JP2683318B2 - Method for forming field oxide film of semiconductor device - Google Patents
Method for forming field oxide film of semiconductor deviceInfo
- Publication number
- JP2683318B2 JP2683318B2 JP6061512A JP6151294A JP2683318B2 JP 2683318 B2 JP2683318 B2 JP 2683318B2 JP 6061512 A JP6061512 A JP 6061512A JP 6151294 A JP6151294 A JP 6151294A JP 2683318 B2 JP2683318 B2 JP 2683318B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- oxide film
- field oxide
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子の製造工程の
素子分離膜形成に関し、特に活性領域を広く確保し、フ
ィールド酸化膜表面を滑らかに形成できる半導体素子の
フィールド酸化膜形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation film formation in a semiconductor device manufacturing process, and more particularly to a method for forming a field oxide film of a semiconductor device which can secure a wide active region and form a smooth field oxide film surface.
【０００２】[0002]
【従来の技術】従来のフィールド酸化膜形成方法は、図
１７に示したように、シリコン基板１にパッド酸化膜
２、窒化膜４を順次蒸着した後に上記窒化膜４を選択的
に蝕刻してフィールド酸化膜を形成しようとする部分を
開放させた後、さらに窒化膜を蒸着し、エッチバック(e
tch back)してスペーサ窒化膜６を形成した後、上記窒
化膜４とスペーサ窒化膜を蝕刻マスクとしてシリコン基
板１にトレンチ７を形成する。2. Description of the Related Art In a conventional field oxide film forming method, as shown in FIG. 17, a pad oxide film 2 and a nitride film 4 are sequentially deposited on a silicon substrate 1 and then the nitride film 4 is selectively etched. After opening the part where the field oxide film is to be formed, a nitride film is further deposited and an etchback (e
After tch back) to form the spacer nitride film 6, a trench 7 is formed in the silicon substrate 1 using the nitride film 4 and the spacer nitride film as an etching mask.
【０００３】図１８には図１７の構造で酸化工程を行っ
たときに形成されるフィールド酸化膜１０が示されてお
り、また、パッド酸化膜２を通じて酸素が拡散され、シ
リコン基板１の一部分も同時に酸化されてフィールド酸
化膜の耳Ｃが生じ、さらに活性領域に嘴状部分(bird's
beak)Ｄが厚く形成されるのを示している。FIG. 18 shows a field oxide film 10 formed when the oxidation process is performed in the structure of FIG. 17, oxygen is diffused through the pad oxide film 2, and a part of the silicon substrate 1 is also shown. At the same time, the ear C of the field oxide film is generated by being oxidized, and the beak-shaped portion (bird's
It is shown that the beak) D is formed thick.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述の
ようにすると、フィールド酸化膜に形成される耳と嘴状
部分は活性領域の面積を減少させるのみならず、フィー
ルド酸化膜表面が荒くなって後続工程に困難を生じると
いう問題点があった。上記した問題点を解決するため、
本発明は嘴状部分の発生要因を減少させ、活性領域をよ
り広いものにし、フィールド酸化膜の表面を滑らかに成
形して後続工程を円滑に行えるようにして、優れた素子
分離特性を有する高度集積半導体素子のフィールド酸化
膜形成方法を提供することを目的とする。However, in the above-described manner, the ears and beaks formed in the field oxide film not only reduce the area of the active region, but also the surface of the field oxide film becomes rough and the subsequent surface is roughened. There is a problem that the process is difficult. In order to solve the above problems,
The present invention reduces the cause of the beak-like portion, widens the active region, and smoothly molds the surface of the field oxide film so that the subsequent process can be performed smoothly. An object is to provide a method for forming a field oxide film of an integrated semiconductor device.
【０００５】[0005]
【課題を解決するための手段】上記した目的を達成する
ため、本発明にかかる第１の半導体素子のフィールド酸
化膜形成方法は、半導体基板にパッド酸化膜を形成する
工程；前記パッド酸化膜を熱処理(annealing)して第１
の酸化窒化膜を形成する工程；前記第１の酸化窒化膜上
にポリシリコン膜、第１の窒化膜を順次形成する工程；
前記第１の窒化膜、ポリシリコン膜の所定の部位を順次
蝕刻した後、第２の窒化膜を蒸着する工程；前記第２の
窒化膜をエッチバックしてスペーサ窒化膜を形成し、露
出した第１の酸化窒化膜、半導体基板を順次蝕刻してト
レンチを形成する工程；トレンチ底部とトレンチ側壁を
熱処理(annealing)して第２の酸化窒化膜を形成する工
程；及び、前記トレンチ底部に形成された第２の酸化窒
化膜を蝕刻して除去し、フィールド酸化膜を形成する工
程からなることを特徴とする。In order to achieve the above-mentioned object, a first method for forming a field oxide film of a semiconductor device according to the present invention comprises a step of forming a pad oxide film on a semiconductor substrate; 1st after annealing
A step of forming an oxynitride film of the above; a step of sequentially forming a polysilicon film and a first nitride film on the first oxynitride film;
A step of sequentially etching a predetermined portion of the first nitride film and the polysilicon film and then depositing a second nitride film; etching back the second nitride film to form a spacer nitride film and exposing the spacer nitride film. Forming a trench by sequentially etching the first oxynitride film and the semiconductor substrate; forming a second oxynitride film by annealing the trench bottom and trench sidewalls; and forming the trench bottom It is characterized by comprising the step of etching and removing the formed second oxynitride film to form a field oxide film.
【０００６】 また、本発明に係る第２の半導体素子の
フィールド酸化膜形成方法は、半導体基板上にパッド酸
化膜、ポリシリコン膜、第１の窒化膜を順次形成する工
程；前記第１の窒化膜、ポリシリコン膜の所定の部位を
順次蝕刻した後、第２の窒化膜を蒸着する工程；前記第
２の窒化膜をエッチバックしてスペーサ窒化膜を形成す
るとともに、このエッチバックにより露出したパッド酸
化膜、半導体基板を順次蝕刻してトレンチを形成する工
程；前記トレンチ底部と同トレンチ側壁を熱処理（ａｎ
ｎｅａｌｉｎｇ）して酸化窒化膜を形成する工程；およ
び、前記トレンチ底部に形成した酸化窒化膜を蝕刻して
除去し、フィールド酸化膜を形成する工程からなること
を特徴とする。A second method for forming a field oxide film of a semiconductor device according to the present invention includes a step of sequentially forming a pad oxide film, a polysilicon film, and a first nitride film on a semiconductor substrate; the first nitride film. film, after sequentially etching the predetermined portion of the polysilicon film, a step of depositing a second nitride layer; said second nitride film is etched back to form a spacer nitride film
And the pad acid exposed by this etch back
Forming a trench by sequentially etching the oxide film and the semiconductor substrate; heat-treating the trench bottom and the trench sidewall (an
and a step of forming a field oxide film by etching and removing the oxynitride film formed on the bottom of the trench.
【０００７】[0007]
【発明の作用・効果】上記のように構成された本発明の
方法によるフィールド酸化膜は非等方性酸化を誘発して
側壁ポリシリコンの酸化を大幅に減少させることができ
る。したがって、嘴状部分の長さが減少し、活性領域を
より広く確保し、フィールド酸化膜の表面を滑らかに形
成することができる。また、電気的にフィールドの臨界
電圧（threshold voltage）が高められたフィールド酸
化膜を形成することができるので、パンチスルー特性が
優れた高度集積素子を製造することができる。The field oxide film according to the method of the present invention constructed as described above can induce anisotropic oxidation to significantly reduce the oxidation of the sidewall polysilicon. Therefore, the length of the beak-shaped portion is reduced, the active region can be secured wider, and the surface of the field oxide film can be formed smoothly. In addition, since a field oxide film having an electrically increased threshold voltage can be formed, a highly integrated device having excellent punch-through characteristics can be manufactured.
【０００８】[0008]
実施例１ 以下、図１〜図９を参照して本発明の第１実施例を詳述
する。First Embodiment Hereinafter, a first embodiment of the present invention will be described in detail with reference to FIGS.
【０００９】図１に示したように、シリコン基板１にパ
ッド酸化膜２を５０〜２００オングストロームの厚さに
形成した後、図２に示したようにパッド酸化膜２をアン
モニア（ＮＨ2）またはＮ2Ｏガス雰囲気下で所定の温度
にて熱処理して酸化窒化膜５（請求項１記載の第１の酸
化窒化膜）を５０〜１００オングストロームの厚さに成
長させる。As shown in FIG. 1, after the pad oxide film 2 is formed on the silicon substrate 1 to a thickness of 50 to 200 angstroms, the pad oxide film 2 is replaced with ammonia (NH 2 ) or as shown in FIG. Heat treatment is performed at a predetermined temperature in an N 2 O gas atmosphere to grow the oxynitride film 5 (the first oxynitride film according to claim 1) to a thickness of 50 to 100 Å.
【００１０】次いで、図３に示したように、ポリシリコ
ン膜３を２００〜５００オングストローム、窒化膜４
（請求項１記載の第１の窒化膜）を１５００〜３０００
オングストロームの厚さで酸化窒化膜５上に順次形成し
た後、図４に示したように、所定の大きさで上記窒化膜
４、ポリシリコン膜３を順次乾式蝕刻してフィールド酸
化膜を形成しようとする領域を開放させた後、さらに窒
化膜４’（請求項１記載の第２の窒化膜）を１５００〜
２０００オングストロームの厚さに形成する。Next, as shown in FIG. 3, the polysilicon film 3 is formed to a thickness of 200 to 500 angstroms and a nitride film 4 is formed.
(First nitride film according to claim 1) is set to 1500-3000.
After sequentially forming an angstrom thickness on the oxynitride film 5, as shown in FIG. 4, the nitride film 4 and the polysilicon film 3 are sequentially dry-etched to form a field oxide film. After the region to be defined as is opened, the nitride film 4 ′ (second nitride film according to claim 1) is further added to 1500 to
It is formed to a thickness of 2000 angstrom.
【００１１】次いで、図５に示したように、上記窒化膜
４をエッチバックしてスペーサ窒化膜６を形成し、酸化
窒化膜５、シリコン基板１を順次乾式蝕刻して５００〜
１０００オングストロームの深さのトレンチ７を形成し
た後、図６に示したように、トレンチ底部８とトレンチ
側壁８’をＮ2Ｏガス雰囲気下で熱処理して酸化窒化膜
９（請求項１記載の第２の酸化窒化膜）を５０〜１００
オングストロームの厚さに成長させ、図７に示したよう
に、上記トレンチ底部８の酸化窒化膜９を乾式蝕刻して
除去する。Next, as shown in FIG. 5, the nitride film 4 is etched back to form a spacer nitride film 6, and the oxynitride film 5 and the silicon substrate 1 are sequentially dry-etched to 500 to 500 nm.
After forming the trench 7 having a depth of 1000 angstrom, as shown in FIG. 6, the trench bottom portion 8 and the trench side wall 8 ′ are heat-treated in an N 2 O gas atmosphere to form the oxynitride film 9 (claim 1). Second oxynitride film) 50-100
After growing to a thickness of angstrom, as shown in FIG. 7, the oxynitride film 9 on the trench bottom 8 is removed by dry etching.
【００１２】最後に、図８に示したように、フィールド
酸化膜１０を形成した後、図９に示したように、残留し
ている上記窒化膜４、スペーサ窒化膜６、ポリシリコン
膜３、酸化窒化膜５を除去し、フィールド酸化膜１０上
部の所定の部位を除去して平坦化させる。Finally, as shown in FIG. 8, after forming the field oxide film 10, as shown in FIG. 9, the remaining nitride film 4, spacer nitride film 6, polysilicon film 3, The oxynitride film 5 is removed, and a predetermined portion above the field oxide film 10 is removed to be planarized.
【００１３】実施例２ 以下、図１０〜図１６を参照して本発明に係る第２実施
例を詳述する。Second Embodiment Hereinafter, a second embodiment according to the present invention will be described in detail with reference to FIGS.
【００１４】図１０に示したように、シリコン基板１に
パッド酸化膜２を５０〜２００オングストロームの厚さ
に形成した後、ポリシリコン膜３を２００〜５００オン
グストロームの厚さに、窒化膜４（請求項５の第１の窒
化膜）を１５００〜３０００オングストロームの厚さに
それぞれ形成した後、図１１に示したように、所定の大
きさで窒化膜４、ポリシリコン膜３を順次乾式蝕刻して
フィールド酸化膜を形成しようとする領域を開放させた
後、全体構造の上部に窒化膜４’（請求項５の第２の窒
化膜）を１５００〜２０００オングストロームの厚さに
形成する。As shown in FIG. 10, after the pad oxide film 2 is formed on the silicon substrate 1 to a thickness of 50 to 200 angstroms, the polysilicon film 3 is formed to a thickness of 200 to 500 angstroms and the nitride film 4 ( The first step of claim 5
Then , as shown in FIG. 11, the nitride film 4 and the polysilicon film 3 are sequentially dry-etched in order to form a field oxide film. After the region to be defined as is opened, the nitride film 4 ′ is formed on the upper portion of the entire structure ( the second nitride film of claim 5).
Film ) to a thickness of 1500-2000 angstroms.
【００１５】次いで、図１２に示したように、窒化膜
４’をエッチバックしてスペーサ窒化膜６を形成した
後、窒化膜４’とスペーサ窒化膜６を蝕刻マスクとして
パッド酸化膜２とシリコン基板１を順次乾式蝕刻して５
００〜１０００オングストロームの深さのトレンチ７を
形成する。[0015] Then, as shown in FIG. 12, 'after forming the spacer nitride film 6 is etched back, the nitride film 4' nitride film 4 pad oxide film 2 and silicon and a spacer nitride film 6 as an etching mask Substrate 1 is sequentially dry etched 5
A trench 7 having a depth of 00 to 1000 angstrom is formed.
【００１６】次いで、図１３に示したように、トレンチ
底部８とトレンチ側壁８’をＮ２Ｏガス雰囲気下で熱処
理して酸化窒化膜９（請求項５の酸化窒化膜）を５０〜
１００オングストロームの厚さに成長させた後、図１４
に示したように、トレンチ底部８の酸化窒化膜９を蝕刻
して除去し、図１５に示したようにフィールド酸化膜１
０を形成する。Then, as shown in FIG. 13, the trench bottom portion 8 and the trench side wall 8'are heat-treated in an N 2 O gas atmosphere to form an oxynitride film 9 (oxynitride film of claim 5 ) in an amount of 50 to 50.
After growing to a thickness of 100 Å, FIG.
As shown in FIG. 15, the oxynitride film 9 on the bottom 8 of the trench is etched and removed, and the field oxide film 1 is removed as shown in FIG.
Form 0.
【００１７】最後に、図１６に示したように、窒化膜
４、スペーサ窒化膜６、ポリシリコン膜３、パッド酸化
膜２を除去し、フィールド酸化膜１０上部の所定部位を
除去して平坦化させる。Finally, as shown in FIG. 16, the nitride film 4, the spacer nitride film 6, the polysilicon film 3 and the pad oxide film 2 are removed, and a predetermined portion above the field oxide film 10 is removed to be planarized. Let
【００１８】上記のように構成された本発明の方法によ
るフィールド酸化膜は非等方性酸化を誘発して側壁ポリ
シリコンの酸化を大幅に減少させることができる。した
がって、嘴状部分の長さが減少し、活性領域をより広く
確保し、フィールド酸化膜の表面を滑らかに形成するこ
とができる。また、電気的にフィールドの臨界電圧（th
reshold voltage）を高められたフィールド酸化膜を形
成することができるので、パンチスルー特性が優れた高
度集積素子を製造することができる。The field oxide according to the method of the present invention constructed as described above can induce anisotropic oxidation to significantly reduce the oxidation of the sidewall polysilicon. Therefore, the length of the beak-shaped portion is reduced, the active region can be secured wider, and the surface of the field oxide film can be formed smoothly. Also, the electrical field critical voltage (th
Since it is possible to form a field oxide film having an increased reshold voltage, it is possible to manufacture a highly integrated device having excellent punch-through characteristics.
【図１】本発明の第１実施例によるフィールド酸化膜形
成の第１工程を示す断面図。FIG. 1 is a sectional view showing a first step of forming a field oxide film according to a first embodiment of the present invention.
【図２】本発明の第１実施例によるフィールド酸化膜形
成の第２工程を示す断面図。FIG. 2 is a sectional view showing a second step of forming a field oxide film according to the first embodiment of the present invention.
【図３】本発明の第１実施例によるフィールド酸化膜形
成の第３工程を示す断面図。FIG. 3 is a sectional view showing a third step of forming a field oxide film according to the first embodiment of the present invention.
【図４】本発明の第１実施例によるフィールド酸化膜形
成の第４工程を示す断面図。FIG. 4 is a sectional view showing a fourth step of forming a field oxide film according to the first embodiment of the present invention.
【図５】本発明の第１実施例によるフィールド酸化膜形
成の第５工程を示す断面図。FIG. 5 is a sectional view showing a fifth step of forming a field oxide film according to the first embodiment of the present invention.
【図６】本発明の第１実施例によるフィールド酸化膜形
成の第６工程を示す断面図。FIG. 6 is a sectional view showing a sixth step of forming a field oxide film according to the first embodiment of the present invention.
【図７】本発明の第１実施例によるフィールド酸化膜形
成の第７工程を示す断面図。FIG. 7 is a sectional view showing a seventh step of forming a field oxide film according to the first embodiment of the present invention.
【図８】本発明の第１実施例によるフィールド酸化膜形
成の第８工程を示す断面図。FIG. 8 is a sectional view showing an eighth step of forming a field oxide film according to the first embodiment of the present invention.
【図９】本発明の第１実施例によるフィールド酸化膜形
成の第９工程を示す断面図。FIG. 9 is a sectional view showing a ninth step of forming a field oxide film according to the first embodiment of the present invention.
【図１０】本発明の第２実施例によるフィールド酸化膜
形成の第１工程を示す断面図。FIG. 10 is a sectional view showing a first step of forming a field oxide film according to the second embodiment of the present invention.
【図１１】本発明の第２実施例によるフィールド酸化膜
形成の第２工程を示す断面図。FIG. 11 is a sectional view showing a second step of forming a field oxide film according to the second embodiment of the present invention.
【図１２】本発明の第２実施例によるフィールド酸化膜
形成の第３工程を示す断面図。FIG. 12 is a sectional view showing a third step of forming a field oxide film according to the second embodiment of the present invention.
【図１３】本発明の第２実施例によるフィールド酸化膜
形成の第４工程を示す断面図。FIG. 13 is a sectional view showing a fourth step of forming a field oxide film according to the second embodiment of the present invention.
【図１４】本発明の第２実施例によるフィールド酸化膜
形成の第５工程を示す断面図。FIG. 14 is a sectional view showing a fifth step of forming a field oxide film according to the second embodiment of the present invention.
【図１５】本発明の第２実施例によるフィールド酸化膜
形成の第６工程を示す断面図。FIG. 15 is a sectional view showing a sixth step of forming a field oxide film according to the second embodiment of the present invention.
【図１６】本発明の第２実施例によるフィールド酸化膜
形成の第７工程を示す断面図。FIG. 16 is a sectional view showing a seventh step of forming a field oxide film according to the second embodiment of the present invention.
【図１７】従来のフィールド酸化膜形成工程を示す断面
図。FIG. 17 is a sectional view showing a conventional field oxide film forming step.
【図１８】図１７の工程を用いて形成したフィールド酸
化膜の形態を示す断面図。FIG. 18 is a cross-sectional view showing the form of a field oxide film formed by using the process of FIG.
１…シリコン基板、２…パッド酸化膜、３…ポリシリコ
ン膜、４…窒化膜、４’…窒化膜、５…酸化窒化膜、６
…スペーサ窒化膜、７…トレンチ、８…トレンチ底部、
８’…トレンチ側壁、９…酸化窒化膜、１０…フィール
ド酸化膜。1 ... Silicon substrate, 2 ... Pad oxide film, 3 ... Polysilicon film, 4 ... Nitride film, 4 '... Nitride film, 5 ... Oxynitride film, 6
... spacer nitride film, 7 ... trench, 8 ... trench bottom,
8 '... trench side wall, 9 ... oxynitride film, 10 ... field oxide film.
Claims (8)
において、 半導体基板にパッド酸化膜を形成する工程、 前記パッド酸化膜を熱処理して第１の酸化窒化膜を形成
する工程、 前記第１の酸化窒化膜上にポリシリコン膜、第１の窒化
膜を順次形成する工程、 前記第１の窒化膜、ポリシリコン膜の所定部位を順次蝕
刻した後、第２の窒化膜を蒸着する工程、 前記第２の窒化膜をエッチバックしてスペーサ窒化膜を
形成し、露出した第１の酸化窒化膜、半導体基板を順次
蝕刻してトレンチを形成する工程、 前記トレンチ底部と同トレンチ側壁を熱処理して第２の
酸化窒化膜を形成する工程及び、 前記トレンチ底部に形成した第２の酸化窒化膜を蝕刻し
て除去し、フィールド酸化膜を形成する工程からなるこ
とを特徴とする半導体素子のフィールド酸化膜形成方
法。1. A field oxide film formation method of a semiconductor device, the step of forming a pad oxide film on a semiconductor substrate, forming a first oxynitride layer by heat-treating the pad oxide layer, the first oxide A step of sequentially forming a polysilicon film and a first nitride film on the nitride film, a step of sequentially etching a predetermined portion of the first nitride film and the polysilicon film, and a step of depositing a second nitride film, A step of etching back the second nitride film to form a spacer nitride film and sequentially etching the exposed first oxynitride film and the semiconductor substrate to form a trench; and heat treating the trench bottom and the trench sidewall to form a trench. And a step of forming a field oxide film by etching and removing the second oxynitride film formed on the bottom of the trench. Field oxide film forming method.
化膜の厚さが、５０〜２００オングストロームであるこ
とを特徴とする請求項１に記載の半導体素子のフィール
ド酸化膜形成方法。2. The method for forming a field oxide film of a semiconductor device according to claim 1, wherein the pad oxide film formed on the semiconductor substrate has a thickness of 50 to 200 angstroms.
化膜を５０〜１００オングストロームの厚さに、アンモ
ニア（ＮＨ３）またはＮ２Ｏガス雰囲気下で、形成する
ことを特徴とする請求項１に記載の半導体素子のフィー
ルド酸化膜形成方法。3. The first oxynitride film and the second oxynitride film are formed to a thickness of 50 to 100 angstroms in an atmosphere of ammonia (NH 3 ) or N 2 O gas. The method for forming a field oxide film of a semiconductor device according to claim 1.
オングストロームに形成することを特徴とする請求項１
に記載の半導体素子のフィールド酸化膜形成方法。4. The depth of the trench is 500 to 1000.
2. Forming in Angstrom.
A method for forming a field oxide film of a semiconductor device as described in 1.
において、 半導体基板上にパッド酸化膜、ポリシリコン膜、第１の
窒化膜を順次形成する工程、 前記第１の窒化膜、ポリシリコン膜の所定の部位を順次
蝕刻した後、第２の窒化膜を蒸着する工程前記第２の窒
化膜をエッチバックしてスペーサ窒化膜を形成するとと
もに、このエッチバックにより露出したパッド酸化膜、
半導体基板を順次蝕刻してトレンチを形成する工程、 前記トレンチ底部と同トレンチ側壁を熱処理して酸化窒
化膜を形成する工程、 および、前記トレンチ底部に形成した酸化窒化膜を蝕刻
して除去し、フィールド酸化膜を形成する工程からなる
ことを特徴とする半導体素子のフィールド酸化膜形成方
法。5. A method of forming a field oxide film of a semiconductor device, comprising the steps of sequentially forming a pad oxide film, a polysilicon film, and a first nitride film on a semiconductor substrate, and a predetermined process of forming the first nitride film and the polysilicon film. After sequentially etching the above-mentioned region, a step of depositing a second nitride film is performed. The second nitride film is etched back to form a spacer nitride film.
In fact, the pad oxide film exposed by this etch back ,
A step of sequentially etching the semiconductor substrate to form a trench, a step of heat-treating the trench bottom and the same trench sidewall to form an oxynitride film, and an etching removal of the oxynitride film formed on the trench bottom, A method for forming a field oxide film of a semiconductor device, comprising the step of forming a field oxide film.
膜が、５０〜２００オングストロームの厚さであること
を特徴とする請求項５に記載の半導体素子のフィールド
酸化膜形成方法。6. The method for forming a field oxide film of a semiconductor device according to claim 5, wherein the pad oxide film formed on the semiconductor substrate has a thickness of 50 to 200 angstroms.
深さが、５００〜１０００オングストロームであること
を特徴とする請求項５に記載の半導体素子のフィールド
酸化膜形成方法。7. The method for forming a field oxide film of a semiconductor device according to claim 5, wherein the depth of the trench formed in the semiconductor substrate is 500 to 1000 angstrom.
トロームの厚さに、アンモニア（ＮＨ３）またはＮ２Ｏ
ガス雰囲気下で、形成することを特徴とする請求項５に
記載の半導体素子のフィールド酸化膜形成方法。8. The oxynitride film is formed to a thickness of 50 to 100 angstroms with ammonia (NH 3 ) or N 2 O.
The method for forming a field oxide film of a semiconductor device according to claim 5, wherein the method is performed in a gas atmosphere.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1993-5468 | 1993-03-31 | ||
| KR1019930005468A KR960005553B1 (en) | 1993-03-31 | 1993-03-31 | Manufacturing method of field oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06302685A JPH06302685A (en) | 1994-10-28 |
| JP2683318B2 true JP2683318B2 (en) | 1997-11-26 |
Family
ID=19353368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6061512A Expired - Fee Related JP2683318B2 (en) | 1993-03-31 | 1994-03-30 | Method for forming field oxide film of semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5399520A (en) |
| JP (1) | JP2683318B2 (en) |
| KR (1) | KR960005553B1 (en) |
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| KR100197651B1 (en) * | 1995-11-03 | 1999-06-15 | 김영환 | Method of forming an element isolation film of semiconductor device |
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-
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-
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- 1994-03-30 US US08/220,098 patent/US5399520A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR960005553B1 (en) | 1996-04-26 |
| JPH06302685A (en) | 1994-10-28 |
| KR940022791A (en) | 1994-10-21 |
| US5399520A (en) | 1995-03-21 |
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