JP2621881B2 - Bump forming method - Google Patents

Bump forming method

Info

Publication number
JP2621881B2
JP2621881B2 JP62249211A JP24921187A JP2621881B2 JP 2621881 B2 JP2621881 B2 JP 2621881B2 JP 62249211 A JP62249211 A JP 62249211A JP 24921187 A JP24921187 A JP 24921187A JP 2621881 B2 JP2621881 B2 JP 2621881B2
Authority
JP
Japan
Prior art keywords
ball
wire
capillary
bump
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62249211A
Other languages
Japanese (ja)
Other versions
JPH0191440A (en
Inventor
敬三 櫻井
淳一 及川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62249211A priority Critical patent/JP2621881B2/en
Publication of JPH0191440A publication Critical patent/JPH0191440A/en
Application granted granted Critical
Publication of JP2621881B2 publication Critical patent/JP2621881B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はICチップ、回路基板又はパッケージ等の電極
部に突起した形状のバンプを形成するバンプ形成方法に
関する。
Description: TECHNICAL FIELD The present invention relates to a bump forming method for forming a bump having a projecting shape on an electrode portion of an IC chip, a circuit board, a package, or the like.

〔従来の技術〕[Conventional technology]

ICチップ、回路基板及びパッケージ等の電極部を突出
させ、インナーリードボンディング,フリップチップボ
ンエィング及びハンダリフロー方式などの接合技術を用
い、表面実装の実装密度の向上、薄型実装技術の確立が
要求されるようになってきた。従来、バンプの形成方法
としては蒸着及びメッキ技術を用いてバンプが所定の高
さになるまで数回同一工程を繰り返し製造されていた。
It is necessary to protrude the electrode parts of IC chips, circuit boards, packages, etc., and use surface bonding techniques such as inner lead bonding, flip chip bonding, and solder reflow to improve the mounting density of surface mounting and establish a thin mounting technique. It has come to be. Conventionally, as a method of forming a bump, the same process is repeated several times using a vapor deposition and plating technique until the bump has a predetermined height.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかし、上述した従来の蒸着やメッキ技術を用いたバ
ンプの形成方法では製造工程を数回繰り返すために工程
時間が長くなり、かつ高価なものであった。しかもICチ
ップのバンプ製造においてはウェハ状態にて処理される
ので、良品,不良品の区別なくウェハ全体のICチップに
バンプが形成され、歩留りの低い製品の場合、特に大き
さが大きいICチップの場合など良品ICチップ1個当たり
のバンプ製造費用は非常に高いものであった。
However, in the above-described bump forming method using the vapor deposition or plating technique, the manufacturing process is repeated several times, so that the process time is long and expensive. In addition, since IC chip bumps are processed in the wafer state, bumps are formed on the entire IC chip without discrimination between good and defective products. In some cases, the bump manufacturing cost per good IC chip was very high.

本発明の目的は前記問題点を解消したバンプ形成方法
を提供することにある。
An object of the present invention is to provide a bump forming method which solves the above problem.

〔発明の従来技術に対する相違点〕[Differences of the Invention from the Prior Art]

従来の蒸着又はメッキ技術によるバンプ形成方法に対
し、本発明はボールボンディング技術における金属ワイ
ヤ先端に形成されるボールを電極部に接続させそのボー
ルを均一な高さのバンプに修正する手法を用いて容易に
バンプ形成を行うという相違点を有する。
In contrast to the conventional method of forming a bump by vapor deposition or plating technology, the present invention uses a method in which a ball formed at the tip of a metal wire in a ball bonding technology is connected to an electrode portion and the ball is corrected to a bump of uniform height. The difference is that bump formation is easy.

〔問題点を解決するための手段〕[Means for solving the problem]

前記目的を達成するため、本発明に係るバンプ形成方
法は、キャピラリに挿通されたワイヤの先端にボールを
形成する工程と、前記キャピラリを下降させて前記ボー
ルを被接合部に押圧接合する工程と、被接合部に接合し
て前記キャピラリが上昇したならば前記ワイヤを前記ボ
ールから切り離す工程と、ワイヤが切り離された上記ボ
ールを整形する工程とを行うバンプ形成方法であって、 前記切り離し工程は、キャピラリを定められた高さに
保持し、ワイヤとキャピラリを定められた大きさで旋回
させるように移動させ、ワイヤをねじ切る処理を行うも
のである。
In order to achieve the above object, the bump forming method according to the present invention includes a step of forming a ball at the tip of a wire inserted into a capillary, and a step of pressing the ball down to a portion to be bonded by lowering the capillary. A step of separating the wire from the ball if the capillary rises after being joined to the portion to be joined, and a step of shaping the ball from which the wire has been cut, the bump forming method comprising: , The capillary is held at a predetermined height, the wire and the capillary are moved so as to rotate in a predetermined size, and the wire is threaded.

〔実施例〕〔Example〕

以下、本発明の実施例を図により説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(実施例1) 第1図において、1aはICチップ、回路基板又はパッケ
ージ等の対象物7を上下に積層して収納供給する供給
部,1bはバンプ形成後の対象物7を上下に積層して収納
する収納部である。
(Embodiment 1) In FIG. 1, reference numeral 1a denotes a supply unit for vertically stacking and supplying an object 7 such as an IC chip, a circuit board or a package, and 1b a vertically stacked object 7 after bump formation. It is a storage section for storing.

前記供給部1aと収納部1bとの間に、供給部1aから繰り
出した対象物7を爪8aで掛止しこれを搬送路8bに沿って
収納部1bに搬送する搬送機構8を設置し、前記搬送路8b
に沿って、ワイヤの先端にボール部を形成し該ボール部
を対象物7の電極部に接合するボンディング機構M1と、
電極部に接合した前記ボール部よりワイヤを切り取るワ
イヤ切断機構M2と、電極部に接合したボール部を加圧整
形してバンプを形成する加圧整形機構M3とを設置する。
A transport mechanism 8 is provided between the supply unit 1a and the storage unit 1b, the object 7 fed from the supply unit 1a is hung by a claw 8a, and is transported to the storage unit 1b along the transport path 8b. The transfer path 8b
Along a bonding mechanism M 1 to be joined to the electrode portion of the object 7 to the ball portion to form a ball portion at the tip of the wire,
A wire cutting mechanism M 2 to cut the wire from said ball portion bonded to the electrode portion, the ball portion bonded to the electrode portion by shaping pressure installing a pressure voltage rectifier-type mechanism M 3 to form a bump.

前記ボンディング機構M1は、対象物7の電極部の位置
を検出する認識カメラ3と、ワイヤ供給機4と、電気ト
ーチ2と、ボンディングヘッド5とを含む。ボンディン
グヘッド5はクランプ11,キャピラリ12,超音波ホーン14
とを含む(第2図参照)。前記ワイヤ切断機構M2はxyテ
ーブル6からなり、ボンディングヘッド5をxy2軸方向
に移動させてボール部とワイヤとの間にクラック等を生
じさせる機能を有している。本実施例ではxyテーブル6
はボンディング機構M1を保持しこれをxy2軸方向に移動
させてボンディング位置を位置決めする機能を併せても
っている。
The bonding mechanism M 1 includes a recognition camera 3 for detecting the position of the electrode portion of the object 7, a wire feeder 4, and an electric torch 2, the bonding head 5. The bonding head 5 includes a clamp 11, a capillary 12, and an ultrasonic horn 14.
(See FIG. 2). The wire cutting mechanism M 2 consists xy table 6 has a function of causing a crack or the like between the ball portion to move the bonding head 5 in xy2 axially and wires. In this embodiment, the xy table 6
Has also to function by moving it holds bonding mechanism M 1 to xy2 axially positioning the bonding position.

前記加圧整形機構M3はボール部を加圧するボール整形
板9と、ボール整形板9をZ軸すなわち上下方向に駆動
するZ軸駆動部10とを含む。
Said pressure voltage rectifier-type mechanism M 3 are include ball fairing 9 to pressurize the ball portion, and a Z-axis driving unit 10 for driving the ball fairing 9 to the Z axis or vertical direction.

実施例において、まず認識カメラ3により固定された
対象物7の位置を検出しさらに図示されない制御部によ
り演算された結果によりボンディングヘッド5をxyテー
ブル6により移動させ、電気トーチ2によりワイヤ先端
にボール15を形成させ、第2図のようにボール15を図示
しない加熱機構により前以て加熱されているバンプを形
成しようとしている対象物7の電極部に接続し、その
後、キャピラリ12をボール上の前以て入力されているあ
る高さに上昇させてワイヤ13とキャピラリ12を前以て入
力してある量だけ往復運動させ、ボール15とワイヤ13と
の継目にクラックもしくは金属疲労を発生させる。そし
てワイヤ13とキャピラリ12がボール15上に位置するよう
にボンディングヘッド5を移動させ、クランパ11にてワ
イヤをキャピラリ12とは反対方向に保持しながら移動さ
せ、ボール15よりワイヤ13を切断する。さらにボール接
続の終った対象物を搬送機構8によりボール整形を行う
位置まで移動させる。第4図のようにボール15の切断部
分16が尖った形状をしているので、Z軸駆動部10により
第5図のようにボール整形板9によりボール15を押圧す
ると、第6図のような平坦な面をもつボールバンプ17を
形成することができる。このようにしてバンプを形成し
た対象物7を搬送機構8により収納部1bに収納する。
In the embodiment, first, the position of the object 7 fixed by the recognition camera 3 is detected, and the bonding head 5 is moved by the xy table 6 based on the result calculated by the control unit (not shown). Then, as shown in FIG. 2, the ball 15 is connected to the electrode portion of the object 7 to form a bump which is to be heated in advance by a heating mechanism (not shown) as shown in FIG. The wire 13 and the capillary 12 are reciprocated by a predetermined amount by raising the wire 13 to a previously input height, thereby causing cracks or metal fatigue at the joint between the ball 15 and the wire 13. Then, the bonding head 5 is moved so that the wire 13 and the capillary 12 are positioned on the ball 15, the wire is moved by the clamper 11 while holding the wire in the opposite direction to the capillary 12, and the wire 13 is cut from the ball 15. Further, the object after the ball connection is moved by the transport mechanism 8 to a position where ball shaping is performed. Since the cut portion 16 of the ball 15 has a pointed shape as shown in FIG. 4, when the ball 15 is pressed by the ball shaping plate 9 as shown in FIG. The ball bump 17 having a flat surface can be formed. The object 7 on which the bumps are formed in this manner is stored in the storage section 1b by the transport mechanism 8.

(実施例2) 第3図は本発明の実施例2を示す図である。本実施例
ではボール15をバンプを形成しようとしている対象物7
の電極に接続し、キャピラリ12をボール15上の前以て入
力されているある高さに位置させ、ワイヤ13とキャピラ
リ12を前以て入力してあるxyの移動量分だけ旋回させる
ように移動させ、ボール15とワイヤ13との継目にクラッ
クもしくは金属疲労を発生させる。そしてワイヤ13とキ
ャピラリ12がボール15上に位置するようにボンディング
ヘッド5を移動させ、クランパ11によりワイヤ13とボー
ル15とを切断させる。この実施例ではボール15とワイヤ
13との継目にクラック及び金属疲労が一様に発生するた
め、ボール15とワイヤ13とを切断させた場合、切断部が
あまり尖った状態にならない利点がある。
(Embodiment 2) FIG. 3 is a view showing Embodiment 2 of the present invention. In this embodiment, the ball 15 is placed on the object 7 for which bumps are to be formed.
So that the capillary 12 is positioned at a predetermined height on the ball 15 and the wire 13 and the capillary 12 are turned by the movement distance of the previously input xy. It is moved to cause cracks or metal fatigue at the joint between the ball 15 and the wire 13. Then, the bonding head 5 is moved so that the wire 13 and the capillary 12 are positioned on the ball 15, and the wire 13 and the ball 15 are cut by the clamper 11. In this embodiment, the ball 15 and the wire
Since cracks and metal fatigue occur uniformly at the joint with the wire 13, when the ball 15 and the wire 13 are cut, there is an advantage that the cut portion does not become very sharp.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明はボンディングによりボー
ルを電極部に接合し、そのボールを加圧整形して平坦な
面をもつバンプを整形するため、容易にバンプを形成す
ることができ、従来のメッキ方法に比べ製造期間の短縮
化、コスト低減化を実施できる効果がある。
As described above, according to the present invention, a ball is bonded to an electrode portion by bonding, and the ball is pressed and shaped to form a bump having a flat surface. There is an effect that the manufacturing period and cost can be reduced as compared with the method.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の実施例を示す構成図、第2図,第3図
はボール部とワイヤ部を切断する際のキャピラリ及びワ
イヤの動作状態を示す図、第4図,第5図,第6図はボ
ンディングされたボールよりバンプを形成する過程を示
す図である。 1a……供給部、1b……収納部 2……電気トーチ、3……認識カメラ 4……ワイヤ供給機、5……ボンディングヘッド 6……xyテーブル、7……対象物 8……搬送機構、9……ボール整形板 10……Z軸駆動部、11……クランプ 12……キャピラリ、13……ワイヤ 14……超音波ホーン、15……ボール M1……ボンデイング機構、M2……ワイヤ切断機構 M3……加圧整形機構
FIG. 1 is a block diagram showing an embodiment of the present invention, FIGS. 2 and 3 are diagrams showing operating states of a capillary and a wire when cutting a ball portion and a wire portion, and FIGS. FIG. 6 is a diagram showing a process of forming a bump from a bonded ball. 1a: Supply unit, 1b: Storage unit 2: Electric torch, 3: Recognition camera 4: Wire feeder, 5: Bonding head 6: xy table, 7: Target object 8: Transport mechanism , 9… Ball shaping plate 10… Z-axis drive unit, 11… Clamp 12… Capillary, 13… Wire 14… Ultrasonic horn, 15… Ball M 1 …… Bonding mechanism, M 2 … Wire cutting mechanism M 3 …… Pressure shaping mechanism

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−154648(JP,A) 特開 昭62−211937(JP,A) 特開 昭64−12555(JP,A) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-154648 (JP, A) JP-A-62-111937 (JP, A) JP-A-64-12555 (JP, A)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】キャピラリに挿通されたワイヤの先端にボ
ールを形成する工程と、前記キャピラリを下降させて前
記ボールを被接合部に押圧接合する工程と、被接合部に
接合して前記キャピラリが上昇したならば前記ワイヤを
前記ボールから切り離す工程と、ワイヤが切り離された
上記ボールを整形する工程とを行うバンプ形成方法であ
って、 前記切り離し工程は、キャピラリで定められた高さに保
持し、ワイヤとキャピラリを定められた大きさで旋回さ
せるように移動させ、ワイヤをねじ切る処理を行うこと
を特徴とするバンプ形成方法。
A step of forming a ball at the tip of a wire inserted through a capillary; a step of lowering the capillary to press-join the ball to a portion to be joined; It is a bump forming method for performing a step of separating the wire from the ball if it has risen, and a step of shaping the ball from which the wire has been separated, wherein the separating step holds the wire at a height determined by a capillary. A method of forming a bump, comprising: moving a wire and a capillary so as to be swiveled in a predetermined size, and performing a thread cutting process.
JP62249211A 1987-10-02 1987-10-02 Bump forming method Expired - Fee Related JP2621881B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62249211A JP2621881B2 (en) 1987-10-02 1987-10-02 Bump forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62249211A JP2621881B2 (en) 1987-10-02 1987-10-02 Bump forming method

Publications (2)

Publication Number Publication Date
JPH0191440A JPH0191440A (en) 1989-04-11
JP2621881B2 true JP2621881B2 (en) 1997-06-18

Family

ID=17189565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62249211A Expired - Fee Related JP2621881B2 (en) 1987-10-02 1987-10-02 Bump forming method

Country Status (1)

Country Link
JP (1) JP2621881B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008193637A (en) * 2007-02-08 2008-08-21 Epson Toyocom Corp Layered electronic device and manufacturing method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695519B2 (en) * 1985-12-26 1994-11-24 株式会社東芝 Bump forming method
JPS63117449A (en) * 1986-11-06 1988-05-21 Toshiba Corp Formation of gold ball bump
JPS63188948A (en) * 1987-01-30 1988-08-04 Mitsubishi Electric Corp Formation of bump for bonding

Also Published As

Publication number Publication date
JPH0191440A (en) 1989-04-11

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