JP2684863B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device constructed by using a heat sink to which external lead terminals are attached, and more particularly to a structure for positioning and supporting this heat sink.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device such as a hybrid IC, a structure as shown in a perspective view of FIG. 3 has been adopted.
On the surface of the secondary heat sink 1 made of a plate material such as copper,
Ceramics which are rectangular in plan view or Ranaru insulating plate 2
And a primary heat sink 3 made of a copper plate having a rectangular shape in plan view and having a predetermined thickness, and a semiconductor chip 4 such as a power transistor, which are sequentially stacked, and each of which is soldered and connected to each other. ing. Here, an insulating plate positioning projection 5 for positioning and supporting the insulating plate 2 is formed at a predetermined position of the secondary heat sink 1 on which the insulating plate 2 is mounted by press working or the like, while Electrodes (not shown) called metallization layers are formed on both the front and back surfaces by baking molybdenum or the like.

An external lead terminal (hereinafter referred to as a lead terminal) 6 made of nickel or the like is formed in a strip shape on one end surface of the primary heat sink 3.
One end of the lead terminal 6 is attached in advance by welding or the like, and the lead terminal 6 is connected to the semiconductor chip 4 side, that is, by being welded to an external terminal 7 provided separately after being bent toward the upper side. . Although not shown, a plating layer made of nickel, tin, solder, or the like may be formed in advance on the soldering surface of each component described above, or wire bonding to the electrode of the semiconductor chip 4 may be performed. It goes without saying that the outer shape of the insulating plate 2 in plan view is not limited to the rectangular shape.

[0004]

By the way, in order to construct such a semiconductor device, a solder plate 8 having a predetermined thickness is interposed between the soldering surfaces of the respective parts and they are heated. Soldering is done by
If vibration or the like is applied during the soldering heating, as shown in the plan view of FIG.
The secondary heat sink 3 may be displaced, and the primary heat sink 3 may be soldered to the insulating plate 2 while the primary heat sink 3 is still displaced. Then, in this case, the lead terminal 6 bent to be connected to the external terminal 7 and the external terminal 7 are misaligned with each other, resulting in an unstable connection state between them. However, in the extreme case, the inconvenience that the connection would be impossible would occur.

The present invention was devised in view of such inconvenience, and even if vibration or the like is applied at the time of soldering heating, the respective parts superposed on each other do not cause a positional deviation, which is excellent. An object of the present invention is to provide a semiconductor device having a structure capable of ensuring a connected state.

[0006]

According to the present invention, in order to achieve such an object, a semiconductor chip, a primary heat sink to which lead terminals are attached, an insulating plate, and a secondary heat sink are sequentially stacked. In the semiconductor device, the positioning protrusions for insulating plate for positioning and supporting the insulating plate and the positioning protrusions for lead terminal for positioning and supporting the lead terminal are provided on the surface of the secondary heat sink. It is characterized by that.

[0007]

According to the above construction, the insulating plate stacked on the surface of the secondary heat sink is positioned and supported by the positioning projections for the insulating plate, while the primary heat sink stacked on this insulating plate is The lead terminals are positioned and supported by the lead terminal positioning protrusions via the lead terminals attached thereto.

[0008]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view showing a schematic structure of a semiconductor device according to this embodiment, and FIG. 2 is a perspective view showing a modification thereof. Since the overall structure of these semiconductor devices is basically the same as that of the conventional example, parts and portions which are the same as or equivalent to those in FIGS. 3 and 4 are denoted by the same reference numerals in FIGS. Detailed explanation is omitted.

This semiconductor device is a hybrid IC or the like, and on the surface of the secondary heat sink 1, the insulating plate 2, the primary heat sink 3 to which the lead terminals 6 are attached, and the semiconductor chip 4 are sequentially stacked. , Each of which is soldered to each other. Then, at a predetermined position of the secondary heat sink 1, an insulating plate positioning protrusion 5 for contacting with the outer peripheral end surface of the insulating plate 2 to surround and support the insulating plate 2 is provided and is attached to the primary heat sink 3. Abutting on both end surfaces of the lead terminal 6,
Pair of lead terminal positioning projections 1 for positioning and supporting
0 is provided. Therefore, the primary heat sink 3 placed on the insulating plate 2 is positioned and supported through the lead terminals 6 by positioning and supporting the lead terminals 6 by the lead terminal positioning protrusions 10. . The protrusions 5 and 10 are usually integrally formed by pressing the secondary heat sink 1 or the like, but may be attached by a method other than this.

By the way, as another structure for positioning and supporting the lead terminal 6, it is also possible to adopt a structure as shown in a modification of FIG. That is, in this semiconductor device, a single lead terminal positioning protrusion 10 is provided at a predetermined position corresponding to the lead terminal 6 on the surface of the secondary heat sink 1, while the lead terminal 6 attached to the primary heat sink 3 is provided. A through hole 11 through which the protrusion 10 is inserted is formed at a predetermined position corresponding to the protrusion 10. Therefore, as a result of the lead terminal 6 being positioned and supported by the lead terminal positioning protrusion 10, the primary heat sink 3 is positioned and supported via the lead terminal 6. In the semiconductor device shown in FIG. 2, parts and portions which are the same as or correspond to those in FIG. 1 are designated by the same reference numerals.

Therefore, in the semiconductor device shown in FIGS. 1 and 2, the insulating plate 2 stacked on the secondary heat sink 1 is positioned and supported by the insulating plate positioning protrusions 5, while the primary heat sink 3 is used. Is also positioned and supported via the lead terminal positioning protrusion 10. Here, it goes without saying that the applicable range of the present invention is not limited to the hybrid IC, and the present invention can be applied to other types of semiconductor devices.

[0013]

As described above, according to the semiconductor device of the present invention, the insulating plate positioning protrusion for positioning and supporting the insulating plate and the lead attached to the primary heat sink are provided on the surface of the secondary heat sink. Since the positioning protrusions for the lead terminals for positioning and supporting the terminals are provided, the insulating plate is positioned and supported by the positioning protrusions for the insulating plate, and the primary heat sink stacked on the insulating plate is mounted on the insulating plate. The lead terminals are positioned and supported by the lead terminal positioning protrusions via the attached lead terminals. Therefore, even if vibration or the like is applied at the time of soldering heating for connecting the respective parts stacked on each other, the respective parts, in particular, the heat sink to which the lead terminal for external extraction is attached does not cause a positional deviation, which is excellent. The effect that the connection state can be secured can be obtained.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a schematic structure of a semiconductor device according to an embodiment.

FIG. 2 is a perspective view showing a modified example thereof.

FIG. 3 is a perspective view showing a schematic structure of a semiconductor device according to a conventional example.

FIG. 4 is a plan view for explaining an inconvenience in a conventional example.

[Explanation of symbols]

 1 Secondary Heat Sink 2 Insulation Plate 3 Primary Heat Sink 4 Semiconductor Chip 5 Insulation Plate Positioning Protrusion 6 Lead Terminal (External Lead Lead Terminal) 10 Lead Terminal Positioning Protrusion

Claims (1)

(57) [Claims] 1. A semiconductor chip, a primary heat sink to which external lead terminals are attached, an insulating plate, and 2
A semiconductor device in which a secondary heat sink is sequentially stacked, and an insulating plate positioning protrusion for positioning and supporting the insulating plate is provided on the surface of the secondary heat sink, and the external lead terminal is positioned and supported. A semiconductor device, which is provided with a positioning protrusion for a lead terminal.