JP2680696B2 - 半導体素子の配線方法 - Google Patents

半導体素子の配線方法

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Publication number
JP2680696B2
JP2680696B2 JP1236254A JP23625489A JP2680696B2 JP 2680696 B2 JP2680696 B2 JP 2680696B2 JP 1236254 A JP1236254 A JP 1236254A JP 23625489 A JP23625489 A JP 23625489A JP 2680696 B2 JP2680696 B2 JP 2680696B2
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Japan
Prior art keywords
wire
semiconductor element
electrode
insulating coating
wire bond
Prior art date
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Expired - Lifetime
Application number
JP1236254A
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English (en)
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JPH0399446A (ja
Inventor
修治 片山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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Application filed by Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tottori Sanyo Electric Co Ltd
Priority to JP1236254A priority Critical patent/JP2680696B2/ja
Publication of JPH0399446A publication Critical patent/JPH0399446A/ja
Application granted granted Critical
Publication of JP2680696B2 publication Critical patent/JP2680696B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02123—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body inside the bonding area
    • H01L2224/02125—Reinforcing structures
    • H01L2224/02126—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 （イ）産業上の利用分野 本発明は絶縁被膜を有する半導体素子にワイヤボンド
法を適用した半導体の配線方法に関する。
（ロ）従来の技術 従来より、例えばアルミニウムを含む発光ダイオード
などは特開昭57−111073号公報の如く、素子表面が露出
したままであると素子の発光特性が劣化してくるので、
素子表面に絶縁被膜を設けていた。この場合電極部分を
含む半導体素子表面に絶縁被膜を設け、その後電極部分
の絶縁被膜をホトリソグラフィ法などを用いて除去し、
露出した電極部分にワイヤボンド法で配線を施してい
た。
（ハ）発明が解決しようとする課題 ところが、上述の発光ダイオードなどの半導体素子は
エピタキシャル成長過程などでウエハが反ったり表面に
凹凸が生じたりするため、電極形成のパターニングと、
絶縁被膜除去のパターニングで位置ずれが生じ、素子表
面が露出することがあり、このような半導体素子は劣化
を生じやすいので不都合であった。
（ニ）課題を解決するための手段 本発明は上述の欠点を改めるためになされたもので、
絶縁被膜の上から電極に対してワイヤボンドを行い、ワ
イヤボンド衝撃により絶縁被膜を剥離させ、その剥離部
分において電極に配線を施すものである。
（ホ）作用 これにより絶縁被膜をパターニング除去する必要がな
く、また剥離はワイヤボンド線の先端の大きさに略等し
いから、半導体素子の表面が露出することはない。
（ヘ）実施例 以下半導体素子としてGaAlAs発光ダイオードを例にし
て詳細に説明する。この半導体素子は一辺200〜400μｍ
の略サイコロ状またはその表面側をメサエッチされた形
状若しくはベベル型をなしており、第１図に示すよう
に、例えば円形で直径が150μｍ、厚み２μｍで、Au,G
e,Niを主材とする電極（２）が設けられ、その電極
（２）の上を含む素子（１）の表面には、厚さ0.5〜10
μｍの窒化硅素（Si3N4またはアモルファスSixN）から
成る絶縁被膜（３）が設けてある。この絶縁被膜（３）
は、ウエハの段階、若しくは素子にペレッタライズされ
た後で形成され、電極（２）に対応する部分の除去は行
われていない。
このような半導体素子（１）に対して、電極（２）の
上方からボールボンドワイヤボンド法によりワイヤボン
ドをする。例えば直径25μｍの金線を用い、水素トーチ
によりおよそ120μｍのボールをワイヤボンド線（４）
の先端に形成しワイヤボンドをする。これにより第１回
のワイヤボンドでワイヤボンド線により衝撃を受けた絶
縁被膜（３）は、第２図に示す如くその衝撃部分のみ剥
離される。剥離された絶縁被膜（３）はボールの先端に
付着する場合が多いが、待機位置において水素トーチを
当てておけばワイヤボンド線の先端から容易に除去され
る。そしてその状態で再びワイヤボンドすると、第３図
の如く、絶縁被膜（３）が剥離したことによって露出し
た電極（２）に対して第１ボンドが達成できるので、そ
のまま第２ボンドを行えば配線を行うことができる。
上述の説明で、一回だけで絶縁被膜（３）が剥離しな
いこともある。しかし絶縁被膜（３）が剥離したか否か
は絶縁被膜（３）の光反射係数の大きさによりパターン
認識できるから何回でも繰り返しワイヤボンドをすれば
よい。
また絶縁被膜（３）の剥離がワイヤボンド線（４）の
ボールの大きさになるかどうか、及びそのワイヤボンド
位置が電極（２）の中心に限定できるのかということに
関しては、半導体素子表面が露出するかしないかに直接
影響を及ぼすことなので慎重に検討した。その結果、ボ
ンディング衝撃が局所的であれば有るほど、絶縁被膜
（３）の剥離の大きさは小さく、従ってこの点ではボー
ルボンド法以外の方法がより効果を期待できることとな
り、また電極の位置そのものは絶縁被膜（３）があるた
めにパターン認識しにくいものの、半導体素子の外形に
対して電極（２）の位置を特定する作業は比較的容易で
あることが分かった。
さらに剥離した絶縁被膜が配線のときに電極（２）と
ワイヤボンド線（４）の間に介在し、導通不良を生じな
いかについて検討した。上述の如くワイヤボンド（空打
ち）の度に水素トーチを当てることによって絶縁被膜は
蒸発したりワイヤボンド線に溶け込んだり、あるいはボ
ールが大きくなり過ぎて落下し次の新しいボールとなっ
たりして実際上導通不良を起こすことはなかったが、他
の方法として、絶縁被膜（３）の上からワイヤボンド
（空打ち）する度に、予め定められたワイヤボンド線
（４）と密着のよい場所にワイヤボンドして先端を切り
離すという方法も有効であった。
（ト）発明の効果 以上のような方法で配線を行った発光ダイオード半導
体素子について高温高湿連続通電動作を行ったところ、
1000時間で光出力が80.0％未満となる素子は全く見られ
なかった。
【図面の簡単な説明】
第１図乃至第３図は本発明実施例を説明する配線方法の
工程説明図である。 （１）……半導体素子、（２）……電極、 （３）……絶縁被膜、（４）……ワイヤボンド線

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】電極表面を含む素子の表面に絶縁被膜を有
    する半導体素子の電極上方にワイヤボンド線を複数回ワ
    イヤボンドして半導体素子に配線を施す半導体素子の配
    線方法。
JP1236254A 1989-09-12 1989-09-12 半導体素子の配線方法 Expired - Lifetime JP2680696B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1236254A JP2680696B2 (ja) 1989-09-12 1989-09-12 半導体素子の配線方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1236254A JP2680696B2 (ja) 1989-09-12 1989-09-12 半導体素子の配線方法

Publications (2)

Publication Number Publication Date
JPH0399446A JPH0399446A (ja) 1991-04-24
JP2680696B2 true JP2680696B2 (ja) 1997-11-19

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ID=16998061

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Country Status (1)

Country Link
JP (1) JP2680696B2 (ja)

Also Published As

Publication number Publication date
JPH0399446A (ja) 1991-04-24

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