置台として、少なくともグリーンシート載置面
が難反応性材料で形成されているものを用いるようにす
ることを特徴とする窒化アルミニウム焼結体の製造方法
。 ２ 載置台が、カーボン、グラファイトのうらのひとつ
からなる板材表面に難反応性材料をコーティングしてな
るものである請求項１記載の窒化アルミニウム焼結体の
製造方法。 ３ 難反応性材料が、ＴｉＣ、ＡｌＮ、ＴａＮ、ＳｉＣ
、ｐ−ＢＮ、Ｍｏ、Ｗのうちの少なくともひとつである
請求項１または２記載の窒化アルミニウム焼結体の製造
方法。[Claims] 1. A method for obtaining an aluminum nitride sintered body by placing an aluminum nitride green sheet on a mounting table and firing it, wherein the mounting table has at least a green sheet mounting surface formed of a non-reactive material. A method for producing an aluminum nitride sintered body, characterized in that the aluminum nitride sintered body is made of aluminum nitride. 2. The method for producing an aluminum nitride sintered body according to claim 1, wherein the mounting table is formed by coating the surface of a plate made of one of carbon and graphite with a refractory material. 3 Refractory materials include TiC, AlN, TaN, and SiC.
, p-BN, Mo, and W. The method for producing an aluminum nitride sintered body according to claim 1 or 2, wherein the aluminum nitride sintered body is at least one of p-BN, Mo, and W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2075088A JPH03275567A (en) | 1990-03-22 | 1990-03-22 | Production of aluminum nitride sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2075088A JPH03275567A (en) | 1990-03-22 | 1990-03-22 | Production of aluminum nitride sintered body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03275567A true JPH03275567A (en) | 1991-12-06 |
Family
ID=13566066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2075088A Pending JPH03275567A (en) | 1990-03-22 | 1990-03-22 | Production of aluminum nitride sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03275567A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5932043A (en) * | 1997-03-18 | 1999-08-03 | International Business Machines Corporation | Method for flat firing aluminum nitride/tungsten electronic modules |
| JP2011236102A (en) * | 2010-05-13 | 2011-11-24 | Tokuyama Corp | Jig for burning aluminum nitride |
| JP2012232876A (en) * | 2011-05-09 | 2012-11-29 | Hirohata Furnace Co Ltd | Method for manufacturing aluminum nitride sintered body |
| CN109082549A (en) * | 2018-10-26 | 2018-12-25 | 北京理工大学 | A kind of preparation method of easy reacting aluminum/tungsten active material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH035376A (en) * | 1989-05-31 | 1991-01-11 | Showa Denko Kk | Production of aluminum nitride sintered compact |
| JPH03197367A (en) * | 1989-12-26 | 1991-08-28 | Showa Denko Kk | Preparation of aluminum nitride sintered product |
-
1990
- 1990-03-22 JP JP2075088A patent/JPH03275567A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH035376A (en) * | 1989-05-31 | 1991-01-11 | Showa Denko Kk | Production of aluminum nitride sintered compact |
| JPH03197367A (en) * | 1989-12-26 | 1991-08-28 | Showa Denko Kk | Preparation of aluminum nitride sintered product |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5932043A (en) * | 1997-03-18 | 1999-08-03 | International Business Machines Corporation | Method for flat firing aluminum nitride/tungsten electronic modules |
| JP2011236102A (en) * | 2010-05-13 | 2011-11-24 | Tokuyama Corp | Jig for burning aluminum nitride |
| JP2012232876A (en) * | 2011-05-09 | 2012-11-29 | Hirohata Furnace Co Ltd | Method for manufacturing aluminum nitride sintered body |
| CN109082549A (en) * | 2018-10-26 | 2018-12-25 | 北京理工大学 | A kind of preparation method of easy reacting aluminum/tungsten active material |
| CN109082549B (en) * | 2018-10-26 | 2020-08-11 | 北京理工大学 | Preparation method of easy-reaction aluminum/tungsten active material |
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